CN105196161B - grinding method - Google Patents
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- CN105196161B CN105196161B CN201410265015.0A CN201410265015A CN105196161B CN 105196161 B CN105196161 B CN 105196161B CN 201410265015 A CN201410265015 A CN 201410265015A CN 105196161 B CN105196161 B CN 105196161B
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Abstract
The present invention provides a kind of grinding method, including the forming material layer on wafer to be ground；Grinding crystal wafer is treated successively to be surface-treated, corresponding chemical mechanical grinding step is executed to multiple wafers to be ground, multiple corresponding chemical mechanical grinding steps of wafer to be ground after the completion of, it is unified that multiple wafers to be ground are switched into corresponding next step；The time of last chemical mechanical grinding step is set to be not less than the time of other chemical mechanical grinding steps；Surface treated several wafers are successively rinsed.The beneficial effects of the present invention are, prevent the last wafer in the wafer of a batch because last chemical mechanical grinding step is too fast, and relatively premature the case where leaving milling apparatus and entering rinsing step, the problem of last wafer to avoid as far as possible, which is forced in rinsing step because entering rinsing step too early, stops the longer time, and bring is by a greater degree of corrosion.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and in particular to a kind of grinding method.
Background technique
In order to keep up with the at full speed of super large-scale integration (Ultra Large Scale Integration, ULSI)
Development, the manufacture craft of semiconductor devices become to become increasingly complex and finely.
Such as：In order to further decrease the characteristic size of transistor, while the performance of transistor is promoted, current transistor
Manufacture craft gradually then carry out ion implanting to form the preceding grid technique of source region and drain region, after being changed by being initially formed grid
Grid technique (gate last).Grid technique is initially formed pseudo- grid (dummy gate) after this, then forms source region and drain region, then cover
Lid interlayer dielectric layer, and pseudo- grid are removed to form opening, then packing material forming material layer in the opening in interlayer dielectric layer.
It after forming material layer, needs to remove extra material by flatening process, only retains the material being located in the opening
Using the grid as transistor.
Meanwhile the flatening process being widely used at present is chemical mechanical grinding (Chemical Mechanical
Polishing, CMP) technique, this technique is to reach one of common method of global planarizartion.
It is flat when using chemical mechanical grinding removal excess stock formation grid but after the prior art in grid technique
It is not ideal enough to change effect, is easy that material layer is caused to corrode, and the yield of the corrosion impact grid of material layer, or even influence to be formed
Transistor performance.
Therefore, how to reduce corrosion of the entire process of lapping to material layer becomes this field to improve the performance of transistor
Technical staff's one of the technical problems that are urgent to solve.
Summary of the invention
Problems solved by the invention is to provide a kind of grinding method, to reduce corrosion of the process of lapping to material layer.
To solve the above problems, the present invention provides a kind of grinding method, including：
Several wafers to be ground are provided；
The forming material layer on the wafer to be ground；
Several wafers to be ground for being formed with material layer are successively surface-treated, including：To multiple wafers to be ground
Corresponding chemical mechanical grinding step is executed, and equal in multiple corresponding chemical mechanical grinding steps of wafer to be ground
After the completion, unified that the multiple wafer to be ground is switched into corresponding next step；
Grind the time of last chemical mechanical grinding step in the surface treatment not less than other chemical machineries
Grind the time of step；
Several wafers Jing Guo the surface treatment are successively rinsed.
Optionally, after being successively rinsed to several wafers Jing Guo the surface treatment, the grinding method is also
Including：
Several wafers after rinsing successively are cleaned；
The step of being successively surface-treated to several wafers to be ground for being formed with material layer include：The surface treatment
The time of last chemical mechanical grinding step is not less than the time of the cleaning step in step.
Optionally, last chemical mechanical grinding step in the surface treatment includes：Remove some materials layer
Practical chemical mechanical grinding step, and the pseudo- chemical mechanical grinding step of material layer is not removed.
Optionally, the step of being successively surface-treated to several wafers to be ground for being formed with material layer include：
Milling apparatus is provided, is provided in the milling apparatus and is corresponded respectively to each the multiple of chemical mechanical grinding step and grind
Grind unit；
The multiple grinding unit is to the wafer to be ground for being respectively at different chemical mechanical grinding steps while grinding
Mill；
Several wafers to be ground are sequentially placed in the milling apparatus, to carry out the surface treatment.
Optionally, the chemical mechanical grinding carried out first in the step of being successively surface-treated is that the first chemical machinery is ground
Grind step；
The step of being successively surface-treated to several wafers to be ground for being formed with material layer include：
The wafer to be ground being located at except milling apparatus is moved in milling apparatus and corresponds to the first chemical mechanical grinding
The grinding unit of step, meanwhile, by the crystalline substance to be ground in the grinding unit for being positioned corresponding to last chemical mechanical grinding step
Circle removes milling apparatus, the step of to carry out the flushing；
Either, the wafer to be ground being located at except milling apparatus is moved in milling apparatus and corresponds to the first chemical machine
The grinding unit of tool grinding steps；
Either, the wafer to be ground in the grinding unit for being positioned corresponding to last chemical mechanical grinding step is removed
Milling apparatus, to carry out the flushing.
Optionally, the step of being successively surface-treated to several wafers to be ground for being formed with material layer include：
First, second and third chemical mechanical grinding step are successively carried out to wafer, wherein the third chemical machinery
The milling time of grinding steps not less than the first chemical mechanical grinding step or the second chemical mechanical grinding step grinding when
Between.
Optionally, the step of being successively surface-treated to several wafers to be ground for being formed with material layer include：Make
One, second and third chemical mechanical grinding step milling time it is all the same.
Optionally, the step of being successively surface-treated to several wafers to be ground for being formed with material layer include：Make
One, second and the milling time of third chemical mechanical grinding step be 90~110 seconds.
Optionally, the step of forming material layer includes：Form the material layer of aluminum material.
Optionally, the step of being successively rinsed to surface treated several wafers include：It is molten using hydrogen peroxide
Liquid is rinsed surface treated several wafers.
Optionally, the step of being successively rinsed to surface treated several wafers include：Make the hydrogen peroxide
Concentration of hydrogen peroxide is in the range of 1% to 29% in solution.
Optionally, the step of being successively rinsed to surface treated several wafers include：Using CP72B solution or
Person CP76 solution is rinsed the surface treated wafer.
Optionally, to through flushing after several wafers successively clean the step of include：Using CP72B solution or
CP76 solution cleans the wafer by rinsing.
Optionally, after the step of wafer to be ground is provided, the step of forming material layer before, the grinding method is also
Including：
Interlayer dielectric layer is formed in the crystal column surface to be ground, is formed with several openings in the interlayer dielectric layer；
The step of forming material layer include：The material layer is filled in said opening, described in the material layer also covers
Inter-level dielectric layer surface；
The step of being successively surface-treated to several wafers to be ground for being formed with material layer include：Grind the material
Layer retains the material layer being located in opening, only to remove the material layer of inter-level dielectric layer surface to form grid.
Compared with prior art, technical solution of the present invention has the following advantages that：
Multiple corresponding chemical mechanical grinding steps of wafer to be ground after the completion of, it is unified by the multiple wait grind
Mill wafer switches to corresponding lower step；That is, all grinds when all chemical mechanical grinding steps finish
Mill wafer just can uniformly be switched to corresponding next step, so, the unified opportunity for switching all grinding crystal wafers
Depending on milling time longest one in several chemical mechanical grinding steps；It will the last one described chemical mechanical grinding step
Milling time be set as the time not less than other chemical mechanical grinding steps, the interval for switching all grinding crystal wafers can be made
Time depends on the time of the last one chemical mechanical grinding, so that treating in the step of grinding crystal wafer is surface-treated
The time interval of switch step is consistent as far as possible, so as to prevent in a batch wafer to be ground last wafer because
Enter the step of rinsing surface treated wafer too early, and in the rinsing step the problem of stay longer,
And then reduce the corrosion that rinsing step treats grinding crystal wafer.
Further, make the milling time of the last one chemical mechanical grinding step nor less than the cleaning step
Time, after avoiding the wafer after surface treatment to enter rinsing step as far as possible, other wafers before this wafer are still within
Cleaning step causes this wafer to still need the problem of waiting in rinsing step.
Detailed description of the invention
Fig. 1 is the flow diagram in one embodiment of grinding method of the present invention；
Fig. 2 is the structural schematic diagram for executing the milling apparatus of grinding method shown in Fig. 1.
Specific embodiment
In the prior art, after carrying out chemical mechanical grinding to material layer, frequently with deionized water (De-ionized
Water, DIW) surface of material layer is rinsed.But in practical applications due to existing chemical mechanical milling tech
It usually carries out, and is usually contained in chemical mechanical milling tech multiple for the material layer on multiple (batch) wafers
Grinding steps, meanwhile, in order to improve efficiency, multiple grinding units are often equipped in existing milling apparatus, for executing respectively
Different grinding steps.In synchronization, different grinding units grinds the wafer in different grinding steps, works as institute
Some grinding units complete grinding after, milling apparatus carries out unified switching, by all wafers be moved to it is corresponding under
In the grinding unit of one grinding steps, that is to say, that switching is all with milling time longest in all grinding steps every time
Grinding steps subject to, the longest grinding steps of having time just uniformly switch over after completing.It will when this makes to switch every time
Wafer remove milling apparatus time interval be it is identical, correspondingly, the washing time of each wafer be also it is identical, in punching
The wafer in step is washed in the cleaning step for entering next step after rinsing.
But the rinsing step be easy to cause the corrosion of wafer when using this grinding method, such as：When going to one
When the last wafer of a batch, and when last wafer is in the last one grinding steps of milling apparatus, at this time
Milling apparatus in be only left this wafer, that is to say, that the switching of milling apparatus at this time is no longer to depend on all grinding
The time longest one is ground in step, but depends on the milling time of the last one grinding steps.The problem of being brought with this be,
The milling time of the last one grinding steps may be relatively short, and milling apparatus just switches over after the shorter time, will
The last wafer removes milling apparatus, that is to say, that and last wafer premature may enter rinsing step, but
Be at this time before wafer also in cleaning step, the last wafer can only wait relatively longer in rinsing step
Time after, just can enter subsequent cleaning step.
And as mentioned above, the material on wafer and wafer is often rinsed using deionized water in the prior art
Layer, and deionized water has certain corrosiveness for material layer, the time that wafer is contacted with deionized water is longer, on wafer
Material layer it is higher by the degree corroded.By taking the metal gates of aluminum material as an example, the hydroxyl (OH-) of deionized water is easy to
To a certain extent the metal gates of aluminum material are caused to corrode.
So existing lapping mode is easy to cause to corrode to the material layer being ground.
To solve the above-mentioned problems, the present invention provides a kind of grinding method, includes the following steps：
Several wafers to be ground are provided；The forming material layer on the wafer to be ground；To being formed with the several of material layer
Wafer to be ground is successively surface-treated, including：Corresponding chemical mechanical grinding step is executed to multiple wafers to be ground
Suddenly, and multiple corresponding chemical mechanical grinding steps of wafer to be ground after the completion of, it is unified will be the multiple to be ground
Wafer switches to corresponding next step；Make the time of last chemical mechanical grinding step in the surface treatment
Not less than the time of other chemical mechanical grinding steps；Several wafers Jing Guo the surface treatment are successively rinsed.
Through the above steps, it is not less than the time of the last one chemical mechanical grinding step in the surface treatment
The time of other chemical mechanical grinding steps can prevent last a piece of to be ground in the wafer to be ground an of batch as far as possible
The step of wafer is because of the too early surface treated wafer into flushing, and the stay longer in the rinsing step
Problem, and then reduce the problem of rinsing step treats the corrosion of grinding crystal wafer.
To make the above purposes, features and advantages of the invention more obvious and understandable, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
In the present embodiment, several wafers to be ground can be first provided, rear grid technique is then used, in the crystalline substance to be ground
Circular surfaces form interlayer dielectric layer, are formed with several openings in the interlayer dielectric layer, and fill the material in said opening
The bed of material, the material layer also cover the inter-level dielectric layer surface.
Further, layer of aluminum is formed in the present embodiment, the layer of aluminum is used to pass through subsequent surface treatment step
Afterwards, the metal gates of semiconductor devices are formed.
But the present invention, to using which kind of metal material and without limitation, other metal materials can also form the material
The bed of material.
After forming material layer, the material layer on several wafers to be ground is surface-treated, to remove inter-level dielectric
The material layer of layer surface retains the material layer being located in opening, to form metal gates.
In conjunction with reference Fig. 1 and Fig. 2, wherein Fig. 1 is the flow diagram of grinding method in this implementation, and Fig. 2 is to execute Fig. 1 institute
Show the structural schematic diagram of the milling apparatus of grinding method；
It, will be into the step of the surface treatment after several wafers to be ground of one batch distinguish forming material layer
10, comprising the multiple chemical mechanical grinding steps successively carried out in the step 10 of the surface treatment, example successively carries out as shown in figure 1
First, second and third chemical mechanical grinding step 11,12 and 13, in a batch will per a piece of wafer to be ground
Successively pass through these chemical mechanical grinding steps.
It should be noted that above-mentioned first, second and third chemical mechanical grinding step 11,12 and 13 are only this
Embodiment in order to illustrate and set, the present invention do not make for being surface-treated the quantity of included chemical mechanical grinding step
Any restriction, but should be arranged and be adjusted accordingly according to needs of production.
First, second and third chemical mechanical grinding step 11,12 and 13 correspond respectively to first, second and
Three milling time t1、t2And t3, these milling times can be same or different, and which is not limited by the present invention.
For milling apparatus, ground as shown in Fig. 2, being provided in milling apparatus 100 corresponding to the chemical machinery
Grind multiple grinding units 101~104 of step；These grinding units correspond respectively to multiple chemical mechanical grindings step
Suddenly.
For example, it may be the first grinding unit 102 corresponds to the first chemical mechanical grinding step 11, the second grinding unit 103
Corresponding second chemical mechanical grinding step 12, the corresponding third chemical mechanical grinding step 13 of third grinding unit 104, with right simultaneously
Wafer to be ground in different chemical mechanical grinding steps is ground.Grinding unit 101 at this time does not execute grinding steps,
But for placing wafer to be ground.
When grinding unit 102~104 chemical mechanical grinding step after the completion of, milling apparatus 100 rotates, with it is unified will
The multiple wafer to be ground switches to corresponding next step, that is to say, that makes the corresponding chemical machinery of grinding unit 102
Grinding steps 12, the corresponding chemical mechanical grinding step 13 of grinding unit 103, and walked originally in the last one chemical mechanical grinding
Rapid 13 wafer is then moved out of milling apparatus from grinding unit 104 and enters the rinsing step 20, meanwhile, it is new wait grind
Mill wafer is then moved into the milling apparatus.The wafer to be ground of one batch moves in milling apparatus according to aforesaid way
It is dynamic.
But actual move mode be not limited to it is described above, in the present embodiment with 4 grinding units grinding
For equipment 100, move mode of preceding 4 wafers in the milling apparatus 100 in the wafer of a batch is only " wait grind
Mill wafer is moved in milling apparatus 100 grinding unit for corresponding to the first chemical mechanical grinding step " and it is " multiple to be ground
Wafer switches to corresponding next chemical mechanical grinding step " two kinds, i.e., preceding 4 wafers of a batch are come
It says, there are no wafers to be moved out milling apparatus 100 at this time.
Similarly, when grinding carries out last 4 wafers into a collection of wafer, also only having " will be positioned corresponding to last
Wafer in the grinding unit of chemical mechanical grinding step removes milling apparatus 100 " and " multiple wafers to be ground switch to
Two kinds of move modes of corresponding next chemical mechanical grinding step ", for last 4 wafers of a batch, there is no new
Wafer the step of entering milling apparatus 100.
In addition, above-mentioned, " milling apparatus 100 is rotated, and the wafer in each grinding unit is made to correspond to next chemistry
The meaning of mechanical polishing step " can refer to the motionless situation of rotation, that is, wafer of grinding head itself, can also be for holding
The platform for carrying wafer is rotated, and the situation that grinding head is motionless, and this is not limited by the present invention.
Specifically, making the time of the last one chemical mechanical grinding step in the surface treatment not less than other changes
Learn the time of mechanical polishing step, that is to say, that the milling time t of the third chemical mechanical grinding step 13 in the present embodiment3
It should be not less than any one milling time in the first, second chemical mechanical grinding step 11,12.
By making the time of the last one chemical mechanical grinding step in the surface treatment not less than other chemistry
The time of mechanical polishing step ensure that last wafer in same batch, will not mistake after the surface treatment
Early leave milling apparatus and enter the rinsing step 20, that is to say, that this wafer rinsed in rinsing step 20 when
Between t4Time with the flushing of wafers other in this batch be it is the same, can make this wafer will not prematurely into
Enter rinsing step 20, and then reduces the rinsing step to the etching problem of the wafer.
For example, in the present embodiment, first, second and third chemical mechanical grinding step 11,12 and 13 can be made
Milling time t1、t2And t3It is all the same, chemical mechanical grinding step each in surface treatment is configured with simplification as far as possible
Difficulty and complexity.
Specifically, in the present embodiment, can make first, second and third chemical mechanical grinding step 11,12 and
13 milling time t1、t2And t3In the range of 90~110 seconds, for example, can be 100 seconds.But herein it is only this
An example used by embodiment, specific milling time t1、t2And t3Should be determined according to actual grinding object
, the present invention is not limited in any way this.
It should be noted that in other embodiments of the invention, the grinding of the third chemical mechanical grinding step 13
Time t3It is also possible to be greater than the milling time of the first, second chemical mechanical grinding step 11,12, equally can achieve keep away in this way
Exempt from the purpose that last wafer enters rinsing step 20 too early.
In the present embodiment, the premise for the milling time grown is not needed very much in third chemical mechanical grinding step 13 script
Under, when in order to make grinding of the third chemical mechanical grinding step 13 still with above-mentioned not less than other chemical mechanical grinding steps
Between, it can make to include practical chemical mechanical grinding step and pseudo- chemical mechanical grinding step in third chemical mechanical grinding step 13
Suddenly (dummy process step), wherein practical chemical mechanical grinding step is for removing some materials layer, actually to play
The step of abrasive action, and the effect of pseudo- chemical mechanical grinding step is only to extend entire third chemical mechanical grinding step 13
Total milling time t3, abrasive action is not played to material layer, that is to say, that do not remove the material layer.
Specifically, in the present embodiment, can make third chemical mechanical grinding step 13 grinding unit dally and simultaneously
The material layer on wafer is not contacted, or makes grinding unit pause grinding to realize the pseudo- chemical mechanical grinding step.
In addition, it is an object of the invention to extend the last one grinding steps (i.e. third chemical machinery in the present embodiment
Grinding steps 13) milling time, so suitable between practical chemical mechanical grinding step and pseudo- chemical mechanical grinding step
Sequence can be interchanged, i other words, third chemical mechanical grinding step can be the first practical chemical mechanical grinding step of progress and carry out again
Pseudo- chemical mechanical grinding step, or first carry out pseudo- chemical mechanical grinding step and carry out practical chemical mechanical grinding step again.
It is to be used to form used in metal gates in rear grid technique as material layer in this present embodiment, above-mentioned chemical machinery
Grinding eliminates the material layer positioned at inter-level dielectric layer surface, retains the material layer being located in the opening, and then formed and partly led
The metal gates of body device.
Please continue to refer to Fig. 1 and Fig. 2, in the wafer after the step 10 of the surface treatment, after surface treatment
Rinsing step 20 will be successively serially entered, to be successively rinsed to several wafers Jing Guo the surface treatment, described is rushed
Step 20 is washed for rinsing out grinding residue.
It in the present embodiment,, can will in the prior art in rinsing step 20 due to forming the material layer using aluminium
The deionized water of use replaces with hydrogenperoxide steam generator, such good to be rinsed to the surface treated wafer
Be in is in a kind of, situation, can be directly in surface treated material layer since the oxidisability of hydrogenperoxide steam generator is stronger
Surface form fine and close alumina layer, to protect the material layer of aluminum material；Another situation is that hydrogenperoxide steam generator can make
The surface potential of aluminium in the material layer of aluminum material is got higher, thus be not easy with other chemical bonds, do not allow material layer
Vulnerable to corrosion.
In the present embodiment, hydrogenperoxide steam generator of concentration in the range of 1% to 29% can be used.It needs to illustrate
It is that in the present invention, " concentration " refers to the mass percent of hydrogen peroxide in the solution.
Hydrogenperoxide steam generator positioned at this concentration range plays the material layer to form alumina layer to protect aluminum material enough
And the surface potential of the aluminium in the material layer of aluminum material is set to get higher and be not readily susceptible to corrosiveness, and the mistake of this concentration
Hydrogen peroxide solution is easier to save, and is also relatively easy use.
But the present invention is directed to replace the deionized water used in rinsing step 20 in the prior art, for what is substituted for
Kind of solution and without limitation, in other embodiments of the invention, can also use CP72B solution or CP76 solution to described
Surface treated wafer is rinsed.
Wherein, CP72B solution or CP76 main component in solution are citric acid and inhibitor, after to grinding
Wafer be rinsed；Wafer is rinsed using CP72B solution or CP76 solution to overcome the prior art to use as far as possible
Deionized water defect while, a degree of flushing is carried out to the material surface on wafer.
It further include to after rinsing after rinsing step 20 in the present embodiment please continue to refer to Fig. 1 and Fig. 2
The cleaning step 30 that several wafers are successively cleaned, wherein the cleaning step 30 is used to clean by chemical reagent and remove
Some remaining impurity of material surface.
Since the wafer that cleaning step 30 cleans every time needs certain scavenging period t5, and the number of the wafer cleaned every time
Measure it is limited, so, the rinsing step 20 can also play it is slow between the step 10 of surface treatment and cleaning step 30
The effect of punching.
Specifically, in the present embodiment, the milling time t of the third chemical mechanical grinding step 13 can be made3It is not small
In the time t of the cleaning step5, i other words, so that the time of cleaning step is less than or equal to the third chemical machinery and grinds
Grind the time of step.After entering rinsing step 20 with the wafer in the prior art after surface treatment, before this wafer
Other wafers are still within cleaning step 30, and last wafer is caused to have to stop waiting in rinsing step 20
Situation is compared, and the time by the way that cleaning step is arranged is less than the time of the third chemical mechanical grinding step (that is, to formation
When there are several wafers to be ground of material layer to be successively surface-treated, make last chemical machinery in the surface treatment step
The time of grinding steps is not less than the time of the cleaning step), the wafer after the surface treatment can be avoided as far as possible
Into after rinsing step, other wafers before this wafer are still within cleaning step, and leading to this wafer, there is still a need for rushing
Wash the problem of waiting in step
In the present embodiment, in cleaning step 30, can also using above-mentioned CP72B solution or CP76 solution come after
Material layer on the continuous wafer to by rinsing is cleaned.
Although present disclosure is as above, present invention is not limited to this.Anyone skilled in the art are not departing from this
It in the spirit and scope of invention, can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the range of restriction.
Claims (11)
1. a kind of grinding method, which is characterized in that including：
Several wafers to be ground are provided；
The forming material layer on the wafer to be ground；
Several wafers to be ground for being formed with material layer are successively surface-treated, including：Multiple wafers to be ground are executed
Corresponding chemical mechanical grinding step is completed in multiple corresponding chemical mechanical grinding steps of wafer to be ground
Afterwards, unified that the multiple wafer to be ground is switched into corresponding next step；Make last in the surface treatment
The time of chemical mechanical grinding step is not less than the time of other chemical mechanical grinding steps；
Several wafers Jing Guo the surface treatment are successively rinsed；
Wherein, after being successively rinsed to several wafers Jing Guo the surface treatment, the grinding method further includes：
Several wafers by rinsing successively are cleaned；
The step of being successively surface-treated to several wafers to be ground for being formed with material layer include：Walk the surface treatment
The time of last chemical mechanical grinding step is not less than the time of the cleaning step in rapid；
Wherein, the step of forming material layer includes：Form the material layer of aluminum material；
The step of being successively rinsed to surface treated several wafers include：Using hydrogenperoxide steam generator to by surface
Several wafers of processing are rinsed.
2. grinding method as described in claim 1, which is characterized in that last chemical machinery in the surface treatment is ground
Grinding step includes：
The practical chemical mechanical grinding step of some materials layer is removed, and does not remove the pseudo- chemical mechanical grinding step of material layer
Suddenly.
3. grinding method as described in claim 1, which is characterized in that being formed with several wafers to be ground of material layer successively
The step of being surface-treated include：
Milling apparatus is provided, is provided with the multiple grinding lists for corresponding respectively to each chemical mechanical grinding step in the milling apparatus
Member；The multiple grinding unit is to the wafer to be ground for being respectively at different chemical mechanical grinding steps while grinding；
Several wafers to be ground are sequentially placed in the milling apparatus, to carry out the surface treatment.
4. grinding method as claimed in claim 3, which is characterized in that carried out first in the step of being successively surface-treated
Chemical mechanical grinding step is the first chemical mechanical grinding step；
The step of being successively surface-treated to several wafers to be ground for being formed with material layer include：
The wafer to be ground being located at except milling apparatus is moved in milling apparatus and corresponds to the first chemical mechanical grinding step
Grinding unit, meanwhile, by the grinding unit for being positioned corresponding to last chemical mechanical grinding step wafer to be ground move
Milling apparatus out, the step of to carry out the flushing；
Either, the wafer to be ground being located at except milling apparatus is moved in milling apparatus and is ground corresponding to the first chemical machinery
Grind the grinding unit of step；
Either, the wafer to be ground in the grinding unit for being positioned corresponding to last chemical mechanical grinding step is removed into grinding
Equipment, to carry out the flushing.
5. grinding method as described in claim 1, which is characterized in that being formed with several wafers to be ground of material layer successively
The step of being surface-treated include：
First, second and third chemical mechanical grinding step are successively carried out to wafer, wherein the third chemical mechanical grinding
The milling time of step is not less than the first chemical mechanical grinding step or the milling time of the second chemical mechanical grinding step.
6. grinding method as claimed in claim 5, which is characterized in that being formed with several wafers to be ground of material layer successively
The step of being surface-treated include：Make first, second and third chemical mechanical grinding step milling time it is all the same.
7. grinding method as claimed in claim 6, which is characterized in that being formed with several wafers to be ground of material layer successively
The step of being surface-treated include：Make first, second and third chemical mechanical grinding step milling time be 90~
110 seconds.
8. grinding method as described in claim 1, which is characterized in that successively rushed to surface treated several wafers
The step of washing include：Make in the hydrogenperoxide steam generator concentration of hydrogen peroxide in the range of 1% to 29%.
9. grinding method as described in claim 1, which is characterized in that successively rushed to surface treated several wafers
The step of washing include：The surface treated wafer is rinsed using CP72B solution or CP76 solution.
10. grinding method as described in claim 1, which is characterized in that successively carried out clearly to several wafers after rinsing
The step of washing include：The wafer by rinsing is cleaned using CP72B solution or CP76 solution.
11. grinding method as described in claim 1, which is characterized in that after the step of providing wafer to be ground, form material
Before the step of bed of material, the grinding method further includes：
Interlayer dielectric layer is formed in the crystal column surface to be ground, is formed with several openings in the interlayer dielectric layer；
The step of forming material layer include：The material layer is filled in said opening, and the material layer also covers the interlayer
Dielectric layer surface；
The step of being successively surface-treated to several wafers to be ground for being formed with material layer include：Grind the material layer with
The material layer of inter-level dielectric layer surface is removed, retains the material layer being located in opening, to form grid.
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