CN110211871B - Method and apparatus for cleaning semiconductor wafer surface - Google Patents
Method and apparatus for cleaning semiconductor wafer surface Download PDFInfo
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- CN110211871B CN110211871B CN201910531022.3A CN201910531022A CN110211871B CN 110211871 B CN110211871 B CN 110211871B CN 201910531022 A CN201910531022 A CN 201910531022A CN 110211871 B CN110211871 B CN 110211871B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The embodiment of the invention provides a method and equipment for cleaning the surface of a semiconductor structure, wherein the method comprises the following steps: and performing physical stripping and chemical etching operations on the structure surface according to a preset cycle period, wherein the chemical etching comprises utilizing chemical liquor to generate chemical reaction with the adhesive on the structure surface, the physical stripping is used for separating the adhesive from the structure surface, the stripping force for realizing the physical stripping is smaller than a stripping force threshold value and is inversely proportional to the cycle number of the cycle period, and the physical stripping and chemical etching operations are stopped when a cleaning end condition is met.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a single-wafer wet cleaning technology.
Background
Silicon wafers or wafers are the most widely used substrate materials for semiconductor devices and integrated circuits, and with the continuous development of very large scale integrated circuits, the line width of the integrated circuits is continuously reduced, and the line manufacturing density is increased. Meanwhile, the line width is continuously reduced, the requirements on the quality of silicon wafers are higher and higher, and particularly the requirements on the surface quality of silicon polishing plates are tighter and tighter, so that the quality and the yield of devices can be seriously influenced by the adhesion substances such as particles, organic contamination and the like on the surfaces of the polishing plates. Therefore, the surface cleaning of the silicon wafer becomes a crucial part in the production of semiconductor materials and devices. As the minimum line width of a semiconductor chip gradually transits from the micron-scale to the nanometer-scale, and accordingly, the cleaning of the surface of a semiconductor device in the semiconductor manufacturing process is gradually changed from batch cleaning mainly using a trench-type apparatus to single-wafer cleaning using a single-wafer-type wet process apparatus. Due to the characteristics of high process effect and high uniformity, the single-wafer cleaning equipment gradually becomes mainstream wet equipment in semiconductor manufacturing.
The single-wafer type wet cleaning equipment mainly works in a single wafer type. Fig. 1 schematically illustrates a wet cleaning apparatus 100 for cleaning a wafer. In operation, the wafer 200 is placed on the rotary platform 102 of the cleaning apparatus 100, the platform 102 rotates to drive the wafer 200 to rotate, and the robot 104 with the chemical etching solution nozzle 103 extends above the wafer 200 to spray the chemical solution onto the surface of the wafer 200. Due to the action of the rotating centrifugal force, the falling points on the liquid medicine wafer 200 are diffused to the periphery, so that the liquid medicine is in contact with the whole upper surface of the wafer 200 and chemically reacts with adhesive particles on the surface, and the particles become small and even dissolve. After a period of time of liquid medicine spraying, the liquid medicine of the wafer 200 is cleaned by deionized water, and meanwhile, the adhesive particles are brought out along with the deionized water fluid by virtue of the adsorption effect, so that the purpose of removing the adhesive particles is achieved. After the operation of the chemical solution and the deionized water is completed, the wafer 200 rotates at a high speed to dry.
In another wet cleaning apparatus, after the liquid chemical is sprayed and before the deionized water is applied, the surface of the wafer 200 may be physically stripped, for example, by blowing gas into the surface of the wafer by an air pressure cleaner, the adhered substance corroded by the liquid chemical may be blown off, so as to achieve a better adhered substance removing effect. However, the current physical stripping method has the problem that if the physical stripping force is a little smaller, the particles cannot be removed, and if the physical stripping force is a little larger or is acted for a long time, the pattern on the surface of the wafer may be damaged, which is particularly serious as the line width of the pattern on the surface of the device becomes finer, so the prior art wet cleaning equipment is only suitable for the occasion with low pattern line density.
Disclosure of Invention
The present invention seeks to provide an improved way of cleaning a semiconductor surface to increase the efficiency of removal of adherent particles from the semiconductor surface. According to the embodiment of the invention, by adopting a cyclic treatment mode combining chemical liquid corrosion and physical stripping and alternately executing physical stripping and chemical corrosion, a remarkable cleaning effect of sticky particles can be realized by a small stripping force.
According to one aspect of the present invention, there is provided a wafer surface cleaning method comprising: performing physical stripping and chemical cleaning operations on the surface of the wafer according to a preset cycle period, wherein the chemical cleaning comprises utilizing chemical liquid to generate chemical reaction with the adhesive on the surface of the wafer so as to loosen or reduce the particle size of the adhesive, the physical stripping is used for separating the adhesive from the surface of the wafer, and the stripping force for realizing the physical stripping is smaller than a stripping force threshold value; and when the cleaning end condition is met, stopping executing the physical stripping and chemical cleaning operation.
According to another aspect of the present invention, there is provided a wafer surface cleaning apparatus comprising: a chemical etching device for supplying a chemical solution to etch the adherent on the surface of the wafer to loosen or reduce the particle size of the adherent; physical stripping means for separating the adherent from the wafer surface; and a control unit configured to: controlling the chemical etching device and the physical stripping device to perform physical stripping operation and chemical cleaning operation on the surface of the wafer according to a preset cycle period, wherein the stripping force for physical stripping is less than a stripping force threshold value; when the cleaning end condition is satisfied, the execution of the physical stripping device and the chemical etching device is terminated.
Additionally, the present invention also provides a machine-readable medium having stored thereon instructions which, when executed by the machine, implement the method of the present invention.
Drawings
FIG. 1 shows a schematic view of a prior art cleaning apparatus;
FIG. 2 illustrates a graph of the effect of adhesive removal over time when only a physical stripping operation is performed, in accordance with one embodiment;
FIG. 3 is a schematic view showing a procedure of treating an adherend when physical peeling and chemical liquid etching operations are alternately performed according to an embodiment;
FIG. 4 illustrates a flow diagram of a method for cleaning a surface of a structure, according to one embodiment of the invention;
FIG. 5 shows a schematic view of a structured surface cleaning apparatus according to one embodiment of the present invention.
Detailed Description
The following describes the apparatus, device and method provided by the embodiments of the present invention in detail with reference to the accompanying drawings. While the preferred embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. In the following description of the embodiments, the semiconductor wafer is processed for example, but it is understood that the present invention is also applicable to the processing of other semiconductor structure surfaces.
When physical peeling is performed on the particles adhered to the surface of the semiconductor wafer, it is found that although the particle removal effect increases as the physical peeling force increases, for example, as the gas flow rate increases when cleaning is performed by using gas pressure, as described above, this aspect risks damaging the formed pattern on the surface of the wafer, and reduces the yield; while the particle removal effect saturates over time even with a constant peel force. Figure 2 shows a graph of particle removal effect over time when only a physical stripping operation is applied.
In the graph shown in fig. 2, the abscissa t represents time and the ordinate E represents particle removal effect, and four curves P1 to P4 representing adhered matter removal effects under 4 physical peeling forces P1 to P4 are shown, wherein physical peeling force P1 < P2 < P3 < P4 as shown. It can be seen that for either curve, there is a significant increase in particle removal efficiency over a short period of time with continued application of the physical stripping force, followed by a near saturation level. For example, for the curve with the maximum peel force P4, the particle removal effect rises rapidly from the start time T1 and approaches the saturation level at time T1, so it is difficult to remove the adherent particles with greater adhesion from the wafer surface. For the curve with the larger peel force P3, starting at the start time T1, the particle removal effect approaches the saturation level at time T2 after a rapid rise. Similarly, for curves with smaller peel forces P2, P1, the particle removal effect approaches the saturation level at times t3, t4, respectively. The rise periods T1-T1, T2-T1, T3-T1, T4-T1 for different peel forces P can be calibrated experimentally or empirically. It can be seen that the particle removal effect rise rate is different for different peel forces P and the maximum level of particle removal effect achieved is also different. However, it can also be seen that if the adhesion of the adherent to the wafer surface is large, even a small peeling force applied for a long time does not exert a physical peeling effect; and the use of excessive physical peel forces or the application of excessive peel forces for extended periods of time may cause damage to the pattern on the surface of the semiconductor wafer.
According to the present invention, it is sufficiently considered that the particle removing effect in which the real effect is significant under any peeling force occurs at the rising period of each curve, and thus the particle removing effect is achieved by sufficiently utilizing the peeling force P located in the rising period by periodically applying the physical peeling operation.
FIG. 3 shows a schematic view of a semiconductor wafer surface treatment according to an embodiment of the present invention, wherein the attachments to be removed are represented by the particles PT shown in the figure, and the particles PT shown in the figure1、PT2… PTn +1 indicates different states of the same particle in alternating chemical etching and physical stripping operations using a stripping force P5. In contrast, the particle removal effect of 4 types of pure physical peeling P1-P4 is also shown in the figure, and P5 has smaller peeling force P5 relative to P1-P4. As shown in the graph of P5, after the peeling force P5 is applied from the start time T1, the particle removal effect rises to near the saturation level at time T2.
According to one embodiment of the present invention, as shown, at time T1, physical stripping of the semiconductor wafer surface is initiated and the equivalent physical stripping force employed is the lower P5. It should be noted that the physical peeling according to the present invention can be realized by any device capable of removing the particles of the surface attachments, such as a gas spraying device, a liquid spraying device, etc., and in the case of being realized by a fluid spraying device such as gas or liquid, the "physical peeling force" according to the present invention is understood to be an impact force generated by the gas or liquid having a certain flow rate.
According to an embodiment of the present invention, a chemical liquid spraying operation on the surface of the semiconductor wafer has been previously performed before the time point T1. In another embodiment, no operation may be performed on the surface of the semiconductor wafer before the time point T1.
From time T1, the physical peeling of the wafer surface by the peeling force P5 is continued until time T2, and then the application of the physical peeling is stopped, and it is apparent that the influence of the peeling force P5 on the particles PT is fully utilized in the period of the peeling time T (═ T2-T1), and the removal effect in the period of T2-T1 is shown by a curve segment L1. According to another embodiment of the invention, the time T for physically peeling the surface of the wafer can also be set to be less than the fast rising time T2-T1 calibrated for the peeling force P5, and the peeling time T can also be set to be slightly more than the fast rising time T2-T1 according to actual needs.
Then, starting at time T2, the physical stripping operation is stopped, and the operation is switched to the operation of applying the chemical liquid spraying to the surface of the semiconductor wafer, as shown by the chain line D1, the applied chemical liquid can react with the attached particles, so as to further erode the particles PT subjected to the physical stripping operation in the period from the earlier period T2 to T1, and the chemical erosion process is continued until time T3.
Subsequently, during the time period from T3 to T4, the physical stripping operation is switched to the wafer surface again, and the stripping force P5 is continuously applied to the semiconductor wafer surface, wherein the time period from T3 to T4 can be set to be equal to T2 to T1, i.e., the rising period with the most obvious effect of the stripping force P5 is still applied, as shown by the curve segment L2 in the figure, and the curve segment L2 is substantially the same as L1, which means that the stripping force P5 with the substantially same rising period is applied. As schematically shown in FIG. 3, the separation effect of the particles PT from the surface of the wafer structure is not significant during the time period T2-T1 when the peeling force P5 is applied, such as PT1It is shown that even with a constant application of the peeling force P5, the separating effect is difficult to optimize further. However, according to the invention, after the chemical etching operation in the time period of T2-T3, and the same physical stripping of the P5 is carried out on the surface of the wafer in the time period of T3-T4, gaps appear between the particles and the surface of the wafer, such as PT in the figure2As shown. Further, as shown by the curve L2 representing the removal effect in the period of T3-T4, the removal effect thereof has been larger than that representing the large peeling force P1. When the time T4 is reached, the peeling operation P5 is stopped, and the application is switched to the semiconductor wafer again as indicated by the chain line D2And applying a chemical liquid medicine spraying operation on the surface to further corrode the particles PT subjected to the physical stripping operation in the early period T3-T4, wherein the chemical corrosion process is continued until a time point T5, the chemical liquid medicine spraying is stopped when the time point T5 is reached, and as shown by a curve L3 in the figure, in the period T5-T6, switching is carried out to physical stripping, and the physical stripping operation P5 is continuously executed on the surface of the semiconductor wafer, wherein the applied time T5-T6 is still the rising period with the most obvious stripping force P5 effect. As shown in the figure PT3, at this time PT3The indicated particle gap with the wafer surface continues to grow, at which point the particle removal effect has exceeded that achieved by simply applying the greater peel force P3, as shown by curve L3. After time point T6, the chemical liquid spray operation was switched to. By cyclic operation of the above-mentioned physical stripping
And (3) carrying out chemical liquid spraying operation, and finally completely separating the particles PT from the surface of the wafer by physical stripping operation at the Tn +1 th time point, as shown by PTn +1, thereby realizing the purpose of removing the attachment particles. It can be seen that physical peel P5 was applied by cycling
The chemical etching operation can achieve better removal effect with smaller peeling force P5, and obviously, the smaller peeling force P5 can greatly reduce the possibility of damaging the surface pattern of the semiconductor wafer, and therefore, the method can be applied to the manufacturing and cleaning process of finer line width.
Using the processing scheme shown in FIG. 3, in accordance with the present invention, a method for cleaning a surface of a semiconductor structure is provided, wherein a physical stripping and a chemical etching are performed on the surface of the semiconductor structure according to a predetermined cycle period, wherein the equivalent stripping force of the physical stripping is less than a stripping force threshold FTAnd when the cleaning end condition is met, stopping the physical stripping and chemical liquid corrosion operations on the structure surface. Peel force threshold value F hereTIs a value determined on the basis of the characteristics of the semiconductor surface to be treated, above which peeling force threshold F is exceededTWill be halvedThe conductor surface pattern causes damage. Figure 4 illustrates a method flow diagram of a semiconductor wafer surface cleaning process in accordance with one embodiment.
As shown in the figure, in step 401, the chemical cleaning is performed on the surface of the semiconductor wafer for a predetermined time TChemistrySo as to corrode the attachments on the surface, thereby achieving the purpose of loosening or reducing the size of the attachments. T isChemistryIs a predetermined experimental value. Since the present invention employs a multi-cycle cleaning operation, the cleaning time T in each cycleChemistryMay be set to, for example, milliseconds. The etching of the surface deposits can be effected here with the aid of any chemical liquid known in the art, for example NH3OH/H2O2/H2SC1 cleaning solution of O-mixed chemical solution and hydrofluoric acid (HF) cleaning or NH cleaning4OH and the like. For example, HF cleaning solution is used to remove the native oxide film on the wafer surface, wherein the particles of metals such as aluminum and iron attached to the native oxide film are dissolved or reduced, and HF also suppresses the formation of the oxide film. The metal hydroxide attached to the natural oxide film can be cleaned by using HF, and the surface of the wafer is hardly corroded while the natural oxide film is corroded. The specific chemical solution and the corresponding concentration used according to the present invention may depend on the semiconductor surface to be cleaned, and the present invention is not described herein again.
Cleaning time T for semiconductor wafer surface by using chemical liquidChemistryThereafter, the chemical cleaning operation is stopped, and the process proceeds to step 402 where the physical stripping of the adherent particles from the surface of the semiconductor wafer is performed. The physical stripping operation can be performed by techniques known in the art, such as jet cleaning with nitrogen or water, Acoustic cavitation (Acoustic cavitation), Acoustic streaming (Acoustic streaming), laser bubbles (laser bubbles), droplet impact (droplet impact), and ultrasonic cleaning. As can be seen from the foregoing description in conjunction with FIG. 3, the time T at which the physical stripping operation is performed in step 402Physics of physicsMay be set to be less than or equal to a period of time in which the rising slope of the curve corresponding to the applied physical peeling force is large, such as the time T5 in the case of applying the physical peeling force P5 shown in FIG. 3Physics of physicsMay be set to be less than or equal to the rise period T2-T1, and therefore, the rise period T2-T1 determined in the experiment may be taken as the time TPhysics of physicsThe threshold value of (2). In another example of the present invention, T may be further definedPhysics of physicsIs set in inverse proportion to the peeling force P, for example, according to the present embodiment, the peeling time T set when P5 is adoptedPhysics of physicsMay be greater than the set physical time T when P1 is usedPhysics of physics. In an alternative embodiment, T may also be usedPhysics of physicsSet to a constant value.
Furthermore, according to a preferred embodiment, the chemical solution is heated to a higher temperature, for example above a temperature threshold T, when the chemical solution spray is performedTH1; while performing a fluid jet or droplet impact physical stripping operation, such as nitrogen or water, on the wafer surface, the fluid or droplet is maintained at a lower temperature, such as below a temperature threshold TTH2. By configuring the temperature of the chemical liquid and the temperature of the physical stripping liquefaction, on one hand, the effect of chemical reaction between the liquid and the particles can be enhanced, and on the other hand, the particles are subjected to different temperatures in the chemical corrosion and physical stripping stages, so that different thermal stress differences are applied to the particle surfaces, the effect of 'loosening' and separating the particles from the wafer surface can be further enhanced, and the particle removal effect can be further improved.
Completing the predetermined time T at step 402Physics of physics Step 403 is entered where it is determined whether a cleaning end condition is satisfied, where the cleaning end condition may be whether the cleanliness of the wafer surface reaches a cleanliness threshold, such as 85%, according to an example, which may be detected by a detection instrument. In another example, the cleaning end condition may be whether the number of cycles of applying the physical peeling force and the chemical cleaning reaches a cycle threshold CTGenerally, it can be confirmed by experiment that C has passedTThe cleanliness of the semiconductor wafer surface after the alternating physical stripping and chemical cleaning is satisfactory, for example, 85% of the particles on the wafer surface are effectively removed. In another example, the end-of-cleaning condition may be an alternate applicationWhether the total time of the physical stripping and chemical cleaning operation reaches the time threshold TTGenerally, how long time T has elapsed can be determined experimentallyTThe cleanliness of the semiconductor wafer surface after the alternating operation of physical stripping and chemical cleaning can meet the specified requirements.
If it is determined in step 403 that the cleaning end condition has not been satisfied, proceed to the next cycle, repeat step 401-403, i.e., switch to chemical etching cleaning the surface of the semiconductor wafer and after the cleaning time T has elapsedChemistryAnd then switching to the physical stripping operation of the surface of the semiconductor wafer. It is noted here that in different cycle periods, the ratio of the operating time of the physical stripping and chemical cleaning operations in each cycle period, i.e., TPhysics of physics/TChemistryMay be fixed; however, in another embodiment, the duty ratio may be adjusted according to the actual effect, for example, the cleaning time T in one cycle is increasedChemistryWhile reducing the physical stripping time TPhysics of physics(ii) a Or simultaneously reducing the cleaning time TChemistryAnd physical stripping time TPhysics of physicsThereby improving the alternation cycle times of chemical liquid cleaning and physical stripping in unit time. Further, in accordance with an example of the present invention, in the physical stripping operation, the physical stripping force applied is less than a stripping force threshold FT. In addition, in another embodiment, the physical stripping force is further defined to be inversely proportional to the cycle number of the cycle period, and the smaller the stripping force is, the less the damage to the semiconductor surface is, but the more the cycle number is needed to achieve the cleaning target; conversely, if a greater peel force is used, fewer cycles may be required to achieve the cleaning goal. Thus, in practicing the present invention, the peel force is selected in addition to satisfying the threshold FTBesides, the time cost is also considered according to the actual situation.
The chemical cleaning and physical stripping operations are performed by repeated cycles until it is determined at step 403 that the cleaning end condition is satisfied, whereupon the next process flow for semiconductor processing is entered at step 404. For example, in step 404, the semiconductor surface is cleaned with deionized water to remove the chemical solution. Subsequently, in step 405, a drying process is performed on the semiconductor surface, thereby ending the entire cleaning process.
It should be noted that the step 404 and 405 shown in fig. 4 are not necessary, and for example, in some surface deposit removing processes, only the chemical etching and physical stripping operations need to be performed, and the de-ion cleaning and drying processes need not be performed. The method of the invention is therefore not limited to the embodiments shown here.
In addition, in this embodiment, steps 401 and 402 are also interchangeable, i.e., the particles only slightly adhering to the surface are removed in advance by the physical stripping operation, and then the chemical etching operation is performed.
In another embodiment of the present invention, the physical stripping and the chemical etching can be performed simultaneously on the surface of the semiconductor wafer during each cycle, for example, the chemical can be sprayed onto the surface of the wafer at a constant speed, and the spraying time can be set to TPhysics of physicsAnd TChemistryGreater or other suitable value, and then stalled for a time TAir conditionerAnd the next injection is continued. So that the corroded particles are brought out along with the sprayed chemical liquid medicine by virtue of adsorption, thereby achieving the purpose of removing the particles.
The method for cleaning the surface of the semiconductor structure can be applied to cleaning equipment for a semiconductor process. FIG. 5 shows a schematic diagram of a semiconductor cleaning apparatus according to one embodiment of the present invention. As shown, the cleaning apparatus 500 includes a chemical etching device 501, a physical stripping device 503, and a control unit 505. It should be noted that, in addition to the chemical etching apparatus 501, the physical stripping apparatus 503 and the control unit 505 shown in fig. 5, the semiconductor cleaning apparatus in the embodiment may also include other apparatuses or units according to the actual functions performed by the semiconductor cleaning apparatus, and the details are not described herein.
In this example, the operation of the cleaning apparatus 500 is described by taking the cleaning of the adhered particles on the wafer surface as an example. As an example, the chemical etching apparatus 501 may be SC1 cleaningThe device is used for spraying the SC1 solution on the surface of the wafer to corrode the particles on the surface of the wafer. For example, in operation, the wafer may be placed on a rotating platform of the cleaning apparatus 500, and the wafer may be rotated by the rotation of the platform, while the chemical etching apparatus 501 sprays the SC1 onto the surface of the wafer, and the SC1 is spread by the centrifugal force generated by the rotation of the platform to be uniformly coated on the entire surface of the wafer. The physical stripping device 503 may be a nitrogen gas injection device for blowing nitrogen gas to the wafer surface to blow off or loosen particles attached to the wafer surface. In this example, when chemical liquid spraying is performed, the SC1 solution is heated to be greater than the temperature threshold T TH1 while the nitrogen gas performing the physical stripping is kept below a temperature threshold TTH2, in the presence of a catalyst.
The control unit 505 controls the chemical etching device 501 and the physical stripping device 503 to alternately perform the SC1 etching and the nitrogen gas spraying operations on the wafer surface according to a predetermined cycle period, wherein the speed of the nitrogen gas spraying is controlled so that the stripping force generated by the nitrogen gas spraying on the particles on the wafer surface is less than a predetermined threshold value FTAnd is inversely proportional to the number of cycles. For example, if it was desired to complete the cleaning of the wafer surface by 20 shots, and it is desired to complete the cleaning by 10 shots, the nitrogen gas injection rate should be increased to 2 times, provided of course that it is still less than the threshold value FT. According to an embodiment of the invention, the predetermined threshold value FTWhich is the limit of the surface resistance associated with a feature of the wafer surface, which feature may be, for example, a surface pattern, it is clear that the pattern protruding from the structure surface should be subjected to a lower peel force than the recessed pattern, and therefore the limit of the resistance of the protruding pattern should be set to a lower value than the recessed pattern. Threshold of influence FTThe characteristic(s) of (d) may also include the line width of the surface pattern, it being understood that the smaller the line width, the lower the bearing force, and thus the threshold value FTShould be set to a lower value. Threshold of influence FTThe characteristics of (a) may also include other factors such as the material of the semiconductor surface, etc.
According to an example, the control unit 505 controls the operation of the chemical etching apparatus 501 and the physical stripping apparatus 503 during each cycleTime TPhysics of physicsAnd TChemistryAnd simultaneously controlling the rotation speed of the rotary platform to respectively adapt to the chemical etching and the physical stripping, wherein the control unit 505 controls the rotary platform to rotate at a first rotation speed omega 1 for an operation time T when the chemical liquid spraying is performedChemistryAnd, when the physical peeling is performed, the control unit 505 controls the rotation table to rotate at the second rotation speed ω 2 for the operation time TPhysics of physicsAs one example, the first rotational speed ω 1 is less than the first rotational speed threshold ωTH1The second rotation speed ω 2 is greater than the second rotation speed threshold ωTH2Wherein the second rotation speed threshold value ωTH2Greater than a first speed threshold ωTH1. Thus, by setting different rotation speeds at different operating stages, this change in rotation speed produces a regular stress change between the particles and the wafer surface, thus contributing even more to the loosening of the particles from the wafer surface. T can be further controlled while different rotating speeds are set for chemical corrosion and physical strippingPhysics of physicsAnd TChemistryThe ratio of the operating time of (c). According to one example, the physical stripping to chemical cleaning operation time-occupying ratio T is set in each cyclePhysics of physics/TChemistryIs fixed, in another embodiment, the physical stripping and chemical cleaning operation time T can be adjusted according to the monitoring conditionPhysics of physicsAnd TChemistry. In another example, the time T of the chemical etching operation may also be set according to the concentration of the chemical solution usedChemistryFor example, a smaller T may be used when the concentration is highChemistryAnd a larger T may be used when the concentration is lowChemistry. Furthermore, the rate at which the physical stripping apparatus 503 injects nitrogen may also be varied during different cycle periods, in accordance with embodiments of the present invention.
In addition, the control unit 505 further monitors whether the current cleaning satisfies a cleaning end condition, wherein when the cleaning end condition is satisfied, the SC1 spray and nitrogen gas spray operations on the wafer surface are terminated, and when the cleaning end condition is not satisfied, the next cycle is continued, and the SC1 spray and nitrogen gas spray operations on the wafer surface are continued. In this example, the purge end condition may be that the number of cycles of nitrogen injection and SC1 etching is cyclically performed reaches a predetermined cycle threshold, or the like. Here, the predetermined threshold value of the number of cycles is a value obtained by experiments, for example, when the number of cycles is repeated for 50 times, the cleanliness of the wafer surface can reach 85%, and when the improvement of the cleanliness is not much when the number of cycles is increased, the predetermined threshold value of the number of cycles can be set to 50 times.
It should be noted here that although the chemical etching apparatus 501 and the physical stripping apparatus 503 are shown separately, in another embodiment, the chemical etching apparatus 501 and the physical stripping apparatus 503 may be integrated together, that is, the chemical etching apparatus 501 and the physical stripping apparatus 503 can simultaneously perform the chemical solution etching and the physical stripping operation on the wafer surface, for example, the chemical etching solution such as NH is applied during the rotation of the wafer along with the platform3OH/H2O2/H2The O mixed liquid medicine is sprayed onto the surface of the rotating wafer at a certain spraying speed, so that the double effects of chemical corrosion and physical separation are achieved.
Although the processing operation of the wafer surface is described in connection with the above embodiments, the present invention is not limited to processing wafers, but may be applied to all other semiconductor wafers requiring a surface cleaning process. One or more embodiments provided in accordance with the present invention have the following advantages: by alternately performing the chemical etching and the physical stripping operations, it is possible to continuously loosen-weaken (or reduce the adhesion) particles, so that the effect of rapidly stripping the adhesion particles with a smaller stripping force can be achieved, thereby effectively preventing the pattern on the surface of the semiconductor wafer from being damaged due to the application of a larger stripping force. Therefore, the cleaning apparatus according to the present invention is particularly suitable for a semiconductor apparatus having a high pattern line density.
It is to be noted here that, although the present invention has been described in connection with the above preferred embodiments, it is apparent that the present invention is not limited thereto. For example, another embodiment of the invention provides a machine-readable medium having stored thereon machine-readable instructions, which when executed by a computer, cause the computer to perform any of the methods disclosed herein. In particular, a system or apparatus may be provided which is provided with a machine-readable medium on which software program code implementing the functionality of any of the embodiments described above is stored and which causes a computer of the system to read and execute machine-readable instructions stored in the machine-readable medium. In this case, the program code itself read from the machine-readable medium can realize the functions of any of the above-described embodiments, and thus the machine-readable code and the machine-readable medium storing the machine-readable code form part of the present invention.
While the invention has been shown and described in detail in the drawings and in the preferred embodiments, it is not intended to limit the invention to the embodiments disclosed, and it will be apparent to those skilled in the art that various combinations of code auditing means in the various embodiments described above may be used to obtain further embodiments of the invention, which are also within the scope of the invention.
Claims (15)
1. A wafer surface cleaning method comprises the following steps:
alternately performing physical stripping and chemical cleaning operations on the surface of the wafer according to a predetermined cycle period, wherein the chemical cleaning comprises utilizing chemical liquid to generate chemical reaction with the adhesive on the surface of the wafer to loosen or reduce the particle size of the adhesive, the physical stripping is used for separating the adhesive from the surface of the wafer, the stripping force for realizing the physical stripping is smaller than a stripping force threshold value, the temperature of the chemical liquid for the chemical cleaning is larger than a first temperature threshold value, and the temperature of the fluid for realizing the physical stripping is smaller than a second temperature threshold value, and the second temperature threshold value is smaller than the first temperature threshold value;
and when the cleaning end condition is met, stopping executing the physical stripping and chemical cleaning operation.
2. A method for cleaning a surface of a wafer as recited in claim 1, wherein the cleaning end condition is one of:
the cleanliness of the surface of the wafer reaches a cleanliness threshold;
the cycle number of the physical stripping and the chemical cleaning reaches a cycle threshold value; and
the physical stripping and the chemical cleaning are performed for a time reaching a time threshold.
3. The wafer surface cleaning method of one of claims 1-2, wherein,
the ratio of the operating time of the physical stripping and chemical cleaning operations in different cycle periods is variable, an
The physical peel force is variable over different cycle periods.
4. A method for cleaning a wafer surface as recited in one of claims 1-2, wherein the physical stripping operation time is inversely proportional to the stripping force and is less than or equal to a predetermined time value associated with the stripping force during each cycle.
5. A method for cleaning a surface of a wafer as claimed in any one of claims 1-2, wherein the method is performed on a semiconductor cleaning apparatus having a rotating platform for rotating the wafer, wherein
The time of the chemical cleaning operation depends on a first rotation speed of the rotary platform when performing the chemical corrosion, the first rotation speed is less than a first rotation speed threshold value
The time of the physical stripping operation depends on a second rotation speed of the rotating platform when the physical stripping is performed, wherein the second rotation speed is greater than a second rotation speed threshold value, and the second rotation speed threshold value is greater than the first rotation speed threshold value.
6. A method of cleaning a wafer surface as claimed in any one of claims 1-2, wherein the strip force threshold is a tolerance threshold associated with a characteristic of the wafer surface, wherein the characteristic comprises one or more of:
the material of the wafer surface;
a pattern of the wafer surface; and
the line width of the pattern.
7. A method for cleaning a surface of a wafer as recited in one of claims 1-2, further comprising: and after the physical stripping and chemical cleaning operation is finished, carrying out the cleaning operation of the chemical liquid and the drying operation of the wafer surface on the wafer surface.
8. A wafer surface cleaning apparatus comprising:
a chemical etching device for supplying a chemical solution to etch the adherent on the surface of the wafer to loosen or reduce the particle size of the adherent;
physical stripping means for separating the adherent from the wafer surface; and
a control unit configured to:
controlling the chemical etching device and the physical stripping device to alternately perform a physical stripping operation and a chemical cleaning operation on the surface of the wafer according to a preset cycle period, wherein the stripping force for physical stripping is less than a stripping force threshold value, the temperature of chemical liquid for chemical cleaning is greater than a first temperature threshold value, and the temperature of fluid for realizing physical stripping is less than a second temperature threshold value, wherein the second temperature threshold value is less than the first temperature threshold value;
when the cleaning end condition is satisfied, the execution of the physical stripping device and the chemical etching device is terminated.
9. An apparatus for cleaning a surface of a wafer as recited in claim 8, wherein the cleaning end condition is one of:
the cleanliness of the surface of the wafer reaches a cleanliness threshold;
the cycle number of the physical stripping and the chemical cleaning reaches a cycle threshold value; and
the physical stripping force and the chemical cleaning are performed for a time reaching a time threshold.
10. The wafer surface cleaning apparatus according to claim 9, wherein the control unit controls the chemical etching device and the physical stripping device to perform physical stripping and chemical cleaning on the wafer surface in an alternating manner during each cycle period;
wherein the temperature of the chemical liquid used for the chemical cleaning is greater than a first temperature threshold, and the temperature of the fluid used for achieving the physical stripping is less than a second temperature threshold, wherein the second temperature threshold is less than the first temperature threshold.
11. Wafer surface cleaning apparatus according to one of claims 8 to 10, wherein,
the control unit controls the ratio of the operation time of the physical stripping and chemical cleaning operations to be variable in different cycle periods, and the physical stripping force to be variable in different cycle periods.
12. The wafer surface cleaning apparatus of one of claims 8-10, wherein the physical stripping operation time is inversely proportional to the stripping force and is less than or equal to a predetermined time value associated with the stripping force during each cycle period.
13. The wafer surface cleaning apparatus of one of claims 8-10, wherein the wafer surface cleaning apparatus has a rotating platform that rotates the wafer, wherein
The time of the chemical cleaning operation depends on a first rotation speed of the rotary platform when the chemical cleaning is performed, wherein the first rotation speed is less than a first rotation speed threshold value
The time of the physical stripping operation depends on a second rotation speed of the rotating platform when the physical stripping is performed, wherein the second rotation speed is greater than a second rotation speed threshold value, and the second rotation speed threshold value is greater than the first rotation speed threshold value.
14. Wafer surface cleaning apparatus according to any of claims 8-10, wherein the peel force threshold is a tolerance threshold associated with a characteristic of the wafer surface, wherein the characteristic comprises one or more of:
the material of the wafer surface;
a pattern of the wafer surface; and
a line width of the pattern.
15. A machine-readable medium having stored thereon instructions which, when executed by the machine, implement the method of any of claims 1-7.
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| US7432177B2 (en) * | 2005-06-15 | 2008-10-07 | Applied Materials, Inc. | Post-ion implant cleaning for silicon on insulator substrate preparation |
| JP5782279B2 (en) * | 2011-01-20 | 2015-09-24 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing apparatus |
| CN103050394B (en) * | 2011-10-13 | 2015-10-14 | 上海华虹宏力半导体制造有限公司 | The lithographic method of super thick photoresist |
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| CN101885163A (en) * | 2009-05-14 | 2010-11-17 | 宋健民 | Method for using squirt gun to auxiliarily perform chemical mechanical polishing processing program and system thereof |
| CN207611744U (en) * | 2017-12-28 | 2018-07-13 | 德淮半导体有限公司 | Scavenger system and automation crystal column surface cleaning device |
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