CN105552029B - Led芯片切割方法 - Google Patents
Led芯片切割方法 Download PDFInfo
- Publication number
- CN105552029B CN105552029B CN201510939718.1A CN201510939718A CN105552029B CN 105552029 B CN105552029 B CN 105552029B CN 201510939718 A CN201510939718 A CN 201510939718A CN 105552029 B CN105552029 B CN 105552029B
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- CN
- China
- Prior art keywords
- led chip
- carried out
- scribing
- laser
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000005520 cutting process Methods 0.000 title claims abstract description 18
- 238000012545 processing Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003698 laser cutting Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 206010020843 Hyperthermia Diseases 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010257 thawing Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510939718.1A CN105552029B (zh) | 2015-12-16 | 2015-12-16 | Led芯片切割方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510939718.1A CN105552029B (zh) | 2015-12-16 | 2015-12-16 | Led芯片切割方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105552029A CN105552029A (zh) | 2016-05-04 |
CN105552029B true CN105552029B (zh) | 2018-05-25 |
Family
ID=55831131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510939718.1A Active CN105552029B (zh) | 2015-12-16 | 2015-12-16 | Led芯片切割方法 |
Country Status (1)
Country | Link |
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CN (1) | CN105552029B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106784174B (zh) * | 2016-11-28 | 2019-03-08 | 华灿光电(浙江)有限公司 | 一种led芯片及其制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752922A (en) * | 1984-07-06 | 1988-06-21 | Storage Technology Partners 11 | Optical disk recording and readout system having read, write and coarse light beams |
CN1351529A (zh) * | 1999-05-28 | 2002-05-29 | 电子科学工业公司 | 采用固态紫外高斯激光束成孔的波束成形和投射成像 |
CN1716544A (zh) * | 2004-06-14 | 2006-01-04 | 株式会社迪斯科 | 晶片处理方法 |
CN1761549A (zh) * | 2003-02-19 | 2006-04-19 | J.P.瑟塞尔联合公司 | 利用可变像散聚焦光斑切割的系统和方法 |
CN104681674A (zh) * | 2015-03-10 | 2015-06-03 | 江苏新广联半导体有限公司 | GaN基高压直流LED绝缘隔离工艺 |
-
2015
- 2015-12-16 CN CN201510939718.1A patent/CN105552029B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4752922A (en) * | 1984-07-06 | 1988-06-21 | Storage Technology Partners 11 | Optical disk recording and readout system having read, write and coarse light beams |
CN1351529A (zh) * | 1999-05-28 | 2002-05-29 | 电子科学工业公司 | 采用固态紫外高斯激光束成孔的波束成形和投射成像 |
CN1761549A (zh) * | 2003-02-19 | 2006-04-19 | J.P.瑟塞尔联合公司 | 利用可变像散聚焦光斑切割的系统和方法 |
CN1716544A (zh) * | 2004-06-14 | 2006-01-04 | 株式会社迪斯科 | 晶片处理方法 |
CN104681674A (zh) * | 2015-03-10 | 2015-06-03 | 江苏新广联半导体有限公司 | GaN基高压直流LED绝缘隔离工艺 |
Also Published As
Publication number | Publication date |
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CN105552029A (zh) | 2016-05-04 |
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Effective date of registration: 20180428 Address after: 312500 81 Liquan village, Qixing street, Xinchang, Shaoxing, Zhejiang Applicant after: Xinchang Hongji Electronic Technology Co., Ltd. Address before: 266600 Qingdao Road, Laixi City, Qingdao, Shandong Province, No. 138 Applicant before: Wang Yongyan |
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Effective date of registration: 20190924 Address after: 314000 Floor 1, Building No. 18, East Century Road, Huimin Street, Jiashan County, Jiaxing City, Zhejiang Province Patentee after: Zhejiang Hanguang Display Technology Co., Ltd. Address before: 312500 Xinchang City, Shaoxing province Qixing street, Liquan village, No. 81, No. Patentee before: Xinchang Hongji Electronic Technology Co., Ltd. |
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Effective date of registration: 20200713 Address after: 361000 Room 501, No.85, Xiaguang Dongli, Haicang District, Xiamen City, Fujian Province Patentee after: Xiamen Jiupin sesame Information Technology Co.,Ltd. Address before: 314000 Floor 1, Building No. 18, East Century Road, Huimin Street, Jiashan County, Jiaxing City, Zhejiang Province Patentee before: Zhejiang Hanguang Display Technology Co.,Ltd. |
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Effective date of registration: 20220610 Address after: 518000 Room 201, building A, No. 1, Qian Wan Road, Qianhai Shenzhen Hong Kong cooperation zone, Shenzhen, Guangdong (Shenzhen Qianhai business secretary Co., Ltd.) Patentee after: JINGXIU CULTURE TECHNOLOGY (SHENZHEN) Co.,Ltd. Address before: Room 501, 85 Xiaguang Dongli, Haicang District, Xiamen City, Fujian Province Patentee before: Xiamen Jiupin sesame Information Technology Co.,Ltd. |
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