CN111371081A - Circuit design for reducing peak voltage of diode of cutting machine - Google Patents
Circuit design for reducing peak voltage of diode of cutting machine Download PDFInfo
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- CN111371081A CN111371081A CN202010303185.9A CN202010303185A CN111371081A CN 111371081 A CN111371081 A CN 111371081A CN 202010303185 A CN202010303185 A CN 202010303185A CN 111371081 A CN111371081 A CN 111371081A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
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Abstract
The invention relates to the technical field of embedded development, and discloses a circuit design for reducing peak voltage of a diode of a cutting machine, which solves the technical problem that the conventional reverse peak voltage of the diode causes damage to a plasma cutting power supply and comprises a transformer T1, an inductor L1, an inductor L2, a diode D5, a diode D6, a diode D7 and a diode D8. According to the technical scheme, the circuit which is simple in structure and low in cost and can greatly reduce the peak voltage of the rectifier diode of the plasma cutting machine is designed, so that the purposes of prolonging the service life of the plasma cutting machine and improving the reliability are achieved.
Description
Technical Field
The invention relates to the technical field of embedded development, in particular to a circuit design for reducing peak voltage of a diode of a cutting machine.
Background
The plasma cutting machine is a machine which utilizes high heat and high pressure to ionize air and then form electric arcs so as to melt workpieces. The power supply of the plasma cutting machine is a power supply system of the plasma cutting machine.
In the prior art, the output voltage of the plasma cutting power supply is necessarily high due to the characteristic that gas needs to be broken down to form an arc. The presence of reverse recovery current in the rectifier diode of the plasma cutting machine causes di/dt to cause a voltage spike. The conventional rectifier diode of the plasma cutting machine usually needs a higher voltage withstanding value and has larger volume. Not only the cost is improved, but also the service life of the rectifier diode is reduced, and simultaneously the EMC (battery compatibility) problem of the power supply of the plasma cutting machine is caused.
Disclosure of Invention
Aiming at the technical problem that the reverse peak voltage of the diode provided by the background technology damages a plasma cutting power supply, the invention aims to design a circuit which has simple structure and low cost and greatly reduces the peak voltage of the rectifier diode of the plasma cutting machine, thereby achieving the purposes of prolonging the service life of the plasma cutting machine and improving the reliability.
In order to achieve the purpose, the invention provides the following technical scheme:
a circuit design for reducing spike voltage of diodes of a cutting machine comprises a transformer T1, an inductor L1, an inductor L2, a diode D5, a diode D6, a diode D7 and a diode D8, wherein connecting terminals No. ① and No. ② are arranged on one side of a primary coil of the transformer T1, the connecting terminals No. ① and No. ② are respectively connected with an input terminal J1 and a J2, connecting terminals No. ③, No. ④, No. ② 0 and No. ② 1 are arranged on one side of a secondary coil of the transformer T1, terminals No. ③ and No. ④ of a transformer T1 serve as one ends and are connected with an output terminal J3, and the terminals No. ⑤ and No. ⑥ on the other two;
a terminal ⑥ of the transformer T1 is connected to one end of an inductor L1, the other end of the inductor L1 is connected to the anode of a diode D5, the cathode of a diode D5 is connected to the anode of a diode D6, and the cathode of a diode D6 is connected to an output terminal J4;
terminal ⑤ of transformer T1 is connected to one end of inductor L2, the other end of inductor L2 is connected to the anode of diode D7, the cathode of diode D7 is connected to the cathode of diode D8, and the cathode of diode D8 is connected to output terminal J4.
Through the technical scheme, the two output ports ⑤⑥ of the transformer T1 are respectively connected with an inductor, and in practical use, a saturated inductor is generally adopted, has the characteristics of easy saturation and poor energy storage, presents high impedance at the moment of current rise, and can inhibit current spike generated when a diode is reversely recovered.
Two fast recovery diodes, such as diode D5 and diode D6, are then used on each path at the output of transformer T1. Each diode splits half the output voltage. However, due to the existence of leakage inductance and junction capacitance, not only is high-frequency oscillation easily caused to cause voltage spike, but also voltage division of the two diodes is uneven, so that the spike voltage of the diode D5 is much larger than that of the diode D6. At this time, the loop area formed by the diode D5, the diode D6 and the heat sink is strictly controlled, and the devices in the same batch are adopted, so that the consistency of various parameter performances is ensured, and the optimal effect of inhibiting the current spike generated during the diode reverse recovery can be achieved.
The invention is further configured to: the inductor L1 and the inductor L2 are both JMS patch type inductors with easy saturation and poor energy storage.
Through the technical scheme, the saturated inductor has the characteristics of easy saturation and poor energy storage, presents high impedance at the moment of current rising, and can inhibit current spikes generated when the diode reversely recovers.
The invention is further configured to: the diode D5, the diode D6, the diode D7 and the diode D8 are all MBR40200PT type diodes with high power and fast recovery performance.
By the technical scheme, the high power aims at bearing voltage spikes generated by the plasma cutting power supply and is not easy to damage; meanwhile, the fast recovery function is selected to quickly respond to the next peak voltage, so that a good inhibition effect is achieved.
The invention is further configured to: a first voltage absorption circuit is arranged at two ends of the diode D5;
a second voltage absorption circuit is arranged at two ends of the diode D6;
a third voltage absorption circuit is arranged at two ends of the diode D7;
a fourth voltage absorbing circuit is provided across diode D8.
The invention is further configured to: the first voltage absorption circuit comprises a capacitor C1, a resistor R1 and a diode D1, wherein the anode of the diode D5 is connected with one end of a capacitor C1 and one end of a resistor R1 respectively, the other end of the capacitor C1 and the other end of the resistor R1 are connected with the cathode of the diode D1, and the anode of a diode D1 is connected with the cathode of the diode D5 and the anode of a diode D6 simultaneously;
the second voltage absorption circuit comprises a capacitor C2, a resistor R2 and a diode D2, wherein the anode of the diode D6 is connected with one end of a capacitor C2 and one end of a resistor R2 respectively, the other end of the capacitor C2 and the other end of the resistor R2 are connected with the cathode of the diode D2, and the anode of the diode D2 is connected with the cathode of the diode D6;
the third voltage absorption circuit comprises a capacitor C3, a resistor R3 and a diode D3, wherein the anode of the diode D7 is connected with one end of a capacitor C3 and one end of a resistor R3 respectively, the other end of the capacitor C3 and the other end of the resistor R3 are connected with the cathode of the diode D3, and the anode of the diode D3 is connected with the cathode of the diode D7 and the anode of the diode D8 simultaneously;
the fourth voltage absorption circuit comprises a capacitor C4, a resistor R4 and a diode D4, wherein the anode of the diode D8 is connected with one end of a capacitor C4 and one end of a resistor R4 respectively, the other end of the capacitor C4 and the other end of the resistor R4 are connected with the cathode of the diode D4, and the anode of the diode D4 is connected with the cathode of the diode D8.
Through the technical scheme, an RCD absorption circuit is added to each of the diode D5, the diode D6, the diode D7 and the diode D8 and is used for reducing voltage spikes of the rectifier diode, when the rectifier diode is turned off, the RCD absorption circuit works and stores the spikes in the capacitor.
The invention is further configured to: the capacitor C1, the capacitor C2, the capacitor C3 and the capacitor C4 are all configured as metalized film type capacitors.
The invention is further configured to: the resistor R1, the resistor R2, the resistor R3, and the resistor R4 are each configured as a resistor having a resistance greater than 10k ohms.
Through the technical scheme, the resistor R1, the resistor R2, the resistor R3 and the resistor R4 are all large in resistance, and waste of a high-power cement resistor due to the fact that a small-resistance resistor is used in a common RCD absorption loop is avoided.
In conclusion, the invention has the following beneficial effects:
(1) the reverse peak voltage of the diode is inhibited, so that the service life of the plasma cutting machine can be prolonged and the reliability of the plasma cutting machine can be improved;
(2) because the reverse peak voltage of the diode is restrained, the size of the plasma cutting machine can be reduced, and the occupied space during installation is reduced;
(3) the volume of the plasma cutting machine is reduced, so that the production cost is greatly reduced.
Drawings
Fig. 1 is a circuit design connection diagram for reducing the voltage spike of a diode of a cutting machine.
Detailed Description
The present invention will be described in further detail with reference to examples and drawings, but the present invention is not limited to these examples.
A circuit design for reducing the peak voltage of diodes of a cutting machine is disclosed, as shown in FIG. 1, the circuit design comprises a transformer T1, an inductor L1, an inductor L2, a diode D5, a diode D6, a diode D7, and a diode D8., wherein connection terminals No. ① and No. ② are arranged on one side of a primary coil of a transformer T1, connection terminals No. ① and No. ② are respectively connected with an input terminal J1 and a J2, connection terminals No. 2, No. 20 and No. 2 are arranged on one side of a secondary coil of the transformer T2, the connection terminals No. 2 and No. 2 of the transformer T2 are respectively connected with an output terminal J2, the other two ends 2 and No. 2 are completely symmetrical, the terminal No. 2 of the transformer T2 is connected with one end of the inductor L2, the anode of the diode D2 is connected with the cathode of the diode D2, the diode D2 is connected with the anode of the diode D2, and the cathode of the diode D2 is connected with the anode of the diode D2, and the diode D2.
The inductor L1 and the inductor L2 are both JMS patch type inductors which are easy to saturate and have poor energy storage.
The diode D5, the diode D6, the diode D7 and the diode D8 are MBR40200PT type diodes with high power and fast recovery performance.
Two output ports of the transformer T1 are respectively connected with a saturated inductor, the saturated inductors are an inductor L1 and an inductor L2, the saturated inductors have the characteristics of easy saturation and poor energy storage, high impedance is presented at the moment of current rising, and current spikes generated when the diode is reversely recovered can be restrained.
Two fast recovery diodes are used on each path of the output end of the transformer T1, which are diode D5, diode D6, diode D7 and diode D8. Each diode splits half the output voltage. However, due to the existence of leakage inductance and junction capacitance, not only is high-frequency oscillation easily caused to cause voltage spike, but also voltage division of the two diodes is uneven, so that the spike voltage of the diode D5 is much larger than that of the diode D6. The loop area formed by the two diodes and the heat sink should be strictly controlled, and the same batch of devices should be used to ensure consistent performance of various parameters. An RCD absorption circuit is added on each diode.
The RCD snubber circuit is used to reduce rectifier diode voltage spikes. When the rectifier diode is turned off, the RCD absorption loop operates and stores the spike in the capacitor. Meanwhile, the resistor can have a larger resistance value, so that the waste of a high-power cement resistor caused by using a small-resistance resistor in a common RC absorption loop is avoided.
Specifically, in order to improve the stability and the suppression performance of the circuit, RCD absorption circuits are respectively arranged at two ends of the diode D5, the diode D6, the diode D7 and the diode D8, and the RCD absorption circuits are respectively a first voltage absorption circuit, a second voltage absorption circuit, a third voltage absorption circuit and a fourth voltage absorption circuit.
The first voltage absorption circuit comprises a capacitor C1, a resistor R1 and a diode D1, wherein the anode of the diode D5 is connected with one end of a capacitor C1 and one end of a resistor R1 respectively, the other end of the capacitor C1 and the other end of the resistor R1 are connected with the cathode of the diode D1, and the anode of a diode D1 is connected with the cathode of the diode D5 and the anode of a diode D6 simultaneously.
The second voltage absorption circuit comprises a capacitor C2, a resistor R2 and a diode D2, wherein the anode of the diode D6 is connected with one end of a capacitor C2 and one end of a resistor R2 respectively, the other end of the capacitor C2 and the other end of the resistor R2 are connected with the cathode of the diode D2, and the anode of the diode D2 is connected with the cathode of the diode D6.
The third voltage absorption circuit comprises a capacitor C3, a resistor R3 and a diode D3, wherein the anode of the diode D7 is connected with one end of a capacitor C3 and one end of a resistor R3 respectively, the other end of the capacitor C3 and the other end of the resistor R3 are connected with the cathode of the diode D3, and the anode of the diode D3 is connected with the cathode of the diode D7 and the anode of the diode D8 simultaneously.
The fourth voltage absorption circuit comprises a capacitor C4, a resistor R4 and a diode D4, wherein the anode of the diode D8 is connected with one end of a capacitor C4 and one end of a resistor R4 respectively, the other end of the capacitor C4 and the other end of the resistor R4 are connected with the cathode of the diode D4, and the anode of the diode D4 is connected with the cathode of the diode D8.
The capacitor C1, the capacitor C2, the capacitor C3 and the capacitor C4 are all configured as metalized thin film capacitors.
The resistor R1, the resistor R2, the resistor R3 and the resistor R4 are all configured to be resistors with the resistance value larger than 10k ohms.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.
Claims (7)
1. A circuit design for reducing spike voltage of diodes of a cutting machine comprises a transformer T1, an inductor L1, an inductor L2, a diode D5, a diode D6, a diode D7 and a diode D8, and is characterized in that a primary coil side of the transformer T1 is provided with No. ① and No. ② connecting terminals, the No. ① and No. ② connecting terminals are respectively connected with an input terminal J1 and J2, a secondary coil side of the transformer T1 is provided with No. ③, No. ④, No. ② 0 and No. ② 1 connecting terminals, No. ③ and No. ④ terminals of a transformer T1 are used as one ends and are connected with an output terminal J3, and the No. ⑤ and No. ⑥ at two ends are completely symmetrical;
a terminal ⑥ of the transformer T1 is connected to one end of an inductor L1, the other end of the inductor L1 is connected to the anode of a diode D5, the cathode of a diode D5 is connected to the anode of a diode D6, and the cathode of a diode D6 is connected to an output terminal J4;
terminal ⑤ of transformer T1 is connected to one end of inductor L2, the other end of inductor L2 is connected to the anode of diode D7, the cathode of diode D7 is connected to the cathode of diode D8, and the cathode of diode D8 is connected to output terminal J4.
2. The circuit design for reducing the peak voltage of the diode of the cutting machine according to claim 1, wherein: the inductor L1 and the inductor L2 are both JMS patch type inductors with easy saturation and poor energy storage.
3. The circuit design for reducing the peak voltage of the diode of the cutting machine according to claim 1, wherein: the diode D5, the diode D6, the diode D7 and the diode D8 are all MBR40200PT type diodes with high power and fast recovery performance.
4. A circuit design for reducing the peak voltage of diodes of cutting machines according to any one of claims 1 to 3, characterized in that:
a first voltage absorption circuit is arranged at two ends of the diode D5;
a second voltage absorption circuit is arranged at two ends of the diode D6;
a third voltage absorption circuit is arranged at two ends of the diode D7;
a fourth voltage absorbing circuit is provided across diode D8.
5. The circuit design for reducing the peak voltage of the diode of the cutting machine according to claim 4, wherein: the first voltage absorption circuit comprises a capacitor C1, a resistor R1 and a diode D1, wherein the anode of the diode D5 is connected with one end of a capacitor C1 and one end of a resistor R1 respectively, the other end of the capacitor C1 and the other end of the resistor R1 are connected with the cathode of the diode D1, and the anode of a diode D1 is connected with the cathode of the diode D5 and the anode of a diode D6 simultaneously;
the second voltage absorption circuit comprises a capacitor C2, a resistor R2 and a diode D2, wherein the anode of the diode D6 is connected with one end of a capacitor C2 and one end of a resistor R2 respectively, the other end of the capacitor C2 and the other end of the resistor R2 are connected with the cathode of the diode D2, and the anode of the diode D2 is connected with the cathode of the diode D6;
the third voltage absorption circuit comprises a capacitor C3, a resistor R3 and a diode D3, wherein the anode of the diode D7 is connected with one end of a capacitor C3 and one end of a resistor R3 respectively, the other end of the capacitor C3 and the other end of the resistor R3 are connected with the cathode of the diode D3, and the anode of the diode D3 is connected with the cathode of the diode D7 and the anode of the diode D8 simultaneously;
the fourth voltage absorption circuit comprises a capacitor C4, a resistor R4 and a diode D4, wherein the anode of the diode D8 is connected with one end of a capacitor C4 and one end of a resistor R4 respectively, the other end of the capacitor C4 and the other end of the resistor R4 are connected with the cathode of the diode D4, and the anode of the diode D4 is connected with the cathode of the diode D8.
6. The circuit design for reducing the peak voltage of the diode of the cutting machine according to claim 5, wherein: the capacitor C1, the capacitor C2, the capacitor C3 and the capacitor C4 are all configured as metalized film type capacitors.
7. The circuit design for reducing the peak voltage of the diode of the cutting machine according to claim 5, wherein: the resistor R1, the resistor R2, the resistor R3, and the resistor R4 are each configured as a resistor having a resistance greater than 10k ohms.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010303185.9A CN111371081A (en) | 2020-04-17 | 2020-04-17 | Circuit design for reducing peak voltage of diode of cutting machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010303185.9A CN111371081A (en) | 2020-04-17 | 2020-04-17 | Circuit design for reducing peak voltage of diode of cutting machine |
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| CN111371081A true CN111371081A (en) | 2020-07-03 |
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| CN202010303185.9A Pending CN111371081A (en) | 2020-04-17 | 2020-04-17 | Circuit design for reducing peak voltage of diode of cutting machine |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1186375A (en) * | 1996-11-22 | 1998-07-01 | 三星电子株式会社 | Peak reverse voltage removing circuit |
| CN204304818U (en) * | 2014-11-28 | 2015-04-29 | 东莞市奥源电子科技有限公司 | There is the power circuit of peak absorbing ability |
| CN105529938A (en) * | 2016-01-15 | 2016-04-27 | 上海控源电子科技有限公司 | High-voltage rectification circuit for high-power DC power supply |
| CN206962714U (en) * | 2017-07-24 | 2018-02-02 | 中车青岛四方车辆研究所有限公司 | DC D/C power main circuits |
| CN209664538U (en) * | 2019-01-30 | 2019-11-22 | 佛山康仕达焊接设备有限公司 | A kind of manual welding, argon arc welding and plasma cut three use main loop circuit |
-
2020
- 2020-04-17 CN CN202010303185.9A patent/CN111371081A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1186375A (en) * | 1996-11-22 | 1998-07-01 | 三星电子株式会社 | Peak reverse voltage removing circuit |
| CN204304818U (en) * | 2014-11-28 | 2015-04-29 | 东莞市奥源电子科技有限公司 | There is the power circuit of peak absorbing ability |
| CN105529938A (en) * | 2016-01-15 | 2016-04-27 | 上海控源电子科技有限公司 | High-voltage rectification circuit for high-power DC power supply |
| CN206962714U (en) * | 2017-07-24 | 2018-02-02 | 中车青岛四方车辆研究所有限公司 | DC D/C power main circuits |
| CN209664538U (en) * | 2019-01-30 | 2019-11-22 | 佛山康仕达焊接设备有限公司 | A kind of manual welding, argon arc welding and plasma cut three use main loop circuit |
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Application publication date: 20200703 |