CN105624509A - Preparing method of electronic packaging material - Google Patents
Preparing method of electronic packaging material Download PDFInfo
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- CN105624509A CN105624509A CN201510971757.XA CN201510971757A CN105624509A CN 105624509 A CN105624509 A CN 105624509A CN 201510971757 A CN201510971757 A CN 201510971757A CN 105624509 A CN105624509 A CN 105624509A
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- China
- Prior art keywords
- electronic package
- preparation
- package material
- powder
- alloy powder
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/065—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on SiC
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
- C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
Abstract
The invention provides a preparing method of an electronic packaging material. The electronic packaging material is composed of a base body and a reinforcement body; the base body comprises an aluminum alloy, and the reinforcement body comprises graphene oxide and SiC particles and comprises, by mass percentage, 2% of graphene oxide, 50% of SiC particles and the balance aluminum alloy powder; and the aluminum alloy powder comprises 70% of Al-Si, 10% of Al-Ti-B, 10% of Al-Be and 10% of Al powder. By the adoption of the method, the light electronic packaging material with the density lower than 3.1g/cm<3> and thermal conductivity larger than 180 W/(m K) can be prepared, and therefore the comprehensive performance of a military electronic device can be greatly improved; and the preparing method is suitable for producing and preparing of packaging materials of portable devices, military power hybrid circuits of aerospace and other fields sensitive to weight, carriers of microwave tubes, and heat-sink and super-power modules of a multi-chip assembly.
Description
Technical field
The preparation method that the present invention relates to a kind of encapsulating material, the preparation method being specifically related to the electronic package material that alloy matrix aluminum, graphene oxide and SiC particulate are reinforcement.
Background technology
Electronic package material refers to the seal of integrated circuit; chip is not only had mechanical support and Environmental Role by it; it is made to avoid the pollution of the steam in air, impurity and various chemical atmosphere and erosion; so that IC chip can play consistently normal electrical airway dysfunction, hot property or even the reliability of electronic device and circuit are played very important effect by encapsulating material. Now, electricity encapsulating material industry has become an important branch in semicon industry, and it has related generally to multiple subjects such as chemistry, electricity, thermodynamics, machinery and process equipments.
As the enhancing thing of metal-base composites, SiC particulate has high-modulus, high rigidity, low-thermal-expansion, high heat conductance, wide material sources and the advantage such as with low cost. Al alloy has that low-density, high heat conductance (170-220W/m K) be cheap and the advantage such as hot-working is easy. Comprehensive factors above, and consider that electronic package material must possess thermal coefficient of expansion (CTE) that is very low and that mate with substrate, high thermal conductivity, high rigidity, low-density, and the characteristic such as low cost, the two is composited after particle enhanced aluminum-based composite material, the advantage that material is provided with both Al and SiC, almost represent all properties requirement of desirable encapsulating material, this makes SiC/Al composite become in metal-base composites used for electronic packaging to attract tremendous attention most, potential most widely used composite.
Graphene is material (Young's modulus 1.7TPa) the firmest in the world, and theoretical specific surface area is up to 2630m2/ g, has electron mobility (200000cm at a high speed under good heat conductivity (5000W/ (m.k)) and room temperature2/ (V.s)). Meanwhile, the structure of its uniqueness makes it have the special character such as perfect quantum hall effect, unique quantum tunneling effect, ambipolar electric field effect. Due to the performance that Graphene is excellent, great specific surface area and relatively low production cost (relative to CNT); Connection between each carbon atom of Graphene is very pliable and tough, and when applying external mechanical force, carbon atom face flexural deformation will adapt to external force, without making carbon atom rearrange, thus maintains stablizing of structure. Based on these excellent performances of Graphene, being made electronic package material if be added in metallic aluminium or copper, the electrical conductivity of material will be greatly improved; Graphene density is little, and the density ratio metallic matrix of the composite obtained is low; Thermal coefficient of expansion is little; Solve the boundary moisture problem in electronic packaging composite material simultaneously, advantageously reduce interface resistance; It is prone to processing. Therefore, Graphene metal-base composites has broad application prospects for Electronic Packaging field.
Existing SiC/Al composite electronic package material mainly adopts macerate method manufacture, it is at heat conductivility, manufacturing process and welding performance are all sent one's regards to topic, particularly it is difficult to adopt the existing welded encapsulation of China to weld, limit the application in China's Connectors for Active Phased Array Radar of such material, it is necessary to a kind of novel encapsulating material makes up the deficiency of traditional material. Graphene possesses splendid heat conductivity, the electronic package material being compounded to form by Graphene and Al/SiC, not only keeps respective performance advantage, and the heat conductivility of material is greatly improved, and had in manufacturing process and welding performance and be obviously improved, will be expected to become a new generation's electronic package material.
Summary of the invention
The present invention provides a kind of controlled solderable electronic package material of high heat conduction of linear expansion coefficient, is by being mixed by the carrying out of certain proportion graphene oxide, SiC and Al alloy powder, is prepared from then through ermal physics sintering. Adopt the present invention can prepare density lower than 3.1g/cm3, the thermal conductivity light electronic packaging material more than 180W/ (m K), thus increasing substantially the combination property of the Military Electronic Equipment such as China's Connectors for Active Phased Array Radar.
For achieving the above object, the present invention is by the following technical solutions:
A kind of electronic package material, it is made up of matrix and reinforcement, described matrix includes aluminum and Al alloy powder, and described reinforcement includes graphene oxide and SiC particulate, according to mass percent, described graphene oxide is 0.5%��3%, described SiC particulate is 35%��65%, and surplus is Al alloy powder, and described Al alloy powder is containing 70%Al-Si, 10%Al-Ti-B, 10%Al-Be and 10%Al powder.
First preferred version of a kind of electronic package material, in Al-Si alloy powder, the content of Si is 30%��50%, and in described Al-Ti-B alloy powder, the content of Ti is 4%��6%, and in described Al-Be alloy powder, the content of Be is 0.1%��0.3%.
Second preferred version of a kind of electronic package material, in Al-Si alloy powder, the content of Si is 35%��45%, and in described Al-Ti-B alloy powder, the content of Ti is 4.5%��5.5%, and in described Al-Be alloy powder, the content of Be is 0.15%��0.25%.
3rd preferred version of a kind of electronic package material, in Al-Si alloy powder, the content of Si is 40%, and in described Al-Ti-B alloy powder, the content of Ti is 5%, and in described Al-Be alloy powder, the content of Be is 0.2%.
4th preferred version of a kind of electronic package material, graphene oxide is 1%��2%, and described SiC particulate is 40%��60%.
5th preferred version of a kind of electronic package material, graphene oxide is 1.5%, and described SiC particulate is 50%.
The preparation method of a kind of electronic package material comprises the steps:
(1) mixed-powder is prepared;
(2) jacket is prepared;
(3) physics sintering.
First preferred version of the preparation method of a kind of electronic package material, step (1) adopts wet-mixed and dry mixed successively.
A kind of second preferred version of the preparation method of electronic package material, wet massing time is 4��14h, and mixing speed is 10��30 revs/min; The described dry mixed time is 4��14h, and mixing speed is 10��30 revs/min.
A kind of 3rd preferred version of the preparation method of electronic package material, wet massing time is 10h, and mixing speed is 20 revs/min; The described dry mixed time is 8h, and mixing speed is 20 revs/min.
4th preferred version of the preparation method of a kind of electronic package material, the material of step (2) is LF21 aluminium alloy.
5th preferred version of the preparation method of a kind of electronic package material, in step (3), the pressure of physics sintering is 90MPa��300MPa, and temperature is 400 DEG C��500 DEG C, and the time is 30 minutes��2 hours.
6th preferred version of the preparation method of a kind of electronic package material, pressure is 200MPa, and temperature is 470 DEG C, and the time is 1.5 hours.
Compared with immediate prior art, the excellent effect of the present invention is as follows:
1, design of material is strong, can prepare series of products as required. The present invention adopts powder metallurgy mode, it may be achieved material physical properties, particularly linear expansion coefficient can be designed according to material composition.
2, good welding performance. electronic package material prepared by the present invention, by regulating SiC particulate size, Al alloy powder composition, and add grapheme material at material, the electronic package material adopting preparation method of the present invention to obtain is made not only to possess the advantage that SiC/Al base composite electric encapsulating material heat conductivity is high and with low cost, change the sub-encapsulating material machining difficulty of conventional SiC/Al base composite electric simultaneously, the shortcoming being difficult to solder to, it is made to be particularly suitable for current China electronics industry state of art, the reliability and integration degree improving the military electronic devices such as China's Connectors for Active Phased Array Radar is significant, reach the international leading level
3, production cost is low, it is easy to realize preparation of industrialization, and operating procedure is easy simultaneously, is beneficial to production control. Therefore, the present invention adopts the aluminium base electronic packaging composite material of silicon-carbide particle of low cost for the encapsulating housing of the electronic devices such as Aero-Space microwave and module or base, not only can produce significant military benefit, also will bring considerable economic benefit and social benefit.
Detailed description of the invention
Below in conjunction with embodiment, technical scheme is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments. Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art obtain under not making creative work premise, broadly fall into the scope of protection of the invention.
In parts by weight, graphene oxide is 2%, and SiC particulate is 50%, and surplus is Al alloy powder, and described Al alloy powder is containing 70%Al-Si, 10%Al-Ti-B, 10%Al-Be and 10%Al powder. Preparation process is as follows:
(1) alcoholic solution of graphene oxide is prepared: mixed by the ethanol of the graphene oxide of 1 volume and 10 volumes and use ultrasonic disperse;
(2) by the graphene oxide alcoholic solution of preparation, SiC particulate, Al-Si Al alloy powder addition V-type mixing equipment carries out wet-mixed, mixes 10 hours, rotating speed 20 revs/min;
(3) mixed-powder of above-mentioned acquisition is dried, pour into after drying and V-type mixing equipment carries out dry mixed, mix 8 hours, rotating speed 20 revs/min.
(4) adopting 2mm thickness aluminium alloy to prepare �� 230mm �� 200mm jacket, total filling weight controls at 14 kilograms��15 kilograms.
(5) powder mixed is loaded in jacket, it is desirable to powder tap density reaches more than 1.7g/cm3��
(6) powder installing jacket being carried out physics sintering, pressure is 200MPa, temperature 470 DEG C, 1.5 hours time.
Under different preparation conditions, electronic package material main performance is in Table 1.
Table 1 heterogeneity electronic package material main performance contrasts
The data of table 1 illustrate electronic package material low-density prepared by the inventive method, high coefficient of heat transfer, and linear expansion coefficient is controlled and is prone to welding.
Above example is only in order to illustrate that technical scheme is not intended to limit; those of ordinary skill in the field are to be understood that; the specific embodiment of the present invention can being modified with reference to above-described embodiment or equivalent replacement, these are all being applied within the claims awaited the reply without departing from any amendment or equivalent replacement of spirit and scope of the invention.
Claims (7)
1. the preparation method of an electronic package material, it is characterized in that, according to mass percent, it is 2% that described encapsulating material includes graphene oxide, and SiC particulate is 50%, and surplus is Al alloy powder, described Al alloy powder is containing containing 70%Al-Si, 10%Al-Ti-B, 10%Al-Be and 10%Al powder, preparation method comprises the steps:
(1) mixed-powder is prepared;
(2) jacket is prepared;
(3) physics sintering.
2. the preparation method of a kind of electronic package material according to claim 1, it is characterised in that described step (1) adopts wet-mixed and dry mixed successively.
3. the preparation method of a kind of electronic package material according to claim 2, it is characterised in that described wet massing time is 4��14h, mixing speed is 10��30 revs/min; The described dry mixed time is 4��14h, and mixing speed is 10��30 revs/min.
4. the preparation method of a kind of electronic package material according to claim 3, it is characterised in that described wet massing time is 10h, mixing speed is 20 revs/min; The described dry mixed time is 8h, and mixing speed is 20 revs/min.
5. the preparation method of a kind of electronic package material according to claim 1, it is characterised in that the material of described step (2) is LF21 aluminium alloy.
6. the preparation method of a kind of electronic package material according to claim 1, it is characterised in that in described step (3), the pressure of physics sintering is 90MPa��300MPa, and temperature is 400 DEG C��500 DEG C, and the time is 30 minutes��2 hours.
7. the preparation method of a kind of electronic package material according to claim 6, it is characterised in that described pressure is 200MPa, temperature is 470 DEG C, and the time is 1.5 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510971757.XA CN105624509A (en) | 2015-12-22 | 2015-12-22 | Preparing method of electronic packaging material |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510971757.XA CN105624509A (en) | 2015-12-22 | 2015-12-22 | Preparing method of electronic packaging material |
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| CN105624509A true CN105624509A (en) | 2016-06-01 |
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| CN201510971757.XA Pending CN105624509A (en) | 2015-12-22 | 2015-12-22 | Preparing method of electronic packaging material |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449952A (en) * | 2016-10-09 | 2017-02-22 | 常州市鼎日环保科技有限公司 | Preparation method for LED packaging material |
| CN109112364A (en) * | 2018-10-19 | 2019-01-01 | 湖南金天铝业高科技股份有限公司 | A kind of Aluminum Matrix Composites Strengthened by SiC used for electronic packaging and preparation method |
| CN110551923A (en) * | 2019-10-08 | 2019-12-10 | 中南大学 | Preparation method of aluminum-based composite material |
Citations (4)
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| CN1830602A (en) * | 2006-04-14 | 2006-09-13 | 北京有色金属研究总院 | Preparation method of high heat conductive SiCp/Al electronic packaging material |
| CN1877821A (en) * | 2006-06-30 | 2006-12-13 | 中南大学 | Process for preparing silumin electronic package materials |
| CN103103403A (en) * | 2013-01-24 | 2013-05-15 | 西安交通大学 | Electronic packaging material |
| CN104388725A (en) * | 2014-12-11 | 2015-03-04 | 成都明日星辰科技有限公司 | Preparation method of high-performance SiC/Al composite material used for electronic packaging |
-
2015
- 2015-12-22 CN CN201510971757.XA patent/CN105624509A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1830602A (en) * | 2006-04-14 | 2006-09-13 | 北京有色金属研究总院 | Preparation method of high heat conductive SiCp/Al electronic packaging material |
| CN1877821A (en) * | 2006-06-30 | 2006-12-13 | 中南大学 | Process for preparing silumin electronic package materials |
| CN103103403A (en) * | 2013-01-24 | 2013-05-15 | 西安交通大学 | Electronic packaging material |
| CN104388725A (en) * | 2014-12-11 | 2015-03-04 | 成都明日星辰科技有限公司 | Preparation method of high-performance SiC/Al composite material used for electronic packaging |
Non-Patent Citations (1)
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| 王渠东: "《轻合金及其工程应用》", 30 September 2015, 机械工业出版社 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106449952A (en) * | 2016-10-09 | 2017-02-22 | 常州市鼎日环保科技有限公司 | Preparation method for LED packaging material |
| CN109112364A (en) * | 2018-10-19 | 2019-01-01 | 湖南金天铝业高科技股份有限公司 | A kind of Aluminum Matrix Composites Strengthened by SiC used for electronic packaging and preparation method |
| CN109112364B (en) * | 2018-10-19 | 2020-05-22 | 湖南金天铝业高科技股份有限公司 | Silicon carbide reinforced aluminum-based composite material for electronic packaging and preparation method thereof |
| CN110551923A (en) * | 2019-10-08 | 2019-12-10 | 中南大学 | Preparation method of aluminum-based composite material |
| CN110551923B (en) * | 2019-10-08 | 2020-10-13 | 中南大学 | Preparation method of aluminum-based composite material |
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Application publication date: 20160601 |
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