CN105629522A - 硅基光调制器 - Google Patents
硅基光调制器 Download PDFInfo
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- CN105629522A CN105629522A CN201410620813.0A CN201410620813A CN105629522A CN 105629522 A CN105629522 A CN 105629522A CN 201410620813 A CN201410620813 A CN 201410620813A CN 105629522 A CN105629522 A CN 105629522A
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CN201410620813.0A CN105629522B (zh) | 2014-11-06 | 2014-11-06 | 硅基光调制器 |
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CN105629522A true CN105629522A (zh) | 2016-06-01 |
CN105629522B CN105629522B (zh) | 2018-07-06 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106547122A (zh) * | 2017-01-25 | 2017-03-29 | 中国科学院半导体研究所 | 一种反向pn型掺杂结构及制备方法 |
CN106784072A (zh) * | 2016-12-15 | 2017-05-31 | 武汉邮电科学研究院 | 倒锥型大功率硅锗光电探测器及提高入射光功率的方法 |
CN112596276A (zh) * | 2020-12-31 | 2021-04-02 | 武汉邮电科学研究院有限公司 | 一种偏振不敏感相位调制器及调制方法 |
CN111240052B (zh) * | 2020-03-10 | 2023-03-21 | Nano科技(北京)有限公司 | 一种共面波导传输线及带有该共面波导传输线的硅基电光调制器 |
Citations (7)
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US6566204B1 (en) * | 2000-03-31 | 2003-05-20 | National Semiconductor Corporation | Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors |
CN1764863A (zh) * | 2003-03-25 | 2006-04-26 | 斯欧普迪克尔股份有限公司 | 高速硅基电光调制器 |
US7136544B1 (en) * | 2003-08-15 | 2006-11-14 | Luxtera, Inc. | PN diode optical modulators fabricated in strip loaded waveguides |
CN102520486A (zh) * | 2011-12-01 | 2012-06-27 | 浙江大学 | 基于双马赫曾德尔干涉结构的多功能器件 |
US8211773B2 (en) * | 2005-09-29 | 2012-07-03 | Texas Instruments Incorporated | SRAM cell with asymmetrical pass gate |
CN103226252A (zh) * | 2013-05-06 | 2013-07-31 | 中国科学院半导体研究所 | 一种提高耗尽型硅基电光调制器调制效率的掺杂结构 |
CN204155032U (zh) * | 2014-11-06 | 2015-02-11 | 江苏尚飞光电科技有限公司 | 硅基光调制器 |
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2014
- 2014-11-06 CN CN201410620813.0A patent/CN105629522B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6566204B1 (en) * | 2000-03-31 | 2003-05-20 | National Semiconductor Corporation | Use of mask shadowing and angled implantation in fabricating asymmetrical field-effect transistors |
CN1764863A (zh) * | 2003-03-25 | 2006-04-26 | 斯欧普迪克尔股份有限公司 | 高速硅基电光调制器 |
US7136544B1 (en) * | 2003-08-15 | 2006-11-14 | Luxtera, Inc. | PN diode optical modulators fabricated in strip loaded waveguides |
US8211773B2 (en) * | 2005-09-29 | 2012-07-03 | Texas Instruments Incorporated | SRAM cell with asymmetrical pass gate |
CN102520486A (zh) * | 2011-12-01 | 2012-06-27 | 浙江大学 | 基于双马赫曾德尔干涉结构的多功能器件 |
CN103226252A (zh) * | 2013-05-06 | 2013-07-31 | 中国科学院半导体研究所 | 一种提高耗尽型硅基电光调制器调制效率的掺杂结构 |
CN204155032U (zh) * | 2014-11-06 | 2015-02-11 | 江苏尚飞光电科技有限公司 | 硅基光调制器 |
Non-Patent Citations (2)
Title |
---|
JING WANG等: "Design of a SiO2 top-cladding and compact polarization splitter-rotator based on a rib directional coupler", 《OPTICS EXPRESS》 * |
JING WANG等: "Optimization and Demonstration of a Large-bandwidth Carrier-depletion Silicon Optical Modulator", 《JOURNAL OF LIGHTWAVE TECHNOLOGY》 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106784072A (zh) * | 2016-12-15 | 2017-05-31 | 武汉邮电科学研究院 | 倒锥型大功率硅锗光电探测器及提高入射光功率的方法 |
CN106784072B (zh) * | 2016-12-15 | 2019-02-26 | 武汉邮电科学研究院 | 倒锥型大功率硅锗光电探测器及提高入射光功率的方法 |
CN106547122A (zh) * | 2017-01-25 | 2017-03-29 | 中国科学院半导体研究所 | 一种反向pn型掺杂结构及制备方法 |
CN106547122B (zh) * | 2017-01-25 | 2019-03-22 | 中国科学院半导体研究所 | 一种反向pn型掺杂结构及制备方法 |
CN111240052B (zh) * | 2020-03-10 | 2023-03-21 | Nano科技(北京)有限公司 | 一种共面波导传输线及带有该共面波导传输线的硅基电光调制器 |
CN112596276A (zh) * | 2020-12-31 | 2021-04-02 | 武汉邮电科学研究院有限公司 | 一种偏振不敏感相位调制器及调制方法 |
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CN105629522B (zh) | 2018-07-06 |
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Effective date of registration: 20170614 Address after: 226017 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Bei Lou Park Development Research Applicant after: Nantong Photoelectric Engineering Center, Chinese Academy of Sciences Applicant after: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences Address before: 226009 Nantong science and Technology Industrial Park, Su Tong Road, Jiangsu, No. 14, No. 30 Applicant before: Jiangsu Shangfei Optoelectronics Technology Co., Ltd. Applicant before: Nantong Photoelectric Engineering Center, Chinese Academy of Sciences Applicant before: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences |
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Address after: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Co-patentee after: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences Patentee after: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Address before: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Co-patentee before: Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences Patentee before: Nantong Photoelectric Engineering Center, Chinese Academy of Sciences |
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Address after: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee after: Nantong Xinwei Research Institute Patentee after: Shanghai Institute of microsystems and information technology, Chinese Academy of Sciences Address before: 226017 R & D Park, Jiangcheng road 1088, Sutong science and Technology Industrial Park, Nantong, Jiangsu Patentee before: Shanghai Institute of Microsystems, Chinese Academy of Sciences, Nantong new Micro Research Institute Patentee before: Shanghai Institute of microsystems and information technology, Chinese Academy of Sciences |
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