CN105655409A - Thin film transistor with metal coating and preparation method of transistor - Google Patents
Thin film transistor with metal coating and preparation method of transistor Download PDFInfo
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- CN105655409A CN105655409A CN201610176781.9A CN201610176781A CN105655409A CN 105655409 A CN105655409 A CN 105655409A CN 201610176781 A CN201610176781 A CN 201610176781A CN 105655409 A CN105655409 A CN 105655409A
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- 239000002184 metal Substances 0.000 title claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 54
- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000011248 coating agent Substances 0.000 title abstract description 6
- 238000000576 coating method Methods 0.000 title abstract description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 22
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000005253 cladding Methods 0.000 claims description 41
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 230000003647 oxidation Effects 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 11
- 239000007769 metal material Substances 0.000 claims description 9
- 238000011161 development Methods 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 9
- 230000007547 defect Effects 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 238000000231 atomic layer deposition Methods 0.000 abstract 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910009973 Ti2O3 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- -1 metal Al Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a thin film transistor with a metal coating and a preparation method of the transistor. The method comprises the steps that a graph of a gate electrode is defined through exposure and developing, and the gate electrode grows; a gate medium layer is deposited, a source electrode and a drain electrode are deposited, an active layer is sputtered, and then the metal coating continuously grows, wherein by means of the mode of continuously growing the active layer and the metal coating, reducing of the defect state density of a back interface is facilitated; a device is put in the air for annealing, and the metal coating is oxidized to generate a metal oxide which serves as a natural passivation layer. Compared with a method for generating aluminum oxide through atomic layer deposition (ALD), according to the preparation method, the technology is simple, the cost is low, and the practicability is high. For the characteristic that the metal semiconductor oxide is high in atmosphere sensitivity, due to the fact that the metal oxide serves as the passivation layer, improvement of the reliability of the device in the air is facilitated.
Description
Technical field
The present invention relates to thin film transistor (TFT), be specifically related to a kind of thin film transistor (TFT) with metal cladding and preparation method thereof.
Background technology
In the current era of science and technology fast development, Display Technique, as the key component of China's electronic information technology, also presents developing state with rapid changepl. never-ending changes and improvements. Looking back the China in 2015 development in panel field, China has 8 8.5 generations and above liquid crystal panel production line realizes volume production, and BOE invests to build global first bar 10.5 generation line, and the shipment amount of liquid crystal panel comes out at the top in the world. Three important stages are also gone through in the liquid crystal technology development in the past: twisted-nematic TN-LCD, super twisted nematic STN-LCD and thin film transistor (TFT) array TFT-LCD. Tft liquid crystal shows that advantages such as possessing fast response time, definition height, rich color becomes the dominant technology that can be gone into operation, and also becomes the research emphasis of current sphere of learning.
The research of thin-film-transistor material also development, including non-crystalline silicon, polysilicon, Organic substance and present study hotspot zno-based material. Oxide semiconductor material electron mobility is high, it is possible to achieve bigger driving electric current, the response speed of device is accelerated therewith. Zno-based thin film is the semi-conducting material of a kind of broad-band gap, and in limit of visible spectrum, transmitance is high, it is possible to preparation is on glass, it is achieved Transparence Display. In actual applications, preparation technology is simple, and uniformity is good, with low cost. But, in realizing excellent performance, higher reliability etc. further, need nonetheless remain for paying a lot of effort, be worth further research.
Realizing above in technique, the preparation method generally adopted has vacuum sputtering coating, vacuum vapor plating, ion beam depositing, plasma enhanced chemical vapor deposition PECVD, ald ALD etc. In these technology modes, have to be no lack of price high. In the present invention, a kind of oxide semiconductor thin-film transistor with metal cladding bottom gate coplanar structure and preparation method thereof is we provided.
Summary of the invention
In order to overcome above problems of the prior art, the present invention proposes a kind of thin film transistor (TFT) with metal cladding and preparation method thereof, growth active layer and metal cladding continuously, back of the body interface defect density can be reduced, after annealing oxidation generates metal-oxide and then serves as passivation layer in atmosphere, being with low cost compared with the aluminium oxide adopting ALD mode to grow, process is simple;Simultaneously at aspect of performance, it helps improve the reliability of device.
It is an object of the present invention to propose a kind of thin film transistor (TFT) with metal cladding.
The thin film transistor (TFT) with metal cladding of the present invention includes: substrate, gate electrode, gate dielectric layer, source electrode, drain electrode, active layer and metal cladding; Wherein, gate electrode is positioned at substrate; Gate dielectric layer is positioned on gate electrode; Source electrode and drain electrode are positioned on gate dielectric layer, and lay respectively at the both sides of gate dielectric layer; Active layer covers gate dielectric layer, source electrode and drain electrode; Metal cladding is grown on active layer continuously, is formed with the stack layer of active layer and metal cladding; Metal cladding is the metal-oxide that metal anneal oxidation in atmosphere generates, as passivation layer.
Active layer adopts metal oxide semiconductor films. Metal cladding adopts and can generate the metal material of metal-oxide by anneal oxidation in atmosphere, such as aluminum Al or titanium Ti; Growing metal material on active layer continuously, annealing rear oxidation generates metal-oxide in atmosphere, thus forming passivation layer on active layer. Being grown in the metal material on active layer continuously, need complete oxidation in atmosphere after annealing, the thin film transistor (TFT) otherwise formed will not have grid-control characteristic, and therefore, the thickness of metal cladding is between 5��10nm; The time of annealing, temperature was between 300��400 DEG C at 1��2 hour.
Further object is that the preparation method that a kind of thin film transistor (TFT) with metal cladding is provided.
The preparation method that the present invention has the thin film transistor (TFT) of metal cladding, comprises the following steps:
1) on substrate, puddle development generates the figure of gate electrode, deposits layer of transparent conductive film material, then peels off and forms gate electrode;
2) growing one layer of insulant on gate electrode, then etching forms gate dielectric layer;
3) growing layer of transparent conductive film material on gate dielectric layer, then etching forms source electrode and drain electrode;
4) gluing alignment generates the figure of active area, deposits layer of metal oxide semiconductor thin-film;
5) consecutive deposition layer of metal material again, then peels off together, is formed with the stack layer of active layer and metal cladding;
6) anneal in atmosphere, control time and the temperature of annealing so that be grown in the metal cladding complete oxidation on active layer continuously and generate metal-oxide, as passivation layer.
Wherein, in step 1) in, substrate adopts glass; Gate electrode adopts the one in transparent conductive material ITO, AZO and GZO.
In step 2) in, gate dielectric layer adopts the one in the insulant such as silicon dioxide, silicon nitride, aluminium oxide and zirconium oxide.
In step 3) in, source electrode and drain electrode adopt the one in transparent conductive material ITO, AZO and GZO.
In step 4) in, the metal oxide semiconductor films of deposit adopts the one in the zno-based materials such as IGZO, ZTO, AZO, TiZO, HfZO, NiZO and GdAZO, adopts the preparation of rf magnetron sputtering technique to be formed, and thickness is between 25��50nm.
In step 5) in, metal material adopts and is prone to anneal oxidation in atmosphere and generates the material of metal-oxide, such as metal Al, generates Al by anneal oxidation2O3, or metal Ti, anneal oxidation generates Ti2O3, and then serve as passivation layer. It addition, want complete oxidation after annealing, therefore thickness is between 5��10nm.
In step 6) in, the time of annealing, temperature was between 300��400 DEG C at 1��2 hour.
Advantages of the present invention:
The present invention first exposure imaging defines gate electrode figure, growth gate electrode, then gate dielectric layer is deposited, then deposit source electrode and drain electrode, sputter one layer of active layer again, growing metal cladding continuously, the mode of this continuous growth active layer and metal cladding contributes to reducing the defect state density at back of the body interface; Finally being placed in by device in air and anneal, metal cladding oxidation generates metal-oxide and then serves as natural passivation layer, and technique is simple compared with the method adopting ALD generation aluminium oxide, with low cost, practical; Being directed to the characteristic that metal semiconductor oxide is higher to atmosphere sensitivity, metal-oxide is conducive to improving the aerial reliability of device as passivation layer.
Accompanying drawing explanation
Fig. 1 is the profile of an embodiment of the thin film transistor (TFT) with metal cladding of the present invention;
Fig. 2 (a)��(f) sequentially show the main technological steps of the preparation method of the thin film transistor (TFT) with metal cladding of the present invention;
Fig. 3 is the transfer characteristic curve figure of the thin film transistor (TFT) that the preparation method of the thin film transistor (TFT) with metal cladding according to the present invention obtains.
Detailed description of the invention
Below in conjunction with accompanying drawing, by specific embodiment, the present invention is expanded on further.
As it is shown in figure 1, the thin film transistor (TFT) with metal cladding of the present embodiment includes: substrate 1, gate electrode 2, gate dielectric layer 3, source electrode and drain electrode 4, active layer 5 and metal cladding 6; Wherein, gate electrode 2 is positioned on substrate 1; Gate dielectric layer 3 is positioned on gate electrode 2; Source electrode and drain electrode 4 are positioned on gate dielectric layer 3, and lay respectively at the both sides of gate dielectric layer; Active layer 5 covers gate dielectric layer, source electrode and drain electrode; Metal cladding 6 is grown on active layer 5 continuously; Metal cladding is the metal-oxide that metal anneal oxidation in atmosphere generates, as passivation layer.
In the present embodiment, substrate 1 adopts glass substrate; Gate electrode, source electrode and drain electrode adopt ITO; Gate dielectric layer adopts silicon dioxide; Active layer adopts IGZO, thickness 30nm; Metal cladding adopts Al, thickness 5nm, and in air, anneal oxidation generates Al2O3��
The method of the preparation of the thin film transistor (TFT) with metal cladding of the present embodiment, comprises the following steps:
1) glass substrate 1 is provided, as shown in Fig. 2 (a), on substrate, puddle development generates the figure of gate electrode, adopts magnetron sputtering technique to grow the thick ITO conductive film of one layer of general 100nm, then peel off and form gate electrode 2, as shown in Fig. 2 (b);
2) utilizing plasma enhanced chemical vapor deposition PECVD to grow the thick silicon dioxide layer of one layer of 100��180nm on gate electrode, then etching forms gate dielectric layer 3, as shown in Fig. 2 (c);
3) utilizing magnetron sputtering technique to grow the thick ITO conductive film material of one layer of 100nm on gate dielectric layer, then etching forms source electrode and drain electrode 4, as shown in Fig. 2 (d);
4) gluing alignment generates the figure of active area, utilizes sputtering technology one layer of IGZO metal oxide semiconductor films of growth, notes having regulated and controled partial pressure of oxygen in sputter procedure, and thickness 30nm, as shown in Fig. 2 (e);
5) consecutive deposition layer of metal Al material again, then peels off together, is formed with active layer 5 and the stack layer of metal cladding 6, as shown in Fig. 2 (f);
6) anneal in atmosphere, anneal 1 hour, temperature 300 DEG C so that be grown in the Al complete oxidation on active layer continuously and generate Al2O3, as passivation layer.
The I-V characteristic curve of the thin film transistor (TFT) that the present embodiment prepares, as it is shown on figure 3, wherein, Vg is gate voltage, and Id is leakage current. Fig. 3 is the test result contrasted before annealing and after annealing, it is straight line that the transfer characteristic curve that device presents before annealing is close to, there is no the characteristic of grid-control: after annealing, the transfer characteristic curve of device presents obvious grid-control characteristic, this is because the process annealed in atmosphere of Al cover layer is fully oxidized, meanwhile, this cover layer can serve as the role of passivation layer well.
It is finally noted that, the purpose publicizing and implementing example is in that help is further appreciated by the present invention, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, and various substitutions and modifications are all possible. Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope that the scope of protection of present invention defines with claims is as the criterion.
Claims (10)
1. a thin film transistor (TFT) with metal cladding, it is characterised in that described thin film transistor (TFT) includes: substrate, gate electrode, gate dielectric layer, source electrode, drain electrode, active layer and metal cladding; Wherein, described gate electrode is positioned at substrate; Described gate dielectric layer is positioned on gate electrode; Described source electrode and drain electrode are positioned on gate dielectric layer, and lay respectively at the both sides of gate dielectric layer; Described active layer covers gate dielectric layer, source electrode and drain electrode; Described metal cladding is grown on active layer continuously, is formed with the stack layer of active layer and metal cladding; Described metal cladding is the metal-oxide that metal anneal oxidation in atmosphere generates, as passivation layer.
2. thin film transistor (TFT) as claimed in claim 1, it is characterised in that described active layer adopts metal oxide semiconductor films.
3. thin film transistor (TFT) as claimed in claim 1, it is characterised in that described metal cladding adopts and can generate the metal material of metal-oxide by anneal oxidation in atmosphere, and thickness is between 5��10nm.
4. thin film transistor (TFT) as claimed in claim 1, it is characterised in that described metal cladding adopts aluminum Al or titanium Ti.
5. the preparation method of a thin film transistor (TFT) with metal cladding, it is characterised in that described preparation method comprises the following steps:
1) on substrate, puddle development generates the figure of gate electrode, deposits layer of transparent conductive film material, then peels off and forms gate electrode;
2) growing one layer of insulant on gate electrode, then etching forms gate dielectric layer;
3) growing layer of transparent conductive film material on gate dielectric layer, then etching forms source electrode and drain electrode;
4) gluing alignment generates the figure of active area, deposits layer of metal oxide semiconductor thin-film;
5) consecutive deposition layer of metal material again, then peels off together, is formed with the stack layer of active layer and metal cladding;
6) anneal in atmosphere, control time and the temperature of annealing so that be grown in the metal cladding complete oxidation on active layer continuously and generate metal-oxide, as passivation layer.
6. preparation method as claimed in claim 5, it is characterized in that, in step 4) in, the metal oxide semiconductor films of deposit adopts the one in the zno-based material of IGZO, ZTO, AZO, TiZO, HfZO, NiZO and GdAZO, adopting the preparation of rf magnetron sputtering technique to be formed, thickness is between 25��50nm.
7. preparation method as claimed in claim 5, it is characterised in that in step 5) in, metal material adopts the material being prone to anneal oxidation generation metal-oxide in atmosphere.
8. preparation method as claimed in claim 7, it is characterised in that described metal material adopts aluminum Al or titanium Ti.
9. preparation method as claimed in claim 5, it is characterised in that the thickness of described metal cladding is between 5��10nm.
10. preparation method as claimed in claim 5, it is characterised in that in step 6) in, the time of annealing, temperature was between 300��400 DEG C at 1��2 hour.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106756877A (en) * | 2016-12-13 | 2017-05-31 | 武汉华星光电技术有限公司 | C axles crystallization IGZO films and preparation method thereof |
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| US20070129473A1 (en) * | 2005-12-06 | 2007-06-07 | Shin Jung H | Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same |
| WO2007065363A1 (en) * | 2005-12-07 | 2007-06-14 | The University Of Hong Kong | Materials for organic thin film transistors |
| CN101976650A (en) * | 2010-10-09 | 2011-02-16 | 友达光电股份有限公司 | Thin film transistor and manufacture method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070129473A1 (en) * | 2005-12-06 | 2007-06-07 | Shin Jung H | Organic insulator composition, organic insulating film having the same, organic thin film transistor having the same and electronic device having the same and methods of forming the same |
| WO2007065363A1 (en) * | 2005-12-07 | 2007-06-14 | The University Of Hong Kong | Materials for organic thin film transistors |
| CN101976650A (en) * | 2010-10-09 | 2011-02-16 | 友达光电股份有限公司 | Thin film transistor and manufacture method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106756877A (en) * | 2016-12-13 | 2017-05-31 | 武汉华星光电技术有限公司 | C axles crystallization IGZO films and preparation method thereof |
| CN106756877B (en) * | 2016-12-13 | 2019-02-19 | 武汉华星光电技术有限公司 | C axis crystallizes IGZO film and preparation method thereof |
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Application publication date: 20160608 |