CN100424908C - Conductive state polyaniline/nanometer crystal TiO2 heterodiode and preparing method - Google Patents
Conductive state polyaniline/nanometer crystal TiO2 heterodiode and preparing method Download PDFInfo
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- CN100424908C CN100424908C CNB2005100170075A CN200510017007A CN100424908C CN 100424908 C CN100424908 C CN 100424908C CN B2005100170075 A CNB2005100170075 A CN B2005100170075A CN 200510017007 A CN200510017007 A CN 200510017007A CN 100424908 C CN100424908 C CN 100424908C
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- nanocrystal
- film
- conductive polyaniline
- tio
- ito glass
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Abstract
The present invention particularly relates to a P-N heterodiode and a preparation method of the heterodiode. Electric conduction state polyaniline is used as P type semiconductor materials, and nanocrystal TiO2 is used as N type semiconductor materials. The P-N heterodiode has the assembly and preparation method that firstly, a layer of uniform and compact nanocrystal TiO2 film is grown on an ITO glass substrate through a sol-gal technology, then the other ITO glass and a shock insulator object are covered on the surface of the nanocrystal TiO2 film through double-face adhesives used as binding materials, and finally, under the capillary action, the solution of the electric conduction state polyaniline is injected between the nanocrystal TiO2 film and the ITO glass, and dissolvant is volatilized at normal temperature. The present invention adopts organic high molecular conducting materials to serve as the P type semiconductor materials, the P type semiconductor materials and the N type nanocrystal TiO2 are assembled to prepare the heterodiode which has good rectification characteristics (when voltage is 2 V, rectification ratio is greater than 160), simple preparation methods and convenient control.
Description
Technical field
The invention belongs to field of semiconductor devices, being specifically related to a kind of is P type semiconductor material, nanocrystal TiO with the conductive polyaniline
2Be the P-N heterojunction diode of N type semiconductor material and the preparation method of this heterojunction diode.
Background technology
TiO
2As a kind of oxide semiconductor material, its valence band is O2p, and conduction band is Ti3d, and energy gap is 3.0-3.2ev, adopts the TiO of usual method (physics vapor phase deposition method, chemical meteorology deposition method, sol-gel process) preparation
2Material, because chemistry produces oxygen (O) room than departing from, material is N type conduction.Nano-TiO
2(particle size range is between 30-50nm) is a kind of semi-conducting material that has a extensive future, its good photosensitive, air-sensitive and characteristic such as pressure-sensitive, particularly photocatalysis characteristic makes it at solar cell, optical-electrical converter, photocatalysis elimination and aspects such as degradation of contaminant and various transducers tempting application prospect be arranged.
Sol-gel process is the preparation nano-TiO
2One of main method of crystal, its topmost physical and chemical process are exactly to hydrolysis and polycondensation reaction that colloidal sol and gel conversion took place by the alcoholic solution of metal alkoxide.The course of reaction that is taken place in alkoxide-ethanol-water system is very complicated.Usually be raw material with the organic alkoxide of metal, make colloidal sol, go forward side by side an one-step polycondensation and obtain gel by hydrolysis and polycondensation reaction.With tetrabutyl titanate Ti (OC
4H
9)
4Be the feedstock production nano-TiO
2The time, Ti (OC
4H
9)
4(be Ti (OBu)
4) the following hydrolysis condensation reaction of generation:
Hydrolysis:
Ti(OBu)
4+nH
2O→Ti(OBu)
4-n(OH)
n+nHOBu
The dehydration polycondensation:
≡Ti
4/OH+HO
4/Ti≡→≡Ti-O
4/Ti≡+H
2O
Lose pure polycondensation:
≡Ti
4/OR+HO
4/Ti≡→≡Ti-O
4/Ti≡+ROH
Wherein, n≤4 o'clock, Ti (OC
4H
9)
4With low amounts of water generation hydrolysis, generate Ti (OBu)
4-n(OH)
nMonomer is if hydration TiO then appears in n=4
2Precipitation.Need to add catalyst in reaction, purpose is in order to control Ti (OC
4H
9)
4Hydrolysis and condensation polymerization speed.Be dispersed in the Ti (OBu) in the alcohol
4-n(OH)
nMonomer generation polycondensation reaction is through Ti (OBu)
4-n(OH)
nThe dehydration of monomer and lose pure polycondensation, generation-Ti-O-Ti-bridging oxygen key, and cause the formation of two and three dimensions network configuration.The difference of amount of water in the reaction system, the polymer of formation can be linearity, two dimension or three-dimensional structure.Prepare film, wish that then polymer is linear, therefore, the addition of water is wanted suitably.If in solution, add chelating agent, then can delay the process of hydrolysis and polycondensation reaction, for example under acid condition, acetate ion plays two ligand effects in the chelatropic reaction, is difficult for being removed by water, generates the big polymer Ti (OBu) that contains two groups in reaction
4-x(H
3COO)
x, hydrolysis condensation reaction takes place in this polymer again, forms three-dimensional network configuration.
Chelatropic reaction:
Ti(OBu)
4+xCH
3COOH→Ti(OBu)
4-x(CH
3COO)
x+xBuOH
In recent years, conducting polymer composite is subjected to various countries scientist's extensive concern because having good electricity, magnetics and optical characteristics.As the prototype and the representative of conducting polymer composite, polyacetylene has obtained system and research in depth, has effectively promoted the renewal about many traditional concepts of electric conduction phenomena and essence.Made Schottky barrier and multiple P-N knot through the effort polyacetylene of more than ten years, but the environmental stability of polyacetylene is very poor, practical application is restricted.
Summary of the invention
The purpose of this invention is to provide a kind of employing organic macromolecule conducting material as P type semiconductor material and nanocrystal TiO
2As the heterojunction diode of N type semiconductor material assembling and the preparation method of this heterojunction diode.
The photovoltaic type photoelectric device highly sensitive, response characteristic good, is one of optimum structure pattern of present high-grade photoelectric device.But many oxide semiconductor materials can only be made N type electric conducting material usually and be difficult to make the P-type conduction material, thereby realize that on technology the P-N knot is very difficult, have therefore limited the application of these materials on device.TiO
2Material also is so, adopts the TiO of usual method preparation
2Material, because chemistry produces the O room than departing from, material is N type conduction, is difficult for obtaining the P-type conduction material by general doping method.In view of above reason the present invention adopts the nanocrystal TiO of organic macromolecule conducting material as P type semiconductor material and N type
2Assembling has prepared have the good rectification characteristic heterojunction diode of (during 2V, commutating ratio is greater than 160), and its preparation method simply is convenient to grasp.
Heterojunction diode of the present invention is successively by ito glass top electrode, nanocrystal TiO
2N type knot, P type knot, ito glass bottom electrode are formed, and it is characterized in that: the P type is become conductive polyaniline, and its thickness is 50～100 μ m, TiO
2The thickness of N type knot is 0.1～0.2 μ m.
Polyaniline is as a member in the conducting polymer composite family, except having the common characteristic of other conducting polymer composite, also have unique doping phenomenon, excellent electrochemical reversibility and environmental stability concurrently, raw material is easy to get in addition, simple synthetic method is considered to the conducting polymer that is hopeful to be applied in practice most at present.The molecular weight of polyaniline very big (generally more than several ten thousand), its chemical formula can be expressed as-[(C
6H
4-NH-C
6H
4-NH)
y-(C
6H
4-N=C
6H
4=N)
1-y]
X-(wherein X is an integer, and y is between 0,1), (C here
6H
4-NH-C
6H
4-NH) be reduction unit, and (C
6H
4-N=C
6H
4=N) be oxidation unit, when y=1 the structure of reduction fully, when y=0 the structure of complete oxidation, the material that the present invention adopts is half oxidation and the semi-reduction structure (emeraldine) of y=0.5.
The polyaniline of eigenstate (emeraldine base EB) is also non-conductive, mixes but it is carried out proton, and its conductivity can rise significantly.For example, the polyaniline of eigenstate is exposed in the Bronsted acid (hydrochloric acid), polyaniline just can change conductive state (emeraldine salt ES) by original eigenstate, and presents the character of P type semiconductor material.
(X is an integer) is the cycling element of polyaniline eigenstate (EB) and conductive state (ES) as shown in the figure
The preparation process of heterojunction diode of the present invention is as follows:
A, to adopt sol-gel process be the nanocrystal TiO of the even compact of 0.1-0.2 μ m at the ITO that cleaned (tin indium oxide, ndium tin oxide) transparent conducting glass substrate (cleaning substrate: successively with acetone, ethanol and the ultrasonic cleaning of the deionized water difference ten minutes) layer thickness of upward growing
2Film;
B, be that the cotton paper two-sided tape of 50～100 μ m is bonded at the nanocrystal TiO that steps A prepares through the ito glass thickness that cleans with another sheet
2The surface and the compacting of film;
The cotton paper two-sided tape uses as jointing material and chock insulator matter in this patent, its objective is that the device that makes preparation can be bonded into one, and the area of space of the definite shape that is surrounded by two or many cotton paper two-sided tapes is easy to carry out the preparation of P type knot in the later step.
The cotton paper two-sided tape is to coat pressure sensitive adhesive on the two sides of base material, form coated with the separated type material cotton paper manufacturing of easily peeling off, is widely used in the bonding and fixing of two articles, uses very convenient.Commercially available cotton paper double faced adhesive tape all can be used for this patent, as the two-sided cotton paper adhesive tape of yongda board that Yong Da adhesive tape factory in Hangzhou produces, DS-861 (wide 9mm), the two-sided cotton paper adhesive tape of DS-862 (wide 19mm) type that Shanghai Yuhuan adhesive article Co., Ltd (No. three tunnel 669, mausoleum, new bridge town, Shanghai Songjiang district) produces; The GSM-3 type that the inferior safe big promise adhesive article Co., Ltd (Industrial Development District ,Tongzhou District ,Beijing City 101113) in Beijing produces, registered trade mark is the general applications cotton paper two-sided tape of Qingniao Co.'s adhesive tape, and its performance parameter is: width (mm): 3,5,12,24,36,48,72; Thickness (mm): 0.095; Raw material: the isolation of Ge Laxin paper, cotton paper, water-based acryl glue; Peeling force (N/20mm): 〉=13.
C, device keep flat, and conductive polyaniline solution (solvent is that volume ratio is 1: 1 metacresol and a chloroform, and the mass concentration of conductive polyaniline is 15%～30% in the solution) is slowly dropped in nanocrystal TiO
2Between the ito glass of film and step B, solution penetrates in the device in the area of space of the definite shape that is surrounded by two or many cotton paper two-sided tapes equably by capillarity, under normal temperature (about 15～25 ℃), solvent evaporates is fallen again, promptly obtained the described conductive polyaniline of this patent/nanocrystal TiO
2Heterojunction diode.
The described nanocrystal TiO of steps A
2The preparation method of film, its concrete steps are as follows:
Under a, the normal temperature (15～25 ℃) with the TiCl of 5～20mL
4Or Ti (OC
4H
9)
4Under vigorous stirring, be added drop-wise in the absolute ethyl alcohol of 50～200mL, be added dropwise to glacial acetic acid, hydrochloric acid or the nitric acid of 5～20mL again,, obtain the yellow solution of homogeneous transparent through the stirring of 30～120min; The deionized water of the 5～20mL speed with 1～2/s slowly is added drop-wise in the above-mentioned solution again, continues to stir the faint yellow colloidal sol that 1～3h obtains homogeneous transparent, it is stand-by to place ageing 1～5 hour;
B, the colloidal sol of ageing is prepared film on the ito glass substrate, the system film adopts the method for spin coating, and rotary speed is 1000～3000rpm;
C, film is put into the Muffle furnace roasting at last, temperature is controlled to be 400～500 ℃, and roasting time is 0.5～2h, and powered-down naturally cools to room temperature by film with stove afterwards.
Description of drawings
Fig. 1: device architecture of the present invention and test voltage-current characteristic schematic diagram;
Fig. 2: ITO/ nanocrystal TiO
2The V-I curve of/ITO structure;
Fig. 3: the V-I curve of ITO/ conductive polyaniline/ITO;
Fig. 4: ITO/ nanocrystal TiO
2The V-I curve of/conductive polyaniline/ITO;
Fig. 5: (a) two kinds of bonding direction schematic diagrames of (b) two-sided tape.
As shown in Figure 1, wherein 1 expression ito glass top electrode, 2 is represented TiO
2N type knot, 3 expression polyaniline P type knots, 4 expression ito glass bottom electrodes.As shown in Figure 5,5 surfaces be parallel two-sided tape, 4 the expression be the ito glass bottom electrode.
From Fig. 2 and Fig. 3, we as can be seen its V-I curve be the straight line of initial point, this shows that their contact is an ohmic contact, ITO/ nanocrystal TiO
2Between, between the ITO/ conductive polyaniline and non-fairing nature.And the V-I curve of Fig. 4 has good rectification characteristic, and commutating ratio is greater than 160 during 2V, and this illustrates nanocrystal TiO
2Really there is the P-N heterojunction between the/conductive polyaniline.
Embodiment
Embodiment 1:
A：
Under 25 ℃ of a, room temperature with the Ti (OC of 10mL
4H
9)
4Under vigorous stirring, be added drop-wise in the 100mL absolute ethyl alcohol, be added dropwise to the glacial acetic acid of 10mL again,, obtain the yellow solution of homogeneous transparent through the stirring of 30min; The speed of 10mL deionized water with 2/s slowly is added drop-wise in the above-mentioned solution, continues to stir the faint yellow colloidal sol that 1h obtains homogeneous transparent, it is stand-by to place ageing 3h;
B, prepare film with the colloidal sol of ageing on the ito glass substrate, the system film adopts the method for spin coating, and rotary speed is 1000rpm;
C, film is put into the Muffle furnace roasting at last, temperature is controlled at 450 ℃, and roasting time is 1h, and powered-down naturally cools to room temperature by film with stove afterwards.
B：
Be to cover the nanocrystal TiO for preparing above as jointing material and chock insulator matter after two parallel cotton paper two-sided tapes of 50 μ m remove cotton paper with another sheet ito glass with thickness again
2The surface of film;
C：
Again with device placing flat desktop, (solvent is that volume ratio is 1: 1 metacresol and a chloroform with conductive polyaniline solution, the mass concentration of conductive polyaniline is 25% in the solution) slowly drop on the ito glass of step B, solution penetrates in the device by capillarity equably, under the normal temperature (about 15～25 ℃) solvent evaporates is fallen, promptly prepared device of the present invention.
The test of device voltage-current characteristic: draw lead on the ITO surface and carry out the test of voltage-current characteristic according to connecting circuit as shown in Figure 1 with conductive silver glue (Beijing Non-Fervoous Metal Inst.).
The ITO electro-conductive glass can be extensively available from the how tame unit in the whole nation, creates beneficial development in science and technology Co., Ltd as the Shenzhen, and the following type product of its company all can be applicable to this patent.
| Product type | Thickness um | Transmitance | Face resistance | The harsh time |
| NYISG-001 | 200+/-50A | ＞87％ | ＜150 | ＜25sec |
| NYISG-002 | 300+/-50A | ＞86％ | ＜110 | ＜30sec |
| NYISG-003 | 350+/-50A | ＞84％ | ＜60 | ＜40sec |
| NYISG-004 | 500+/-50A | ＞84％ | ＜45 | ＜50sec |
| NYISG-005 | 600+/-50A | ＞82％ | ＜30 | ＜60sec |
| NYISG-006 | 1200+/-200A | ＞85％ | ＜15 | ＜100sec |
Conductive silver glue is the conductive silver seal China ink that is specifically designed to thin film switch and PC plate, has the advantage that is difficult for dry, quick low temperature drying, excellent electric conductivity and high adhesion force.523590) or Guangzhou Te Kenuo electronics technology Co., Ltd (address: 9 floor Building F, No. 3 building, No. 8 Canadian gardens, maple leaf road, Tianhe District Zhong Shan main road, Guangzhou) or China day prosperous Electron Material Co., Ltd (23 in the city of Yushan, Kunshan City, Jiangsu Province town No. 628 hope in north of the city business parking north gate road) also can be available from the easy deep silk-screen equipment of Dongguan City Xie Gang factory (address: the big thick directorial area of Chinese Guangdong Dongguan City Xie Gang, postcode:.
For conductive polyaniline and nanocrystal TiO are described more fully
2Contact be the P-N heterojunction, we are also to ITO/ nanocrystal TiO
2The test of having carried out voltage-current characteristic that contacts with the ITO/ conductive polyaniline.Its test result is respectively ITO/ nanocrystal TiO shown in Fig. 2-4
2The V-I curve of/ITO, ITO/ conductive polyaniline/ITO and ITO/ nanocrystal TiO2/ conductive polyaniline/ITO.
Claims (4)
1. conductive polyaniline/nanocrystal TiO
2Heterojunction diode is successively by ito glass top electrode (1), nanocrystal TiO
2N type knot (2), P type knot (3), ito glass bottom electrode (4) are formed, and it is characterized in that: P type knot (3) is conductive polyaniline, and its thickness is 50～100 μ m, TiO
2The thickness of N type knot (2) is 0.1～0.2 μ m.
2. the described conductive polyaniline of claim 1/nanocrystal TiO
2The preparation method of heterojunction diode, its step is as follows:
A, to adopt the sol-gel process layer thickness of growing on the ITO transparent conducting glass substrate that cleaned be the nanocrystal TiO of the even compact of 0.1～0.2 μ m
2Film;
B, be the area of space that two of 50～100 μ m or many cotton paper two-sided tapes surround definite shape through the ito glass thickness that cleans, be bonded at the nanocrystal TiO that steps A prepares then another sheet
2The surface and the compacting of film;
C, device keep flat, with volume ratio is that 1: 1 metacresol and chloroform is solvent, and conductive polyaniline is dissolved in the solvent, obtains conductive polyaniline solution, the mass concentration of conductive polyaniline is 15～30% in the solution, and conductive polyaniline solution is slowly dropped in nanocrystal TiO
2Between the ito glass of film and step B, under 15～25 ℃, solvent evaporates is fallen again, promptly obtained conductive polyaniline/nanocrystal TiO
2Heterojunction diode.
3. conductive polyaniline as claimed in claim 2/nanocrystal TiO
2The preparation method of heterojunction diode is characterized in that: nanocrystal TiO
2The preparation process of film is as follows:
Under a, the normal temperature (15～25 ℃) with the TiCl of 5～20mL
4Or Ti (OC
4H
9)
4Under vigorous stirring, be added drop-wise in the absolute ethyl alcohol of 50～200mL, be added dropwise to glacial acetic acid, hydrochloric acid or the nitric acid of 5～20mL again,, obtain the yellow solution of homogeneous transparent through the stirring of 30～120min; The deionized water of the 5～20mL speed with 1～2 droplet/second slowly is added drop-wise in the above-mentioned solution again, continues to stir the faint yellow colloidal sol that 1～3h obtains homogeneous transparent, it is stand-by to place ageing 1～5 hour;
B, the colloidal sol of ageing is prepared film on the ito glass substrate, the system film adopts the method for spin coating, and rotary speed is 1000～3000rpm;
C, film is put into the Muffle furnace roasting at last, temperature is controlled to be 400～500 ℃, and roasting time is 0.5～2h, and powered-down naturally cools to room temperature by film with stove afterwards.
4. as claim 2 or 3 described conductive polyaniline/nanocrystal TiO
2The preparation method of heterojunction diode is characterized in that: surround area of space with two parallel cotton paper two-sided tapes.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100170075A CN100424908C (en) | 2005-07-28 | 2005-07-28 | Conductive state polyaniline/nanometer crystal TiO2 heterodiode and preparing method |
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|---|---|---|---|
| CNB2005100170075A CN100424908C (en) | 2005-07-28 | 2005-07-28 | Conductive state polyaniline/nanometer crystal TiO2 heterodiode and preparing method |
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|---|---|
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| CN100424908C true CN100424908C (en) | 2008-10-08 |
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|---|---|---|---|
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105665013A (en) * | 2015-12-28 | 2016-06-15 | 江南大学 | Three-dimensional bionic composite material based on refection elimination and double-layer P/N heterojunction and application thereof |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105542456B (en) * | 2015-12-28 | 2018-02-16 | 江南大学 | A kind of silicon titanium dioxide polyaniline composite material and application based on the assembling of ternary level |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989738A (en) * | 1996-06-28 | 1999-11-23 | U.S. Philips Corporation | Organic electroluminescent component with charge transport layer |
| CN1454390A (en) * | 2000-09-06 | 2003-11-05 | 奥斯兰姆奥普托半导体股份有限两合公司 | Encapsulation for OLED devices |
| JP2004071682A (en) * | 2002-08-02 | 2004-03-04 | Casio Electronics Co Ltd | Inorganic-organic thin-film composite material |
| WO2004090921A2 (en) * | 2003-04-05 | 2004-10-21 | Imperial College Innovations Ltd. | Composite structure |
-
2005
- 2005-07-28 CN CNB2005100170075A patent/CN100424908C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5989738A (en) * | 1996-06-28 | 1999-11-23 | U.S. Philips Corporation | Organic electroluminescent component with charge transport layer |
| CN1454390A (en) * | 2000-09-06 | 2003-11-05 | 奥斯兰姆奥普托半导体股份有限两合公司 | Encapsulation for OLED devices |
| JP2004071682A (en) * | 2002-08-02 | 2004-03-04 | Casio Electronics Co Ltd | Inorganic-organic thin-film composite material |
| WO2004090921A2 (en) * | 2003-04-05 | 2004-10-21 | Imperial College Innovations Ltd. | Composite structure |
Non-Patent Citations (4)
| Title |
|---|
| 纳米TiO2/聚苯胺复合膜电极的制备及其电化学性能. 魏亦军，褚道葆，姚文俐.合成化学，第12卷第1期. 2004 |
| 纳米TiO2/聚苯胺复合膜电极的制备及其电化学性能. 魏亦军，褚道葆，姚文俐.合成化学，第12卷第1期. 2004 * |
| 纳米尺度TiO2聚苯胺多孔膜电极光电化学研究. 柳闽生，郝彦忠，乔学斌等.电化学，第4卷第3期. 1998 |
| 纳米尺度TiO2聚苯胺多孔膜电极光电化学研究. 柳闽生，郝彦忠，乔学斌等.电化学，第4卷第3期. 1998 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105665013A (en) * | 2015-12-28 | 2016-06-15 | 江南大学 | Three-dimensional bionic composite material based on refection elimination and double-layer P/N heterojunction and application thereof |
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|---|---|
| CN1731596A (en) | 2006-02-08 |
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Assignee: Ningbo Victory Electronic Co.,Ltd. Assignor: Jilin University Contract fulfillment period: 2009.4.1 to 2014.7.28 contract change Contract record no.: 2009220000005 Denomination of invention: Conductive state polyaniline/nanometer crystal TiO2 heterodiode and preparing method Granted publication date: 20081008 License type: Exclusive license Record date: 2009.5.21 |
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