CN105549152B - A kind of preparation method of the full sulphur system optical waveguide of Te base - Google Patents
A kind of preparation method of the full sulphur system optical waveguide of Te base Download PDFInfo
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- CN105549152B CN105549152B CN201610046599.1A CN201610046599A CN105549152B CN 105549152 B CN105549152 B CN 105549152B CN 201610046599 A CN201610046599 A CN 201610046599A CN 105549152 B CN105549152 B CN 105549152B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 title description 41
- 239000005864 Sulphur Substances 0.000 title description 41
- 239000005387 chalcogenide glass Substances 0.000 claims abstract description 96
- 239000010408 film Substances 0.000 claims abstract description 74
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 150000004770 chalcogenides Chemical class 0.000 claims abstract description 53
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 39
- 239000003960 organic solvent Substances 0.000 claims abstract description 23
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 238000004544 sputter deposition Methods 0.000 claims description 60
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 52
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 39
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 38
- 239000011248 coating agent Substances 0.000 claims description 37
- 238000000576 coating method Methods 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 36
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052786 argon Inorganic materials 0.000 claims description 12
- 238000005498 polishing Methods 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 9
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims 2
- 238000011109 contamination Methods 0.000 claims 1
- 239000003292 glue Substances 0.000 claims 1
- 238000000206 photolithography Methods 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract description 28
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 229910005936 Ge—Sb Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 description 44
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000010276 construction Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 10
- 238000009826 distribution Methods 0.000 description 6
- 239000012528 membrane Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000004771 selenides Chemical class 0.000 description 3
- 150000004772 tellurides Chemical class 0.000 description 3
- 239000005371 ZBLAN Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052798 chalcogen Inorganic materials 0.000 description 1
- 150000001787 chalcogens Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optical Integrated Circuits (AREA)
Abstract
本发明公开了一种Te基全硫系光波导的制备方法，其包括以下步骤：①取一块硫系玻璃作为衬底；然后在硫系玻璃的光滑的上表面上镀设一层Ge‑Sb‑Se硫系薄膜；接着在Ge‑Sb‑Se硫系薄膜上涂覆一层光刻胶；②利用具有所需掩膜结构的掩膜板对步骤①得到的基材进行曝光和显影，得到具有掩膜结构的基材；③在步骤②得到的具有掩膜结构的基材上镀设一层Ge15Ga10Te75硫系薄膜；④将步骤③得到的基材完全浸入有机溶剂中，利用有机溶剂溶解步骤③得到的基材中的光刻胶，同时带走了位于光刻胶上方的Ge15Ga10Te75硫系薄膜，形成Te基全硫系光波导；优点是其制备得到的Te基全硫系光波导具有更宽的光透过范围，且对光具有很好的限域作用，能够有效地减少传输损耗。
The invention discloses a preparation method of a Te-based all-chalcogenide optical waveguide, which comprises the following steps: (1) taking a piece of chalcogenide glass as a substrate; then plating a layer of Ge-Sb on the smooth upper surface of the chalcogenide glass ‑Se chalcogenide thin film; then coat a layer of photoresist on the Ge‑Sb‑Se chalcogenide thin film; 2. use a mask plate with a required mask structure to expose and develop the base material obtained in step 1, to obtain A base material with a mask structure; ③ a layer of Ge 15 Ga 10 Te 75 chalcogenide thin film is plated on the base material with a mask structure obtained in step ②; ④ The base material obtained in step ③ is completely immersed in an organic solvent, Using organic solvent to dissolve the photoresist in the substrate obtained in step ③, the Ge 15 Ga 10 Te 75 chalcogenide film located above the photoresist is taken away to form a Te-based all-chalcogenide optical waveguide; the advantage is that it can be prepared by The Te-based all-chalcogenide optical waveguide has a wider light transmission range, and has a good confinement effect on light, which can effectively reduce the transmission loss.
Description
Technical field
The present invention relates to a kind of technologies of preparing of optical waveguide, more particularly, to a kind of preparation side of the full sulphur system optical waveguide of Te base
Method.
Background technique
Integrated photon technology is the important development direction of photon technology.Optical waveguide is defined as being surrounded by region of low refractive index
The high-refractive-index regions got up, it is the basic composition unit of integrated optics and the basis of all optical communication.Planar integration light wave
Device is led since its miniaturization, integrated advantage are in the neck such as optical-fibre communications, optical remote sensing, sensing, optical storage and photoelectric display
Domain plays the effect to become more and more important.
Chalcogenide glass is to introduce Si (silicon), Ge (germanium), As based on chalcogen (S (sulphur), Se (selenium), Te (tellurium))
The amorphous material that the elements such as (arsenic), Sb (antimony) are formed, is a kind of infrared optical material, and there is high refractive index, high rare earth to mix for it
Miscellaneous ability, great optical nonlinearity and light sensitive characteristic, these features make chalcogenide glass fiber waveguide device infrared and remote in
Infrared-gas and bio-sensing, mid-infrared laser light source, all-optical device and interstellar space field of detecting have wide application
Prospect.Fig. 1 gives Te sill, Se sill, S sill, ZBLAN material and SiO2Material penetrates spectrum, from Fig. 1
It can be seen that Te sill it is infrared through window 20 microns near, and Se sill it is infrared transmission window it is attached at 17 microns
Closely, the infrared window that penetrates of S sill is near 13 microns.It can be seen that Te sill and Se sill, S in sulphur based material
Sill is compared, it has broader infrared transmission window (can achieve 25 microns), it can be completely covered bio-sensing and answer
Spectral region, in the fingerprint region of life detection, biological organism, detection is with a wide range of applications.
Current chalcogenide glass fiber waveguide device is substantially with SOI (Silicon-On-Insulator, in insulating substrate
Silicon) based on platform, substrate is the SiO of low-refraction2(silica) material, but due to SiO2The infrared cutoff wave of material
Length is less than 4 microns, therefore, mid and far infrared is transmitted, SiO is used2It necessarily will cause very big absorption loss as optical material,
This will affect the job applications of its infrared region.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of preparation methods of the full sulphur system optical waveguide of Te base, are prepared into
There is the full sulphur system optical waveguide of the Te base arrived broader light to penetrate range, and have good confinement effect to light, can be effectively
Reduce transmission loss.
The technical scheme of the invention to solve the technical problem is: a kind of preparation side of the full sulphur system optical waveguide of Te base
Method, it is characterised in that the following steps are included:
1. taking one piece of chalcogenide glass as substrate；Then plating sets one layer of Ge-Sb- on the smooth upper surface of chalcogenide glass
Se Chalcogenide films；Then a layer photoresist is coated on Ge-Sb-Se Chalcogenide films；
2. 1. substrate that step obtains is exposed and is developed using the mask plate with required mask structure, had
There is the substrate of mask structure；
3. plating sets one layer of Ge on the 2. substrate with mask structure that step obtains15Ga10Te75Chalcogenide films；
4. 3. substrate that step is obtained is completely immersed in organic solvent, the base 3. obtained using organic solvent dissolving step
Photoresist on material, while taking away the Ge above photoresist15Ga10Te75Chalcogenide films form the full sulphur system optical waveguide of Te base.
The step 1. in chalcogenide glass upper and lower surfaces be by polishing, polishing technology formed light
Sliding surface.
The step 1. on the smooth upper surface of chalcogenide glass plating set one layer of Ge-Sb-Se Chalcogenide films before,
First chalcogenide glass is cleaned to go deimpurity pollution, detailed process are as follows: 1. -1, by chalcogenide glass be completely immersed in acetone
In, it then utilizes ultrasonic cleaning 15 minutes~25 minutes, to remove the impurity on chalcogenide glass；1. -2, being taken out from acetone
Chalcogenide glass after cleaning for the first time, and the chalcogenide glass of taking-up is completely immersed in methanol, then divided using ultrasonic cleaning 3
Clock~8 minute, tentatively to remove remaining acetone on chalcogenide glass；1. -3, from the sulphur system taken out in methanol second after cleaning
Glass, and the chalcogenide glass of taking-up is completely immersed in isopropanol, it then utilizes ultrasonic cleaning 3 minutes~8 minutes, with complete
Remove remaining acetone on chalcogenide glass；1. the chalcogenide glass cleaned up -4, is taken out from isopropanol, then with being dried with nitrogen
The chalcogenide glass cleaned up.Here, the impurity on chalcogenide glass is effectively removed first with acetone, it is then preliminary using methanol
Remaining acetone on chalcogenide glass is removed, isopropanol is recycled to completely remove remaining acetone on chalcogenide glass, finally drying is clear
The chalcogenide glass of wash clean, carrying out cleaning treatment to the surface of chalcogenide glass can be such that subsequent waveguide preparation process flow keeps
Completely.
The step 1. in the platings of Ge-Sb-Se Chalcogenide films set using magnetically controlled sputter method, wherein magnetron sputtering
The vacuum degree of the sputtering chamber of membranous system is 1.5 × 10-4Pa~2.5 × 10-4Pa, build-up of luminance air pressure are 2.8 pas~3.2 pas, magnetic control
The sputtering pressure of sputter coating system is 0.22 pa~0.27 pa, sputtering power is 25 watts~30 watts, sputtering time is 2 small
When~3 hours, the volume flow for the argon gas being passed through into the sputtering chamber of magnetron sputtering coating system is 45sccm~55sccm.
Here, setting the Ge-Sb-Se Chalcogenide films that Ge-Sb-Se Chalcogenide films enable to using the plating of existing magnetically controlled sputter method
Uniformity is good, and compositional difference is small；And the parameter of work is sputtered by limiting magnetron sputtering coating system, the Ge- obtained can be made
Sb-Se Chalcogenide films have the characteristics that compactness is good, optical scattering losses are small, uniformity is good, are suitble to the production of planar optical waveguide.
The step 1. in photoresist coating utilize sol evenning machine, wherein fast-turn construction after the slow-speed of sol evenning machine elder generation, slow-speed revolving speed
For 2000rpm, the slow-speed time is 3 seconds, and fast-turn construction revolving speed is 6000rpm, and the fast-turn construction time is 30 seconds.Here, coating photoresist is first slow
Fast-turn construction can make photoresist adherency good and uniform after turning.
The step 1. in Ge-Sb-Se Chalcogenide films with a thickness of 0.8~1.2 micron, photoresist with a thickness of
1.5~1.8 microns.Here, limit Ge-Sb-Se Chalcogenide films thickness be in order to reduce Ge-Sb-Se Chalcogenide films and
Ge15Ga10Te75Stress between Chalcogenide films；Limit photoresist thickness be greater than Ge-Sb-Se Chalcogenide films thickness be in order to
Prepare sulphur system optical waveguide smooth.
The detailed process of the step 2. are as follows: 2. -1, using contact system, be close to what 1. step obtained in mask plate
1. substrate that step obtains is exposed after photoresist in substrate, wherein the time for exposure is 8 seconds~12 seconds；2. -2, in hydrogen
Develop in sodium oxide molybdena alkaline-based developer to the substrate after exposure, obtains the substrate with mask structure, wherein developing time
It is 45 seconds~60 seconds.Here, limiting the time for exposure is to generate a good figure on the substrate for have been coated with photoresist；
Limiting developing time is in order to which the figure of mask plate is accurately copied in photoresist, to guarantee the quality of photoetching.
The step 3. in Ge15Ga10Te75The plating of Chalcogenide films is set using magnetically controlled sputter method, wherein magnetron sputtering
The vacuum degree of the sputtering chamber of coating system is 1.5 × 10-4Pa~2.5 × 10-4Pa, build-up of luminance air pressure are 2.8 pas~3.2 pas, magnetic
The sputtering pressure for controlling sputter coating system is 0.22 pa~0.27 pa, sputtering power is 25 watts~30 watts, sputtering time 2
Hour~3 hours, the volume flow of the argon gas being passed through into the sputtering chamber of magnetron sputtering coating system be 45sccm~
55sccm.Here, setting Ge using the plating of existing magnetically controlled sputter method15Ga10Te75What Chalcogenide films enabled to
Ge15Ga10Te75The uniformity of Chalcogenide films is good, and compositional difference is small；And work is sputtered by limiting magnetron sputtering coating system
Parameter so that obtain Ge15Ga10Te75Chalcogenide films have the characteristics that compactness is good, optical scattering losses are small, uniformity is good,
It is suitble to the production of planar optical waveguide.
The step 3. in Ge15Ga10Te75Chalcogenide films with a thickness of 0.8~1.2 micron.Here, limiting
Ge15Ga10Te75The thickness of Chalcogenide films is the height in order to obtain required optical waveguide.
Photoresist on the step substrate that 4. 3. middle utilization organic solvent dissolving step obtains, while taking away and being located at
Ge above photoresist15Ga10Te75It is recycled ultrasonic cleaning 5 minutes~10 minutes after Chalcogenide films；The step 4. in
Organic solvent be N-Methyl pyrrolidone that concentration is 99.9%.Here, carrying out ultrasonic cleaning when dissolving photoresist is
In order to come into full contact with photoresist and organic solvent, thus the structure of optical waveguide required for obtaining；Use concentration for 99.9%
N-Methyl pyrrolidone can effectively dissolve the photoresist on substrate, while also having taken away above photoresist
Ge15Ga10Te75Chalcogenide films.
Compared with the prior art, the advantages of the present invention are as follows:
1) the method for the present invention is using selenide thin film as substrate material, and tellurides film is light function transmission material, and existing
SiO2Material is compared, and tellurides thin-film material has broader light through range (long wave cut-off wavelength reachable~15 microns),
The absorption of infrared light can be effectively reduced.
2) the method for the present invention is using selenide thin film and tellurides film as waveguiding structure material, due to selenides and telluro
Material belongs to same family, and material property is close, therefore can be effectively reduced when waveguide photoetching makes annealing treatment because of the coefficient of expansion
Film layer break-off caused by difference.
Detailed description of the invention
Fig. 1 is Te material, Se sill, S sill, ZBLAN material and SiO2Material penetrates spectrum；
Fig. 2 is the Ge measured using infrared ellipsometer24Sb3Se73Chalcogenide films and Ge15Ga10Te75Chalcogenide films are respective
The relation curve of refractive index and wavelength；
Fig. 3 is the result schematic diagram in per stage during preparing the full sulphur system optical waveguide of Te base using the method for the present invention；
Fig. 4 is the cross-sectional view for the full sulphur system optical waveguide structure of Te base that embodiment one is prepared；
Fig. 5 a is to carry out emulation experiment in wavelength to the full sulphur system optical waveguide of Te base shown in Fig. 4 using existing simulation software
For the mode distributions figure for simulating obtained TE mould at 4.8 microns；
Fig. 5 b is to carry out emulation experiment in wavelength to the full sulphur system optical waveguide of Te base shown in Fig. 4 using existing simulation software
For the mode distributions figure for simulating obtained TM mould at 4.8 microns.
Specific embodiment
Closing figure embodiment below, present invention is further described in detail.
Embodiment one:
A kind of preparation method for the full sulphur system optical waveguide of Te base that the present embodiment proposes comprising following steps:
1. a block size is taken to be divided into Ge for 0.1 centimetre of 3 cm x, 3 cm x, group20Sb15Se65Chalcogenide glass (Chg) make
For substrate, the upper and lower surfaces of the chalcogenide glass be by polishing, the smooth surface that polishing technology is formed；Then exist
Plating sets a layer thickness as 1.2 microns of Ge on the smooth upper surface of chalcogenide glass24Sb3Se73Chalcogenide films；Followed by existing
Sol evenning machine in Ge24Sb3Se73The photoresist that a layer thickness is 1.5 microns is coated on Chalcogenide films.
In this particular embodiment, plating sets one layer of Ge on the smooth upper surface of chalcogenide glass24Sb3Se73Chalcogenide films
Before, first chalcogenide glass is cleaned to go deimpurity pollution, detailed process are as follows: 1. -1, by chalcogenide glass be completely immersed in
In acetone, then utilize ultrasonic cleaning 20 minutes, to remove the impurity on chalcogenide glass；1. -2, taking out first from acetone
Chalcogenide glass after secondary cleaning, and the chalcogenide glass of taking-up is completely immersed in methanol, then utilize ultrasonic cleaning 5 minutes,
Tentatively to remove remaining acetone on chalcogenide glass；1. -3, from the chalcogenide glass taken out in methanol second after cleaning, and will take
Chalcogenide glass out is completely immersed in isopropanol, is then utilized ultrasonic cleaning 5 minutes, is remained on chalcogenide glass with completely removing
Acetone；1. the chalcogenide glass cleaned up -4, is taken out from isopropanol, then with being dried with nitrogen the sulphur system glass cleaned up
Glass.
In this particular embodiment, Ge24Sb3Se73The plating of Chalcogenide films is set using existing magnetically controlled sputter method, wherein
The vacuum degree of the sputtering chamber of magnetron sputtering coating system is 2.0 × 10-4Pa, build-up of luminance air pressure are 3 pas, magnetron sputtering coating system
Sputtering pressure be 0.25 pa, sputtering power is 30 watts, sputtering time is 2 hours, the sputtering to magnetron sputtering coating system
The volume flow for the argon gas being passed through in chamber is 50sccm.
In this particular embodiment, the coating of photoresist utilizes existing sol evenning machine, wherein fast after the slow-speed of sol evenning machine elder generation
Turn, slow-speed revolving speed is 2000rpm, and the slow-speed time is 3 seconds, and fast-turn construction revolving speed is 6000rpm, and the fast-turn construction time is 30 seconds.
In this particular embodiment, photoresist uses AZ5214 photoresist.
2. 1. substrate that step obtains is exposed and is developed using the mask plate with required mask structure, had
There is the substrate of mask structure.Photoetching is an important factor for influencing photonic device quality, on the one hand it determines optical waveguide
The attainable size of institute, on the other hand determines the quality of optical waveguide line quality.
In this particular embodiment, the detailed process of step 2. are as follows: 2. -1, using existing contact system, in exposure mask
Plate is exposed 1. substrate that step obtains after being close to the photoresist in the substrate that 1. obtains of step, wherein the time for exposure is
10 seconds；2. -2, developing in Sodium Hydroxide Alkaline developer solution to the substrate after exposure, the base with mask structure is obtained
Material, wherein developing time is 50 seconds.
3. plating sets a layer thickness as 1 micron of Ge on the 2. substrate with mask structure that step obtains15Ga10Te75Sulphur
It is film.
In this particular embodiment, Ge15Ga10Te75The plating of Chalcogenide films is set using existing magnetically controlled sputter method, wherein
The vacuum degree of the sputtering chamber of magnetron sputtering coating system is 2.0 × 10-4Pa, build-up of luminance air pressure are 3 pas, magnetron sputtering coating system
Sputtering pressure be 0.25 pa, sputtering power is 30 watts, sputtering time is 2 hours, the sputtering to magnetron sputtering coating system
The volume flow for the argon gas being passed through in chamber is 50sccm.
4. 3. substrate that step is obtained is completely immersed in organic solvent, the base 3. obtained using organic solvent dissolving step
Photoresist on material, while also having taken away the Ge above photoresist15Ga10Te75When Chalcogenide films, recycle ultrasonic wave clear
It washes 10 minutes, forms the full sulphur system optical waveguide of Te base.
In this particular embodiment, organic solvent is the N-Methyl pyrrolidone that concentration is 99.9%.
Embodiment two:
A kind of preparation method for the full sulphur system optical waveguide of Te base that the present embodiment proposes comprising following steps:
1. a block size is taken to be divided into Ge for 0.1 centimetre of 3 cm x, 3 cm x, group20Sb15Se65Chalcogenide glass (Chg) make
For substrate, the upper and lower surfaces of the chalcogenide glass be by polishing, the smooth surface that polishing technology is formed；Then exist
Plating sets a layer thickness as 1 micron of Ge on the smooth upper surface of chalcogenide glass24Sb3Se73Chalcogenide films；Followed by existing
Sol evenning machine is in Ge24Sb3Se73The photoresist that a layer thickness is 1.8 microns is coated on Chalcogenide films.
In this particular embodiment, plating sets one layer of Ge on the smooth upper surface of chalcogenide glass24Sb3Se73Chalcogenide films
Before, first chalcogenide glass is cleaned to go deimpurity pollution, detailed process are as follows: 1. -1, by chalcogenide glass be completely immersed in
In acetone, then utilize ultrasonic cleaning 18 minutes, to remove the impurity on chalcogenide glass；1. -2, taking out first from acetone
Chalcogenide glass after secondary cleaning, and the chalcogenide glass of taking-up is completely immersed in methanol, then utilize ultrasonic cleaning 8 minutes,
Tentatively to remove remaining acetone on chalcogenide glass；1. -3, from the chalcogenide glass taken out in methanol second after cleaning, and will take
Chalcogenide glass out is completely immersed in isopropanol, is then utilized ultrasonic cleaning 6 minutes, is remained on chalcogenide glass with completely removing
Acetone；1. the chalcogenide glass cleaned up -4, is taken out from isopropanol, then with being dried with nitrogen the sulphur system glass cleaned up
Glass.
In this particular embodiment, Ge24Sb3Se73The plating of Chalcogenide films is set using existing magnetically controlled sputter method, wherein
The vacuum degree of the sputtering chamber of magnetron sputtering coating system is 1.8 × 10-4Pa, build-up of luminance air pressure are 3.2 pas, magnetron sputtering membrane system
The sputtering pressure of system is 0.22 pa, sputtering power is 25 watts, sputtering time is 3 hours, to splashing for magnetron sputtering coating system
The volume flow for penetrating the argon gas being passed through in chamber is 52sccm.
In this particular embodiment, the coating of photoresist utilizes existing sol evenning machine, wherein fast after the slow-speed of sol evenning machine elder generation
Turn, slow-speed revolving speed is 2000rpm, and the slow-speed time is 3 seconds, and fast-turn construction revolving speed is 6000rpm, and the fast-turn construction time is 30 seconds.
In this particular embodiment, photoresist uses AZ5214 photoresist.
2. 1. substrate that step obtains is exposed and is developed using the mask plate with required mask structure, had
There is the substrate of mask structure.Photoetching is an important factor for influencing photonic device quality, on the one hand it determines optical waveguide
The attainable size of institute, on the other hand determines the quality of optical waveguide line quality.
In this particular embodiment, the detailed process of step 2. are as follows: 2. -1, using existing contact system, in exposure mask
Plate is exposed 1. substrate that step obtains after being close to the photoresist in 1. substrate that step obtains, wherein the time for exposure 8
Second；2. -2, developing in Sodium Hydroxide Alkaline developer solution to the substrate after exposure, the substrate with mask structure is obtained,
Wherein, developing time is 45 seconds.
3. plating sets a layer thickness as 0.8 micron of Ge on the 2. substrate with mask structure that step obtains15Ga10Te75
Chalcogenide films.
In this particular embodiment, Ge15Ga10Te75The plating of Chalcogenide films is set using existing magnetically controlled sputter method, wherein
The vacuum degree of the sputtering chamber of magnetron sputtering coating system is 1.8 × 10-4Pa, build-up of luminance air pressure are 3.2 pas, magnetron sputtering membrane system
The sputtering pressure of system is 0.22 pa, sputtering power is 25 watts, sputtering time is 3 hours, to splashing for magnetron sputtering coating system
The volume flow for penetrating the argon gas being passed through in chamber is 52sccm.
4. 3. substrate that step is obtained is completely immersed in organic solvent, the base 3. obtained using organic solvent dissolving step
Photoresist on material, while also having taken away the Ge above photoresist15Ga10Te75When Chalcogenide films, recycle ultrasonic wave clear
It washes 8 minutes, forms the full sulphur system optical waveguide of Te base.
In this particular embodiment, organic solvent is the N-Methyl pyrrolidone that concentration is 99.9%.
Embodiment three:
A kind of preparation method for the full sulphur system optical waveguide of Te base that the present embodiment proposes comprising following steps:
1. a block size is taken to be divided into Ge for 0.1 centimetre of 3 cm x, 3 cm x, group28Sb12Se60Chalcogenide glass (Chg) make
For substrate, the upper and lower surfaces of the chalcogenide glass be by polishing, the smooth surface that polishing technology is formed；Then exist
Plating sets a layer thickness as 1.2 microns of Ge on the smooth upper surface of chalcogenide glass20Sb15Se65Chalcogenide films；Followed by existing
Some sol evenning machines are in Ge20Sb15Se65The photoresist that a layer thickness is 1.5 microns is coated on Chalcogenide films.
In this particular embodiment, plating sets one layer of Ge on the smooth upper surface of chalcogenide glass20Sb15Se65Chalcogenide films
Before, first chalcogenide glass is cleaned to go deimpurity pollution, detailed process are as follows: 1. -1, by chalcogenide glass be completely immersed in
In acetone, then utilize ultrasonic cleaning 25 minutes, to remove the impurity on chalcogenide glass；1. -2, taking out first from acetone
Chalcogenide glass after secondary cleaning, and the chalcogenide glass of taking-up is completely immersed in methanol, then utilize ultrasonic cleaning 4 minutes,
Tentatively to remove remaining acetone on chalcogenide glass；1. -3, from the chalcogenide glass taken out in methanol second after cleaning, and will take
Chalcogenide glass out is completely immersed in isopropanol, is then utilized ultrasonic cleaning 8 minutes, is remained on chalcogenide glass with completely removing
Acetone；1. the chalcogenide glass cleaned up -4, is taken out from isopropanol, then with being dried with nitrogen the sulphur system glass cleaned up
Glass.
In this particular embodiment, Ge20Sb15Se65The plating of Chalcogenide films is set using existing magnetically controlled sputter method, wherein
The vacuum degree of the sputtering chamber of magnetron sputtering coating system is 2.5 × 10-4Pa, build-up of luminance air pressure are 2.8 pas, magnetron sputtering membrane system
The sputtering pressure of system is 0.27 pa, sputtering power is 27 watts, sputtering time is 2.5 hours, to magnetron sputtering coating system
The volume flow for the argon gas being passed through in sputtering chamber is 45sccm.
In this particular embodiment, the coating of photoresist utilizes existing sol evenning machine, wherein fast after the slow-speed of sol evenning machine elder generation
Turn, slow-speed revolving speed is 2000rpm, and the slow-speed time is 3 seconds, and fast-turn construction revolving speed is 6000rpm, and the fast-turn construction time is 30 seconds.
In this particular embodiment, photoresist uses AZ5214 photoresist.
2. 1. substrate that step obtains is exposed and is developed using the mask plate with required mask structure, had
There is the substrate of mask structure.Photoetching is an important factor for influencing photonic device quality, on the one hand it determines optical waveguide
The attainable size of institute, on the other hand determines the quality of optical waveguide line quality.
In this particular embodiment, the detailed process of step 2. are as follows: 2. -1, using existing contact system, in exposure mask
Plate is exposed 1. substrate that step obtains after being close to the photoresist in the substrate that 1. obtains of step, wherein the time for exposure is
12 seconds；2. -2, developing in Sodium Hydroxide Alkaline developer solution to the substrate after exposure, the base with mask structure is obtained
Material, wherein developing time is 45 seconds.
3. plating sets a layer thickness as 1 micron of Ge on the 2. substrate with mask structure that step obtains15Ga10Te75Sulphur
It is film.
In this particular embodiment, Ge15Ga10Te75The plating of Chalcogenide films is set using existing magnetically controlled sputter method, wherein
The vacuum degree of the sputtering chamber of magnetron sputtering coating system is 2.5 × 10-4Pa, build-up of luminance air pressure are 2.8 pas, magnetron sputtering membrane system
The sputtering pressure of system is 0.27 pa, sputtering power is 27 watts, sputtering time is 2.5 hours, to magnetron sputtering coating system
The volume flow for the argon gas being passed through in sputtering chamber is 45sccm.
4. 3. substrate that step is obtained is completely immersed in organic solvent, the base 3. obtained using organic solvent dissolving step
Photoresist on material, while also having taken away the Ge above photoresist15Ga10Te75When Chalcogenide films, recycle ultrasonic wave clear
It washes 6 minutes, forms the full sulphur system optical waveguide of Te base.
In this particular embodiment, organic solvent is the N-Methyl pyrrolidone that concentration is 99.9%.
Example IV:
A kind of preparation method for the full sulphur system optical waveguide of Te base that the present embodiment proposes comprising following steps:
1. a block size is taken to be divided into Ge for 0.1 centimetre of 3 cm x, 3 cm x, group28Sb12Se60Chalcogenide glass (Chg) make
For substrate, the upper and lower surfaces of the chalcogenide glass be by polishing, the smooth surface that polishing technology is formed；Then exist
Plating sets a layer thickness as 1 micron of Ge on the smooth upper surface of chalcogenide glass20Sb15Se65Chalcogenide films；Followed by existing
Sol evenning machine in Ge20Sb15Se65The photoresist that a layer thickness is 1.8 microns is coated on Chalcogenide films.
In this particular embodiment, plating sets one layer of Ge on the smooth upper surface of chalcogenide glass20Sb15Se65Chalcogenide films
Before, first chalcogenide glass is cleaned to go deimpurity pollution, detailed process are as follows: 1. -1, by chalcogenide glass be completely immersed in
In acetone, then utilize ultrasonic cleaning 25 minutes, to remove the impurity on chalcogenide glass；1. -2, taking out first from acetone
Chalcogenide glass after secondary cleaning, and the chalcogenide glass of taking-up is completely immersed in methanol, then utilize ultrasonic cleaning 4 minutes,
Tentatively to remove remaining acetone on chalcogenide glass；1. -3, from the chalcogenide glass taken out in methanol second after cleaning, and will take
Chalcogenide glass out is completely immersed in isopropanol, is then utilized ultrasonic cleaning 8 minutes, is remained on chalcogenide glass with completely removing
Acetone；1. the chalcogenide glass cleaned up -4, is taken out from isopropanol, then with being dried with nitrogen the sulphur system glass cleaned up
Glass.
In this particular embodiment, Ge20Sb15Se65The plating of Chalcogenide films is set using existing magnetically controlled sputter method, wherein
The vacuum degree of the sputtering chamber of magnetron sputtering coating system is 2.5 × 10-4Pa, build-up of luminance air pressure are 2.8 pas, magnetron sputtering membrane system
The sputtering pressure of system is 0.27 pa, sputtering power is 27 watts, sputtering time is 2.5 hours, to magnetron sputtering coating system
The volume flow for the argon gas being passed through in sputtering chamber is 45sccm.
In this particular embodiment, the coating of photoresist utilizes existing sol evenning machine, wherein fast after the slow-speed of sol evenning machine elder generation
Turn, slow-speed revolving speed is 2000rpm, and the slow-speed time is 3 seconds, and fast-turn construction revolving speed is 6000rpm, and the fast-turn construction time is 30 seconds.
In this particular embodiment, photoresist uses AZ5214 photoresist.
2. 1. substrate that step obtains is exposed and is developed using the mask plate with required mask structure, had
There is the substrate of mask structure.Photoetching is an important factor for influencing photonic device quality, on the one hand it determines optical waveguide
The attainable size of institute, on the other hand determines the quality of optical waveguide line quality.
In this particular embodiment, the detailed process of step 2. are as follows: 2. -1, using existing contact system, in exposure mask
Plate is exposed 1. substrate that step obtains after being close to the photoresist in the substrate that 1. obtains of step, wherein the time for exposure is
12 seconds；2. -2, developing in Sodium Hydroxide Alkaline developer solution to the substrate after exposure, the base with mask structure is obtained
Material, wherein developing time is 45 seconds.
3. plating sets a layer thickness as 0.8 micron of Ge on the 2. substrate with mask structure that step obtains15Ga10Te75
Chalcogenide films.
In this particular embodiment, Ge15Ga10Te75The plating of Chalcogenide films is set using existing magnetically controlled sputter method, wherein
The vacuum degree of the sputtering chamber of magnetron sputtering coating system is 2.5 × 10-4Pa, build-up of luminance air pressure are 2.8 pas, magnetron sputtering membrane system
The sputtering pressure of system is 0.27 pa, sputtering power is 27 watts, sputtering time is 2.5 hours, to magnetron sputtering coating system
The volume flow for the argon gas being passed through in sputtering chamber is 45sccm.
4. 3. substrate that step is obtained is completely immersed in organic solvent, the base 3. obtained using organic solvent dissolving step
Photoresist on material, while also having taken away the Ge above photoresist15Ga10Te75When Chalcogenide films, recycle ultrasonic wave clear
It washes 5 minutes, forms the full sulphur system optical waveguide of Te base.
In this particular embodiment, organic solvent is the N-Methyl pyrrolidone that concentration is 99.9%.
Fig. 2 gives the Ge measured using infrared ellipsometer24Sb3Se73Chalcogenide films and Ge15Ga10Te75Chalcogenide films are each
From refractive index and wavelength relation curve.From figure 2 it can be seen that Ge24Sb3Se73Chalcogenide films and Ge15Ga10Te75Sulphur system
The respective refractive index of film is all gradually reduced with the increase of wavelength, and the two refractive index has apparent difference, shows
Ge24Sb3Se73Chalcogenide films and Ge15Ga10Te75Chalcogenide films are suitble to the production of optical waveguide.
Fig. 3 gives to be illustrated using the result that the method for the present invention prepares per stage during the full sulphur system optical waveguide of Te base
Scheme, 1 is chalcogenide glass in Fig. 3, and 2 be Ge-Sb-Se Chalcogenide films, and 4 be photoresist, and 3 be Ge15Ga10Te75Chalcogenide films.
In above-mentioned each embodiment, the thickness of photoresist has no effect on the property of the full sulphur system optical waveguide of the Te base being prepared
Can, thickness generally usually drips several drops on Ge-Sb-Se Chalcogenide films in 1.5 microns, operation, then whirl coating, protects
Card is uniform.
Below in conjunction with theory, the full sulphur system optical waveguide structure of Te base that aforementioned four different embodiment is prepared is carried out
Analysis:
Table 1 gives the full sulphur system optical waveguide structure of the Te base being prepared under different condition and relevant parameter, including sulphur system
Glass (Chg) substrate material, Ge-Sb-Se Chalcogenide films material and thickness and Ge15Ga10Te75The thickness of Chalcogenide films.
The full sulphur system optical waveguide structure of the Te base being prepared under 1 different condition of table and relevant parameter
Fig. 4 gives the cross-sectional view for the full sulphur system optical waveguide structure of Te base that embodiment one is prepared, W1 in Fig. 4
=4 microns, H1=1 microns, H2=1.2 microns.
Fig. 5 a, which gives, exists to Te base shown in Fig. 4 full sulphur system optical waveguide progress emulation experiment using existing simulation software
Wavelength is the mode distributions figure that obtained TE mould is simulated at 4.8 microns；Fig. 5 b gives using existing simulation software to Fig. 4 institute
It is the mode distributions figure that obtained TM mould is simulated at 4.8 microns that the full sulphur system optical waveguide of the Te base shown, which carries out emulation experiment in wavelength,.
The main integrated distribution of electric field be can be seen that from Fig. 5 a and Fig. 5 b in the central part of waveguide, and do not revealed, sufficiently shown
The full sulphur system optical waveguide structure of the Te base that the method for the present invention is prepared is relatively good, thus the Te base that the method for the present invention is prepared is complete
Sulphur system optical waveguide structure is for realizing that a small electric field effective area provides a good light field restriction effect.
Description of the invention and application be it is illustrative, be not wishing to the scope of the present invention being only restricted in above-described embodiment
In.In the case where not departing from spirit and essential characteristics of the invention, the present invention can otherwise, similar material and group
Distribution ratio is realized.Without departing from the scope and spirit of the present invention, it can be carried out to embodiments disclosed herein
He deforms and changes.
Claims (8)
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| CN108793738B (en) * | 2018-07-31 | 2021-12-07 | 清远聚航光学材料有限公司 | Optical film and preparation method thereof |
| CN110488416A (en) * | 2019-07-24 | 2019-11-22 | 苏州辰睿光电有限公司 | A method of making small line width rib waveguide |
| CN118226581A (en) * | 2024-05-21 | 2024-06-21 | 中山大学 | A method for preparing a chalcogenide phase change material heterogeneous integrated waveguide device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112555A (en) * | 1992-09-30 | 1994-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Optical waveguide |
| CN103311424A (en) * | 2013-06-04 | 2013-09-18 | 北京工业大学 | Ge-Ga-Te-S halogen glass micro-nano waveguiding structure intermediate infrared sensor and manufacturing method thereof |
| CN103344606A (en) * | 2013-06-04 | 2013-10-09 | 北京工业大学 | Detection system based on germanium gallium tellurium chalcogenide glass film and building method thereof |
| CN104849804A (en) * | 2015-05-29 | 2015-08-19 | 宁波大学 | Novel annular resonant cavity and preparation method thereof |
-
2016
- 2016-01-22 CN CN201610046599.1A patent/CN105549152B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06112555A (en) * | 1992-09-30 | 1994-04-22 | Nippon Telegr & Teleph Corp <Ntt> | Optical waveguide |
| CN103311424A (en) * | 2013-06-04 | 2013-09-18 | 北京工业大学 | Ge-Ga-Te-S halogen glass micro-nano waveguiding structure intermediate infrared sensor and manufacturing method thereof |
| CN103344606A (en) * | 2013-06-04 | 2013-10-09 | 北京工业大学 | Detection system based on germanium gallium tellurium chalcogenide glass film and building method thereof |
| CN104849804A (en) * | 2015-05-29 | 2015-08-19 | 宁波大学 | Novel annular resonant cavity and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Fabrication of far infrared rib waveguides based on Te-Ge-Ga films deposited by co-thermal evaporation;Stéphanie Albert 等;《Proc. of SPIE》;20080925;第7101卷;第71011N-1~71011N-8页 |
| 硫系玻璃光波导研究进展;陈昱 等;《激光与光电子学进展》;20111013(第11期);第111301-1~111301-5页 |
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