CN104152863B - A method of it improving cobalt barrier deposition and selects ratio - Google Patents
A method of it improving cobalt barrier deposition and selects ratio Download PDFInfo
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- CN104152863B CN104152863B CN201410427394.9A CN201410427394A CN104152863B CN 104152863 B CN104152863 B CN 104152863B CN 201410427394 A CN201410427394 A CN 201410427394A CN 104152863 B CN104152863 B CN 104152863B
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Abstract
The invention discloses a kind of methods of raising cobalt barrier deposition selection ratio, production for copper diffusion barrier layer in integrated circuit last part technology, by first using direct optical cvd technique, the selective deposition layer of silicon dioxide in the hole on porous low k dielectric layer surface layer, densify the surface layer of porous low k dielectric layer, to obviously prevent cobalt in the deposition of porous low k dielectric layer surface, the deposition of cobalt selects ratio when further improving subsequent deposition cobalt barrier layer, therefore, it can reduce deposition of the cobalt on porous low k dielectric layer, effectively reduce the leakage current in integrated circuit last part technology process between copper wire.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing technology fields, spread more particularly, to a kind of improve as copper
The method of the deposition selection ratio of the cobalt film on barrier layer.
Background technique
With the development of CMOS integrated circuit fabrication process and the diminution of critical size, many new materials and technique quilt
It applies in device fabrication, to improve device performance.For example, being replaced in integrated circuit last part technology process with copper wire
Aluminum steel significantly reduces interconnection resistance；Meanwhile it is below using porous lowk (low-k) material to may be implemented 2.5
Dielectric constant.The RC retardation ratio of integrated circuit can be effectively reduced in these technologies.
Since copper-base is easily spread, after back segment copper interconnecting line is by chemical mechanical grinding, it can first deposit one layer of copper
Then diffusion barrier layer carries out the deposition of subsequent porous low k dielectric layer again, spreads to avoid copper into low k material.
In 28nm or more technology node, this layer of copper diffusion barrier layer generallys use nitrogen doped silicon carbide, and (NDC, k are about
5.3) film.Referring to FIG. 1, Fig. 1 is application schematic diagram of the NDC film as copper diffusion barrier layer.As shown, being served as a contrast in wafer
It is furnished with copper interconnecting line 5 in the porous low k dielectric layer 1 of lower layer on bottom (diagram wafer has been omitted from), the low k at copper vias wall
It is isolated between material and copper with tantalum (Ta) or barrier layer tantalum nitride (TaN) 6, prevents copper from spreading into low k material.It is mutual in copper
It is deposited with one layer of NDC layer 2 on line 5, as copper diffusion barrier layer, it is porous then to carry out subsequent upper layer on 2 film of NDC layer again
The deposition of low k dielectric layer 3 spreads to avoid copper into upper layer low k material.
And 28nm or less technology node has been arrived, the cobalt membrane diffusion barrier layer grown in a manner of CVD will be introduced.Please refer to figure
2, Fig. 2 be the application schematic diagram of cobalt diffusion barrier layer.As shown, before depositing NDC layer 2, first above copper interconnecting line 5
It deposits one layer of cobalt barrier layer 4 and is used as first layer copper diffusion barrier layer, then continue to be deposited as the diffusion of second layer copper on it again
The NDC layer 2 on barrier layer, and then carry out on 2 film of NDC layer the deposition of the porous low k dielectric layer 3 in subsequent upper layer.Why
It is because cobalt can not only preferably stop the diffusion of copper, while also production process can be prevented hollow using cobalt diffusion barrier layer
Steam in gas penetrates into layers of copper.
The introducing on cobalt barrier layer means the thickness that nitrogen doped silicon carbide (NDC) film can be thinned, this is advantageously reduced
Whole effectively k value.In addition, cobalt and copper have good adhesion, the reliability of product can be greatly improved.
But by CVD technique, cobalt film is to be grown in Cu (copper) film surface in a selective way, i.e., cobalt is in Cu
Surface is different with the deposition thickness on porous low k dielectric layer surface.According to the height of porous low k dielectric layer dielectric constant and
The difference of growth conditions, it is however generally that, deposition selection is than (thickness of cobalt on the thickness of cobalt/porous low k dielectric layer on Cu layer)
Ten or more, i.e., cobalt the deposition thickness on the surface Cu be ten times of the deposition thickness on porous low k dielectric layer surface with
Upper (i.e. as shown in Fig. 2, the cobalt film at copper vias shows thicker thickness, and the porous low k dielectric layer table between through-hole
Cobalt film is not shown on face, the deposition to indicate cobalt here is smaller).Deposition of the cobalt on dielectric layer is bigger, it is meant that copper
Leakage current between line is bigger.So, it is intended that on porous low k dielectric layer, the deposition of cobalt is small as far as possible, i.e. deposition selection
It is bigger than as far as possible.Therefore, deposition of the cobalt on porous low k dielectric layer how is reduced, to effectively reduce in integrated circuit
Leakage current in last part technology process between copper wire becomes an important topic of current industry.
Summary of the invention
It is an object of the invention to overcome drawbacks described above of the existing technology, a kind of raising cobalt barrier deposition choosing is provided
The method for selecting ratio, for the production of copper diffusion barrier layer in integrated circuit last part technology, by first using direct optical cvd technique,
The selective deposition layer of silicon dioxide in the hole on porous low k dielectric layer surface layer causes the surface layer of porous low k dielectric layer
Densification further improves subsequent deposition cobalt barrier layer to prevent cobalt in the deposition of porous low k dielectric layer surface significantly
When cobalt deposition selection ratio therefore can reduce deposition of the cobalt on porous low k dielectric layer, effectively reduce in integrated electricity
Leakage current in the last part technology process of road between copper wire.
To achieve the above object, technical scheme is as follows:
A method of it improving cobalt barrier deposition and selects ratio, for copper diffusion barrier layer in integrated circuit last part technology
Production, which comprises the following steps:
Step 1: providing a wafer, and the crystal column surface has porous low k dielectric layer, the porous low k dielectric layer
It is furnished with copper interconnecting line, and passes through planarization process；
Step 2: direct optical cvd technique, the selective deposition in the hole on the porous low k dielectric layer surface layer are used
Layer of silicon dioxide forms the surface layer of the porous low k dielectric layer of densification；
Step 3: the crystal column surface is cleaned；
Step 4: CVD technique selective deposition cobalt barrier layer on the porous low k dielectric layer is used, described
Copper diffusion barrier layer is formed on copper interconnecting line.
In the above-mentioned technical solutions, the deposition present invention utilizes cobalt on densification low k dielectric material surface selects ratio
It is much higher than the characteristic in the deposition selection ratio on porous low k dielectric material surface, by using direct optical cvd technique, more
Selective deposition layer of silicon dioxide in the hole on hole low k dielectric layer surface layer, so that the surface layer of porous low k dielectric layer is fine and close
Change, and has not been changed the loose porous character of porous low k dielectric layer.Therefore, using technological means of the invention, to device
Part will not have an adverse effect, and but be greatly improved the deposition selection ratio of cobalt.
Preferably, in step 2, when carrying out the direct optical cvd technique, the temperature of the porous low k dielectric layer is
200~400 DEG C.
Preferably, in step 2, when carrying out the direct optical cvd technique, reaction gas SiH4And N2O。
Preferably, in step 2, when carrying out the direct optical cvd technique, the wavelength of ultraviolet light is 175~195nm.
Preferably, in step 2, the number for carrying out the direct optical cvd technique is 1 to multiple.
It is further preferred that the number for carrying out the direct optical cvd technique is 1 to 3 time in step 2.
It is furthermore preferred that the number for carrying out the direct optical cvd technique is 2 times in step 2.
Preferably, in step 4, when using the process deposits cobalt barrier layer CVD, by the temperature of the porous low k dielectric layer
It is maintained at not less than 250 DEG C.
It can be seen from the above technical proposal that deposition of the present invention using cobalt on densification low k dielectric material surface is selected
It selects than being much higher than the characteristic in the deposition selection ratio on porous low k dielectric material surface, by first using direct optical cvd work
Skill, the selective deposition layer of silicon dioxide in the hole on porous low k dielectric layer surface layer, makes the table of porous low k dielectric layer
Layer densification, and do not change the loose porous character of porous low k dielectric layer, to prevent cobalt porous significantly
The deposition of low k dielectric layer surface, the deposition selection ratio of cobalt therefore can when further improving subsequent deposition cobalt barrier layer
Deposition of the cobalt on porous low k dielectric layer is reduced, the leakage in integrated circuit last part technology process between copper wire is effectively reduced
Electric current.
Detailed description of the invention
Fig. 1 is application schematic diagram of the NDC film as copper diffusion barrier layer；
Fig. 2 is the application schematic diagram of cobalt diffusion barrier layer；
Fig. 3 is a kind of flow chart for the method for improving cobalt barrier deposition selection ratio of the present invention；
Fig. 4~Fig. 8 is the device architecture schematic diagram for making cobalt barrier layer in one embodiment of the invention according to the method for Fig. 3.
Specific embodiment
With reference to the accompanying drawing, specific embodiments of the present invention will be described in further detail.Certain present invention is not
Following specific embodiments are confined to, general replacement known to those skilled in the art is also covered by protection model of the invention
In enclosing.
It should be noted that in following embodiments, using the schematic diagram of Fig. 4~Fig. 8 to by raising cobalt of the invention
The device architecture that the method for barrier deposition selection ratio is formed has carried out detailed statement.Embodiments of the present invention are being described in detail
When, for ease of description, partial enlargement and omission processing are not drawn according to general proportion and carried out to each schematic diagram, therefore, answers
It avoids in this, as limitation of the invention.
Referring to Fig. 3, Fig. 3 is a kind of flow chart for the method for improving cobalt barrier deposition selection ratio of the present invention.Meanwhile it asking
Control reference Fig. 4~Fig. 8, Fig. 4~Fig. 8 are the device junctions for making cobalt barrier layer in one embodiment of the invention according to the method for Fig. 3
Structure schematic diagram.The device architecture illustrated in Fig. 4~Fig. 8, it is corresponding with each making step in Fig. 3 respectively, in order to this hair
The understanding of bright method.
As shown in figure 3, the present invention provides a kind of methods of raising cobalt barrier deposition selection ratio, for after integrated circuit
The production of copper diffusion barrier layer in segment process, comprising the following steps:
As shown in frame 1, a wafer is provided, the crystal column surface has porous low k dielectric layer, and the porous low k is situated between
Matter layer is furnished with copper interconnecting line, and passes through planarization process.
Referring to FIG. 4, in integrated circuit last part technology process, on wafer substrate (diagram wafer has been omitted from, similarly hereinafter)
The porous low k dielectric layer of the lower layer of deposition 1 at identical structure (for compared with the structure of the prior art in Fig. 1,2, to using
It is furnished with copper interconnecting line 5 in identical numeral mark, similarly hereinafter), and passes through chemical mechanical grinding planarization process.In copper interconnecting line 5
Through-hole wall at low k material and deposition copper between be isolated with tantalum (Ta) or barrier layer tantalum nitride (TaN) 6, prevent copper to
It is spread in low k material.
As shown in frame 2, step 2: direct optical cvd technique is used, in the hole on the porous low k dielectric layer surface layer
Selective deposition layer of silicon dioxide forms the surface layer of the porous low k dielectric layer of densification.
Referring to FIG. 5, the wafer for being deposited with the porous low k dielectric layer 1 of lower layer in above-mentioned steps one is put into direct light
CVD silicon oxide deposition reaction chamber, using direct optical cvd technique (Photo-induced Chemical Vapor
Deposition, Photo-CVD), it is therefore an objective to porous 1 surface of low k dielectric layer of the lower layer of Xiang Jingyuan deposits silica.Deposition
Shi Caiyong SiH4And N2O is as reaction gas.It is maintained at substrate within the scope of certain temperature, that is, need to make lower layer
Porous low k dielectric layer 1 is maintained at 200~400 DEG C, in favor of the generation of deposition reaction.
During the deposition process, SiH is passed first into4(silane) gas.SiH4Molecule is smaller (< 1nm), and general porous low k
The pore diameter of material is 1~2nm or so.Therefore, silane molecule gets enter into the hole of the porous low k dielectric layer 1 of lower layer, and
It is attracted to the surface layer of the porous low k dielectric layer 1 of lower layer (this is the adsorptivity characteristic of porous material).Then pass to N2O gas,
Meanwhile low pressure mercury lamp is opened, under the action of the wavelength of generation is the ultraviolet light of 175~195nm (or can be generated using other
The fluorescent tube of this wave band ultraviolet light), make N2O dissociation, and silicyl oxide, to form silica.That is, by will be by
The silane oxidation being adsorbed in porous 1 surface layer of low k dielectric layer of lower layer, in the hole on porous 1 surface layer of low k dielectric layer of lower layer
It is filled with silica.
The silica being filled with is formed in the hole of porous low k material, it is meant that the surface layer of porous media film
It is densified.And on the copper surface of copper interconnecting line 5, since silane molecule will not be adsorbed, so it is heavy not will form silica
Product.Therefore, after direct optical cvd technique, the surface layer of the porous lowk dielectric layer 1 of lower layer will form the silica of densification
Filled layer 7.
Densification porous 1 surface layer of low k dielectric layer of lower layer link, carry out direct optical cvd technique number can for 1 to
Repeatedly, by increasing the cycle-index and adjusting process parameter of this technique, it is more in lower layer that silane molecule can be further increased
Adsorption deeply in hole low k dielectric layer 1, and improve the degree of densification.Experiment shows the repetition of direct optical cvd technique
When number is more than 3 times, therefore very little carries out direct the percentage contribution of 1 surface layer of low k dielectric layer densification porous to lower layer
The number of optical cvd technique is preferred with 1 to 3 time.In fact, the number of direct optical cvd technique is carried out at 2 times, the porous low of lower layer
The hole on 1 surface layer of k dielectric layer has just been filled substantially, therefore, is considered from cost of manufacture, can will be carried out direct optical cvd technique
Best number is determined as 2 times.
As shown in frame 3, step 3: the crystal column surface is cleaned.
After direct optical cvd technique, oxide can be generated on the copper surface of copper interconnecting line 5.Therefore, it is necessary to wafer table
Face is cleaned, and the oxide on copper removal surface is removed by cleaning, in favor of subsequent on copper surface deposit cobalt barrier layer.
As shown in frame 4, step 4: using CVD technique, selective deposition cobalt stops on the porous low k dielectric layer
Layer, to form copper diffusion barrier layer on the copper interconnecting line.
Referring to FIG. 6, using CVD technique, on the porous low k dielectric layer 1 of lower layer selective deposition cobalt barrier layer 8 (for
Show the deposition selection of cobalt at this time than with difference in the prior art, sedimentary condition changed, therefore by cobalt of the invention
Barrier layer is indicated with numeral mark " 8 ", to distinguish with 4 phase of cobalt barrier layer of the prior art in Fig. 2), cobalt will be selected according to deposition
Than preferentially being deposited on copper interconnecting line 5, to form copper diffusion barrier layer on copper interconnecting line 5.
Later, Fig. 7 and Fig. 8 are please referred to, since copper-base is easily spread, ground in back segment copper interconnecting line by chemical machinery
It after mill, to avoid copper from spreading into low k material, needs first to deposit copper diffusion barrier layer, it is more then to carry out subsequent upper layer again
The deposition of hole low k dielectric layer.By taking the application in 28nm or less technology node as an example, first it regard cobalt barrier layer 8 as first layer copper
Diffusion barrier layer continues to deposit NDC layer 2 on cobalt barrier layer 8, as second layer copper diffusion barrier layer, finally, again in NDC layer 2
The deposition of the porous low k dielectric layer 3 in subsequent upper layer is carried out on film.
According to data, growth thickness difference of the CVD cobalt in different dielectric substrates and growth conditions on substrate is bright
It is aobvious.Under the conditions of substrate is 250 DEG C, deposition selection on layers of copper and compact medium layer than close to 150:1, and layers of copper with it is porous
Than only 10~15, (in the prior art, cobalt is exactly directly in porous low k dielectric layer for deposition selection on low k dielectric layer
Upper deposition, therefore selection is deposited than only 10~15, it is meant that the leakage current between copper wire is relatively large).Therefore, cobalt is being carried out
When the deposition on barrier layer 8, the temperature of the porous low k dielectric layer of lower layer can be maintained at the state not less than 250 DEG C, in favor of cobalt
Ratio is selected with the big deposition for approaching 150:1 on the surface of copper interconnecting line 5 and the surface layer of the porous low k dielectric layer 1 of lower layer, preferentially
It deposits to form cobalt barrier layer 8 on the surface of copper interconnecting line 5.
Deposition selection of the cobalt on densification dielectric material surface is exactly utilized than much higher than porous in realization of the invention
The characteristic of the deposition selection ratio on low k dielectric material surface.Since the deposition of cobalt is carried out on dielectric material surface,
If changing the loose porous surface topography of porous low k dielectric material using certain technological means, so that it is densified, turn
Become densifying the surface topography of dielectric material, so that it may realize that cobalt is more preferentially existed with the big deposition selection ratio more than 100 times
It is deposited on copper.
Therefore the present invention is by using direct optical cvd technique, the selective deposition in the hole on porous low k dielectric layer surface layer
Layer of silicon dioxide makes the surface layer of porous low k dielectric layer become to densify, and has not been changed the whole of porous low k dielectric layer
The loose porous feature of body.Therefore, using technological means of the invention, will not have an adverse effect to device, but be greatly improved
The deposition of cobalt selects ratio.To which the present invention can prevent cobalt in the deposition of porous low k dielectric layer surface significantly, therefore can drop
Deposition of the low cobalt on porous low k dielectric layer, effectively reduces the electric leakage in integrated circuit last part technology process between copper wire
Stream.
Above-described to be merely a preferred embodiment of the present invention, the patent that the embodiment is not intended to limit the invention is protected
Range is protected, therefore all with the variation of equivalent structure made by specification and accompanying drawing content of the invention, similarly should be included in
In protection scope of the present invention.
Claims (7)
1. a kind of method for improving cobalt barrier deposition selection ratio, the system for copper diffusion barrier layer in integrated circuit last part technology
Make, which comprises the following steps:
Step 1: providing a wafer, and the crystal column surface has porous low k dielectric layer, and the porous low k dielectric layer is furnished with
Copper interconnecting line, and pass through planarization process；
Step 2: direct optical cvd technique is used, one layer of selective deposition in the hole on the porous low k dielectric layer surface layer
Silica is filled with silica in the hole on porous low k dielectric layer surface layer, forms the described porous of densification
The surface layer of low k dielectric layer；Wherein, during the deposition process, SiH is passed first into4Gas, SiH4Molecule gets enter into porous low k
The hole of dielectric layer, and it is attracted to the surface layer of porous low k dielectric layer, then pass to N2O gas, meanwhile, open low-pressure mercury
Lamp makes N2O dissociation, and aoxidize SiH4, to form silica；
Step 3: the crystal column surface is cleaned；
Step 4: CVD technique selective deposition cobalt barrier layer on the porous low k dielectric layer is used, with mutual in the copper
Copper diffusion barrier layer is formed on line.
2. the method according to claim 1 for improving cobalt barrier deposition selection ratio, which is characterized in that in step 2,
When carrying out the direct optical cvd technique, the temperature of the porous low k dielectric layer is 200~400 DEG C.
3. the method according to claim 1 for improving cobalt barrier deposition selection ratio, which is characterized in that in step 2,
When carrying out the direct optical cvd technique, the wavelength of ultraviolet light is 175~195nm.
4. the method according to any one of claims 1 to 3 for improving cobalt barrier deposition selection ratio, which is characterized in that
In step 2, the number for carrying out the direct optical cvd technique is 1 to multiple.
5. the method according to claim 4 for improving cobalt barrier deposition selection ratio, which is characterized in that in step 2, into
The number of the row direct optical cvd technique is 1 to 3 time.
6. the method according to claim 5 for improving cobalt barrier deposition selection ratio, which is characterized in that in step 2, into
The number of the row direct optical cvd technique is 2 times.
7. the method according to claim 1 for improving cobalt barrier deposition selection ratio, which is characterized in that in step 4, adopt
When with the process deposits cobalt barrier layer CVD, the temperature of the porous low k dielectric layer is maintained at not less than 250 DEG C.
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| CN104795358B (en) * | 2015-04-13 | 2018-06-22 | 上海华力微电子有限公司 | The forming method on cobalt barrier layer and metal interconnection process |
| CN105552023A (en) * | 2016-02-26 | 2016-05-04 | 上海华力微电子有限公司 | Method for improving deposition selectivity of cobalt barrier layer |
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| CN1055014A (en) * | 1990-03-17 | 1991-10-02 | 西安电子科技大学 | Low temperature photochemistry vapor deposition silicon-dioxide, silicon nitride film technology |
| US7553769B2 (en) * | 2003-10-10 | 2009-06-30 | Tokyo Electron Limited | Method for treating a dielectric film |
| CN101124351A (en) * | 2005-03-18 | 2008-02-13 | 布鲁尔科技公司 | Deposition of polymeric materials and precursors therefor |
| US7338893B2 (en) * | 2005-11-23 | 2008-03-04 | Texas Instruments Incorporated | Integration of pore sealing liner into dual-damascene methods and devices |
| US20090269507A1 (en) * | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
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