CN105632955B - A kind of restorative procedure and central sensor of central sensor - Google Patents
A kind of restorative procedure and central sensor of central sensor Download PDFInfo
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- CN105632955B CN105632955B CN201410604980.6A CN201410604980A CN105632955B CN 105632955 B CN105632955 B CN 105632955B CN 201410604980 A CN201410604980 A CN 201410604980A CN 105632955 B CN105632955 B CN 105632955B
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Abstract
The invention discloses a kind of restorative procedure of central sensor and central sensor, restorative procedure includes entire light receiving surface and the built-in optical path removed in former central sensor including aperture and mirror surface；Reception pipe is taken out, former aperture position is placed in, wherein the receiving plane direction that reception pipe is arranged is downward；The position of light receiving surface is chosen by measuring center sensor output voltage；The reception pipe is fixed.The method applied in the present invention shortens laser path, reduces laser energy consumption, to reduce laser power requirement, and then extend the Acceptable life of laser diode due to eliminating internal optical path；Simultaneously as light receiving surface position can be adjusted, makes it possible to choose silicon photocell optimal absorption position, substantially reduce repairing difficulty.
Description
Technical field
The present invention relates to the restorative procedure of semi-conductor device technology field more particularly to a kind of central sensor and convenient for repairing
Multiple central sensor.
Background technique
Central sensor is that (European Semiconductor Equipment Center, European semiconductor are set ESEC
Standby center) loader important component, be mainly used for lead frame counnter attack and Primary Location.Central sensor is expensive, repairs
Rate is extremely low.The damage of central sensor is mostly the aging because of optical path.
As shown in figure 5, original central sensor photodetection zone be diameter be 1mm aperture 100, around be one
Layer mirror surface 200.Its testing principle is as shown in fig. 6, laser diode 300 issues laser, by entering aperture after lens focus
100, then (the silicon photocell 500 at this time of silicon photocell 500 is injected by the reflecting optics 400 that 2 not in the same direction 45 ° are arranged
Receive up, silicon photocell 500 described in this is reception pipe), it is achieved in lead frame light transmission and light-blocking reflection.
Such central sensor recovery technique there are the problem of are as follows:
1, laser diode monopolizes, and original-pack light emitting source (i.e. laser diode) is model IM220, band PD (feedback protection
End), common anode laser diode can not find the laser diode of this model on the market；
2, light receiving surface is too small and position is limited, and the light of laser diode transmitting is emitted to having for receiving plane by lens
Effect region is just 1mm (being determined by measurement hot spot), and central sensor is mainly determined by detection lead frame aperture edge
Therefore position in the restricted area of light receiving surface manufacture 1mm, increases maintenance difficulty --- and laser diode shooting angle is each
It is different, original device from the aspect of performance and function it is excessively rigorous, to maintenance, debugging, element is alternative brings very big difficulty；
3, built-in optical path maintenance difficult, the optical path key element of central sensor are laser diode and photocell, original
Reason is exactly that light emission is allowed to enter silicon photocell nothing but, and 2 45 ° of mirror surfaces of original optical path are completely closed, can not it be debugged and be repaired.
Summary of the invention
The purpose of this section is to summarize some aspects of the embodiment of the present invention and briefly introduce some preferable implementations
Example.It may do a little simplified or be omitted to avoid our department is made in this section and the description of the application and the title of the invention
Point, the purpose of abstract of description and denomination of invention it is fuzzy, and this simplification or omit and cannot be used for limiting the scope of the invention.
In view of above-mentioned and/or existing central sensor restorative procedure the problem of, propose the present invention.
Therefore, it is an object of the invention to based on the reason of the duration of service, central sensor gradually aging, seriously
Product quality and equipment downtime rate are influenced, the problems such as central sensor reparation is difficult, and laser diode is alternative is mainly solved.
In order to solve the above technical problems, the present invention provides the following technical scheme that a kind of restorative procedure of central sensor,
It includes entire light receiving surface and the built-in optical path removed in former central sensor including aperture and mirror surface；It will connect
Closed tube is taken out, and is placed in former aperture position, wherein the receiving plane direction that reception pipe is arranged is downward；It is passed by measuring center
Sensor output voltage chooses the position of light receiving surface；The reception pipe is fixed.
A kind of preferred embodiment of restorative procedure as central sensor of the present invention, in which: in the removal original
It is described to take reception pipe after including the steps that entire receiving plane and the built-in optical path including aperture and mirror surface in heart sensor
Out, it is placed in former aperture position, wherein before the downward step in receiving plane direction of reception pipe is set, further include, it will be alternative
Laser diode is replaced to former laser diode position；The alternative setting angle for swashing two aurora tubes is debugged, is arrived by observing laser
The alternative angle for swashing two aurora tubes, and fixed alternative sharp two aurora tubes are determined up to the hot spot of light receiving surface.
A kind of preferred embodiment of restorative procedure as central sensor of the present invention, in which: the alternative laser two
Pole pipe is 5V, band feedback protection end near-infrared common cathode laser diode.
A kind of preferred embodiment of restorative procedure as central sensor of the present invention, in which: connect described by described
After the fixed step of closed tube, further include, it is ensured that the aperture in central sensor after machine can be with another location central sensor
Aperture is corrected to the step on same straight line, specifically: on the basis of the aperture position of the another location central sensor, to
It is upper to detect to the edge of pre-set horizontal stripe position, in fixed detecting distance, if passing through machine in the central sensor
Aperture afterwards can not detect horizontal stripe, then correct failure；Conversely, success.
It is a further object to provide a kind of central sensors of easy access.
In order to solve the above technical problems, the present invention provides the following technical scheme that a kind of central sensor, including, control
Component, the main part being connect with the control unit, laser beam emitting device, laser induced reception device, the Laser emission dress
It sets and is set to including alternative laser diode in the control unit and sudden and violent by the upper surface upper opening of the control unit
It exposes outside, so that the laser that the laser beam emitting device issues can project the control unit；The laser induced reception
Device includes reception pipe, the positive upper end of aperture of the main part is set to, so that laser can be emitted directly toward the laser
Incude reception device.
The present invention provides a kind of restorative procedure of central sensor and a kind of central sensors, compared with prior art,
It has the advantage that:
(1) power requirement for reducing laser diode, to reduce the use cost of laser diode；Due to eliminating
Internal optical path, shortens laser path, reduces laser energy consumption, to reduce laser power requirement, expands alternative laser
The selection space of diode, while extending the Acceptable life of laser diode；
(2) expansion of light receiving surface eliminates the limitation of laser diode shooting angle, expands alternative laser significantly
Pipe range of choice；
(3) since light receiving surface position can be adjusted, make it possible to choose silicon photocell optimal absorption position, significantly
It reduces and repairs difficulty；
(4) import spare parts domestically produced is alternative, substantially reduces spare parts purchasing expense.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, required use in being described below to embodiment
Attached drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for this
For the those of ordinary skill of field, without any creative labor, it can also be obtained according to these attached drawings other
Attached drawing.Wherein:
The step of Fig. 1 is a kind of the first specific embodiment of the restorative procedure of central sensor of the present invention is illustrated
Figure；
Fig. 2 is the structural schematic diagram after being transformed according to a kind of restorative procedure of central sensor of the present invention；
The step of Fig. 3 is a kind of second of specific embodiment of restorative procedure of central sensor of the present invention is illustrated
Figure；
Fig. 4 is that a kind of restorative procedure of central sensor of the present invention guarantees in central sensor its test point energy after machine
The schematic diagram on same straight line is corrected to another location central sensor；
Fig. 5 is prior art center sensor photoelectric detection zone schematic diagram；
Fig. 6 is prior art center sensor photoelectric detection schematic diagram.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, but the present invention can be with
Implemented using other than the one described here other way, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by the specific embodiments disclosed below.
Secondly, combination schematic diagram of the present invention is described in detail, when describing the embodiments of the present invention, for purposes of illustration only, table
Show that the sectional view of device architecture can disobey general proportion and make partial enlargement, and the schematic diagram is example, is not answered herein
Limit the scope of protection of the invention.In addition, the three-dimensional space of length, width and depth should be included in actual fabrication.
As shown in Figure 1, the first specific embodiment of the invention, provides firstly a kind of reparation side of central sensor
Method, this method comprises the following steps:
Step 1 S1: entire light receiving surface in former central sensor including aperture and mirror surface and built-in is removed
Optical path.
In this step, due to former central sensor package assembly and the fastness of material, it is necessary to which head is completely broken
It is bad, in order to the operation of subsequent step.
Step 2 S2: reception pipe is taken out, and is placed in former aperture position.
It is shown in Figure 2, after the position of reception pipe 10 (i.e. silicon photocell) from former central sensor is removed, it is placed in original
100 position of aperture.At this point, the receiving plane direction of setting reception pipe 10 is downward, emit in order to receive laser diode 300
Laser.But do not ensure that at this time laser energy accurate and effective must be received pipe 10 absorption, due to light receiving surface expansion (for
Entire 10 receiving plane of silicon photocell) and its activity give the adjustability of light receiving surface and expand laser diode significantly
The selection range of 300 shooting angles.
Step 3 S3: the position of light receiving surface is chosen by measuring center sensor output voltage.
Referring to fig. 2, in this step, the best of light receiving surface is chosen by the output voltage of measuring center sensor
Position.
Step 4 S4: the reception pipe is fixed.
In this step, due to having determined that the optimum position of light receiving surface in upper step, so, by the reception pipe
10 is fixed, as shown in Figure 2.At this point, improved structure, laser is emitted directly toward reception pipe 10 after passing through lens focus, and reaches
Detection effect same as original device and precision.
In this way, method used by the embodiment shortens laser path, reduces sharp due to eliminating internal optical path
Luminous energy consumption, to reduce laser power requirement, and then extends the Acceptable life of laser diode；Simultaneously as light
Line receiving plane position can be adjusted, and made it possible to choose silicon photocell optimal absorption position, substantially reduced repairing difficulty.
As shown in figure 3, Fig. 3 in fact provides the restorative procedure of another central sensor, i.e., second specific implementation
Mode, this method comprises the following steps:
Step 1 S1: entire light receiving surface in former central sensor including aperture and mirror surface and built-in is removed
Optical path.
In this step, due to former central sensor package assembly and the fastness of material, it is necessary to which head is complete
It destroys, in order to the operation of subsequent step.
Step 2 T1: by alternative laser diode replacement to former laser diode position.
Referring to fig. 2, in the prior art, since laser diode monopolizes, original-pack light emitting source (i.e. laser diode) is model
For IM220, band PD (feedback protection end), common anode laser diode can not find the laser diode of this model on the market, because
This, the step in, find other model laser diodes come it is alternative.Alternative laser diode 20 must have and original-pack laser
The identical driving voltage of diode, the optical maser wavelength other than 680nm, effective laser intensity, accurately launch angle and qualified
Service life, it is important to laser is mapped to the effective coverage of light receiving surface just in aperture 100 by transmissive mirror.
Certainly, in the fact that mode, alternative laser diode 20 can select 5V, band two pole of PD near-infrared common cathode laser
Pipe.
Step 3 T2: the alternative setting angle for swashing two aurora tubes of debugging reaches the light of light receiving surface by observation laser
Spot determines the alternative angle for swashing two aurora tubes, and fixed alternative swashs two aurora tubes.
As shown in Fig. 2, Fig. 6, guarantee that the alternative laser for swashing the transmitting of two aurora tubes 20 can be mapped to light by transmissive mirror and connect
Committed step of the effective coverage in receipts face just in aperture 100, in the fact that be mode.By debugging alternative two pole of laser
The setting angle of pipe 20 reaches the hot spot of light receiving surface by observation laser to determine the established angle of alternative laser diode 20
Degree, when hot spot reaches suitable position, fixed alternative laser diode 20.
Step 4 S2: reception pipe is taken out, and is placed in former aperture position.
Referring to fig. 2 and shown in Fig. 6, after the position of reception pipe 10 (i.e. silicon photocell) from former central sensor is removed, put
It is placed in former 100 position of aperture.At this point, the receiving plane direction of setting reception pipe 10 is downward, in order to receive laser diode
The laser of 300 transmittings.But do not ensure that laser energy accurate and effective must be received the absorption of pipe 10 at this time, due to light receiving surface
Expand (for entire 10 receiving plane of silicon photocell) and its activity gives the adjustability of light receiving surface and expands significantly sharp
The selection range of 300 shooting angle of optical diode.
Step 5 S3: the position of light receiving surface is chosen by measuring center sensor output voltage.
Referring to fig. 2, in this step, light receiving surface is chosen by the output voltage of measuring center sensor most
Best placement.
Step 6 S4: the reception pipe is fixed.
In this step, due to having determined that the optimum position of light receiving surface in upper step, so, by the reception
Pipe 10 is fixed, as shown in Figure 2.At this point, improved structure, laser is emitted directly toward reception pipe 10 after passing through lens focus, and reaches
To detection effect same as original device and precision.
In this way, method used by this embodiment, reduces the power requirement of laser diode, to reduce laser
The use cost of diode: due to eliminating internal optical path, laser path is shortened, laser energy consumption is reduced, to reduce
Laser power requirement, expands the selection space of alternative laser diode, while extending the effective of laser diode and using the longevity
Life；Also, the expansion of light receiving surface eliminates the limitation of laser diode shooting angle, expands alternative laser tube choosing significantly
Select range；And since light receiving surface position can be adjusted, make it possible to choose silicon photocell optimal absorption position, drops significantly
Low repairing difficulty, while import spare parts domestically produced is alternative, substantially reduces spare parts purchasing expense.
It is in the first specific embodiment or second of specific embodiment party the present invention also provides a kind of embodiment
After formula, it is ensured that the aperture in central sensor after machine can be corrected on same straight line with the aperture of another location central sensor
Step.
As shown in figure 4, being detected upwards on the basis of 30 position of aperture of another location central sensor to pre-set
The edge of 40 position of horizontal stripe, in fixed detecting distance, if can not be detected through the aperture 100 after machine in central sensor
Horizontal stripe then corrects failure；Conversely, correcting successfully.
This is to guarantee that its test point can be with another location center after machine in central sensor after having debugged light path system in fact
Step on sensor calibration to same straight line, the central sensor more inclined for some test points can be by debugging center
Sensor motor baffle debugs test point initial position, until being adjusted to correct successfully then repairs completion.
The present invention also provides a kind of central sensors, as shown in Figure 2 comprising, control unit and the control unit
The main part of connection, laser beam emitting device, laser induced reception device, laser beam emitting device include alternative laser diode 20,
It is set in the control unit and is exposed to by the upper surface upper opening of the control unit outside, so that the laser
The laser that emitter issues can project the control unit；Laser induced reception device includes reception pipe 10, is set to
The positive upper end of aperture 100 of the main part, so that laser can be emitted directly toward the laser induced reception device.So set
It sets, convenient for the reparation after central sensor aging.
It should be noted that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to preferable
Embodiment describes the invention in detail, those skilled in the art should understand that, it can be to technology of the invention
Scheme is modified or replaced equivalently, and without departing from the spirit and scope of the technical solution of the present invention, should all be covered in this hair
In bright scope of the claims.
Claims (5)
1. a kind of restorative procedure of central sensor, it is characterised in that: including,
Remove the entire light receiving surface in former central sensor including aperture and mirror surface and built-in optical path；
Reception pipe is taken out, former aperture position is placed in, wherein the receiving plane direction that reception pipe is arranged is downward；
The position of light receiving surface is chosen by measuring center sensor output voltage；
The reception pipe is fixed.
2. the restorative procedure of central sensor according to claim 1, it is characterised in that: sensed at the former center of the removal
It is described to take out reception pipe after including the steps that entire receiving plane and the built-in optical path including aperture and mirror surface in device, it places
In former aperture position, wherein before the downward step in receiving plane direction of reception pipe is set, further include,
By alternative laser diode replacement to former laser diode position；
The alternative setting angle for swashing two aurora tubes is debugged, it is alternative sharp to determine to reach the hot spot of light receiving surface by observation laser
The angle of two aurora tubes, and fixed alternative sharp two aurora tubes.
3. the restorative procedure of central sensor according to claim 2, it is characterised in that: the alternative laser diode is
5V, band feedback protection end near-infrared common cathode laser diode.
4. the restorative procedure of central sensor according to claim 1 or 2, it is characterised in that: described by the reception
After the fixed step of pipe, further include,
Ensure that the aperture in central sensor after machine can be corrected on same straight line with the aperture of another location central sensor
Step, specifically:
On the basis of the aperture position of the another location central sensor, detected upwards to the side of pre-set horizontal stripe position
Edge, if can not detect horizontal stripe through the aperture after machine in the central sensor, corrects mistake in fixed detecting distance
It loses；Conversely, success.
5. a kind of central sensor is used for lead frame counnter attack and Primary Location, it is characterised in that: including,
Control unit, the main part being connect with the control unit, laser beam emitting device, laser induced reception device,
The laser beam emitting device includes alternative laser diode, is set in the control unit and by the control unit
Outside the upper surface upper opening of part is exposed to, so that the laser that the laser beam emitting device issues can project the control unit
Part；
The laser induced reception device includes reception pipe, the positive upper end of aperture of the main part is set to, so that laser
It can be emitted directly toward the laser induced reception device,
The reception pipe is silicon photocell, the reception pipe be able to reflect the light transmission of lead frame with it is light-blocking.
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101542254A (en) * | 2007-02-16 | 2009-09-23 | 应用材料股份有限公司 | Substrate temperature measurement by infrared transmission |
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| JP3453112B2 (en) * | 2000-08-01 | 2003-10-06 | 大塚電子株式会社 | Optical automatic measurement method |
| JP4454281B2 (en) * | 2003-10-14 | 2010-04-21 | シャープ株式会社 | Image reading apparatus and image forming apparatus |
| CN103201588A (en) * | 2010-08-16 | 2013-07-10 | 第一太阳能有限公司 | Measurement system and method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101542254A (en) * | 2007-02-16 | 2009-09-23 | 应用材料股份有限公司 | Substrate temperature measurement by infrared transmission |
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