CN104362078A - Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance - Google Patents
Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance Download PDFInfo
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- CN104362078A CN104362078A CN201410663518.3A CN201410663518A CN104362078A CN 104362078 A CN104362078 A CN 104362078A CN 201410663518 A CN201410663518 A CN 201410663518A CN 104362078 A CN104362078 A CN 104362078A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0042—Assembling discrete nanostructures into nanostructural devices
Abstract
The invention relates to the field of nano operation, in particular to a real-time feedback automatic assembling and manufacturing method for a nano-electronic appliance. According to the real-time feedback automatic assembling and manufacturing method, a closed-loop real-time detection assembling method is adopted, and driving signals with alternating current and direct current superposed are applied to microelectrodes through a signal generator, wherein alternating current signals serve as the driving signals, and direct current bias signals serve as detection signals; real-time feedback is achieved by scanning the jump of the direct current bias signals. A floating potential dielectrophoresis technique is adopted, and the problems that the effective assembling efficiency of the nano-electronic appliance is low and automatic and large-scale assembling is difficult to achieve are solved based on the closed-loop control concept; the real-time feedback automatic assembling and manufacturing method has the advantage that the physical and chemical features of nano conduits are not damaged; tiny changes of various kinds of force can be measured according to unique physical and chemical features of different nano materials.
Description
Technical field
The present invention relates to nano-manipulation field, specifically relate to a kind of nano electron device Automated assembly manufacture method of Real-time Feedback.
Background technology
Nanometer technology and nano-device are one of important development directions of current new and high technology.The breakthrough of nanometer technology and the application of nano-device depend on the progress of nanofabrication technique.According to international semiconductor development blueprint (International Technology Roadmap forSemiconductors, ITRS) technical report (ITRS2007) in December, 2007, to the year two thousand twenty, half pitch width of dynamic random access memory will be 14nm.Along with the continuous reduction of device size, by more and more close to the limit of existing electronic devices and components framework, the problem being difficult to go beyond run into is not only the physics limit of electronic device, also comprises the technical bottlenecks such as precise automatic processing and power problems simultaneously.Traditional silicon-base plane printing technology has constrained the further lifting of ic core piece performance and integrated level, and nanometer electronic device assembling and the manufacturing technology of Development of Novel array, automation and scale have become the research frontier that current International Technology circle is paid attention to the most.The R & D Level of nanofabrication technique and relevant device, directly reflect sciemtifec and technical sphere is made in countries and regions overall development strength at first system, this point has become worldwide common recognition.The lifting of nanometer electronic device Automated assembly manufacturing capacity, by the lifting of various fields technology with promote to produce tremendous influence
The research of monodimension nanometer material and device, as an important branch of nanoscale science and technology, has obtained and has paid close attention to greatly and development.As zinc oxide (Znic Oxide, abbreviation ZnO) nano wire is a kind of important wide bandgap semiconductor functional material, the UV Stimulated radiation under room temperature can be realized, possessing many good characteristics such as semiconductor, photoelectricity, piezoelectricity, thermoelectricity, air-sensitive and electrically conducting transparent and innocuousness etc., is a kind of important 1-dimention nano functional material.Can be used for manufacturing the important photoelectric devices such as ultraviolet light-emitting diode, laser diode, photodetector, also can be used for zno-based gas, biology, chemical sensor, also have broad application prospects in nanoelectronics fields such as optoelectronics solar cell, logical circuit and spin electric devices.
At present, nano electron device manufacturing technology is still in laboratory stage substantially, and existing assembling manufacturing technology also cannot realize automation, low cost manufacture, and this state of the art remains restriction nano-device investigation and application institute facing challenges sex chromosome mosaicism.Automated manufacturing is the development trend of nano-device.Utilize the floating potential dielectrophoresis method based on Real-time Feedback, realize the Automated assembly of nanometer pipeline and microelectrode, significant to nano-device Manufacturing Technology Development.
Summary of the invention
For solving the problem, the object of this invention is to provide a kind of nano electron device Automated assembly manufacture method of Real-time Feedback.
For achieving the above object, the technical solution used in the present invention is the nano electron device Automated assembly manufacture method of Real-time Feedback: it adopts closed loop to detect assembly method in real time, by signal generator, microelectrode is applied to the drive singal of alternating current-direct current superposition, wherein AC signal is as drive singal, and DC bias signal is as detection signal; Real-time Feedback is realized by the saltus step of scanning DC bias signal; Its concrete steps are as follows:
1) by nano material preliminary treatment;
2) the alternating current-direct current superposed signal needed for electric field is applied to respectively source electrode and the drain electrode of micro-electrode chip by probe; In the alternating current-direct current superposed signal apply this electrode, sinusoidal ac signal is as drive singal, scans, its scanning frequency from 300K-3MHz, 2 ~ 10 seconds sweep times;
3) pretreated 1 ~ 2 μ L nano material is passed through deposition probe titration at the source-drain electrode intermediate space place of electrode, when nano material drips electrode two ends, DC bias signal is as detection signal generation saltus step, within sweep time, if the saltus step of DC bias signal is presented on oscilloscope, the then experiment parameter that successfully assembles of quick obtaining, completes the assembling of this microelectrode, and automatically runs to after terminating sweep time and assemble lower pair of electrodes; If the saltus step of DC bias signal is not presented on oscilloscope, then this microelectrode assembles unsuccessfully, automatically runs to lower pair of electrodes and assembles.
Described nano material is zinc oxide nanowire, carbon nano-tube or cupric oxide nano line.
Described AC signal is as drive singal, and its peak-to-peak value voltage is 6 ~ 10V
p-p, frequency 300K-3MHz.
Described DC bias signal is as detection signal, and bias voltage is 5V.
Distance between described source-drain electrode is 1 μm.
Tool of the present invention has the following advantages: the present invention adopts floating potential dielectrophoresis technology, based on closed-loop control thought, solve the difficult problem that the effective efficiency of assembling of nanometer electronic device is low, be difficult to automation, scale assembling, have the advantages that not destroy the physics of nanometer pipeline own, chemical property, according to the physicochemical characteristics of different nano material uniqueness, the minor variations of various power can be measured; Adopt the automatized assembly method of closed-loop control to have very high operability with repeatable, the manufacture for nanometer electronic device provides new possible technique approach.
Accompanying drawing explanation
Fig. 1 is that assembling schematic diagram is moved in Automated condtrol position of the present invention;
Fig. 2 is that the present invention assembles front oscillographic oscillogram;
Fig. 3 is that the present invention assembles rear oscillographic oscillogram;
Fig. 4 is that ZnO nano-wire of the present invention aligns on substrate after Automated assembly.
Embodiment
Below in conjunction with accompanying drawing, the invention will be further described.
1. nano material preliminary treatment: ZnO nano-wire and alcohol mixed solution are put into test tube by 1:1000, and test tube is put into ultrasonic oscillator at 30 degrees Celsius of ultrasonic 10-15 minute, obtain even translucent solution after then taking out static 1 hour, obtain dispersion in the solution in single a large amount of ZnO nano-wire samples;
2. based on the Automated assembly process of closed-loop control system: because the distance between source-drain electrode is about 1 μm, be equivalent to electric capacity in circuit, when not overlapping ZnO nano-wire, AC signal can be transmitted by electrode, and direct current signal will be blocked; When medium is overlapped on electrode two ends, electrode and medium are equivalent to a resistance, and alternating current-direct current signal all can transmit; First by the drive singal of signal generator to the alternating current-direct current superposition that microelectrode applies, AC signal in the drive singal of alternating current-direct current superposition scans as drive singal, its scanning frequency is from 300K-3MHz, 2 ~ 10 seconds sweep times, when Fig. 2 is for riding over electrode two ends without ZnO nano-wire, oscillographic oscillogram; Then micro-fluidic end effector is automatically moved to target electrode gap location under micro-vision monitoring, keep the height presetting titration, and the output variable of titration is controlled by Micropump, ZnO nano-wire is added drop-wise in electrode, when nano material drips electrode, DC bias signal is as detection signal, and the saltus step of DC bias signal is presented on oscilloscope, Fig. 3 is when ZnO nano-wire rides over source-drain electrode two ends, oscillographic oscillogram.Therefore, when occurring this leaping voltage, just showing that electrode assembles successfully, recording the frequency values of this saltus step moment simultaneously, just can obtain the scope of effective driving frequency.
Claims (5)
1. the nano electron device Automated assembly manufacture method of Real-time Feedback, it is characterized in that: it adopts closed loop to detect assembly method in real time, by signal generator, microelectrode is applied to the drive singal of alternating current-direct current superposition, wherein AC signal is as drive singal, and DC bias signal is as detection signal; Real-time Feedback is realized by the saltus step of scanning DC bias signal; Its concrete steps are as follows:
1) by nano material preliminary treatment;
2) the alternating current-direct current superposed signal needed for electric field is applied to respectively source electrode and the drain electrode of micro-electrode chip by probe; In the alternating current-direct current superposed signal apply this electrode, sinusoidal ac signal is as drive singal, scans, its scanning frequency from 300K-3MHz, 2 ~ 10 seconds sweep times;
3) pretreated 1 ~ 2 μ L nano material is passed through deposition probe titration at the source-drain electrode intermediate space place of electrode, when nano material drips electrode two ends, DC bias signal is as detection signal generation saltus step, within sweep time, if the saltus step of DC bias signal is presented on oscilloscope, the then experiment parameter that successfully assembles of quick obtaining, completes the assembling of this microelectrode, and automatically runs to after terminating sweep time and assemble lower pair of electrodes; If the saltus step of DC bias signal is not presented on oscilloscope, then this microelectrode assembles unsuccessfully, automatically runs to lower pair of electrodes and assembles.
2. the nano electron device Automated assembly manufacture method of Real-time Feedback according to claim 1, is characterized in that: described nano material is zinc oxide nanowire, carbon nano-tube or cupric oxide nano line.
3. the nano electron device Automated assembly manufacture method of Real-time Feedback according to claim 1, is characterized in that: described AC signal is as drive singal, and its peak-to-peak value voltage is 6 ~ 10V
p-p, frequency 300K-3MHz.
4. the nano electron device Automated assembly manufacture method of Real-time Feedback according to claim 1, is characterized in that: described DC bias signal is as detection signal, and bias voltage is 5V.
5. the nano electron device Automated assembly manufacture method of Real-time Feedback according to claim 1, is characterized in that: the distance between described source-drain electrode is 1 μm.
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| CN201410663518.3A CN104362078B (en) | 2014-11-19 | 2014-11-19 | Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance |
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| CN201410663518.3A CN104362078B (en) | 2014-11-19 | 2014-11-19 | Real-time feedback automatic assembling and manufacturing method for nano-electronic appliance |
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| CN104362078A true CN104362078A (en) | 2015-02-18 |
| CN104362078B CN104362078B (en) | 2017-02-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105600743A (en) * | 2016-01-27 | 2016-05-25 | 东南大学 | 3D (three-dimensional) solid electrode dielectrophoresis nano wire operating and control system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070059947A1 (en) * | 2002-08-01 | 2007-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing carbon nanotube semiconductor device |
| US20070134866A1 (en) * | 2005-12-13 | 2007-06-14 | Jung-Tang Huang | Method for integrating carbon nanotube with CMOS chip into array-type microsensor |
| CN102445480A (en) * | 2011-09-23 | 2012-05-09 | 东南大学 | Method for preparing nano-gap electrodes on surface of nano-pore and in nano-pore |
| CN103626123A (en) * | 2013-10-25 | 2014-03-12 | 沈阳建筑大学 | Method for large-scale assembling and manufacturing of ZnO-base nanometer device by adopting floating potential dielectrophoresis |
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2014
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070059947A1 (en) * | 2002-08-01 | 2007-03-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing carbon nanotube semiconductor device |
| US20070134866A1 (en) * | 2005-12-13 | 2007-06-14 | Jung-Tang Huang | Method for integrating carbon nanotube with CMOS chip into array-type microsensor |
| CN102445480A (en) * | 2011-09-23 | 2012-05-09 | 东南大学 | Method for preparing nano-gap electrodes on surface of nano-pore and in nano-pore |
| CN103626123A (en) * | 2013-10-25 | 2014-03-12 | 沈阳建筑大学 | Method for large-scale assembling and manufacturing of ZnO-base nanometer device by adopting floating potential dielectrophoresis |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105600743A (en) * | 2016-01-27 | 2016-05-25 | 东南大学 | 3D (three-dimensional) solid electrode dielectrophoresis nano wire operating and control system |
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