CN105590849B - A method of it solving HDP PSG processing procedure caliper uniformities and continues high jump - Google Patents
A method of it solving HDP PSG processing procedure caliper uniformities and continues high jump Download PDFInfo
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- CN105590849B CN105590849B CN201610109837.9A CN201610109837A CN105590849B CN 105590849 B CN105590849 B CN 105590849B CN 201610109837 A CN201610109837 A CN 201610109837A CN 105590849 B CN105590849 B CN 105590849B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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Abstract
The invention discloses a kind of methods that solution HDP PSG processing procedure caliper uniformities continue high jump, by the relative position for optimizing spacer and electron adsorption apparatus surface in cavity cleaning, spacer is set to be covered in electron adsorption apparatus surface during the cleaning of entire cavity, prevent by-product in the generation of electron adsorption device edge surface micro-porous adsorption process, simultaneously, also oxygen plasma can be coordinated more thoroughly to handle electron adsorption apparatus surface, the trend that wafer thickness homogeneity is constantly deteriorated in entire electron adsorption device maintenance period can effectively be inhibited, so that caliper uniformity is greatly improved, to improve the yield and stability of product, reliability.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology fields, and HDP can be effectively solved more particularly, to one kind
The method that PSG processing procedure caliper uniformities continue high jump.
Background technology
In semiconductor integrated circuit manufacturing process, PSG (phosphorosilicate glass) films can be caught due to low with dielectric coefficient
Sodium, potassium plasma, and the characteristic of absorption steam are obtained, protects influence of the follow-up process to active area well as barrier layer
(especially metal ion, which is diffused into active area, leads to shorted devices and the influence failed).Meanwhile PSG film film quality is relatively soft,
Be conducive to CMP (chemical mechanical grinding) planarizations, be widely used as PMD (before-metal medium layer).
However, carrying out HDP (high-density plasmas using the SPEED Max model boards of such as LAM (Fan Lin companies)
Body) PSG depositing technics when, the caliper uniformity of film have occurred with the extension of ESC (electron adsorption device) usage time and
The phenomenon that being constantly deteriorated, and cmp planarizationization is also affected therewith.
During the use of for example above-mentioned board, in order to make its cavity (Chamber) reach the optimal ring needed for long film
Border, cleaning (Clean) process is essential link.Cleaning is for removing the film of deposition in the cavity.To above-mentioned machine
When the cavity of platform is cleaned, it will usually in such a way that PEC (AlN materials silicon chip) is placed on the surfaces ESC, for protecting ESC
From the bombardment of plasma (Plasma).
The cleaning of HDP PSG processing procedures generally comprises two ways, and one is directly use HF (radio-frequency generator) in the cavity
Dissociate NF3It generates F ion plasma to be cleaned and (be referred to as Bright clean), cleaning action is strong, to remove chamber
Internal bulk film；In order to reduce damages of the HF to the surfaces ESC, extends the service life of ESC, PEC can be covered in ESC tables
It is protected in face.Another kind is that the F ion plasma dissociated is imported into cavity using RPS (remote plasma system)
Inside cleaned (be referred to as Dark clean), cleaning action is weaker, when removing Bright clean in cavity etc. from
Daughter is difficult to the film of the corner location reached；Due to the use without HF, thus it is to be provided separately PEC and ESC, makes
There is a certain distance between the surfaces PEC and ESC.
ESC realizes temperature control control for adsorbing wafer (Wafer), and to wafer.Wafer uses ESC in actual (tube) length film
Suck wafer.The surface of ESC has densely covered micropore, i.e., by making the surface of ESC have certain roughness so that wafer with
There are certain gaps between ESC, to form gas flow, He (helium) can be flowed between wafer and ESC by controlling
Amount, to achieve the purpose that wafer temperature control.
Wherein, when carrying out Dark clean, some by-products can enter from the distance between wafer and ESC, and assemble
It is adsorbed by the micropore on the surfaces ESC at the edge of ESC, to be filled and led up the micropore in the surfaces the ESC region and become smooth so that
Wafer becomes tight in the suction on the position and the surfaces ESC.Due to being equipped with cooling device, the suction of above-mentioned wafer and the surfaces ESC in ESC
State can make the temperature of crystal round fringes be less than the temperature of crystal circle center, and the temperature uniformity at crystal circle center and edge is caused to become
Difference, this can lead to the difference of the long film rate of wafer, so that the homogeneity of wafer film thickness is deteriorated.
Since there are the above problems, in ESC defects liability periods, ESC edge surfaces will become more and more smooth, and suction is increasingly
Tightly, it causes the cooling effect of position He also to taper into, ESC is caused to maintain latter stage, caliper uniformity worse and worse, that is, occurs
Caliper uniformity continues the phenomenon that high jump.This phenomenon degradating trend when continuously running goods is especially apparent.
Invention content
It is an object of the invention to overcome drawbacks described above of the existing technology, it is thick to provide a kind of solution HDP PSG processing procedures
The method that degree homogeneity continues high jump, to improve the temperature uniformity of wafer entirety, to effectively inhibit caliper uniformity long-term
The trend of deterioration.
To achieve the above object, technical scheme is as follows：
A method of it solving HDP PSG processing procedure caliper uniformities and continues high jump, including：
Using a cavity, electron adsorption device, for adsorbing wafer, the electron adsorption device are equipped in the cavity
Surface has densely covered micropore to keep certain roughness；
When carrying out cavity cleaning using plasma, it is covered in electron adsorption apparatus surface using a spacer, to
Cleaning by-product is avoided to enter between spacer and electron adsorption apparatus surface and by the micro-porous adsorption, so that electron adsorption
The roughness of apparatus surface is maintained；
When carrying out HDP PSG processing procedures after cavity cleaning, by wafer adsorption in electron adsorption apparatus surface, using described
The gap that micropore generates between electron adsorption apparatus surface and wafer forms gas flow, is inhaled in wafer and electronics by control
The amount that helium is flowed between the gap on adsorption device surface carries out temperature control control, so that between crystal round fringes and center to wafer
Temperature is consistent.
Preferably, after cavity cleaning, the spacer is made to be detached from electron adsorption apparatus surface, first with containing oxygen plasma
Body handles electron adsorption apparatus surface, with to the by-product that may be adsorbed on when cavity cleans in the micropore
It is removed, then carries out HDP PSG processing procedures again.
Preferably, the clean mode of the cavity includes：Directly radio-frequency generator is used to dissociate NF in the cavity3Generate F
Ion plasma is cleaned；Or the F ion plasma dissociated is imported into chamber using remote plasma system
It is cleaned in vivo.
Preferably, the spacer is AlN material silicon chips, and shape size is corresponding with electron adsorption apparatus surface.
Preferably, it uses radio-frequency generator to generate in the cavity and contains oxygen plasma.
Preferably, further include that CMP is carried out to the PSG films of crystal column surface deposition after carrying out HDP PSG processing procedures.
Preferably, cooling device is equipped in the electron adsorption device.
Preferably, the cooling device uses water-cooling pattern.
Preferably, the spacer is covered in electron adsorption apparatus surface with laminating type.
It can be seen from the above technical proposal that the present invention is by optimizing spacer and electron adsorption device table in cavity cleaning
The relative position in face makes spacer be covered in electron adsorption apparatus surface, it is therefore prevented that by-product during the cleaning of entire cavity
In the generation of electron adsorption device edge surface micro-porous adsorption process, meanwhile, it can also coordinate oxygen plasma to fill electron adsorption
It sets surface more thoroughly to be handled, can effectively inhibit wafer thickness homogeneity in entire electron adsorption device maintenance period continuous
The trend of variation so that caliper uniformity is greatly improved, to improve the yield and stability, reliability of product.
Description of the drawings
Fig. 1 is a kind of method block diagram for solving HDP PSG processing procedure caliper uniformities and continuing high jump of the present invention.
Specific implementation mode
Below in conjunction with the accompanying drawings, the specific implementation mode of the present invention is described in further detail.
In specific implementation mode of the invention below, referring to Fig. 1, Fig. 1 is a kind of solution HDP PSG systems of the present invention
Journey caliper uniformity continues the method block diagram of high jump.As shown in Figure 1, a kind of solution HDP PSG processing procedure thickness of the present invention is uniform
Property continue high jump method, including：
Using a cavity, electron adsorption device, for adsorbing wafer, the electron adsorption device are equipped in the cavity
Surface has densely covered micropore to keep certain roughness；
When carrying out cavity cleaning using plasma, it is covered in electron adsorption apparatus surface using a spacer, to
Cleaning by-product is avoided to enter between spacer and electron adsorption apparatus surface and by the micro-porous adsorption, so that electron adsorption
The roughness of apparatus surface is maintained；
When carrying out HDP PSG processing procedures after cavity cleaning, by wafer adsorption in electron adsorption apparatus surface, using described micro-
The gap that hole generates between electron adsorption apparatus surface and wafer forms gas flow, by controlling in wafer and electron adsorption
The amount that helium is flowed between the gap of apparatus surface carries out temperature control control, so that the temperature between crystal round fringes and center to wafer
Degree is consistent.
As an optional embodiment, the SPEED Max model boards of such as LAM (Fan Lin companies) can be used to carry out
HDP (high-density plasma) PSG depositing technics.Electron adsorption device (ESC) is equipped in the cavity of the board, wafer is in reality
When the long film in border, for adsorbing wafer.The surface of ESC has densely covered micropore, it is therefore an objective to by making the surface of ESC have centainly
Roughness so that when wafer is placed on the surfaces ESC, can between ESC there are certain gap (certainly small gap),
To form gas flow.When carrying out HDP PSG depositing technics, He (helium can be flowed between wafer and ESC by controlling
Gas) amount, to achieve the purpose that wafer temperature control.Cooling device is equipped in ESC, and it is cold to ESC progress that water-cooling pattern can be used
But it protects.
Wherein, the clean mode of cavity may include：Directly radio-frequency generator (HF) is used to dissociate NF in the cavity3Generate F
Ion plasma is cleaned and (is referred to as Bright clean), and cleaning action is stronger, to remove the bulk in cavity
Film；Or the F ion plasma dissociated is imported into cavity using remote plasma system (RPS) and is cleaned
(being referred to as Dark clean), cleaning action is weaker, and plasma is difficult to when removing Bright clean in cavity
The film of the corner location reached.
As an optional embodiment, PEC may be used in spacer, is AlN material silicon chips.Also, the shape of PEC
And size should be corresponding with the form and dimension on the surfaces ESC, so as to which the surface of ESC is completely covered.It is covered using PEC
When the surface of ESC, laminating type can be used and covered, to may make that the gap between PEC and ESC is minimum, with maximum
It prevents to limit the by-product that generates in the process of cleaning from entering the surface of ESC by its micro-porous adsorption, and occurs undesirable to ESC
The phenomenon that micropore on surface is filled and led up is carrying out HDP PSG so that the roughness on the surfaces ESC is maintained to may make
When depositing technics, helium can uniformly flow into the entire scope of crystal circle center to edge between wafer and ESC.
As a preferred embodiment, after carrying out cavity cleaning, PEC is jacked up from the surfaces ESC, PEC is made to be detached from ESC
Surface, to being generated at a distance from enough between ESC in PEC.PEC can also be directly taken out from cavity.It then, can be
It is generated using radio-frequency generator in cavity and contains oxygen plasma, utilize being handled the surfaces ESC containing oxygen plasma for generation.
If when cavity above-mentioned cleans, it is also possible to there is a small amount of by-product to enter the surface of ESC from the edge of ESC, and further
It is adsorbed in the micropore on the surfaces ESC, then the surfaces ESC can be bombarded using containing oxygen plasma by coordinating, you can
The surfaces ESC by-product that may be present is completely removed.
After carrying out cavity cleaning and containing oxygen plasma treatment, you can carry out HDP PSG processing procedures to wafer.Into
Before row technique, wafer is placed and is adsorbed on ESC.Since the surfaces ESC are not entered by by-product when cavity cleans
And be adsorbed in the micropore on the surfaces ESC, thus the roughness on the surfaces ESC is maintained.When wafer adsorption is on ESC, these
Micropore promotes to generate gap between wafer and ESC, can pass through the gas flow of air-flow to be formed.At this point, being existed by control
The amount of He (helium) is flowed between wafer and ESC, so that it may achieve the purpose that wafer uniform temperature control.
After carrying out HDP PSG processing procedures, CMP can be carried out by the PSG films deposited to crystal column surface, to make acquisition
PSG thin film planarizations.
By carrying out steeping sour processing to the wafer after existing HDP PSG processing procedures, from the centers wafer PSG and edge before and after bubble acid
Thickness difference data (WER) comparison is as can be seen that crystal round fringes are because temperature is relatively low, and deposition rate is fast so that edge is thinner than center
Film is more loose, and WER is larger and amplitude bigger.And the above method after present invention optimization is used, when carrying out cavity clean,
Since PEC is covered in the surfaces ESC always, absorption of the by-product in ESC surface micropores in clean is effectively prevented, and same
Shi Peihe oxygen plasmas bombard the surfaces ESC, drive away the clean by-products adsorbed in ESC micropores, improve
Wafer lip temperature homogeneity.It can be seen that it is more uniformed from the WER comparisons of wafer PSG before and after bubble acid so that thickness is equal
One property is greatly improved, and the continuous trend to run down when goods of running is inhibited.Because of wafer when also can effectively prevent CMP
The problem at center and the different caused planarization degree difference of edge polishing rate, to improve the yield and stabilization of product
Property, reliability.
In conclusion relative position of the present invention by spacer and electron adsorption apparatus surface in optimization cavity cleaning,
Spacer is set to be covered in electron adsorption apparatus surface during the cleaning of entire cavity, it is therefore prevented that by-product is filled in electron adsorption
The generation of edge surface micro-porous adsorption process is set, meanwhile, it can also coordinate oxygen plasma to carry out more electron adsorption apparatus surface
Thoroughly processing, can effectively inhibit the trend that wafer thickness homogeneity is constantly deteriorated in entire electron adsorption device maintenance period,
So that caliper uniformity is greatly improved, to improve the yield and stability, reliability of product.
Above-described to be merely a preferred embodiment of the present invention, the embodiment is not to be protected to limit the patent of the present invention
Range, therefore equivalent structure variation made by every specification and accompanying drawing content with the present invention are protected, similarly should be included in
In protection scope of the present invention.
Claims (9)
1. a kind of method for solving HDP PSG processing procedure caliper uniformities and continuing high jump, which is characterized in that including：
Using a cavity, electron adsorption device is equipped in the cavity, for adsorbing wafer, the surface of the electron adsorption device
Certain roughness is kept with densely covered micropore；
Using plasma carry out cavity cleaning when, be covered in electron adsorption apparatus surface using a spacer, with to avoid
Cleaning by-product enters between spacer and electron adsorption apparatus surface and by the micro-porous adsorption, so that electron adsorption device
The roughness on surface is maintained；
When carrying out HDP PSG processing procedures after cavity cleaning, by wafer adsorption in electron adsorption apparatus surface, existed using the micropore
The gap generated between electron adsorption apparatus surface and wafer forms gas flow, by controlling in wafer and electron adsorption device
The amount that helium is flowed between the gap on surface carries out temperature control control to wafer, so that the temperature between crystal round fringes and center is protected
It holds consistent.
2. the method according to claim 1 for solving HDP PSG processing procedure caliper uniformities and continuing high jump, which is characterized in that
After cavity cleaning, the spacer is made to be detached from electron adsorption apparatus surface, electron adsorption is filled first with containing oxygen plasma
It sets surface to be handled, to be removed the by-product that may be adsorbed on when cavity cleans in the micropore, then
HDP PSG processing procedures are carried out again.
3. the method according to claim 1 or 2 for solving HDP PSG processing procedure caliper uniformities and continuing high jump, feature exist
In the clean mode of cavity includes：Directly radio-frequency generator is used to dissociate NF in the cavity3Generate F ion plasma
It is cleaned；Or the F ion plasma dissociated is imported into cavity using remote plasma system and is cleaned.
4. the method according to claim 1 or 2 for solving HDP PSG processing procedure caliper uniformities and continuing high jump, feature exist
In the spacer is AlN material silicon chips, and shape size is corresponding with electron adsorption apparatus surface.
5. the method according to claim 2 for solving HDP PSG processing procedure caliper uniformities and continuing high jump, which is characterized in that
It uses radio-frequency generator to generate in the cavity and contains oxygen plasma.
6. the method according to claim 1 or 2 for solving HDP PSG processing procedure caliper uniformities and continuing high jump, feature exist
In, further include after carrying out HDP PSG processing procedures, to crystal column surface deposition PSG films carry out CMP.
7. the method according to claim 1 or 2 for solving HDP PSG processing procedure caliper uniformities and continuing high jump, feature exist
In equipped with cooling device in the electron adsorption device.
8. the method according to claim 7 for solving HDP PSG processing procedure caliper uniformities and continuing high jump, which is characterized in that
The cooling device uses water-cooling pattern.
9. the method according to claim 1 or 2 for solving HDP PSG processing procedure caliper uniformities and continuing high jump, feature exist
In the spacer is covered in electron adsorption apparatus surface with laminating type.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882360A (en) * | 2014-02-27 | 2015-09-02 | 东京毅力科创株式会社 | Cleaning method for plasma processing apparatus |
| CN104979190A (en) * | 2015-06-29 | 2015-10-14 | 上海华力微电子有限公司 | Method for improving distribution uniformity of phosphorus in phosphorus silicon glass |
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| JP5364514B2 (en) * | 2009-09-03 | 2013-12-11 | 東京エレクトロン株式会社 | Cleaning method in chamber |
| KR101125430B1 (en) * | 2009-09-04 | 2012-03-28 | 주식회사 디엠에스 | Workpiece de-chucking device of plasma reactor for dry-cleaning the inside of chamber and electro static chuck during de-chucking workpiece, and workpiece de-chucking method of the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882360A (en) * | 2014-02-27 | 2015-09-02 | 东京毅力科创株式会社 | Cleaning method for plasma processing apparatus |
| CN104979190A (en) * | 2015-06-29 | 2015-10-14 | 上海华力微电子有限公司 | Method for improving distribution uniformity of phosphorus in phosphorus silicon glass |
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