CN105552023A - Method for improving deposition selectivity of cobalt barrier layer - Google Patents
Method for improving deposition selectivity of cobalt barrier layer Download PDFInfo
- Publication number
- CN105552023A CN105552023A CN201610107414.3A CN201610107414A CN105552023A CN 105552023 A CN105552023 A CN 105552023A CN 201610107414 A CN201610107414 A CN 201610107414A CN 105552023 A CN105552023 A CN 105552023A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cobalt
- deposition
- optionally method
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a method for improving deposition selectivity of a cobalt barrier layer, comprising following steps: providing a wafer, wherein a metal copper wire and porous low dielectric constant media are distributed on the surface of the wafer; carrying out chemical and mechanical polishing to the metal copper wire; carrying out surface densification treatment to the wafer by an HMDS gas, enabling the HMDS to react with the porous low dielectric constant media, thus forming a densified thin layer on the surface of the porous low dielectric constant media; carrying out gas blowing to the wafer; removing the oxide layer on the surface of the metal copper wire; and carrying out Co deposition to the wafer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of raising cobalt barrier deposition optionally method.
Background technology
Along with the development of CMOS integrated circuit fabrication process and reducing of critical size, much new materials and process is applied in device fabrication, in order to improve device performance.Replace aluminum steel with copper cash in integrated circuit last part technology flow process, significantly reduce interconnection resistance.Meanwhile, adopt porous low dielectric constant material (low-K material) that the dielectric constant of less than 2.5 can be realized.The RC that these technology effectively can both reduce integrated circuit postpones.
Because copper-base easily spreads, after back segment Cu layer cmp, first can deposit one deck copper diffusion barrier layer, and then carry out the deposition of follow-up porous low dielectric constant material layer, spread in advanced low-k materials to avoid copper.At more than 28nm technology node, this one deck copper diffusion barrier layer adopts nitrogen doped silicon carbide (NDC, dielectric constant is about 5.3) film usually, as schematically shown in Figure 1.And arrived below 28nm technology node, the cobalt membrane diffusion barrier layer grown in CVD mode will be introduced, as schematically shown in Figure 2.Why need cobalt diffusion impervious layer to be because cobalt better can not only stop the diffusion of copper, also can prevent the water vapor permeable in production process in air from entering layers of copper simultaneously.The introducing of cobalt film means can the thickness of thinning nitrogen doped silicon carbide (NDC) film, and this is conducive to reducing overall effectively k value.In addition, cobalt and copper have good adhesion, greatly can improve the reliability of product, such as electromigration characteristic.
Cobalt film is surperficial at Cu by the growth of the way selection of CVD.According to the difference of dielectric substrate and growth conditions, generally speaking, deposition Selection radio (on Cu layer cobalt thickness/porous low dielectric constant on the thickness of cobalt) between tens to hundreds of.Growth thickness difference is obvious on different substrates for CVD cobalt; Under substrate is 250 DEG C of conditions, the deposition Selection radio in compact medium layer and layers of copper is close to 150:1, and the deposition Selection radio in porous medium layer and layers of copper only has 10-15.
The deposition of cobalt on dielectric layer is larger, means that the leakage current between copper cash is larger, even if so wish on porous medium layer, the deposition of cobalt is also as far as possible little, namely deposits Selection radio as far as possible large.
Summary of the invention
Technical problem to be solved by this invention is for there is above-mentioned defect in prior art, provides a kind of selectivity that can improve the growth of cobalt film, reduces the deposition of areas of dielectric metallic cobalt, reduce device creepage, improve the method for product yield and reliability.
In order to realize above-mentioned technical purpose, according to the present invention, providing a kind of raising cobalt barrier deposition optionally method, comprising:
First step: provide surface to be furnished with the wafer of copper lines and porous low-k dielectric;
Second step: cmp is carried out to copper lines;
Third step: adopt HMDS gas to carry out surface densification process to wafer, HMDS and porous low-k dielectric surface are reacted, forms densification thin layer on porous low-k dielectric surface thus;
4th step: gas purging is carried out to wafer;
5th step: the oxide layer removing copper lines surface;
6th step: Co deposition is performed to wafer.
Preferably, described raising cobalt barrier deposition optionally method be used for copper interconnection technology.
Preferably, the surface densification process of wafer is performed in chemical vapour deposition film reaction chamber.
Preferably, in the surface densification process of wafer, the temperature of wafer is made to be 100-400C.
Preferably, in the surface densification process of wafer, select inert gas as the carrier gas of HMDS.
Preferably, inert gas is N
2gas.
Preferably, inert gas is He gas.
Preferably, the Co of the deposition in copper lines defines the cobalt membrane diffusion barrier layer of copper.
By the technical method that the present invention proposes, the deposition of areas of dielectric metallic cobalt can be reduced, reduce device creepage, improve product yield and reliability.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily there is more complete understanding to the present invention and more easily understand its adjoint advantage and feature, wherein:
Fig. 1 schematically shows the structural representation of copper interconnection technology.
Fig. 2 schematically shows the copper interconnection technology structural representation introducing cobalt membrane diffusion barrier layer.
Fig. 3 schematically shows the flow chart improving cobalt barrier deposition optionally method according to the preferred embodiment of the invention.
Fig. 4 and Fig. 5 schematically shows the several steps improving cobalt barrier deposition optionally method according to the preferred embodiment of the invention.
It should be noted that, accompanying drawing is for illustration of the present invention, and unrestricted the present invention.Note, represent that the accompanying drawing of structure may not be draw in proportion.Further, in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention clearly with understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
The present invention proposes a kind of raising cobalt barrier deposition optionally method, surface is provided to be furnished with the wafer of copper lines and porous low-k dielectric, first HMDS (hmds) gas is used to show process to wafer, HMDS and porous low-k dielectric surface react and make it form the thin layer of densification, then carry out selectivity cobalt film and grow up.By the technical method that the present invention proposes, the selectivity of cobalt film growth can be improved, reduce the deposition of areas of dielectric metallic cobalt, reduce device creepage, improve product yield and reliability.
Particularly, Fig. 3 schematically shows the flow chart improving cobalt barrier deposition optionally method according to the preferred embodiment of the invention.Described raising cobalt barrier deposition optionally method can be advantageously used in copper interconnection technology.
As shown in Figure 3, improve according to the preferred embodiment of the invention cobalt barrier deposition optionally method comprise:
First step S1: provide surface to be furnished with the wafer of copper lines and porous low-k dielectric, as shown in Figure 4;
Second step S2: cmp is carried out to copper lines;
Third step S3: adopt HMDS (hmds) gas to carry out surface densification process to wafer, HMDS and porous low-k dielectric surface are reacted, densification thin layer is formed thus, as shown in Figure 5 on porous low-k dielectric surface;
Preferably, chemical vapour deposition film reaction chamber can be selected to the surface densification process of wafer.And preferably, in the surface densification process of wafer, make the temperature of wafer be 100-400C.Preferably, in the surface densification process of wafer, select inert gas (such as N2, He) as the carrier gas of HMDS.HMDS reacts with the Si-OH of porous low-k dielectric material surface after crystal column surface on earth, forms the low dielectric constant films surface of densification, i.e. densification thin layer.
4th step S4: gas purging wafer being carried out to large discharge; Object drives away the responseless HMDS in porous low-k dielectric surface.
5th step S5: the oxide layer removing copper lines surface;
6th step S6: Co deposition is performed to wafer.Wherein, the Co of the deposition in copper lines defines cobalt membrane diffusion barrier layer.
Now, Co deposit thickness is on different substrates different, and the Co of the dielectric material surface deposition of wherein densification will be less, and that is the Selection radio of Co deposition improves.Thus, the technical method proposed by the present invention, can reduce the deposition of areas of dielectric metallic cobalt, reduces device creepage, improves product yield and reliability.
Be understandable that, although the present invention with preferred embodiment disclose as above, but above-described embodiment and be not used to limit the present invention.For any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the technology contents of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (8)
1. improve a cobalt barrier deposition optionally method, it is characterized in that comprising:
First step: provide surface to be furnished with the wafer of copper lines and porous low-k dielectric;
Second step: cmp is carried out to copper lines;
Third step: adopt HMDS gas to carry out surface densification process to wafer, HMDS and porous low-k dielectric surface are reacted, forms densification thin layer on porous low-k dielectric surface thus;
4th step: gas purging is carried out to wafer;
5th step: the oxide layer removing copper lines surface;
6th step: Co deposition is performed to wafer.
2. raising cobalt barrier deposition according to claim 1 optionally method, is characterized in that, described raising cobalt barrier deposition optionally method is used for copper interconnection technology.
3. raising cobalt barrier deposition according to claim 1 and 2 optionally method, is characterized in that, perform the surface densification process of wafer in chemical vapour deposition film reaction chamber.
4. raising cobalt barrier deposition according to claim 1 and 2 optionally method, is characterized in that, in the surface densification process of wafer, makes the temperature of wafer be 100-400C.
5. raising cobalt barrier deposition according to claim 1 and 2 optionally method, is characterized in that, in the surface densification process of wafer, selects inert gas as the carrier gas of HMDS.
6. raising cobalt barrier deposition according to claim 5 optionally method, it is characterized in that, inert gas is N
2gas.
7. raising cobalt barrier deposition according to claim 5 optionally method, it is characterized in that, inert gas is He gas.
8. raising cobalt barrier deposition according to claim 1 and 2 optionally method, is characterized in that, the Co of the deposition in copper lines defines the cobalt membrane diffusion barrier layer of copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610107414.3A CN105552023A (en) | 2016-02-26 | 2016-02-26 | Method for improving deposition selectivity of cobalt barrier layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610107414.3A CN105552023A (en) | 2016-02-26 | 2016-02-26 | Method for improving deposition selectivity of cobalt barrier layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105552023A true CN105552023A (en) | 2016-05-04 |
Family
ID=55831125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610107414.3A Pending CN105552023A (en) | 2016-02-26 | 2016-02-26 | Method for improving deposition selectivity of cobalt barrier layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105552023A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340488A (en) * | 2016-11-30 | 2017-01-18 | 上海华力微电子有限公司 | Preparation method of copper interconnection structure |
| CN110610897A (en) * | 2018-06-15 | 2019-12-24 | 北京北方华创微电子装备有限公司 | Manufacturing process of diffusion barrier layer in copper interconnection structure and copper interconnection structure |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050233586A1 (en) * | 2004-04-20 | 2005-10-20 | Matz Phillip D | Method to reduce silanol and improve barrier properties in low K dielectric IC interconnects |
| US20060105566A1 (en) * | 2004-11-12 | 2006-05-18 | Carlo Waldfried | Ultraviolet assisted pore sealing of porous low k dielectric films |
| US20100164123A1 (en) * | 2008-12-31 | 2010-07-01 | Tobias Letz | Local silicidation of via bottoms in metallization systems of semiconductor devices |
| CN102148190A (en) * | 2010-02-09 | 2011-08-10 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor interconnection structure |
| CN104152863A (en) * | 2014-08-27 | 2014-11-19 | 上海华力微电子有限公司 | A method for increasing deposition selectivity of a cobalt barrier layer |
| CN104752338A (en) * | 2013-12-31 | 2015-07-01 | 台湾积体电路制造股份有限公司 | Interconnect Structure For Semiconductor Devices |
| CN104795358A (en) * | 2015-04-13 | 2015-07-22 | 上海华力微电子有限公司 | Formation method and metal interconnection process of cobalt barrier layer |
-
2016
- 2016-02-26 CN CN201610107414.3A patent/CN105552023A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050233586A1 (en) * | 2004-04-20 | 2005-10-20 | Matz Phillip D | Method to reduce silanol and improve barrier properties in low K dielectric IC interconnects |
| US20060105566A1 (en) * | 2004-11-12 | 2006-05-18 | Carlo Waldfried | Ultraviolet assisted pore sealing of porous low k dielectric films |
| US20100164123A1 (en) * | 2008-12-31 | 2010-07-01 | Tobias Letz | Local silicidation of via bottoms in metallization systems of semiconductor devices |
| CN102148190A (en) * | 2010-02-09 | 2011-08-10 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor interconnection structure |
| CN104752338A (en) * | 2013-12-31 | 2015-07-01 | 台湾积体电路制造股份有限公司 | Interconnect Structure For Semiconductor Devices |
| CN104152863A (en) * | 2014-08-27 | 2014-11-19 | 上海华力微电子有限公司 | A method for increasing deposition selectivity of a cobalt barrier layer |
| CN104795358A (en) * | 2015-04-13 | 2015-07-22 | 上海华力微电子有限公司 | Formation method and metal interconnection process of cobalt barrier layer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106340488A (en) * | 2016-11-30 | 2017-01-18 | 上海华力微电子有限公司 | Preparation method of copper interconnection structure |
| CN110610897A (en) * | 2018-06-15 | 2019-12-24 | 北京北方华创微电子装备有限公司 | Manufacturing process of diffusion barrier layer in copper interconnection structure and copper interconnection structure |
| CN110610897B (en) * | 2018-06-15 | 2022-02-22 | 北京北方华创微电子装备有限公司 | Manufacturing process of diffusion barrier layer in copper interconnection structure and copper interconnection structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102484303B1 (en) | Methods for wordline separation in 3d-nand devcies | |
| US6464779B1 (en) | Copper atomic layer chemical vapor desposition | |
| US9528183B2 (en) | Cobalt removal for chamber clean or pre-clean process | |
| JP5487748B2 (en) | Barrier layer, film forming method and processing system | |
| US11232955B2 (en) | Methods of etching metal oxides with less etch residue | |
| US6365518B1 (en) | Method of processing a substrate in a processing chamber | |
| KR101358114B1 (en) | Method for forming manganese oxide film, method for manufacturing semiconductor device, and semiconductor device | |
| TW202109872A (en) | Methods for forming structures with desired crystallinity for mram applications | |
| JP2010021447A (en) | Film forming method, and processing system | |
| JP2001244263A (en) | Formation method for aluminum oxide film and manufacturing method for semiconductor element using it | |
| EP3933892A1 (en) | Dry etching method, method for manufacturing semiconductor device, and etching device | |
| JP6467239B2 (en) | Ruthenium film forming method, film forming apparatus, and semiconductor device manufacturing method | |
| JP2009043973A (en) | Manufacturing method of semiconductor device, treatment device of semiconductor substrate, and storage medium | |
| CN105552023A (en) | Method for improving deposition selectivity of cobalt barrier layer | |
| US20090275211A1 (en) | Fabrication method of porous low-k dielectric film | |
| CN104795358A (en) | Formation method and metal interconnection process of cobalt barrier layer | |
| CN100477119C (en) | Film forming method, semiconductor device manufacturing method, semiconductor device and film forming device | |
| US10854511B2 (en) | Methods of lowering wordline resistance | |
| CN104152863B (en) | A method of it improving cobalt barrier deposition and selects ratio | |
| KR102118580B1 (en) | Chemical vapor deposition (cvd) of ruthenium films and applications for same | |
| CN100407402C (en) | Method of manufacturing inner interconnection wires | |
| CN101996929B (en) | Forming method of dual-damascene structure and semiconductor structure | |
| JP5864668B2 (en) | Method for forming silicon film on object to be processed having concave portion | |
| CN107910253B (en) | Polyimide and passivation layer mask combination method | |
| US7037823B2 (en) | Method to reduce silanol and improve barrier properties in low k dielectric ic interconnects |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160504 |
|
| RJ01 | Rejection of invention patent application after publication |