CN101713788B - Method for testing electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending - Google Patents
Method for testing electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending Download PDFInfo
- Publication number
- CN101713788B CN101713788B CN2009102376761A CN200910237676A CN101713788B CN 101713788 B CN101713788 B CN 101713788B CN 2009102376761 A CN2009102376761 A CN 2009102376761A CN 200910237676 A CN200910237676 A CN 200910237676A CN 101713788 B CN101713788 B CN 101713788B
- Authority
- CN
- China
- Prior art keywords
- wire
- nano
- micron
- scale
- micro materials
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
The invention discloses a method for testing electromechanical properties of a nano-wire/micron-scale wire in condition of in-situ bending, and belongs to the field of in-situ testing for property of nano-scale/micron-scale materials. The method for testing electromechanical properties of a nano-wire/micron-scale wire in condition of in-situ bending is characterized in that a single nano-wire/micron-scale wire is fixed on a scanning probe and a conductive substrate, and the single nano-wire/micron-scale wire is bent by moving the substrate upwards and downwards; while bending the nano-wire/micron-scale wire, the electrical properties are measured by applying voltage testing current signals to the scanning probe and the conductive substrate. The method for testing electromechanical properties of a nano-wire/micron-scale wire in condition of in-situ bending has the advantages of simple and convenient operation, wire application range, short measuring time, and suitability for explaining and discovering excellent electromechanical properties of nano-scale/micron-scale materials.
Description
Technical field
The present invention relates to electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing in a kind of scanning probe microscopy, belong to Nano/micron material property in situ detection field.
Background technology
Realization is measured the manipulation of single nano/micron structure and in-situ performance, is Nano/micron material and based on the crucial matter of science and technology of bottleneck of the new device research of these materials all the time.1-dimention nano/micro materials is as the basic functional units in the minute mechanical and electrical system, and electric property, mechanical property and the power electric coupling performance that makes much of single 1-dimention nano/micro materials is the prerequisite of design novel nano/micron function element.Means of testing for the power electrical property of single 1-dimention nano/micro materials under bending roughly can be divided into following two kinds at present.
The first, the method for development single 1-dimention nano/micro materials power electric performance test in scanning electron microscope.2006; " Nano Letters "; Vol.6 has reported in last " based on the piezoelectric field effect transistor and the nanometer mechanics sensor of single zinc oxide nanowire " (the Piezoelectric field effect transistor andnanoforce sensor based on a single ZnO nanowire) literary composition of 2768-2772 and in scanning electron microscope, has utilized the metal probe of conduction to go crooked nano wire to measure its power electrical property simultaneously.Be equally in ESEM; 2007; " Advanced Materials "; Vol.19 has reported in last " based on the piezoelectricity gate diode of single zinc oxide nanowire " (the Piezoelectric gated diode of a single ZnO nanowire) article of 781-784 again a cover nanometer control system has been installed in the ESEM, utilizes two conducting probes in the nanometer control system to realize bending and power electric performance test to single nano material.Can realize bending and power electric performance test although in ESEM, utilize metal probe to single 1-dimention nano/micro materials; But because nano wire/micro wire is not fixed on the metal probe; Nano wire/micro wire is easy on metal probe, slide in the test process, causes being difficult to judge that the electric signal of test derives from material variation itself or contact problems.Simultaneously, because ESEM must operate under the high vacuum condition, therefore each experiment must vacuumize and to the debugging that nanometer is controlled, increased the test duration to single nano-wire/micro wire greatly system.
The second, utilize the transmission electron microscope of repacking to realize bending and power electric performance test to single nano-wire/micro wire.2007; " Nano Letters "; Vol.7 has reported in last " electronic transport of the single boron nitride nano-tube that deformation causes " (the Deformation-driven electrical transport of individualboron nitride nanotubes) literary composition of 632-637 and in transmission electron microscope, has utilized the metal probe of conduction to go crooked nanotube to measure its power electrical property simultaneously.Be equally in transmission electron microscope; 2008; " AppliedPhysics Letters "; Vol.92 has equally also reported in " electroresponse of the crooked single zinc oxide nanowire of original position under transmission electron microscope " (the In situ probing electrical response on bending of ZnO nanowiresinside transmission electron microscope) literary composition on 213105 and in transmission electron microscope, has utilized the metal probe of conduction to go crooked single zinc oxide nanowire to measure its power electrical property simultaneously.Although in the transmission electron microscope of repacking, utilize metal probe can realize bending and power electric performance test to single 1-dimention nano/micro materials; But the two ends of nano wire can not all be fixed; Problems such as the test duration is very long, and efficient is very low still are present in this method of testing.
In scanning probe system, utilizing the crooked single nano-wire/micro wire of probe original position to measure its power electrical property simultaneously is the most direct measuring method.Because scan-probe is operated under the atmospheric environment; Therefore need not vacuumize it; The two ends of nano wire can be fixed fully simultaneously; The sliding problem that does not have nano wire/micro wire in the test process is fully true and reliable for the signal of single nano-wire/micro wire power electric performance test.
Summary of the invention
The present invention provides in a kind of scanning probe microscopy the electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing, its objective is to utilize this method to realize single one-dimensional nano line/micro wire in-situ mechanical, electric property and electric power coupling performance are measured.
A kind of electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing; It is characterized in that; Single nano wire/micro wire is fixed on scanning probe tip and the conductive substrates, moves up and down realization to the crooked of single nano wire/micro wire with stretch through the control substrate.When nano wire/micro wire is crooked,, realize the electricity performance measurement of nano wire/micro wire under bending through on scan-probe and conductive substrates, applying voltage testing current signals.
The present invention provides electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing in a kind of scanning probe microscopy; Can realize the flexural deformation of single 1-dimention nano/micro materials original position in scanning probe microscopy, elastic performance, plastic property and fracture process that can exosyndrome material.Simultaneously it can also test the test of single 1-dimention nano/micro materials power electric coupling performance, it is characterized in that this method carries out as follows:
1. single 1-dimention nano/micro materials is fixed on the needle point of scanning probe microscopy with conductive silver glue.
2. the CD-ROM drive motor of gated sweep probe microscope lets the substrate of conduction contact an other end of single 1-dimention nano/micro materials, and utilizes conductive silver glue to fix, and this moment, the two ends of 1-dimention nano/micro materials were all fixing by well.
3. be moved further substrate through CD-ROM drive motor, the single 1-dimention nano/micro materials that is fixed also can occur bending and deformation, and its deformation extent depends on the distance of substrate and scanning probe microscopy needle point.
4. when 1-dimention nano/micro materials bent deformation, the mode of measuring electric current through on-load voltage in needle point and substrate realized the test to single 1-dimention nano/micro materials power electrical property.
The present invention compared with prior art; Have the following advantages and the high-lighting effect: the present invention need not reequip scanning probe microscopy the test of the crooked in position electrical property of exerting oneself of single 1-dimention nano/micro materials in scanning probe microscopy, relies on existing scanning probe microscopy can accomplish the test to this performance.Simultaneously, the method for test is simple, the needed time of specimen very short (about 20 minutes), can accomplish the detection to a large amount of Nano/micron materials in the short time.And single 1-dimention nano/micro materials two ends are all fixing by well in the test process, do not have the current signal instability problem, 1-dimention nano/micro materials problem such as on electrode, slide.The development and Design of 1-dimention nano/micro materials in fields such as MEMS, semiconductor devices and sensors that be embodied as of this method provides the high-efficiency reliable data result.
Description of drawings
Fig. 1 is fixed on the optical photograph on the scanning probe microscopy needle point for single zinc oxide micrometer line one end.
Fig. 2 is fixed on needle point and suprabasil optical microscope photograph for single zinc oxide micrometer line two ends by conductive silver glue.
The optical microscope photograph that Fig. 3 is bent for single zinc oxide micrometer line.
Embodiment
As shown in Figure 1, utilize conductive silver glue to be fixed on single 1-dimention nano/micro materials on the needle point of scanning probe microscopy.The CD-ROM drive motor of gated sweep probe microscope then lets the other end in contact conductive substrates of single 1-dimention nano/micro materials, and fixes with conductive silver glue, and is as shown in Figure 2.Be moved further conductive substrates through CD-ROM drive motor, this moment, single 1-dimention nano/micro materials will be bent, and as shown in Figure 3, its degree of crook depends on the distance that conductive substrates moves.Equally, move in the opposite direction through the controlling and driving motor, crooked single 1-dimention nano/micro materials can become straight again again.When single 1-dimention nano/micro materials is bent distortion; Apply different voltages with different in needle point and substrate through the conductive module in the scanning probe microscopy; Gather current value simultaneously, can realize power electric performance test the single 1-dimention nano/micro materials of bending.
Claims (1)
1. electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending method of testing is characterized in that this method carries out as follows:
1) be fixed on single 1-dimention nano/micro materials on the needle point of scanning probe microscopy with conductive silver glue;
2) CD-ROM drive motor of gated sweep probe microscope lets the substrate of conduction contact an other end of single 1-dimention nano/micro materials, and utilizes conductive silver glue to fix, and this moment, the two ends of 1-dimention nano/micro materials were all fixing by well;
3) be moved further substrate through CD-ROM drive motor, the single 1-dimention nano/micro materials that is fixed also can occur bending and deformation, and its deformation extent depends on the distance of substrate and scanning probe microscopy needle point;
4) when 1-dimention nano/micro materials bends deformation, the mode of measuring electric current through on-load voltage in needle point and substrate realizes the test to single 1-dimention nano/micro materials power electrical property.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102376761A CN101713788B (en) | 2009-11-20 | 2009-11-20 | Method for testing electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009102376761A CN101713788B (en) | 2009-11-20 | 2009-11-20 | Method for testing electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101713788A CN101713788A (en) | 2010-05-26 |
| CN101713788B true CN101713788B (en) | 2012-07-18 |
Family
ID=42417599
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009102376761A Expired - Fee Related CN101713788B (en) | 2009-11-20 | 2009-11-20 | Method for testing electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101713788B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111487284A (en) * | 2019-10-30 | 2020-08-04 | 华中科技大学 | Phase change material nanowire assembling and testing device and method |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101949957B (en) * | 2010-09-10 | 2013-04-17 | 东华大学 | Method for precisely moving nanowire by taking semi-conductor nanowire as probe |
| CN102565135B (en) * | 2011-12-27 | 2014-06-18 | 北京科技大学 | Electromechanical property test method based on in-situ bending of zinc oxide micron line |
| CN103031610A (en) * | 2012-12-07 | 2013-04-10 | 北京航空航天大学 | Method for preparing single ultra-long Cu nanowire and measuring electrical properties of the nanowire |
| CN106124543B (en) * | 2016-07-08 | 2019-04-09 | 东南大学 | Nano material exchange electrical performance testing device and method based in situ TEM |
| CN107089643A (en) * | 2017-04-26 | 2017-08-25 | 中国科学院理化技术研究所 | A kind of fixation of one-dimensional nano line and the method for controllable operating |
| CN110933278B (en) * | 2019-12-16 | 2021-07-13 | 昆山丘钛微电子科技有限公司 | Silver colloid resistivity control method of voice coil motor, camera module and jig |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1995962A (en) * | 2006-12-29 | 2007-07-11 | 北京工业大学 | Device and method for testing in-situ mechanical property of single nano-wire in scanning electron microscope |
| CN101109687A (en) * | 2007-07-20 | 2008-01-23 | 北京工业大学 | Testing device for force-electricity property under nanowire original position stretching in transmission electron microscope |
-
2009
- 2009-11-20 CN CN2009102376761A patent/CN101713788B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1995962A (en) * | 2006-12-29 | 2007-07-11 | 北京工业大学 | Device and method for testing in-situ mechanical property of single nano-wire in scanning electron microscope |
| CN101109687A (en) * | 2007-07-20 | 2008-01-23 | 北京工业大学 | Testing device for force-electricity property under nanowire original position stretching in transmission electron microscope |
Non-Patent Citations (1)
| Title |
|---|
| 田孝军等.机械人化纳米操作系统驱动器驱动与探针定位研究.《仪器仪表学报》.2007,第28卷(第7期),1223-1228. * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111487284A (en) * | 2019-10-30 | 2020-08-04 | 华中科技大学 | Phase change material nanowire assembling and testing device and method |
| CN111487284B (en) * | 2019-10-30 | 2022-04-29 | 华中科技大学 | Phase change material nanowire assembling and testing device and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101713788A (en) | 2010-05-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101713788B (en) | Method for testing electromechanical properties of nano-wire/micron-scale wire in condition of in-situ bending | |
| CN101109687B (en) | Testing device for force-electricity property under nanowire original position stretching in transmission electron microscope | |
| Li et al. | Characterization of semiconductor surface conductivity by using microscopic four-point probe technique | |
| Neuzil et al. | Electrically controlled giant piezoresistance in silicon nanowires | |
| Petersen et al. | Scanning microscopic four-point conductivity probes | |
| Cui et al. | Magnetic force driven nanogenerators as a noncontact energy harvester and sensor | |
| CN1995962A (en) | Device and method for testing in-situ mechanical property of single nano-wire in scanning electron microscope | |
| CN103292685B (en) | A kind of preparation method of bending-type flexible and transparent strain transducer | |
| Nabar et al. | Piezoelectric ZnO nanorod carpet as a NEMS vibrational energy harvester | |
| CN101113946B (en) | Force and electrical behavior testing device under Nanometer lines in-situ compressing in transmission electron microscope | |
| CN201653804U (en) | Nano-indentation system based on scanning electron microscope | |
| CN101793911B (en) | Nano indentation system based on scanning electron microscope | |
| Li et al. | Contactless probing of the intrinsic carrier transport in single-walled carbon nanotubes | |
| CN201083669Y (en) | Transmission electron microscope nanometer line in situ compressing electromechanical property test device | |
| CN105759130B (en) | Nano wire piezoelectric coefficient d33Measuring device and measuring method | |
| CN100587459C (en) | Nano material drawing device in scanning electron microscope driven by piezoelectric ceramic piece | |
| He et al. | Time-domain AC characterization of silicon carbide (SiC) nanoelectromechanical switches toward high-speed operations | |
| CN102565135B (en) | Electromechanical property test method based on in-situ bending of zinc oxide micron line | |
| CN201066335Y (en) | A testing device for the electric performance of nano line original position downward pull force in transmission electric lens | |
| CN201034883Y (en) | Single nano line in-situ mechanics all-round property testing device in scanning electron microscope | |
| CN201518226U (en) | Composite cantilever beam needlepoint for micro-nano microtechnique | |
| Agrawal et al. | The evolving role of experimental mechanics in 1-D nanostructure-based device development | |
| Böttger et al. | Exploitation of giant piezoresistivity–CNT sensors fabricated with a wafer-level technology | |
| CN106706424A (en) | Uniaxial strain loading table for micro-nano material multi-field coupling testing | |
| CN111649818B (en) | Passive sensor based on structure is super smooth |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120718 Termination date: 20131120 |