CN105529938A - High-voltage rectification circuit for high-power DC power supply - Google Patents
High-voltage rectification circuit for high-power DC power supply Download PDFInfo
- Publication number
- CN105529938A CN105529938A CN201610028760.2A CN201610028760A CN105529938A CN 105529938 A CN105529938 A CN 105529938A CN 201610028760 A CN201610028760 A CN 201610028760A CN 105529938 A CN105529938 A CN 105529938A
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- Prior art keywords
- diode group
- power
- power supply
- anode
- voltage
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode
- H02M7/068—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode mounted on a transformer
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention relates to a high-voltage rectification circuit for a high-power DC power supply, belonging to the field of a high-power DC power supply. The high-voltage rectification circuit for the high-power DC power supply is characterized that the high-voltage rectification circuit is of a symmetric structure and comprises two full-bridge rectification circuits, wherein the two full-bridge rectification circuits are connected in series, input ends and output ends of the two full-bridge rectification circuits are respectively connected with a RC input absorption circuit and a RC output absorption circuit, and a diode pack formed by connecting two silicon carbide diodes in parallel is connected onto each of four bridge arms of the full-bridge rectification circuits. In the high-voltage rectification circuit, each two of the silicon carbide diodes connected in parallel form the full-bridge rectification circuit, reverse recovery charges cannot be accumulated, the RC absorption circuit is not needed to be connected onto the diode of each bridge arm, the structure of the high-voltage rectification circuit is greatly simplified, and the output of high-voltage direct current is more easily achieved.
Description
Technical field
The present invention relates to high-power DC power supply field, particularly a kind of high-voltage rectifier for high-power DC power supply.
Background technology
At present, the rectification of high-voltage direct current adopts full-bridge rectification technology mostly, mainly utilizes diode to be barricaded as full-bridge circuit.But in actual use, this rectification circuit is difficult to realize zero voltage switch.If when circuit can not realize zero voltage switch, following consequence will be produced; First, due to the existence of switching loss, need the volume increasing radiator; Secondly, there is larger di/dt when switch is opened and fall, large electromagnetic interference will be caused; Moreover due to the Reverse recovery of diode, the electric current wink friendship effect in high frequency transformer secondary leakage inductance, produces voltage overshoot and vibration, on the diode so need add RC absorbing circuit on the diode of each brachium pontis in actual use.
Summary of the invention
The object of the invention is to for the problems referred to above, provide a kind of high-voltage rectifier for high-power DC power supply, its structure is simple, can realize the output of high voltage direct current easily.
The object of the present invention is achieved like this:
A kind of high-voltage rectifier for high-power DC power supply, it is characterized in that, this high-voltage rectifier is symmetrical structure, comprise the full bridge rectifier of two series connection, the input of described two full bridge rectifiers and output are connected to RC respectively and input absorbing circuit and RC output absorption circuit, four brachium pontis of full bridge rectifier are connected to respectively the diode group be made up of two silicon carbide diodes in parallel.
Wherein, described full bridge rectifier comprises the first diode group, the second diode group, the 3rd diode group and the 4th diode group, the anode of described first diode group is connected with the negative electrode of the second diode group, the anode of described 3rd diode group is connected with the negative electrode of the 4th diode group, the negative electrode of described first diode group is connected with the negative electrode of the 3rd diode group, and the anode of described second diode group is connected with the anode of the 4th diode group; It is the input of full bridge rectifier between the anode of described first diode group and the anode of the 3rd diode group; It is the output of full bridge rectifier between the negative electrode of described 3rd diode group and the anode of the 4th diode group.
Wherein, described RC inputs absorbing circuit and comprises the first electric capacity, the second electric capacity, the first resistance and the second resistance, is in series after first, second Capacitance parallel connection described with first, second resistance in parallel.
Wherein, RC output absorption circuit comprises the 3rd electric capacity, the 4th electric capacity, the 3rd resistance and the 4th resistance, is in parallel after described 3rd resistance and the 4th resistant series with the 3rd electric capacity and the 4th electric capacity.
Beneficial effect of the present invention is: adopt silicon carbide diode composition full bridge rectifier in parallel between two in this high-voltage rectifier, can not accumulation QRR, the diode of each brachium pontis need not connect RC absorbing circuit again, enormously simplify the structure of high-voltage rectifier, and more easily realize the output of high voltage direct current.
Accompanying drawing explanation
Fig. 1 is circuit theory diagrams of the present invention.
Embodiment
Below in conjunction with specific embodiments and the drawings, set forth the present invention further.
As shown in Figure 1, a kind of high-voltage rectifier for high-power DC power supply, symmetrically structure, comprise the full bridge rectifier 1 of two series connection, be connected to RC respectively at the input of two full bridge rectifiers 1 and output and input absorbing circuit 2 and RC output absorption circuit 3, four brachium pontis of full bridge rectifier 1 are connected to respectively the diode group be made up of two silicon carbide diodes in parallel.
Full bridge rectifier 1 specifically comprises the first diode group D1, the second diode group D2, the 3rd diode group D3 and the 4th diode group D4.The anode of the first diode group D1 is connected with the negative electrode of the second diode group D2, the anode of the 3rd diode group D3 is connected with the negative electrode of the 4th diode group D4, the negative electrode of the first diode group D1 is connected with the negative electrode of the 3rd diode group D3, and the anode of the second diode group D2 is connected with the anode of the 4th diode group D4.Being the input of full bridge rectifier 1 between the anode of the first diode group D1 and the anode of the 3rd diode group D3, is the output of full bridge rectifier 1 between the negative electrode of the 3rd diode group D3 and the anode of the 4th diode group D4.
RC inputs absorbing circuit 2 and to be in series with first, second resistance R1 and R2 in parallel by first, second electric capacity C1 and C2 of parallel connection and to form.
RC output absorption circuit 3 by the connect the 3rd, the 4th resistance R3 and R4 be in parallel with the 3rd electric capacity C3 and the 4th electric capacity C4 respectively and form.
During use, input termination transformer of each full bridge rectifier in high-voltage rectifier, the output of each full-bridge rectification electricity 1 then respectively connects an inductance.
The present invention adopts silicon carbide diode composition full bridge rectifier in parallel between two, can not accumulation QRR, the diode of each brachium pontis need not connect RC absorbing circuit again, enormously simplify the structure of high-voltage rectifier, more easily realize the output of high voltage direct current, have and reduce the features such as pipe is withstand voltage, efficiency is high, loss is low.
Claims (4)
1. the high-voltage rectifier for high-power DC power supply, it is characterized in that, this high-voltage rectifier is symmetrical structure, comprise the full bridge rectifier (1) of two series connection, the input of described two full bridge rectifiers (1) and output are connected to RC respectively and input absorbing circuit (2) and RC output absorption circuit (3), four brachium pontis of full bridge rectifier (1) are connected to respectively the diode group be made up of two silicon carbide diodes in parallel.
2. a kind of high-voltage rectifier for high-power DC power supply according to claim 1, it is characterized in that, described full bridge rectifier (1) comprises the first diode group (D1), second diode group (D2), 3rd diode group (D3) and the 4th diode group (D4), the anode of described first diode group (D1) is connected with the negative electrode of the second diode group (D2), the anode of described 3rd diode group (D3) is connected with the negative electrode of the 4th diode group (D4), the negative electrode of described first diode group (D1) is connected with the negative electrode of the 3rd diode group (D3), the anode of described second diode group (D2) is connected with the anode of the 4th diode group (D4), it is the input of full bridge rectifier (1) between the anode of described first diode group (D1) and the anode of the 3rd diode group (D3), it is the output of full bridge rectifier (1) between the negative electrode of described 3rd diode group (D3) and the anode of the 4th diode group (D4).
3. a kind of high-voltage rectifier for high-power DC power supply according to claim 1, it is characterized in that, described RC inputs absorbing circuit (2) and comprises the first electric capacity (C1), the second electric capacity (C2), the first resistance (R1) and the second resistance (R2), is in series after described first, second electric capacity (C1, C2) is in parallel with first, second resistance (R1, R2) in parallel.
4. a kind of high-voltage rectifier for high-power DC power supply according to claim 1, it is characterized in that, RC output absorption circuit (3) comprises the 3rd electric capacity (C3), the 4th electric capacity (C4), the 3rd resistance (R3) and the 4th resistance (R4), is in parallel after described 3rd resistance (R3) and the series connection of the 4th resistance (R4) with the 3rd electric capacity (C3) and the 4th electric capacity (C4).
Priority Applications (1)
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CN201610028760.2A CN105529938A (en) | 2016-01-15 | 2016-01-15 | High-voltage rectification circuit for high-power DC power supply |
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CN201610028760.2A CN105529938A (en) | 2016-01-15 | 2016-01-15 | High-voltage rectification circuit for high-power DC power supply |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107947605A (en) * | 2017-12-25 | 2018-04-20 | 黄山硅鼎电子有限公司 | Based on the bridge rectifier that GPP rectification chips are parallel |
CN111371081A (en) * | 2020-04-17 | 2020-07-03 | 上海和宗焊接设备制造有限公司 | Circuit design for reducing peak voltage of diode of cutting machine |
CN114900055A (en) * | 2022-07-12 | 2022-08-12 | 深圳核心医疗科技有限公司 | Wireless charging rectification circuit and wireless charging device |
Citations (4)
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CN201854194U (en) * | 2010-09-26 | 2011-06-01 | 鞍钢股份有限公司 | Remanence absorption circuit device for screwdown contracting brake |
JP2012221743A (en) * | 2011-04-08 | 2012-11-12 | Panasonic Corp | Discharge lamp lighting device |
CN203104284U (en) * | 2013-02-23 | 2013-07-31 | 杭州乐图光电科技有限公司 | Voltage resistance surge protection circuit and switching power supply applying same |
CN205490192U (en) * | 2016-01-15 | 2016-08-17 | 上海控源电子科技有限公司 | A high -pressure rectifier circuit for high -power direct -current power supply |
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2016
- 2016-01-15 CN CN201610028760.2A patent/CN105529938A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN201854194U (en) * | 2010-09-26 | 2011-06-01 | 鞍钢股份有限公司 | Remanence absorption circuit device for screwdown contracting brake |
JP2012221743A (en) * | 2011-04-08 | 2012-11-12 | Panasonic Corp | Discharge lamp lighting device |
CN203104284U (en) * | 2013-02-23 | 2013-07-31 | 杭州乐图光电科技有限公司 | Voltage resistance surge protection circuit and switching power supply applying same |
CN205490192U (en) * | 2016-01-15 | 2016-08-17 | 上海控源电子科技有限公司 | A high -pressure rectifier circuit for high -power direct -current power supply |
Non-Patent Citations (1)
Title |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107947605A (en) * | 2017-12-25 | 2018-04-20 | 黄山硅鼎电子有限公司 | Based on the bridge rectifier that GPP rectification chips are parallel |
CN111371081A (en) * | 2020-04-17 | 2020-07-03 | 上海和宗焊接设备制造有限公司 | Circuit design for reducing peak voltage of diode of cutting machine |
CN114900055A (en) * | 2022-07-12 | 2022-08-12 | 深圳核心医疗科技有限公司 | Wireless charging rectification circuit and wireless charging device |
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Effective date of registration: 20180102 Address after: 243001 Jinshan Road, 1188, Ma'anshan economic and Technological Development Zone, Ma'anshan, Anhui Province, 2 Applicant after: Micro grid technology enli (Anhui) Co., Ltd. Address before: 201103 D, Yishan Road, Minhang District, Minhang District, Shanghai, 2 building (East) Applicant before: Shanghai Kong Yuan Electronic Technology Co., Ltd. |
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Application publication date: 20160427 |