CN106230264A - A kind of high-efficient single direction LLC resonance DC DC translation circuit topological structure - Google Patents

A kind of high-efficient single direction LLC resonance DC DC translation circuit topological structure Download PDF

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Publication number
CN106230264A
CN106230264A CN201610666005.7A CN201610666005A CN106230264A CN 106230264 A CN106230264 A CN 106230264A CN 201610666005 A CN201610666005 A CN 201610666005A CN 106230264 A CN106230264 A CN 106230264A
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CN
China
Prior art keywords
circuit
bridge rectifier
electric capacity
semi
bridge inversion
Prior art date
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Pending
Application number
CN201610666005.7A
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Chinese (zh)
Inventor
高强伟
辛德锋
黄旭
陈哲星
孙广志
侯雪
鞠林
史钧杰
王玉辉
朱汉卿
赵军
刘学
张高磊
苏强
吴俣
赵乾鹏
刘伟
孙宏亮
刘瀚冰
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State Grid Corp of China SGCC
State Grid Tianjin Electric Power Co Ltd
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State Grid Corp of China SGCC
State Grid Tianjin Electric Power Co Ltd
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Application filed by State Grid Corp of China SGCC, State Grid Tianjin Electric Power Co Ltd filed Critical State Grid Corp of China SGCC
Priority to CN201610666005.7A priority Critical patent/CN106230264A/en
Publication of CN106230264A publication Critical patent/CN106230264A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/22Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The present invention relates to a kind of high-efficient single direction LLC resonance DC DC translation circuit topological structure, its technical characterstic is: include half-bridge inversion circuit, high-frequency isolation transformer and Half bridge rectifier circuit;Described half-bridge inversion circuit is connected with Half bridge rectifier circuit by high-frequency isolation transformer;This half-bridge inversion circuit includes three the semi-bridge inversion branch roads being connected in parallel on semi-bridge inversion side positive and negative end, and this Half bridge rectifier circuit includes three the Half bridge rectifier branch roads being connected in parallel on Half bridge rectifier side positive and negative end.The present invention reduces 2 IGBT module and 2 commutation diodes, by reducing switching device, the control mode and the control system that make the unidirectional LLC resonance DC/DC translation circuit of the present invention are become letter by numerous, and then make the cost of composition circuit reduce, improve the efficiency of circuit, and the minimizing due to switching device so that control system and control mode are also simple, reliable.

Description

A kind of high-efficient single direction LLC resonance DC-DC translation circuit topological structure
Technical field
The invention belongs to DC/DC converter technique field, be mainly used in photovoltaic micro and Switching Power Supply, especially a kind of High-efficient single direction LLC resonance DC-DC translation circuit topological structure.
Background technology
In recent years, due to change and the quickening of energy resource consumption speed of environment, increasing scholar begins to focus on rationally, Utilize the energy efficiently.Along with developing rapidly of modern power electronics technology, owing to DC/DC converter technique has Sofe Switch, height The advantages such as power density, device volume are little so that DC/DC conversion has obtained extensively in the field such as Switching Power Supply, photovoltaic micro Application.
Wherein, it is achieved the high power density of DC/DC changer and high efficiency, be DC/DC changer research emphasis;LLC Resonance can be in full-load range, it is achieved the no-voltage of primary side switch device opens (ZVS) and the zero of secondary commutation diode Switch off current (ZCS), owing to switching loss is less, therefore improves switching frequency, it becomes possible to subtract on the basis of holding is high efficiency The volume of little device, increases power density, and therefore DC/DC changer based on LLC resonance receives extensive concern.
At present, in fields such as Switching Power Supply and photovoltaic micro energy storage, it would be desirable to be able to one-way flow, therefore can use unidirectional LLC resonance DC/DC converts, unidirectional LLC resonance DC/DC translation circuit of the prior art, as in figure 2 it is shown, this unidirectional LLC resonance DC/DC translation circuit is connected and composed by full bridge inverter, LLC resonant network resistance, full bridge rectifier.Inverter side uses complete Bridge inversion, rectification side uses full-bridge rectification, when energy single-phase flow, the first IGBT module Q1, the 4th IGBT module Q4With second IGBT module Q2, the 3rd IGBT module Q3Applying dutycycle is the complementary drive signals of 50%, it is achieved inversion function, wherein, and first IGBT module Q1With the 4th IGBT module Q4Driving signal identical, the second IGBT module Q2With the 3rd IGBT module Q3's Driving signal is identical;Full-bridge rectification part uses the 5th commutation diode D5, the 6th commutation diode D6, the 7th rectification two Pole pipe D7, the 8th commutation diode D8Realize full-bridge rectification.
But above-mentioned unidirectional LLC resonance DC/DC translation circuit, has a disadvantage in that (1) switching component quantity is too much, leads Cause circuit efficiency reduces;(2) circuit control system and control mode be complicated, work efficiency and safety coefficient is low, performance is unstable Fixed;(3) construction cost is too high.
Summary of the invention
It is an object of the invention to overcome the deficiencies in the prior art, it is provided that a kind of reasonable in design, simple in construction, construction cost Low and safe and reliable high-efficient single direction LLC resonance DC-DC translation circuit topological structure.
The present invention solves it and technical problem is that and take techniques below scheme to realize:
A kind of high-efficient single direction LLC resonance DC-DC translation circuit topological structure, becomes including half-bridge inversion circuit, high-frequency isolation Depressor and Half bridge rectifier circuit;Described half-bridge inversion circuit is connected with Half bridge rectifier circuit by high-frequency isolation transformer;
This half-bridge inversion circuit includes three the semi-bridge inversion branch roads being connected in parallel on semi-bridge inversion side positive and negative end, wherein, First semi-bridge inversion props up route inverter side filter capacitor CiConstituting, the second semi-bridge inversion props up route the first IGBT module Q1With second IGBT module Q2Being connected in series composition, the 3rd semi-bridge inversion props up route the first electric capacity C1With the second electric capacity C2It is connected in series composition;
This Half bridge rectifier circuit includes three the Half bridge rectifier branch roads being connected in parallel on Half bridge rectifier side positive and negative end;Wherein, First Half bridge rectifier props up route rectification side filter capacitor CoConstituting, the second Half bridge rectifier props up route the 3rd commutation diode D3With Four commutation diode D4Being connected in series composition, the 3rd semi-bridge inversion props up route the 3rd electric capacity C3With the 4th electric capacity C4It is connected in series structure Become.
And, described first IGBT module Q1Anti-and the diode D for band1The oneth IGBT switch;Described second IGBT module Q2Anti-and the diode D for band2The 2nd IGBT switch.
And, the base stage that emitter stage and the 2nd IGBT of a described IGBT switch switchs is connected and being total between the two With node J1By the first inductance L1It is connected with one end of described high-frequency isolation transformer primary side;Described first electric capacity C1's One end and the second electric capacity C2One end be connected and common node J between the two2With described high-frequency isolation transformer primary side The other end is connected;Described second inductance L2It is connected in parallel on the two ends of the primary side of described high-frequency isolation transformer.
And, described 3rd electric capacity C3One end and the 4th electric capacity C4One end be connected and common node between the two J3It is connected with one end of described high-frequency isolation transformer secondary side;Described 3rd commutation diode D3Anode and the 4th rectification two Pole pipe D4Negative electrode be connected and common node J between the two4It is connected with the other end of described high-frequency isolation transformer secondary side Connect.
Advantages of the present invention and good effect be:
1, the present invention proposes the topology of a kind of semi-bridge inversion and Half bridge rectifier, decreases the quantity of switching device, improves The efficiency of circuit, and due to the minimizing of switching device so that control system and control mode are also simple, reliable.
2, the present invention compared to existing technology in unidirectional LLC resonance DC/DC translation circuit, reduce 2 IGBT module and 2 Commutation diode, by reducing switching device, makes control mode and the control of the unidirectional LLC resonance DC/DC translation circuit of the present invention System processed is become letter by numerous, and then makes the cost of composition circuit reduce, the first IGBT module Q simultaneously1, the second IGBT module Q2, the 3rd Commutation diode D3With the 4th commutation diode D4Loss be decreased to unidirectional LLC resonance DC/DC translation circuit in prior art 50%.
3, the present invention is by using the first electric capacity C1With the second electric capacity C2Replace C of the prior artr1Effect, with first Inductance L1Composition LLC resonance, owing to the loss of electric capacity is the least, improves the work efficiency of the present invention.
Accompanying drawing explanation
Fig. 1 is the high-efficient single direction LLC resonance DC-DC translation circuit topology diagram of the present invention;
Fig. 2 is the unidirectional LLC resonance DC/DC translation circuit topology diagram of prior art.
Detailed description of the invention
Below in conjunction with accompanying drawing, the embodiment of the present invention is described in further detail:
A kind of high-efficient single direction LLC resonance DC-DC translation circuit topological structure, as it is shown in figure 1, include half-bridge inversion circuit, High-frequency isolation transformer and Half bridge rectifier circuit;Described half-bridge inversion circuit is by high-frequency isolation transformer and Half bridge rectifier circuit It is connected;
This half-bridge inversion circuit includes three the semi-bridge inversion branch roads being connected in parallel on semi-bridge inversion side positive and negative end, wherein, First semi-bridge inversion props up route inverter side filter capacitor CiConstituting, the second semi-bridge inversion props up route the first IGBT module Q1With second IGBT module Q2Being connected in series composition, the 3rd semi-bridge inversion props up route the first electric capacity C1With the second electric capacity C2It is connected in series composition;Institute State the first IGBT module Q1Anti-and the diode D for band1The oneth IGBT switch;Described second IGBT module Q2Anti-and two poles for band Pipe D2The 2nd IGBT switch.
The base stage of emitter stage and the 2nd IGBT switch of a described IGBT switch is connected and jointly saving between the two Point J1By the first inductance L1It is connected with one end of described high-frequency isolation transformer primary side;Described first electric capacity C1One end With the second electric capacity C2One end be connected and common node J between the two2With another of described high-frequency isolation transformer primary side End is connected;Described second inductance L2It is connected in parallel on the two ends of the primary side of described high-frequency isolation transformer.
This Half bridge rectifier circuit includes three the Half bridge rectifier branch roads being connected in parallel on Half bridge rectifier side positive and negative end;Wherein, First Half bridge rectifier props up route rectification side filter capacitor CoConstituting, the second Half bridge rectifier props up route the 3rd commutation diode D3With Four commutation diode D4Being connected in series composition, the 3rd semi-bridge inversion props up route the 3rd electric capacity C3With the 4th electric capacity C4It is connected in series structure Become.
Described 3rd electric capacity C3One end and the 4th electric capacity C4One end be connected and common node J between the two3With institute The one end stating high-frequency isolation transformer secondary side is connected;Described 3rd commutation diode D3Anode and the 4th commutation diode D4 Negative electrode be connected and common node J between the two4It is connected with the other end of described high-frequency isolation transformer secondary side.
The operation principle of the present invention is:
The unidirectional LLC resonance DC-DC translation circuit topological structure of the present invention is by half-bridge inversion circuit, high-frequency isolation transformer Form with Half bridge rectifier circuit three part.The no-voltage that employing LLC resonance realizes semi-bridge inversion lateral circuit IGBT module is open-minded (ZVS) and quasi-zero-current switching (ZCS), achieve again the ZCS of Half bridge rectifier lateral circuit diode simultaneously;Semi-bridge inversion lateral circuit Using 2 IGBT module to be composed in series a brachium pontis, 2 capacitances in series one brachium pontis of composition, rectification side uses 2 diode strings Joint group becomes a brachium pontis, 2 capacitances in series one brachium pontis of composition, uses IGBT module and the diode of minimum number, to reduce The conduction loss of semiconductor device;High-frequency isolation transformer is used to realize voltage transformation and electrical isolation.
In order to improve the efficiency of topology and reduce cost, the present invention is by a group in full-bridge circuit of the prior art Brachium pontis replaces by 2 capacitances in series;High-efficient single direction LLC resonance DC/DC translation circuit topological structure (as shown in Figure 1) of the present invention Compared with unidirectional LLC resonance DC/DC translation circuit topological structure (as shown in Figure 2) of the prior art, the DC/DC of the present invention becomes Change circuit and lacked 2 IGBT module and 2 commutation diodes, many 4 electric capacity, its work process and functions with in prior art Unidirectional LLC resonance DC/DC translation circuit identical.
The high-efficient single direction LLC resonance DC/DC translation circuit topological structure of the present invention decrease 2 IGBT module and 2 whole Stream diode, is additionally arranged 4 electric capacity;During normal circuit operation, the first electric capacity C1With the second electric capacity C2Replace C in Fig. 1 respectivelyr1's Effect, with the first inductance L1Composition LC resonance;3rd electric capacity C3With the 4th electric capacity C4Form a brachium pontis and the 3rd commutation diode D3With the 4th commutation diode D4The brachium pontis of composition realizes Half bridge rectifier.
The present invention is by reducing by 2 IGBT module and 2 commutation diodes make the control of DC/DC translation circuit of the present invention Mode becomes simply, cost reduces, the first IGBT module Q simultaneously1, the second IGBT module Q2, the 3rd commutation diode D3With the 4th Commutation diode D4Loss be decreased in prior art the 50% of unidirectional LLC resonance DC/DC translation circuit.Damage due to electric capacity Consume the least, improve the work efficiency of the present invention.
During normal circuit operation, the first IGBT module Q1With the second IGBT module Q2Apply the complementation that dutycycle is 50% to drive Dynamic signal, the first IGBT module Q1When opening, the second electric capacity C2With the first inductance L1Composition LC resonance, it is achieved the first IGBT module Q1ZCS and Half bridge rectifier side the 4th commutation diode D4ZCS;Second IGBT module Q2When opening, the first electric capacity C1And L1Group Become LC resonance, it is achieved the second IGBT module Q2ZCS and Half bridge rectifier side the 3rd commutation diode D3ZCS.
The present invention uses IGBT module and the diode of minimum number, to reduce the conduction loss of semiconductor device;Use High-frequency isolation transformer realizes voltage transformation and electrical isolation.
Wherein, the voltage of high-frequency isolation transformer half-bridge inversion circuit and Half bridge rectifier circuit for realizing the present invention becomes Changing and electrical isolation, the leakage inductance on the former limit of this high-frequency isolation transformer is as the resonant inductance L of circuit LC resonance1, this high-frequency isolation The magnetizing inductance of transformator is as the inductance L of circuit realiration ZVS2, this isolating transformer can be designed based on the actual application requirements No-load voltage ratio.
It is emphasized that embodiment of the present invention is illustrative rather than determinate, bag the most of the present invention Include the embodiment being not limited to described in detailed description of the invention, every by those skilled in the art according to technical scheme Other embodiments drawn, also belong to the scope of protection of the invention.

Claims (4)

1. a high-efficient single direction LLC resonance DC-DC translation circuit topological structure, it is characterised in that: include half-bridge inversion circuit, height Frequently isolating transformer and Half bridge rectifier circuit;Described half-bridge inversion circuit passes through high-frequency isolation transformer and Half bridge rectifier circuit phase Connect;
This half-bridge inversion circuit includes three the semi-bridge inversion branch roads being connected in parallel on semi-bridge inversion side positive and negative end, wherein, first Semi-bridge inversion props up route inverter side filter capacitor CiConstituting, the second semi-bridge inversion props up route the first IGBT module Q1With the 2nd IGBT Module Q2Being connected in series composition, the 3rd semi-bridge inversion props up route the first electric capacity C1With the second electric capacity C2It is connected in series composition;
This Half bridge rectifier circuit includes three the Half bridge rectifier branch roads being connected in parallel on Half bridge rectifier side positive and negative end;Wherein, first Half bridge rectifier props up route rectification side filter capacitor CoConstituting, the second Half bridge rectifier props up route the 3rd commutation diode D3Whole with the 4th Stream diode D4Being connected in series composition, the 3rd semi-bridge inversion props up route the 3rd electric capacity C3With the 4th electric capacity C4It is connected in series composition.
A kind of high-efficient single direction LLC resonance DC-DC translation circuit topological structure the most according to claim 1, it is characterised in that: Described first IGBT module Q1Anti-and the diode D for band1The oneth IGBT switch;Described second IGBT module Q2Anti-for band and two Pole pipe D2The 2nd IGBT switch.
A kind of high-efficient single direction LLC resonance DC-DC translation circuit topological structure the most according to claim 2, it is characterised in that: The base stage that emitter stage and the 2nd IGBT of a described IGBT switch switchs is connected and common node J between the two1Pass through First inductance L1It is connected with one end of described high-frequency isolation transformer primary side;Described first electric capacity C1One end with second electricity Hold C2One end be connected and common node J between the two2It is connected with the other end of described high-frequency isolation transformer primary side Connect;Described second inductance L2It is connected in parallel on the two ends of the primary side of described high-frequency isolation transformer.
A kind of high-efficient single direction LLC resonance DC-DC translation circuit topological structure the most according to claim 3, it is characterised in that: Described 3rd electric capacity C3One end and the 4th electric capacity C4One end be connected and common node J between the two3With described high frequency every It is connected from one end of Circuit Fault on Secondary Transformer;Described 3rd commutation diode D3Anode and the 4th commutation diode D4Negative electrode phase Connection and common node J between the two4It is connected with the other end of described high-frequency isolation transformer secondary side.
CN201610666005.7A 2016-08-11 2016-08-11 A kind of high-efficient single direction LLC resonance DC DC translation circuit topological structure Pending CN106230264A (en)

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Publication number Priority date Publication date Assignee Title
CN107681903A (en) * 2017-11-17 2018-02-09 杭州电子科技大学 A kind of two-way L LLC resonance DC DC converters
CN108964473A (en) * 2018-08-07 2018-12-07 中国航空工业集团公司雷华电子技术研究所 A kind of high efficiency high voltage power supply translation circuit
CN110719034A (en) * 2019-11-29 2020-01-21 清华大学 Single-phase half-bridge isolated DC transformer without bridge arm reactor
CN111431416A (en) * 2020-04-18 2020-07-17 河北汇能欣源电子技术有限公司 Three-level LL C converter and control method thereof
CN113556040A (en) * 2021-07-29 2021-10-26 石家庄通合电子科技股份有限公司 Multichannel LLC resonant transformation ware, resonant transformation ware circuit and fill electric pile
WO2022087911A1 (en) * 2020-10-28 2022-05-05 华为技术有限公司 Power source conversion circuit and electronic device

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107681903A (en) * 2017-11-17 2018-02-09 杭州电子科技大学 A kind of two-way L LLC resonance DC DC converters
CN107681903B (en) * 2017-11-17 2020-06-05 杭州电子科技大学 Bidirectional L-LLC resonant DC-DC converter
CN108964473A (en) * 2018-08-07 2018-12-07 中国航空工业集团公司雷华电子技术研究所 A kind of high efficiency high voltage power supply translation circuit
CN110719034A (en) * 2019-11-29 2020-01-21 清华大学 Single-phase half-bridge isolated DC transformer without bridge arm reactor
CN111431416A (en) * 2020-04-18 2020-07-17 河北汇能欣源电子技术有限公司 Three-level LL C converter and control method thereof
WO2022087911A1 (en) * 2020-10-28 2022-05-05 华为技术有限公司 Power source conversion circuit and electronic device
CN113556040A (en) * 2021-07-29 2021-10-26 石家庄通合电子科技股份有限公司 Multichannel LLC resonant transformation ware, resonant transformation ware circuit and fill electric pile

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Application publication date: 20161214