CN105632970A - Air inlet system and semiconductor processing device - Google Patents
Air inlet system and semiconductor processing device Download PDFInfo
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- CN105632970A CN105632970A CN201410639810.1A CN201410639810A CN105632970A CN 105632970 A CN105632970 A CN 105632970A CN 201410639810 A CN201410639810 A CN 201410639810A CN 105632970 A CN105632970 A CN 105632970A
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Abstract
The invention provides an air inlet system and a semiconductor processing device. The system comprises a first air path for conveying unsaturated vapor, a second air path for conveying saturated vapor, a third air path connecting with a reaction cavity, and a buffer container; the buffer container comprises multiple air inlets and one air outlet, wherein the multiple air inlets are located at the same side of the buffer container, and the air outlet is located at the opposite side of the multiple air inlet side on the buffer container; the diameter of the buffer container is larger than the diameter of each air inlet; the first air path and the second air path are parallel to each other and are connected with the air inlets correspondingly; the third air path is connected with the air outlet. The provided air inlet system has no influence on maximum flow of conveyed gas; by use of the system, the offset function on saturated vapor because the saturated vapor has larger air pressure than that of the unsaturated vapor during the mixing process of the two vapors is avoided so that normal air inlet of multiple air paths is guaranteed.
Description
Technical field
The present invention relates to microelectronics technology, in particular it relates to a kind of gas handling system and half
Conductor process equipment.
Background technology
It is being used for manufacturing in integrated circuit (IC) or the semiconductor processing equipment of MEMS, typically require and the mixing of kinds of processes gas is passed into processing chamber, such as, inductively coupled plasma (ICP) process equipment just belongs to by commonly used one, this equipment is usually and the mixing gas including multiple gases excites the substantial amounts of electronics of formation, ion, excited atom, molecule and free radical isoreactivity particle, there are various physical and chemical reactions in these active particles with substrate, so that substrate surface performance changes, to reach deposition or the purpose of etching.
For the process gas of this kind equipment, generally the class gas being gaseous state at normal temperatures is called unsaturation steam class gas, for instance N2, Cl2, O2, CF4, He etc., this kind of gas generally can be fed directly in processing chamber; It is called saturated vapor class gas, for instance SiCl by being slightly less than a class gas of room temperature for liquid or boiling point at normal temperatures4, BCl3Deng, this kind of gas is stored in steel cylinder generally in liquid form, and is formed over saturated vapor at its liquid, and when needs air inlet, the saturated vapor in steel cylinder can be delivered in reaction chamber by pipeline. But, owing to arising that liquefaction phenomenon time this saturated vapor class gas temperature in the duct is slightly lower or pressure is bigger than normal, so that be all coated with one layer of heater in source of the gas and the conveyance conduit periphery of saturated vapor class gas, in order to keep the temperature of source of the gas and conveyance conduit. It follows that for unsaturation steam class gas, it is necessary to the pipeline with heater is individually carried, and enters processing chamber in distance processing chamber a distance together with after the mixing of saturated vapor class gas.
Fig. 1 is the gas circuit schematic diagram of existing a kind of gas handling system. As it is shown in figure 1, with by three kinds of unsaturation steam gas (N2, Cl2, and CF4) and a kind of saturated vapor gas (SiCl4) to pass into processing chamber be example in mixing, three kinds of unsaturation steam gas, after steel cylinder flows out, arrive the mixing of threeway X place through respective transfer pipeline (A1, A2 and A3), mixing gas by pipeline A towards processing chamber conveying; Meanwhile, saturated vapor gas is individually carried by the pipeline B with heater; Unsaturation steam gas and saturated vapor gas mix at threeway Y place, and mixing gas is delivered in processing chamber 1 by pipeline C.
But, above-mentioned gas handling system occur the problem that owing in the pressure ratio pipeline A of steam gas saturated in pipeline B, the pressure of the mixing gas of unsaturation steam gas is much smaller in actual applications, this makes saturated steam gas impact of the meeting offset effect because being subject to unsaturation steam gas in A pipeline when arriving threeway Y place entrance pipeline C in pipeline B, and cause that the flow velocity actually entering the saturated vapor gas in pipeline C reduces or stop flowing, time even even more serious, unsaturation steam gas in pipeline A can pour in down a chimney to the gas cylinder of saturated vapor gas by B by the road, form A-Y-B stream.
For this, a kind of solution is as follows: as shown in Figure 2, on pipeline A, a current limliting pad D is set up in the upstream of threeway Y, in order to reduce the pressure of the mixing gas of unsaturation steam gas therethrough, so that saturated vapor gas can pass through the mixing gas mixing of threeway Y and unsaturation steam gas. But, still can there is problems in that in actual applications
One, as shown in Figure 3, owing to pipeline A and pipeline B is mutually perpendicular to, this makes the saturated vapor gas in pipeline B and the perpendicular intake method mixing intersected at threeway Y place of the mixing gas of the unsaturation steam gas in pipeline A, when this intake method air pressure in pipeline A is significantly greater than the air pressure in pipeline B, it is easy for the offset effect producing the gas in above-mentioned pipeline A to the gas in pipeline B, again owing to current limliting pad D reduces the limited use of gas pressure, when its flow in pipeline A is very big, it is still unavoidable from the generation of above-mentioned offset effect, thus causing the pressure instability of saturated steam gas in pipeline B and gas flow to reduce, the actual flow causing saturated vapor gas is not inconsistent with setting flow. and the pressure instability of saturated vapor gas also can affect the uniformity of gas mixing, so that process results is affected.
Its two, above-mentioned current limliting pad D has the maximum effect by flow limiting gas, i.e. being thus equivalent to define the maximum stream flow of the mixing gas of unsaturation steam gas, the window of testing and measuring technology is also disadvantageous by this.
Summary of the invention
It is contemplated that at least solve one of technical problem of existence in prior art, propose a kind of gas handling system and semiconductor processing equipment, the maximum stream flow of conveying gas is not only affected by it, but also can avoid when saturated vapor gas is with the mixing gas mixing of unsaturation steam gas, because of the offset effect that saturated vapor gas is produced by the former air pressure more than the air pressure of the latter, thereby may be ensured that the normal air inlet of multipath gas.
A kind of gas handling system is provided for realizing the purpose of the present invention, including for carrying the first gas circuit of unsaturation steam gas, for the second gas circuit carrying saturated vapor gas and the 3rd gas circuit being connected with reaction chamber, also include buffer container, described buffer container includes multiple air inlet and a gas outlet, the plurality of air inlet is respectively positioned on the same side of described buffer container, and described gas outlet is positioned at the opposite side that described buffer container is relative with each air inlet side; Further, the diameter of described buffer container is more than the diameter of each air inlet; Described first gas circuit and the second gas circuit are parallel to each other, and are connected with each air inlet correspondingly; Described 3rd gas circuit is connected with described gas outlet.
Preferably, the plurality of air inlet is symmetrical relative to the longitudinal center line of described buffer container.
Preferably, radial distance is described buffer container radius 1/2nd or 1/3rd or 2/3rds between longitudinal center line and the longitudinal center line of described buffer container of each air inlet.
Preferably, the span of the ratio between diameter and the diameter of each described air inlet of described buffer container is at 5:1��20:1.
Preferably, the span of the ratio between axial length and its diameter of described buffer container is at 1:1��3:1.
Preferably, the quantity of described second gas circuit is a road or the multichannel being parallel to each other, and the second gas circuit described in multichannel is for carrying different saturated vapor gas respectively; Described first gas circuit and Ge Lu the second gas circuit are distributed relative to the axisymmetrical of described buffer container.
Preferably, the span of the length of described 3rd gas circuit is at 0.5��2m.
Preferably, described first gas circuit, the second gas circuit, buffer container and the 3rd gas circuit are respectively provided with pressure-display device.
As another technical scheme, the present invention also provides for a kind of semiconductor processing equipment, and including processing chamber with for providing the gas handling system of process gas to described processing chamber, described gas handling system have employed above-mentioned gas handling system provided by the invention.
The method have the advantages that
Gas handling system provided by the invention, it is by being used in the first gas circuit of conveying unsaturation steam gas and for carrying the second gas circuit of saturated vapor gas to be parallel to each other, and each air inlet being positioned at the same side correspondingly with buffer container is connected, the unsaturation steam gas in the first gas circuit and the saturated vapor gas in the second gas circuit can be realized adopt the mode of parallel feed to flow in buffer container to be mutually mixed, this reduces the risk of offset mutually between the gas of different gas circuit, and owing to the diameter of buffer container is more than the diameter of each air inlet, gas in the gas circuit of each road is when each air inlet that diameter is less abruptly enters in the buffer container being relatively large in diameter, the pressure of gas can decline rapidly, thus saturated vapor gas would not be produced offset effect by unsaturation steam gas in the buffer container that pressure is relatively low, and then can ensure that the normal air inlet of multipath gas. meanwhile, the maximum stream flow of conveying gas, by above-mentioned buffer container, is not only affected, it is also possible to improve the mixing uniformity of gas with various, thus being conducive to the optimization of process results by gas handling system provided by the invention.
Semiconductor processing equipment provided by the invention, it is by adopting above-mentioned gas handling system provided by the invention, the maximum stream flow of conveying gas is not only affected by it, but also can avoid when saturated vapor gas mixes with unsaturation steam gas, because of the offset effect that saturated vapor gas is produced by the former air pressure more than the air pressure of the latter, thereby may be ensured that the normal air inlet of multipath gas.
Accompanying drawing explanation
Fig. 1 is the gas circuit schematic diagram of existing a kind of gas handling system;
Fig. 2 is the gas circuit schematic diagram of existing another kind of gas handling system;
Fig. 3 is the gas flow figure in Fig. 2 in threeway Y;
The gas circuit schematic diagram of the gas handling system that Fig. 4 provides for the embodiment of the present invention;
Fig. 5 A is the structural representation of the buffer container that the present embodiment adopts;
Fig. 5 B is the side view of the air inlet side of the buffer container in Fig. 5 A; And
Fig. 6 is the schematic diagram of the arrangement mode of the air inlet of varying number.
Detailed description of the invention
For making those skilled in the art be more fully understood that technical scheme, below in conjunction with accompanying drawing, gas handling system provided by the invention and semiconductor processing equipment are described in detail.
Firstly the need of illustrating, generally the class gas being gaseous state at normal temperatures is called unsaturation steam class gas, for instance N2, Cl2, O2, CF4, He etc., this kind of gas generally can be fed directly in processing chamber; It is called saturated vapor class gas, for instance SiCl by being slightly less than a class gas of room temperature for liquid or boiling point at normal temperatures4, BCl3Deng, this kind of gas is stored in steel cylinder generally in liquid form, and is formed over saturated vapor at its liquid, and when needs air inlet, the saturated vapor in steel cylinder can be delivered in reaction chamber by pipeline.
The gas circuit schematic diagram of the gas handling system that Fig. 4 provides for the embodiment of the present invention. Referring to Fig. 4, this gas handling system is for carrying process gas to processing chamber 10, in the present embodiment, so that three kinds of unsaturation steam gas and a kind of saturated vapor gas mixing are passed into processing chamber 10 and technical scheme is illustrated. Specifically, gas handling system includes three tunnel branches (11,12,13), first gas circuit the 31, second gas circuit 21, buffer container D and the three gas circuit 32. Wherein, three tunnel branches (11,12,13) are parallel with one another, and connect with the first gas circuit 31, and each road branch is for carrying different unsaturation steam gas respectively. Three kinds of unsaturation steam gas, after steel cylinder flows out, are mutually mixed to the first gas circuit 31 through respective bifurcated flow, form the mixing gas of unsaturation steam gas, then are delivered in buffer container 30 by the first gas circuit 31. Meanwhile, the second gas circuit 21 is for being delivered to saturated vapor gas in buffer container 30, and is mutually mixed with the mixing gas of the unsaturation steam gas being delivered in buffer container 30 by the first gas circuit 31; 3rd gas circuit 32 is connected with processing chamber 10, in order to by from the mixed gas delivery of buffer container 30 to processing chamber 10.
Fig. 5 A is the structural representation of the buffer container that the present embodiment adopts. Fig. 5 B is the side view of the air inlet side of the buffer container in Fig. 5 A. Seeing also Fig. 5 A and Fig. 5 B, in the present embodiment, buffer container 30 is cylinder, and this is cylindrical axially consistent with the direction of each road gas circuit conveying gas. And, the diameter D of buffer container 30 is more than the diameter d of each road gas circuit, and include two air inlets (301,302) and one gas outlet (not shown), wherein, two air inlets (301,302) are respectively positioned on the same side of buffer container 30, that is, the front side of buffer container 30; Gas outlet is positioned at the opposite side that buffer container is relative with each air inlet side, i.e. the rear side of buffer container 30. Meanwhile, the first gas circuit 21 and the second gas circuit 31 are parallel to each other, and connect with two air inlets (301,302) respectively; 3rd gas circuit 32 is connected with above-mentioned gas outlet.
Due to two air inlets (301,302) the same side of buffer container 30 it is respectively positioned on, and first gas circuit 21 and the second gas circuit 31 be parallel to each other, this mode that can realize the unsaturation steam gas in the first gas circuit 21 and the employing parallel feed of the saturated vapor gas in the second gas circuit 31 flows in buffer container 30 and is mutually mixed, and this reduces the risk of offset mutually between the gas of different gas circuit. And, due to the diameter D of buffer container 30 diameter more than air inlet d, gas in the gas circuit of each road is when each air inlet that diameter is less abruptly enters in the buffer container 30 being relatively large in diameter, the pressure of gas can decline rapidly, thus saturated vapor gas would not be produced offset effect by unsaturation steam gas in the buffer container 30 that pressure is relatively low, and then can ensure that the normal air inlet of multipath gas. Meanwhile, by above-mentioned buffer container, not only the maximum stream flow of conveying gas is not affected, it is also possible to improve the mixing uniformity of gas with various, thus being conducive to the optimization of process results.
Preferably, two air inlets (301,302) symmetrical relative to the longitudinal center line O of buffer container 30, so can enable to uniformly flow into buffer container 30 from the gas in the gas circuit of each road from each air inlet, such that it is able to improve the mixing uniformity of gas with various further.
In the present embodiment, 1/2nd of the radius R that radial distance is buffer container 30 between longitudinal center line and the longitudinal center line O of buffer container 30 of two air inlets (301,302). It is true that in actual applications, this radial distance arbitrarily can adjust according to the radius size of buffer container, for instance, this radial distance can also be 1/3rd or 2/3rds of buffer container radius.
Preferably, the span of the ratio between the diameter D and the diameter d of each air inlet of buffer container 30 is at 5:1��20:1; The span of the ratio between axial length L and its diameter D of buffer container 30 is at 1:1��3:1. In actual applications, above-mentioned two ratio all can arbitrarily select as the case may be in this span.
Preferably, first gas circuit the 31, second gas circuit 21, buffer container 30 and the 3rd gas circuit 32 are respectively provided with pressure-display device (not shown), for monitoring each road gas circuit and the pressure of buffer container 30, in order to better transfer of gas and mixing are controlled.
It addition, the length of the 3rd gas circuit 32 should suitably be selected, this length should ensure that gas can effectively mix also to ensure that gaseous mixture flows into the flow velocity of processing chamber 10 simultaneously. Preferably, the span of the length of the 3rd gas circuit 32 is at 0.5��2m.
It should be noted that in the present embodiment, buffer container 30 is cylinder, but the invention is not limited in this, and in actual applications, buffer container can also be other arbitrary shapes of such as cone, spheroid, spheroid, cuboid or many cubes etc.
It can further be stated that, in the present embodiment, the quantity of the second gas circuit is a road, but the invention is not limited in this, in actual applications, according to different technique, the quantity of the second gas circuit can also be multichannel, for carrying different saturated vapor gas respectively, and multichannel the second gas circuit is parallel to each other equally, and connects with the air inlet of corresponding buffer container. And, similar with above-described embodiment, when the quantity of the second gas circuit is multichannel, the first gas circuit and Ge Lu the second gas circuit are distributed relative to the axisymmetrical of buffer container equally. Such as, as shown in Figure 6, if the second gas circuit is two-way, then the first gas circuit and two-way the second gas circuit are that equilateral triangle is symmetrical. And for example, if the second gas circuit is three tunnels, then the first gas circuit and three tunnel the second gas circuits are square symmetrical, or, it is also possible to making three tunnel the second gas circuits is that equilateral triangle is symmetrical, and the first gas circuit is positioned on the axis of buffer container.
As another technical scheme, the embodiment of the present invention also provides for a kind of semiconductor processing equipment, and including processing chamber with for providing the gas handling system of process gas to this processing chamber, this gas handling system adopts the above-mentioned gas handling system that the embodiment of the present invention provides.
The semiconductor processing equipment that the embodiment of the present invention provides, its above-mentioned gas handling system provided by adopting the embodiment of the present invention, the maximum stream flow of conveying gas is not only affected by it, but also can avoid when saturated vapor gas is with the mixing of unsaturation steam gas, because of the offset effect that saturated vapor gas is produced by the former air pressure more than the air pressure of the latter, thereby may be ensured that the normal air inlet of multipath gas.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and the illustrative embodiments that adopts, but the invention is not limited in this. For those skilled in the art, without departing from the spirit and substance in the present invention, it is possible to make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (9)
1. a gas handling system, including for carrying the first gas circuit of unsaturation steam gas, for the second gas circuit carrying saturated vapor gas and the 3rd gas circuit being connected with reaction chamber, it is characterized in that, also include buffer container, described buffer container includes multiple air inlet and a gas outlet, the plurality of air inlet is respectively positioned on the same side of described buffer container, and described gas outlet is positioned at the opposite side that described buffer container is relative with each air inlet side; Further, the diameter of described buffer container is more than the diameter of each air inlet;
Described first gas circuit and the second gas circuit are parallel to each other, and are connected with each air inlet correspondingly; Described 3rd gas circuit is connected with described gas outlet.
2. gas handling system according to claim 1, it is characterised in that the plurality of air inlet is symmetrical relative to the longitudinal center line of described buffer container.
3. gas handling system according to claim 2, it is characterised in that radial distance is described buffer container radius 1/2nd or 1/3rd or 2/3rds between longitudinal center line and the longitudinal center line of described buffer container of each air inlet.
4. gas handling system according to claim 1, it is characterised in that the span of the ratio between diameter and the diameter of each described air inlet of described buffer container is at 5:1��20:1.
5. gas handling system according to claim 1, it is characterised in that the span of the ratio between axial length and its diameter of described buffer container is at 1:1��3:1.
6. the gas handling system according to claim 1-5 any one, it is characterised in that the quantity of described second gas circuit is a road or the multichannel being parallel to each other, the second gas circuit described in multichannel is for carrying different saturated vapor gas respectively;
Described first gas circuit and Ge Lu the second gas circuit are distributed relative to the axisymmetrical of described buffer container.
7. gas handling system according to claim 1, it is characterised in that the span of the length of described 3rd gas circuit is at 0.5��2m.
8. gas handling system according to claim 1, it is characterised in that be respectively provided with pressure-display device in described first gas circuit, the second gas circuit, buffer container and the 3rd gas circuit.
9. a semiconductor processing equipment, including processing chamber with for providing the gas handling system of process gas to described processing chamber, it is characterised in that described gas handling system adopts the gas handling system described in claim 1-8 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410639810.1A CN105632970A (en) | 2014-11-13 | 2014-11-13 | Air inlet system and semiconductor processing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410639810.1A CN105632970A (en) | 2014-11-13 | 2014-11-13 | Air inlet system and semiconductor processing device |
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| CN105632970A true CN105632970A (en) | 2016-06-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410639810.1A Pending CN105632970A (en) | 2014-11-13 | 2014-11-13 | Air inlet system and semiconductor processing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109210374A (en) * | 2017-06-30 | 2019-01-15 | 北京北方华创微电子装备有限公司 | Air inlet pipeline and semiconductor processing equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63303825A (en) * | 1987-05-30 | 1988-12-12 | Nippon Tairan Kk | Raw material supply device |
| US5186120A (en) * | 1989-03-22 | 1993-02-16 | Mitsubishi Denki Kabushiki Kaisha | Mixture thin film forming apparatus |
| CN1612296A (en) * | 2003-10-29 | 2005-05-04 | 三星电子株式会社 | Diffusion system |
| CN101568375A (en) * | 2006-11-13 | 2009-10-28 | 东京毅力科创株式会社 | Method for supplying treatment gas, treatment gas supply system, and system for treating object |
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2014
- 2014-11-13 CN CN201410639810.1A patent/CN105632970A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63303825A (en) * | 1987-05-30 | 1988-12-12 | Nippon Tairan Kk | Raw material supply device |
| US5186120A (en) * | 1989-03-22 | 1993-02-16 | Mitsubishi Denki Kabushiki Kaisha | Mixture thin film forming apparatus |
| CN1612296A (en) * | 2003-10-29 | 2005-05-04 | 三星电子株式会社 | Diffusion system |
| CN101568375A (en) * | 2006-11-13 | 2009-10-28 | 东京毅力科创株式会社 | Method for supplying treatment gas, treatment gas supply system, and system for treating object |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109210374A (en) * | 2017-06-30 | 2019-01-15 | 北京北方华创微电子装备有限公司 | Air inlet pipeline and semiconductor processing equipment |
| CN109210374B (en) * | 2017-06-30 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Air inlet pipeline and semiconductor processing equipment |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |