CN105568067A - Electronic packaging material - Google Patents
Electronic packaging material Download PDFInfo
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- CN105568067A CN105568067A CN201510971374.2A CN201510971374A CN105568067A CN 105568067 A CN105568067 A CN 105568067A CN 201510971374 A CN201510971374 A CN 201510971374A CN 105568067 A CN105568067 A CN 105568067A
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- packaging material
- electronic packaging
- electronic package
- package material
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/05—Mixtures of metal powder with non-metallic powder
- C22C1/051—Making hard metals based on borides, carbides, nitrides, oxides or silicides; Preparation of the powder mixture used as the starting material therefor
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/02—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides
- C22C29/06—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds
- C22C29/065—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on carbides or carbonitrides based on carbides, but not containing other metal compounds based on SiC
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0005—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with at least one oxide and at least one of carbides, nitrides, borides or silicides as the main non-metallic constituents
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
- C22C32/0047—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents
- C22C32/0052—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides
- C22C32/0063—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ with carbides, nitrides, borides or silicides as the main non-metallic constituents only carbides based on SiC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Alloys Or Alloy Compounds (AREA)
Abstract
The invention provides an electronic packaging material which comprises a matrix and a reinforcement body. The matrix comprises aluminum alloy, and the reinforcement body comprises graphene oxide and SiC particles. The electronic packaging material is characterized in that the electronic packaging material comprises, by weight, 0.5%-3% of the graphene oxide, 35%-65% of the SiC particles and the balance aluminum alloy powder; the aluminum alloy powder comprises 70% of Al-Si, 10% of Al-Ti-B, 10% of Al-Be and 10% of Al powder. The electronic packaging material has the advantages that the density of the light electronic packaging material is lower than 3.1g/cm<3>, the heat conductivity of the light electronic packaging material is higher than 180 W/(m K), accordingly, the comprehensive performance of military electronic equipment can be greatly improved, and the electronic packaging material is applicable to producing and preparing portable devices, military power hybrid circuits in the field of aviation and aerospace and other light-sensitive fields, carriers for microwave tubes and packaging materials for heat-sink and super-high-power modules of multi-chip assemblies.
Description
Technical field
The present invention relates to a kind of packaged material, be specifically related to alloy matrix aluminum, graphene oxide and SiC particle are the electronic package material of reinforcement.
Background technology
Electronic package material refers to the sealing member of unicircuit; it not only has mechanical support and Environmental Role to chip; make its pollution avoiding the steam in air, impurity and various chemical atmosphere and erosion; thus making integrated circuit (IC) chip can play consistently normal electrical airway dysfunction, packaged material plays a part very important to the thermal characteristics of electron device and circuit and even reliability.Now, electricity packaged material industry has become important branch in semicon industry, and it has related generally to the multiple subjects such as chemistry, electricity, thermodynamics, machinery and processing unit.
As the reinforce of metal-base composites, SiC particle has high-modulus, high rigidity, low-thermal-expansion, high heat conductance, wide material sources and the advantage such as with low cost.Al alloy has the advantages such as the cheap and hot-work of low density, high heat conductance (170-220W/mK) is easy.Comprehensive above factor, and consider that electronic package material must possess the very low and thermal expansivity (CTE) mated with substrate, high thermal conductivity, high rigidity, low density, and the characteristic such as low cost, the two is composited after particle enhanced aluminum-based composite material, material is provided with the advantage of both Al and SiC, almost represent all properties requirement of desirable packaged material, this makes SiC/Al matrix material become in metal-base composites used for electronic packaging to attract tremendous attention most, potential most widely used matrix material.
Graphene is material (Young's modulus 1.7TPa) the firmest in the world, and theoretical specific surface area is up to 2630m
2/ g, has electronic mobility (200000cm at a high speed under good thermal conductivity (5000W/ (m.k)) and room temperature
2/ (V.s)).Meanwhile, the structure of its uniqueness makes it have special character such as perfect quantum hall effect, unique quantum tunneling effect, ambipolar electric field effect etc.Due to the performance of Graphene excellence, great specific surface area and lower production cost (relative to carbon nanotube); Connection between each carbon atom of Graphene is very pliable and tough, and when applying external mechanical force, carbon atom face flexural deformation will adapt to external force, and carbon atom need not be made to rearrange, and so just maintains the stable of structure.Based on these excellent performances of Graphene, made electronic package material if be added in metallic aluminium or copper, will greatly improve the specific conductivity of material; Graphene density is little, and the density ratio metallic matrix of the matrix material obtained is low; Thermal expansivity is little; Solve the boundary moisture problem in electronic packaging composite material simultaneously, be conducive to reducing interface resistance; Be easy to processing.Therefore, Graphene metal-base composites has broad application prospects for Electronic Packaging field.
Existing SiC/Al matrix material electronic package material mainly adopts the manufacture of maceration method, it is at heat conductivility, manufacturing process and welding property all send one's regards to topic, particularly be difficult to adopt the existing welded encapsulation of China to weld, limit the application of such material in China's Connectors for Active Phased Array Radar, need a kind of novel packaged material to make up the deficiency of traditional material.Graphene possesses splendid thermal conductivity, the electronic package material be compounded to form by Graphene and Al/SiC, not only keeps respective performance advantage, has increased substantially the heat conductivility of material, and had obvious improvement in manufacturing process and welding property, will be expected to become electronic package material of new generation.
Summary of the invention
The invention provides the controlled high heat conduction of a kind of linear expansivity and can weld electronic package material, is by being mixed by the carrying out of certain proportion graphene oxide, SiC and Al alloy powder, then is prepared from through ermal physics sintering.Adopt the present invention can prepare density lower than 3.1g/cm
3, thermal conductivity is greater than the light electronic packaging material of 180W/ (mK), thus increases substantially the over-all properties of the Military Electronic Equipment such as China's Connectors for Active Phased Array Radar.
For achieving the above object, the present invention is by the following technical solutions:
A kind of electronic package material, be made up of matrix and reinforcement, described matrix comprises aluminum and its alloy powder, and described reinforcement comprises graphene oxide and SiC particle, according to mass percent, described graphene oxide is 0.5% ~ 3%, described SiC particle is 35% ~ 65%, and surplus is Al alloy powder, and described Al alloy powder is containing 70%Al-Si, 10%Al-Ti-B, 10%Al-Be and 10%Al powder.
First preferred version of electronic package material, in Al-Si powdered alloy, the content of Si is 30% ~ 50%, and in described Al-Ti-B powdered alloy, the content of Ti is 4% ~ 6%, and in described Al-Be powdered alloy, the content of Be is 0.1% ~ 0.3%.
Second preferred version of electronic package material, in Al-Si powdered alloy, the content of Si is 35% ~ 45%, and in described Al-Ti-B powdered alloy, the content of Ti is 4.5% ~ 5.5%, and in described Al-Be powdered alloy, the content of Be is 0.15% ~ 0.25%.
3rd preferred version of electronic package material, in Al-Si powdered alloy, the content of Si is 40%, and in described Al-Ti-B powdered alloy, the content of Ti is 5%, and in described Al-Be powdered alloy, the content of Be is 0.2%.
4th preferred version of electronic package material, graphene oxide is 1% ~ 2%, and described SiC particle is 40% ~ 60%.
5th preferred version of electronic package material, graphene oxide is 1.5%, and described SiC particle is 50%.
A kind of preparation method of electronic package material comprises the steps:
(1) mixed powder is prepared;
(2) jacket is prepared;
(3) physics sintering.
The preparation method's of electronic package material first preferred version, step (1) adopts wet-mixed and dry mixed successively.
The preparation method's of electronic package material second preferred version, wet massing time is 4 ~ 14h, and stirring velocity is 10 ~ 30 revs/min; The described dry mixed time is 4 ~ 14h, and stirring velocity is 10 ~ 30 revs/min.
The preparation method's of electronic package material the 3rd preferred version, wet massing time is 10h, and stirring velocity is 20 revs/min; The described dry mixed time is 8h, and stirring velocity is 20 revs/min.
The preparation method's of electronic package material the 4th preferred version, the material of step (2) is LF21 aluminium alloy.
The preparation method's of electronic package material the 5th preferred version, in step (3), the pressure of physics sintering is 90MPa ~ 300MPa, and temperature is 400 DEG C ~ 500 DEG C, and the time is 30 minutes ~ 2 hours.
The preparation method's of electronic package material the 6th preferred version, pressure is 200MPa, and temperature is 470 DEG C, and the time is 1.5 hours.
Compared with immediate prior art, excellent effect of the present invention is as follows:
1, design of material is strong, can prepare series product as required.The present invention adopts powder metallurgy mode, and can realize material physical properties, particularly linear expansivity can design according to material composition.
2, good welding performance.Electronic package material prepared by the present invention, by regulating SiC particle size, Al alloy powder composition, and add grapheme material at material, the electronic package material adopting preparation method of the present invention to obtain is made not only to possess the high and with low cost advantage of SiC/Al base composite electric packaged material thermal conductivity, change the sub-packaged material machining difficulty of SiC/Al base composite electric in the past simultaneously, be difficult to the shortcoming of welding, it is made to be particularly suitable for current China electronic industry state of art, significant to the reliability and integration degree of improving the military electronic devices such as China's Connectors for Active Phased Array Radar, reach the international leading level
3, production cost is low, easily realizes preparation of industrialization, and operating procedure is easy simultaneously, is beneficial to production control.Therefore, the present invention adopts the aluminium base electronic packaging composite material of the silicon-carbide particle of low cost for the encapsulating housing of the electron devices such as aerospace microwave and module or base, not only significant military benefit be can produce, also will considerable economic benefit and social benefit be brought.
Embodiment
Below in conjunction with embodiment, be clearly and completely described technical scheme of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
By massfraction, graphene oxide is 0.5% ~ 3%, SiC particle is 35% ~ 65%, and surplus is Al alloy powder, and described Al alloy powder is containing 70%Al-Si, 10%Al-Ti-B, 10%Al-Be and 10%Al powder.Preparation process is as follows:
(1) ethanolic soln of graphene oxide is prepared: mixed and use ultrasonic disperse by the ethanol of the graphene oxide of 1 volume and 10 volumes;
(2) will the graphene oxide ethanolic soln of preparation, SiC particle, Al-Si Al alloy powder adds in V-type mixing equipment and carries out wet-mixed, mixes 10 hours, rotating speed 20 revs/min;
(3) mixed powder of above-mentioned acquisition is dried, pour into after oven dry in V-type mixing equipment and carry out dry mixed, mix 8 hours, rotating speed 20 revs/min.
(4) adopt the thick aluminum alloy of 2mm for Φ 230mm × 200mm jacket, total filling weight controls at 14 kilograms ~ 15 kilograms.
(5) powder mixed is loaded in jacket, require that powder tap density reaches and be greater than 1.7g/cm
3.
(6) powder installing jacket is carried out physics sintering, pressure is 200MPa, temperature 470 DEG C, 1.5 hours time.
Heterogeneity electronic package material salient features is in table 1, and the percentage composition in table is massfraction.
Table 1 heterogeneity electronic package material salient features contrasts
By the data display of table 1, absolutely prove that the electronic package material prepared through the inventive method possesses low density, high heat extraction coefficient, the controlled effect with being easy to weld of linear expansivity.
Above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit; those of ordinary skill in the field are to be understood that; can modify to the specific embodiment of the present invention with reference to above-described embodiment or equivalent to replace, these do not depart from any amendment of spirit and scope of the invention or equivalently to replace within the claims that all awaits the reply in application.
Claims (6)
1. an electronic package material, be made up of matrix and reinforcement, described matrix comprises aluminum and its alloy powder, and described reinforcement comprises graphene oxide and SiC particle, it is characterized in that, according to mass percent, described graphene oxide is 0.5% ~ 3%, and described SiC particle is 35% ~ 65%, surplus is Al alloy powder, described Al alloy powder is containing 70%Al-Si, 10%Al-Ti-B, 10%Al-Be and 10%Al powder.
2. a kind of electronic package material according to claim 1, it is characterized in that, in described Al-Si powdered alloy, the content of Si is 30% ~ 50%, and in described Al-Ti-B powdered alloy, the content of Ti is 4% ~ 6%, and in described Al-Be powdered alloy, the content of Be is 0.1% ~ 0.3%.
3. a kind of electronic package material according to claim 2, it is characterized in that, in described Al-Si powdered alloy, the content of Si is 35% ~ 45%, and in described Al-Ti-B powdered alloy, the content of Ti is 4.5% ~ 5.5%, and in described Al-Be powdered alloy, the content of Be is 0.15% ~ 0.25%.
4. a kind of electronic package material according to claim 3, is characterized in that, in described Al-Si powdered alloy, the content of Si is 40%, and in described Al-Ti-B powdered alloy, the content of Ti is 5%, and in described Al-Be powdered alloy, the content of Be is 0.2%.
5. a kind of electronic package material according to claim 1, is characterized in that, described graphene oxide is 1% ~ 2%, and described SiC particle is 40% ~ 60%.
6. a kind of electronic package material according to claim 5, is characterized in that, described graphene oxide is 1.5%, and described SiC particle is 50%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510971374.2A CN105568067A (en) | 2015-12-22 | 2015-12-22 | Electronic packaging material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510971374.2A CN105568067A (en) | 2015-12-22 | 2015-12-22 | Electronic packaging material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105568067A true CN105568067A (en) | 2016-05-11 |
Family
ID=55878680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510971374.2A Pending CN105568067A (en) | 2015-12-22 | 2015-12-22 | Electronic packaging material |
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| Country | Link |
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| CN (1) | CN105568067A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1830602A (en) * | 2006-04-14 | 2006-09-13 | 北京有色金属研究总院 | Preparation method of high heat conductive SiCp/Al electronic packaging material |
| CN1877821A (en) * | 2006-06-30 | 2006-12-13 | 中南大学 | Process for preparing silumin electronic package materials |
| CN103103403A (en) * | 2013-01-24 | 2013-05-15 | 西安交通大学 | Electronic packaging material |
| CN104388725A (en) * | 2014-12-11 | 2015-03-04 | 成都明日星辰科技有限公司 | Preparation method of high-performance SiC/Al composite material used for electronic packaging |
-
2015
- 2015-12-22 CN CN201510971374.2A patent/CN105568067A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1830602A (en) * | 2006-04-14 | 2006-09-13 | 北京有色金属研究总院 | Preparation method of high heat conductive SiCp/Al electronic packaging material |
| CN1877821A (en) * | 2006-06-30 | 2006-12-13 | 中南大学 | Process for preparing silumin electronic package materials |
| CN103103403A (en) * | 2013-01-24 | 2013-05-15 | 西安交通大学 | Electronic packaging material |
| CN104388725A (en) * | 2014-12-11 | 2015-03-04 | 成都明日星辰科技有限公司 | Preparation method of high-performance SiC/Al composite material used for electronic packaging |
Non-Patent Citations (3)
| Title |
|---|
| L.F. 蒙多尔福: "《铝合金的组织与性能》", 31 July 1988, 冶金工业出版社 * |
| 李隆盛: "《铸造铝合金及熔炼》", 30 November 1989, 机械工业出版社 * |
| 王渠东等: "《轻合金及其工程应用》", 30 September 2015, 机械工业出版社 * |
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Application publication date: 20160511 |
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| RJ01 | Rejection of invention patent application after publication |