CN105600743A - 3D (three-dimensional) solid electrode dielectrophoresis nano wire operating and control system - Google Patents
3D (three-dimensional) solid electrode dielectrophoresis nano wire operating and control system Download PDFInfo
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- CN105600743A CN105600743A CN201610057507.XA CN201610057507A CN105600743A CN 105600743 A CN105600743 A CN 105600743A CN 201610057507 A CN201610057507 A CN 201610057507A CN 105600743 A CN105600743 A CN 105600743A
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- nano wire
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0061—Methods for manipulating nanostructures
- B82B3/0066—Orienting nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The invention discloses a 3D (three-dimensional) solid electrode dielectrophoresis nano wire operating and control system, which comprises a 3D solid electrode dielectrophoresis nano wire operating and control chip, an electric field control unit, a flow field control unit and a microcomputer, wherein the electric field control unit comprises a signal generator, a signal amplifier and a signal control system; the flow field control unit comprises an injection pump; an observation unit comprises a microscope. By using the 3D solid electrode dielectrophoresis nano wire operating and control system, the flexibility and the precision of the nano wire operating and control system are effectively improved; moreover, the problem that the electric field of a point electrode on a 2D (two-dimensional) electrode layer can be intensively interfered by the electric field of a leading-out wire is overcome; the 3D solid electrode dielectrophoresis nano wire operating and control system can be widely used for the field of the operation and the control of nano materials, the assembly of nano devices, and the like.
Description
Technical field
The invention belongs to dielectrophoresis chip, nano wire manipulation field, be specifically related to a kind of three-dimensional lattice entity electrodeControl the accurate control system of high flexibility nano wire that electric field combines with cross runner control flow field.
Background technology
In recent years, the most noticeable nanosecond science and technology are: nano material is assembled as a kind of high-quality base materialThe nano functional device or the system that become any kind, comprise nano field-effect pipe, nano laser, nanometer biochemistrySensor, nano generator and nanometer computing system etc. As a kind of outstanding nanometer base material, nano wire bothThe research of the mechanical property that can reduce to cause for the dependence of electricity, heat transmission or space scale provides good carrier,Also can provide attaching parts and functional part for the manufacture of nanoelectronic, photoelectricity, electrochemistry and electromechanical device.
Various countries scholar has carried out the research of a large amount of explorations for manipulation and the package technique of nano wire, relates generally toFollowing several aspect: on the one hand, utilize dexterously biomolecule action power, electrostatic force, shear forceMany nano wires are carried out to the non-accurate assembling of group; On the other hand, application scanning probe microscope, essenceClose micro-nano manipulator carries out attitude control and accurately handles single nano-wire; The 3rd, utilize magnetic field to ferromagneticProperty material nano wire is dynamically handled, and should carry out high accuracy manipulation to single nano-wire with light tweezer. SoAnd, use the biological model, micro-fluidic technologies, LB film permutation technology, micro-contact printing technology can only be by a large amount ofNano wire is handled as a whole, aspect the accurate control of single nano-wire orientation and position incapability bePower; Applying nano manipulator can be realized the accurate manipulation to single nano-wire, but higher operation easier and lowDriving efficiency make it cannot meet the requirement of many nano wire mass assembling; Magnetic tweezer, light tweezer are subject to respectivelyTo the restriction of nano wire material and the optical acquisition limit, be difficult to be applied to the extensive flexibility of any material nano wireChange manipulation.
Any material all has certain dielectric properties, and under DC Electric Field, they can be induced because of polarizationProduce electric dipole moment. When the spatial distribution of extra electric field presents heterogeneity, the material after polarization will be subject toA clean power, i.e. dielectrophoretic force. Along with the raising of micro-/ nano electrode manufacture level, less signal strength signal intensity justCan produce the space inhomogeneous field that is enough to drive nano material motion. It is flat that a lot of scholars have developed a series of two dimensionsFace electrode structure, to produce specific space inhomogeneous field, is handled and is assembled monodimension nanometer material. ThisHandle mostly based on metal solid electrod-array a bit, can only simply assemble nano material, simultaneously due to goldThe rigidity characteristic of true body electrode, makes manipulation lack flexibility. And the photoinduction dummy electrodes occurring afterwards canChange in real time electrode shape size, operating process is flexible to increase, but the increase of chip manufacture difficulty, cost increases,Accuracy declines, and in operating process, nano wire can only present vertical attitude, and the attitude of nano wire and position difficultyTo continue maintenance, very difficult adaptation subsequently functionalization is integrated.
Therefore, if a kind of high flexibility and extensive control system that can realize nano wire proposed, with simultaneously fullThe single accurate manipulation of foot and many batches are accurately assembled, and will overcome to a certain extent above-mentioned limitation.
Summary of the invention
Goal of the invention: the problem existing for prior art, the invention provides a kind of 3D entity electrode dielectrophoresisNano wire control system, this system has realized high flexibility, the accuracy manipulation of nano wire.
Technical scheme: described 3D entity electrode dielectrophoresis nano wire control system, comprises 3D entity electrode dielectricSwimming nano wire manipulation chip, electric control unit, flow field control unit and microcomputer;
Described 3D entity electrode dielectrophoresis nano wire manipulation chip comprises two 2D electrode layers, is positioned at two 2DTwo 3D electrode layers between electrode layer and a slice runner layer between two 3D electrode layers; Should3D entity electrode dielectrophoresis nano wire manipulation chip forms with upper and lower symmetrical structure alignment package;
Described electric control unit comprises signal generator, whistle control system, described signal generator and signalControl system connects; The outside of described whistle control system and 3D entity electrode dielectrophoresis nano wire manipulation chipCoupling part connects;
Described flow field control unit comprises syringe pump, described syringe pump and 3D entity electrode dielectrophoresis nano wire behaviourControl chip is imported and exported part and is connected;
Described microcomputer is connected with the signal generator in electric control unit, this microcomputer control letterWaveform, voltage swing, frequency, the phase place of the signal of number generator.
Particularly, also comprise microscope, by the manipulation feelings of microscope and microcomputer real-time monitored nano wireCondition.
Particularly, described 3D entity electrode dielectrophoresis nano wire manipulation chip is imported and exported partly and is filled with waste collectionPut connection.
Particularly, described electric control unit also comprises signal amplifier, and described signal amplifier and signal occurDevice connects.
Particularly, described 2D electrode layer comprise 3X4 array point electrode, lead portion, external connecting divide,Alignment block part.
Particularly, described 3D electrode layer comprises 3X4 array point electrode, alignment block part.
More specifically, described 3X4 array point electrode is that latticed form is arranged, and number, each point of point is straightFootpath, spacing between points can change.
Particularly, described 3D entity electrode dielectrophoresis nano wire manipulation chip structure is that 2D electrode layer is at ground floorAnd layer 5,3D electrode layer is the second layer and the 4th layer, and runner layer is at the 3rd layer; Five layer segments basis respectivelyAlignment block part is separately aimed at bonding packaging.
Particularly, described runner layer comprises cross runner, imports and exports part, alignment block part.
Beneficial effect: compared with prior art, the invention has the advantages that: adopt 3D entity electrode dielectrophoresisNano wire manipulation technology, makes attitude and the position of nano wire in manipulation process can adjust arbitrarily and can continueKeep, effectively improved flexibility and the accuracy of nano wire control system; Secondly, build 3D dot matrix entity electricityAll X-Y schemes can be by several approximate expressions on the one hand for the utmost point, establishing of 3D electrode layer on the other handMeter has overcome the electric field of point electrode on 2D electrode layer can be by the strong problem of disturbing of the electric field of lead-out wire; Finally,The symmetrical expression design of chip makes chip can produce Arbitrary 3 D electric field and accurately manipulates nano wire, and chipManufacture process is simple, can be widely used in the field such as manipulation and assembling nano-device of nano material.
Brief description of the drawings
Fig. 1 is 3D entity electrode dielectrophoresis nano wire control system overall structure schematic diagram of the present invention;
Fig. 2 is the overall structure schematic diagram of 3D entity electrode dielectrophoresis nano wire manipulation chip of the present invention;
Fig. 3 is the 2D electrode layer structure schematic diagram of 3D entity electrode dielectrophoresis nano wire manipulation chip of the present invention;
Fig. 4 is the 3D electrode layer structure schematic diagram of 3D entity electrode dielectrophoresis nano wire manipulation chip of the present invention;
Fig. 5 is the runner layer structural representation of 3D entity electrode dielectrophoresis nano wire manipulation chip of the present invention;
Fig. 6 is the principle schematic of 3D entity electrode dielectrophoresis nano wire manipulation chip manipulation nano wire of the present invention.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, further illustrate the present invention.
As shown in Figure 1, the present invention is that a kind of 3D entity electrode dielectrophoresis nano wire control system comprises 3D entityElectrode dielectrophoresis nano wire manipulation chip 11, microcomputer 12, signal generator 13, signal amplifier 14,Whistle control system 15, syringe pump 16, waste collecting device 17 and microscope 18; Wherein, signal occursDevice 13, signal amplifier 14, whistle control system 15, microcomputer 12 form the electric field controls of chipSystem; Microcomputer 12 is connected with signal generator 13; Signal generator 13 and signal amplifier 14Connect; Signal amplifier 14 is connected with whistle control system 15; The outside of whistle control system 13 and chipCoupling part 24 connects by thin electric wire 121. Syringe pump 16 forms the flow field control system of chip; Syringe pump16 import and export part 111 with chip is connected by microtubule 19; Chip is imported and exported part 111 and waste collection dressPutting 17 connects by microtubule.
As shown in Figure 2, described 3D entity electrode dielectrophoresis nano wire manipulation chip by two 2D electrode layers 21,Two 3D electrode layers 22, a slice runner layers 23 form with symmetrical structure alignment package; Described 2D electrode layer 21Comprise that 3X4 array point electrode 26, lead portion 25, external connecting divide 24, alignment block part 27; Described3D electrode layer 22 comprises 3X4 array point electrode 26, alignment block part 27; Described runner layer 23 comprises crossShape runner 28, import and export part 111, alignment block part 27; Described 3D entity electrode dielectrophoresis nano wireManipulation chip 11 structures be 2D electrode layer 21 at ground floor and layer 5,3D electrode layer 22 at the second layer andThe 4th layer, runner layer 23 is at the 3rd layer; Five layer segments are aimed at bonding according to alignment block part 27 separately respectivelyEncapsulation.
2D electrode layer 21 material used of 3D entity electrode dielectrophoresis nano wire manipulation chip 11 is transparent ITO(tin indium oxide) glass, the structure material used of 3D electrode layer 22 is dimethyl silicone polymer or poly-methyl-propOlefin(e) acid methyl esters, the flow passage structure material used of runner layer 23 be dimethyl silicone polymer, glass, epoxy resin,Any one in Merlon or polymethyl methacrylate. Cross runner 28 structures of runner layer 23 canObtain by photoetching technique or other lithographic technique rapid processing, and utilize APTES or other reagentLearn the ad hoc fashions such as modification to runner modifying surface, to reduce the absorption of runner inner surface to nano wire. IfPut micro-structural alignment mark, realize by process for modifying surface such as UV/ozone irradiation or oxygen plasma treatmentIrreversible bonding between 2D electrode layer 21,3D electrode layer 22 and runner layer 23.
Be workflow and the general principle of 3D entity electrode dielectrophoresis nano wire control system 11 below.
The groundwork flow process of 3D entity electrode dielectrophoresis nano wire control system 11 of the present invention: nano wire is moltenThe nano wire solution that liquid dilutes, ultrasonic concussion is configured to evenly, disperses, syringe pump 16 is molten by nano wireLiquid is transported in cross runner 28, the simultaneously flow field of control chip inside, then by microcomputer 12,Signal generator 13, signal amplifier 14, whistle control system 15 come in the inner lattice electrode of control chip everyThe break-make of individual point, waveform, voltage swing, frequency, phase place, and then electric field, electric field and stream in control chipField combines to manipulate nano wire 61.
As shown in Figure 3,2D entity electrode layer 21 adopts ito glass to make, and the ito thin film on ito glass is usedThe method of wet etching is made into definite shape as the entity electrode in chip, and black part is divided on ito glassThe part of remaining ito thin film after wet etching. Entity electrode is 3X4 round dot array format, according to allTwo-dimensional pattern can carry out approximate expression design by several points; Each round dot can be realized independent break-makeWith regulating frequency and voltage swing, phase place; Three little square block are 2D electrode layer 21 and 3D electrode layer 22, streamWhen road layer 23 bonding, be used for the pattern part of aiming at; 12 rectangular blocks at edge for for link external power source withThe external linkage part 24 of each round dot electrode in round dot array; 3X4 array point electrode 26 divides 24 with external connectingConnect by lead portion 24.
As shown in Figure 4, the material of 22 layers of employing of 3D entity electrode is dimethyl silicone polymer and polymethylacrylic acidMethyl esters, two 3D entity electrode layers 22 are used respectively different technique manufactures, and wherein a slice is used poly dimethyl silicaThen the moulding of building of alkane aims at bonding with 2D entity electrode layer 21, and then at the micropore of 3D entity electrode layer 22In array, filled conductive silver slurry, puts into vacuum negative pressure device and vacuumizes, and allows conductive silver paste be full of in microwell array,Then after conductive silver paste unnecessary surface being wiped off, put into 93 DEG C, baking oven dry 15 minutes plastic; An other sheet materialMatter polymethyl methacrylate, adopts laser dotting to produce 3X4 array hole in conjunction with bit bore, then usesTweezers are inserted into the thin short metal bar crossed of polishing cleaning treatment respectively in 12 micropores, then with a slice 2D entity electricityUtmost point layer 21 is aimed at bonding.
As shown in Figure 5, the material of runner layer 23 is dimethyl silicone polymer, glass, epoxy resin, poly-carbonAny one in acid esters or polymethyl methacrylate, cross runner 28 structures of runner layer 23 can be passed throughPhotoetching technique or other lithographic technique rapid processing obtain, and utilize APTES or other reagent to carry out chemistry and repairThe ad hoc fashions such as decorations are to runner modifying surface, to reduce the absorption of runner inner surface to nano wire 61. InBetween be cross runner 28, four ends of cross runner 28 form chip from four sides with card punch punching and enterExit portion 111, chip import and export part 111 injects microtubule 19 and is then connected with syringe pump 16, controls streamFlow field in road. When being runner layer and 2D electrode layer 21,3D electrode layer 22 bonding, three little square block useThe alignment block part 27 of aiming at.
As shown in Figure 6, the principle that nano wire is manipulated in the middle of cross runner is: any material all has oneFixed dielectric properties, under DC Electric Field, they can induce generation electric dipole moment because of polarization. When additionalThe spatial distribution of electric field presents heterogeneity, and the material after polarization will be subject to a clean power, i.e. dielectrophoretic force,As 24 points in figure have the not point electrodes 63 of energising of 62,22 of point electrodes of 2 energisings, nano wire 61Be subject to the dielectrophoretic force 64 of the line direction at point electrode 62 centers of two energisings, Here it is electric field is to nano wire61 effect; Meanwhile, the structure of cross runner 28 makes to control two separately by syringe pump 16The flow velocity of mutually perpendicular direction, then according to vector in conjunction with so that control centre region be that the flow velocity in dot matrix region is largeLittle and direction, and then control the suffered flow field forces 65 of nano wire, this is the effect of flow field to nano wire 61. ElectricityField combines with flow field and realizes high flexibility, accurately manipulates nano wire 61.
Claims (9)
1. a 3D entity electrode dielectrophoresis nano wire control system, is characterized in that: comprise 3D entity electricityUtmost point dielectrophoresis nano wire manipulation chip (11), electric control unit, flow field control unit and microcomputer (12);
Described 3D entity electrode dielectrophoresis nano wire manipulation chip (11) comprise two 2D electrode layers (21),Be positioned at the two 3D electrode layers (22) between two 2D electrode layers (21) and be positioned at two 3D electrode layers(22) a slice runner layer (23) between; This 3D entity electrode dielectrophoresis nano wire manipulation chip (11) withUpper and lower symmetrical structure alignment package forms;
Described electric control unit comprises signal generator (13), whistle control system (15), and described signal is sent outRaw device (13) is connected with whistle control system (15); Described whistle control system (15) and 3D entity electricityThe external connecting of utmost point dielectrophoresis nano wire manipulation chip (11) divides (24) to connect;
Described flow field control unit comprises syringe pump (16), described syringe pump (16) and 3D entity electrode dielectricSwimming nano wire manipulation chip (11) is imported and exported part (111) and is connected;
Described microcomputer (12) is connected with the signal generator (13) in electric control unit, and this is miniatureWaveform, voltage swing, frequency, the phase place of the signal of computer (12) control signal generator (13).
2. 3D entity electrode dielectrophoresis nano wire control system according to claim 1, is characterized in that:Also comprise microscope (18), by microscope (18) and microcomputer (12) real-time monitored nano wireManipulation situation.
3. 3D entity electrode dielectrophoresis nano wire control system according to claim 1, is characterized in that:Described 3D entity electrode dielectrophoresis nano wire manipulation chip (11) is imported and exported part (111) and waste collection dressPutting (17) connects.
4. 3D entity electrode dielectrophoresis nano wire control system according to claim 1, is characterized in that:Described electric control unit also comprises signal amplifier (14), and described signal amplifier (14) occurs with signalDevice (13) connects.
5. 3D entity electrode dielectrophoresis nano wire control system according to claim 1, is characterized in that:Described 2D electrode layer (21) comprises 3X4 array point electrode (26), lead portion (25), external connectingDivide (24), alignment block part (27).
6. 3D entity electrode dielectrophoresis nano wire control system according to claim 1, is characterized in that:Described 3D electrode layer comprises 3X4 array point electrode (26), alignment block part (27).
7. according to the 3D entity electrode dielectrophoresis nano wire control system described in claim 5 or 6, its featureBe: described 3X4 array point electrode (26) is arranged for latticed form, and the diameter of the number of point, each point,Spacing between points can change.
8. 3D entity electrode dielectrophoresis nano wire control system according to claim 1, is characterized in that:Described 3D entity electrode dielectrophoresis nano wire manipulation chip (11) structure is that 2D electrode layer (21) is at ground floorAnd layer 5,3D electrode layer (22) is the second layer and the 4th layer, and runner layer (23) is at the 3rd layer; Five layersPart is aimed at bonding packaging according to alignment block part separately respectively.
9. 3D entity electrode dielectrophoresis nano wire control system according to claim 1, is characterized in that:Described runner layer comprises cross runner (28), imports and exports part (111), alignment block part (27).
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| CN109866416A (en) * | 2019-03-12 | 2019-06-11 | 上海幂方电子科技有限公司 | Totally digitilized nanometer increasing material manufacturing system and its working method |
| CN110031519A (en) * | 2019-04-28 | 2019-07-19 | 河海大学常州校区 | A kind of graphene deposition aggregation parallel device, operating method and its application based on dielectrophoresis principle |
| CN111908421A (en) * | 2020-07-31 | 2020-11-10 | 江南大学 | Micro-nano self-assembly operation method and system based on light-induced dielectrophoresis |
| TWI744667B (en) * | 2019-07-18 | 2021-11-01 | 義守大學 | Optically-induced dielectrophoresis system and its manufacturing method |
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| CN114918953A (en) * | 2022-05-07 | 2022-08-19 | 中山大学·深圳 | Integrated system and method for controlling micro-nano machine by electric field |
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