CN105629380A - On-chip integrated optical waveguide structure for dispersion control and dispersion control method - Google Patents
On-chip integrated optical waveguide structure for dispersion control and dispersion control method Download PDFInfo
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- CN105629380A CN105629380A CN201610149999.5A CN201610149999A CN105629380A CN 105629380 A CN105629380 A CN 105629380A CN 201610149999 A CN201610149999 A CN 201610149999A CN 105629380 A CN105629380 A CN 105629380A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1205—Arsenic sulfide (As2S3)
Abstract
The invention discloses an on-chip integrated optical waveguide structure for dispersion control. The on-chip integrated optical waveguide structure comprises a waveguide core area on the upper surface of a substrate. The waveguide core area is provided with a wrapping layer. The waveguide core area is formed by upper and lower two layers of materials in different refractive indexes, wherein the two layers of materials in different refractive indexes are basically equal in width, and the refractive index ratio of the two layers of materials in different refractive indexes is larger than or equal to 1.15. The dispersion control method by utilizing the on-chip integrated optical waveguide structure is characterized in that, to begin with, calculation is carried out to obtain a saddle-shaped dispersion curve according to a group of preset structure dimension parameters of an optical waveguide; and then, by adjusting one or more parameters of the width of the contact surface of the waveguide core region and the substrate, height of the high-refraction-index material and height of the low-refraction-index material, dispersion control is realized. The core region of the waveguide structure designed before is reduced from three layers to two layers, thereby reducing structure parameters required by the dispersion control, and reducing requirement on processing conditions; and compared with prior art, more materials are suitable for the waveguide core region.
Description
Technical field
The present invention relates to the structure that can be used for optical waveguides integrated on the chip of Dispersion managed and Dispersion managed method thereof, it belongs to integrated optics and micro-nano rice optical field.
Background technology
Waveguide refers to the structure for directional guide hertzian wave, common waveguiding structure has parallel double conducting wire, coaxial line, parallel flat waveguide, rectangular waveguide and optical fiber etc., general waveguide core region is made up of high-index material, and the covering of this waveguide is made up of low-index material or air. Dispersion refers to when a branch of light pulse is transmitted in the waveguide, and the light velocity of propagation of different frequency is different, causes the phenomenon of pulse strenching. Instantly, integrated optics and micro-nano rice optical field are flourish, how to can be integrated optical waveguides carry out Dispersion managed, thus the application such as generation realizing dispersion compensation, low dispersive transmission, super continuous spectrums and optical frequency comb to become a research popular. In optical waveguides that can be integrated, by design waveguiding structure, select suitable material, can effectively change waveguide dispersion, thus carry out Dispersion managed flexibly. Publication number is US8483529B2, its publication date be on July 9th, 2013 patent documentation in disclose one " Waveguide-baseddispersiondevice ", devising the structure of a kind of slot type waveguide and strip type waveguide-coupled, this structure introduces a kind of pattern transition mechanisms[1], it is thus possible to carry out Dispersion managed. Publication number is US9110219B1, its publication date be on August 18th, 2015 patent documentation in disclose one " On-chiptwo-octavesupercontinuumgenerationenabledbyadvanc edchromaticdispersiontailoringinslottedwaveguides ", devise a kind of follow-on slot type waveguiding structure, this can make dispersion values four dispersion zero-point occur along with the curve of wavelength change, is similar to the shape of a saddle[2], Dispersion managed can be realized more flexibly. In such waveguiding structure, core district is arranged three floor in the index distribution mode of high-low-high from top to bottom, for carrying out, the parameter of dispersion regulation and control is the height of three material areas and the width of waveguide core region in this waveguide, four altogether, such three-decker waveguide complete processing is many, for the requirement height of processing conditions, and this structure requires the ratio height of high-index material and low-index material, and the applicable material in this structure is few.
[reference]
[1]L.Zhangetal.Opt.Express,vol.18,p.20529,2010.
[2]L.Zhangetal.OpticsLetters,vol.38,p.5122,2013.
Summary of the invention
Due to the requirement height of waveguide to processing conditions for carrying out dispersion regulation and control previously reported, for the defect of prior art, the present invention proposes new Dispersion managed method, can reduce the structural parameter needed for dispersion regulation and control, reduce the requirement to processing conditions, and increase the scope of optional material.
In order to solve the problems of the technologies described above, a kind of optical waveguide structure integrated on the chip of Dispersion managed that the present invention proposes, comprises the waveguide core region being positioned at above substrate, and described waveguide core region is provided with covering; Described waveguide core region is made up of the material of upper and lower two layers of different refractivity; Two layers of different refractivity material are substantially wide, refractive indices >=1.15 of the material of described two layers of different refractivity.
Further, the material of described two layers of different refractivity is selected combining from the same of the following first combination, the 2nd combination and the 3rd combination; First combination refers to that chalcogenide glass combines, and includes the S base glass of low-refraction, the Se base glass of high refractive index and Te base glass; Described S base glass at least comprises Ge2S3��As2S3��GexAsySzAnd GexPySz, described Se base glass at least comprises Ge2Se3��As2Se3��GexAsySez��GexSbySezAnd GexPySez, described Te base glass at least comprises GexSbyTez��GexSeyTezAnd AsxSeyTez; Wherein, x, y, z represent different mol ratio, and x+y+z=100. 2nd combination at least comprises TiO2��HfO2��Al2O3��SiO2��Ga2O3��Ta2O3, AlN and Si3N4; 3rd combination at least comprises Ge, SiC, Si, Al2O3, Diamond, InP, GaAs.
The Dispersion managed method of optical waveguide structure integrated in said chip is utilized to be first, by the one of the optical waveguides preset group of parameters of structural dimension, calculate a shape of a saddle dispersion curve; Then, by the one or more parameters in the height adjusting waveguide core region and the width of substrate contact surface, the height of high-index material and low-index material, thus realizing Dispersion managed, particular content is as follows:
By increasing the height of high-index material so that the direction that shape of a saddle dispersion curve crossed disperstion value increases is moved, and the displacement amount at left peak is greater than the displacement amount of right forward;
By increasing the height of low-index material so that the direction that shape of a saddle dispersion curve crossed disperstion value reduces is moved, and the displacement amount at left peak is less than the displacement amount of right forward;
By increasing the width of waveguide core region and substrate contact surface so that shape of a saddle dispersion curve is around being a bit rotated counterclockwise within the scope of this dispersion curve trench.
Compared with prior art, the invention has the beneficial effects as follows:
By the core district of the waveguiding structure designed before is kept to two floor by three floor, reduces the structural parameter needed for dispersion regulation and control, reduce the requirement to processing conditions. And the material being applicable to this waveguiding structure core district is more compared with before.
Accompanying drawing explanation
Fig. 1-1 is the structure 1 cross-sectional view schematic diagram of optical waveguide structure of the present invention;
Fig. 1-2 is the structure 2 cross-sectional view schematic diagram of optical waveguide structure of the present invention;
Fig. 1-3 is the structure 3 cross-sectional view schematic diagram of optical waveguide structure of the present invention;
Fig. 1-4 is the structure 4 cross-sectional view schematic diagram of optical waveguide structure of the present invention;
Fig. 2-1 is the displacement figure of shape of a saddle dispersion curve along with the height change of high-index material;
Fig. 2-2 is the displacement figure of shape of a saddle dispersion curve along with the height change of low-index material;
Fig. 2-3 is that shape of a saddle dispersion curve is along with the displacement figure of waveguide core region and the change of substrate interface width.
Embodiment
Technical solution of the present invention being described in further detail below in conjunction with the drawings and specific embodiments, the present invention is only explained by described specific embodiment, not in order to limit the present invention.
A kind of optical waveguide structure integrated on the chip of Dispersion managed that the present invention proposes, comprises the waveguide core region being positioned at above substrate 1, and described waveguide core region is provided with covering, and described substrate 1 is flat board that can be integrated, and the material of substrate and covering can adopt SiO2, GaF2, Al2O3Deng, in addition, covering can also be air. Described waveguide core region is made up of the material of upper and lower two layer 3 and 2 different refractivities; Two layers of different refractivity material are substantially wide, refractive indices >=1.15 of the material of described two layers of different refractivity. If Fig. 1-1 is to, shown in Fig. 1-4, in figure, being the material of relative low-refraction in double-layer structure with the level of vertical bar line, be the material of relative high refractive index with the level of oblique striped; Fig. 1-1 show high-index material under, Sidewall angles �� is slightly less than 90 ��; Fig. 1-2 shows high-index material upper, and Sidewall angles is slightly larger than 90 ��; Fig. 1-3 show high-index material under, wherein, substrate 1 is the optical waveguide structure with hollow structure 4, and Sidewall angles �� is slightly larger than 90 ��; Fig. 1-4 shows high-index material upper, and wherein, the optical waveguide structure of substrate 1 upper recessed groove structure 5 for bottom is provided with, Sidewall angles �� is slightly less than 90 ��.
Angle between the sidewall of described waveguide core region and upper surface of substrate is unrestricted, and in order to easy to process, this Sidewall angles �� is preferably slightly less than 90 ��.
The material of two layers of different refractivity described in optical waveguide structure is selected combining from the same of the following first combination, the 2nd combination and the 3rd combination.
First combination refers to that chalcogenide glass combines, and includes the S base glass of low-refraction, the Se base glass of high refractive index and Te base glass; Described S base glass at least comprises Ge2S3��As2S3��GexAsySzAnd GexPySz, described Se base glass at least comprises Ge2Se3��As2Se3��GexAsySez��GexSbySezAnd GexPySez, described Te base glass at least comprises GexSbyTez��GexSeyTezAnd AsxSeyTez; Wherein, x, y, z represent different mol ratio, and x+y+z=100.
2nd combination at least comprises TiO2��HfO2��Al2O3��SiO2��Ga2O3��Ta2O3, AlN and Si3N4��
3rd combination at least comprises Ge, SiC, Si, Al2O3, Diamond, InP, GaAs.
In order to reduce the loss of this optical waveguides, described substrate 1 is preferably hollow structure 4 or is provided with recessed groove structure 5 in the bottom of substrate 1, as shown in Fig. 1-3 and Fig. 1-4.
The method utilizing optical waveguide structure integrated on chip of the present invention to realize Dispersion managed is, first, by the one of the optical waveguides preset group of parameters of structural dimension, adopt the effective refractive index of COMSOLMultiphysics this structure of computed in software, by its dispersion property of MATLAB computed in software, it is possible to obtain a shape of a saddle dispersion curve; Then, by height (W, H of adjustment waveguide core region and the width of substrate contact surface, the height of high-index material and low-index material1��H2) in one or more parameters, thus realize Dispersion managed, particular content is as follows:
By increasing the height of high-index material so that the direction that shape of a saddle dispersion curve crossed disperstion value increases is moved, and the displacement amount at left peak is greater than the displacement amount at right peak, as shown in Fig. 2-1.
By increasing the height of low-index material so that the direction that shape of a saddle dispersion curve crossed disperstion value reduces is moved, and the displacement amount at left peak is less than the displacement amount at right peak, as shown in Fig. 2-2.
By increasing the width W of waveguide core region and substrate contact surface so that shape of a saddle dispersion curve around being a bit rotated counterclockwise within the scope of this dispersion curve trench, as Figure 2-3.
Embodiment:
As Figure 1-1, selected optical waveguide structure core district forms double-layer structure by bi-material, and upper layer of material 3 selects Ge15Sb20S65, its specific refractory power is about 2.2, and lower layer material 2 selects Ge30Sb10Se60, its specific refractory power is about 2.6, substrate 1 material selection CaF2, specific refractory power is about 1.5, and the covering of waveguide core region is air, and Sidewall angles �� is 88 ��. In order to study the light conductivity energy of this optical waveguide structure, adopt the effective refractive index of COMSOLMultiphysics this structure of computed in software, and by its dispersion property of MATLAB computed in software. First, preset one group of parameter, comprise waveguide core region and substrate 1 interface width W=1300nm, the height H of lower layer material 21=910nm, the height H of upper layer of material 32=520nm, can obtain the basic symmetrical shape of a saddle dispersion curve in left and right, and as shown in the dotted line in mid-way in Fig. 2-1, the dispersion difference between its peak, left and right and trench is 25ps/nm/km. The height only increasing high-index material (namely descending layer material 2) is to H1=950nm, the direction that this curve crossed disperstion value increases is moved, and the displacement amount at left peak is about 30ps/nm/km, and the displacement amount of right forward is about 15ps/nm/km, otherwise the height of reduction high-index material (namely descending layer material 2) is to H1=870nm, the direction that this curve crossed disperstion value reduces is moved, and the displacement amount at left peak is about-30ps/nm/km, and the displacement amount at right peak is about-15ps/nm/km, as shown in Fig. 2-1. The height only increasing low-index material (i.e. upper layer of material 3) is to H2=550nm, the direction that this curve crossed disperstion value reduces is moved, and the displacement amount at left peak is about-5ps/nm/km, and the displacement amount at right peak is about-15ps/nm/km, otherwise the height of reduction low-index material (i.e. upper layer of material 3) is to H2=490nm, the direction that this curve crossed disperstion value increases is moved, and the displacement amount at left peak is about 5ps/nm/km, and the displacement amount at right peak is about 15ps/nm/km, as shown in Fig. 2-2. The width only increasing waveguide core region and substrate 1 contact surface is to W=1350nm, this curve is around being a bit rotated counterclockwise within the scope of trench, the displacement amount at left peak is about-3ps/nm/km, the displacement amount at right peak is about 16ps/nm/km, otherwise reducing this width to W=1250nm, this curve is about 3ps/nm/km around a bit turning clockwise within the scope of trench, the displacement amount at left peak, the displacement amount at right peak is about-16ps/nm/km, as Figure 2-3. By changing three structural parameter value (H flexibly in the present invention1��H2And W) Dispersion managed can be realized.
Although above in conjunction with accompanying drawing, invention has been described; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; instead of it is restrictive; the those of ordinary skill of this area is under the enlightenment of the present invention; when not departing from objective of the present invention, it is also possible to make a lot of distortion, within these protections all belonging to the present invention.
Claims (6)
1. an optical waveguide structure integrated on the chip of Dispersion managed, comprises the waveguide core region being positioned at above substrate, and described waveguide core region is provided with covering; It is characterized in that: described waveguide core region is made up of the material of upper and lower two layers of different refractivity; Two layers of different refractivity material are substantially wide, refractive indices >=1.15 of the material of described two layers of different refractivity.
2. a kind of optical waveguide structure integrated on the chip of Dispersion managed according to claim 1, it is characterised in that, the material of described two layers of different refractivity is selected combining from the same of the following first combination, the 2nd combination and the 3rd combination;
First combination refers to that chalcogenide glass combines, and includes the S base glass of low-refraction, the Se base glass of high refractive index and Te base glass;
2nd combination at least comprises TiO2��HfO2��Al2O3��SiO2��Ga2O3��Ta2O3��Bi2O3, AlN and Si3N4;
3rd combination at least comprises Ge, SiC, Si, Al2O3, Diamond, InP, GaAs.
3. a kind of optical waveguide structure integrated on the chip of Dispersion managed according to claim 3, it is characterised in that, described S base glass at least comprises Ge2S3��As2S3��GexAsySzAnd GexPySz, described Se base glass at least comprises Ge2Se3��As2Se3��GexAsySez��GexSbySezAnd GexPySez, described Te base glass at least comprises GexSbyTez��GexSeyTezAnd AsxSeyTez; Wherein, x, y, z represent different mol ratio, and x+y+z=100.
4. optical waveguide structure integrated on the chip of Dispersion managed according to claim 1, it is characterised in that, described substrate is hollow structure.
5. optical waveguide structure integrated on the chip of Dispersion managed according to claim 1, it is characterised in that, the bottom of described substrate is provided with recessed groove.
6. optical waveguides Dispersion managed method integrated on a chip, it is characterised in that, utilize optical waveguide structure integrated on chip as claimed in claim 1, first, by the one of the optical waveguides preset group of parameters of structural dimension, calculate a shape of a saddle dispersion curve; Then, by the one or more parameters in the height adjusting waveguide core region and the width of substrate contact surface, the height of high-index material and low-index material, thus realizing Dispersion managed, particular content is as follows:
By increasing the height of high-index material so that the direction that shape of a saddle dispersion curve crossed disperstion value increases is moved, and the displacement amount at left peak is greater than the displacement amount of right forward;
By increasing the height of low-index material so that the direction that shape of a saddle dispersion curve crossed disperstion value reduces is moved, and the displacement amount at left peak is less than the displacement amount of right forward;
By increasing the width of waveguide core region and substrate contact surface so that shape of a saddle dispersion curve is around being a bit rotated counterclockwise within the scope of this dispersion curve trench.
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Cited By (5)
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| CN107490825A (en) * | 2017-09-13 | 2017-12-19 | 吉林大学 | Half hanging arsenones slab waveguide with superelevation stimulated Brillouin scattering gain and preparation method thereof |
| CN108415122A (en) * | 2018-01-27 | 2018-08-17 | 天津大学 | A kind of control waveguide of wide band dispersion and control method |
| JP2018146669A (en) * | 2017-03-02 | 2018-09-20 | 富士通株式会社 | Optical semiconductor and manufacturing method thereof |
| CN110945316A (en) * | 2017-07-20 | 2020-03-31 | Fogale 纳米技术公司 | Multi-channel confocal sensor for inspecting a sample and related method |
| CN111090146A (en) * | 2019-11-22 | 2020-05-01 | 天津大学 | Broadband temperature-insensitive and low-dispersion lithium niobate optical waveguide structure and application thereof |
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| JP2018146669A (en) * | 2017-03-02 | 2018-09-20 | 富士通株式会社 | Optical semiconductor and manufacturing method thereof |
| CN110945316A (en) * | 2017-07-20 | 2020-03-31 | Fogale 纳米技术公司 | Multi-channel confocal sensor for inspecting a sample and related method |
| CN110945316B (en) * | 2017-07-20 | 2021-11-09 | 统一半导体公司 | Multi-channel confocal sensor for inspecting a sample and related method |
| CN107490825A (en) * | 2017-09-13 | 2017-12-19 | 吉林大学 | Half hanging arsenones slab waveguide with superelevation stimulated Brillouin scattering gain and preparation method thereof |
| CN107490825B (en) * | 2017-09-13 | 2019-05-21 | 吉林大学 | Half hanging arsenones slab waveguide with superelevation stimulated Brillouin scattering gain and preparation method thereof |
| CN108415122A (en) * | 2018-01-27 | 2018-08-17 | 天津大学 | A kind of control waveguide of wide band dispersion and control method |
| WO2019144903A1 (en) * | 2018-01-27 | 2019-08-01 | 天津大学 | Broadband dispersion control waveguide and control method |
| CN108415122B (en) * | 2018-01-27 | 2020-05-29 | 天津大学 | Broadband dispersion control waveguide and control method |
| EP3745172A4 (en) * | 2018-01-27 | 2021-10-13 | Tianjin University | Broadband dispersion control waveguide and control method |
| US11169324B2 (en) * | 2018-01-27 | 2021-11-09 | Tianjin University | Broadband dispersion controlling waveguide and controlling method |
| CN111090146A (en) * | 2019-11-22 | 2020-05-01 | 天津大学 | Broadband temperature-insensitive and low-dispersion lithium niobate optical waveguide structure and application thereof |
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