CN105553437B - Graph optimization method after a kind of SAW filter chip stripping technology - Google Patents
Graph optimization method after a kind of SAW filter chip stripping technology Download PDFInfo
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- CN105553437B CN105553437B CN201510876648.XA CN201510876648A CN105553437B CN 105553437 B CN105553437 B CN 105553437B CN 201510876648 A CN201510876648 A CN 201510876648A CN 105553437 B CN105553437 B CN 105553437B
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- corrosive liquid
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- saw filter
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H2003/0071—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of bulk acoustic wave and surface acoustic wave elements in the same process
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses graph optimization method after a kind of SAW filter chip stripping technology, it is concretely comprised the following steps：Crystal column surface is uniformly distributed corrosive liquid, corrosive liquid corrodes the wafer figure after stripping, keep corrosive liquid constant at 23 DEG C ± 1 DEG C, setting clamp rotating speed is 1500 revs/min ± 50 revs/min, using fixture rotate caused by centrifugal force, so that corrosive liquid or deionized water play souring to chip surface, etching time scope is set as 60s 90s, corrosive liquid cleans chip, when counting full etching time, close corrosive liquid and open deionized water and chip is cleaned, cleaned and dried after corrosion, complete the graphics-optimized after SAW filter chip stripping technology.The present invention can improve the centre frequency of SAW filter chip；Reversely made up to line width is uneven caused by during photoetching development；Lift SAW filter product reliability.
Description
Technical field
The present invention relates to the graphics chip optimization method after a kind of lithography stripping, particularly a kind of SAW filter core
Graph optimization method after piece stripping technology.
Background technology
SAW filter is a kind of in piezoelectricity crystal column surface making metal interdigital electrode, by being powered up to electrode, profit
The function to Electric signal processing is realized with electro-acoustic-electricity conversion of SAW filter chip.In SAW filter chip
In manufacturing process, graphics chip making often is carried out using lithography stripping technique, technological process includes：Photoetching offset plate figure system
Make, and in the enterprising row metal thin-film deposition of photoetching offset plate figure, combine ultrasonic oscillation finally by stripper immersion and peel off and complete
Graphics chip makes, and the unit for electrical property parameters that graphics chip Forming Quality height directly affects SAW filter is good and bad.Tradition
SAW filter production technology in, inevitably there is hair in metallic pattern and inter-digital electrode edges that lithography stripping goes out
The defects of thorn or protrusion, these defects can influence the crucial electrical property such as insertion loss of device；Due to using ultrasonic wave when peeling off
Concussion so that chip surface remains substantial amounts of tiny aluminium skimmings, these aluminium skimmings are difficult to be removed with the method for traditional bath, and
Being possible to be transferred to during the use or concussion of subsequent product between electrode causes shorted devices to fail；Traditional sound surface
In wave filter egative forme positive photoresist photoetching process, frequently with wafer after rotation exposure and in the development side of crystal circle center's instillation developer solution
Formula is developed, and which inevitably causes the graphics chip contact developer solution of crystal circle center relatively more, and wafer side
The graphics chip development amount of edge is less, ultimately results in wafer, thicker by the universal figure line width of paracentral chip, close
The chip line width at edge is thinner, and chip uniformity is poor in piece；Finally, SAW filter belongs to the making of single layer of semiconductor technique
Frequency device, the centre frequency of device is directly related with graphics chip line width, and in general, the centre frequency of device is higher,
Need the line width that makes thinner, but with the increase of filter frequencies, when the characteristic line breadth in required chip reaches existing photoetching
Machine resolution pole is prescribed a time limit, and only can not produce the wide high-frequency sound surface wave filter chip of more filament by photoetching process.
The content of the invention
Present invention aims at graph optimization method after a kind of SAW filter chip stripping technology of offer, core is solved
Piece figure peels off back edge burr, surface metal chip stains, chip line width lack of homogeneity, making extra fine wire are wide in piece after development
The problem of less than litho machine resolution ratio.
Graph optimization method after a kind of SAW filter chip stripping technology, it is concretely comprised the following steps：
First step crystal column surface is uniformly distributed corrosive liquid
After SAW filter chip stripping technology is completed and forms graphics chip, wafer is fixed on rolling clamp
On, corrosion fluid column is instiled in rotating crystal circle center, corrosive liquid is uniformly distributed on the wafer surface using rotary centrifugal force.
Second step corrosive liquid corrodes the wafer figure after stripping
Corrosive liquid uses equivalent concentration as 2.38% tetramethylammonium hydroxide, the graphics chip generation of corrosive liquid and aluminum
Reaction：2Al+2OH-+2H2O→2AlO2-+3H2↑.Figure and lines after the wet etching mode of this isotropic will be peeled off
The burr at edge, protrusion and residual aluminium skimmings erosion removal in the lump.Corrosive liquid is on aluminum SAW filter chip at the same time
Interdigital transducer produces corrosiveness on lateral, is in the vertical thinned chip aluminium film thickness, while make in the horizontal interdigital
Transducer attenuates, and obtains breaking through the fine interdigital transducer figure of litho machine nominal resolution.
3rd step keeps corrosive liquid constant temperature
Corrosive liquid reacts with chip metal figure, and the reaction speed of the two is directly proportional to corrosive liquid temperature, corrosive liquid
Temperature is higher, and the reaction speed of corrosive liquid and chip metal figure is faster.Corrosive liquid constant temperature is at 23 DEG C ± 1 DEG C, using journey
The mode of water bath heating transfusion pipe is controlled, ensures that corrosion rate is slowly controllable.
4th step sets rolling clamp rotating speed
Setting clamp rotating speed be 1500 revs/min ± 50 revs/min, using fixture rotate caused by centrifugal force so that
Corrosive liquid or deionized water play chip surface souring, while ensure that corrosion process is slowly controllable.Stripping technology is surpassed
Aluminium skimmings that acoustic shock produces after swinging and the product produced after corrosion wash away away from chip surface, reach the effect of graphics chip optimization
Fruit.
5th step sets etching time according to corrosion rate and graphics-optimized effect
Etching time scope is set as 60s-90s, starts timing while corrosive liquid contact chip, corrosive liquid is to chip
Cleaned, when counting full etching time, close corrosive liquid and open deionized water and chip is cleaned.
6th step is cleaned and dried after corroding
After corrosion process, corrosive liquid woven hose is removed, keeps wafer with 1500 revs/min of ± 50 revs/min of rotating speeds
Rotation, is instiled in crystal circle center with deionized water, deionized water is uniformly distributed in crystal column surface using rotary centrifugal force, by crystalline substance
The remaining corrosive liquid of circular surfaces cleans up, and sets scavenging period as 30s.Set after cleaning drying rotating speed as 3000 turns/
± 50 revs/min of minute, is dried the deionized water of crystal column surface using rotary centrifugal force, the drying time is set as 30s.Drying
Rear jig stops rotating, and removes wafer, completes the graphics-optimized after SAW filter chip stripping technology.
The present invention is using the wet etching mode of isotropic by the burr of figure after stripping and line edge, protrusion and residual
Aluminium skimmings erosion removal in the lump is stayed, reaches optimization figure, clean the effect of chip surface；Due to the effect of rotary centrifugal force, wafer
The extent of corrosion that the chip of core is subject to is big compared to the chip at new crystal round fringes, in other words, development rear center's line width compared with
The thick graphics chip amount of being corroded is big, and development back edge line width is small compared with thin graphics chip etching extent therefore anti-by the line width
To optimization process is made up, crystal circle center's segment chip line width and edge chip line width gap can be reduced, so as to increase crystalline substance
Chip uniformity between circle, peeling off molding metal wire can attenuate because of being corroded, so as to obtain the resolution of breakthrough litho machine
The wide interdigital electrode of filament of rate, improves the centre frequency of made SAW filter；In addition assay optimization control is passed through
Forms of corrosion processed, corrosive liquid concentration, corrosive liquid temperature, etching time ensure corrosive effect, optimize SAW filter
Figure after chip stripping technology.
Embodiment
Graph optimization method after a kind of SAW filter chip stripping technology, it is concretely comprised the following steps：
First step crystal column surface is uniformly distributed corrosive liquid
After SAW filter chip stripping technology is completed and forms graphics chip, wafer is fixed on rolling clamp
On, corrosion fluid column is instiled in rotating crystal circle center, corrosive liquid is uniformly distributed on the wafer surface using rotary centrifugal force.
Second step corrosive liquid corrodes the wafer figure after stripping
Corrosive liquid uses equivalent concentration as 2.38% tetramethylammonium hydroxide, the graphics chip generation of corrosive liquid and aluminum
Reaction：2Al+2OH-+2H2O→2AlO2-+3H2↑.Figure and lines after the wet etching mode of this isotropic will be peeled off
The burr at edge, protrusion and residual aluminium skimmings erosion removal in the lump.Corrosive liquid is on aluminum SAW filter chip at the same time
Interdigital transducer produces corrosiveness on lateral, is in the vertical thinned chip aluminium film thickness, while make in the horizontal interdigital
Transducer attenuates, and obtains breaking through the fine interdigital transducer figure of litho machine nominal resolution.
3rd step keeps corrosive liquid constant temperature
Corrosive liquid reacts with chip metal figure, and the reaction speed of the two is directly proportional to corrosive liquid temperature, corrosive liquid
Temperature is higher, and the reaction speed of corrosive liquid and chip metal figure is faster.Corrosive liquid constant temperature is at 23 DEG C ± 1 DEG C, using journey
The mode of water bath heating transfusion pipe is controlled, ensures that corrosion rate is slowly controllable.
4th step sets rolling clamp rotating speed
Setting clamp rotating speed be 1500 revs/min ± 50 revs/min, using fixture rotate caused by centrifugal force so that
Corrosive liquid or deionized water play chip surface souring, while ensure that corrosion process is slowly controllable.Stripping technology is surpassed
Aluminium skimmings that acoustic shock produces after swinging and the product produced after corrosion wash away away from chip surface, reach the effect of graphics chip optimization
Fruit.
5th step sets etching time according to corrosion rate and graphics-optimized effect
Etching time scope is set as 60s-90s, starts timing while corrosive liquid contact chip, corrosive liquid is to chip
Cleaned, when counting full etching time, close corrosive liquid and open deionized water and chip is cleaned.
6th step is cleaned and dried after corroding
After corrosion process, corrosive liquid woven hose is removed, keeps wafer with 1500 revs/min of ± 50 revs/min of rotating speeds
Rotation, is instiled in crystal circle center with deionized water, deionized water is uniformly distributed in crystal column surface using rotary centrifugal force, by crystalline substance
The remaining corrosive liquid of circular surfaces cleans up, and sets scavenging period as 30s.Set after cleaning drying rotating speed as 3000 turns/
± 50 revs/min of minute, is dried the deionized water of crystal column surface using rotary centrifugal force, the drying time is set as 30s.Drying
Rear jig stops rotating, and removes wafer, completes the graphics-optimized after SAW filter chip stripping technology.
Claims (1)
1. graph optimization method after a kind of SAW filter chip stripping technology, it is characterised in that concretely comprise the following steps：
First step crystal column surface is uniformly distributed corrosive liquid
After SAW filter chip stripping technology is completed and forms graphics chip, wafer is fixed on rolling clamp, is made
Corrode fluid column to instil in rotating crystal circle center, corrosive liquid is uniformly distributed on the wafer surface using rotary centrifugal force；
Second step corrosive liquid corrodes the wafer figure after stripping
Corrosive liquid uses equivalent concentration, and for 2.38% tetramethylammonium hydroxide, the graphics chip generation of corrosive liquid and aluminum is instead
Should：2Al+2OH-+2H2O→2AlO2-+3H2↑；Figure and lines side after the wet etching mode of this isotropic will be peeled off
The burr of edge, protrusion and residual aluminium skimmings erosion removal in the lump；Corrosive liquid is to the fork on aluminum SAW filter chip at the same time
Finger transducer produces corrosiveness on lateral, is in the vertical thinned chip aluminium film thickness, while make interdigital change in the horizontal
Energy device attenuates, and obtains breaking through the fine interdigital transducer figure of litho machine nominal resolution；
3rd step keeps corrosive liquid constant temperature
Corrosive liquid reacts with chip metal figure, and the reaction speed of the two is directly proportional to corrosive liquid temperature, corrosive liquid temperature
Higher, the reaction speed of corrosive liquid and chip metal figure is faster；Corrosive liquid constant temperature is at 23 DEG C ± 1 DEG C, using program-controlled water
The mode of bath heating transfusion pipe, ensures that corrosion rate is slowly controllable；
4th step sets rolling clamp rotating speed
Setting clamp rotating speed be 1500 revs/min ± 50 revs/min, using fixture rotate caused by centrifugal force so that corrosion
Liquid or deionized water play chip surface souring, while ensure that corrosion process is slowly controllable；Stripping technology ultrasound is shaken
The aluminium skimmings produced after swinging and the product produced after corrosion wash away away from chip surface, reach the effect of graphics chip optimization；
5th step sets etching time according to corrosion rate and graphics-optimized effect
Etching time scope is set as 60s-90s, starts timing while corrosive liquid contact chip, corrosive liquid carries out chip
Cleaning, when counting full etching time, closes corrosive liquid and opens deionized water and chip is cleaned；
6th step is cleaned and dried after corroding
After corrosion process, corrosive liquid woven hose is removed, keeps wafer to be rotated with 1500 revs/min of ± 50 revs/min of rotating speeds,
Instiled with deionized water in crystal circle center, deionized water is uniformly distributed in crystal column surface using rotary centrifugal force, by wafer table
The remaining corrosive liquid in face cleans up, and sets scavenging period as 30s；Drying rotating speed is set after cleaning as 3000 revs/min
± 50 revs/min, the deionized water of crystal column surface is dried using rotary centrifugal force, the drying time is set as 30s；Pressed from both sides after drying
Tool stops rotating, and removes wafer, completes the graphics-optimized after SAW filter chip stripping technology.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510876648.XA CN105553437B (en) | 2015-12-03 | 2015-12-03 | Graph optimization method after a kind of SAW filter chip stripping technology |
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| CN201510876648.XA CN105553437B (en) | 2015-12-03 | 2015-12-03 | Graph optimization method after a kind of SAW filter chip stripping technology |
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| CN105553437A CN105553437A (en) | 2016-05-04 |
| CN105553437B true CN105553437B (en) | 2018-04-13 |
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| CN115505930A (en) * | 2022-09-30 | 2022-12-23 | 北京中科飞鸿科技股份有限公司 | Frequency modulation method of surface acoustic wave filter chip |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030058061A (en) * | 2001-12-29 | 2003-07-07 | 엘지전자 주식회사 | fabrication method for mono-die Radio Frequency Band Pass Filter using Film Bulk Acoustic Resonator |
| CN101868127A (en) * | 2009-11-24 | 2010-10-20 | 清华大学 | Preparation process of superconductive planar circuit |
| CN102931941A (en) * | 2012-10-29 | 2013-02-13 | 天津理工大学 | FBAR (film bulk acoustic resonator) substrate and preparation method thereof |
| CN102981198A (en) * | 2012-12-12 | 2013-03-20 | 中国科学院长春光学精密机械与物理研究所 | Wet etching method of echelle grating in single-crystal silicon |
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- 2015-12-03 CN CN201510876648.XA patent/CN105553437B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030058061A (en) * | 2001-12-29 | 2003-07-07 | 엘지전자 주식회사 | fabrication method for mono-die Radio Frequency Band Pass Filter using Film Bulk Acoustic Resonator |
| CN101868127A (en) * | 2009-11-24 | 2010-10-20 | 清华大学 | Preparation process of superconductive planar circuit |
| CN102931941A (en) * | 2012-10-29 | 2013-02-13 | 天津理工大学 | FBAR (film bulk acoustic resonator) substrate and preparation method thereof |
| CN102981198A (en) * | 2012-12-12 | 2013-03-20 | 中国科学院长春光学精密机械与物理研究所 | Wet etching method of echelle grating in single-crystal silicon |
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| CN105553437A (en) | 2016-05-04 |
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Address after: 100854 Beijing Haidian District Beijing 142 mail box 85 boxes Patentee after: Beijing Aerospace Micro Electric Technology Co., Ltd. Address before: 100854 Beijing Haidian District Beijing 142 mail box 85 boxes Patentee before: Beijing Changfeng Micro-Electronics Technology Co., Ltd. |