CN105552199A - 一种全角度发光的led光源及其制备方法 - Google Patents

一种全角度发光的led光源及其制备方法 Download PDF

Info

Publication number
CN105552199A
CN105552199A CN201610086224.8A CN201610086224A CN105552199A CN 105552199 A CN105552199 A CN 105552199A CN 201610086224 A CN201610086224 A CN 201610086224A CN 105552199 A CN105552199 A CN 105552199A
Authority
CN
China
Prior art keywords
light source
led light
chip
planar body
wavelength conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610086224.8A
Other languages
English (en)
Other versions
CN105552199B (zh
Inventor
吴燎炎
孔振中
董晓军
严建平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHEJIANG SHUANGYU ELECTRONIC TECHNOLOGY Co Ltd
Original Assignee
ZHEJIANG SHUANGYU ELECTRONIC TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZHEJIANG SHUANGYU ELECTRONIC TECHNOLOGY Co Ltd filed Critical ZHEJIANG SHUANGYU ELECTRONIC TECHNOLOGY Co Ltd
Priority to CN201610086224.8A priority Critical patent/CN105552199B/zh
Publication of CN105552199A publication Critical patent/CN105552199A/zh
Application granted granted Critical
Publication of CN105552199B publication Critical patent/CN105552199B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0041Processes relating to semiconductor body packages relating to wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Device Packages (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)

Abstract

本发明公开了一种全角度发光的LED光源及其制备方法,包括支架、芯片以及波长转换层,所述支架包括平面主体与两个引脚,所述芯片固设在平面主体的上端面并通过键合线与两个引脚相连,所述平面主体上方覆盖有波长转换层,从而使芯片封装在波长转换层内,所述两个引脚分别与电源的正、负极连接。取消了反射杯,将芯片固定在平面主体上,大大改善了光的激发角度,可以将光的发射角度提高到250°左右;并且解决了覆盖在芯片上波长转换层体积小厚度薄所造成的光圈一致性差、色温偏差等现象,提高了光圈的一致性,不但消除了阴影,而且色温更均匀。

Description

一种全角度发光的LED光源及其制备方法
技术领域
本发明涉及一种LED光源及其制备方法。
背景技术
LED发光的核心部分是由P型和N型半导体构成的PN结管芯,当注入PN结的少数载流子与多数载流子复合时,就发出可见光、紫外线或近红外光。但PN结区发射光子是非定向的,即每个方向发射有相同的概率,然而并不是管芯产生的所有光都可以释放出来,这主要取决于半导体材料的质量,管芯的结构、几何形状,封装内部结构以及包封材料。
目前LED发光光源包括发光二极管芯片1’,发光二极管芯片位于反射杯2’中,反射杯固设在支架3’上,发光二极管芯片通过键合线4’与支架上的两个引脚5’相连,发光二极管芯片、反射杯以及部分支架外包覆有波长转换层6’,两个引脚下端穿出波长转换层,如图1所示。这种LED发光光源受到支架、反射杯以及模条角度的影响,从而使其发光角度在130°以下,光线扩散角度有限,光线达不到背部,并会形成暗影。另外还由于反射杯大小的影响,覆盖在发光二级管芯片上的波长转换层的厚度较薄,体积较小,在生产过程中,比较容易出现沉降、分散不均匀等现象,进一步导致光圈的一致性差,色温偏差等现象。
发明内容
为了解决上述现有技术的不足,本发明的第一目的是提供一种全角度发光的LED光源,不但可以提高光线的扩散角度,还可以提高光圈的一致性,色温更均匀。
为了实现上述目的,本发明所设计的一种全角度发光的LED光源,包括支架、芯片以及波长转换层,所述支架包括平面主体与两个引脚,所述芯片固设在平面主体的上端面并通过键合线与两个引脚相连,所述平面主体上方覆盖有波长转换层,从而使芯片封装在波长转换层内,所述两个引脚分别与电源的正、负极连接。
进一步,所述波长转换层下方设有支撑层,所述平面主体部分封装在支撑层内。
进一步,所述支撑层为不含荧光粉的胶体。
进一步,还包括一透明保护层,包覆在平面主体、部分引脚以及波长转换层的外侧,所述两个引脚下端穿出透明保护层。
进一步,所述透明保护层为透明硅胶保护层、透明硅树脂保护层或透明环氧树脂保护层。
进一步,所述波长转换层与平面主体相接触一端的长度大于平面主体的长度。
进一步,所述支撑层的长度大于平面主体的长度。
本发明的第二目的是提供一种全角度发光的LED光源的制备方法,包括以下步骤:
(1)、将芯片通过绝缘胶的粘合烘烤固定在支架的平面主体上端面上;
(2)、用键合线通过超声波焊线机把芯片的正负极分别与支架的正负引脚相连;
(3)、在真空条件下,将荧光粉、扩散粉以及胶体搅拌混合均匀得到浆料,将该浆料通过自动灌胶机灌封到灌封模条内,直至灌封模条内的浆料出现上下分层,上层为不含荧光粉的浆料,下层为含有荧光粉的浆料;
(4)、将步骤(2)中的支架插到步骤(3)中的模条内,支架平面主体上端与芯片浸在下层浆料内,支架的平面主体部分浸在上层浆料内;
(5)、烘烤固化,脱模;
(6)、将步骤(5)中的LED光源置于填充有透明保护层材料溶液的模具中,然后烘烤固化脱模;
(7)、将步骤(6)中的LED光源再进行烘烤。
其中,所述步骤(5)、(6)中的固化温度均为100-130℃,固化时间均为1h,所述步骤(7)中的烘烤温度为130℃,烘烤时间为8h。
所述透明保护层材料溶液为硅胶溶液、硅树脂溶液或者环氧树脂溶液。
本发明得到的一种全角度发光的LED光源及其制备方法,其技术效果是:1、取消了反射杯,并将芯片固定在平面主体上,大大改善了光的激发角度,可以将光的发射角度提高到250°左右,从而可以实现全角度发光;2、解决了覆盖在芯片上波长转换层体积小厚度薄所造成的光圈一致性差、色温偏差等现象,提高了光圈的一致性,不但消除了阴影,而且色温更均匀;3、由于波长转换层没有包覆在芯片背面,即不会产生由于光线照射不到无法激发荧光粉所造成的色斑,光圈一致性更好;4、增加了放光效率,提高了光通量。
附图说明
图1是现有技术中的LED光源结构示意图。
图2是本发明中的LED光源结构示意图。
具体实施方式
下面结合附图和实施例对本发明进一步说明。
如图2所示,本发明提供的全角度发光的LED光源,包括支架1、芯片2以及波长转换层3,所述支架包括平面主体11与两个引脚12,所述芯片固设在平面主体的上端面并通过键合线4与两个引脚相连,所述平面主体上方覆盖有波长转换层3,从而使芯片封装在波长转换层内,所述两个引脚分别与电源的正、负极连接。
本实施例中,LED光源产生的是白光,因此采用的是蓝光LED芯片。当然,也可以采用其他颜色光的LED芯片,并且最终的LED光源也可以是其他颜色的光源。
由于取消了反射杯,并将芯片固设在平面主体上端面上,大大改善了光的激发角度,经过大量的理论模拟以及实际检测,光的发射角度可以提高到250°左右,从而实现全角度发光;并且没有反射杯的存在,可以使覆盖在芯片上的波长转换层的厚度达到一定厚度,体积也足够大,从而消除了阴影,且色温也更均匀。
为了更有效的扩大光的激发角度,所述波长转换层与平面主体相接触一端的长度大于平面主体的长度。
为了对波长转换层进行支撑,保持一定的强度,所述波长转换层下方设有支撑层5,所述平面主体部分封装在支撑层内。本实施例中,所述支撑层为不含荧光粉的胶体,即为透明的胶体。采用含有荧光粉的胶体制备支撑层,由于支撑层位于芯片背部,无法对支撑层内的荧光粉进行激发,会导致光圈产生色斑,光圈的一致性差,而采用不含荧光粉的胶体,就不会产生色斑的问题,光圈的一致性好。
为了更好的对波长转换层的支撑,支承层的长度可以大于等于波长转换层与平面主体相接触一端的长度,当然,所述支撑层的长度大于平面主体的长度。
还包括一透明保护层6,包覆在平面主体11、部分引脚以及波长转换层3的外侧,所述两个引脚下端穿出透明保护层。所述透明保护层为透明硅胶保护层、透明硅树脂保护层或透明环氧树脂保护层。本实施例中,透明保护层为透明环氧树脂保护层。
上述全角度发光的LED光源通过以下步骤制得,其具体的制备步骤为:
(1)、将芯片通过绝缘胶的粘合烘烤固定在支架的平面主体上端面上;
(2)、用键合线通过超声波焊线机把芯片的正负极分别与支架的正负引脚相连;
(3)、在真空条件下,将荧光粉、扩散粉以及胶体搅拌混合均匀得到浆料,将该浆料通过自动灌胶机灌封到灌封模条内,直至灌封模条内的浆料出现上下分层,上层为不含荧光粉的浆料,下层为含有荧光粉的浆料;
(4)、将步骤(2)中的支架插到步骤(3)中的模条内,支架平面主体上端与芯片浸在下层浆料内,支架的平面主体部分浸在上层浆料内,由于LED芯片具有一定的厚度,为了更好的发挥LED光源的全角度发光,支架的平面主体上端两侧部分位于下层浆料内,且位于下层浆料内的支架平面主体的厚度与芯片的厚度相关,即芯片发出的光线可以照射到范围均位于含有荧光粉的浆料内;
(5)、烘烤固化,脱模,其中固化温度为100-130℃,固化时间均为1h;
(6)、将步骤(5)中的LED光源置于填充有透明保护层材料溶液的模具中,然后烘烤固化脱模,其中固化温度为100-130℃,固化时间均为1h;;
(7)、将步骤(6)中的LED光源在130℃下烘烤8h。
通过上述制备方法制得的LED光源,其发射角度可以提高到250°左右,且光圈的一致性好,无阴影,色温更均匀。

Claims (10)

1.一种全角度发光的LED光源,包括支架、芯片以及波长转换层,其特征在于:所述支架包括平面主体与两个引脚,所述芯片固设在平面主体的上端面并通过键合线与两个引脚相连,所述平面主体上方覆盖有波长转换层,从而使芯片封装在波长转换层内,所述两个引脚分别与电源的正、负极连接。
2.根据权利要求1所述的全角度发光的LED光源,其特征在于:所述波长转换层下方设有支撑层,所述平面主体部分封装在支撑层内。
3.根据权利要求2所述的全角度发光的LED光源,其特征在于:所述支撑层为不含荧光粉的胶体。
4.根据权利要求1-3任一所述的全角度发光的LED光源,其特征在于:还包括一透明保护层,包覆在平面主体、部分引脚以及波长转换层的外侧,所述两个引脚下端穿出透明保护层。
5.根据权利要求4所述的全角度发光的LED光源,其特征在于:所述透明保护层为透明硅胶保护层、透明硅树脂保护层或透明环氧树脂保护层。
6.根据权利要求1所述的E全角度发光的LD光源,其特征在于:所述波长转换层与平面主体相接触一端的长度大于平面主体的长度。
7.根据权利要求2所述的全角度发光的LED光源,其特征在于:所述支撑层的长度大于平面主体的长度。
8.一种全角度发光的LED光源的制备方法,其特征在于,包括以下步骤:
(1)、将芯片通过绝缘胶的粘合烘烤固定在支架的平面主体上端面上;
(2)、用键合线通过超声波焊线机把芯片的正负极分别与支架的正负引脚相连:
(3)、在真空条件下,将荧光粉、扩散粉以及胶体搅拌混合均匀得到浆料,将该浆料通过自动灌胶机灌封到灌封模条内,直至灌封模条内的浆料出现上下分层,上层为不含荧光粉的浆料,下层为含有荧光粉的浆料;
(4)、将步骤(2)中的支架插到步骤(3)中的模条内,支架平面主体上端与芯片浸在下层浆料内,支架的平面主体部分浸在上层浆料内;
(5)、烘烤固化,脱模;
(6)、将步骤(5)中的LED光源置于填充有透明保护层材料溶液的模具中,然后烘烤固化脱模;
(7)、将步骤(6)中的LED光源再进行烘烤。
9.根据权利要求8所述的全角度发光的LED光源的制备方法,其特征在于:所述步骤(5)、(6)中的固化温度均为100-130℃,固化时间均为1h,所述步骤(7)中的烘烤温度为130℃,烘烤时间为8h。
10.根据权利要求8或9所述的全角度发光的LED光源的制备方法,其特征在于:所述透明保护层材料溶液为硅胶溶液、硅树脂溶液或者环氧树脂溶液。
CN201610086224.8A 2016-02-01 2016-02-01 一种全角度发光的led光源及其制备方法 Active CN105552199B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610086224.8A CN105552199B (zh) 2016-02-01 2016-02-01 一种全角度发光的led光源及其制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610086224.8A CN105552199B (zh) 2016-02-01 2016-02-01 一种全角度发光的led光源及其制备方法

Publications (2)

Publication Number Publication Date
CN105552199A true CN105552199A (zh) 2016-05-04
CN105552199B CN105552199B (zh) 2018-11-02

Family

ID=55831274

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610086224.8A Active CN105552199B (zh) 2016-02-01 2016-02-01 一种全角度发光的led光源及其制备方法

Country Status (1)

Country Link
CN (1) CN105552199B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826455A (zh) * 2016-05-20 2016-08-03 中山市厚源电子科技有限公司 一种led驱动芯片保护装置及该装置的使用方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060038198A1 (en) * 2004-08-23 2006-02-23 Chua Janet B Y Device and method for producing output light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material
CN101510579A (zh) * 2008-02-13 2009-08-19 财团法人工业技术研究院 发光元件及其制作方法
CN104124327A (zh) * 2013-04-26 2014-10-29 展晶科技(深圳)有限公司 发光二极管封装结构
CN105392230A (zh) * 2015-12-01 2016-03-09 浙江华坚照明科技股份有限公司 一种发光光谱可调的led灯
CN205385041U (zh) * 2016-02-01 2016-07-13 浙江双宇电子科技有限公司 一种全角度发光的led光源

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060038198A1 (en) * 2004-08-23 2006-02-23 Chua Janet B Y Device and method for producing output light having a wavelength spectrum in the visible range and the infrared range using a fluorescent material
CN101510579A (zh) * 2008-02-13 2009-08-19 财团法人工业技术研究院 发光元件及其制作方法
CN104124327A (zh) * 2013-04-26 2014-10-29 展晶科技(深圳)有限公司 发光二极管封装结构
CN105392230A (zh) * 2015-12-01 2016-03-09 浙江华坚照明科技股份有限公司 一种发光光谱可调的led灯
CN205385041U (zh) * 2016-02-01 2016-07-13 浙江双宇电子科技有限公司 一种全角度发光的led光源

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105826455A (zh) * 2016-05-20 2016-08-03 中山市厚源电子科技有限公司 一种led驱动芯片保护装置及该装置的使用方法

Also Published As

Publication number Publication date
CN105552199B (zh) 2018-11-02

Similar Documents

Publication Publication Date Title
CN106384775B (zh) 一种led倒装结构
CN101876406A (zh) 一种大功率led灯的制作工艺
TW201320406A (zh) 提升混光效果之白光二極體封裝改良結構
WO2009140829A1 (zh) 一种低衰减高光效led照明装置及制备方法
CN102097549B (zh) 一种芯片级集成封装工艺及led器件
CN105633248B (zh) 一种led灯及其制备方法
CN105826453A (zh) 一种cob光模组的制备方法和cob光模组
CN205282504U (zh) 一种贴片式白光led封装体
CN205863219U (zh) 一种多管芯的led封装
CN105552199A (zh) 一种全角度发光的led光源及其制备方法
CN205385041U (zh) 一种全角度发光的led光源
WO2011029219A1 (zh) Led晶片固定支架立体发光的led光源以及封装方法
CN104253199A (zh) 一种led封装结构及其制作方法
CN102709412A (zh) 高亮度及低衰减的led发光二极管的制造方法
CN105047796B (zh) 一种全周光led光源及其制备方法
CN101877375A (zh) 一种高显色性白光led
CN205231108U (zh) 一种白光led晶片封装结构
CN106025047A (zh) 一种led的封装及其封装方法
CN206040693U (zh) 蓝色发光二极体晶片白光封装装置
CN105336835A (zh) 一种led封装结构及其封装方法
CN205159358U (zh) 一种led封装结构
CN105428502A (zh) 一种白光led晶片封装结构及封装方法
CN205828428U (zh) 一种led封装
WO2007076670A1 (fr) Procede de fabrication d'une diode electroluminescente blanche a faible attenuation
CN110767792A (zh) 一种cob光源及其制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant