CN105607299A - 双向调制的高速铌酸锂相位调制器 - Google Patents

双向调制的高速铌酸锂相位调制器 Download PDF

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CN105607299A
CN105607299A CN201610185251.0A CN201610185251A CN105607299A CN 105607299 A CN105607299 A CN 105607299A CN 201610185251 A CN201610185251 A CN 201610185251A CN 105607299 A CN105607299 A CN 105607299A
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lithium niobate
traveling wave
modulator
phase modulator
slab waveguide
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CN105607299B (zh
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舒平
华勇
张洪波
郑德晟
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Cetc Chip Technology Group Co ltd
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CETC 44 Research Institute
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G02F1/0316—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G02F1/0356—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure controlled by a high-frequency electromagnetic wave component in an electric waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/50—Phase-only modulation

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

一种双向调制的高速铌酸锂相位调制器，包括铌酸锂基底、条形波导和行波电极，所述条形波导和行波电极均形成于铌酸锂基底上，其创新在于：所述铌酸锂基底上设置有两个行波电极，两个行波电极之间留有间隔，两个行波电极沿条形波导轴向顺次排列，条形波导的一端记为A端，条形波导的另一端记为B端，其中一个行波电极能对条形波导上由A端传向B端的光信号进行单向调制，另一个行波电极能对条形波导上由B端传向A端的光信号进行单向调制。本发明的有益技术效果是：提供了一种能实现双向调制的铌酸锂相位调制器，其器件体积较小，外围电路的整合度较高。

Description

双向调制的高速铌酸锂相位调制器
技术领域
本发明涉及一种相位调制器，尤其涉及一种双向调制的高速铌酸锂相位调制器。
背景技术
铌酸锂调制器具有传输容量大、传输质量高、中继距离长、抗电磁干扰性能好、保密性能好等优异性能，广泛应用于高速网络计算机的互连、传感器融合、数据融合、图像融合、综合探测、光控相控阵雷达、电子战等领域的光收发系统中。
传统的铌酸锂相位调制器芯片结构如图1所示，该器件能够将电信号调制到光信号，基于本领域的基本常识可知，只有当行波电极中传播的微波与光波导中传播的光波方向相同时，行波电极才能对光信号起到调制作用，因此，现有技术中，当行波电极的结构形式确定后，对应的铌酸锂相位调制器芯片只具备单向调制的功能，但是，随着技术的发展，在一些光收发系统中既需要将发射信号调制为光信号进行传输也需要将接收信号调制为光信号进行传输，目前的常见做法是为发射信号和接收信号单独设置光路，并采用两个调制器来对两条光路分别进行调制，同时也要为两个调制器匹配相应的外围电路，这就使得硬件成本和器件体积都会相应增加，不利于装置的微型化。
发明内容
针对背景技术中的问题，本发明提出了一种双向调制的高速铌酸锂相位调制器，包括铌酸锂基底、条形波导和行波电极，所述条形波导和行波电极均形成于铌酸锂基底上，其创新在于：所述铌酸锂基底上设置有两个行波电极，两个行波电极之间留有间隔，两个行波电极沿条形波导轴向顺次排列，条形波导的一端记为A端，条形波导的另一端记为B端，其中一个行波电极能对条形波导上由A端传向B端的光信号进行单向调制，另一个行波电极能对条形波导上由B端传向A端的光信号进行单向调制。
采用本发明方案后，具有不同调制方向的两个行波电极集成在同一块铌酸锂基底上，基于行波电极的单向调制原理可知，两个行波电极在对各自对应方向上的光信号进行调制时，不会对反向传输的光信号造成影响，这就可以实现对两个方向上的光信号的同时调制，大大提高双向调制器的集成度。
优选地，所述两个行波电极的端口位于铌酸锂基底的同侧。采用此方案后，相应的外围电路和器件就能设置于铌酸锂基底的同侧，有利于空间节约。
优选地，单个行波电极所对应的端口有射频输入端和匹配电阻连接端。
优选地，两个行波电极分别形成两个调制区，第一调制区位于第二调制区的左侧，第一调制区所对应的射频输入端位于第一调制区的右侧，第一调制区所对应的匹配电阻连接端位于第一调制区的左侧，第二调制区所对应的射频输入端位于第二调制区的左侧，第二调制区所对应的匹配电阻连接端位于第二调制区的右侧；两个射频输入端均与一功率分配模块电气连接。采用此方案后，两个行波电极可共用一套微波信号发生电路，微波信号发生电路输出的射频信号由功率分配模块分配后再输入至对应的行波电极中。
优选地，所述铌酸锂基底为X切铌酸锂基底或Z切铌酸锂基底。
本发明的有益技术效果是：提供了一种能实现双向调制的铌酸锂相位调制器，其器件体积较小，外围电路的整合度较高。
附图说明
图1、典型的单向调制铌酸锂相位调制器结构示意图；
图2、本发明的铌酸锂相位调制器结构示意图；
图中各个标记所对应的名称分别为：铌酸锂基底1、条形波导2、行波电极3、射频输入端4、匹配电阻连接端5、电阻6、功率分配模块7。
具体实施方式
一种双向调制的高速铌酸锂相位调制器，包括铌酸锂基底、条形波导和行波电极，所述条形波导和行波电极均形成于铌酸锂基底上，其创新在于：所述铌酸锂基底上设置有两个行波电极，两个行波电极之间留有间隔，两个行波电极沿条形波导轴向顺次排列，条形波导的一端记为A端，条形波导的另一端记为B端，其中一个行波电极能对条形波导上由A端传向B端的光信号进行单向调制，另一个行波电极能对条形波导上由B端传向A端的光信号进行单向调制。
进一步地，所述两个行波电极的端口位于铌酸锂基底的同侧。
进一步地，单个行波电极所对应的端口有射频输入端和匹配电阻连接端。
进一步地，两个行波电极分别形成两个调制区，第一调制区位于第二调制区的左侧，第一调制区所对应的射频输入端位于第一调制区的右侧，第一调制区所对应的匹配电阻连接端位于第一调制区的左侧，第二调制区所对应的射频输入端位于第二调制区的左侧，第二调制区所对应的匹配电阻连接端位于第二调制区的右侧；两个射频输入端均与一功率分配模块电气连接。
进一步地，所述铌酸锂基底为X切铌酸锂基底或Z切铌酸锂基底。

Claims (5)

1.一种双向调制的高速铌酸锂相位调制器，包括铌酸锂基底、条形波导和行波电极，所述条形波导和行波电极均形成于铌酸锂基底上，其特征在于：所述铌酸锂基底上设置有两个行波电极，两个行波电极之间留有间隔，两个行波电极沿条形波导轴向顺次排列，条形波导的一端记为A端，条形波导的另一端记为B端，其中一个行波电极能对条形波导上由A端传向B端的光信号进行单向调制，另一个行波电极能对条形波导上由B端传向A端的光信号进行单向调制。
2.根据权利要求1所述的双向调制的高速铌酸锂相位调制器，其特征在于：所述两个行波电极的端口位于铌酸锂基底的同侧。
3.根据权利要求2所述的双向调制的高速铌酸锂相位调制器，其特征在于：单个行波电极所对应的端口有射频输入端和匹配电阻连接端。
4.根据权利要求3所述的双向调制的高速铌酸锂相位调制器，其特征在于：两个行波电极分别形成两个调制区，第一调制区位于第二调制区的左侧，第一调制区所对应的射频输入端位于第一调制区的右侧，第一调制区所对应的匹配电阻连接端位于第一调制区的左侧，第二调制区所对应的射频输入端位于第二调制区的左侧，第二调制区所对应的匹配电阻连接端位于第二调制区的右侧；两个射频输入端均与一功率分配模块电气连接。
5.根据权利要求1、2、3或4所述的双向调制的高速铌酸锂相位调制器，其特征在于：所述铌酸锂基底为X切铌酸锂基底或Z切铌酸锂基底。
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