CN105621344A - MEMS (Micro-Electromechanical System) hermetic packaging structure and method - Google Patents
MEMS (Micro-Electromechanical System) hermetic packaging structure and method Download PDFInfo
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- CN105621344A CN105621344A CN201610124077.9A CN201610124077A CN105621344A CN 105621344 A CN105621344 A CN 105621344A CN 201610124077 A CN201610124077 A CN 201610124077A CN 105621344 A CN105621344 A CN 105621344A
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- mems
- mems chip
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- conducting wire
- packaging structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
- B81C1/00698—Electrical characteristics, e.g. by doping materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
Abstract
The invention discloses an MEMS (Micro-Electromechanical System) hermetic packaging structure and method. The MEMS hermetic packaging structure comprises an MEMS chip and a cover, wherein a functional surface edge of the MEMS chip is provided with a bonding pad; the cover is used for sealing; a functional surface of the MEMS chip and a front side edge of the cover are bonded together through a polymer layer being of a certain width and a certain thickness; the surface of the bonding pad of the MEMS chip is covered with the polymer layer; a side face facing the outside of the MEMS chip of the bonding pad is connected with a conductive circuit leading to a back part of the MEMS chip; and a side face facing the outside of the chip of the polymer layer is covered with a metal block and the conductive circuit. According to the packaging structure, a metal encapsulation area of a product is increased during formation of the conductive circuit, so that high airtightness is realized, and process steps and the cost are not added or increased in a technological process. The MEMS hermetic packaging structure and method have the advantages of low cost, high reliability and the like.
Description
Technical field
The present invention relates to semi-conductor MEMS chip wafer-level packaging field, particularly relate to encapsulation structure and method for packing that a kind of metal parcel bonded interface realizes MEMS resistance to air loss.
Background technology
Along with the rise of thing networking and intelligent mobile terminal, the miniaturization of sensor and system integration demand so that encapsulation becomes more and more important, owing to MEMS package is complicated, in some MEMS product, packaging cost is up to 60%. Low cost and high performance encapsulation are the important guarantees realizing MEMS industrialization.
MEMS package can based on substrate, such as LGA package, based on framework, such as QFN encapsulation. Current MEMS package more and more adopts crystal wafer chip dimension (WLCSP) encapsulation. Wherein, the products such as image sensor, jerkmeter, gyro adopt 3DWLCSP, and this packaged type uses silicon through hole technology, achieves very big success.
Numerous MEMS product needs air-tight packaging. Usual air-tight packaging needs to use metal link, and anode linkage could realize. But technics comparing is complicated, cost compare height; Some product, takes encapsulation to complete the sealing of laggard row metal or parcel, increases the cost of encapsulation; Using polymer latex or dry film glass wafer and wafer bonding, cost is lower, but these bonding materials so that the resistance to air loss of device is difficult to ensure.
A lot of MEMS, such as jerkmeter, main purposes is the fields such as automotive electronics, so require high for this product reliability. Adopt the organic materials such as polymer latex, dry film to carry out wafer sealing, there is reliability result while reducing cost and do not meet the risk required.
Summary of the invention
In order to realize using polymer-bound to obtain good hermetic seal, the present invention proposes encapsulation structure and method for packing that a kind of metal parcel bonded interface realizes MEMS resistance to air loss, obtain good sealing effect, and technological process does not increase processing step and cost, achieve good stopping property, there is the advantage such as low cost and high reliability.
The technical scheme of the present invention is achieved in that
A kind of MEMS air-tight packaging structure, comprise a functional surfaces edge with welding the MEMS chip and padded for sealing the lid of this MEMS chip, the functional surfaces edge of described MEMS chip and the front edge of described lid are bonded together by the polymer layer of one fixed width and thickness, the outer side weld pad side of described MEMS chip is connected with the conducting wire leading to MEMS chip back or lid back, the area of the side at least 80% that described polymer layer exposes is by a metal block and described conducting wire sealed envelope, and the width of metal block at least wraps the side of this polymer layer exposure.
Further, described lid is middle part with the silicon plate of cavity or sheet glass.
Further, described polymer layer is glue or dry film.
Further, described conducting wire is a kind of single-layer metal structure in copper, nickel, gold, aluminium, nickel phosphorus, palladium and titanium or several multi-layer metal structures.
Further, described metal block is a kind of single-layer metal structure in copper, nickel, gold, aluminium, nickel phosphorus, palladium, titanium, chromium and iron or several multi-layer metal structures.
Further, it is coated with one layer of welding resisting layer outside described conducting wire, described metal block and exposed polymer layer.
Further, on the conducting wire at described MEMS chip back, preparation has weldering ball.
Further, described conducting wire is connected with described metal block or is not connected, and makes between each conducting wire electrically mutually isolated.
A method for packing for MEMS air-tight packaging structure, comprises the steps:
The disk and one that step 1, offer one have some MEMS chip has the lid sheet of some lids, between adjacent MEMS chip, there is cutting groove, the functional surfaces edge of each MEMS chip is with weldering pad, the front edge at the functional surfaces edge of MEMS chip and lid is bonded together by the polymer layer of one fixed width and thickness, and the weldering acting as a cushion face making MEMS chip is covered by this polymer layer;
Step 2, on disk cutting groove position etching, form the pad parts exposing MEMS chip and divide the groove in front;
Step 3, in groove and on the back of MEMS chip, lay passivation layer;
Step 4, by the mode of cut mechanically, come out in weldering pad side and polymer layer side;
Step 5, the conducting wire formed on described passivation layer on the back electrically causing described MEMS chip described weldering padded, form the metal block of at least 80% area of the polymer layer side that sealed envelope exposes simultaneously;
Step 6, being coated with one layer of welding resisting layer outside described conducting wire, described metal block and exposed polymer layer, on welding resisting layer, pad locations opening is preset in corresponding conducting wire, and makes weldering ball at opening place;
Step 7, along cutting groove cut disk, formed single encapsulation chip.
Further, described welding resisting layer is polymer latex.
The invention has the beneficial effects as follows: the present invention provides a kind of MEMS air-tight packaging structure and method for packing, when product encapsulation process forms conducting wire, the metal encapsulating length of product is increased by the design of the light cover of photoetching conducting wire, the polymer-bound region achieving 80% is wrapped up by metal, reaches the effect of conventional metals, ceramic seal. The technological process of this encapsulation structure does not increase processing step and cost, it is achieved that stopping property very well, has the advantage such as low cost and high reliability.
Accompanying drawing explanation
Fig. 1 is that disk of the present invention is bonded with lid sheet, and forms the diagrammatic cross-section of groove in cutting groove position, disk back;
Fig. 2 is the diagrammatic cross-section that the present invention spreads passivation layer in disk back and groove;
Fig. 3 is the diagrammatic cross-section that the present invention exposes weldering pad side and polymer layer side;
Fig. 4 is the conducting wire position profile schematic diagram after the present invention prepares conducting wire and metal block;
Fig. 5 is the schematic top plan view after the present invention prepares conducting wire and metal block;
Fig. 6 is the diagrammatic cross-section that the present invention prepares the metal block position after conducting wire and metal block;
Fig. 7 is the diagrammatic cross-section of single encapsulation chip of the present invention in position, conducting wire;
Fig. 8 is the diagrammatic cross-section of single encapsulation chip of the present invention in metal block position.
By reference to the accompanying drawings, following explanation is done
100-MEMS chip, 101-welds pad, 102-zone of oxidation, 103-groove, 200-lid, 201-cavity, 300-polymer layer, 400-passivation layer, 500-conducting wire, 600-metal block, 700-welding resisting layer, and 800-welds ball, SL-cutting groove
Embodiment
For enabling the present invention more understandable, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail. For convenience of description, in the structure of embodiment accompanying drawing, each integral part is not put by normal rates contracting, therefore does not represent the actual size relatively of each structure in embodiment. Wherein said structure or face above or upside, comprise the middle situation also having other layers.
As shown in Figure 7 and Figure 8, a kind of MEMS air-tight packaging structure, comprise the MEMS chip 100 and of a functional surfaces edge with weldering pad 101 for sealing the lid 200 of this MEMS chip, the functional surfaces edge of described MEMS chip and the front edge of described lid are bonded together by the polymer layer 300 of one fixed width and thickness, the weldering acting as a cushion face of described MEMS chip is covered by this polymer layer, described MEMS chip surrounding is formed with the groove 103 exposing described polymer layer side, and described groove exposes the side of described weldering pad, the side that described weldering pad exposes is connected with the conducting wire 500 leading to MEMS chip back or lid back, the area of the side at least 50% that described polymer layer exposes is by a metal block 600 and described conducting wire sealed envelope, and the width of metal block at least wraps the side of this polymer layer exposure. 80% side that this encapsulation structure is exposed by conducting wire and metal block sealed envelope polymer layer, can reach the effect of conventional metals, ceramic seal. and technological process does not increase processing step and cost, by means of only, in existing encapsulation scheme, the light cover design of amendment photoetching circuit, can reach, therefore, present invention achieves good stopping property, have the advantage such as low cost and high reliability.
Preferably, described lid be middle part with the silicon plate of cavity 201 or sheet glass, be the Working environment that the functional element of MEMS chip functional surfaces provides sealing.
Preferably, described polymer layer is glue or dry film, to realize the functional surfaces of MEMS chip together with the front adhesive of lid.
Preferably, described conducting wire is a kind of single-layer metal structure in copper, nickel, gold, aluminium, nickel phosphorus, palladium and titanium or several multi-layer metal structures.
Preferably, described metal block is a kind of single-layer metal structure in copper, nickel, gold, aluminium, nickel phosphorus, palladium, titanium, chromium and iron or several multi-layer metal structures.
Preferably, it is coated with one layer of welding resisting layer 700 outside described conducting wire, described metal block and exposed polymer layer. Preferably, this welding resisting layer is polymer latex, to protect metal block and conducting wire not to corrode by steam etc.
Preferably, on the conducting wire at described MEMS chip back, preparation has weldering ball 800, it is achieved the derivation transmission of chip signal.
Preferably, described conducting wire is connected with described metal block or is not connected, and makes between each conducting wire electrically mutually isolated. Namely conducting wire can be separated with metal block, as shown in Figure 5, it is possible to is connected with metal block, but insulation isolation between each conducting wire of connection metal block.
See Fig. 1 to Fig. 8, the method for packing of a kind of MEMS air-tight packaging structure of the present invention, comprises the steps:
Step 1, see Fig. 1, a disk and one with some MEMS chip 100 is provided to have the lid sheet of some lids 200, there is between adjacent MEMS chip cutting groove SL, the functional surfaces edge of each MEMS chip is with weldering pad 101, the front edge of the functional surfaces edge of MEMS chip and lid is bonded together by the polymer layer 300 of one fixed width and thickness, and the weldering acting as a cushion face making MEMS chip is covered by this polymer layer; Lid sheet can be silicon wafer or glass.
Step 2, see Fig. 1, cutting groove position etching on disk, forms the pad parts exposing MEMS chip and divides the groove 103 in front;
Step 3, see Fig. 2, in groove and on the back of MEMS chip, lay passivation layer 400; Passivation layer can be but be not limited to be the materials such as silicon nitride (SixNy), silicon oxide, polyimide, benzocyclobutane olefine resin (BCB). The making of passivation layer can adopt plasma enhanced chemical vapor deposition (PECVD), sputters, revolve the low temperature methods such as painting, spraying.
Step 4, see Fig. 3, by the mode of cut mechanically, come out in weldering pad side and polymer layer side;
Step 5, see Fig. 4, Fig. 5 and Fig. 6, described passivation layer is formed by the conducting wire 500 on the back electrically causing described MEMS chip of described weldering pad, form the metal block 600 of at least 50% area of the polymer layer side that sealed envelope exposes simultaneously; When specifically implementing, it is possible to whole property deposition layer of metal over the passivation layer, then make photoresist layer, and the shape through exposure, developing pattern pad, circuit, metal block, and use the metal outside wet etching metal removal pad, circuit, metal block. Passivation layer upper metal layer is mainly for follow-up plating, change depositing process provide Seed Layer, it is possible to is but is not limited to be the combination of the metal such as aluminium (Al) or titanium/copper (Ti/Cu).
Wherein, the polymer layer of metal block seal exposed, as shown in Figure 5 and Figure 6. Fig. 5 is the schematic top plan view after preparing conducting wire and metal block, and the lateral side regions that the polymkeric substance of MEMS chip edge bonding exposes is wrapped up by metal block. Fig. 6 is the diagrammatic cross-section of the metal block position after preparing conducting wire and metal block, and the zone of oxidation etc. of polymer layer side, MEMS chip has been wrapped up by metal block with metal, plays good sealing effect, well solves the problem of resistance to air loss.
Step 6, being coated with one layer of welding resisting layer 700 outside described conducting wire, described metal block and exposed polymer layer, on welding resisting layer, pad locations opening is preset in corresponding conducting wire, and makes weldering ball 800 at opening place;
Step 7, see Fig. 7 and Fig. 8, along cutting groove cut disk, formed single encapsulation chip. Fig. 7 is the diagrammatic cross-section of single encapsulation chip in position, conducting wire, the side of conducting wire parcel bonding polymer layer. Fig. 8 is the diagrammatic cross-section of single encapsulation chip in metal block position, the side of metal block parcel bonding polymer layer.
Preferably, described welding resisting layer is polymer latex, to prevent the external environments such as steam are to the erosion of MEMS chip.
Above embodiment is with reference to accompanying drawing, to a preferred embodiment of the present invention will be described in detail. The technician of this area by carrying out various formal amendment or change to above-described embodiment, or is applied to the encapsulation structure of different MEMS chip, but when not deviating from the essence of the present invention, all drops within protection scope of the present invention.
Claims (10)
1. a MEMS air-tight packaging structure, it is characterized in that: comprise a functional surfaces edge with welding the MEMS chip (100) and padding (101) for sealing the lid (200) of this MEMS chip, the functional surfaces edge of described MEMS chip and the front edge of described lid are bonded together by the polymer layer (300) of one fixed width and thickness, the outer side weld pad side of described MEMS chip is connected with the conducting wire (500) leading to MEMS chip back or lid back, the area of the side at least 80% that described polymer layer exposes is by a metal block (600) and described conducting wire sealed envelope, and the width of metal block at least wraps the side of this polymer layer exposure.
2. MEMS air-tight packaging structure according to claim 1, it is characterised in that: described lid is middle part with the silicon plate of cavity (201) or sheet glass.
3. MEMS air-tight packaging structure according to claim 1, it is characterised in that: described polymer layer is glue or dry film.
4. MEMS air-tight packaging structure according to claim 1, it is characterised in that: described conducting wire is a kind of single-layer metal structure in copper, nickel, gold, aluminium, nickel phosphorus, palladium and titanium or several multi-layer metal structures.
5. MEMS air-tight packaging structure according to claim 1, it is characterised in that: described metal block is a kind of single-layer metal structure in copper, nickel, gold, aluminium, nickel phosphorus, palladium, titanium, chromium and iron or several multi-layer metal structures.
6. MEMS air-tight packaging structure according to claim 1, it is characterised in that: it is coated with one layer of welding resisting layer (700) outside described conducting wire, described metal block and exposed polymer layer.
7. MEMS air-tight packaging structure according to claim 1, it is characterised in that: on the conducting wire at described MEMS chip back, preparation has weldering ball (800).
8. MEMS air-tight packaging structure according to claim 1, it is characterised in that: described conducting wire is connected with described metal block or is not connected, and makes between each conducting wire electrically mutually isolated.
9. the method for packing of a MEMS air-tight packaging structure, it is characterised in that: comprise the steps:
The disk and one that step 1, offer one have some MEMS chip (100) has the lid sheet of some lids (200), there is between adjacent MEMS chip cutting groove (SL), the functional surfaces edge of each MEMS chip is with weldering pad (101), the front edge of the functional surfaces edge of MEMS chip and lid is bonded together by the polymer layer (300) of one fixed width and thickness, and the weldering acting as a cushion face making MEMS chip is covered by this polymer layer;
Step 2, on disk cutting groove position etching, form the pad parts exposing MEMS chip and divide the groove (103) in front;
Step 3, in groove and on the back of MEMS chip, lay passivation layer (400);
Step 4, by the mode of cut mechanically, come out in weldering pad side and polymer layer side;
Step 5, the conducting wire (500) formed on described passivation layer on the back electrically causing described MEMS chip described weldering padded, form the metal block (600) of at least 80% area of the polymer layer side that sealed envelope exposes simultaneously;
Step 6, being coated with one layer of welding resisting layer (700) outside described conducting wire, described metal block and exposed polymer layer, on welding resisting layer, pad locations opening is preset in corresponding conducting wire, and makes weldering ball (800) at opening place;
Step 7, along cutting groove cut disk, formed single encapsulation chip.
10. the method for packing of MEMS air-tight packaging structure according to claim 9, it is characterised in that: described welding resisting layer is polymer latex.
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Application publication date: 20160601 Assignee: Huatian Science and Technology (Nanjing) Co.,Ltd. Assignor: HUATIAN TECHNOLOGY (KUNSHAN) ELECTRONICS Co.,Ltd. Contract record no.: X2021610000005 Denomination of invention: Hermetic packaging structure and method of MEMS Granted publication date: 20180626 License type: Common License Record date: 20210527 |
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