CN105642367B - A kind of level composite material and application using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier - Google Patents

A kind of level composite material and application using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier Download PDF

Info

Publication number
CN105642367B
CN105642367B CN201511002799.9A CN201511002799A CN105642367B CN 105642367 B CN105642367 B CN 105642367B CN 201511002799 A CN201511002799 A CN 201511002799A CN 105642367 B CN105642367 B CN 105642367B
Authority
CN
China
Prior art keywords
tio
ppy
level composite
reflection
monocrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201511002799.9A
Other languages
Chinese (zh)
Other versions
CN105642367A (en
Inventor
石刚
李赢
王大伟
倪才华
何飞
迟力峰
吕男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangnan University
Original Assignee
Jiangnan University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangnan University filed Critical Jiangnan University
Priority to CN201511002799.9A priority Critical patent/CN105642367B/en
Publication of CN105642367A publication Critical patent/CN105642367A/en
Application granted granted Critical
Publication of CN105642367B publication Critical patent/CN105642367B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00Catalysts, in general, characterised by their form or physical properties
    • B01J35/19Catalysts containing parts with different compositions
    • AHUMAN NECESSITIES
    • A62LIFE-SAVING; FIRE-FIGHTING
    • A62DCHEMICAL MEANS FOR EXTINGUISHING FIRES OR FOR COMBATING OR PROTECTING AGAINST HARMFUL CHEMICAL AGENTS; CHEMICAL MATERIALS FOR USE IN BREATHING APPARATUS
    • A62D3/00Processes for making harmful chemical substances harmless or less harmful, by effecting a chemical change in the substances
    • A62D3/10Processes for making harmful chemical substances harmless or less harmful, by effecting a chemical change in the substances by subjecting to electric or wave energy or particle or ionizing radiation
    • A62D3/17Processes for making harmful chemical substances harmless or less harmful, by effecting a chemical change in the substances by subjecting to electric or wave energy or particle or ionizing radiation to electromagnetic radiation, e.g. emitted by a laser
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J21/00Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
    • B01J21/06Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
    • B01J21/063Titanium; Oxides or hydroxides thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J31/00Catalysts comprising hydrides, coordination complexes or organic compounds
    • B01J31/02Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides
    • B01J31/06Catalysts comprising hydrides, coordination complexes or organic compounds containing organic compounds or metal hydrides containing polymers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J31/00Catalysts comprising hydrides, coordination complexes or organic compounds
    • B01J31/26Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24
    • B01J31/38Catalysts comprising hydrides, coordination complexes or organic compounds containing in addition, inorganic metal compounds not provided for in groups B01J31/02 - B01J31/24 of titanium, zirconium or hafnium
    • AHUMAN NECESSITIES
    • A62LIFE-SAVING; FIRE-FIGHTING
    • A62DCHEMICAL MEANS FOR EXTINGUISHING FIRES OR FOR COMBATING OR PROTECTING AGAINST HARMFUL CHEMICAL AGENTS; CHEMICAL MATERIALS FOR USE IN BREATHING APPARATUS
    • A62D2101/00Harmful chemical substances made harmless, or less harmful, by effecting chemical change
    • A62D2101/20Organic substances
    • A62D2101/28Organic substances containing oxygen, sulfur, selenium or tellurium, i.e. chalcogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Health & Medical Sciences (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Catalysts (AREA)

Abstract

The present invention relates to a kind of using monocrystalline silicon as the level composite material of the reflection bilayer P/N hetero-junctions that disappears of carrier, prepared according to following methods:(1) hydrophilic treated is carried out to silicon chip first, grows titanium dioxide crystal seed on its surface, be placed in calcining in Muffle furnace;(2) and then by silicon chip of the obtained surface in step (1) with titanium dioxide crystal seed it is placed in reaction kettle, using the method for hydrothermal synthesis in silicon chip surface induced growth titanium dioxide nano-rod;(3) polypyrrole nano-particle is deposited on the titanium dioxide nano-rod finally obtained in step (2), obtains the reflection bilayer P/N hetero junction layer level composite materials that disappear using monocrystalline silicon as carrier.The reflection bilayer P/N hetero junction layers level composite material that disappears according to the present invention using monocrystalline silicon as carrier has excellent reduction material surface light reflection and efficiently separates the ability of photogenerated charge, can be applied to the fields such as photocatalysis, photoelectric conversion device and solar cell.

Description

It is a kind of to reflect the level composite wood of bilayer P/N hetero-junctions by disappearing for carrier of monocrystalline silicon Material and application
Technical field
The present invention relates to it is a kind of using monocrystalline silicon as carrier disappear reflection bilayer P/N hetero-junctions level composite material i.e. silicon- Titanium dioxide-Pt/Polypyrrole composite material, while such compound can be used for photoelectric conversion and catalysis material, belong to photoelectricity material Expect technical field.
Background technology
At present, inorganic semiconductor photochemical catalyst such as TiO2、ZnO、MnO2、V2O5、Fe3O4,、Ag2O etc. is widely used to can The renewable sources of energy and environmental treatment field.Wherein titanium dioxide nano material is due to catalytic activity is high, stability is good, degradation The advantages that speed is fast, degradation condition is mild, small investment, low energy consumption, high hydroxyl radical free radical yield, illumination are not corroded applies in anti-corrosion Material, sewage purification, antibiotic and sterilizing etc. show especially prominent application prospect.But titanium dioxide is a kind of broad stopband half Conductor can only absorb in the sunlight 5% shorter ultraviolet light of wavelength, lead to photo-catalysis capability of the titanium dioxide under sunlight It is weaker.Therefore, improving photocatalytic activity of the titanium dioxide under sunlight has become the hot spot of the area research.
Conductive polymer polypyrrole has good environmental stability, has very strong absorption in visible region, is strong Electron donor and excellent hole mobile material, after surface sensitizing is carried out to titanium dioxide with polypyrrole, between the two will Hetero-junctions is formed, the separative efficiency of photogenerated charge can not only be improved so as to improve photocatalysis efficiency, and can be by composite material Spectral response range widens visible region so as to improve the utilization rate of sunlight.Patent CN101955665A discloses a kind of poly- The composite material and preparation method thereof of pyrroles's particle/titanium dioxide nanotube array;Patent CN102350317A discloses a kind of poly- pyrrole Cough up/titanium dioxide compound adsorbent and its preparation, application and regeneration method;Patent CN102600907A discloses a kind of polypyrrole Hollow form titanium dioxide nano photocatalysis agent of sensitization and preparation method thereof;It is wide to solve titanium dioxide forbidden band to a certain degree above Degree is big, spectral response range is small, photo-generate electron-hole to it is easily compound the problems such as.However, polypyrrole/titanium dioxide compound is still So there is order it is poor, it is easy reunite, recovery utilization rate it is relatively low, the problems such as absorptivity is not high, limit polypyrrole/dioxy Change the popularization and application of titanium compound.
Invention content
The invention aims to overcome traditional titanium dioxide/polypyrrole compound it is unordered, it is easy reunite, difficult recycling and light The shortcomings such as electric transformation efficiency is low provide a kind of level composite wood using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier Material, while there is good disappear reflecting properties and to efficiently separate photogenerated charge ability, improve the electricity conversion of material, table Reveal excellent photo-catalysis capability.
It is described using a kind of heterogeneous using monocrystalline silicon as the reflection bilayer P/N that disappears of carrier according to technical solution provided by the invention The level composite material of knot is with silicon (Si), titanium dioxide (TiO2) and polypyrrole (PPy) level orderly form, i.e. Si/TiO2/ PPy level composite materials, Si are P (100) type monocrystalline silicon;TiO2It is the TiO of Rutile Type2Nanometer rods, for N-type semiconductor, tetragonous Post shapes are highly 500~4000nm, and a diameter of 40~250nm, orderly vertical-growth is in monocrystalline silicon surface;PPy is polypyrrole Nano-particle is P-type semiconductor, and grain size is 10~60nm, and homoepitaxial is in TiO2Nanorod surfaces.Si/TiO2/ PPy levels are answered Si and TiO in condensation material2Interface, TiO2Double P/N hetero-junctions are formed with PPy interfaces, photogenerated charge can be efficiently separated, simultaneously With bionic insect compound eye structural, reflectivity of the incident light on surface can be effectively reduced.
A kind of preparation side of prepared level composite material using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier Method, it is characterized in that, include the following steps:
(1) hydrophilic treated is carried out to silicon chip first, grows TiO on its surface2Crystal seed is placed in one section of calcining in Muffle furnace Natural cooling after time;
(2) and then by obtained surface in step (1) has TiO2The silicon chip of crystal seed is placed in reaction kettle, using hydro-thermal Synthetic method is in silicon chip surface induced growth TiO2Nanometer rods;
(3) TiO finally obtained in step (2)2PPy nano-particles are deposited in nanometer rods, obtain Si/TiO2/ PPy layers Level composite material.
Further, the hydrophilic treated operation described in step (1) is that silicon chip is placed in NH3H2O、H2O2And H2The mixing of O is molten In liquid, volume ratio 1:1:5, temperature is 90 DEG C, heating time 30min.
Further, the growth TiO described in step (1)2Crystal seed condition is a concentration of for the silicon chip after hydrophilic treated is dipped in It is lifted in the aqueous isopropanol of the butyl titanate of 0.05~1mol/L, the speed of lifting is 1~10mm/s, repeats to lift 5~30 times, the speed of spin coating is 500~7000 turns/min, finally calcines above-mentioned sample about in 450~500 DEG C of Muffle furnaces 30~60min.
Further, at a temperature of the hydrothermal synthesizing condition described in step (2) is 80~200 DEG C, equipped with 10~20mL 2~19h is handled in the reaction kettle of deionized water, 6~17mL concentrated hydrochloric acids (mass fraction 37%) and 0.5~5mL butyl titanates, Sample is then taken out to be dried up with nitrogen.
Further, described in step (3) in TiO2PPy nano-particles are deposited in nanometer rods, refer to utilize in-situ oxidation Method is in TiO2PPy conducting polymer particles are deposited in nanometer rods, reaction condition is:By the FeCl of 0.01~0.06g3, 50~ 150uL pyrroles, 5~10mL ultra-pure waters are placed in beaker, form reaction solution.The surface that area is 1.5cm × 1.0cm is grown There is TiO2The silicon chip of nanometer rods is placed in reaction solution, is kept stirring 10~60min at room temperature, is obtained Si/TiO2/ PPy levels are compound Material.
Further, Si/TiO2/ PPy levels composite material is used as the application of photocatalysis degradation organic contaminant, will The Si/TiO of 1.5cm × 1.0cm areas2/ PPy level composite materials are positioned over the methylene blue solution of 5mL, a concentration of 1.0 × 10-5Then mol/L places it in dark place 1h and it is allowed to reach absorption-desorption balance, carries out illumination to solution with light source later, right Methylene blue is degraded.Meanwhile this kind of composite material is not limited to apply in photocatalysis degradation organic contaminant, also is adapted for In the fields such as other photocatalysis fields and photoelectric conversion device, solar cell.
The present invention has following superiority:
(1) monocrystalline silicon surface level load TiO2Nanometer rods, PPy nano-particles, form bionical composite construction, have excellent The reflecting properties that disappear.
(2) in the monocrystalline silicon of p-type and N-type TiO2Contact interface, the N-type TiO of nanometer rods2Nanometer rods and p-type PPy nanoparticles The contact interface of son forms double P/N heterojunction structures, efficiently separates photo-generated carrier, reduces the compound of electron-hole pair, has There is excellent electricity conversion.
(3) this kind of Si/TiO2Using monocrystalline silicon as carrier, nano-complex is not susceptible to reunite/PPy levels composite material, With high specific surface area, effective catalytic activity point is increased, recycling is easy, conducive to Reusability, is polluted in photocatalytic degradation Object space face has certain use value.
(4) this kind of Si/TiO2/ PPy levels composite material and preparation method thereof is easy, and mild condition is easily-controllable, will to consersion unit It asks low, meets the requirement of large-scale production.
Description of the drawings
Fig. 1 is to prepare a kind of technique of the level composite material using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier Schematic diagram;
Fig. 2 is that monocrystalline silicon surface loads TiO in embodiment 32The scanning electron microscopic picture of nanometer rods;
Fig. 3 is that monocrystalline silicon surface level loads TiO in embodiment 32The scanning electron microscopic picture of nanometer rods, PPy nano-particles.
Specific embodiment
Embodiment 1:
Step 1:Monocrystalline silicon surface grows TiO2Crystal seed
Silicon chip is placed in NH3H2O、H2O2And H2In the mixed solution of O, volume ratio 1:1:5, temperature is 80 DEG C, during heating Between 30min.Then, it is dipped in the aqueous isopropanol of the butyl titanate of a concentration of 0.075mol/L and is lifted, the speed of lifting Degree is 2mm/s, repeats lifting 20 times, above-mentioned sample is finally calcined about 30min in 450 DEG C of Muffle furnaces.
Step 2:TiO2Crystal seed induces TiO2The preparation of nanometer rods
The surface obtained in step 2 had into TiO2The silicon chip of crystal seed, which is placed under hydrothermal condition, carries out growth TiO2Nanometer Stick.Hydrothermal synthesizing condition be 130 DEG C at a temperature of, equipped with 10mL deionized waters, 10mL concentrated hydrochloric acids (mass fraction 37%) and 8h is handled in the reaction kettle of 0.5mL butyl titanates, sample is then taken out and is dried up with nitrogen.
Step 3:TiO2PPy nano-particles are prepared in situ in nanorod surfaces
Using oxidation in situ in step 2 obtained TiO2PPy nano-particles are deposited in nanometer rods.Reaction condition For:By the FeCl of 0.03g3, 112.8uL pyrroles, 6mL ultra-pure waters be placed in beaker, form reaction solution;It is 1.5cm by area The growth of × 1.0cm surfaces has TiO2The silicon chip of nanometer rods is placed in reaction solution, and 25min is stirred in holding at room temperature, after reaction, It is rinsed after sample is taken out with a large amount of water, obtains Si/TiO2/ PPy level composite materials.
Si/TiO obtained above2In/PPy level composite materials, the average grain diameter of PPy nano-particles is 35nm, TiO2It receives The average diameter of rice stick is 83nm, average height 818nm.It is tested by uv drs it is found that Si/TiO2/ PPy levels are answered Condensation material shows the outstanding reflecting properties that disappear, light reflectivity 11%;Pass through photoelectricity current test, Si/TiO2/ PPy levels are answered The photoelectric current of condensation material is about respectively pure TiO210 times and 8 times of nanometer rods and pure PPy nano-particles;Pass through the simulated solar ring of light Border, Si/TiO2It is dense to investigate methylene blue with reference to ultraviolet specrophotometer for/PPy level composite material photocatalytic degradation methylene blues Degree changes with time, in 7h that dyestuff methylene blue is degradable, and degradation efficiency is higher than pure TiO2Nanometer rods and pure PPy Nano-particle.
Embodiment 2:
Step 1:Monocrystalline silicon surface grows TiO2Crystal seed
Silicon chip is placed in NH3H2O、H2O2And H2In the mixed solution of O, volume ratio 1:1:5, temperature is 80 DEG C, during heating Between 40min.Then, it is dipped in the aqueous isopropanol of the butyl titanate of a concentration of 0.05mol/L and is lifted, the speed of lifting It is 2mm/s, repeats lifting 15 times, above-mentioned sample is finally calcined into about 1h in 450 DEG C of Muffle furnaces.
Step 2:TiO2Crystal seed induces TiO2The preparation of nanometer rods
The surface obtained in step 1 had into TiO2The silicon chip of crystal seed, which is placed under hydrothermal condition, carries out growth TiO2Nanometer Stick.Hydrothermal synthesizing condition be 130 DEG C at a temperature of, equipped with 10mL deionized waters, 10mL concentrated hydrochloric acids (mass fraction 37%) and 8h is handled in the reaction kettle of 0.5mL butyl titanates, sample is then taken out and is dried up with nitrogen.
Step 3:TiO2PPy nano-particles are prepared in situ in nanorod surfaces
Using oxidation in situ in step 2 obtained TiO2PPy nano-particles are deposited in nanometer rods.Reaction condition For:By the FeCl of 0.03g3, 112.8uL pyrroles, 6mL ultra-pure waters be placed in beaker, form reaction solution;It is 1.5cm by area The growth of × 1.0cm surfaces has TiO2The silicon chip of nanometer rods is placed in reaction solution, and 15min is stirred in holding at room temperature, after reaction, It is rinsed after sample is taken out with a large amount of water, obtains Si/TiO2/ PPy level composite materials.
Si/TiO obtained above2In/PPy level composite materials, the average grain diameter of PPy nano-particles is 19nm, TiO2It receives The average diameter of rice stick is 83nm, average height 818nm.It is tested by uv drs it is found that Si/TiO2/ PPy levels are answered Condensation material shows the outstanding reflecting properties that disappear, light reflectivity 9%;Pass through photoelectricity current test, Si/TiO2/ PPy levels are compound The photoelectric current of material is about respectively pure TiO212 times and 10 times of nanometer rods and pure PPy nano-particles;Pass through the simulated solar ring of light Border, Si/TiO2It is dense to investigate methylene blue with reference to ultraviolet specrophotometer for/PPy level composite material photocatalytic degradation methylene blues Degree changes with time, in 6.5h that dyestuff methylene blue is degradable, and degradation efficiency is higher than pure TiO2Nanometer rods and pure PPy nano-particles.
Embodiment 3:
Step 1:Monocrystalline silicon surface grows TiO2Crystal seed
Silicon chip is placed in NH3H2O、H2O2And H2In the mixed solution of O, volume ratio 1:1:5, temperature is 90 DEG C, during heating Between 30min.Then, it is dipped in the aqueous isopropanol of the butyl titanate of a concentration of 0.1mol/L and is lifted, the speed of lifting It is 2mm/s, repeats lifting 10 times, above-mentioned sample is finally calcined into about 30min in 500 DEG C of Muffle furnaces.
Step 2:TiO2Crystal seed induces TiO2The preparation of nanometer rods
The surface obtained in step 1 had into TiO2The silicon chip of crystal seed, which is placed under hydrothermal condition, carries out growth TiO2Nanometer Stick.Hydrothermal synthesizing condition be 120 DEG C at a temperature of, equipped with 10mL deionized waters, 10mL concentrated hydrochloric acids (mass fraction 37%) and 8h is handled in the reaction kettle of 0.5mL butyl titanates, sample is then taken out and is dried up with nitrogen.
Step 3:TiO2PPy nano-particles are prepared in situ in nanorod surfaces
Using oxidation in situ in step 2 obtained TiO2PPy nano-particles are deposited in nanometer rods.Reaction condition For:By the FeCl of 0.03g3, 112.8uL pyrroles, 6mL ultra-pure waters be placed in beaker, form reaction solution;It is 1.5cm by area The growth of × 1.0cm surfaces has TiO2The silicon chip of nanometer rods is placed in reaction solution, and 10min is stirred in holding at room temperature, after reaction, It is rinsed after sample is taken out with a large amount of water, obtains Si/TiO2/ PPy level composite materials.
Si/TiO obtained above2In/PPy level composite materials, the average grain diameter of PPy nano-particles is 12nm, TiO2It receives The average diameter of rice stick is 83nm, average height 818nm.It is tested by uv drs it is found that Si/TiO2/ PPy levels are answered Condensation material shows the outstanding reflecting properties that disappear, light reflectivity 7%;Pass through photoelectricity current test, Si/TiO2/ PPy levels are compound The photoelectric current of material is about respectively pure TiO215 times and 12 times of nanometer rods and PPy nano-particles;By simulated solar luminous environment, Si/TiO2/ PPy level composite material photocatalytic degradation methylene blues investigate methylene blue concentration with reference to ultraviolet specrophotometer It changes with time, it is in 6h that dyestuff methylene blue is degradable, and degradation efficiency is higher than pure TiO2Nanometer rods and pure PPy receive Rice corpuscles.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, it is impossible to assert The specific implementation of the present invention is confined to these explanations.For the personnel of the technical field of the invention, this is not being departed from Under the premise of inventive concept, many simple deduction or replace can be also made, should all be considered as belonging to protection scope of the present invention.

Claims (9)

1. it is a kind of using monocrystalline silicon as the level composite material of the reflection bilayer P/N hetero-junctions that disappears of carrier, it is with silicon (Si), titanium dioxide Titanium (TiO2) and polypyrrole (PPy) level orderly form, i.e. Si/TiO2/ PPy level composite materials, Si are P (100) type monocrystalline Silicon;TiO2It is the TiO of Rutile Type2Nanometer rods are N-type semiconductor, and quadrangular shape is highly 500~4000nm, a diameter of 40~250nm, orderly vertical-growth is in monocrystalline silicon surface;PPy is polypyrrole nano-particle, is P-type semiconductor, grain size for 10~ 60nm, homoepitaxial is in TiO2Nanorod surfaces;Si/TiO2Si and TiO in/PPy level composite materials2Interface, TiO2With PPy interfaces form double P/N hetero-junctions, can efficiently separate photogenerated charge, while have bionic insect compound eye structural, can be effective Reduce reflectivity of the incident light on surface.
2. a kind of prepare the reflection bilayer P/N hetero-junctions level composite woods that disappear using monocrystalline silicon as carrier as described in claim 1 The preparation method of material, it is characterized in that, include the following steps:
(1) hydrophilic treated is carried out to silicon chip first, grows TiO on its surface2Crystal seed is placed in calcining a period of time in Muffle furnace Natural cooling afterwards;
(2) and then by obtained surface in step (1) has TiO2The silicon chip of crystal seed is placed in reaction kettle, using hydrothermal synthesis Method silicon chip surface grow TiO2Nanometer rods;
(3) TiO finally obtained in step (2)2PPy nano-particles are deposited in nanometer rods, obtain Si/TiO2/ PPy levels are answered Condensation material.
3. preparation method according to claim 2, it is characterised in that:Hydrophilic treated operation described in step (1) is by silicon Piece is placed in NH3H2O、H2O2And H2In the mixed solution of O, volume ratio 1:1:5, temperature is 90 DEG C, heating time 30min.
4. preparation method according to claim 2, it is characterised in that:Growth TiO described in step (1)2Crystal seed condition is will Silicon chip after hydrophilic treated is dipped in the aqueous isopropanol of the butyl titanate of a concentration of 0.05~1mol/L and is lifted or revolved It applies, the speed of lifting is 1~10mm/s, repeats lifting 5~30 times, the speed of spin coating is 500~7000 turns/min, finally by table Has TiO in face2The silicon chip of particle calcines 30~60min in 450~500 DEG C of Muffle furnaces.
5. preparation method according to claim 2, it is characterised in that:Hydrothermal synthesizing condition described in step (2) for 80~ At a temperature of 200 DEG C, equipped with 10~20mL deionized waters, the concentrated hydrochloric acid and 0.5~5mL that 6~17mL mass fractions are 37% 2~19h is handled in the reaction kettle of butyl titanate, sample is then taken out and is dried up with nitrogen.
6. preparation method according to claim 2, it is characterised in that:Described in step (3) in TiO2It is deposited in nanometer rods PPy nano-particles refer to using oxidation in situ in TiO2PPy conducting polymer particles are deposited in nanometer rods, reaction condition is: By the FeCl of 0.01~0.06g3, 50~150uL pyrroles, 5~10mL ultra-pure waters be placed in beaker, reaction solution is formed, by face Product has TiO for the surface growth of 1.5cm × 1.0cm2The silicon chip of nanometer rods is placed in reaction solution, keep at room temperature stirring 10~ 60min obtains Si/TiO2/ PPy level composite materials.
It is 7. a kind of using monocrystalline silicon as the level composite material of the reflection bilayer P/N hetero-junctions that disappears of carrier as described in claim 1 Using the level composite material is used as the application of photocatalysis degradation organic contaminant, by the Si/ of 1.5cm × 1.0cm areas TiO2/ PPy level composite materials are positioned over the methylene blue solution of 5mL, and a concentration of 1.0 × 10-5Then mol/L is placed it in Dark place 1h allows it to reach absorption-desorption balance, carries out illumination to solution with light source later, degrades to methylene blue.
8. a kind of level composite material using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier exists as described in claim 1 Application in photoelectric conversion device.
9. a kind of level composite material using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier exists as described in claim 1 Application in area of solar cell.
CN201511002799.9A 2015-12-28 2015-12-28 A kind of level composite material and application using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier Active CN105642367B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201511002799.9A CN105642367B (en) 2015-12-28 2015-12-28 A kind of level composite material and application using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201511002799.9A CN105642367B (en) 2015-12-28 2015-12-28 A kind of level composite material and application using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier

Publications (2)

Publication Number Publication Date
CN105642367A CN105642367A (en) 2016-06-08
CN105642367B true CN105642367B (en) 2018-06-22

Family

ID=56478002

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201511002799.9A Active CN105642367B (en) 2015-12-28 2015-12-28 A kind of level composite material and application using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier

Country Status (1)

Country Link
CN (1) CN105642367B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106086921B (en) * 2016-06-14 2018-05-08 大连理工大学 Si/TiO is constructed in a kind of crystal face induction2The preparation method of complex light anode
CN109622064B (en) * 2018-12-17 2020-07-03 江南大学 Double-layer three-dimensional bionic anti-reflection composite material and preparation method thereof
CN115261922A (en) * 2022-08-05 2022-11-01 南华大学 Application of titanium dioxide electrode in photoelectrocatalysis

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101555629A (en) * 2009-04-22 2009-10-14 上海第二工业大学 Preparation method of self-assembled sulfonic acid group silane-titanium dioxide composite film on monocrystalline silicon substrate surface
CN101955665A (en) * 2010-08-18 2011-01-26 重庆大学 Method for preparing composite material of polypyrrole granules and titanium dioxide nanotube array
CN102350317A (en) * 2011-07-04 2012-02-15 西安交通大学苏州研究院 Polypyrrole/titanium dioxide composite adsorbent, its preparation, application and regeneration methods
CN102600907A (en) * 2012-03-20 2012-07-25 南京大学 Polypyrrole-sensitized hollow titanium dioxide nanometer photocatalyst and preparation method thereof
CN104677767A (en) * 2015-03-04 2015-06-03 浙江大学 QCM (quartz crystal microbalance) based polypyrrole/ titanium dioxide frequency type film gas sensitive sensor and preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005000734A2 (en) * 2002-10-04 2005-01-06 The Ohio State University Research Foundation Method of forming nanostructures on ceramics and the ceramics formed

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101555629A (en) * 2009-04-22 2009-10-14 上海第二工业大学 Preparation method of self-assembled sulfonic acid group silane-titanium dioxide composite film on monocrystalline silicon substrate surface
CN101955665A (en) * 2010-08-18 2011-01-26 重庆大学 Method for preparing composite material of polypyrrole granules and titanium dioxide nanotube array
CN102350317A (en) * 2011-07-04 2012-02-15 西安交通大学苏州研究院 Polypyrrole/titanium dioxide composite adsorbent, its preparation, application and regeneration methods
CN102600907A (en) * 2012-03-20 2012-07-25 南京大学 Polypyrrole-sensitized hollow titanium dioxide nanometer photocatalyst and preparation method thereof
CN104677767A (en) * 2015-03-04 2015-06-03 浙江大学 QCM (quartz crystal microbalance) based polypyrrole/ titanium dioxide frequency type film gas sensitive sensor and preparation method thereof

Also Published As

Publication number Publication date
CN105642367A (en) 2016-06-08

Similar Documents

Publication Publication Date Title
Kumar et al. Wide spectral degradation of Norfloxacin by Ag@ BiPO4/BiOBr/BiFeO3 nano-assembly: elucidating the photocatalytic mechanism under different light sources
CN105618153B (en) A kind of silicon titanium dioxide polypyrrole three-dimensional bionic composite and application based on level assembling
Lo et al. Study of ZnSnO3-nanowire piezophotocatalyst using two-step hydrothermal synthesis
CN106732708B (en) Graphite phase carbon nitride nanometer sheet loads single layer Bismuth tungstate nano-sheet heterojunction material and its preparation method and application
CN102513079B (en) Controllable crystalline titanium dioxide and graphene composite material with efficient photoelectric activity and preparation method thereof
Yang et al. Carrier transport in dye-sensitized solar cells using single crystalline TiO2 nanorods grown by a microwave-assisted hydrothermal reaction
Harish et al. Synthesis of ZnO/SrO nanocomposites for enhanced photocatalytic activity under visible light irradiation
CN102921435A (en) Magnetic Fe3O4/SiO2/TiO2/quantum dot compounded nanometer photocatalyst and preparation method and application thereof
CN105542456B (en) A kind of silicon titanium dioxide polyaniline composite material and application based on the assembling of ternary level
CN105642367B (en) A kind of level composite material and application using monocrystalline silicon as the reflection bilayer P/N hetero-junctions that disappears of carrier
CN107469804A (en) A kind of titania-based composite photocatalyst material of nano particle bismuth load and its preparation method and application
CN105964233B (en) One kind, which disappears, reflects hetero-junctions composite coating and preparation method thereof
CN109967074A (en) A kind of preparation method and application of the titanium dioxide optical catalyst of silver load
CN102989514A (en) Noble metal palladium deposited-polypyrrole sensitized hollow type titanium dioxide nanometer photocatalyst and preparation method thereof
CN104475116B (en) The preparation method of the iron sesquioxide nanometer stick array that stannic oxide nano wire is modified
Li et al. Preparation and photocatalytic performance of dumbbell Ag2CO3–ZnO heterojunctions
CN102569444B (en) Solar cell structure with wide spectrum high absorption and manufacturing method thereof
CN107511145A (en) A kind of bar-shaped hierarchical organization pucherite material of corn of nano-particle accumulation and preparation method thereof
Lavanya et al. Effect of Bi doping on the opto-electronic properties of ZnO nanoparticles for photodetector applications
CN106000440A (en) Preparation method of g-C3N4 quantum dot-loaded titanium dioxide nanoparticles
Sahu et al. ZnO-Nanorod/Ag2O-Nanoparticle/rGO-Nanosheet Heterostructures as Photocatalysts for Enhanced Degradation of Harmful Aqueous Phase Contaminants under Extended Visible Light Exposure
CN102320653A (en) Anisotropic etching light trapping V-type micro-nano structure titanium dioxide material and application thereof
CN107583642A (en) Graphene quantum dot loaded Ag TiO2The preparation method of nano-array
Chandra et al. TiO2 nanorods decorated Si nanowire hierarchical structures for UV light activated photocatalytic application
Shrivastava et al. Materials for solar cell applications: an overview of TiO 2, ZnO, upconverting organic and polymer-based solar cells

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant