CN105633131B - A kind of substrate of semiconductor devices - Google Patents
A kind of substrate of semiconductor devices Download PDFInfo
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- CN105633131B CN105633131B CN201511033359.XA CN201511033359A CN105633131B CN 105633131 B CN105633131 B CN 105633131B CN 201511033359 A CN201511033359 A CN 201511033359A CN 105633131 B CN105633131 B CN 105633131B
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- Prior art keywords
- substrate
- semiconductor devices
- metal layer
- carborundum particle
- longest edge
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- 239000000758 substrate Substances 0.000 title claims abstract description 223
- 239000004065 semiconductor Substances 0.000 title claims abstract description 99
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 128
- 239000002245 particle Substances 0.000 claims abstract description 123
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 239000002994 raw material Substances 0.000 claims abstract description 28
- 238000005245 sintering Methods 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 14
- 229910052681 coesite Inorganic materials 0.000 claims description 13
- 229910052906 cristobalite Inorganic materials 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 229910052682 stishovite Inorganic materials 0.000 claims description 13
- 229910052905 tridymite Inorganic materials 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000011856 silicon-based particle Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 229960002050 hydrofluoric acid Drugs 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 33
- 230000000694 effects Effects 0.000 abstract description 28
- 239000010410 layer Substances 0.000 description 41
- 238000007493 shaping process Methods 0.000 description 15
- 238000012546 transfer Methods 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000002585 base Substances 0.000 description 10
- 230000000875 corresponding effect Effects 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000003763 carbonization Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000007792 addition Methods 0.000 description 4
- 239000012752 auxiliary agent Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 238000005261 decarburization Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- -1 silicon nitrides Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Abstract
The present invention relates to a kind of substrates of semiconductor devices, belong to technical field of semiconductors.In order to solve the problems, such as existing substrate weak heat-dissipating, a kind of substrate of semiconductor devices is provided, the substrate is made of the raw material comprising carborundum particle, and the length of the carborundum particle longest edge is greater than or equal to more than half of substrate maximum gauge.The substrate of this semiconductor devices can be such that a certain extent carborundum particle longest edge is arranged along the direction of substrate thickness, the trend and probability for increasing direction arrangement of the carborundum particle longest edge along substrate thickness, make it have high heat-conduction coefficient and good heat dissipation effect to reach.And it is physically and/or chemically handled by the surface to substrate and metal layer, the whole coefficient of heat conduction and heat dissipation effect of Lai Tigao substrate is set on surface.
Description
Technical field
The present invention relates to a kind of substrates of semiconductor devices, belong to technical field of semiconductors.
Background technique
Due to carbofrax material superior performance, High heat conduction material more and more is made and is applied to various machinery
Property part on, certainly, be also applied to the material of semiconductor apparatus assembly, such as be used for semiconductor devices baseplate material, it is existing
The substrate of semiconductor devices also have and be made using sic raw material through oversintering, with preferable heat-resisting quantity, still, by
It is fired in it and high density molding is more difficult, the sintering aid of selected mistake is generally added, therefore, is made of carbofrax material
Corresponding substrate, can guarantee its heat-resisting quantity and preferable mechanical performance, and heat dissipation performance cannot be played well.And in order to
Solve the problems, such as heat dissipation, the general ceramic material using aluminium nitride or silicon nitride etc. with high coefficient of thermal conductivity, alternatively, being to adopt
Guarantee heat dissipation performance with conductor-insulator-conductor interlayer structure.But carbofrax material is replaced still using above-mentioned material
So there are problems that more residual, for example, using ceramic materials such as aluminium nitride or silicon nitrides, though the coefficient of heat conduction is improved,
However, there are the mismatch of thermal expansion coefficient, the deficiency of mechanical strength and pyroconductivities in being used for semiconductor devices
Deficiency the problems such as；Using interlayer structure, since its structure is relatively complicated, essentially pyroconductivity is still very poor, very
Difficulty brings the performance of semiconductor devices into play, and the reliability of device can be made to reduce.For to sum up, since these substitute material
For material compared to for silicon carbide, the reasons such as advantage and easy production in price are more applied to half in actual use
On conductor device, this is truth；But using aluminium nitride or silicon nitride ceramic material in bad mechanical strength, and maximum problem
Being it is that sex differernce is very big with the thermal expansion of semiconductor devices made of silicon carbide, gallium nitride, gallic oxide etc. is used, and shadow
The performance for ringing semiconductor devices plays.
Summary of the invention
The present invention is directed to the above defect existing in the prior art, provides a kind of substrate of semiconductor devices, solution is asked
Topic is how to bring the performance of semiconductor devices to the maximum extent into play.
The purpose of the present invention is what is be achieved by the following technical programs, a kind of substrate of semiconductor devices, the base
Plate is made of the raw material comprising carborundum particle, and it is maximum thick that the length of the carborundum particle longest edge is greater than or equal to substrate
More than half of degree.
Since the substrate of existing semiconductor devices reduces the temperature of sintering in sinter molding and improves mouldability,
It is the additional addition of needs plus sintering aid or shaping assistant mostly to reach corresponding effect, and due to the crystal grain of carborundum particle
Smaller, the part that sintering aid or shaping assistant are wrapped in carborundum particle surface is more, to hinder carborundum particle
Between heat conduction efficiency, substantially reduce its heat dissipation performance.The present inventor passes through a large amount of experimental study, finds the original of substrate
Expect there is close relevance to heat-sinking capability between the length scale of carborundum particle longest edge and the thickness of substrate, passes through sieve
Choosing makes the length of all or part of carborundum particle longest edge in the half or more of substrate maximum gauge, in other words, makes to be carbonized
The length of silicon particle longest edge is greater than the half or more of substrate maximum gauge, can greatly improve the heat dissipation performance of substrate.
Why can be improved heat dissipation performance, find after study, be due to by increase carborundum particle longest edge length after,
It is when sintering substrate into, for statistical angle, carborundum particle longest edge can be made to a certain extent along base
The direction of plate thickness is arranged, and trend that carborundum particle longest edge is arranged along the direction of substrate thickness and general is increased
Rate；Certainly, the direction arrangement referred to herein along substrate thickness can be the surface of vertical substrate, be also possible to and substrate surface
Mode at an angle, to enable the heat on substrate to conduct along the longitudinal direction in carborundum particle, preferably
It distributes or passes, achieve the effect that improve the coefficient of heat conduction and heat dissipation performance；Meanwhile and due to by making carborundum particle
Longest edge be greater than or equal to substrate maximum gauge half or more than after, be equivalent to the size for improving carborundum particle,
Compared to using for the general carborundum particle compared with small particle, subtract the total number of particles amount within the substrate of same thickness
A few or even direct carborundum particle can run through the thickness of substrate, improve carborundum particle and carborundum particle it
Between heat conduction efficiency, reduce the hindering factor between carborundum particle crystal boundary, reduce because carborundum particle surface packet in
Influence of the other materials such as sintering aid to pyroconductivity reaches raising so that making the thermal diffusivity of substrate entirety has continuity
The effect of heat dissipation.The integral heat sink performance of the substrate of sic semiconductor device of the invention enough reach theoretical value 70% or with
On.Aforesaid substrate is for semiconductor devices such as silicon carbide, gallium nitride, gallium oxides.
The substrate of above-mentioned semiconductor device, preferably, the length of the carborundum particle longest edge is greater than or equal to base
The maximum gauge of plate.It can preferably realize the purpose for arranging carborundum particle along the direction of substrate thickness, in other words, energy
It is enough to improve the trend and probability that carbonization silicon grain longest edge arrange along substrate thickness direction, additionally it is possible to which that improving only need to a silicon carbide
Particle can be through the probability of the thickness of substrate, to more effectively improve the effect of thermal diffusivity.
The substrate of above-mentioned semiconductor device, the carborundum particle longest edge along substrate thickness direction in rule or not
It is regularly arranged.Carborundum particle long side mentioned here along substrate thickness direction queueing discipline or irregularly can be realized
The effect for improving heat dissipation performance is also possible to intersect and have the mode of certain tilt angle between the carborundum particle certainly
Arrangement.
The substrate of above-mentioned semiconductor device, preferably, the longest of the partially carbonized silicon particle in the carborundum particle
The length on side is greater than more than half of substrate maximum gauge, and the length of longest edge is greater than or equal to the half of substrate maximum gauge
Above carborundum particle accounts for 10% of total mass of raw material or more.Due to being all greater than or equal to base using the length of longest edge
The carborundum particle of more than half of plate maximum gauge is unfavorable for compacting and mouldability, influences the whole compactness of substrate.Pass through
Controlling the purpose of partial size passes through the content of preferred carborundum particle is the compactness in order to improve machinability and substrate, favorably
In the mechanical strength properties for guaranteeing substrate.As further optimization, it is maximum that the length of the longest edge is greater than or equal to substrate
The carborundum particle of more than half of thickness accounts for 45wt%~65wt% of total mass of raw material.
The substrate of above-mentioned semiconductor devices, preferably, also including sintering aid in the raw material.It is burnt by being added
Knot auxiliary agent can reduce sintering temperature, and since the carborundum particle that the present invention uses is relatively large, the sintering aid energy of addition
Enough gaps being more effectively filled between carborundum particle, are sintered together carborundum particle preferably, are conducive to improve
Whole compactness, to improve the integral heat sink effect of substrate.As a further preference, the quality of the sintering aid
The percentage for accounting for material quality is 0.03%~10%.By controlling the dosage of sintering aid and carborundum particle, can either reach
It can be reduced again with while improving cementability because sintering aid etc. is wrapped in the surface of carborundum particle to sintering temperature is reduced
Being formed influences caused by crystal boundary, achievees the effect that improve integral heat sink.
The substrate of above-mentioned semiconductor devices, preferably, the sintering aid is selected from Y2O3、MgO、Si、Al、B2O3、
Al2O3、B4C and SiO2One or more of.These auxiliary agents are conducive to subsequent processing, meanwhile, it is capable to reach reduction sintering temperature
Degree is integrated preferably sintering.As a further preference, the sintering aid at least contains Y2O3,
And the Y2O3The percentage for accounting for material quality is 0.1wt%~5.0wt%.Further preferred, the sintering aid is
Y2O3, Si and SiO2Mixture, and the Y2O3: Si:SiO2Mass ratio be 1:0.5~0.8:0.3~0.5.
The substrate of above-mentioned semiconductor devices refers to having already passed through the substrate obtained after sintering, preferably, the base
Plate surface is by physical treatment, chemical treatment or both mixed processing.Purpose is to remove substrate surface and hinder heat dissipation performance
Non- carborundum particle material, it is of course also possible to remove the carbofrax material of the relatively small particle of part, to realize that raising dissipates
The effect of heat.The non-carborundum particle shaping assistant such as used in sintering procedure therein or the sintering aid material of addition
Material.
The substrate of above-mentioned semiconductor devices, preferably, the physical treatment is specifically as follows through the table to substrate
Face is ground or using plasma method carries out.After milled processed, since silicon carbide hardness is very high, substrate
The materials such as the shaping assistant and sintering aid on surface can be removed, and the surface of carborundum particle is exposed to outside, and heat is direct
It is transferred out by carborundum particle to improve the coefficient of heat conduction and heat dissipation effect of substrate, naturally it is also possible to pass through polishing
Mode carries out the physical treatment mode such as polish.Above-mentioned plasma method can such as use nitrogen plasma, argon plasma
Method handles the surface of substrate.
The substrate of above-mentioned semiconductor devices, preferably, the chemical treatment is specifically by using hydrofluoric acid and nitre
One or more of mixing of hydroxide of the mixed liquor of acid, hydrochloric acid, the concentrated sulfuric acid and alkali metal are handled.Equally, it is therefore an objective to
In order to remove the shaping assistant and sintering aid of substrate surface, its obstruction to heat dissipation is reduced, the effect of heat dissipation is improved.The alkali
The hydroxide of metal preferably is selected from sodium hydroxide or potassium hydroxide.
The substrate of above-mentioned semiconductor devices, preferably, the upper surface and/or lower surface of the substrate are provided with metal
Layer.By the way that metal layer is arranged, the heat dissipation performance of substrate can be further increased.Certainly, the upper surface and/or lower surface of substrate can
Be part carry out metallization form metal layer, be also possible to all carry out metallization form metal layer.Above-mentioned metal layer can
By printing, being sprayed, be deposited, spraying plating or syringe picture retouches etc. and modes carry out metalized and formed.As further excellent
Choosing, the metal layer are selected from Ag metal layer, Cu metal layer, Ni metal layer or Au metal layer, Ti metal layer or Mo metal layer.Pass through
Silver layer is formed with subtle metal powder on the surface of the substrate, then is fired, to form corresponding metal layer, improves thermal diffusivity
The effect of energy.
In conclusion the invention has the following advantages that
1. the substrate of semiconductor devices of the invention is greater than substrate maximum gauge by using the length of silicon carbide longest edge
Half or more than carborundum particle as raw material, can make carborundum particle longest edge along substrate thickness to a certain extent
The direction of degree is arranged, and the trend and probability of direction arrangement of the carborundum particle longest edge along substrate thickness are increased, from
And reaches and make it have high heat-conduction coefficient and good heat dissipation effect.
2. the substrate of conductor device of the invention reduces firing by the way that sintering aid is added in carborundum particle raw material
Temperature；Carborundum particle is set preferably to bond together, to achieve the effect that improve the coefficient of heat conduction and heat dissipation.
3. the substrate of semiconductor devices of the invention, physically and/or chemically handled by the surface to substrate and
On surface, metal layer, the whole coefficient of heat conduction and heat dissipation effect of Lai Tigao substrate are set.
Figure of description
Fig. 1 is the schematic diagram of carborundum particle size distribution in the substrate of existing semiconductor devices.
Fig. 2 is the schematic diagram of carborundum particle size distribution in the substrate of semiconductor devices of the invention.
Fig. 3 is the upper surface of base plate of semiconductor devices of the invention and lower surface is metallized cuts open and show structural schematic diagram.
Fig. 4 is that the cuing open for upper surface of base plate metallization of semiconductor devices of the invention shows structural schematic diagram.
Fig. 5 is that the cuing open for base lower surface metallization of semiconductor devices of the invention shows structural schematic diagram.
Fig. 6 is another structural schematic diagram of the substrate of semiconductor devices of the invention.
In figure, 1, substrate；2, metal layer.
Specific embodiment
Below by specific embodiments and the drawings, the technical solutions of the present invention will be further described, but this
Invention is not limited to these examples.
As shown in Figure 2-5, the substrate 1 of semiconductor devices of the invention is made of the raw material comprising carborundum particle, carbon
The length of SiClx particle longest edge is greater than or equal to the half of 1 maximum gauge of substrate.This can increase carborundum particle longest edge
Along the trend and probability of the arrangement of 1 thickness direction of substrate, being not to say that have to can be vertically perpendicular to the surface of substrate 1,
It can be the mode with certain tilt angle to exist, so that the heat on substrate 1 be enable to make along in carborundum particle
The probability of longitudinal direction conduction increases, and reduces non-silicon carbide the particulate material such as sintering aid and molding between carborundum particle
The obstruction of the materials such as auxiliary agent influences, and polyvinyl alcohol, methyl can be used by improving heat transfer and heat dissipation performance, shaping assistant therein
N-propyl, n-BMA or glue etc..Meanwhile and due to by make carborundum particle longest edge be greater than or
Equal to 1 maximum gauge of substrate half or more than after, be equivalent to the size for improving carborundum particle, compare and use one
As relatively small particle carborundum particle for, reduce number of particles within the substrate 1 of same thickness or even one direct
Carborundum particle can run through the thickness of substrate, improve the heat conduction efficiency between carborundum particle and carborundum particle,
Reduce the hindering factor between carborundum particle interface, reduces because of the materials pair such as sintering aid in the packet of carborundum particle surface
The influence of heat transfer achievees the effect that improve heat dissipation so that making the thermal diffusivity of the entirety of substrate 1 has continuity.It is specific such as Fig. 1 and
Silicon carbide existing way in Fig. 2 can significantly find out that Fig. 1 is the existence form of carborundum particle in existing substrate, existing
Have plenty of and fired using the carborundum particle of smaller particle, for same thickness, increases carborundum particle and grain
Conduction between son hinders, and the sintering aid and shaping assistant for being wrapped in carborundum particle surface impact heat transfer, hinders
Hinder heat dissipation performance, and compared to raw material used by existing substrate, as shown in Fig. 2, the carbon in the substrate 1 of this semiconductor devices
SiClx particle increases carbonization by making more than half of the length of carborundum particle longest edge more than or equal to 1 thickness of substrate
Silicon particle longest edge along 1 thickness of substrate direction arrange trend and probability, to be more advantageous to heat in carborundum particle
Heat conduction reduces the influence of the sintering aid for being wrapped in carborundum particle surface and shaping assistant to heat transfer, reaches
Improve the effect of heat transfer and heat dissipation.Certainly, the existence form of the carborundum particle in Fig. 1 and Fig. 2, be for ease of description and
Made to schematically illustrate and non-limiting structure.In addition, the thickness of the substrate 1 as semiconductor devices can be according to institute
The semiconductor devices needed is adjusted, and the structure in figure is only one such mode, and non-restrictive structure.It is above-mentioned why
Statement using maximum gauge is since the shape of substrate 1 can directly be smooth structure type as shown in Figure 2-5, that phase
When the thickness for just referring to substrate 1 in maximum gauge, naturally it is also possible to it is to use to have reeded structure type as shown in Figure 6, that
It is equivalent to the thickness that maximum gauge refers to the part of maximum height in substrate 1.It is preferred that the part in the carborundum particle of use
The length of carborundum particle longest edge is greater than or equal to 1 maximum gauge half of substrate, and the length of longest edge is greater than or equal to base
The carborundum particle of 1 maximum gauge half of plate accounts for the 10wt% or more of total mass of raw material, remaining raw material can be longest edge
Length is less than the carborundum particle and sintering aid of 1 maximum gauge half of substrate, is conducive to improve molding compactness and entirety
Mechanical strength properties, preferably make longest edge length be greater than or equal to 1 maximum gauge half of substrate account for total mass of raw material
45wt%~65wt%.Certainly, the length of carborundum particle longest edge is preferably made to be greater than or equal to the maximum gauge of substrate 1.This
Further increase the trend and probability of direction arrangement of the carborundum particle longest edge along 1 thickness of substrate.As optimal case,
The carborundum particle that the length of longest edge is greater than or equal to 1 maximum gauge half of substrate in raw material therein accounts for total mass of raw material
45wt%~65wt%, preferably 50wt%, sintering aid 0.1wt%~5.0wt%, remaining is less than base for the length of longest edge
The carborundum particle of 1 maximum gauge half of plate.
Preferably, also containing sintering aid in above-mentioned raw material, the quality of sintering aid is preferably made to account for material quality
Percentage is 0.03%~10%.By the way that sintering aid is added, in order to reduce sintering temperature and make carborundum particle more
Good bonds together, and improves whole heat dissipation performance.Sintering aid can use Y2O3、MgO、Si、Al、B2O3、Al2O3、B4C
And SiO2One or more of.Preferably with sintering aid at least contain Y2O3, and Y2O3Account for the percentage of total mass of raw material
Number is 0.1wt%~5.0wt%, it is preferable that is 3.0wt%.Most preferably, the sintering aid used is Y2O3, Si and SiO2Mixing
Object, and the Y2O3: Si:SiO2Mass ratio be 1:0.5~0.8:0.3~0.5.The mode of sintering can for it is normal pressure-sintered, plus
The modes such as pressure sintering or isostatic sintering.
In order to preferably promote the integral heat sink performance of substrate 1,1 surface of substrate of this semiconductor devices is by physics
Reason, chemical treatment or both mixed processing.Purpose is the non-carborundum particle raw material in order to remove surface, improves heat dissipation performance,
Certainly, the partially carbonized silicon ingredient on surface may be removed in treatment process simultaneously, but has no effect on main performance.Object therein
Reason processing can be ground by the surface to substrate 1.Polishing is such as carried out using sand milling and achievees the effect that grinding, it can also
It polishes, can also be carried out using the surface of the methods of nitrogen plasma, argon plasma to substrate 1 in a manner of through polishing
Processing.Chemical treatment therein specifically can be by using the hydroxide of hydrofluoric acid, nitric acid, hydrochloric acid, the concentrated sulfuric acid and alkali metal
One or more of mixing the surface of substrate 1 is handled.Physical treatment is used of course, it is possible to combine according to actual needs
With the chemically treated mode of use.Wherein the hydroxide of alkali metal is selected from sodium hydroxide or potassium hydroxide.Using alkali metal
Generally make substrate 1 in corresponding lye when hydroxide is chemically treated and in 80 DEG C~400 DEG C high-temperature process.
In order to preferably promote the integral heat sink performance of substrate 1, it is also beneficial to subsequent bonding, pressure knot or Welder
Skill can also be provided with metal layer 2 in the upper surface in whole or in part of substrate 1 and/or lower surface.Metal layer has thermal diffusivity
It is good, further improve heat dissipation effect.It is preferred that metal layer 2 therein can use Ag metal layer, Cu metal layer, Ni metal
Layer, Au metal layer, Ti metal layer, W metal layer or Mo metal layer.As in Figure 3-5, metal layer 2 can be in the upper of substrate
Surface and lower surface are respectively provided with, and metal layer 2 only can also be arranged in upper surface or lower surface, can also be only in the upper surface of part
Or metal layer 2 is set on lower surface.
The thickness of the substrate 1 for the semiconductor devices that following embodiment is selected is all made of the sic semiconductor device of 0.3mm
Substrate on the basis of, certainly, this thickness can select the substrate 1 of arbitrary dimension according to actual needs, and the present embodiment is why
Using 300 μm of (0.3mm) thickness merely to preferably description, is not intended to specifically limit, semiconductor devices therein
It can be made of silicon carbide, gallium nitride or gallium oxide etc..
Theoretical value below refers to the coefficient of heat conduction of 4H monocrystalline silicon carbide, coefficient of heat conduction 490W/mK.
Embodiment 1
The carborundum crystals produced using existing Acheson's method are selected to carry out comminuting method by colliding, and with main point
It is that condition carries out collision crushing that cloth, which is 320 μm, obtains carborundum particle.Then, the sieve for the use of grid diagonal line length being 320 μm
It is screened, the carborundum particle by longest edge in 320 μm or more sizes removes, then by the longest edge fallen at 320 μm or less
Carborundum particle the use of grid diagonal line length is that 280 μm of sieve is screened, obtain longest edge at 280 μm~320 μm
Carborundum particle.
The substrate 1 of this semiconductor devices is made of the raw material comprising carborundum particle, the length of carborundum particle longest edge
Degree is greater than the half of substrate thickness, specifically uses carborundum particle of the longest edge at 280 μm~320 μm.
The substrate 1 can be sintered using following methods:
By making longest edge after 280 μm~320 μm of carborundum particle and shaping assistant aqueous solution be sufficiently kneaded,
It is dry after being granulated by pelletizer, then punch forming is carried out by general press machine, stamping forming substrate is put into
In sintering furnace, after then carrying out carbonization treatment in oxidizing atmosphere, vacuumizes, in inert atmosphere and control temperature 1750
It is sintered under conditions of DEG C, obtains the substrate 1 of corresponding semiconductor devices.
The substrate 1 of semiconductor devices obtained above is placed on common thermal conductivity detector (TCD) to be measured, the heat of substrate 1
The coefficient of conductivity can reach the 75% of theoretical value.
Embodiment 2
Selecting makes opposite silicon carbide by high pressure gas using the carborundum crystals that existing Acheson's method produces
The method crushed is collided mutually, and is distributed as 320 μm with master and carries out collision crushing for condition, obtains carborundum particle.
Then, the use of grid diagonal line length is that 320 μm of sieve is screened, by longest edge 320 μm or more sizes carbonization silicon grain
Son removal, then by the longest edge fallen 320 μm of carborundum particles below using grid diagonal line length be 280 μm sieve into
Row screening obtains carborundum particle of the longest edge at 280 μm~320 μm.
The substrate 1 of this semiconductor devices is made comprising the raw material of carborundum particle and sintering aid, carborundum particle longest
The length on side is greater than the half of 1 thickness of substrate, carborundum particle of the longest edge at 280 μm~320 μm is specifically used, wherein being sintered
The percentage that auxiliary agent accounts for total mass of raw material is 0.5wt%.
The substrate 1 can be fired using following methods:
Specifically can by making longest edge after 280 μm~320 μm of carborundum particle and sintering aid is mixed, then
It is carried out after being sufficiently kneaded with mass concentration for the shaping assistant polyvinyl alcohol water solution of 3wt%, is made by pelletizer
It is dry after grain, then punch forming is carried out by general press machine, stamping forming substrate is put into sintering furnace, is then existed
It after carrying out carbonization treatment in oxidizing atmosphere, vacuumizes, in inert atmosphere and controls temperature and carried out under conditions of 1750 DEG C
Firing processing, obtains the substrate 1 of corresponding semiconductor devices.
The substrate 1 of semiconductor devices obtained above is placed on common thermal conductivity detector (TCD) to be measured, the heat of substrate 1
The coefficient of conductivity can reach the 70% of theoretical value.
Embodiment 3
The substrate 1 and embodiment 1 of the semiconductor devices of the present embodiment are consistent, and difference is only that, uses the surface of substrate 1
The mixed liquor of hydrofluoric acid and nitric acid is handled.Purpose is to reach raising heat to remove the remaining shaping assistant of substrate surface
The effect of the coefficient of conductivity and heat dissipation.
The substrate 1 of obtained semiconductor devices is placed on common thermal conductivity detector (TCD) to be measured, the heat transfer of substrate 1
Coefficient can reach the 83% of theoretical value.
Embodiment 4
The substrate 1 and embodiment 2 of the semiconductor devices of the present embodiment are consistent, and difference is only that, uses the surface of substrate 1
The mixed liquor of hydrofluoric acid and nitric acid is handled.Purpose is to remove 1 surface of substrate and sintering aid and remaining molding and help
Agent achievees the effect that improve the coefficient of heat conduction and heat dissipation.
The substrate 1 of semiconductor devices obtained above is placed on common thermal conductivity detector (TCD) to be measured, the heat of substrate 1
The coefficient of conductivity can reach the 80% of theoretical value.
Embodiment 5
The substrate 1 of the semiconductor devices of the present embodiment and embodiment 4 are consistent, and difference is only that, make substrate 1 upper surface and
Lower surface is provided with metal layer 2.Achieve the effect that improve the coefficient of heat conduction and heat dissipation.Above-mentioned metal layer 2 passes through printing, spray
Vapor deposition, spraying plating or syringe draw the mode retouched and carry out metalized and formed.
The substrate 1 of obtained semiconductor devices is placed on common thermal conductivity detector (TCD) to be measured, the heat transfer of substrate 1
Coefficient can reach the 85% of theoretical value.
Embodiment 6
The substrate 1 and embodiment 2 of the semiconductor devices of the present embodiment are consistent, and difference is only that, wherein sintering aid accounts for original
The percentage for expecting gross mass is 0.03wt%, and sintering aid is metallic silicon or metallic aluminium.
The substrate 1 of obtained semiconductor devices is placed on common thermal conductivity detector (TCD) to be measured, the heat transfer of substrate 1
Coefficient can reach 72% of theoretical value or more.
Embodiment 7
The substrate 1 and embodiment 2 of the semiconductor devices of the present embodiment are consistent, and difference is only that, wherein sintering aid accounts for original
The percentage for expecting gross mass is 10wt%, and sintering aid is Y2O3。
The substrate 1 of obtained sic semiconductor device is placed on common thermal conductivity detector (TCD) to be measured, substrate 1
The coefficient of heat conduction can reach 73% of theoretical value or more.
Embodiment 8
The substrate 1 and embodiment 2 of the semiconductor devices of the present embodiment are consistent, and difference is only that, wherein sintering aid accounts for original
The percentage for expecting gross mass is 5.0wt%, and sintering aid is Y2O3With the mixture of metallic silicon, and Y2O3Account for material quality
3.5wt%, metallic silicon account for the 1.5wt% of material quality.
The substrate 1 of obtained semiconductor devices is placed on common thermal conductivity detector (TCD) to be measured, the heat transfer of substrate 1
Coefficient can reach the 74% of theoretical value.
Embodiment 9
The substrate 1 and embodiment 2 of the semiconductor devices of the present embodiment are consistent, and difference is only that, wherein sintering aid accounts for original
The percentage for expecting gross mass is 8wt%, and sintering aid is Y2O3, Si and SiO2Mixture, and the Y2O3: Si:SiO2's
Mass ratio is 1:0.5:0.3.
The substrate 1 of obtained semiconductor devices is placed on common thermal conductivity detector (TCD) to be measured, the heat transfer of substrate 1
Coefficient can reach the 78% of theoretical value.
Embodiment 10
The substrate 1 and embodiment 2 of the semiconductor devices of the present embodiment are consistent, and difference is only that, wherein sintering aid accounts for original
The percentage for expecting gross mass is 8wt%, and sintering aid is Y2O3, Si and SiO2Mixture, and the Y2O3: Si:SiO2's
Mass ratio is 1:0.8:0.5.
The substrate 1 of obtained semiconductor devices is placed on common thermal conductivity detector (TCD) to be measured, the heat transfer of substrate 1
Coefficient can reach the 72% of theoretical value.
Embodiment 11
The substrate 1 and embodiment 5 of the semiconductor devices of the present embodiment are consistent, and difference is only that, wherein sintering aid accounts for original
The percentage for expecting gross mass is 1.0wt%, and sintering aid is B2O3。
The substrate 1 of obtained semiconductor devices is placed on common thermal conductivity detector (TCD) to be measured, the heat transfer of substrate 1
Coefficient can reach the 88% of theoretical value.
Embodiment 12
The carborundum crystals produced using existing Acheson's method are selected to carry out comminuting method by colliding, and with main point
It is that condition carries out collision crushing that cloth, which is 400 μm, obtains carborundum particle.Then, the sieve for the use of grid diagonal line length being 400 μm
It is screened, the carborundum particle by longest edge in 400 μm or more sizes removes, then by the longest edge fallen at 400 μm or less
Carborundum particle the use of grid diagonal line length is that 350 μm of sieve is screened, obtain longest edge at 350 μm~400 μm
Carborundum particle.
The substrate 1 of this semiconductor devices includes that the raw material of carborundum particle is made, and the length of carborundum particle longest edge is big
In 1 thickness of substrate, carborundum particle of the longest edge at 350 μm~400 μm is specifically used.
The substrate 1 can be fired using following methods:
By make longest edge 350 μm~400 μm carborundum particle and mass concentration 3wt% methacrylic acid just
Propyl ester aqueous solution carries out after being sufficiently kneaded, dry after being granulated by pelletizer, then carries out punching press by general press machine
Molding, stamping forming substrate is put into sintering furnace, stamping forming substrate is put into sintering furnace, then in oxidizing atmosphere
After middle carry out carbonization treatment, in inert atmosphere and controls temperature and be fired processing under conditions of 1750 DEG C, obtain phase
The substrate 1 for the semiconductor devices answered.
The substrate 1 of semiconductor devices obtained above is placed on common thermal conductivity detector (TCD) to be measured, the heat of substrate 1
The coefficient of conductivity can reach the 85% of theoretical value.
Embodiment 13
The carborundum crystals produced using existing Acheson's method are selected to carry out comminuting method by colliding, and with main point
It is that condition carries out collision crushing that cloth, which is 400 μm, obtains carborundum particle.Then, the sieve for the use of grid diagonal line length being 400 μm
It is screened, the carborundum particle by longest edge in 400 μm or more sizes removes, then by the longest edge fallen at 400 μm or less
Carborundum particle the use of grid diagonal line length is that 350 μm of sieve is screened, obtain longest edge at 350 μm~400 μm
Carborundum particle.
The substrate 1 of this semiconductor devices is made comprising the raw material of carborundum particle and sintering aid metallic silicon, and be carbonized silicon grain
The length of sub- longest edge is greater than 1 thickness of substrate, specifically uses carborundum particle of the longest edge at 350 μm~400 μm, wherein gold
Belonging to silicon to account for the percentage of total mass of raw material is 1.5wt%.
The substrate can be fired using following methods:
By making longest edge after 350 μm~400 μm of carborundum particle and metallic silicon is mixed, then by itself and quality
The shaping assistant aqueous solution that concentration is 3wt% carries out after being sufficiently kneaded, dry after being granulated by pelletizer, then passes through one
As press machine carry out punch forming, stamping forming substrate is put into sintering furnace, decarburization is then carried out in oxidizing atmosphere
After processing, in inert atmosphere and controls temperature and be fired processing under conditions of 1750 DEG C, obtain corresponding semiconductor
The substrate 1 of device.
The substrate 1 of semiconductor devices obtained above is placed on common thermal conductivity detector (TCD) to be measured, the heat of substrate 1
The coefficient of conductivity can reach the 80% of theoretical value.
Embodiment 14
The substrate 1 and embodiment 12 of the semiconductor devices of the present embodiment are consistent, and difference is only that, adopts the surface of substrate 1
It is handled with the mixed liquor of hydrofluoric acid and nitric acid.Purpose is to reach raising to remove the shaping assistant remained on surface of substrate 1
The effect of the coefficient of heat conduction and heat dissipation.
The substrate 1 of obtained semiconductor devices is placed on common thermal conductivity detector (TCD) to be measured, the heat transfer of substrate 1
Coefficient can reach the 90% of theoretical value.
Embodiment 15
The substrate 1 and embodiment 13 of the semiconductor devices of the present embodiment are consistent, and difference is only that, adopts the surface of substrate 1
It is handled with the mode of grinding, grinding process is such as carried out using sand paper or is processed by shot blasting or uses at nitrogen plasma
Reason.Purpose is to reach to remove 1 surface of substrate and sintering aid and remaining shaping assistant and improve the coefficient of heat conduction and heat dissipation
Effect.
The substrate 1 of semiconductor devices obtained above is placed on common thermal conductivity detector (TCD) to be measured, the heat of substrate 1
The coefficient of conductivity can reach the 87% of theoretical value.
Embodiment 16
The substrate 1 and embodiment 13 of the semiconductor devices of the present embodiment are consistent, and difference is only that, uses the surface of substrate
Sodium hydroxide or potassium hydroxide solution are in 100 DEG C~400 DEG C high-temperature process.Purpose is to remove 1 surface of substrate and sintering and help
Agent and remaining shaping assistant achieve the effect that improve the coefficient of heat conduction and heat dissipation.
The substrate 1 of semiconductor devices obtained above is placed on common thermal conductivity detector (TCD) to be measured, the heat of substrate 1
The coefficient of conductivity can reach the 88% of theoretical value.
Embodiment 17
The substrate 1 of the semiconductor devices of the present embodiment and embodiment 15 are consistent, and difference is only that, the upper surface of substrate 1 and
Lower surface is provided with metal layer 2, specifically uses silver metal layer.Achieve the effect that improve the coefficient of heat conduction and heat dissipation.Above-mentioned
Silver metal layer carries out metalized by way of printing, steaming plating, spraying plating or syringe picture and retouch and is formed, and can also pass through
Make silver powder covering on the surface of the substrate, the silver metal layer being shaped to is handled using firing.
The substrate 1 of obtained semiconductor devices is placed on common thermal conductivity detector (TCD) to be measured, the heat transfer of substrate 1
Coefficient can reach the 95% of theoretical value.
Certainly, above silver metal layer can use Au metal layer, Ni metal layer, Cu metal layer, Al metal layer, W metal
Layer, Ti metal layer or Mo metal layer replace, and are equally reached essentially identical effect.
Specific embodiment described in the present invention only illustrate the spirit of the present invention by way of example.The neck of technology belonging to the present invention
The technical staff in domain can make various modifications or additions to the described embodiments or replace by a similar method
In generation, however, it does not deviate from the spirit of the invention or beyond the scope of the appended claims.
It is skilled to this field although present invention has been described in detail and some specific embodiments have been cited
For technical staff, as long as it is obvious for can making various changes or correct without departing from the spirit and scope of the present invention.
Claims (15)
1. a kind of substrate of semiconductor devices, the substrate (1) is made of the raw material comprising carborundum particle, and feature exists
In the length of the carborundum particle longest edge is greater than or equal to the half of substrate (1) maximum gauge, also contains in the raw material
Sintering aid, and the substrate (1) is formed through oversintering.
2. the substrate of semiconductor devices according to claim 1, which is characterized in that the length of the carborundum particle longest edge
More than or equal to the maximum gauge of substrate (1).
3. the substrate of semiconductor devices according to claim 1, which is characterized in that partially carbonized in the carborundum particle
The length of silicon particle longest edge is greater than or equal to substrate (1) maximum gauge half, and the length of longest edge is greater than or equal to substrate
(1) carborundum particle of maximum gauge half accounts for the 10wt% or more of total mass of raw material.
4. the substrate of semiconductor devices according to claim 1, which is characterized in that the sintering aid is selected from Y2O3、MgO、
Si、Al、B2O3、Al2O3、B4C and SiO2One or more of.
5. the substrate of semiconductor devices according to claim 1, which is characterized in that the quality of the sintering aid accounts for raw material matter
The percentage of amount is 0.03%~10%.
6. the substrate of semiconductor devices according to claim 4, which is characterized in that the sintering aid at least contains Y2O3, and
The Y2O3The percentage for accounting for material quality is 0.1wt%~5.0wt%.
7. the substrate of semiconductor devices according to claim 6, which is characterized in that the sintering aid is Y2O3, Si and SiO2
Mixture, and the Y2O3: Si:SiO2Mass ratio be 1:0.5~0.8:0.3~0.5.
8. the substrate of semiconductor devices described in -7 any one according to claim 1, which is characterized in that substrate (1) surface
By physical treatment, chemical treatment or both mixed processing.
9. the substrate of semiconductor devices according to claim 8, which is characterized in that the physical treatment is specially to substrate
(1) surface is ground or using plasma method is handled.
10. the substrate of semiconductor devices according to claim 8, which is characterized in that the chemical treatment is specially to use hydrogen
One or more of fluoric acid, nitric acid, hydrochloric acid, the concentrated sulfuric acid and hydroxide of alkali metal, which mix, carries out the surface of substrate (1)
Processing.
11. the substrate of semiconductor devices according to claim 10, which is characterized in that the hydroxide of the alkali metal is selected from
Sodium hydroxide or potassium hydroxide.
12. the substrate of semiconductor devices described in -7 any one according to claim 1, which is characterized in that the substrate (1) it is whole
Body or portion of upper surface and/or lower surface are provided with metal layer (2).
13. the substrate of semiconductor devices according to claim 8, which is characterized in that the substrate (1) in whole or in part on
Surface and/or lower surface are provided with metal layer (2).
14. the substrate of semiconductor devices according to claim 12, which is characterized in that the metal layer (2) is selected from Ag metal
Layer, Cu metal layer, Ni metal layer, Au metal layer, W metal layer, Ti metal layer or Mo metal layer.
15. the substrate of 3 semiconductor devices according to claim 1, which is characterized in that the metal layer (2) is selected from Ag metal
Layer, Cu metal layer, Ni metal layer, Au metal layer, W metal layer, Ti metal layer or Mo metal layer.
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