CN105576147A - Packaging structure of OLED device - Google Patents
Packaging structure of OLED device Download PDFInfo
- Publication number
- CN105576147A CN105576147A CN201510914561.7A CN201510914561A CN105576147A CN 105576147 A CN105576147 A CN 105576147A CN 201510914561 A CN201510914561 A CN 201510914561A CN 105576147 A CN105576147 A CN 105576147A
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- CN
- China
- Prior art keywords
- oled
- rete
- cofferdam
- layer
- filling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Abstract
The invention discloses a packaging structure, in particular to a packaging structure of an OLED device. The packaging structure comprises a flexible substrate, an OELD device, an inorganic protection layer, an annular cofferdam film layer and a filling film layer, wherein the OELD device, the inorganic protection layer, the cofferdam film layer and the filling film layer are arranged on the flexible substrate. Doping particles are doped in the inorganic protection layer and are mixtures of aluminum oxide, silicon nitride and terbium (III) trioxide. According to the invention, a technical defect in the prior art is overcome that package materials appear to be black after being solidified via laser. Via the improved packaging materials, a colorless and transparent package structure of the OLED device is formed.
Description
Technical field
The present invention relates to a kind of encapsulating structure, specifically the encapsulating structure of OLED.
Background technology
Organic electroluminescent LED (Organiclight-emittingdiodes, OLED) device, because having numerous outstanding advantages, has bright prospects in flat panel display and planar light source field.The development trend that flexible OLED is following especially, will be widely used in Wearable device.But the development of OLED product technology is also subject to the restriction of device lifetime, light extraction efficiency unfavorable factor.Organic functional material for the formation of OLED is having under steam and oxygen existent condition, irreversible oxidation reaction can be there is, active metal negative electrode for the formation of OLED can be etched under water oxygen environment, and this shortens the life-span of OLED to a great extent.Owing to there is surface plasma loss, the bend loss at organic and inorganic interface, the total reflection loss of exiting surface-Air Interface, only have an appointment 20% luminous energy shine outside OLED, all the other light of about 80% are limited in OLED inside, make device light extraction efficiency low.
As shown in Figure 2, in order to improve light extraction efficiency, prior art provides a kind of encapsulating structure of flexible OLED devices, comprise and be arranged at OLED 11 to be packaged on flexible base, board 10, inorganic protective layer 12, cofferdam rete 13, microballoon canopy 15 and filling rete 14, inorganic protective layer is coated in described OLED, cofferdam rete closes the surrounding being arranged at inorganic protective layer, fill rete to be arranged between cofferdam rete and inorganic protective layer and to be coated on inorganic protective layer, microballoon canopy is arranged at filling film layer, method for packing key step of the present invention is for form OLED on flexible substrates successively, inorganic protective layer, cofferdam rete, fill life-span and the light emission rate of rete and microballoon canopy OLED, method for packing provided by the invention, there is stronger operability, effectively can ensure encapsulation precision, improve packaging efficiency.
But still there is following technological deficiency in above-mentioned prior art:
Described inorganic protective layer is adopt the mode of laser package to carry out encapsulating with filling rete; in order to improve the absorbability of encapsulating material to laser; usually need to add the doping such as bismuth oxide or vanadium oxide particle wherein; and these materials are black after laser curing; time in it is applied to Transparence Display device (certainly also comprising other devices such as transparent light source); can be visible in the external world, thus have a strong impact on the attractive in appearance of product.
Summary of the invention
The invention is intended to, by improvement encapsulating material, form water white OLED encapsulating structure.
The encapsulating structure of the OLED in this programme, comprise flexible base, board, be arranged at the OLED on flexible base, board, inorganic protective layer, cofferdam rete and fill rete, cofferdam rete ringwise, described OLED, inorganic protective layer and filling rete are all located in the rete of cofferdam, described inorganic protective layer is coated in described OLED with filling rete successively, and described cofferdam rete fits tightly all sides at described filling rete; Be mixed with doping particle in described inorganic protective layer, described doping particle is the mixture of aluminium oxide, silicon nitride and terbium sesquioxide.
Terbium sesquioxide dominant absorption infrared light and ultraviolet light, therefore without absorbing in visible-range, thus (as infrared laser or the Ultra-Violet Laser) melting of its laser through specific wavelength and solidification after be water white, the aesthetic property of Transparence Display device can not be affected.Terbium sesquioxide and aluminium oxide, silicon nitride compatibility are formed the composition of the particle that adulterates, be then water white form with the encapsulated layer (inorganic protective layer and filling rete) that laser package mode is formed.
Further, described filling rete is divided into nearly oled layer and oled layer far away, and in nearly oled layer, the particle diameter of doping particle is between 12 ~ 34 nanometers, and in oled layer far away, the particle diameter of doping particle is between 570 ~ 1200 nanometers.
The doping grain diameter of nearly oled layer is less than oled layer far away, the overall refractive index of so nearly oled layer is greater than the overall refractive index of filling rete, wherein nearly oled layer is relatively near OLED, therefore, the light that light-emitting diode sends first by the nearly oled layer that refractive index is higher, and then can improve overall amount of light.Then, light is doped granule particles scattering by oled layer far away again, and then produces uniform light-out effect.
Further, the width of described cofferdam rete is 0.5 ~ 1.5 ㎜, is highly 50 ~ 100 μm, and cofferdam rete adopts photosensitive resin, and viscosity is 550000 ~ 650000mPas.
Further, the mass concentration of described doping particle in nearly oled layer and oled layer far away is all between 0.001wt% and 0.5wt%.
The mass concentration of doping particle is too low, can reduce the refractive index of inorganic protective layer and fill the scattered power of rete; If mass concentration is too high, doping particle easily condenses and causes light-shading effect, affects light-out effect.
Accompanying drawing explanation
Fig. 1 is the structural representation of the encapsulating structure of embodiment of the present invention OLED;
Fig. 2 is the structural representation of the encapsulating structure of OLED in prior art.
Fig. 3 fills rete and other encapsulating material layers about O in the present invention
2infiltrative contrast detects figure.
Figure orbicular spot represents filling rete of the present invention, and triangle represents other encapsulating material layers.
Embodiment
Below by embodiment, the present invention is further detailed explanation:
Reference numeral in Figure of description comprises: flexible base, board 10, OLED 11, inorganic protective layer 12, cofferdam rete 13, microballoon canopy 15, filling rete 14.
Embodiment one
The present embodiment is substantially as shown in Figure 1: the encapsulating structure of the present embodiment OLED, comprise: flexible substrates, OLED 11, inorganic protective layer 12, fill rete 14, microballoon canopy 15 and cofferdam rete 13, flexible substrates is used for support OLED 11, OLED 11 covers inorganic protective layer, cofferdam rete 13 closed pouch encloses the surrounding being placed in flexible substrates OLED 11 region, filling rete 14 is arranged between cofferdam rete 13 and inorganic protective layer 12 and is also covered in inorganic protective layer 12 completely, microballoon canopy 15 is arranged at fills on rete 14, and be closely connected with filling rete 14.
In the present embodiment, the width of cofferdam rete 13 is 0.5 ~ 1.5 ㎜, is highly 50 ~ 100 μm, and adopt photosensitive resin, viscosity is 550000 ~ 650000mPas.Fill rete 14 and adopt epoxy resin or polymer monomer, viscosity is 250 ~ 350mPas.Microballoon canopy 15 all adopts epoxide-resin glue or polymer monomer glue, and viscosity is 220000 ~ 320000mPas, and polymer monomer glue comprises acrylate monomer, fluorinated acrylate monomer, acrylamide monomer.Inorganic protective layer 12 is silica.The material of flexible base, board 10 can be polyimides, PETG, high-molecular polythene, olefin polymer etc.
Present invention also offers the method for packing of above-mentioned flexible OLED devices encapsulating structure, comprise the following steps:
By photoetching and lithographic method, OLED 11 region on flexible base, board 10 forms thin film transistor (TFT) array, thin film transistor (TFT) array is used for driving OLED device 11, the type of thin-film transistor is not restricted, it can be amorphous silicon film transistor, polycrystalline SiTFT, oxide thin film transistor or OTFT, making OLED 11 is the common practise of the art, due to the requirement not special to OLED 11, therefore the manufacture method of OLED 11 repeats no more, OLED 11 can be top luminescence or double-side, luminous color can be monochromatic, colored or white.
On flexible base, board 10, coated OLED 11 forms inorganic protective layer 12, specifically comprises: form inorganic protective layer 12 with chemical vapor deposition silica, or is that raw material adopts atom deposition method, magnetron sputtering method to form inorganic protective layer 12 with aluminium oxide.
On flexible base, board 10, the surrounding in corresponding OLED 11 region forms closed cofferdam rete 13, specifically comprises: form closed cofferdam rete 13 with silk-screen printing technique in the surrounding in OLED 11 region.In order to better prevent moisture from invading, in the present embodiment, the width of cofferdam rete 13 is 0.5 ~ 1.5 ㎜, is highly 50 ~ 100 μm.
Nearly oled layer is formed between cofferdam rete 13 and inorganic protective layer 12, specifically comprise: utilize some glue instrument, filling epoxy resin (also can be above-mentioned polymer monomer glue) between cofferdam rete 13 and inorganic protective layer 12, the doping particle of particle diameter between 12 ~ 34 nanometers is mixed with in epoxy resin, described doping particle is by aluminium oxide, silicon nitride and terbium sesquioxide mix by the mass ratio of 4:3:1.5, treat that epoxy resin flows freely in cofferdam, form uniform thin film layers, so with the profile scan one week of rear laser beam along thin layer, make epoxy resin melting, treat that namely its solidification forms nearly oled layer, and realize nearly oled layer and flexible base, board 10, the compact siro spinning technology of inorganic protective layer 12 and cofferdam rete 13,
Oled layer far away is formed between cofferdam rete 13 and inorganic protective layer 12, specifically comprise: utilize some glue instrument, filling epoxy resin (also can be above-mentioned polymer monomer glue) between cofferdam rete 13 and nearly oled layer, the doping particle of particle diameter between 570 ~ 1200 nanometers is mixed with in epoxy resin, described doping particle is by aluminium oxide, silicon nitride and terbium sesquioxide mix by the mass ratio of 5:2:2, treat that epoxy resin flows freely in the rete of cofferdam, form uniform thin film layers, so with the profile scan one week of rear laser beam along thin layer, make fast epoxy resin curing, namely oled layer far away is formed, and realize oled layer far away and nearly oled layer, the compact siro spinning technology of cofferdam rete 13,
Described doping particle is all consistent with the mass concentration in oled layer far away at nearly oled layer, and is all between 0.025wt% and 0.4wt%.The wavelength of described laser is in the scope of infrared light or ultraviolet light.
Filling the thin layer forming spherical crown shape on rete 14, i.e. microballoon canopy 15, specifically comprise: on filling rete 14, point glue equipment Stress control is used to drip the epoxide-resin glue of appropriate viscosity or acrylate monomer glue, form the thin layer of ball crown type, then by UV illumination or mode of heating solidification.
Embodiment two
The present embodiment belongs to two and compares example, filling rete of the present invention is made by the manufacture craft of embodiment one, be divided into nearly oled layer and oled layer far away, nearly oled layer and oled layer far away be all add in epoxy resin 0.32wt% doping particle and make, wherein in oled layer far away, the particle diameter of doping particle is between 570 ~ 1200 nanometers, and in nearly oled layer, the particle diameter of doping particle is between 12 ~ 34 nanometers.Doping particle in oled layer far away is mixed by aluminium oxide, silicon nitride and the terbium sesquioxide mass ratio by 5:2:2; Doping particle in nearly oled layer is mixed by aluminium oxide, silicon nitride and the terbium sesquioxide mass ratio by 4:3:1.5.The consistency of thickness (0.065mm) of oled layer far away and nearly oled layer, gross thickness is 0.155mm.
In order to form contrast effect, other encapsulating material layers described also adopt the manufacture craft of embodiment one to make, be divided into nearly oled layer and oled layer far away, nearly oled layer and oled layer far away be all add in epoxy resin 0.32wt% doping particle and make, wherein in oled layer far away, the particle diameter of doping particle is between 570 ~ 1200 nanometers, and in nearly oled layer, the particle diameter of doping particle is between 12 ~ 34 nanometers.Doping particle in oled layer far away is mixed by aluminium oxide, silica, zinc oxide and the terbium sesquioxide mass ratio by 1:1:1:4; Doping particle in nearly oled layer is mixed by aluminium oxide, silicon nitride and the terbium sesquioxide mass ratio by 1:1:1:2.The consistency of thickness (0.065mm) of oled layer far away and nearly oled layer, gross thickness is 0.155mm.
The present invention is filled rete and (gets 20cm
2) and other encapsulating material layers described (also get 20cm
2) carry out O
2permeability test.
Before not starting infiltration the present invention filled rete when being warmed to 80 DEG C with other encapsulating material layers, the present invention is filled rete and other encapsulating material layers described put into gas compartment respectively, with both mass spectrometer detections O
2infiltration situation.Being filled with total pressure to gas compartment is 4 × 10
4the O of Pa
2.
Mass spectrometer place O in process of osmosis
2pressure value change as shown in Figure 3, be filled with infiltration gas to gas compartment during t=0 in figure.Work as O
2infiltration is when reaching capacity, and the partial pressure of mass spectrometer place O2 is the partial pressure of 4.6 × 10-7Pa, CO2 is 2.9 × 10-6Pa.
Above-described is only embodiments of the invention, and in scheme, the general knowledge such as known concrete structure and characteristic does not do too much description at this.Should be understood that; for a person skilled in the art, under the prerequisite not departing from structure of the present invention, some distortion and improvement can also be made; these also should be considered as protection scope of the present invention, and these all can not affect effect of the invention process and practical applicability.The protection range that this application claims should be as the criterion with the content of its claim, and the embodiment in specification etc. record the content that may be used for explaining claim.
Claims (4)
- The encapsulating structure of 1.OLED device, it is characterized in that: comprise flexible base, board, be arranged at the OLED on flexible base, board, inorganic protective layer, cofferdam rete and fill rete, cofferdam rete ringwise, described OLED, inorganic protective layer and filling rete are all located in the rete of cofferdam, described inorganic protective layer is coated in described OLED with filling rete successively, and described cofferdam rete fits tightly all sides at described filling rete; Be mixed with doping particle in described inorganic protective layer, described doping particle is the mixture of aluminium oxide, silicon nitride and terbium sesquioxide.
- 2. the encapsulating structure of OLED according to claim 1, it is characterized in that: described filling rete is divided into nearly oled layer and oled layer far away, in nearly oled layer, the particle diameter of doping particle is between 12 ~ 34 nanometers, and in oled layer far away, the particle diameter of doping particle is between 570 ~ 1200 nanometers.
- 3. the encapsulating structure of OLED according to claim 2, is characterized in that: the width of described cofferdam rete is 0.5 ~ 1.5 ㎜, is highly 50 ~ 100 μm, and cofferdam rete adopts photosensitive resin, and viscosity is 550000 ~ 650000mPas.
- 4. the encapsulating structure of OLED according to claim 3, is characterized in that: the mass concentration of described doping particle in inorganic protective layer and filling rete is all between 0.001wt% and 0.5wt%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510914561.7A CN105576147A (en) | 2015-12-13 | 2015-12-13 | Packaging structure of OLED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510914561.7A CN105576147A (en) | 2015-12-13 | 2015-12-13 | Packaging structure of OLED device |
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| Publication Number | Publication Date |
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| CN105576147A true CN105576147A (en) | 2016-05-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510914561.7A Pending CN105576147A (en) | 2015-12-13 | 2015-12-13 | Packaging structure of OLED device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019127702A1 (en) * | 2017-12-29 | 2019-07-04 | 深圳市华星光电半导体显示技术有限公司 | Oled panel and manufacturing method therefor |
| US10431770B2 (en) | 2017-12-29 | 2019-10-01 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED panel with a ring shape resin encapsulation material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966788A (en) * | 2015-07-27 | 2015-10-07 | 京东方科技集团股份有限公司 | Packaging material, organic light-emitting diode device, and packaging method for organic light-emitting diode device |
| CN105098097A (en) * | 2015-09-11 | 2015-11-25 | 四川虹视显示技术有限公司 | Package structure and packaging method of flexible OLED (Organic Light Emitting Diode) device |
-
2015
- 2015-12-13 CN CN201510914561.7A patent/CN105576147A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104966788A (en) * | 2015-07-27 | 2015-10-07 | 京东方科技集团股份有限公司 | Packaging material, organic light-emitting diode device, and packaging method for organic light-emitting diode device |
| CN105098097A (en) * | 2015-09-11 | 2015-11-25 | 四川虹视显示技术有限公司 | Package structure and packaging method of flexible OLED (Organic Light Emitting Diode) device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019127702A1 (en) * | 2017-12-29 | 2019-07-04 | 深圳市华星光电半导体显示技术有限公司 | Oled panel and manufacturing method therefor |
| US10431770B2 (en) | 2017-12-29 | 2019-10-01 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | OLED panel with a ring shape resin encapsulation material |
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Application publication date: 20160511 |