CN105632900A - 一种石墨烯自对准顶栅场效应晶体管器件的方法 - Google Patents
一种石墨烯自对准顶栅场效应晶体管器件的方法 Download PDFInfo
- Publication number
- CN105632900A CN105632900A CN201511026682.4A CN201511026682A CN105632900A CN 105632900 A CN105632900 A CN 105632900A CN 201511026682 A CN201511026682 A CN 201511026682A CN 105632900 A CN105632900 A CN 105632900A
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- Prior art keywords
- graphene
- grid
- etching
- effect transistor
- transistor device
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Links
- 238000000034 method Methods 0.000 title claims abstract description 60
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 43
- 230000005669 field effect Effects 0.000 title claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 29
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 22
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 238000001039 wet etching Methods 0.000 claims abstract description 6
- 229960001866 silicon dioxide Drugs 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000010894 electron beam technology Methods 0.000 claims description 6
- 125000001153 fluoro group Chemical group F* 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000007670 refining Methods 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000000873 masking effect Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201511026682.4A CN105632900B (zh) | 2015-12-29 | 2015-12-29 | 一种石墨烯自对准顶栅场效应晶体管器件的制备方法 |
Applications Claiming Priority (1)
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CN201511026682.4A CN105632900B (zh) | 2015-12-29 | 2015-12-29 | 一种石墨烯自对准顶栅场效应晶体管器件的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN105632900A true CN105632900A (zh) | 2016-06-01 |
CN105632900B CN105632900B (zh) | 2018-05-04 |
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CN201511026682.4A Expired - Fee Related CN105632900B (zh) | 2015-12-29 | 2015-12-29 | 一种石墨烯自对准顶栅场效应晶体管器件的制备方法 |
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CN (1) | CN105632900B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110137075A (zh) * | 2019-05-14 | 2019-08-16 | 南京中电芯谷高频器件产业技术研究院有限公司 | 一种离子注入氧化实现自对准石墨烯晶体管的制造方法 |
CN111952177A (zh) * | 2020-08-20 | 2020-11-17 | 中国科学院半导体研究所 | Hemt器件及其制作方法 |
CN112309846A (zh) * | 2020-09-27 | 2021-02-02 | 中国电子科技集团公司第十三研究所 | 一种二维材料场效应晶体管的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101834206A (zh) * | 2010-04-12 | 2010-09-15 | 清华大学 | 半导体器件结构及其形成方法 |
US20110114919A1 (en) * | 2009-11-13 | 2011-05-19 | International Business Machines Corporation | Self-aligned graphene transistor |
CN102569399A (zh) * | 2011-11-29 | 2012-07-11 | 中国科学院微电子研究所 | 源漏自对准的mos器件及其制作方法 |
CN103311276A (zh) * | 2013-06-07 | 2013-09-18 | 中国科学院微电子研究所 | 一种自对准石墨烯场效应晶体管及其制备方法 |
-
2015
- 2015-12-29 CN CN201511026682.4A patent/CN105632900B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110114919A1 (en) * | 2009-11-13 | 2011-05-19 | International Business Machines Corporation | Self-aligned graphene transistor |
CN101834206A (zh) * | 2010-04-12 | 2010-09-15 | 清华大学 | 半导体器件结构及其形成方法 |
CN102569399A (zh) * | 2011-11-29 | 2012-07-11 | 中国科学院微电子研究所 | 源漏自对准的mos器件及其制作方法 |
CN103311276A (zh) * | 2013-06-07 | 2013-09-18 | 中国科学院微电子研究所 | 一种自对准石墨烯场效应晶体管及其制备方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110137075A (zh) * | 2019-05-14 | 2019-08-16 | 南京中电芯谷高频器件产业技术研究院有限公司 | 一种离子注入氧化实现自对准石墨烯晶体管的制造方法 |
CN110137075B (zh) * | 2019-05-14 | 2021-06-11 | 南京中电芯谷高频器件产业技术研究院有限公司 | 一种离子注入氧化实现自对准石墨烯晶体管的制造方法 |
CN111952177A (zh) * | 2020-08-20 | 2020-11-17 | 中国科学院半导体研究所 | Hemt器件及其制作方法 |
CN112309846A (zh) * | 2020-09-27 | 2021-02-02 | 中国电子科技集团公司第十三研究所 | 一种二维材料场效应晶体管的制备方法 |
CN112309846B (zh) * | 2020-09-27 | 2023-01-17 | 中国电子科技集团公司第十三研究所 | 一种二维材料场效应晶体管的制备方法 |
Also Published As
Publication number | Publication date |
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CN105632900B (zh) | 2018-05-04 |
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Effective date of registration: 20201119 Address after: 221700 Beiyuan Road, Fengxian County Economic Development Zone, Xuzhou, Jiangsu Patentee after: JIANGSU NARI YINLONG CABLE Co.,Ltd. Address before: 523000 Room 301, 6B International Finance Innovation Park, Songshan Lake high tech Industrial Development Zone, Dongguan, Guangdong Patentee before: DONGGUAN GUANGXIN INTELLECTUAL PROPERTY SERVICES Co.,Ltd. |
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