CN104152863A - A method for increasing deposition selectivity of a cobalt barrier layer - Google Patents
A method for increasing deposition selectivity of a cobalt barrier layer Download PDFInfo
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- CN104152863A CN104152863A CN201410427394.9A CN201410427394A CN104152863A CN 104152863 A CN104152863 A CN 104152863A CN 201410427394 A CN201410427394 A CN 201410427394A CN 104152863 A CN104152863 A CN 104152863A
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Abstract
The invention discloses a method for increasing deposition selectivity of a cobalt barrier layer, the method being used for making a copper-diffusion barrier layer in a subsequent process of an integrated circuit. The method comprises: first adopting a direct photo CVD process, selectively depositing a layer of silicon dioxide in holes in the surface layer of a porous low k dielectric layer to densify the surface layer of the porous low k dielectric layer, thereby obviously preventing deposition of cobalt on the surface of the porous low k dielectric layer, and further improving the deposition selectivity of cobalt during subsequent deposition of cobalt barrier layer. Accordingly, the method can reduce the deposition amount of cobalt on the porous low k dielectric layer and efficiently decrease leakage current among copper wires in the subsequent process flow of an integrated circuit.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology field, more specifically, relate to the method for a kind of raising as the deposition selection ratio of the cobalt film of copper diffusion barrier layer.
Background technology
Along with the development of CMOS integrated circuit fabrication process and dwindling of critical size, a lot of new material and process quilts apply in device fabrication, in order to improve device performance.For example, in integrated circuit last part technology flow process, replace aluminum steel with copper cash, greatly reduced interconnected resistance; Meanwhile, adopt porous lowk (low-k) material can realize the specific inductivity below 2.5.The RC that these technology can both effectively reduce unicircuit postpones.
Because copper-base easily spreads, therefore,, can first deposit layer of copper diffusion impervious layer, and then carry out the deposition of follow-up porous low k medium layer, to avoid copper to spread in low k material through after cmp at back segment copper interconnecting line.
At the above technology node of 28nm, this one deck copper diffusion barrier layer adopts nitrogen doped silicon carbide (NDC, k is about 5.3) film conventionally.Please refer to Fig. 1, Fig. 1 is the application schematic diagram of NDC film as copper diffusion barrier layer.As shown in the figure, in the porous low k of lower floor medium layer 1 in wafer substrate (diagram wafer omits), be furnished with copper interconnecting line 5, isolated with tantalum (Ta) or tantalum nitride (TaN) blocking layer 6 between the low k material at copper vias wall place and copper, prevent that copper from spreading in low k material.On copper interconnecting line 5, deposit one deck NDC layer 2, as copper diffusion barrier layer, and then on NDC layer 2 film, carry out the deposition of follow-up upper strata porous low k medium layer 3, to avoid copper to spread in the low k material of upper strata.
And arrived the following technology node of 28nm, will introduce the cobalt film diffusion impervious layer of growing in CVD mode.Please refer to Fig. 2, Fig. 2 is the application schematic diagram of cobalt diffusion impervious layer.As shown in the figure, before deposition NDC layer 2, first above copper interconnecting line 5, locate to deposit one deck cobalt blocking layer 4 as the first layer copper diffusion barrier layer, and then continuation deposition is thereon as the NDC layer 2 of second layer copper diffusion barrier layer, afterwards, then on NDC layer 2 film, carry out the deposition of follow-up upper strata porous low k medium layer 3.Why adopting cobalt diffusion impervious layer, is because cobalt not only can stop the diffusion of copper better, also can prevent that in production process, airborne water vapor permeable enters copper layer simultaneously.
The introducing on cobalt blocking layer means thickness that can attenuate nitrogen doped silicon carbide (NDC) film, and this is conducive to reduce effectively k value of entirety.In addition, cobalt and copper have good adhesion, can greatly improve the reliability of product.
But by CVD technique, cobalt film is that to be grown in Cu (copper) film in mode optionally lip-deep, cobalt is different with the lip-deep deposit thickness of porous low k medium layer on Cu surface.According to the height of porous low k medium layer specific inductivity and the difference of growth conditions, generally speaking, deposition is selected than (on Cu layer on thickness/porous low k medium layer of cobalt the thickness of cobalt) more than ten, be cobalt the lip-deep deposit thickness of Cu be the lip-deep deposit thickness of porous low k medium layer more than ten times (as shown in Figure 2, cobalt film at copper vias place shows thicker thickness, and on the porous low k medium layer surface between through hole not shown cobalt film, less to be illustrated in the deposition of cobalt herein).The deposition of cobalt on medium layer is larger, means that the leakage current between copper cash is larger.So we wish that the deposition of cobalt is as far as possible little on porous low k medium layer, deposition is selected larger than as far as possible.Therefore, how can reduce the deposition of cobalt on porous low k medium layer, to effectively reduce the leakage current between copper cash in integrated circuit last part technology flow process, become an important topic of current industry.
Summary of the invention
The object of the invention is to overcome the above-mentioned defect that prior art exists, a kind of method that improves cobalt barrier deposition selection ratio is provided, for the making of integrated circuit last part technology copper diffusion barrier layer, by first adopting direct optical cvd technique, selectivity deposition layer of silicon dioxide in the hole on porous low k medium layer top layer, make the top layer densification of porous low k medium layer, thereby greatly stop the deposition of cobalt on porous low k medium layer surface, while further having improved subsequent deposition cobalt blocking layer, the deposition of cobalt is selected ratio, therefore, can reduce the deposition of cobalt on porous low k medium layer, effectively reduce the leakage current between copper cash in integrated circuit last part technology flow process.
For achieving the above object, technical scheme of the present invention is as follows:
Improve cobalt barrier deposition and select a method for ratio, for the making of integrated circuit last part technology copper diffusion barrier layer, it is characterized in that, comprise the following steps:
Step 1 a: wafer is provided, and described crystal column surface has porous low k medium layer, and described porous low k medium layer is furnished with copper interconnecting line, and through planarization;
Step 2: adopt direct optical cvd technique, selectivity deposition layer of silicon dioxide in the hole on described porous low k medium layer top layer, the top layer of the described porous low k medium layer of formation densification;
Step 3: described crystal column surface is cleaned;
Step 4: adopt CVD technique selectivity deposit cobalt blocking layer on described porous low k medium layer, to form copper diffusion barrier layer on described copper interconnecting line.
In technique scheme, the present invention has utilized cobalt to select in the deposition on densification low k dielectric material surface the characteristic of selecting ratio in the deposition on porous low k dielectric material surface than being much higher than, by adopting direct optical cvd technique, selectivity deposition layer of silicon dioxide in the hole on porous low k medium layer top layer, so that the top layer densification of porous low k medium layer, and do not change the loose porous feature of porous low k medium layer.Therefore, adopt technique means of the present invention, can not have a negative impact to device, but can greatly improve the deposition of cobalt and select ratio.
Preferably, in step 2, in the time carrying out described direct optical cvd technique, the temperature of described porous low k medium layer is 200～400 DEG C.
Preferably, in step 2, in the time carrying out described direct optical cvd technique, reactant gases is SiH
4and N
2o.
Preferably, in step 2, in the time carrying out described direct optical cvd technique, ultraviolet light wavelength is 175～195nm.
Preferably, in step 2, the number of times that carries out described direct optical cvd technique is 1 to repeatedly.
Further preferred, in step 2, the number of times that carries out described direct optical cvd technique is 1 to 3 time.
Preferred, in step 2, the number of times that carries out described direct optical cvd technique is 2 times.
Preferably, in step 4, while adopting CVD process deposits cobalt blocking layer, the temperature of described porous low k medium layer is remained on and is not less than 250 DEG C.
Can find out from technique scheme, the present invention utilizes cobalt to select in the deposition on densification low k dielectric material surface the characteristic of selecting ratio in the deposition on porous low k dielectric material surface than being much higher than, by first adopting direct optical cvd technique, selectivity deposition layer of silicon dioxide in the hole on porous low k medium layer top layer, make the top layer densification of porous low k medium layer, and do not change the loose porous feature of porous low k medium layer, thereby greatly stop the deposition of cobalt on porous low k medium layer surface, while further having improved subsequent deposition cobalt blocking layer, the deposition of cobalt is selected ratio, therefore, can reduce the deposition of cobalt on porous low k medium layer, effectively reduce the leakage current between copper cash in integrated circuit last part technology flow process.
Brief description of the drawings
Fig. 1 is the application schematic diagram of NDC film as copper diffusion barrier layer;
Fig. 2 is the application schematic diagram of cobalt diffusion impervious layer;
Fig. 3 is the schema of a kind of method that improves cobalt barrier deposition selection ratio of the present invention;
Fig. 4～Fig. 8 is the device architecture schematic diagram of making cobalt blocking layer in one embodiment of the invention according to the method for Fig. 3.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.Certainly the present invention is not limited to following specific embodiment, and the known general replacement of those skilled in the art is also encompassed in protection scope of the present invention.
It should be noted that, in following embodiment, utilize the schematic diagram of Fig. 4～Fig. 8 to carry out detailed statement to the device architecture of selecting the method for ratio to form by raising cobalt barrier deposition of the present invention.In the time that embodiments of the present invention are described in detail in detail, for convenience of explanation, each schematic diagram is not according to general scale and carried out local amplification and omission processing, therefore, should avoid using this as limitation of the invention.
Refer to Fig. 3, Fig. 3 is the schema of a kind of method that improves cobalt barrier deposition selection ratio of the present invention.Meanwhile, ask control reference Fig. 4～Fig. 8, Fig. 4～Fig. 8 is the device architecture schematic diagram of making cobalt blocking layer in one embodiment of the invention according to the method for Fig. 3.The device architecture of illustrating in Fig. 4～Fig. 8, corresponding with the each making step in Fig. 3 respectively, so that the understanding to the inventive method.
As shown in Figure 3, the invention provides a kind of method that improves cobalt barrier deposition selection ratio, for the making of integrated circuit last part technology copper diffusion barrier layer, comprise the following steps:
As shown in frame 1, a wafer is provided, described crystal column surface has porous low k medium layer, and described porous low k medium layer is furnished with copper interconnecting line, and through planarization.
Please refer to Fig. 4, in integrated circuit last part technology flow process, in wafer substrate, (diagram wafer omits, descend same) go up the porous low k of the lower floor medium layer 1 depositing (for to compare with the structure of prior art in Fig. 1,2, same structure place has been adopted to identical numerical markings, down together), be furnished with copper interconnecting line 5, and through cmp planarization.Isolated with tantalum (Ta) or tantalum nitride (TaN) blocking layer 6 between the low k material at the through-hole wall place of copper interconnecting line 5 and deposited copper, prevent that copper from spreading in low k material.
As shown in frame 2, step 2: adopt direct optical cvd technique, selectivity deposition layer of silicon dioxide in the hole on described porous low k medium layer top layer, the top layer of the described porous low k medium layer of formation densification.
Please refer to Fig. 5, the wafer that deposits the porous low k of lower floor medium layer 1 in above-mentioned steps one is put into direct optical cvd silicon oxide deposition reaction chamber, adopt direct optical cvd technique (Photo-induced Chemical Vapor Deposition, Photo-CVD), object is the porous low k of the lower floor medium layer 1 surface deposition silicon-dioxide to wafer.When deposition, adopt SiH
4and N
2o is as reactant gases.Also to make substrate remain in certain temperature range, namely need to make the porous low k of lower floor medium layer 1 to remain on 200～400 DEG C, be beneficial to the generation of deposition reaction.
In deposition process, first pass into SiH
4(silane) gas.SiH
4molecule less (<1nm), and the pore diameter of general porous low k material is 1～2nm left and right.Therefore, silane molecule is entered the hole of the porous low k of lower floor medium layer 1, and is attracted to the top layer (this is the adsorptivity characteristic of porous material) of the porous low k of lower floor medium layer 1.Then pass into N
2o gas, meanwhile, opens low pressure mercury lamp, under the effect of the UV-light that is 175～195nm at the wavelength producing (or using other can produce the fluorescent tube of this wave band UV-light), makes N
2o dissociates, and silicyl oxide, thereby forms silicon-dioxide.That is to say, by by the silane oxidation being attracted in lower floor's porous low k medium layer 1 top layer, in the hole on lower floor's porous low k medium layer 1 top layer, filled silicon-dioxide.
In the hole of porous low k material, form the silicon-dioxide of having filled, mean that the top layer of porous medium film is by densification.And on the copper surface of copper interconnecting line 5, because silane molecule can not be adsorbed, so can not form silica deposit.Therefore,, after direct optical cvd technique, the top layer of the porous lowk of lower floor medium layer 1 will form the silica-filled layer 7 of densification.
In the link on densification lower floor porous low k medium layer 1 top layer, the number of times that carries out direct optical cvd technique can be 1 to repeatedly, by increasing the cycle index of this technique, and adjusting process parameter, can further increase the adsorption deeply of silane molecule in the porous low k of lower floor medium layer 1, and improve the degree of densification.Experiment shows, when directly the multiplicity of optical cvd technique exceedes 3 times, very little to the percentage contribution of the porous low k of lower floor medium layer 1 top layer densification, therefore, carries out the number of times taking 1 to 3 time of direct optical cvd technique as good.In fact, carry out the number of times of direct optical cvd technique in the time of 2 times, the hole on lower floor's porous low k medium layer 1 top layer is just filled substantially, therefore, considers from cost of manufacture, the best number of times that carries out direct optical cvd technique can be defined as 2 times.
As shown in frame 3, step 3: described crystal column surface is cleaned.
After direct optical cvd technique, can generate oxide compound on the copper surface of copper interconnecting line 5.Therefore, must clean crystal column surface, by cleaning the oxide compound to remove copper surface, be beneficial to follow-up on copper surface deposition cobalt blocking layer.
As shown in frame 4, step 4: adopt CVD technique selectivity deposit cobalt blocking layer on described porous low k medium layer, to form copper diffusion barrier layer on described copper interconnecting line.
Please refer to Fig. 6, adopt CVD technique, selectivity deposit cobalt blocking layer 8 on the porous low k of lower floor medium layer 1 is (for showing that now the deposition of cobalt selects ratio from of the prior art different, mode of deposition changes, therefore by cobalt of the present invention numerical markings " 8 " expression for blocking layer, with with Fig. 2 in the cobalt blocking layer 4 of prior art distinguish mutually), cobalt will be selected than preferential deposition on copper interconnecting line 5, to form copper diffusion barrier layer on copper interconnecting line 5 according to deposition.
Afterwards, please refer to Fig. 7 and Fig. 8, because copper-base easily spreads, therefore, after back segment copper interconnecting line process cmp, for avoiding copper to spread in low k material, need first deposited copper diffusion impervious layer, and then carry out the deposition of follow-up upper strata porous low k medium layer.With the example that is applied as of technology node below 28nm, first, using cobalt blocking layer 8 as the first layer copper diffusion barrier layer, on cobalt blocking layer 8, continue deposition NDC layer 2, as second layer copper diffusion barrier layer, finally, then on NDC layer 2 film, carry out the deposition of follow-up upper strata porous low k medium layer 3.
According to data, CVD cobalt growth thickness obvious difference on substrate in the time of different dielectric substrate and growth conditions.Be under 250 DEG C of conditions at substrate, select than approaching 150:1 in copper layer and the deposition on compact medium layer, and copper layer is selected than only having 10～15 (in the prior art with the deposition on porous low k medium layer, cobalt directly deposits on porous low k medium layer, therefore deposition is selected than only having 10～15, means that the leakage current between copper cash is relatively large).Therefore, in the time carrying out the deposition on cobalt blocking layer 8, the temperature of the porous low k of lower floor medium layer can be remained on to the state that is not less than 250 DEG C, be beneficial to cobalt and select ratio with the large deposition that approaches 150:1 on the surface of copper interconnecting line 5 and the top layer of the porous low k of lower floor medium layer 1, preferentially form cobalt blocking layer 8 at the surface deposition of copper interconnecting line 5.
Realization of the present invention, has utilized cobalt to select to select than the deposition far above on porous low k dielectric material surface the characteristic of ratio in the deposition on densification dielectric material surface exactly.Because the deposition of cobalt is carried out on dielectric material surface, therefore, if adopt certain technique means, change the loose porous surface topography of porous low k dielectric material, so that its densification, change the surface topography of densification dielectric material into, just can realize cobalt and select than more preferentially depositing on copper with the large deposition that exceedes 100 times.
Therefore the present invention is by adopting direct optical cvd technique, selectivity deposition layer of silicon dioxide in the hole on porous low k medium layer top layer, make the top layer of porous low k medium layer become densification, and do not change the loose porous feature of porous low k medium layer.Therefore, adopt technique means of the present invention, can not have a negative impact to device, but can greatly improve the deposition of cobalt and select ratio.Thereby the present invention can stop the deposition of cobalt on porous low k medium layer surface greatly, therefore can reduce the deposition of cobalt on porous low k medium layer, effectively reduce the leakage current between copper cash in integrated circuit last part technology flow process.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification sheets of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (8)
1. improve cobalt barrier deposition and select a method for ratio, for the making of integrated circuit last part technology copper diffusion barrier layer, it is characterized in that, comprise the following steps:
Step 1 a: wafer is provided, and described crystal column surface has porous low k medium layer, and described porous low k medium layer is furnished with copper interconnecting line, and through planarization;
Step 2: adopt direct optical cvd technique, selectivity deposition layer of silicon dioxide in the hole on described porous low k medium layer top layer, the top layer of the described porous low k medium layer of formation densification;
Step 3: described crystal column surface is cleaned;
Step 4: adopt CVD technique selectivity deposit cobalt blocking layer on described porous low k medium layer, to form copper diffusion barrier layer on described copper interconnecting line.
2. raising cobalt barrier deposition according to claim 1 is selected the method for ratio, it is characterized in that, in step 2, in the time carrying out described direct optical cvd technique, the temperature of described porous low k medium layer is 200～400 DEG C.
3. raising cobalt barrier deposition according to claim 1 is selected the method for ratio, it is characterized in that, in step 2, in the time carrying out described direct optical cvd technique, reactant gases is SiH
4and N
2o.
4. raising cobalt barrier deposition according to claim 1 is selected the method for ratio, it is characterized in that, in step 2, in the time carrying out described direct optical cvd technique, ultraviolet light wavelength is 175～195nm.
5. the method for selecting ratio according to raising cobalt barrier deposition described in claim 1～4 any one, is characterized in that, in step 2, the number of times that carries out described direct optical cvd technique is 1 to repeatedly.
6. raising cobalt barrier deposition according to claim 5 is selected the method for ratio, it is characterized in that, in step 2, the number of times that carries out described direct optical cvd technique is 1 to 3 time.
7. raising cobalt barrier deposition according to claim 6 is selected the method for ratio, it is characterized in that, in step 2, the number of times that carries out described direct optical cvd technique is 2 times.
8. raising cobalt barrier deposition according to claim 1 is selected the method for ratio, it is characterized in that, in step 4, while adopting CVD process deposits cobalt blocking layer, the temperature of described porous low k medium layer is remained on and is not less than 250 DEG C.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795358A (en) * | 2015-04-13 | 2015-07-22 | 上海华力微电子有限公司 | Formation method and metal interconnection process of cobalt barrier layer |
| CN105552023A (en) * | 2016-02-26 | 2016-05-04 | 上海华力微电子有限公司 | Method for improving deposition selectivity of cobalt barrier layer |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1055014A (en) * | 1990-03-17 | 1991-10-02 | 西安电子科技大学 | Low temperature photochemistry vapor deposition silicon-dioxide, silicon nitride film technology |
| CN101124351A (en) * | 2005-03-18 | 2008-02-13 | 布鲁尔科技公司 | Deposition of polymeric materials and precursors therefor |
| CN101416277A (en) * | 2003-10-10 | 2009-04-22 | 东京毅力科创株式会社 | Method and system for treating a dielectric film |
| CN101443894A (en) * | 2005-11-23 | 2009-05-27 | 德克萨斯仪器股份有限公司 | Integration of pore sealing liner into dual-damascene methods and devices |
| CN102007573A (en) * | 2008-04-29 | 2011-04-06 | 应用材料公司 | Selective cobalt deposition on copper surfaces |
-
2014
- 2014-08-27 CN CN201410427394.9A patent/CN104152863B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1055014A (en) * | 1990-03-17 | 1991-10-02 | 西安电子科技大学 | Low temperature photochemistry vapor deposition silicon-dioxide, silicon nitride film technology |
| CN101416277A (en) * | 2003-10-10 | 2009-04-22 | 东京毅力科创株式会社 | Method and system for treating a dielectric film |
| CN101124351A (en) * | 2005-03-18 | 2008-02-13 | 布鲁尔科技公司 | Deposition of polymeric materials and precursors therefor |
| CN101443894A (en) * | 2005-11-23 | 2009-05-27 | 德克萨斯仪器股份有限公司 | Integration of pore sealing liner into dual-damascene methods and devices |
| CN102007573A (en) * | 2008-04-29 | 2011-04-06 | 应用材料公司 | Selective cobalt deposition on copper surfaces |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104795358A (en) * | 2015-04-13 | 2015-07-22 | 上海华力微电子有限公司 | Formation method and metal interconnection process of cobalt barrier layer |
| CN104795358B (en) * | 2015-04-13 | 2018-06-22 | 上海华力微电子有限公司 | The forming method on cobalt barrier layer and metal interconnection process |
| CN105552023A (en) * | 2016-02-26 | 2016-05-04 | 上海华力微电子有限公司 | Method for improving deposition selectivity of cobalt barrier layer |
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