CN105600743B - 3D (three-dimensional) solid electrode dielectrophoresis nano wire operating and control system - Google Patents
3D (three-dimensional) solid electrode dielectrophoresis nano wire operating and control system Download PDFInfo
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- CN105600743B CN105600743B CN201610057507.XA CN201610057507A CN105600743B CN 105600743 B CN105600743 B CN 105600743B CN 201610057507 A CN201610057507 A CN 201610057507A CN 105600743 B CN105600743 B CN 105600743B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0061—Methods for manipulating nanostructures
- B82B3/0066—Orienting nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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Abstract
The invention discloses a 3D (three-dimensional) solid electrode dielectrophoresis nano wire operating and control system, which comprises a 3D solid electrode dielectrophoresis nano wire operating and control chip, an electric field control unit, a flow field control unit and a microcomputer, wherein the electric field control unit comprises a signal generator, a signal amplifier and a signal control system; the flow field control unit comprises an injection pump; an observation unit comprises a microscope. By using the 3D solid electrode dielectrophoresis nano wire operating and control system, the flexibility and the precision of the nano wire operating and control system are effectively improved; moreover, the problem that the electric field of a point electrode on a 2D (two-dimensional) electrode layer can be intensively interfered by the electric field of a leading-out wire is overcome; the 3D solid electrode dielectrophoresis nano wire operating and control system can be widely used for the field of the operation and the control of nano materials, the assembly of nano devices, and the like.
Description
Technical field
The invention belongs to dielectrophoresis chip, nano wire manipulation field, and in particular to a kind of three-dimensional lattice entity electrode control
High flexibility nano wire accurate control system of the electric field in combination with cross runner controls flow field.
Background technology
Since in recent years, most noticeable nanosecond science and technology are：Nano material is assembled into as a kind of high-quality base material and is appointed
The nano functional device or system of meaning species, including nano field-effect pipe, nano laser, nanometer biochemical sensor, nanometer is sent out
Motor and nanometer computing system etc..As a kind of outstanding nanometer base material, nano wire can for electricity, the dependency of Heat transmission or
Space scale reduces the research of the mechanical property for causing and provides good carrier, also can be nanoelectronic, photoelectricity, electrochemistry and electromechanics
The manufacture of device provides connection member and functional part.
Scholars have carried out a large amount of exploratory researchs for the manipulation of nano wire with package technique, relate generally to following
Several aspects：On the one hand, dexterously using biomolecule action power, electrostatic force, shear force many nano wires are entered
The non-precision assembling of row groupment；On the other hand, application scanning probe microscope, accurate micro-nano mechanical hand are to single nano-wire
Carry out gesture stability and accurate manipulation；3rd, enter Mobile state to ferromagnetism material nano wire using magnetic field and manipulate, and apply light
Tweezer carries out high accuracy manipulation to single nano-wire.However, with biological model, micro-fluidic technologies, LB film permutation technologies, micro- contact
Printing technology can only be manipulated a large amount of nano wires as overall, and in the precise control side of single nano-wire orientation and position
Face is then helpless；The accurate manipulation to single nano-wire can be realized using nano-machine handss, but higher operation difficulty and low
Under driving efficiency make it to meet the requirement of many nano wire mass assembling；And magnetic tweezer, optical tweezer are then subject to respectively nanometer
The restriction of wire rod matter and the optical acquisition limit, is difficult to apply to the extensive flexibility manipulation of any material nano wire.
Any material all has certain dielectric properties, and under DC Electric Field, they can induce generation because of polarization
Electric dipole moment.When the spatial distribution of extra electric field presents heterogeneity, the material after polarization will be subject to a resulting net force, that is, be situated between
Electrophoretic force.With the raising of micro-/ nano electrode manufacture level, less signal intensity can just produce and be enough to drive nano material to transport
Dynamic spatial non-uniform electric field.Many scholars develop a series of two dimensional surface electrode structures to produce specific spatial non-uniform
Electric field, is manipulated to monodimension nanometer material and is assembled.These manipulations are all based on greatly metal solid electrod-array, can only be to nanometer
Material is simply assembled, simultaneously because the rigidity characteristic of metal solid electrode so that manipulation lacks flexibility.And occurred later
Photoinduction dummy electrodes can in real time change electrode shape size, the flexible increase of operating process, but chip manufacture difficulty and increase, into
This increase, degree of accuracy declines, and nano wire can only be presented vertical attitude in operating process, and nano wire attitude and position be difficult to
Persistently keep, it is difficult to it is integrated to adapt to subsequently functionalization.
Therefore, if proposing a kind of high flexibility and extensive control system that can realize nano wire, to meet single simultaneously
Root accurate manipulation and the accurate assembling of Duo Gen batches, will to a certain extent overcome above-mentioned limitation.
The content of the invention
Goal of the invention：For the problem that prior art is present, the present invention provides a kind of 3D entities electrode dielectrophoresis nano wire
Control system, the system realizes the high flexibility of nano wire, accuracy manipulation.
Technical scheme：The 3D entities electrode dielectrophoresis nano wire control system, including 3D entity electrode dielectrophoresis nanometers
Line manipulation chip, electric control unit, flow field control unit and microcomputer；
3D entities electrode dielectrophoresis nano wire manipulation chip include two panels 2D electrode layer, positioned at two panels 2D electrode layer it
Between two panels 3D electrode layer and a piece of flow channel layer between two panels 3D electrode layer；The 3D entity electrode dielectrophoresis nanometers
Line manipulation chip is formed with upper and lower symmetrical structure alignment package；
The electric control unit includes signal generator, whistle control system, and the signal generator is controlled with signal
System connects；The external connection part that the whistle control system manipulates chip with 3D entity electrode dielectrophoresises nano wire is connected；
The flow field control unit includes syringe pump, and the syringe pump manipulates chip with 3D entity electrode dielectrophoresises nano wire
Import and export part to connect；
The microcomputer is connected with the signal generator in electric control unit, and the Microcomputer control signal is sent out
Waveform, voltage swing, frequency, the phase place of the signal of raw device.
Specifically, also including microscope, by microscope and the manipulation situation of microcomputer real-time monitored nano wire.
Specifically, the 3D entities electrode dielectrophoresis nano wire manipulation chip is imported and exported part and is connected with waste collecting device
Connect.
Specifically, the electric control unit also includes signal amplifier, and the signal amplifier connects with signal generator
Connect.
Specifically, the 2D electrode layers include 3X4 array point electrodes, lead portion, external connection part, alignment block portion
Point.
Specifically, the 3D electrode layers include 3X4 array point electrodes, alignment block part.
More specifically, the 3X4 arrays point electrode be latticed form arrangement, and put number, each point diameter, point with
Spacing between point can change.
Specifically, the 3D entities electrode dielectrophoresis nano wire manipulation chip structure is 2D electrode layers in ground floor and the 5th
Layer, in the second layer and the 4th layer, flow channel layer is in third layer for 3D electrode layers；Five layer segments are respectively according to respective alignment block part pair
Quasi- bonding packaging.
Specifically, the flow channel layer includes cross runner, imports and exports part, alignment block part.
Beneficial effect：Compared with prior art, it is an advantage of the current invention that：Grasped using 3D entity electrode dielectrophoresises nano wire
Control technology, allows attitude and position of the nano wire during manipulation arbitrarily to adjust and can persistently keep, and effectively increases
The flexible and accuracy of nano wire control system；Secondly, on the one hand all of X-Y scheme all may be used to build 3D dot matrix entities electrode
Can be drawn with the electric field that the design by several points approximate expression, another aspect 3D electrode layer overcomes point electrode on 2D electrode layers
The problem of the electric field of outlet interference strongly；Finally, the symmetrical expression design of chip allows chip to produce Arbitrary 3 D electric field
Accurately to manipulate nano wire, and chip manufacturing proces are simple, can be widely used for the manipulation of nano material and assemble nano-device etc.
Field.
Description of the drawings
Fig. 1 is 3D entities electrode dielectrophoresis nano wire control system overall structure diagram of the present invention；
Fig. 2 is the overall structure diagram that 3D entities electrode dielectrophoresis nano wire of the present invention manipulates chip；
Fig. 3 is the 2D electrode layer structure schematic diagrams that 3D entities electrode dielectrophoresis nano wire of the present invention manipulates chip；
Fig. 4 is the 3D electrode layer structure schematic diagrams that 3D entities electrode dielectrophoresis nano wire of the present invention manipulates chip；
Fig. 5 is the flow channel layer structural representation that 3D entities electrode dielectrophoresis nano wire of the present invention manipulates chip；
Fig. 6 is the principle schematic that 3D entities electrode dielectrophoresis nano wire manipulation chip of the present invention manipulates nano wire.
Specific embodiment
With reference to the accompanying drawings and detailed description, the present invention is further elucidated.
As shown in figure 1, the present invention is situated between for a kind of 3D entities electrode dielectrophoresis nano wire control system including 3D entities electrode
Electrophoretic nano line manipulation chip 11, microcomputer 12, signal generator 13, signal amplifier 14, whistle control system 15, note
Penetrate pump 16, waste collecting device 17 and microscope 18；Wherein, signal generator 13, signal amplifier 14, whistle control system
15th, microcomputer 12 constitutes the electrical field control system of chip；Microcomputer 12 is connected with signal generator 13；Signal occurs
Device 13 is connected with signal amplifier 14；Signal amplifier 14 is connected with whistle control system 15；Whistle control system 13 and chip
External connection part 24 connected by thin electric wire 121.Syringe pump 16 constitutes the flow field control system of chip；Syringe pump 16 and core
Piece is imported and exported part 111 and is connected by micro-pipe 19；Chip is imported and exported part 111 and is connected by micro-pipe with waste collecting device 17.
As shown in Fig. 2 the 3D entities electrode dielectrophoresis nano wire manipulation chip is by two panels 2D electrode layer 21, two panels 3D electricity
Pole layer 22, a piece of flow channel layer 23 are formed with symmetrical structure alignment package；The 2D electrode layers 21 include 3X4 arrays point electrode 26,
Lead portion 25, external connection part 24, alignment block part 27；The 3D electrode layers 22 include 3X4 arrays point electrode 26, alignment
Block portion point 27；The flow channel layer 23 includes cross runner 28, imports and exports part 111, alignment block part 27；Described 3D entities
Electrode dielectrophoresis nano wire manipulation chip 11 structure is 2D electrode layers 21 in ground floor and layer 5, and 3D electrode layers 22 are in the second layer
With the 4th layer, flow channel layer 23 is in third layer；Five layer segments are directed at bonding packaging according to respective alignment block part 27 respectively.
Material used by the 2D electrode layers 21 of 3D entity electrode dielectrophoresises nano wire manipulation chip 11 is transparent ITO (oxidations
Indium stannum) glass, material used by the structure of 3D electrode layers 22 is polydimethylsiloxane or polymethyl methacrylate, flow channel layer 23
Flow passage structure used by material be polydimethylsiloxane, glass, epoxy resin, Merlon or polymethyl methacrylate in
Any one.The structure of cross runner 28 of flow channel layer 23 can be obtained by photoetching technique or other lithographic technique rapid processing
Arrive, and the ad hoc fashion such as be chemically modified to runner modifying surface using APTES or other reagents, to reduce runner
Absorption of the inner surface to nano wire.Micro structure alignment mark is set, by the table such as UV/ozone irradiation or oxygen plasma process
What face modification technology was realized between 2D electrode layers 21,3D electrode layers 22 and flow channel layer 23 irreversible is bonded.
It is below the workflow and ultimate principle of 3D entity electrode dielectrophoresis nano wires control system 11.
The main working process of 3D entities electrode dielectrophoresis nano wire control system 11 of the present invention：Nanowire solution is carried out
Dilution, ultrasonic vibration configure uniformly, scattered nanowire solution, nanowire solution is transported to cross runner by syringe pump 16
In 28, while the flow field inside control chip, then by microcomputer 12, signal generator 13, signal amplifier 14, signal
Control system 15 comes break-make, waveform, voltage swing, frequency, the phase place of each point in the lattice electrode of control chip inside, and then controls
Electric field in coremaking piece, electric field manipulates nano wire 61 in combination with flow field.
As shown in figure 3,2D entities electrode layer 21 is made using ito glass, the ito thin film on ito glass is used into wet method
The method of etching is fabricated to definite shape as the entity electrode in chip, and black portions are to remain after wet etching on ito glass
Under ito thin film part.Entity electrode is 3X4 dot matrixes forms, and being can be by some according to all of two-dimensional pattern
Individual point carries out approximate expression design；Each round dot can realize independent break-make with regulating frequency and voltage swing, phase place；Three
Individual little square block is pattern part when 2D electrode layers 21 are bonded with 3D electrode layers 22, flow channel layer 23 for being aligned；Edge
12 rectangular blocks are for the external linkage part 24 of each round dot electrode in linking external power source and dot matrixes；3X4 arrays
Point electrode 26 is connected with external connection part 24 by lead portion 24.
As shown in figure 4,22 layers of material for adopting of 3D entities electrode are for polydimethylsiloxane and polymethyl methacrylate,
Two panels 3D entity electrode layer 22 is manufactured respectively with different technique, wherein a piece of use polydimethylsiloxane to pour molding right
Afterwards bonding is directed at 2D entities electrode layer 21, then in the microwell array of 3D entities electrode layer 22 fills conductive silver paste again, put
Enter evacuation in vacuum negative pressure device, allow conductive silver paste full of in microwell array, then wipe off the conductive silver paste of excess surface
After be put into 93 DEG C of baking oven dry 15 minutes it is i.e. plastic；In addition a piece of material polymethyl methacrylate, is tied using laser dotting
Close bit bore and produce 3X4 array holes, then the thin short metal bar that cleaning treatment of polishing is crossed is inserted respectively into into 12 with tweezers
In individual micropore, then bonding is directed at a piece of 2D entities electrode layer 21.
As shown in figure 5, the material of flow channel layer 23 is polydimethylsiloxane, glass, epoxy resin, Merlon or poly- first
Any one in base acrylic acid methyl ester., the structure of cross runner 28 of flow channel layer 23 can be by photoetching technique or other etching skills
Art rapid processing is obtained, and the ad hoc fashion such as is chemically modified using APTES or other reagents water passage surface is changed
Property, to reduce absorption of the runner inner surface to nano wire 61.Centre be cross runner 28, four ends of cross runner 28
Punch from four side card punch to be formed chip import and export part 111, chip import and export part 111 inject micro-pipe 19 then with injection
Pump 16 connects, and controls the flow field in runner.When three little square blocks are bonded for flow channel layer with 2D electrode layers 21,3D electrode layers 22
For the alignment block part 27 being aligned.
As shown in fig. 6, the principle that nano wire is steered in the middle of cross runner is：Any material all has certain Jie
Electrical properties, under DC Electric Field, they can induce generation electric dipole moment because of polarization.When the spatial distribution of extra electric field is in
Reveal heterogeneity, the material after polarization will be subject to a resulting net force, i.e. dielectrophoretic force, as 24 points there are 2 energizations in figure
62,22 point electrodes being not powered on 63 of point electrode, then nano wire 61 be subject to two energization the center of point electrode 62 line direction
Dielectrophoretic force 64, here it is effect of the electric field to nano wire 61；Meanwhile, the structure of cross runner 28 allows to by note
The flow velocity that pump 16 individually controls two mutually perpendicular directions is penetrated, is then combined according to vector and then control centre region is dot matrix area
The flow velocity size in domain and direction, and then the flow field forces 65 suffered by nano wire are controlled, this is effect of the flow field to nano wire 61.Electric field
High flexibility, accurate manipulation nano wire 61 are realized in combination with flow field.
Claims (9)
1. a kind of 3D entities electrode dielectrophoresis nano wire control system, it is characterised in that：Including 3D entity electrode dielectrophoresis nanometers
Line manipulation chip (11), electric control unit, flow field control unit and microcomputer (12)；
3D entities electrode dielectrophoresis nano wire manipulation chip (11) is including two panels 2D electrode layer (21), positioned at two panels 2D electrode
Two panels 3D electrode layer (22) and a piece of flow channel layer (23) between two panels 3D electrode layer (22) between layer (21)；Should
3D entity electrode dielectrophoresises nano wire manipulation chip (11) is formed with upper and lower symmetrical structure alignment package；Wherein, the 3D electrodes
Layer (22) manufacturing process include, using polydimethylsiloxane, in the microwell array of 3D electrode layers (22) conductive silver is filled
Slurry；Or polymethyl methacrylate is adopted, insert metal bar in the microwell array of 3D electrode layers (22)；
The electric control unit include signal generator (13), whistle control system (15), the signal generator (13) with
Whistle control system (15) connects；The whistle control system (15) and 3D entity electrode dielectrophoresises nano wire manipulation chip (11)
External connection part (24) connection；
The flow field control unit includes syringe pump (16), and the syringe pump (16) manipulates with 3D entity electrode dielectrophoresises nano wire
Chip (11) imports and exports part (111) connection；
The microcomputer (12) is connected with the signal generator (13) in electric control unit, microcomputer (12) control
Waveform, voltage swing, frequency, the phase place of the signal of signal generator (13) processed.
2. 3D entities electrode dielectrophoresis nano wire control system according to claim 1, it is characterised in that：Also include micro-
Mirror (18), by microscope (18) and the manipulation situation of microcomputer (12) real-time monitored nano wire.
3. 3D entities electrode dielectrophoresis nano wire control system according to claim 1, it is characterised in that：The 3D entities
Electrode dielectrophoresis nano wire manipulation chip (11) is imported and exported part (111) and is connected with waste collecting device (17).
4. 3D entities electrode dielectrophoresis nano wire control system according to claim 1, it is characterised in that：The electric field control
Unit processed also includes signal amplifier (14), and the signal amplifier (14) is connected with signal generator (13).
5. 3D entities electrode dielectrophoresis nano wire control system according to claim 1, it is characterised in that：The 2D electrodes
Layer (21) is including 3X4 array point electrodes (26), lead portion (25), external connection part (24), alignment block part (27).
6. 3D entities electrode dielectrophoresis nano wire control system according to claim 1, it is characterised in that：The 3D electrodes
Layer includes 3X4 array point electrodes (26), alignment block part (27).
7. 3D entity electrode dielectrophoresis nano wire control systems according to claim 5 or 6, it is characterised in that：The 3X4
Array point electrode (26) is that latticed form is arranged, and the number of point, the diameter of each point, spacing between points can become
It is dynamic.
8. 3D entities electrode dielectrophoresis nano wire control system according to claim 1, it is characterised in that：The 3D entities
Electrode dielectrophoresis nano wire manipulation chip (11) structure is 2D electrode layers (21) in ground floor and layer 5, and 3D electrode layers (22) exist
The second layer and the 4th layer, flow channel layer (23) is in third layer；Five layer segments are respectively according to respective alignment block part alignment bonding envelope
Dress.
9. 3D entities electrode dielectrophoresis nano wire control system according to claim 1, it is characterised in that：The flow channel layer
Including cross runner (28), import and export part (111), alignment block part (27).
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| CN108584865A (en) * | 2018-05-25 | 2018-09-28 | 湖北大学 | A kind of production method of control method and its ion detector based on the arrangement of overlength molybdenum oxide nanowires array |
| CN109866416B (en) * | 2019-03-12 | 2021-03-30 | 上海幂方电子科技有限公司 | Full-digital nano additive manufacturing system and working method thereof |
| CN110031519A (en) * | 2019-04-28 | 2019-07-19 | 河海大学常州校区 | A kind of graphene deposition aggregation parallel device, operating method and its application based on dielectrophoresis principle |
| TWI744667B (en) * | 2019-07-18 | 2021-11-01 | 義守大學 | Optically-induced dielectrophoresis system and its manufacturing method |
| CN111908421B (en) * | 2020-07-31 | 2024-01-05 | 江南大学 | Micro-nano self-assembly operation method and system based on photoinduction dielectrophoresis |
| CN114917969B (en) * | 2022-05-07 | 2024-09-10 | 中山大学·深圳 | Micro-nano machine control system and method based on five microelectrode alternating current electroosmosis |
| CN114918953B (en) * | 2022-05-07 | 2024-06-11 | 中山大学·深圳 | Electric field control micro-nano machine integrated system and method |
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| DE102005038121B3 (en) * | 2005-08-11 | 2007-04-12 | Siemens Ag | Process for the integration of functional nanostructures in micro- and nanoelectric circuits |
| US9044808B2 (en) * | 2009-03-03 | 2015-06-02 | The Johns Hopkins University | System and method for precision transport, positioning, and assembling of longitudinal nano-structures |
| WO2010104856A2 (en) * | 2009-03-09 | 2010-09-16 | Virginia Tech Intellectual Properties, Inc. | Devices and methods for contactless dielectrophoresis for cell or particle manipulation |
| CN101544351B (en) * | 2009-05-08 | 2011-12-14 | 东南大学 | Low-dimensional nanophase material high-flexibility assembling chip and application method |
| KR20110019551A (en) * | 2009-08-20 | 2011-02-28 | 고려대학교 산학협력단 | A method for producing a nanowire transistor |
| KR101451383B1 (en) * | 2013-08-07 | 2014-10-22 | 한국과학기술연구원 | Particle Control Device |
| CN104362078B (en) * | 2014-11-19 | 2017-02-01 | 沈阳建筑大学 | Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance |
| CN105013550B (en) * | 2015-07-09 | 2016-08-24 | 清华大学深圳研究生院 | Micro-fluidic chip clamp and micro-fluidic chip |
| CN105214747B (en) * | 2015-11-11 | 2017-05-10 | 东南大学 | Clamping-piece-type microfluidic device and manufacturing method |
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