CN105665013B - A kind of three-dimensional bionic composite and application based on elimination reflection and double-deck P/N hetero-junctions - Google Patents
A kind of three-dimensional bionic composite and application based on elimination reflection and double-deck P/N hetero-junctions Download PDFInfo
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- CN105665013B CN105665013B CN201511002798.4A CN201511002798A CN105665013B CN 105665013 B CN105665013 B CN 105665013B CN 201511002798 A CN201511002798 A CN 201511002798A CN 105665013 B CN105665013 B CN 105665013B
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- 239000002131 composite material Substances 0.000 title claims abstract description 47
- 239000011664 nicotinic acid Substances 0.000 title claims abstract description 22
- 230000008030 elimination Effects 0.000 title claims description 4
- 238000003379 elimination reaction Methods 0.000 title claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 119
- 229920000767 polyaniline Polymers 0.000 claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 55
- 239000010703 silicon Substances 0.000 claims abstract description 55
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 239000002105 nanoparticle Substances 0.000 claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 9
- 239000003513 alkali Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000002073 nanorod Substances 0.000 claims abstract description 7
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000001354 calcination Methods 0.000 claims abstract description 3
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract 2
- 239000000243 solution Substances 0.000 claims description 22
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 22
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 20
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 11
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 claims description 10
- 229960000907 methylthioninium chloride Drugs 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 235000011121 sodium hydroxide Nutrition 0.000 claims description 9
- 238000003756 stirring Methods 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 230000015556 catabolic process Effects 0.000 claims description 7
- 238000006731 degradation reaction Methods 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 7
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910017906 NH3H2O Inorganic materials 0.000 claims description 5
- 125000001967 indiganyl group Chemical group [H][In]([H])[*] 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 229920006316 polyvinylpyrrolidine Polymers 0.000 claims description 5
- 230000002194 synthesizing effect Effects 0.000 claims description 5
- 238000013019 agitation Methods 0.000 claims description 4
- MMCPOSDMTGQNKG-UHFFFAOYSA-N anilinium chloride Chemical compound Cl.NC1=CC=CC=C1 MMCPOSDMTGQNKG-UHFFFAOYSA-N 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 239000003643 water by type Substances 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 238000005286 illumination Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- 238000003491 array Methods 0.000 claims description 2
- 230000003197 catalytic effect Effects 0.000 claims description 2
- 239000002322 conducting polymer Substances 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 238000003795 desorption Methods 0.000 claims description 2
- 235000001968 nicotinic acid Nutrition 0.000 claims description 2
- 229910001868 water Inorganic materials 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims 1
- 239000000908 ammonium hydroxide Substances 0.000 claims 1
- 239000002585 base Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 150000002576 ketones Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 claims 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 230000001699 photocatalysis Effects 0.000 abstract description 6
- 238000007146 photocatalysis Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 9
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 238000001579 optical reflectometry Methods 0.000 description 4
- 235000013339 cereals Nutrition 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- -1 hydroxyl radical free radical Chemical class 0.000 description 3
- 125000000325 methylidene group Chemical group [H]C([H])=* 0.000 description 3
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 3
- KXDAEFPNCMNJSK-UHFFFAOYSA-N Benzamide Chemical compound NC(=O)C1=CC=CC=C1 KXDAEFPNCMNJSK-UHFFFAOYSA-N 0.000 description 2
- 230000001476 alcoholic effect Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000011165 3D composite Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/02—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
- B01J31/06—Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing polymers
- B01J31/069—Hybrid organic-inorganic polymers, e.g. silica derivatized with organic groups
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J31/00—Catalysts comprising hydrides, coordination complexes or organic compounds
- B01J31/26—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24
- B01J31/38—Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24 of titanium, zirconium or hafnium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
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- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
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- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
- B01J37/10—Heat treatment in the presence of water, e.g. steam
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- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/12—Oxidising
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
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- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/30—Treatment of water, waste water, or sewage by irradiation
- C02F1/32—Treatment of water, waste water, or sewage by irradiation with ultraviolet light
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Abstract
The present invention relates to a kind of based on the three-dimensional bionic composite for eliminating reflection and double-deck P/N hetero-junctions, prepared according to following methods:(1) anisotropic etching is carried out to silicon chip, compact arranged tetragonal pyramid pattern is formed on its surface with certain density alkali lye first;(2) silicon chip after and then step (1) is etched carries out hydrophilic treated, in its superficial growth and titanium dioxide crystal seed, is placed in calcining in Muffle furnace;(3) silicon chip that surface resulting in step (2) has titanium dioxide crystal seed is placed in reactor again, titanium dioxide nano-rod is grown in the side wall that silicon is bored using the method for Hydrothermal Synthesiss;(4) Nano particles of polyaniline is deposited on the titanium dioxide nano-rod finally obtained in step (3).Three-dimensional bionic composite involved in the present invention has the excellent ability for disappearing reflection and efficiently separating photogenerated charge concurrently, may apply to the fields such as photocatalysis, photoelectric conversion device and solar cell.
Description
Technical field
It is silicon-dioxy the present invention relates to a kind of three-dimensional bionic composite based on elimination reflection and double-deck P/N hetero-junctions
Change titanium-polyaniline composite material, while such compound can be used for photoelectric conversion and catalysis material, belong to photoelectric material skill
Art field.
Background technology
Light is seen everywhere in our life, and maximum of which lamp is the sun.Energy in sunshine is
Huge, efficient photoelectric conversion material is found, has become the focus of people's research.Its electricity conversion is mainly entered
Penetrate the influence of the factors such as absorbing amount, the band gap of material, light induced electron and the separative efficiency in hole.Because single photoelectric material leads to
Often influenceed by band gap width and photogenerated charge separative efficiency, limit the application of single photoelectric material.Therefore, Ren Mentong
Cross a variety of photoelectric material compounds solve the problems, such as it is above-mentioned.Wherein, titanium dioxide and the compound of polyaniline are ground as the field
The focus studied carefully.
Titanium dioxide nano material is due to catalytic activity is high, stability is good, high hydroxyl radical free radical yield, illumination are stale-proof
The advantages that erosion, especially prominent application prospect is shown in anticorrosive paint, sewage purification, antibiotic and sterilizing etc..Polyaniline has
There is good environmental stability, there is very strong absorption in visible region, be strong electron donor and excellent hole transport material
Material.When both effectively carry out compound, hetero-junctions will be formed at contact interface, the separation effect of photogenerated charge can not only be improved
Rate, and can be by the spectral response range of composite, so as to improve the utilization rate of sunshine.Patent CN102432876A and
CN102866181A discloses a kind of method for preparing polyaniline/titanium dioxide nano-complex;Patent CN104084241A is public
A kind of titanium dioxide of 3D flower type structures/polyaniline photochemical catalyst and preparation method are opened;Patent CN102389836A is disclosed
A kind of polyaniline/titanium dioxide/clay nanometer composite photocatalyst and preparation method thereof;Solves titanium dioxide to a certain degree above
Titanium energy gap is big, spectral response range is small, photo-generate electron-hole to easily it is compound the problems such as.However, polyaniline/titanium dioxide
Compound remain order it is poor, it is easy reunite, photogenerated charge easily it is compound, recovery utilization rate is relatively low the problems such as, while
Absorptivity of the composite material surface to incident light is not accounted for, limits the popularization and application of polyaniline/titanium dioxide compound.
The content of the invention
The invention aims to overcome traditional titanium dioxide/polyaniline nano compound it is unordered, it is easy reunite, difficult recovery
The shortcoming such as low with electricity conversion, there is provided a kind of based on the three-dimensional bionic composite wood for eliminating reflection and double-deck P/N hetero-junctions
Material, have good disappear concurrently and reflecting properties and efficiently separate photogenerated charge ability, improve the electricity conversion of material, show
Excellent photo-catalysis capability, while the composite is advantageous to the recycling of material using monocrystalline silicon as carrier.
According to technical scheme provided by the invention, a kind of three-dimensional based on elimination reflection and double-deck P/N hetero-junctions is imitated
Raw composite, is silicon/titanium dioxide/polyaniline (Si/TiO2/PANI).Si is 100 types that surface has taper microstructure
Monocrystalline silicon, it is P-type semiconductor, silicon wimble structure is shaped as tetragonal pyramid, is highly 4~10 μm, close-packed arrays;TiO2It is Rutile Type
TiO2Nanometer rods, it is N-type semiconductor, quadrangular shape, is highly 500~4000nm, a diameter of 40~250nm, hangs down in order
It is straight to be grown in the side wall of silicon cone;PANI is Nano particles of polyaniline, is P-type semiconductor, and particle diameter is 10~60nm, homoepitaxial
In TiO2Nanorod surfaces;Si/TiO2Si and TiO in/PANI three-dimensional composite materials2Interface, TiO2Formed with PANI interfaces double
P/N hetero-junctions, photogenerated charge can be efficiently separated, while there is the bionical composite construction of three-dimensional, can effectively reduce incident light
Reflectivity on surface.
A kind of prepared preparation method based on the three-dimensional bionic composite for eliminating reflection and double-deck P/N hetero-junctions,
It is characterized in that comprise the following steps:
(1) under conditions of stirring, anisotropic etching is carried out to silicon chip, in silicon chip with certain density alkali lye first
Surface forms compact arranged tetragonal pyramid pattern;
(2) silicon chip after and then step (1) is etched carries out hydrophilic treated, in its superficial growth TiO2Crystal seed, it is placed in
Natural cooling after calcining a period of time in Muffle furnace;
(3) surface resulting in step (2) had into TiO again2The silicon chip of crystal seed is placed in reactor, is closed using hydro-thermal
Into method grow TiO in the side wall that silicon is bored2Nanometer rods;
(4) TiO finally obtained in step (3)2Conductive PANI nano-particles are deposited in nanometer rods, obtain Si/TiO2/
PANI three-dimensional bionic composites.
Further, the alkali lye described in step (1) is potassium hydroxide, TMAH, sodium hydroxide, ammoniacal liquor, EDP
(mixed solution of ethylenediamine, catechol and water), pH=12~14 of alkali lye, 50~90 DEG C of etching temperature, etch period 5~
60min, the mode of stirring is mechanical agitation or magnetic agitation.
Further, the hydrophilic treated operation described in step (2) is that the silicon chip that step (1) obtains is placed in into NH3H2O、H2O2
And H2In O mixed solution, volume ratio 1:1:5, temperature is 90 DEG C, heat time 30min.
Further, the growth TiO described in step (2)2Crystal seed condition is that the silicon chip after hydrophilic treated is dipped in into concentration to be
Lifted in the aqueous isopropanol of 0.05~1mol/L butyl titanate or spin coating, the speed of lifting is 1~10mm/s, weight
Lift 5~30 times again, the speed of spin coating is 500~7000 turns/min, finally by above-mentioned sample in 450~500 DEG C of Muffle furnaces
Calcine about 30~60min.
Further, at a temperature of the hydrothermal synthesizing condition described in step (3) is 80~200 DEG C, equipped with 10~20mL
Deionized water, 6~17mL mass fractions be 37% concentrated hydrochloric acid and 0.5~5mL butyl titanates reactor in processing 2~
19h, then take out sample and dried up with nitrogen.
Further, described in step (4) in TiO2PANI nano-particles are deposited in nanometer rods, refer to utilize in-situ oxidation
Method is in TiO2Nanometer rods over-assemble PANI conducting polymer particles, reaction condition are:Prepare 100mL 0.2~0.5mol/L benzene
Amide hydrochloride, and 3~7g ammonium persulfates and 4g polyvinylpyrrolidone k-30 are added, it is well mixed;It is 1.5cm by area
× 1.0cm superficial growth has TiO2The silicon chip of nanometer rods is placed in reaction solution, is kept stirring 1~8h at room temperature, is obtained Si/
TiO2/ PANI three-dimensional bionic composites.
Further, Si/TiO2/ PANI three-dimensional bionics composite is used as the application of photocatalysis degradation organic contaminant,
By the D S i/TiO of 1.5cm × 1.0cm areas2/ PANI composites are positioned over 5mL methylene blue solution, concentration 1.0
×10-5Mol/L, then it is placed on dark place 1h and allows it to reach absorption-desorption balance, illumination is carried out to solution with light source afterwards,
Methylene blue is degraded.Meanwhile this kind of bionic composite material is not limited to apply in photocatalysis degradation organic contaminant,
It is also suitable for other photocatalysis fields, and photoelectric conversion device, area of solar cell.
The present invention has following superiority:
(1) in silicon poppet surface level ordered fabrication TiO2Nanometer rods and PANI nano-particles, form the bionical compound of three-dimensional
Structure, there are the excellent reflecting properties that disappear.
(2) silicon cone side wall and TiO2Nanometer rods contact and TiO2Nanometer rods contact with PANI nano-particles, can form bilayer and receive
Rice P/N heterojunction structures, efficiently separate photo-generated carrier, reduce the compound of electron-hole pair, have excellent photoelectric conversion
Efficiency.
(3) three-dimensional Si/TiO2/ PANI composites have high specific surface area, add surface and are effectively catalyzed work
Property point, has certain use value in terms of photocatalytic pollutant degradation.
(4) this kind of three-dimensional Si/TiO2/ PANI composite material and preparation method thereofs are easy, and mild condition is easily-controllable, to consersion unit
It is required that it is low, while reused during use beneficial to recovery, meet the requirement of large-scale production.
Brief description of the drawings
Fig. 1 is the monocrystalline silicon scanning electron microscopic picture Jing Guo alkali lye anisotropic etching in embodiment 1;
Fig. 2 is to assemble TiO in silicon poppet surface in embodiment 12Nanometer rods scanning electron microscopic picture.
Fig. 3 is to assemble obtained Si/TiO in silicon poppet surface level in embodiment 12/ PANI three-dimensional bionic composites are swept
Retouch electron microscopic picture.
Embodiment
Embodiment 1:
Step 1:The preparation of silicon cone
PH=13 KOH solution 100mL is configured, 25mL isopropanols is added thereto, silicon chip is placed in solution, at 70 DEG C
30min is etched, is continuously stirred during etching with churned mechanically mode.After having etched, silicon chip distilled water flushing, so
Dried up afterwards with nitrogen.
Step 2:Silicon cone sidewall growth TiO2Crystal seed
The silicon chip in silicon wimble structure obtained in step 1 is placed in NH3H2O、H2O2And H2In O mixed solution, volume ratio
For 1:1:5, temperature is 80 DEG C, heat time 30min.Then, it is dipped in the isopropyl for the butyl titanate that concentration is 0.075mol/L
Lifted in alcoholic solution, the speed of lifting is 2mm/s, lifting 20 times is repeated, finally by above-mentioned sample in 450 DEG C of Muffle furnaces
Calcine about 30min.
Step 3:TiO2Crystal seed induces TiO2The preparation of nanometer rods
The surface obtained in step 2 had into TiO2The silicon chip of crystal seed, which is placed under hydrothermal condition, carries out growth TiO2Nanometer
Rod.At a temperature of hydrothermal synthesizing condition is 130 DEG C, equipped with 10mL deionized waters, the concentrated hydrochloric acid that 10mL mass fractions are 37%
8h is handled with the reactor of 0.5mL butyl titanates, sample is then taken out and is dried up with nitrogen.
Step 4:TiO2Nanorod surfaces are in situ to prepare PANI nano-particles
Utilize oxidation in situ TiO resulting in step 22PANI nano-particles are deposited in nanometer rods.Reaction condition
For:100mL 0.3mol/L anilinechloride solution is prepared, and adds 5g ammonium persulfates and 4g polyvinylpyrrolidone k-30,
It is well mixed;The superficial growth that area is 1.5cm × 1.0cm there is into TiO2The silicon chip of nanometer rods is placed in reaction solution, keeps room
The lower stirring 3h of temperature, obtains Si/TiO2/ PANI three-dimensional bionic composites.
D S i/TiO obtained above2In/PANI composites, the average grain diameter of PANI nano-particles is 44nm, TiO2
The average diameter of nanometer rods is 83nm, average height 818nm, 4.1 μm of the average height of silicon cone.Tested by uv drses
Understand, Si/TiO2/ PANI level composite material exhibits go out the outstanding reflecting properties that disappear, light reflectivity 4%;Pass through photoelectric current
Test, Si/TiO2The photoelectric current of/PANI level composites is about respectively pure TiO2Nanometer rods and 20 times of pure PANI and 14 times;
Pass through simulated solar luminous environment, Si/TiO2/ PANI level composite photocatalytic degradation methylene blues, with reference to ultraviolet spectrometry light
Degree meter is investigated methylene blue concentration and changed with time, in 5h that dyestuff methylene blue is degradable, and degradation efficiency is higher than
Pure TiO2Nanometer rods and pure PANI.
Embodiment 2:
Step 1:The preparation of silicon cone
PH=13 KOH solution 100mL is configured, 25mL isopropanols is added thereto, silicon chip is placed in solution, at 70 DEG C
30min is etched, is continuously stirred during etching with churned mechanically mode.After having etched, silicon chip distilled water flushing, so
Dried up afterwards with nitrogen.
Step 2:Silicon cone sidewall growth TiO2Crystal seed
The silicon chip in silicon wimble structure obtained in step 1 is placed in NH3H2O、H2O2And H2In O mixed solution, volume ratio
For 1:1:5, temperature is 80 DEG C, heat time 30min.Then, it is dipped in the isopropyl for the butyl titanate that concentration is 0.075mol/L
Lifted in alcoholic solution, the speed of lifting is 2mm/s, lifting 20 times is repeated, finally by above-mentioned sample in 450 DEG C of Muffle furnaces
Calcine about 30min.
Step 3:TiO2Crystal seed induces TiO2The preparation of nanometer rods
The surface obtained in step 2 had into TiO2The silicon chip of crystal seed, which is placed under hydrothermal condition, carries out growth TiO2Nanometer
Rod.At a temperature of hydrothermal synthesizing condition is 130 DEG C, equipped with 10mL deionized waters, the concentrated hydrochloric acid that 10mL mass fractions are 37%
8h is handled with the reactor of 0.5mL butyl titanates, sample is then taken out and is dried up with nitrogen.
Step 4:TiO2Nanorod surfaces are in situ to prepare PANI nano-particles
Utilize oxidation in situ TiO resulting in step 22PANI nano-particles are deposited in nanometer rods.Reaction condition
For:100mL 0.3mol/L anilinechloride solution is prepared, and adds 7g ammonium persulfates and 4g polyvinylpyrrolidone k-30,
It is well mixed;The superficial growth that area is 1.5cm × 1.0cm there is into TiO2The silicon chip of nanometer rods is placed in reaction solution, keeps room
The lower stirring 4h of temperature, obtains Si/TiO2/ PANI three-dimensional bionic composites.
D S i/TiO obtained above2In/PANI composites, the average grain diameter of PANI nano-particles is 44nm, TiO2
The average diameter of nanometer rods is 83nm, average height 818nm, 4.1 μm of the average height of silicon cone.Tested by uv drses
Understand, Si/TiO2/ PANI level composite material exhibits go out the outstanding reflecting properties that disappear, light reflectivity 6%;Pass through photoelectric current
Test, Si/TiO2The photoelectric current of/PANI level composites is about respectively pure TiO2Nanometer rods and 18 times of pure PANI and 11 times;
Pass through simulated solar luminous environment, Si/TiO2/ PANI level composite photocatalytic degradation methylene blues, with reference to ultraviolet spectrometry light
Degree meter is investigated methylene blue concentration and changed with time, in 5.5h that dyestuff methylene blue is degradable, and degradation efficiency is high
In pure TiO2Nanometer rods and pure PANI.
Embodiment 3:
Step 1:The preparation of silicon cone
PH=14 KOH solution 100mL is configured, 25mL isopropanols is added thereto, silicon chip is placed in solution, at 50 DEG C
15min is etched, is continuously stirred during etching with churned mechanically mode.After having etched, silicon chip distilled water flushing, so
Dried up afterwards with nitrogen.
Step 2:Silicon cone sidewall growth TiO2Crystal seed
The silicon chip in silicon wimble structure obtained in step 1 is placed in NH3H2O、H2O2And H2In O mixed solution, volume ratio
For 1:1:5, temperature is 90 DEG C, heat time 30min.Then, it is dipped in the isopropanol for the butyl titanate that concentration is 0.1mol/L
Lifted in solution, the speed of lifting is 2mm/s, repeats lifting 10 times, finally forges above-mentioned sample in 500 DEG C of Muffle furnaces
Burn about 30min.
Step 3:TiO2Crystal seed induces TiO2The preparation of nanometer rods
The surface obtained in step 2 had into TiO2The silicon chip of crystal seed, which is placed under hydrothermal condition, carries out growth TiO2Nanometer
Rod.At a temperature of hydrothermal synthesizing condition is 120 DEG C, equipped with 10mL deionized waters, the concentrated hydrochloric acid that 10mL mass fractions are 37%
8h is handled with the reactor of 0.5mL butyl titanates, sample is then taken out and is dried up with nitrogen.
Step 4:TiO2Nanorod surfaces are in situ to prepare PANI nano-particles
Utilize oxidation in situ TiO resulting in step 22PANI nano-particles are deposited in nanometer rods.Reaction condition
For:100mL 0.3mol/L anilinechloride solution is prepared, and adds 7g ammonium persulfates and 4g polyvinylpyrrolidone k-30,
It is well mixed;The superficial growth that area is 1.5cm × 1.0cm there is into TiO2The silicon chip of nanometer rods is placed in reaction solution, keeps room
The lower stirring 5h of temperature, obtains Si/TiO2/ PANI three-dimensional bionic composites.
D S i/TiO obtained above2In/PANI composites, the average grain diameter of PANI nano-particles is 52nm, TiO2
The average diameter of nanometer rods is 83nm, average height 818nm, 3.3 μm of the average height of silicon cone.Tested by uv drses
Understand, Si/TiO2/ PANI level composite material exhibits go out the outstanding reflecting properties that disappear, light reflectivity 9%;Pass through photoelectric current
Test, Si/TiO2The photoelectric current of/PANI level composites is about respectively pure TiO2Nanometer rods and 10 times of pure PANI and 6 times;
Pass through simulated solar luminous environment, Si/TiO2/ PANI level composite photocatalytic degradation methylene blues, with reference to ultraviolet spectrometry light
Degree meter is investigated methylene blue concentration and changed with time, in 7h that dyestuff methylene blue is degradable, and degradation efficiency is higher than
Pure TiO2Nanometer rods and pure PANI.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to is assert
The specific implementation of the present invention is confined to these explanations.For the personnel of the technical field of the invention, this is not being departed from
On the premise of inventive concept, many simple deduction or replace can be also made, should all be considered as belonging to protection scope of the present invention.
Claims (10)
- It is 1. a kind of based on the three-dimensional bionic composite for eliminating reflection and double-deck P/N hetero-junctions, it is characterised in that:With monocrystalline silicon (Si), titanium dioxide (TiO2) and the orderly level composition (Si/TiO of polyaniline (PANI)2/ PANI), Si is that surface has taper micro- 100 type monocrystalline silicon of structure, are N-type semiconductor, and silicon wimble structure is shaped as tetragonal pyramid, are highly 4~10 μm, close-packed arrays; TiO2It is the TiO of Rutile Type2Nanometer rods, it is N-type semiconductor, quadrangular shape, is highly 500~4000nm, a diameter of 40~ 250nm, orderly vertical-growth is in the side wall that silicon is bored;PANI is Nano particles of polyaniline, is P-type semiconductor, particle diameter is 10~ 60nm, homoepitaxial is in TiO2Nanorod surfaces;Si/TiO2Si and TiO in/PANI three-dimensional bionic composites2Interface, TiO2Double P/N hetero-junctions are formed with PANI interfaces, photogenerated charge can be efficiently separated, while there is the bionical composite junction of three-dimensional Structure, it can effectively reduce reflectivity of the incident light on surface.
- 2. a kind of prepare as claimed in claim 1 based on the three-dimensional bionic composite for eliminating reflection and double-deck P/N hetero-junctions Method, it is characterized in that, comprise the following steps:(1) under conditions of stirring, anisotropic etching is carried out to silicon chip, in silicon chip surface with certain density alkali lye first Form compact arranged tetragonal pyramid pattern;(2) silicon chip after and then step (1) is etched carries out hydrophilic treated, in its superficial growth TiO2Crystal seed, it is placed in Muffle furnace Natural cooling after interior calcining a period of time;(3) surface resulting in step (2) had into TiO again2The silicon chip of crystal seed is placed in reactor, using Hydrothermal Synthesiss Method grows TiO in the side wall that silicon is bored2Nanometer rods;(4) TiO finally obtained in step (3)2PANI nano-particles are deposited in nanometer rods, obtain Si/TiO2/ PANI is three-dimensional Bionic composite material.
- 3. preparation method according to claim 2, it is characterised in that:Alkali lye described in step (1) is potassium hydroxide, tetramethyl Base ammonium hydroxide, sodium hydroxide, ammoniacal liquor, EDP (mixed solution of ethylenediamine, catechol and water), pH=12~14 of alkali lye, 50~90 DEG C, 5~60min of etch period of etching temperature, the mode of stirring is mechanical agitation or magnetic agitation.
- 4. preparation method according to claim 2, it is characterised in that:Hydrophilic treated operation described in step (2) is will step Suddenly the silicon chip that (1) obtains is placed in NH3H2O、H2O2And H2In O mixed solution, volume ratio 1:1:5, temperature is 90 DEG C, during heating Between 30min.
- 5. preparation method according to claim 2, it is characterised in that:Growth TiO described in step (2)2Crystal seed condition is will Silicon chip after hydrophilic treated is dipped in the aqueous isopropanol for the butyl titanate that concentration is 0.05~1mol/L and is lifted or revolved Apply, the speed of lifting is 1~10mm/s, repeats lifting 5~30 times, the speed of spin coating is 500~7000 turns/min, finally will be upper State sample and about 30~60min is calcined in 450~500 DEG C of Muffle furnaces.
- 6. preparation method according to claim 2, it is characterised in that:Hydrothermal synthesizing condition described in step (3) for 80~ At a temperature of 200 DEG C, equipped with 10~20mL deionized waters, the concentrated hydrochloric acid and 0.5~5mL that 6~17mL mass fractions are 37% 2-19h is handled in the reactor of butyl titanate, sample is then taken out and is dried up with nitrogen.
- 7. preparation method according to claim 2, it is characterised in that:Described in step (4) in TiO2Deposited in nanometer rods PANI nano-particles, refer to using oxidation in situ in TiO2Nanometer rods over-assemble PANI conducting polymer particles, reaction condition For:100mL 0.2~0.5mol/L anilinechloride solution is prepared, and adds 3~7g ammonium persulfates and 4g polyvinylpyrrolidines Ketone k-30, it is well mixed;The superficial growth that area is 1.5cm × 1.0cm there is into TiO2The silicon chip of nanometer rods is placed in reaction solution, Keep stirring 1~8h at room temperature, obtain Si/TiO2/ PANI three-dimensional bionic composites.
- 8. a kind of as claimed in claim 1 be used as light based on the three-dimensional bionic composite for eliminating reflection and double-deck P/N hetero-junctions The application of catalytic degradation organic pollution, it is characterised in that:By the Si/TiO of 1.5cm × 1.0cm areas2/ PANI three-dimensional bionics Composite is positioned over 5mL methylene blue solution, and concentration is 1.0 × 10-5Mol/L, then it is placed on dark place 1h and allows it to reach Balanced to absorption-desorption, illumination is carried out to solution with light source afterwards, methylene blue is degraded.
- 9. a kind of as claimed in claim 1 urged based on the three-dimensional bionic composite for eliminating reflection and double-deck P/N hetero-junctions in light Change field or the application in photoelectric conversion device field.
- 10. a kind of three-dimensional bionic composite based on elimination reflection and double-deck P/N hetero-junctions is in the sun as claimed in claim 1 The application of energy field of batteries.
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PCT/CN2016/081792 WO2017113564A1 (en) | 2015-12-28 | 2016-05-12 | Three-dimensional bionic composite material based on eliminating reflection and double-layer p/n heterojunction, and application thereof |
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