CN105624639A - Brushing method for reaction chamber upper cover of metal organic matter chemical vapor deposition system - Google Patents
Brushing method for reaction chamber upper cover of metal organic matter chemical vapor deposition system Download PDFInfo
- Publication number
- CN105624639A CN105624639A CN201610087408.6A CN201610087408A CN105624639A CN 105624639 A CN105624639 A CN 105624639A CN 201610087408 A CN201610087408 A CN 201610087408A CN 105624639 A CN105624639 A CN 105624639A
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- CN
- China
- Prior art keywords
- upper cover
- reaction chamber
- chamber upper
- reative cell
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The invention discloses a brushing method for a reaction chamber upper cover of a metal organic matter chemical vapor deposition system. The brushing method comprises the steps that after growing of an epitaxial slice in a reaction chamber of the metal organic matter chemical vapor deposition system is completed, the temperature of circulating water entering the reaction chamber upper cover is reduced, the reaction chamber upper cover is made to be at the constant temperature of 20-30 DEG C, and then attachments on the reaction chamber upper cover are brushed linearly in one direction through a bristle brush. Due to the fact that the surface temperature of the reaction chamber upper cover is reduced, the temperature of the attachments attached to the reaction chamber upper cover is reduced, and the situation that the attachments tend to be in a liquid state is changed to the situation that the attachments tend to be in a solid state, so that the attachments are easy to brush away, cannot adhere to the bristle brush and also cannot block a small hole of the reaction chamber upper cover. According to the brushing method for the reaction chamber upper cover of the metal organic matter chemical vapor deposition system, by reducing the temperature of the reaction chamber upper cover, the temperature of the attachments on the reaction chamber upper cover is reduced, so that the attachments tend to be in the solid state and are easy to brush away; therefore, the attachments are prevented from being in the liquid state, being liable to be adhered to the bristle brush and blocking the small hole of the reaction chamber upper cover, meanwhile, the reaction chamber upper cover is relatively brushed cleanly, and the brushing efficiency is improved.
Description
Technical field
The present invention relates to a kind of for cleaning the method for reative cell upper cover (SHOWERHEAD) in metal organic chemical vapor deposition system (AIXTRONCRIUSIIMOCVD) with water, to improve its cleanliness factor and to clean efficiency with water, belong to the Removal Technology field of shower nozzle in metal organic chemical vapor deposition system.
Background technology
Metal organic chemical vapor deposition equipment production firm of Germany likes that the key component thinking CRIUSII type metal organic chemical vapor deposition (MOCVD) system that strong (AIXTRON) produces is reative cell, all of all peripheries are all reative cell work, reaction raw material therein, all entering reactor chamber from the aperture that reative cell upper cover is tiny including MO source and special gas, the standard aperture that reative cell covers is as shown in Figure 1. Under specific pressure and temperature, in reactor chamber, there is chemical reaction, form compound, be re-depositing on sapphire (Al2O3) on substrate, just create the product-epitaxial wafer of extension. Epitaxial process is covered with whole cavity environment after the raw material generation chemical reaction of reative cell, causes that a large amount of reaction residue is attached to around reative cell upper lid surface and surface aperture, as shown in Figure 2. Aperture owing to covering on reative cell is too little (diameter 0.6mm), it is very easy to be blocked by raw material, so MOCVD manufacturer requires that every furnace superintendent needs to brush off the attachment covered on reative cell with hairbrush after complete, thus preventing the aperture covered on reative cell blocked, the complete brush reative cell upper cover of every furnace superintendent, can also reach to prevent reative cell upper lid surface from having attachment, affect MOCVD and carry the reflectance of Laser Detecting Set epi-tt, and then affect graphite pallet temperature sensing, affect the repeatability of epitaxial growth temperature.
In epitaxial layer growth process, reactor chamber temperature is higher, for ensureing reative cell upper cover temperature constant, MOCVD system increases water circle device to reative cell upper cover, the steady temperature of recirculated water is set as 50 DEG C, namely the circulating water temperature entering reative cell upper cover is always constant in 50 DEG C, in certain growth course, reaction chamber temperature is significantly high, go out the water temperature of reative cell upper cover certainly higher than 50 DEG C, the growth of every stove needs to open reative cell upper cover after terminating, carry out taking epitaxial wafer, then with hairbrush brush reative cell upper lid surface, the attachment of cleaning reaction room upper lid surface, in the attachment process of cleaning reaction room upper lid surface, owing to the temperature of reative cell upper cover is higher, it is about 50��70 DEG C, the attachment of reative cell upper lid surface is substantially in the state of viscous liquid, use hairbrush brush, it is very easy to stick with paste attachment on the aperture of reative cell upper cover, cause aperture clogs, and attachment cannot be cleaned down completely, if the attachment of reative cell upper lid surface cannot be brushed off always, aperture thereon slowly will be blocked, MO source and special gas just cannot flow into reative cell by aperture, can cause that epitaxial wafer growth is uneven, epi-tt reflectance can be influenced by impact, the detection of epitaxial wafer surface temperature is inaccurate, cause temperature control sideslip, the growth temperature of the even whole each layer of epitaxial wafer is abnormal, can cause time serious that whole stove epitaxial wafer surface atomizing is scrapped, if reative cell upper cover brush is unclean, reative cell upper cover harm itself is also very big, if reative cell upper cover aperture clogs is too much, it whole must be pulled down, and take apart and be carried out, key issue is that to have cleaned rear recovery time long especially, also can result in the serious consequence forever cannot recovered once in a while.
It is all clean reative cell upper cover with water when constant temperature 50 DEG C at present, but the compound of reative cell upper lid surface is inclined liquid condition, owing to temperature is higher, brushes with hairbrush one, be very easy on blocking reative cell the aperture covered.
Summary of the invention
The present invention is directed to the deficiency that the technology of cleaning with water of reative cell upper cover in existing metal organic chemical vapor deposition system exists, it is provided that a kind of clean reative cell upper cover in metal organic chemical vapor deposition system effective, that efficiency is high with water clean method with water.
Current photovoltaic industry producer is operationally, it it is all also constant temperature brush reative cell upper cover, when namely during normal growth, the process cycles coolant-temperature gage of reative cell upper cover is with brush reative cell upper cover, the temperature of process recycled water is the same, reative cell upper cover and the attachment temperature above covered are all that comparison is high, this temperature is with big hairbrush brush reative cell upper cover, a big chunk of attachment adheres to again on reative cell and covers, do not brushed off at all, brush and rear reative cell has covered bright one layer attachment, after of long duration, reative cell upper cover can produce a thick layer of material being made up of attachment.
In the metal organic chemical vapor deposition system of the present invention reative cell upper cover clean method with water, be:
After the epitaxial wafer growth of metal organic chemical vapor deposition system response indoor terminates, it is lowered into the process cycles coolant-temperature gage of reative cell upper cover, make reative cell upper cover constant temperature at 20��30 DEG C, attachment is solid states, with special big hairbrush according to from remote namely near, straight line cleans the attachment of reative cell upper cover with water in the horizontal direction.
Process cycles coolant-temperature gage owing to entering reative cell upper cover reduces, the temperature causing reative cell upper lid surface reduces, it is attached to the attachment temperature covered on reative cell to reduce, attachment is become by trending towards liquid and trends towards solid-state, and the hardness of attachment is greatly improved, and such attachment is not easy to be deformed, it is also easier to be brushed off, will not adhering on hairbrush, without the aperture of blocking reative cell upper cover, it is cleaner that reative cell upper cover is also brushed.
The present invention is by reducing the temperature of reative cell upper cover itself, reduce the temperature of reative cell upper cover attachment, make attachment trend towards solid-state and easily be brushed off, it is therefore prevented that to adhere on hairbrush and the aperture clogs that will cover on reative cell, that cleans with water is relatively clean simultaneously, improves and cleans efficiency with water. Reative cell upper cover is more clean, the difference of each brush upper cover is more little, the temperature of follow-up heat would not be affected, also the concordance of brush reative cell upper cover is improved, the impact of front and back heat is diminished relatively, and the repeatability between heat can be more high, to the consistent wavelength improving product, surface conformance, electrical quantity concordance all benefits.
Accompanying drawing explanation
Fig. 1 is the standard aperture schematic diagram covered on reative cell.
Fig. 2 is the schematic diagram that the indivedual aperture of reative cell upper lid surface after growth terminates is blocked.
Detailed description of the invention
In the metal organic chemical vapor deposition system of the present invention, reative cell upper cover cleans method with water, it it is the circulating water temperature by being lowered into reative cell upper cover, make the constant temperature of reative cell upper cover own at 20��30 DEG C, then clean with water with hairbrush, owing to the temperature of reative cell upper lid surface reduces, it is attached to the attachment temperature covered on reative cell to reduce, attachment is become by trending towards liquid and trends towards solid-state, such attachment is easy for being brushed off, will not adhere on hairbrush, without the aperture clogs that will cover on reative cell. Can be undertaken by step in detail below:
Open reative cell upper cover, take out epitaxial wafer, when then waiting circulating water temperature constant between 20��30 DEG C, clean surface with water with big hairbrush and turn white reative cell upper cover, when cleaning with water, firmly want equilibrium, must by certain direction brush straight line brush, brush three times, now reative cell upper lid surface is entirely without the attachment turned white, after having brushed, it is ready for the growth of next stove, is so circulated operation.
(1), after every stove LED structure growth terminates, manually the temperature of water circle device (chiller) is set as 20��30 DEG C by 50 DEG C.
(2) press " OPEN " button on the left of glove box, open reative cell upper cover.
(3) draw the epitaxial wafer grown by wand, put in the box of epitaxial wafer.
(4) with small brushes, the attached crop produced on graphite pallet is brushed off, will clean with water clean, particularly pallet be put in the groove of substrate.
(5) circulating water temperature of the circulating water device of question response room upper cover is constant, and the constant temperature of reative cell upper cover own is after 20��30 DEG C.
(6) the vacuum cleaner switch in glove box is opened, reative cell upper lid surface is cleaned with water with big hairbrush, horizontal direction, from far namely closely cleaning with water, equilibrium is firmly wanted during brush upper cover, at least brush three times, any field color of the reative cell upper cover after brush is all consistent, and the white attachment of reative cell upper lid surface is all brushed off.
(7) new substrate is installed in the groove of pallet.
(8) press " CLOSE " button on the left of glove box, close reative cell upper cover.
(9) program of transferring carries out the growth of next stove.
(10) growth terminates the above-mentioned circulation operation of laggard row.
Claims (1)
1. in metal organic chemical vapor deposition system reative cell upper cover clean a method with water, it is characterized in that:
The epitaxial wafer growth of metal organic chemical vapor deposition system response indoor is lowered into the circulating water temperature of reative cell upper cover, makes reative cell upper cover constant temperature at 20��30 DEG C, then clean the attachment of reative cell upper cover with hairbrush according to a direction straight line with water after terminating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610087408.6A CN105624639A (en) | 2016-02-16 | 2016-02-16 | Brushing method for reaction chamber upper cover of metal organic matter chemical vapor deposition system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610087408.6A CN105624639A (en) | 2016-02-16 | 2016-02-16 | Brushing method for reaction chamber upper cover of metal organic matter chemical vapor deposition system |
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| CN105624639A true CN105624639A (en) | 2016-06-01 |
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| CN201610087408.6A Pending CN105624639A (en) | 2016-02-16 | 2016-02-16 | Brushing method for reaction chamber upper cover of metal organic matter chemical vapor deposition system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112111727A (en) * | 2019-06-21 | 2020-12-22 | 山东华光光电子股份有限公司 | Method for rapidly recovering MOCVD upper cover after maintenance |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204039496U (en) * | 2014-07-01 | 2014-12-24 | 圆融光电科技有限公司 | For clearing up the sedimental cleaning plant of MOCVD device |
| CN204298457U (en) * | 2014-11-25 | 2015-04-29 | 聚灿光电科技股份有限公司 | A kind of gaseous phase deposition equipment spray head cleaning device |
-
2016
- 2016-02-16 CN CN201610087408.6A patent/CN105624639A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204039496U (en) * | 2014-07-01 | 2014-12-24 | 圆融光电科技有限公司 | For clearing up the sedimental cleaning plant of MOCVD device |
| CN204298457U (en) * | 2014-11-25 | 2015-04-29 | 聚灿光电科技股份有限公司 | A kind of gaseous phase deposition equipment spray head cleaning device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112111727A (en) * | 2019-06-21 | 2020-12-22 | 山东华光光电子股份有限公司 | Method for rapidly recovering MOCVD upper cover after maintenance |
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Application publication date: 20160601 |
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