CN102136792A - Boost double-voltage power factor correction circuit utilizing reverse blocking IGBT - Google Patents

Boost double-voltage power factor correction circuit utilizing reverse blocking IGBT Download PDF

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CN102136792A
CN102136792A CN2011100948782A CN201110094878A CN102136792A CN 102136792 A CN102136792 A CN 102136792A CN 2011100948782 A CN2011100948782 A CN 2011100948782A CN 201110094878 A CN201110094878 A CN 201110094878A CN 102136792 A CN102136792 A CN 102136792A
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factor correction
power factor
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马皓
阳彩
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Zhejiang University ZJU
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

本发明公开了一种运用逆阻IGBT的Boost倍压功率因数校正电路,包括:两个输入电感均与输入电源的同一端相连接;两个开关管分别将两个输入电感的另一端连接到输入电源未直接连电感的另一端,从而分别形成充电回路;两个输出整流二极管分别将两个输入电感连接到两个输出滤波电容;两个输出滤波电容可分别连接负载。本发明通过使用逆阻IGBT可以省去输入整流二极管,一方面减少了电路总器件数量,有利于节约成本;另一方面减少了电流路径上的导通半导体器件数量,从而减小了通态损耗,有利于整机效率的提高。而双输入电感的运用,相对使用单电感,电路有更好的EMC性能。

Figure 201110094878

The invention discloses a boost voltage doubler power factor correction circuit using reverse resistance IGBT, comprising: two input inductances are connected with the same end of the input power supply; two switch tubes respectively connect the other ends of the two input inductances to the The input power supply is not directly connected to the other end of the inductor, thus forming charging circuits respectively; two output rectifier diodes respectively connect the two input inductors to the two output filter capacitors; the two output filter capacitors can be connected to the load respectively. The present invention can save the input rectifier diode by using the reverse resistance IGBT, on the one hand, it reduces the total number of components in the circuit, which is beneficial to cost saving; on the other hand, it reduces the number of conduction semiconductor devices on the current path, thereby reducing the on-state loss , which is conducive to improving the efficiency of the whole machine. The application of dual input inductors has better EMC performance than the use of single inductors.

Figure 201110094878

Description

A kind of Boost multiplication of voltage circuit of power factor correction that uses reverse blocking IGBT
Technical field
The present invention relates to circuit of power factor correction, is that a kind of employing reverse blocking IGBT is a switching tube specifically, uses Boost multiplication of voltage power factor correction (PFC) circuit of two input inductances.
Background technology
Single phase power factor correcting circuit is studied widely and is used at present, wherein is typically Boost circuit of power factor correction shown in Figure 1 the most.And require the application scenario of dual output voltage for some, as inversion partly is the ups system of half-bridge structure, owing to be difficult to obtain comparatively stable midpoint potential, this typical B oost circuit of power factor correction is not very suitable, and the Boost circuit of power factor correction of three level can satisfy this kind application just.
As shown in Figure 2, it is the circuit topology that proposes in the paper delivered such as Fred C.Lee " Single-phase Three-Level Boost Power Factor Correction Converter (in:Proceedings of Tenth Annual Applied Power Electronics Conference and Exposition; 1995.APEC ' 95.pp.434-439.) ", this topology has lower device voltage stress with respect to typical B oost circuit of power factor correction, and switching loss reduces.But the same with typical B oost circuit of power factor correction, what this circuit topology had prime equally does not control rectifier bridge, and input voltage is rectified into the steamed bun peak voltage.And do not control the existence of rectifier bridge, and can increase the on-state loss of system to a certain extent, especially for the situation of low-voltage and high-current input, can influence the overall efficiency of circuit.
In order to eliminate the influence of rectifier bridge, people such as Gang Yao have proposed a kind of not with three level Boost circuit of power factor correction of rectifier bridge, as shown in Figure 3 in paper " A ZVT PWM Three Level Boost Converter for Power Factor Preregulator (in:Proceedings of IEEEPower Electronics Specialists Conference; 2007.PESC 2007.pp.768-772.) ".The circuit that this circuit is shown in Figure 2 relatively owing to there is not a rectifier bridge, has reduced by a diode in the conduction path that constitutes with the input power supply, and the circuit on-state loss can reduce, and system effectiveness can be improved to some extent.Do not need not control rectifier bridge though it should be noted that this circuit, still need two input rectifying diodes.With regard to the on-state loss aspect, this circuit provides a kind of thinking for reducing system's on-state loss, and also as can be seen the Boost circuit of power factor correction of three level still have improved space in this respect.
Summary of the invention
The present invention proposes a kind of Boost multiplication of voltage circuit of power factor correction that uses reverse blocking IGBT, circuit structure has been simplified in the utilization of reverse blocking IGBT, do not need the input rectifying diode, make circuit have the advantage of low on-state loss, and the EMC performance of circuit has been optimized in the use of dual input inductance.
A kind of Boost multiplication of voltage circuit of power factor correction that uses reverse blocking IGBT comprises:
Two Boost PFC inductance (first input inductance L 1, the second input inductance L 2), all with input power supply V sSame end be connected;
Two switching tube (first switching tube S 1, second switch pipe S 2), the other end with two inductance is connected to input power supply V respectively sDirectly do not connect the other end of inductance, thereby form charge circuit respectively;
Two output rectifier diode (first output rectifier diode D 1, the second output rectifier diode D 2), respectively with the first input inductance L 1, the second input inductance L 2Be connected to two output filter capacitors (first output filter capacitor C 1, the second output filter capacitor C 2); Output filter capacitor can connect load (the first load R respectively 1, the first load R 1).
Described switching tube (the first switching tube S 1, second switch pipe S 2) that use is the reverse blocking IGBT with reverse voltage blocking ability; Input inductance is two, is respectively the first input inductance L 1, the second input inductance L 2, all be connected with the same end of power supply.
The described first switching tube S 1, the first output rectifier diode D 1With the first input inductance L 1Only at positive half power frequency period work, second switch pipe S 2, the second output rectifier diode D 2With the second input inductance L 2Only in negative half power frequency period work, the alternation of two parts circuit realizes power factor correction.
The present invention utilizes the reverse voltage blocking ability of reverse blocking IGBT, bears reverse voltage and block in switching tube IGBT does not carry out half power frequency period of switch motion, thereby do not need to add extra input rectifying diode.This topological structure is simple, only needs four semiconductor device, helps the reduction of system constructing cost; Only there is a semiconductor device in the circuit run duration on the current path, reduced on-state loss, helps the raising of system effectiveness.And the use of two inductance helps obtaining comparatively good electromagnetic compatibility (EMC) performance.
Description of drawings
Fig. 1 is a typical B oost circuit of power factor correction.
Fig. 2 has the three level Boost circuit of power factor correction that prime is not controlled rectifier bridge in the prior art.
Fig. 3 is three level Boost circuit of power factor correction of tape input rectifier diode in the prior art.
Fig. 4 is a kind of Boost multiplication of voltage circuit of power factor correction that uses reverse blocking IGBT of the present invention.
Fig. 5 is the waveform of a power frequency period of the input voltage of Boost multiplication of voltage circuit of power factor correction of the present invention and two inductive currents.
Fig. 6 (a) is a Boost multiplication of voltage circuit of power factor correction among Fig. 4, in positive half power frequency period of input voltage, and switching tube S 1Conducting, input inductance L 1, L 2The circulation path of electric current.
Fig. 6 (b) is a Boost multiplication of voltage circuit of power factor correction among Fig. 4, in positive half power frequency period of input voltage, and switching tube S 1Turn-off input inductance L 1, L 2The circulation path of electric current.
Fig. 6 (c) is a Boost multiplication of voltage circuit of power factor correction among Fig. 4, in negative half power frequency period of input voltage, and switching tube S 2Conducting, input inductance L 1, L 2The circulation path of electric current.
Fig. 6 (d) is a Boost multiplication of voltage circuit of power factor correction among Fig. 4, in negative half power frequency period of input voltage, and switching tube S 2Turn-off input inductance L 1, L 2The circulation path of electric current.
Embodiment
As shown in Figure 4, two Boost inductance (first input inductance L 1, the second input inductance L 2), all with input power supply V sSame end be connected;
The first switching tube S 1, second switch pipe S 2Employing has the reverse blocking IGBT of reverse voltage blocking ability, respectively with the first input inductance L 1, the second input inductance L 2The other end be connected to input power supply V sDirectly do not connect the other end of inductance, thereby form charge circuit respectively;
The first output rectifier diode D 1, the second output rectifier diode D 2, respectively with the first input inductance L 1, the second input inductance L 2Be connected to the first output filter capacitor C 1, the second output filter capacitor C 2The first output filter capacitor C 1, the second output filter capacitor C 2Can connect the first load R respectively 1, the second load R 2
As shown in Figure 5, the first input inductance L 1, the second input inductance L 2Alternation in half power frequency period respectively is so circuit divides positive and negative half power frequency period two operation phase.
When Fig. 6 (a) and (b) were depicted as positive half power frequency period of input voltage, circuit working shown in Figure 4 is the first input inductance L in Phase I 1The flow graph of electric current, this stage second switch pipe S 2Be in off state always.
Phase I: the first switching tube S 1Open-minded, the first input inductance L 1Energy storage, inductive current flow to and are v s-L 1-S 1-v s, shown in Fig. 6 (a); The first switching tube S 1Turn-off the first input inductance L 1The electric energy that stores transmits to output, and inductive current flows to and is v s-L 1-D 1-C 1-v s, shown in Fig. 6 (b).
Shown in Fig. 6 (c), (d) for negative half power frequency period of input voltage the time, circuit working shown in Figure 4 is the second input inductance L in Phase 2The flow graph of electric current, this stage first switching tube S 1Be in off state always.
Phase: second switch pipe S 2Open-minded, the second input inductance L 2Energy storage, inductive current flow to and are v s-S 2-L 2-v s, shown in Fig. 6 (c); Second switch pipe S 2Turn-off the second input inductance L 2The electric energy that stores transmits to output, and inductive current flows to and is v s-C 2-D 2-L 2-v s, shown in Fig. 6 (d).
Circuit is by two stage alternate runs, and each stage inductive current is followed the tracks of input voltage, thereby can both guarantee input current tracking input voltage at whole power frequency period, realizes the correction to input current waveform, reaches high power factor correction.

Claims (3)

1.一种运用逆阻IGBT的Boost倍压功率因数校正电路,其特征在于:包括:1. A Boost voltage doubling power factor correction circuit using an anti-resistance IGBT, characterized in that: comprising: 第一输入电感L1、第二输入电感L2,均与输入电源Vs的同一端相连接;The first input inductance L 1 and the second input inductance L 2 are both connected to the same terminal of the input power supply V s ; 第一开关管S1、第二开关管S2分别将第一输入电感L1、第二输入电感L2的另一端连接到输入电源Vs未直接连电感的另一端,从而分别形成充电回路;The first switching tube S 1 and the second switching tube S 2 respectively connect the other end of the first input inductor L 1 and the second input inductor L 2 to the other end of the input power supply V s that is not directly connected to the inductor, thereby forming charging circuits respectively ; 第一输出整流二极管D1、第二输出整流二极管D2,分别将第一输入电感L1、第二输入电感L2连接到第一输出滤波电容C1、第二输出滤波电容C2;第一输出滤波电容C1、第二输出滤波电容C2可分别连接第一负载R1、第二负载R2The first output rectifying diode D 1 and the second output rectifying diode D 2 respectively connect the first input inductance L 1 and the second input inductance L 2 to the first output filter capacitor C 1 and the second output filter capacitor C 2 ; An output filter capacitor C 1 and a second output filter capacitor C 2 can be connected to the first load R 1 and the second load R 2 respectively. 2.一种如权利要求1所述的Boost倍压功率因数校正电路,其特征在于:第一开关管S1、第二开关管S2为逆阻IGBT。2. A Boost voltage doubling power factor correction circuit according to claim 1, characterized in that: the first switching tube S 1 and the second switching tube S 2 are reverse resistance IGBTs. 3.一种如权利要求1所述的Boost倍压功率因数校正电路,其特征在于:第一开关管S1、第一输出整流二极管D1、第一输入电感L1仅在正半个工频周期工作;第二开关管S2、第二输出整流二极管D2、第二输入电感L2仅在负半个工频周期工作。3. A boost voltage doubling power factor correction circuit as claimed in claim 1, characterized in that: the first switch tube S 1 , the first output rectifier diode D 1 , and the first input inductance L 1 are only in the positive half working The second switch tube S 2 , the second output rectifier diode D 2 , and the second input inductor L 2 only work in the negative half of the power frequency cycle.
CN2011100948782A 2011-04-15 2011-04-15 Boost double-voltage power factor correction circuit utilizing reverse blocking IGBT Pending CN102136792A (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103296884A (en) * 2013-06-20 2013-09-11 南京航空航天大学 Low-ripple double-output non-isolation boosting direct-current converter and control method thereof
CN103904917A (en) * 2012-12-26 2014-07-02 中兴通讯股份有限公司 AC rectification voltage-boosting circuit and rectification voltage-boosting device
CN103916008A (en) * 2014-04-22 2014-07-09 扬州大学 Output capacitance voltage-sharing control system and control method for three-level DC converter
CN104092396A (en) * 2014-06-30 2014-10-08 南京航空航天大学 A single-inductance double-Boost inverter and its control method
CN104218809A (en) * 2013-05-29 2014-12-17 伊顿制造(格拉斯哥)有限合伙莫尔日分支机构 A circuit device integrating power factor correction and DC-DC conversion
CN105515417A (en) * 2016-01-26 2016-04-20 南京航空航天大学 Double-output single-phase PFC convertor and combined type power conversion system and control method thereof
CN107959430A (en) * 2017-11-14 2018-04-24 西北工业大学 A kind of voltage-type high-frequency inverter circuit topological structure
CN115483823A (en) * 2022-09-21 2022-12-16 钰泰半导体股份有限公司 Switching power factor corrector and AC/DC converter

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GANG YAO, HAIYANG HE, YAN DENG, XIANGNING HE: "A ZVT PWM Three Level Boost Converter for Power Factor Preregulator", 《POWER ELECTRONICS SPECIALISTS CONFERENCE,2006.PESC 》 *
肖华锋、谢少军: "采用逆阻型IGBT的零电流开关PWM电流源型半桥变换器", 《中国电机工程学报》 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103904917A (en) * 2012-12-26 2014-07-02 中兴通讯股份有限公司 AC rectification voltage-boosting circuit and rectification voltage-boosting device
CN104218809A (en) * 2013-05-29 2014-12-17 伊顿制造(格拉斯哥)有限合伙莫尔日分支机构 A circuit device integrating power factor correction and DC-DC conversion
CN104218809B (en) * 2013-05-29 2019-01-22 伊顿制造(格拉斯哥)有限合伙莫尔日分支机构 A kind of circuit device of integrated power factor correcting and DC-dc conversion
CN103296884A (en) * 2013-06-20 2013-09-11 南京航空航天大学 Low-ripple double-output non-isolation boosting direct-current converter and control method thereof
CN103916008A (en) * 2014-04-22 2014-07-09 扬州大学 Output capacitance voltage-sharing control system and control method for three-level DC converter
CN104092396A (en) * 2014-06-30 2014-10-08 南京航空航天大学 A single-inductance double-Boost inverter and its control method
CN105515417A (en) * 2016-01-26 2016-04-20 南京航空航天大学 Double-output single-phase PFC convertor and combined type power conversion system and control method thereof
CN107959430A (en) * 2017-11-14 2018-04-24 西北工业大学 A kind of voltage-type high-frequency inverter circuit topological structure
CN115483823A (en) * 2022-09-21 2022-12-16 钰泰半导体股份有限公司 Switching power factor corrector and AC/DC converter
CN115483823B (en) * 2022-09-21 2024-01-19 钰泰半导体股份有限公司 Switching power factor corrector and AC/DC converter

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Application publication date: 20110727