CN105553249B - Wide voltage range low voltage stress current injection type three-phase power factor correction circuit - Google Patents

Wide voltage range low voltage stress current injection type three-phase power factor correction circuit Download PDF

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CN105553249B
CN105553249B CN201610001646.0A CN201610001646A CN105553249B CN 105553249 B CN105553249 B CN 105553249B CN 201610001646 A CN201610001646 A CN 201610001646A CN 105553249 B CN105553249 B CN 105553249B
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power
power mosfet
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current
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CN105553249A (en
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林维明
张强
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Fuzhou University
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/42Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208Arrangements for improving power factor of AC input
    • H02M1/4233Arrangements for improving power factor of AC input using a bridge converter comprising active switches
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Rectifiers (AREA)

Abstract

The present invention relates to a kind of wide-voltage range low voltage stress current-injecting three-phase power factor correcting circuits, according to input voltage working range, circuit is operable with boost patterns, is also operable with buck patterns, the voltage stress of switching tube is than directly using typical buck topology(buck‑boost、cuk、sepic、zeta)It is small, there is higher conversion efficiency.The converter of the present invention controls the corresponding phase voltage of current tracking of maximum, the minimum phase of input voltage instantaneous value respectively;According to three-phase symmetrical, in addition a phase current also follows its phase voltage, to realize that three-phase current sineization controls.By operating mode stage by stage, output voltage can rise to drop the circuit, input and output voltage can working range it is big, be suitable for the big application scenario of input and output voltage variation range.The present invention is without complicated vector controlled, as long as using DC/DC PWM control technologies, so that it may to realize three-phase input current positizing string, it is easy to accomplish.

Description

宽电压范围低电压应力电流注入型三相功率因数校正电路Wide voltage range low voltage stress current injection type three-phase power factor correction circuit

技术领域technical field

本发明涉及一种宽电压范围低电压应力电流注入型三相功率因数校正电路。The invention relates to a wide voltage range low voltage stress current injection type three-phase power factor correction circuit.

背景技术Background technique

网侧输入的谐波电流会导致电源系统利用率低、损耗大、影响用电设备的正常工作甚至危及整个电网的稳定运行,谐波治理越来越得到学术界和各国政府的重视,已出台了许多谐波限制标准来规范用电设备的谐波含量。如IEC61000-3-2,GB17625.1等标准,明确规定电子设备的谐波电流限值,只有满足规范要求的电子设备才允许上市。Harmonic current input from the grid side will lead to low utilization of the power system, large losses, affect the normal operation of electrical equipment and even endanger the stable operation of the entire power grid. A number of harmonic limitation standards regulate the harmonic content of electrical equipment. Such as IEC61000-3-2, GB17625.1 and other standards clearly stipulate the harmonic current limit of electronic equipment, and only electronic equipment that meets the requirements of the specification is allowed to be listed.

5千瓦以上功率用电设备通常采用三相供电的大功率用电设备,产生的谐波污染大,PFC技术却没有得到普遍的应用,主要源于三相PFC技术的发展不够成熟,实际应用中系统结构和控制复杂,实现困难。最常见的三相PFC电路结构为PWM整流器,可分为两大类:电压型PWM整流器和电流型PWM整流器。前者为升压型结构,输出直流电压需大于三相输入线电压的峰值,器件电压应力大。对于国内Ull=380V(欧洲400V)工业用电,输出直流电压一般达到700~800V;北美地区的480V(或600V)动力供电,输出电压更高。 电流型PWM整流器为降压型结构,输出电压。近些年出现的VIENNA整流器为升压结构,SWISS整流器为降压结构,目前已知的绝大部分三相PFC电路为单一的升压或降压结构,而部分具有升降压功能的三相PFC电路器件电压应力过大,控制复杂,实际应用困难。在输出电压不在上述范围,或是输入输出电压变化范围大的应用场合,单一的升压或降压功能的电路无法满足要求。The electrical equipment with a power of more than 5 kW usually adopts high-power electrical equipment powered by three phases, which generates large harmonic pollution, but PFC technology has not been widely used, mainly because the development of three-phase PFC technology is not mature enough. The system structure and control are complex and difficult to realize. The most common three-phase PFC circuit structure is a PWM rectifier, which can be divided into two categories: voltage-type PWM rectifier and current-type PWM rectifier. The former is a step-up structure, the output DC voltage must be greater than the peak value of the three-phase input line voltage, and the device voltage stress is large. For domestic Ull=380V (400V in Europe) industrial electricity, the output DC voltage generally reaches 700~800V; 480V (or 600V) power supply in North America, the output voltage is higher. The current-mode PWM rectifier is a step-down structure, and the output voltage . The VIENNA rectifier that appeared in recent years is a step-up structure, and the SWISS rectifier is a step-down structure. Most of the three-phase PFC circuits known at present are a single step-up or step-down structure, and some three-phase PFC circuits with a step-up and step-down function The voltage stress of the PFC circuit device is too large, the control is complicated, and the practical application is difficult. In applications where the output voltage is not within the above range, or where the input and output voltages vary widely, a circuit with a single step-up or step-down function cannot meet the requirements.

发明内容Contents of the invention

有鉴于此,本发明的目的在于提供一种宽电压范围低电压应力电流注入型三相功率因数校正电路,解决了输出电压只能单一的升或降与现有电路器件电压应力过大的问题。In view of this, the object of the present invention is to provide a three-phase power factor correction circuit with a wide voltage range and low voltage stress current injection, which solves the problem that the output voltage can only be raised or lowered in a single way and the voltage stress of existing circuit devices is too large .

为实现上述目的,本发明采用如下技术方案:一种宽电压范围低电压应力电流注入型三相功率因数校正电路,其特征在于:包括三相交流输入电源Uin、三相整流桥DB1、功率MOSFET管S1、功率MOSFET管S2、功率MOSFET管S3、功率MOSFET管S4、二极管D1、二极管D2、二极管D3、谐波电流注入网络、电感L1、电感L2、输出滤波电容Cf及负载;所述谐波电流注入网络包括双向开关Sy1、双向开关Sy2及双向开关Sy3;所述三相交流输入电源Uin的三个输入相电压分别与三相整流桥DB1的三个输入端连接,所述三相交流输入电源Uin的三个输入相电压还分别与双向开关Sy1的一端、双向开关Sy2的一端、双向开关Sy3的一端连接;所述双向开关Sy1的另一端、双向开关Sy2的另一端及双向开关Sy3的另一端相连于注入点Y;所述三相整流桥DB1的正输出端与功率MOSFET管S1的漏极连接,所述三相整流桥DB1的负输出端与功率MOSFET管S2的源极连接;功率MOSFET管S1的源极与二极管D1的阴极及电感L1的一端连接,功率MOSFET管S2的漏极与二极管D2的阳极及电感L2的一端连接;电感L1的另一端与功率MOSFET管S3的漏极及二极管D3的阳极连接,电感L2的另一端与功率MOSFET管S4的源极、输出滤波电容Cf的负极及负载RL的一端连接,二极管D3的阴极与输出滤波电容Cf的正极及负载RL的另一端连接;二极管D1的阳极、二极管D2的阴极、功率MOSFET管S3的源极及功率MOSFET管S4的漏极相连与所述注入点Y。In order to achieve the above object, the present invention adopts the following technical scheme: a wide voltage range low voltage stress current injection type three-phase power factor correction circuit, characterized in that it includes a three-phase AC input power supply Uin, a three-phase rectifier bridge DB1, a power MOSFET Tube S1, power MOSFET tube S2, power MOSFET tube S3, power MOSFET tube S4, diode D1, diode D2, diode D3, harmonic current injection network, inductor L1, inductor L2, output filter capacitor Cf and load; the harmonic The current injection network includes a bidirectional switch Sy1, a bidirectional switch Sy2 and a bidirectional switch Sy3; the three input phase voltages of the three-phase AC input power supply Uin are respectively connected to the three input terminals of the three-phase rectifier bridge DB1, and the three-phase AC input The three input phase voltages of the power supply Uin are also respectively connected with one end of the bidirectional switch Sy1, one end of the bidirectional switch Sy2, and one end of the bidirectional switch Sy3; the other end of the bidirectional switch Sy1, the other end of the bidirectional switch Sy2 and the The other end is connected to the injection point Y; the positive output terminal of the three-phase rectifier bridge DB1 is connected to the drain of the power MOSFET S1, and the negative output terminal of the three-phase rectifier bridge DB1 is connected to the source of the power MOSFET S2; The source of the power MOSFET S1 is connected to the cathode of the diode D1 and one end of the inductor L1, the drain of the power MOSFET S2 is connected to the anode of the diode D2 and one end of the inductor L2; the other end of the inductor L1 is connected to the drain of the power MOSFET S3 pole and the anode of the diode D3, the other end of the inductor L2 is connected to the source of the power MOSFET S4, the negative pole of the output filter capacitor Cf and one end of the load RL, the cathode of the diode D3 is connected to the positive pole of the output filter capacitor Cf and the load RL The other end is connected; the anode of the diode D1, the cathode of the diode D2, the source of the power MOSFET S3 and the drain of the power MOSFET S4 are connected to the injection point Y.

进一步的,所述功率MOSFET管S1及功率MOSFET管S2或为IGBT功率开关管。Further, the power MOSFET S1 and the power MOSFET S2 may be IGBT power switch tubes.

进一步的,所述功率MOSFET管S3及功率MOSFET管S4或为反并联快恢复功率二极管的IGBT功率开关管。Further, the power MOSFET S3 and the power MOSFET S4 are IGBT power switch tubes with anti-parallel fast recovery power diodes.

进一步的,所述二极管D1、二极管D2、二极管D3是快恢复功率二极管。Further, the diode D1, the diode D2, and the diode D3 are fast recovery power diodes.

进一步的,所述双向开关Sy1、双向开关Sy2及双向开关Sy3由两个功率MOSFET管或两个IGBT管反向串联而成。Further, the bidirectional switch Sy1, the bidirectional switch Sy2 and the bidirectional switch Sy3 are formed by two power MOSFETs or two IGBTs in reverse series.

进一步的,所述电感L1及电感L2的工作模式为电感电流连续CCM、电感电流断续DCM或电感电流临界BCM。Further, the working modes of the inductor L1 and the inductor L2 are continuous inductor current CCM, inductor current discontinuous DCM or inductor current critical BCM.

进一步的,所述输出滤波电容Cf为储能电解电容。Further, the output filter capacitor Cf is an energy storage electrolytic capacitor.

本发明与现有技术相比具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:

1、本发明通过分阶段不同电路工作,输出电压可升可降,输入输出电压工作范围大,更适合于输入输出电压变化范围大的应用场合;1. The present invention operates with different circuits in different stages, the output voltage can be raised or lowered, and the input and output voltage has a large working range, which is more suitable for applications with a large input and output voltage variation range;

2、本发明的开关管电压应力小,且任意阶段,只有两个开关管工作在高频状态,开关损耗较小,有利于效率提升;2. The voltage stress of the switching tube of the present invention is small, and at any stage, only two switching tubes work in a high-frequency state, and the switching loss is small, which is conducive to improving efficiency;

3、本发明无需复杂的矢量控制,只要采用DC/DC PWM控制技术,就可以实现三相输入电流正化弦,易于实现。3. The present invention does not require complicated vector control, and can realize sinusoidal sinusoidal input current as long as DC/DC PWM control technology is adopted, which is easy to realize.

附图说明Description of drawings

图1是本发明的具体实施电路图。Fig. 1 is the concrete implementation circuit diagram of the present invention.

图2是本发明的三个双向开关的驱动信号与三相输入电源的时序图。FIG. 2 is a timing diagram of driving signals of three bidirectional switches and three-phase input power of the present invention.

图3是本发明在稳态工作时的电压电流波形图。Fig. 3 is a voltage and current waveform diagram when the present invention works in a steady state.

图4是本发明在区间①,boost工作模式时的等效电路图。Fig. 4 is an equivalent circuit diagram of the present invention in interval ①, boost working mode.

图5是图4的简化电路图。FIG. 5 is a simplified circuit diagram of FIG. 4 .

图6a是本发明在区间①,boost工作模式时阶段1的电流通路图。Fig. 6a is a current path diagram of stage 1 when the present invention is in interval ①, boost working mode.

图6b是本发明在区间①,boost工作模式时阶段2的电流通路图。Fig. 6b is a current path diagram of phase 2 of the present invention in interval ① and boost working mode.

图6c是本发明在区间①,boost工作模式时阶段3的电流通路图。Fig. 6c is a current path diagram of stage 3 of the present invention in interval ①, boost working mode.

图6d是本发明在区间①,boost工作模式时阶段4的电流通路图。Fig. 6d is a current path diagram of stage 4 in the section ① of the present invention, boost working mode.

图7是本发明在区间①,buck工作模式时的等效电路图。Fig. 7 is an equivalent circuit diagram of the present invention in interval ①, buck working mode.

图8是图7的简化电路图。FIG. 8 is a simplified circuit diagram of FIG. 7 .

图9a是本发明在区间①,buck工作模式时阶段1的电流通路图。Fig. 9a is a current path diagram of stage 1 in section ① and buck working mode of the present invention.

图9b是本发明在区间①,buck工作模式时阶段2的电流通路图。Fig. 9b is a current path diagram of phase 2 of the present invention in section ① and buck working mode.

图9c是本发明在区间①,buck工作模式时阶段3的电流通路图。Fig. 9c is a current path diagram of stage 3 in the section ① of the present invention, buck working mode.

图9d是本发明在区间①,buck工作模式时阶段4的电流通路图。Fig. 9d is a current path diagram of stage 4 in the section ① of the present invention, buck working mode.

具体实施方式Detailed ways

下面结合附图及实施例对本发明做进一步说明。The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

请参照图1,本发明提供一种宽电压范围低电压应力电流注入型三相功率因数校正电路,其特征在于:包括三相交流输入电源Uin、三相整流桥DB1、功率MOSFET管S1、功率MOSFET管S2、功率MOSFET管S3、功率MOSFET管S4、二极管D1、二极管D2、二极管D3、谐波电流注入网络、电感L1、电感L2、输出滤波电容Cf及负载;所述谐波电流注入网络包括双向开关Sy1、双向开关Sy2及双向开关Sy3;所述三相交流输入电源Uin的三个输入相电压分别与三相整流桥DB1的三个输入端连接,所述三相交流输入电源Uin的三个输入相电压还分别与双向开关Sy1的一端、双向开关Sy2的一端、双向开关Sy3的一端连接;所述双向开关Sy1的另一端、双向开关Sy2的另一端及双向开关Sy3的另一端相连于注入点Y;所述三相整流桥DB1的正输出端与功率MOSFET管S1的漏极连接,所述三相整流桥DB1的负输出端与功率MOSFET管S2的源极连接;功率MOSFET管S1的源极与二极管D1的阴极及电感L1的一端连接,功率MOSFET管S2的漏极与二极管D2的阳极及电感L2的一端连接;电感L1的另一端与功率MOSFET管S3的漏极及二极管D3的阳极连接,电感L2的另一端与功率MOSFET管S4的源极、输出滤波电容Cf的负极及负载RL的一端连接,二极管D3的阴极与输出滤波电容Cf的正极及负载RL的另一端连接;二极管D1的阳极、二极管D2的阴极、功率MOSFET管S3的源极及功率MOSFET管S4的漏极相连与所述注入点Y。Please refer to Fig. 1, the present invention provides a wide voltage range low voltage stress current injection type three-phase power factor correction circuit, which is characterized in that it includes a three-phase AC input power supply Uin, a three-phase rectifier bridge DB1, a power MOSFET tube S1, a power MOSFET tube S2, power MOSFET tube S3, power MOSFET tube S4, diode D1, diode D2, diode D3, harmonic current injection network, inductor L1, inductor L2, output filter capacitor Cf and load; the harmonic current injection network includes Bidirectional switch Sy1, bidirectional switch Sy2 and bidirectional switch Sy3; the three input phase voltages of the three-phase AC input power supply Uin are respectively connected to the three input terminals of the three-phase rectifier bridge DB1, and the three input terminals of the three-phase AC input power supply Uin Each input phase voltage is also connected with one end of bidirectional switch Sy1, one end of bidirectional switch Sy2, and one end of bidirectional switch Sy3; the other end of described bidirectional switch Sy1, the other end of bidirectional switch Sy2 and the other end of bidirectional switch Sy3 are connected to Injection point Y; the positive output terminal of the three-phase rectifier bridge DB1 is connected to the drain of the power MOSFET S1, and the negative output terminal of the three-phase rectifier bridge DB1 is connected to the source of the power MOSFET S2; the power MOSFET S1 The source of the diode D1 is connected to the cathode of the diode D1 and one end of the inductor L1, the drain of the power MOSFET S2 is connected to the anode of the diode D2 and one end of the inductor L2; the other end of the inductor L1 is connected to the drain of the power MOSFET S3 and the diode D3 The anode of the inductance L2 is connected to the anode, the other end of the inductor L2 is connected to the source of the power MOSFET S4, the negative pole of the output filter capacitor Cf and one end of the load RL, and the cathode of the diode D3 is connected to the positive pole of the output filter capacitor Cf and the other end of the load RL; The anode of the diode D1, the cathode of the diode D2, the source of the power MOSFET S3 and the drain of the power MOSFET S4 are connected to the injection point Y.

图1中功率MOSFET管S1、功率MOSFET管S2、二极管D1、二极管D2,电感L1、电感L2、输出滤波电容Cf构成两个buck电路;功率MOSFET管S3、功率MOSFET管S4、二极管D3,电感L1、电感L2、输出滤波电容Cf构成两个boost电路。In Figure 1, power MOSFET S1, power MOSFET S2, diode D1, diode D2, inductor L1, inductor L2, and output filter capacitor Cf constitute two buck circuits; power MOSFET S3, power MOSFET S4, diode D3, and inductor L1 , inductor L2, and output filter capacitor Cf form two boost circuits.

于本实施例中,所述功率MOSFET管S1及功率MOSFET管S2或为IGBT功率开关管。In this embodiment, the power MOSFET S1 and the power MOSFET S2 may be IGBT power switch tubes.

于本实施例中,所述功率MOSFET管S3及功率MOSFET管S4或为反并联快恢复功率二极管的IGBT功率开关管。In this embodiment, the power MOSFET S3 and the power MOSFET S4 are IGBT power switch tubes with anti-parallel fast recovery power diodes.

于本实施例中,所述二极管D1、二极管D2、二极管D3是快恢复功率二极管。In this embodiment, the diode D1, the diode D2, and the diode D3 are fast recovery power diodes.

于本实施例中,所述双向开关Sy1、双向开关Sy2及双向开关Sy3由两个功率MOSFET管或两个IGBT管反向串联而成。In this embodiment, the bidirectional switch Sy1 , the bidirectional switch Sy2 and the bidirectional switch Sy3 are formed by two power MOSFETs or two IGBTs in reverse series.

于本实施例中,所述电感L1及电感L2的工作模式为电感电流连续CCM、电感电流断续DCM或电感电流临界BCM。In this embodiment, the working modes of the inductors L1 and L2 are continuous inductor current CCM, inductor current discontinuous DCM, or inductor current critical BCM.

于本实施例中,所述输出滤波电容Cf为储能电解电容。In this embodiment, the output filter capacitor Cf is an energy storage electrolytic capacitor.

如图2所示是本发明的谐波电流注入网络的开关管的驱动信号与三相输入电源的时序图。三个双向开关Sy1、Sy2、Sy3的控制信号与三相输入电压瞬时值的关系,注入支路的双向开关工作于两倍电源频率,属于低频工作功率开关管。一个交流电源周期分为6个区间,每一区间为60°,在每一区间里,三相输入电压绝对值最小的那一相对应的双向开关导通。图3为稳态工作时的电压电流波形, u pYu Yn为线电压的分段组合,类似于三角波。下面的分析以区间①为例,分别分析boost模式和buck模式的详细工作过程。此区间c相电压绝对值最小,双向开关Sy3导通,Sy1、Sy2关断。a相电压正的最大, u pN=u aN,b相电压负的最小,u nN=u bN。由此可知u pn=u abu pY=u acu Yn=u cbu pn=u abAs shown in FIG. 2 , it is a time sequence diagram of the driving signal of the switching tube of the harmonic current injection network and the three-phase input power of the present invention. The relationship between the control signals of the three bidirectional switches Sy1, Sy2, and Sy3 and the instantaneous value of the three-phase input voltage, the bidirectional switch injected into the branch works at twice the power supply frequency, and belongs to the low frequency working power switch tube. An AC power cycle is divided into 6 intervals, and each interval is 60°. In each interval, the corresponding bidirectional switch with the smallest absolute value of the three-phase input voltage is turned on. Figure 3 shows the voltage and current waveforms during steady-state operation. u pY and u Yn are segmental combinations of line voltages, similar to triangular waves. The following analysis takes interval ① as an example to analyze the detailed working process of boost mode and buck mode respectively. In this interval, the absolute value of the phase c voltage is the smallest, the bidirectional switch Sy3 is turned on, and Sy1 and Sy2 are turned off. The maximum voltage of phase a is positive, u pN = u aN , and the minimum voltage of phase b is negative, u nN = u bN . From this we can know that u pn = u ab , u pY = u ac , u Yn = u cb , u pn = u ab .

一:boost模式One: boost mode

当三相整流输出电压u pn<U o时,电路工作于boost模式。参照附图4,此时功率MOSFET管S1、S2保持导通,功率MOSFET管S3、S4高频开关工作,简化等效电路如图5所示,箭头表示各状态变量的参考正方向。S3、S4控制信号采用后沿调制,即每一开关周期起始时刻,同时开通。When the three-phase rectified output voltage u pn < U o , the circuit works in boost mode. Referring to Figure 4, power MOSFETs S1 and S2 are kept on at this time, and power MOSFETs S3 and S4 are switched at high frequency. The simplified equivalent circuit is shown in Figure 5, and the arrows indicate the reference positive direction of each state variable. The S3 and S4 control signals are modulated by the trailing edge, that is, they are turned on simultaneously at the beginning of each switching cycle.

(1)S3、S4同时导通,等效电路如图6a。电压u pY=u ac,加在L1上;电压u Yn=u cb,加在L2上;i L1i L2增大。D3反偏,负载RL全部由电容Cf供电。(1) S3 and S4 are turned on at the same time, and the equivalent circuit is shown in Figure 6a. The voltage u pY = u ac is added to L1; the voltage u Yn = u cb is added to L2; i L1 and i L2 increase. D3 is reverse-biased, and the load RL is powered by the capacitor C f .

(2)S3导通、S4关断,等效电路如图6b。S3导通,i L1增大;i L2通过S3(当i L2>i L1时,通过S3寄生二极管)、D3续流放电,在反压(U o-u Yn)作用下减小。(2) S3 is turned on and S4 is turned off, the equivalent circuit is shown in Figure 6b. S3 turns on, i L1 increases; i L2 passes through S3 (when i L2 > i L1 , through S3 parasitic diode), D3 freewheeling discharge, and decreases under the action of back pressure ( U o - u Yn ).

(3)S3关断、S4导通,等效电路如图6c。S4导通,i L2增大;i L1通过S4(当i L1>i L2时,通过S4寄生二极管)、D3续流放电,在反压(U o-u pY)作用下减小。(3) S3 is turned off and S4 is turned on, and the equivalent circuit is shown in Figure 6c. S4 turns on, i L2 increases; i L1 passes through S4 (when i L1 > i L2 , through S4 parasitic diode), D3 freewheeling discharge, and decreases under the action of back pressure ( U o - u pY ).

(4)S3、S4同时关断,等效电路如图6d。实际导通回路分三种情况,a) S3、S4同时关断时刻, i L1>i L2,则i Y<0,S4寄生二极管Ds4导通,i L2u Yn作用下继续增大,i L1在反压(U o-u pY)作用下减小。如果在下一个开关周期到来前i L1=i L2,则S3、S4寄生二极管都不通,i Y=0,i L1i L2一起续流减小。b) S3、S4同时关断时刻, i L1<i L2,则i Y>0,S3寄生二极管Ds3导通,i L1u pY作用下继续增大,i L2在反压(U o-u Yn)作用下减小。如果在下一个开关周期到来前i L1=i L2,则S3、S4寄生二极管都不通,i Y=0,i L1i L2一起续流减小。c) S3、S4同时关断时刻, i L1=i L2,则直接转入S3、S4寄生二极管都不通,i Y=0,i L1i L2一起续流减小的状态。(4) S3 and S4 are turned off at the same time, and the equivalent circuit is shown in Figure 6d. The actual conduction loop is divided into three situations, a) At the moment when S3 and S4 are turned off at the same time, i L1 > i L2 , then i Y <0, S4 parasitic diode Ds4 conducts, and i L2 continues to increase under the action of u Yn , i L1 decreases under backpressure ( U ou pY ). If i L1 = i L2 before the next switching cycle arrives, the parasitic diodes of S3 and S4 are not connected, i Y =0, and the freewheeling flow of i L1 and i L2 decreases together. b) When S3 and S4 are turned off at the same time, i L1 < i L2 , then i Y >0, the parasitic diode Ds3 of S3 is turned on, i L1 continues to increase under the action of u pY , and i L2 is under the back pressure ( U o - u Yn ) decreases under the action. If i L1 = i L2 before the next switching cycle arrives, the parasitic diodes of S3 and S4 are not connected, i Y =0, and the freewheeling flow of i L1 and i L2 decreases together. c) At the moment when S3 and S4 are turned off at the same time, i L1 = i L2 , it will directly transfer to the state where the parasitic diodes of S3 and S4 are not connected, i Y =0, and the freewheeling current of i L1 and i L2 decreases together.

功率MOSFET管S3导通时,电感L1的电流i L1增大; S3关断时,i L1减小;通过控制S3的通断可以控制电感L1的电流iL1,此时电感L1的电流为a相电流,i p=ia=i L1。因此,可以通过控制功率MOSFET管S3的通断使i a跟踪a相电压u a。同理,可以通过控制功率MOSFET管S4的通断使i b跟踪b相电压u bi n=i b=-i L2。根据Y点的节点电流方程,c相电流i c=i Y= i L2- i L1=-( i a+ i b),三相对称时,如果i ai b跟踪各自的相电压u au b,则i c也跟踪相电压u c,从而实现三相输入电流跟踪三相输入电压。可以看出,功率MOSFET管S3、S4电压应力为输出电压U oWhen the power MOSFET S3 is turned on, the current i L1 of the inductor L1 increases; when S3 is turned off, the i L1 decreases; the current i L1 of the inductor L1 can be controlled by controlling the on and off of the S3, and the current of the inductor L1 is a Phase current, i p = i a = i L1 . Therefore, it is possible to make i a track the a-phase voltage u a by controlling the on-off of the power MOSFET tube S3. In the same way, i b can track the b-phase voltage u b by controlling the on-off of the power MOSFET S4, i n = i b =- i L2 . According to the node current equation at point Y, c-phase current i c = i Y = i L2 - i L1 =-( i a + i b ), when the three phases are symmetrical, if i a and i b track their respective phase voltage u a , ub , then ic also tracks the phase voltage uc , so that the three-phase input current tracks the three -phase input voltage. It can be seen that the voltage stress of power MOSFET tubes S3 and S4 is the output voltage U o .

二:buck模式Two: buck mode

当三相整流输出电压u pn>U o时,电路工作于buck模式。参照附图7,此时功率MOSFET管S3、S4保持关断,功率MOSFET管S1、S2高频开关工作,简化等效电路如图8所示,箭头表示各状态变量的参考正方向,由于L1、L2始终串联,所以i L1=i L2=i L。S1、S2控制信号采用后沿调制,即每一开关周期起始时刻,同时开通。When the three-phase rectified output voltage u pn > U o , the circuit works in buck mode. Referring to accompanying drawing 7, power MOSFET tube S3, S4 keeps turning off at this moment, power MOSFET tube S1, S2 high-frequency switching operation, simplified equivalent circuit is shown in Figure 8, and the arrow indicates the reference positive direction of each state variable, because L1 , L2 are always connected in series, so i L1 = i L2 = i L . The S1 and S2 control signals are modulated by the trailing edge, that is, they are turned on simultaneously at the beginning of each switching cycle.

(1)S1、S2同时导通,电流通路如图9a。电压(u pn-U o)加在L1、L2上,i L上升,同时向储能电容C f、负载RL供电。(1) S1 and S2 are turned on at the same time, and the current path is shown in Figure 9a. The voltage ( u pn - U o ) is applied to L1 and L2, i L rises, and supplies power to the energy storage capacitor C f and the load RL at the same time.

(2)S1导通、S2关断,电流通路如图9b。如果u pY> U o,则i L增大;否则,i L减小。(2) S1 is turned on, S2 is turned off, and the current path is shown in Figure 9b. If u pY > U o , then i L increases; otherwise, i L decreases.

(3)S1关断、S2导通,电流通路如图9c。如果u nY>U o,则i L增大;否则,i L减小。(3) S1 is turned off, S2 is turned on, and the current path is shown in Figure 9c. If u nY > U o , then i L increases; otherwise, i L decreases.

(4)S1、S2同时关断,电流通路如图9d。反压U o加在L1、L2上,i L续流减小。(4) S1 and S2 are turned off at the same time, and the current path is shown in Figure 9d. The back pressure U o is added to L1 and L2, and the freewheeling flow of i L decreases.

功率MOSFET管S1导通时,功率MOSFET管S1电流i S1= i L; S1关断时,i S1=0;通过控制S1的通断可以控制S1电流i S1,此时i S1=i p=i a,因此可以通过控制功率MOSFET管S1的通断使i a跟踪a相电压u a。同理,可以通过控制功率MOSFET管S2的通断使i b跟踪b相电压u b,-i S2=i n=i b。根据Y点的节点电流方程,i c=i Y= i S2- i S1=-(i a+ i b),三相对称时,如果i ai b跟踪各自的相电压u au b,则i c也跟踪相电压u c,从而实现三相输入电流跟踪三相输入电压。功率MOSFET管S1、S2电压应力为三相整流输出电压u pn的最大值。When the power MOSFET S1 is turned on, the power MOSFET S1 current i S1 = i L ; when S1 is turned off, i S1 =0; the S1 current i S1 can be controlled by controlling the on and off of S1 , at this time i S1 = i p = i a , so it is possible to make i a track the a-phase voltage u a by controlling the on-off of the power MOSFET S1. In the same way, i b can track the b-phase voltage u b by controlling the on-off of the power MOSFET S2, - i S2 = i n = i b . According to the node current equation at point Y, i c = i Y = i S2 - i S1 =-( i a + i b ), when the three phases are symmetrical, if i a and i b track their respective phase voltages u a and u b , then ic also tracks the phase voltage uc , so that the three-phase input current tracks the three-phase input voltage. The voltage stress of power MOSFET tubes S1 and S2 is the maximum value of the three-phase rectified output voltage u pn .

其它区间的工作情况与区间①的工作状态类似,从一个完整的电源周期看,三相输入电流跟踪三相输入电压。从图3可以看出,i p跟踪三相整流桥正输出端与电源中性线之间的电压u pNi n 跟踪三相整流桥负输出端与电源中性线之间的电压u nNi Y为三倍电源频率的近似三角波。The working conditions of other intervals are similar to the working state of interval ①. From a complete power cycle, the three-phase input current tracks the three-phase input voltage. It can be seen from Figure 3 that ip tracks the voltage u pN between the positive output terminal of the three-phase rectifier bridge and the neutral line of the power supply, and in tracks the voltage u nN between the negative output terminal of the three-phase rectifier bridge and the neutral line of the power supply , i Y is an approximate triangular wave of three times the power supply frequency.

以上所述仅为本发明的较佳实施例,凡依本发明申请专利范围所做的均等变化与修饰,皆应属本发明的涵盖范围。The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the scope of the patent application of the present invention shall fall within the scope of the present invention.

Claims (7)

1. a kind of wide-voltage range low voltage stress current-injecting three-phase power factor correcting circuit, it is characterised in that:Including Three-phase alternating current input power Uin, three-phase commutation bridge DB1, power MOSFET tube S1, power MOSFET tube S2, power MOSFET tube S3, power MOSFET tube S4, diode D1, diode D2, diode D3, harmonic current injection network, inductance L1, inductance L2, Output filter capacitor Cf and load;The harmonic current injection network includes two-way switch Sy1, two-way switch Sy2 and two-way opened Close Sy3;Three of three-phase alternating current input power Uin input phase voltages respectively with three input terminals of three-phase commutation bridge DB1 Connection, three of three-phase alternating current input power Uin input phase voltages also respectively with one end of two-way switch Sy1, two-way opened Close one end of Sy2, one end connection of two-way switch Sy3;The other end of the two-way switch Sy1, the other end of two-way switch Sy2 And the other end of two-way switch Sy3 is connected in decanting point Y;The positive output end and power MOSFET tube of the three-phase commutation bridge DB1 The drain electrode of S1 connects, and the negative output terminal of the three-phase commutation bridge DB1 is connect with the source electrode of power MOSFET tube S2;Power MOSFET The source electrode of pipe S1 is connect with one end of the cathode of diode D1 and inductance L1, and the drain electrode of power MOSFET tube S2 is with diode D2's One end of anode and inductance L2 connect;The other end of inductance L1 connects with the anode of the drain electrode of power MOSFET tube S3 and diode D3 It connects, the other end of inductance L2 and one end of the source electrode of power MOSFET tube S4, the cathode of output filter capacitor Cf and load RL connect It connects, the cathode of diode D3 is connect with the other end of the anode of output filter capacitor Cf and load RL;The anode of diode D1, two The drain electrode of the cathode of pole pipe D2, the source electrode of power MOSFET tube S3 and power MOSFET tube S4 is connected in the decanting point Y.
2. wide-voltage range low voltage stress current-injecting three-phase power factor correcting circuit according to claim 1, It is characterized in that:The power MOSFET tube S1 and power MOSFET tube S2 is IGBT power switch tubes.
3. wide-voltage range low voltage stress current-injecting three-phase power factor correcting circuit according to claim 1, It is characterized in that:The power MOSFET tube S3 and power MOSFET tube S4 or to restore power diode soon with inverse parallel IGBT power switch tubes.
4. wide-voltage range low voltage stress current-injecting three-phase power factor correcting circuit according to claim 1, It is characterized in that:The diode D1, diode D2, diode D3 are fast recovery power diodes.
5. wide-voltage range low voltage stress current-injecting three-phase power factor correcting circuit according to claim 1, It is characterized in that:The two-way switch Sy1, two-way switch Sy2 and two-way switch Sy3 are by two power MOSFET tubes or two IGBT pipe differential concatenations form.
6. wide-voltage range low voltage stress current-injecting three-phase power factor correcting circuit according to claim 1, It is characterized in that:The operating mode of the inductance L1 and inductance L2 is continuous current mode CCM, discontinuous current mode DCM or electricity The critical BCM of inducing current.
7. wide-voltage range low voltage stress current-injecting three-phase power factor correcting circuit according to claim 1, It is characterized in that:The output filter capacitor Cf is energy storage electrolytic capacitor.
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