CN105572559B - A kind of power MOSFET package thermal resistance comparison means - Google Patents
A kind of power MOSFET package thermal resistance comparison means Download PDFInfo
- Publication number
- CN105572559B CN105572559B CN201610132622.9A CN201610132622A CN105572559B CN 105572559 B CN105572559 B CN 105572559B CN 201610132622 A CN201610132622 A CN 201610132622A CN 105572559 B CN105572559 B CN 105572559B
- Authority
- CN
- China
- Prior art keywords
- constant control
- current constant
- pin
- control chip
- connect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Amplifiers (AREA)
Abstract
The present invention provides a kind of power MOSFET package thermal resistance comparison means, and including adjustable DC power supply, Switching Power Supply, current constant control plate, two-way point thermometer, power MOSFET and radiator, wherein power MOSFET is crimped on a heat sink；Current constant control plate accurately controls different power MOSFET to be operated in amplification region and ensures identical power dissipation, and power MOSFET surfaces and the temperature on the radiator of its underpart are measured by two-way point thermometer.The present invention makes the electric current for flowing through power MOSFET precisely controlled, significantly reduces the current difference caused by cut-in voltage difference existing for different capacity MOSFET by the control action of current constant control plate.Meanwhile under identical power dissipation conditions, power MOSFET surfaces and the temperature on the radiator of its underpart are measured by two-way point thermometer, it can size that is relatively quick and accurately comparing different capacity mosfet package thermal resistance.
Description
Technical field
The present invention relates to semiconductor test technical fields, and in particular to a kind of power MOSFET package thermal resistance comparison means.
Background technology
For power MOSFET, performance is not only related with chip electrical parameter, but also the modeling selected in encapsulation process
Seal material, frame, solder (or bonding die glue), lead and production technology etc. also can generate strong influence to its performance.Wherein also have
One parameter being affected to its performance is packaging thermal resistance, and the size of packaging thermal resistance shows its energy to external diffusion heat amount
Power has played the reliability of product very crucial.Therefore in practical production and in use, being frequently necessary to power
The packaging thermal resistance of MOSFET is simply compared or is measured, to determine the quality of its performance.
At present, the packaging thermal resistance of power MOSFET is generally measured using thermal resistance tester, although can directly measure
Packaging thermal resistance, but its structure is complex, price is very high, and many enterprises and individuals can not bear, it is impossible in practical production and make
It is widely used in.
Therefore, there is another more simple and efficient mode in the prior art, i.e., by direct in the operating condition
The temperature for measuring power MOSFET rises to compare encapsulation internal resistance.But this mode is unscientific, because for different power
For MOSFET, dynamic and static parameter have differences, even under identical operating condition, device also can not in itself
Can have identical power dissipation, so the temperature measured rises can not reflect the size of packaging thermal resistance completely, comparing result precision compared with
It is low.
Invention content
The present invention provides a kind of power MOSFET package thermal resistance comparison means, is made with solving measuring device of the prior art
With of high cost and comparing result precision it is relatively low the problem of.
The present invention provides a kind of power MOSFET package thermal resistance comparison means, including adjustable DC power supply, Switching Power Supply, perseverance
Flow control making sheet, two-way point thermometer, power MOSFET and radiator, wherein the power MOSFET is crimped on the radiator；
The output cathode of the adjustable DC power supply is connect with the drain electrode of the power MOSFET, output negative pole and the current constant control plate
Power cathode connection；The positive grade of output of the Switching Power Supply is connect with the positive pole of the current constant control plate, output negative pole
It is connect with the power cathode of the current constant control plate；The driving end of the current constant control plate and reflux end respectively with the power
The grid of MOSFET is connected with source electrode, and the two-way probe of the two-way point thermometer measures the surface temperature of the power MOSFET respectively
The temperature being located on degree and the radiator at the power MOSFET bottoms.
As the preferred embodiment of the present invention, the current constant control plate is equipped with current constant control chip, the current constant control core
Piece has eight pins, and the first operational amplifier, second operational amplifier and voltage base are additionally provided on the current constant control chip
It is accurate.
As the preferred embodiment of the present invention, the output terminal pin of first operational amplifier and the current constant control chip
The connection of the first pin, negative input pin connect with the second pin of the current constant control chip, electrode input end pin
Connect respectively with the third pin of the current constant control chip and the voltage reference, the other end of the voltage reference with it is described
The 4th pin connection of current constant control chip；The output terminal pin of the second operational amplifier and the current constant control chip
7th pin connects, and negative input pin connect with the 6th pin of the current constant control chip, electrode input end pin and
The 5th pin connection of the current constant control chip.
As the preferred embodiment of the present invention, four divider resistances, a current sample are additionally provided on the current constant control plate
Resistance and three filter capacitors；The 8th pin and the 4th pin of the current constant control chip divide after the filtering of third filter capacitor
It is not connect with the positive pole of the current constant control plate and power cathode；First pin of the current constant control chip and second draws
Foot is connect respectively with the first divider resistance, the other end of first divider resistance respectively with the second divider resistance and the constant current
The 5th pin connection of chip is controlled, the other end of second divider resistance and the 4th pin of the current constant control chip connect
It connects；One end of first filter capacitor is connect with the 5th pin of the current constant control chip, the other end and the constant current control
The 4th pin connection of coremaking piece；One end of current sampling resistor is connect, while also pass through with the reflux end of the current constant control plate
4th divider resistance is connect with the 6th pin of the current constant control chip；One end of third divider resistance and the current constant control
The 7th pin connection of chip, the other end are connect respectively with the driving end of the current constant control plate and the second filter capacitor；It is described
The other end of first filter capacitor, the current sampling resistor and second filter capacitor also with the current constant control plate
Power cathode connection.
As the preferred embodiment of the present invention, further include alternating current input power supplying, the alternating current input power supplying respectively with it is described can
Tuning DC power supply is connected with the Switching Power Supply.
As the preferred embodiment of the present invention, the output voltage of the Switching Power Supply is 15V.
A kind of power MOSFET package thermal resistance comparison means provided by the invention, by the control action of current constant control plate,
Make the electric current for flowing through power MOSFET precisely controlled, significantly reduce due to cut-in voltage existing for different capacity MOSFET
Current difference caused by difference.In addition, since the voltage in the drain electrode and source electrode of power MOSFET is equal to adjustable DC power supply
Voltage or sampling resistor RS on voltage, so constant electric current and determining voltage ensure that in test different capacity
During MOSFET, the power to dissipate is the same；Therefore under identical power dissipation conditions, work(is measured by two-way point thermometer
Rate MOSFET surfaces and the temperature on the radiator of its underpart, can be relatively quick and accurately compare different capacity
The size of mosfet package thermal resistance, in practical production and using very useful.
Description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is only some embodiments of the present invention, for
For those of ordinary skill in the art, without creative efforts, other are can also be obtained according to these attached drawings
Attached drawing.
Fig. 1 is the circuit diagram of power MOSFET package thermal resistance comparison means provided in an embodiment of the present invention；
Fig. 2 is that the circuit of current constant control plate in power MOSFET package thermal resistance comparison means provided in an embodiment of the present invention is former
Reason figure.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention discloses a kind of power MOSFET package thermal resistance comparison means, in the encapsulation to power MOSFET
It is more practical than the aforementioned two ways provided in the prior art when thermal resistance is carried out simply relatively to determine the quality of its performance, and
And the installation cost is relatively low, comparison precision is higher, it is very useful in practical production and use.
With reference to shown in Fig. 1, a kind of power MOSFET package thermal resistance comparison means provided in an embodiment of the present invention, including exchange
Input power, adjustable DC power supply, Switching Power Supply, current constant control plate, two-way point thermometer, power MOSFET and radiator, wherein
Power MOSFET is crimped on a heat sink.Alternating current input power supplying is powered to adjustable DC power supply and Switching Power Supply, straight-adjustable galvanic electricity
The output in source provides the dissipated power of power MOSFET, and Switching Power Supply is powered for current constant control plate.Current constant control plate accurately controls
Different power MOSFET is operated in amplification region and ensures identical power dissipation, and power MOSFET is measured by two-way point thermometer
Surface and the temperature on the radiator of its underpart.According to the more of the different capacity MOSFET surface temperature differences to be compared
It is few, it can accurately find out the difference size of difference power MOSFET package thermal resistance to be measured to be compared.Wherein, exchange input electricity
Source is 220V AC powers, and the output voltage of Switching Power Supply is 15V.
Alternating current input power supplying is connect respectively with adjustable DC power supply and Switching Power Supply, you can each input of tuning DC power supply
Hold each input terminal (L, N, PE) of (L, N, PE) and Switching Power Supply respectively with each output terminal of alternating current input power supplying (L, N,
PE it) is connected respectively.The output cathode of adjustable DC power supply is connect with the drain electrode of power MOSFET, output negative pole with it is described
The power cathode connection of current constant control plate.The positive grade of output of Switching Power Supply is connect with the positive pole of current constant control plate, is exported
Cathode is connect with the power cathode of current constant control plate.The driving end of current constant control plate and the end grid with power MOSFET respectively that flow back
Pole is connected with source electrode, the surface temperature of the probe measurement power MOSFET at the mouth A of two-way point thermometer, the mouth B of two-way point thermometer
It is located at the temperature of power MOSFET lower positions on the probe measurement radiator at place.
With further reference to shown in Fig. 2, current constant control plate is equipped with current constant control chip IC 1, which has
There are eight pins, the first operational amplifier A P1, second operational amplifier AP2 and voltage base are additionally provided in current constant control chip IC 1
Quasi- D ＇.Wherein, the output terminal pin of the first operational amplifier A P1 is connect with the first pin of current constant control chip IC 1, and cathode is defeated
The second pin for entering end pipe foot with current constant control chip IC 1 is connect, electrode input end pin respectively with current constant control chip IC 1
Third pin is connected with voltage reference D ＇, and the other end of voltage reference D ＇ is connect with the 4th pin of current constant control chip IC 1.The
The output terminal pin of two operational amplifier A P2 is connect with the 7th pin of current constant control chip IC 1, negative input pin and perseverance
The 6th pin connection of flow control chip IC 1, electrode input end pin are connect with the 5th pin of current constant control chip IC 1.
Four divider resistances, a current sampling resistor and three filter capacitors are additionally provided on current constant control plate.Wherein, it is permanent
The 8th pin and the 4th pin of flow control chip IC 1 through third filter capacitor C3 filtering after, respectively with the electricity of current constant control plate
Source anode is connected with power cathode, and third filter capacitor C3 can play the role of power supply decoupling.The first of current constant control chip IC 1
Pin and second pin are connect respectively with the first divider resistance R1, and the other end of the first divider resistance R1 is electric with the second partial pressure respectively
Resistance R2 is connected with the 5th pin of current constant control chip IC 1, the other end and the current constant control chip IC 1 of the second divider resistance R2
4th pin connects.One end of first filter capacitor C1 is connect with the 5th pin of current constant control chip IC 1, the other end and constant current
Control the 4th pin connection of chip IC 1.One end of current sampling resistor RS is connect with the reflux end of current constant control plate, simultaneously also
It is connect through the 4th divider resistance R4 with the 6th pin of current constant control chip IC 1.One end of third divider resistance R3 and constant current control
The 7th pin connection of coremaking piece IC1, the other end are connect respectively with the driving end of current constant control plate and the second filter capacitor C2.The
Power supply of the other end of one filter capacitor C1, current sampling resistor RS and the second filter capacitor C2 also with current constant control plate is born
Pole connects.
In above-mentioned current constant control plate, the first operational amplifier A P1 in current constant control chip IC 1 forms voltage follow
Device, second operational amplifier AP2 form voltage comparator.Current constant control plate passes through by the partial pressure electricity of the first divider resistance R1 and second
R2 preset relatively threshold values, i.e. level value are hindered, so as to the dissipated power of accurate power control MOSFET, second transports in control loop
Calculate amplifier AP2, power MOSFET, sampling resistor RS composition negative feedback loops.
A kind of power MOSFET package thermal resistance comparison means provided in an embodiment of the present invention, specific working mode are：It connects
After logical alternating current input power supplying, Switching Power Supply is powered to current constant control plate, and the current constant control chip IC 1 on current constant control plate starts work
Make, the internal voltage reference D ＇ of current constant control chip IC 1 generate the reference voltage of 2.5V.The reference voltage is put by the first operation
Big device AP1 carries out voltage follow, then the first pin output through current constant control chip IC 1, then through the first divider resistance R1 and
The 5th pin of current constant control chip IC 1 is input to after second divider resistance R2 partial pressures, the first filter capacitor C1 filtering as the
Threshold level is compared in the input of two operational amplifier A P2.The another way input signal of second operational amplifier AP2 is from adjustable
Drain D of the output cathode of DC power supply through power MOSFET flows to its source S, then arrives the reflux end of current constant control plate again,
The further voltage after current sampling resistor RS current samples.
In the case that the electric current for flowing through power MOSFET is smaller, the voltage on current sampling resistor RS is not up to constant current
Control the comparison threshold level of the 5th pin of chip IC 1, second operational amplifier AP2 output HIGH voltages to current constant control chip
The 7th pin of IC1 is output to the driving end of current constant control plate, then the grid G to power MOSFET through third divider resistance R3.
At this moment power MOSFET can be intended to opening state, then flow through the electric current of power MOSFET and can increase, on current sampling resistor RS
Pressure drop also can be with increase, when this pressure drop is increased above the comparison threshold level of the 5th pin of current constant control chip IC 1
When, second operational amplifier AP2 exports low-voltage to the 7th pin of current constant control chip IC 1, defeated through third divider resistance R3
The grid G of power MOSFET is arrived at the driving end gone out to current constant control plate again.At this moment power MOSFET can be intended to closed state, then
Flowing through the electric current of power MOSFET can reduce, and pressure drop also can be with reduction on current sampling resistor RS.
Material is thus formed a negative feedback control loops, most flow through the electric current of current sampling resistor RS at last, that is,
The current control stabilization of power MOSFET is flowed through on a limit value, this current value is equal to the of current constant control chip IC 1
The comparison threshold level of five pins divided by the resistance value of current sampling resistor RS.The dissipated power stabilization of power MOSFET is at this
On electric current and the product of voltage drop, heat is spread outward through radiator.Through reaching thermal balance after a period of time, in this process
Can power MOSFET lower positions be located on the surface temperature of recording power MOSFET and radiator at regular intervals
Temperature.After being measured, another power MOSFET to be compared is measured again, and record temperature with same method.Two
Power MOSFET compares the temperature of record after being measured.Since the present apparatus can accurately control different capacity MOSFET
Dissipated power reach consistent, so surface temperature is big compared with the packaging thermal resistance of high power MOSFET, the corresponding capacity of heat transmission
Difference.In addition, according to the number of temperature difference, those skilled in the art can accurately compare the encapsulation of two power MOSFET
The difference size of thermal resistance.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (6)
1. a kind of power MOSFET package thermal resistance comparison means, which is characterized in that including adjustable DC power supply, Switching Power Supply, perseverance
Flow control making sheet, two-way point thermometer, power MOSFET and radiator, wherein the power MOSFET is crimped on the radiator；
The output cathode of the adjustable DC power supply is connect with the drain electrode of the power MOSFET, output negative pole and the current constant control plate
Power cathode connection；The positive grade of output of the Switching Power Supply is connect with the positive pole of the current constant control plate, output negative pole
It is connect with the power cathode of the current constant control plate；The driving end of the current constant control plate and reflux end respectively with the power
The grid of MOSFET is connected with source electrode, and the two-way probe of the two-way point thermometer measures the surface temperature of the power MOSFET respectively
It is located at the temperature of the power MOSFET lower positions on degree and the radiator.
2. the apparatus according to claim 1, which is characterized in that the current constant control plate is equipped with current constant control chip, institute
Stating current constant control chip has eight pins, is additionally provided with the first operational amplifier on the current constant control chip, the second operation is put
Big device and voltage reference.
3. the apparatus of claim 2, which is characterized in that the output terminal pin of first operational amplifier with it is described
The first pin connection of current constant control chip, negative input pin are connect with the second pin of the current constant control chip, just
Pole input terminal pin is connect respectively with the third pin of the current constant control chip and the voltage reference, the voltage reference
The other end is connect with the 4th pin of the current constant control chip；The output terminal pin of the second operational amplifier and the perseverance
The 7th pin connection of flow control chip, negative input pin are connect with the 6th pin of the current constant control chip, anode
Input terminal pin is connect with the 5th pin of the current constant control chip.
4. the apparatus of claim 2, which is characterized in that be additionally provided on the current constant control plate four divider resistances,
One current sampling resistor and three filter capacitors；The 8th pin and the 4th pin of the current constant control chip are filtered through third
It is connect respectively with the positive pole of the current constant control plate and power cathode after capacitor filtering；The first of the current constant control chip
The one end of pin and second pin respectively with the first divider resistance is connect, and the other end of first divider resistance is respectively with second
Divider resistance is connected with the 5th pin of the current constant control chip, the other end of second divider resistance and the constant current control
The 4th pin connection of coremaking piece；One end of first filter capacitor is connect with the 5th pin of the current constant control chip, another
End is connect with the 4th pin of the current constant control chip；One end of current sampling resistor and the reflux end of the current constant control plate
Connection, while also connect through the 4th divider resistance with the 6th pin of the current constant control chip；One end of third divider resistance
It is connect with the 7th pin of the current constant control chip, the other end filters respectively with the driving end of the current constant control plate and second
Capacitance connection；The other end of first filter capacitor, the current sampling resistor and second filter capacitor also with
The power cathode connection of the current constant control plate.
5. device according to any one of claim 1 to 4, which is characterized in that further include alternating current input power supplying, the friendship
Stream input power is connect respectively with the adjustable DC power supply and the Switching Power Supply.
6. device according to any one of claim 1 to 4, which is characterized in that the output voltage of the Switching Power Supply is
15V。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610132622.9A CN105572559B (en) | 2016-03-09 | 2016-03-09 | A kind of power MOSFET package thermal resistance comparison means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610132622.9A CN105572559B (en) | 2016-03-09 | 2016-03-09 | A kind of power MOSFET package thermal resistance comparison means |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105572559A CN105572559A (en) | 2016-05-11 |
| CN105572559B true CN105572559B (en) | 2018-06-12 |
Family
ID=55882915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610132622.9A Active CN105572559B (en) | 2016-03-09 | 2016-03-09 | A kind of power MOSFET package thermal resistance comparison means |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105572559B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110244211B (en) * | 2019-07-12 | 2024-04-30 | 北京华峰测控技术股份有限公司 | Transient thermal resistance test circuit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0735813A (en) * | 1993-07-22 | 1995-02-07 | Omron Corp | Heat resistance measuring apparatus |
| JPH11211786A (en) * | 1998-01-29 | 1999-08-06 | Sony Tektronix Corp | Thermal resistance measuring method |
| CN201773168U (en) * | 2010-09-08 | 2011-03-23 | 中国电子科技集团公司第十三研究所 | Thermal resistance tester of semiconductor power device |
| CN102116829B (en) * | 2010-12-21 | 2013-02-06 | 杭州远方光电信息股份有限公司 | Method and device for measuring thermal resistance of diode |
| CN103048606B (en) * | 2012-12-30 | 2015-03-18 | 杭州士兰微电子股份有限公司 | Thermal resistance test device and method of semiconductor power device |
| CN205484685U (en) * | 2016-03-09 | 2016-08-17 | 西安后羿半导体科技有限公司 | Power MOSFET encapsulation thermal resistance comparer |
-
2016
- 2016-03-09 CN CN201610132622.9A patent/CN105572559B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN105572559A (en) | 2016-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107192934B (en) | Method for measuring incrustation transient thermal impedance of high-power IGBT | |
| CN105021967B (en) | The precise measurement of voltage drop across thyristor | |
| CN105794094B (en) | Semiconductor device | |
| CN106199367A (en) | A kind of IGBT junction temperature measurement device | |
| CN205353210U (en) | It is applicable in internal resistance of cell on -line monitoring device of multiple battery type | |
| CN110824321B (en) | Stray capacitance obtaining method for IGBT dynamic parameter test platform | |
| CN102759544B (en) | Method for testing thermal resistance of high-power silicon carbide diode | |
| CN205679732U (en) | A kind of great current impact test device | |
| CN105572559B (en) | A kind of power MOSFET package thermal resistance comparison means | |
| CN205484685U (en) | Power MOSFET encapsulation thermal resistance comparer | |
| CN113219315A (en) | Inverter IGBT aging on-line monitoring method and system based on junction temperature normalization | |
| CN107957541B (en) | A kind of power semiconductor modular internal parallel cDNA microarray method and system | |
| CN111337812A (en) | MOSFET wafer proximity particle testing method and circuit | |
| CN204228101U (en) | Two parallel probe formula rain water depth on road surface tester | |
| CN203690888U (en) | Electric leakage protection plug | |
| CN104615060A (en) | Switching quantity acquisition circuit and method both used for direct sampling and direct tripping | |
| CN207380122U (en) | MOSFET hourglass source electrode resistance test circuits | |
| CN107167666B (en) | Power device loss test method | |
| CN109374978A (en) | A kind of cable dielectric loss improvement measuring circuit and method based on bridge method | |
| CN104410374A (en) | Precise alternating voltage amplifier | |
| CN204131469U (en) | For calibrating the accurate alternating voltage amplifier of lightning arrester block property current tester | |
| CN114740323A (en) | GaN device junction temperature and thermal resistance monitoring circuit and method | |
| CN204862725U (en) | Water dispenser automatic control switch | |
| CN209419944U (en) | It is a kind of to determine power LED driver | |
| CN205665370U (en) | Hand -held type self -adaptation high voltage power MOSFET parameter measuring instrument |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180205 Address after: Caotan economic and Technological Development Zone, eco industrial park in Shaanxi city of Xi'an province is 710000 Jilu No. 8928 Applicant after: Xi'an Hua Yi Electronic Limited by Share Ltd Address before: Yanta District 710054 Shaanxi city of Xi'an province Yong song Road No. 18 Qiutao Pavilion 1 room 40501 Applicant before: XI'AN HOOYI SEMICONDUCTOR TECHNOLOGY CO., LTD. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 710000 No. 8928, Shang Ji Road, an ecological industrial park in Xi'an, Shaanxi economic and Technological Development Zone Patentee after: Huayi Microelectronics Co., Ltd. Address before: 710000 No. 8928, Shang Ji Road, an ecological industrial park in Xi'an, Shaanxi economic and Technological Development Zone Patentee before: Xi'an Hua Yi Electronic Limited by Share Ltd |