CN105515380A - Voltage stablizing power supply circuit applied to flyback switching power supply control chip - Google Patents
Voltage stablizing power supply circuit applied to flyback switching power supply control chip Download PDFInfo
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- CN105515380A CN105515380A CN201510900986.2A CN201510900986A CN105515380A CN 105515380 A CN105515380 A CN 105515380A CN 201510900986 A CN201510900986 A CN 201510900986A CN 105515380 A CN105515380 A CN 105515380A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/1563—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators without using an external clock
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Abstract
The present invention provides a voltage stabilizing power supply circuit applied to flyback switching power supply control chip. The circuit comprises four parts which are an input voltage port, a PTAT reference current circuit, a high-voltage voltage stabilizing power supply circuit, and a low-voltage voltage stabilizing power supply circuit. The working voltage outputted by the circuit has two paths, and due to different voltage values, the stable working voltage can be provided for different electricity consumption modules of the switching power supply control chip. Through designing the corresponding voltage stabilizing module and current limiting module, the stability of output is fully ensured, the influence of input voltage and external temperature change is small, the accuracy is high, and the requirement of the voltage stabilizing power supply of the flyback switching power supply control chip is fully satisfied.
Description
Technical field
The present invention relates to the design of Switching Power Supply control chip, in particular, be applied to the design of the voltage stabilizing power supplying circuit of inverse-excitation type switch power-supply control chip.
Background technology
Switching Power Supply is by the mode of feedback loop control switch pipe, and the voltage of stable output, for relevant power consumption equipment.Equally, the operation of Switching Power Supply itself also needs stable input voltage, and the voltage needed for disparate modules is not quite similar.Such as, the drive circuit of switching tube needs higher burning voltage to work, and the operation of PWM generator circuit then needs lower burning voltage.The voltage stabilizing power supplying circuit generally adopted in current Switching Power Supply control chip can meet power reguirements substantially, but along with the change of input voltage and ambient temperature, its precision still can not be satisfactory.The present invention is directed to the problems referred to above, devise the voltage stabilizing power supplying circuit being applied to inverse-excitation type switch power-supply control chip, simultaneously for Switching Power Supply control chip provides two kinds of stable operating voltages, and higher precision can be had when input voltage and ambient temperature change.
Summary of the invention
Technical problem to be solved by this invention there is provided a kind of voltage stabilizing power supplying circuit being applied to inverse-excitation type switch power-supply control chip.
Technical scheme of the present invention is as follows: the voltage stabilizing power supplying circuit being applied to inverse-excitation type switch power-supply control chip comprises four parts, and it is respectively input voltage port, PTAT reference current circuit, high voltage stabilizing power supply circuits, low pressure voltage stabilizing power supplying circuit.Wherein input voltage port provides input voltage to high voltage stabilizing power supply circuits and PTAT reference current circuit.PATA reference current circuit exports No. 1 reference current to high voltage stabilizing power supply circuits, and exports No. 2 reference currents to low pressure voltage stabilizing power supplying circuit.High voltage stabilizing power supply circuits export No. 1 operating voltage and use to high voltage electric module, and No. 1 operating voltage are input in low pressure voltage stabilizing power supplying circuit.Low pressure voltage stabilizing power supplying circuit exports No. 2 operating voltages and uses to low pressure electricity consumption module.
In inverse-excitation type switch power-supply control chip voltage stabilizing power supplying circuit, high voltage stabilizing power supply circuits are used for No. 1 relatively high operating voltage of output voltage values.No. 1 operating voltage uses, on the other hand as input voltage supply low pressure voltage stabilizing power supplying circuit as stable operating voltage supply Switching Power Supply control chip high voltage electric module on the one hand.High voltage stabilizing power supply circuits comprise input voltage port, No. 1 reference current input port, No. 1 operating voltage output port, 1 to No. 8 metal-oxide-semiconductor, 1 to No. 2 transistor, 1 to No. 4 resistance, No. 1 electric capacity.Wherein, No. 1 transistor AND gate No. 1 resistance composition current-limiting circuit, the electric current limited in No. 8 metal-oxide-semiconductors exceedes predetermined value.No. 1 electric capacity is connected with No. 1 operating voltage output port, has the stable effect exported.The expression formula of No. 1 operating voltage that high voltage stabilizing power supply circuits export is as follows:
Wherein, V
hbe the magnitude of voltage of No. 1 operating voltage, I
1be the current value of electric current in No. 2 resistance, R
1be the resistance of No. 1 resistance, R
2be the resistance of No. 2 resistance, R
3be the resistance of No. 3 resistance, R
4be the resistance of No. 4 resistance, V
bebe the base emitter voltage value of No. 2 transistors, I
hfor the current value of high voltage stabilizing power supply circuits output current.
In high voltage stabilizing power supply circuits, input voltage port connects the source electrode of No. 1 metal-oxide-semiconductor, and the grid of No. 1 metal-oxide-semiconductor connects the grid of No. 3 metal-oxide-semiconductors, and the drain electrode of No. 1 metal-oxide-semiconductor connects the source electrode of No. 2 metal-oxide-semiconductors.No. 1 reference current input port connects the drain electrode of No. 2 metal-oxide-semiconductors, and the grid of No. 2 metal-oxide-semiconductors connects the grid of No. 4 metal-oxide-semiconductors.The drain electrode of No. 7 metal-oxide-semiconductors connects the drain electrode of No. 6 metal-oxide-semiconductors, and the source electrode of No. 7 metal-oxide-semiconductors connects the upper end of No. 2 resistance.The lower end of No. 2 resistance connects the upper end of No. 3 resistance, and the lower end of No. 3 resistance connects the upper end of No. 4 resistance, the lower end ground connection of No. 4 resistance.The base stage of No. 2 transistors connects the lower end of No. 3 resistance, and the collector electrode of No. 2 transistors connects the lower end of No. 2 resistance, the grounded emitter of No. 2 transistors.The grid of No. 8 metal-oxide-semiconductors connects the drain electrode of No. 6 metal-oxide-semiconductors, and the drain electrode of No. 8 metal-oxide-semiconductors connects the source electrode of No. 5 metal-oxide-semiconductors, and the source electrode of No. 8 metal-oxide-semiconductors connects the upper end of No. 1 resistance.The base stage of No. 1 transistor connects the upper end of No. 1 resistance, and the collector electrode of No. 1 transistor connects the grid of No. 8 metal-oxide-semiconductors, and the emitter of No. 1 transistor connects the lower end of No. 1 resistance.No. 1 operating voltage output port connects the lower end of No. 1 resistance, and the upper end of No. 1 electric capacity connects No. 1 operating voltage output port, the lower end ground connection of No. 1 electric capacity.
In inverse-excitation type switch power-supply control chip voltage stabilizing power supplying circuit, low pressure voltage stabilizing power supplying circuit is used for No. 2 relatively low operating voltages of output voltage values for relevant electricity consumption module.Low pressure voltage stabilizing power supplying circuit comprises No. 1 operating voltage input port, No. 2 reference current input ports, No. 2 operating voltage output ports, 9 to No. 13 metal-oxide-semiconductors, 3 to No. 4 transistors, 5 to No. 10 resistance, No. 2 electric capacity.Wherein, No. 3 transistors, No. 11 metal-oxide-semiconductors, No. 12 metal-oxide-semiconductors and No. 9 resistance composition current-limiting circuits, the output current of restriction low pressure voltage stabilizing power supplying circuit exceedes predetermined value.No. 10 resistance and No. 2 electric capacity form frequency compensated circuit, the output voltage of stabilizing low voltage voltage stabilizing power supplying circuit.The expression formula of No. 2 operating voltages that low pressure voltage stabilizing power supplying circuit exports is as follows:
Wherein, V
lbe the magnitude of voltage of No. 2 operating voltages, I
2be the current value of No. 2 reference currents, R
5be the resistance of No. 5 resistance, R
6be the resistance of No. 6 resistance, R
7be the resistance of No. 7 resistance, R
10be the resistance of No. 10 resistance, V
bebe the base emitter voltage value of No. 4 transistors, I
lfor the current value of low pressure voltage stabilizing power supplying circuit output current.The output voltage of high voltage stabilizing power supply circuits is carried out further voltage stabilizing as its input voltage by low pressure voltage stabilizing power supplying circuit, and therefore its output has higher precision, can meet low pressure electricity consumption module to the requirement of stable operating voltage.
In low pressure voltage stabilizing power supplying circuit, No. 1 operating voltage input port connects the source electrode of No. 9 metal-oxide-semiconductors, and the grid of No. 9 metal-oxide-semiconductors connects the grid of No. 10 metal-oxide-semiconductors, and the drain electrode of No. 9 metal-oxide-semiconductors connects the collector electrode of No. 4 transistors.No. 2 reference current input ports connect the drain electrode of No. 10 metal-oxide-semiconductors, and the source electrode of No. 10 metal-oxide-semiconductors connects the source electrode of No. 9 metal-oxide-semiconductors.The collector electrode of No. 4 transistors connects the drain electrode of No. 9 metal-oxide-semiconductors, and the emitter of No. 4 transistors connects the upper end of No. 7 resistance, the lower end ground connection of No. 7 resistance.The collector electrode of No. 3 transistors connects the drain electrode of No. 12 metal-oxide-semiconductors, and the emitter of No. 3 transistors connects the upper end of No. 5 resistance, and the lower end of No. 5 resistance connects the upper end of No. 6 resistance, the lower end ground connection of No. 6 resistance.The grid of No. 13 metal-oxide-semiconductors connects No. 2 reference current inputs, and the drain electrode of No. 13 metal-oxide-semiconductors connects the base stage of No. 3 transistors, and the base stage of No. 3 transistors connects the upper end of No. 9 resistance, and the lower end of No. 9 resistance connects the upper end of No. 5 resistance.No. 2 operating voltage output ports connect the lower end of No. 10 resistance, and the upper end of No. 10 resistance connects the lower end of No. 9 resistance.The upper end of No. 2 electric capacity connects No. 2 operating voltage output ports, the lower end ground connection of No. 2 electric capacity.
In inverse-excitation type switch power-supply control chip voltage stabilizing power supplying circuit, PTAT reference current circuit mainly for generation of the electric current with temperature change in direct ratio, and is input in high voltage stabilizing power supply circuits and low pressure voltage stabilizing power supplying circuit as reference current.PTAT reference current circuit comprises input voltage port, No. 1 reference current output port, No. 2 reference current output ports, 14 to No. 31 metal-oxide-semiconductors, 5 to No. 8 transistors, 11 to No. 12 resistance, No. 1 diodes.Wherein input voltage port connects the drain electrode of No. 31 metal-oxide-semiconductors, and the source electrode of No. 31 metal-oxide-semiconductors connects the source electrode of No. 16 metal-oxide-semiconductors, and the grid of No. 31 metal-oxide-semiconductors connects the source electrode of No. 14 metal-oxide-semiconductors.The upper end of No. 11 resistance connects input voltage port, and the lower end of No. 11 resistance connects the drain electrode of No. 14 metal-oxide-semiconductors.The source electrode of No. 14 metal-oxide-semiconductors connects the drain electrode of No. 15 metal-oxide-semiconductors, and the source electrode of No. 15 metal-oxide-semiconductors connects the negative electrode of No. 1 diode, the plus earth of No. 1 diode.The collector electrode of No. 5 transistors connects the drain electrode of No. 16 metal-oxide-semiconductors, and the base stage of No. 5 transistors connects the base stage of No. 7 transistors, and the emitter of No. 5 transistors connects the collector electrode of No. 6 transistors.The base stage of No. 6 transistors connects the collector electrode of No. 8 transistors, and the emitter of No. 6 transistors connects the upper end of No. 12 resistance, the lower end ground connection of No. 12 resistance.The collector electrode of No. 7 transistors connects the drain electrode of No. 17 metal-oxide-semiconductors, and the emitter of No. 7 transistors connects the collector electrode of No. 8 transistors.The base stage of No. 8 transistors connects the drain electrode of No. 6 transistors, the grounded emitter of No. 8 transistors.No. 1 reference current output port connects the drain electrode of No. 29 metal-oxide-semiconductors, and the grid of No. 29 metal-oxide-semiconductors connects the drain electrode of No. 25 metal-oxide-semiconductors.The drain electrode of No. 30 metal-oxide-semiconductors connects the source electrode of No. 29 metal-oxide-semiconductors, and the grid of No. 30 metal-oxide-semiconductors connects the drain electrode of No. 26 metal-oxide-semiconductors, the source ground of No. 30 metal-oxide-semiconductors.No. 2 reference current output ports connect the drain electrode of No. 27 metal-oxide-semiconductors, and the grid of No. 27 metal-oxide-semiconductors connects the drain electrode of No. 25 metal-oxide-semiconductors.The drain electrode of No. 28 metal-oxide-semiconductors connects the source electrode of No. 27 metal-oxide-semiconductors, and the grid of No. 28 metal-oxide-semiconductors connects the drain electrode of No. 26 metal-oxide-semiconductors, the source ground of No. 28 metal-oxide-semiconductors.
The present invention is the voltage stabilizing power supplying circuit of inverse-excitation type switch power-supply control chip.Its operating voltage exported has two-way, and magnitude of voltage is different, can provide operating voltage for the different electricity consumption module of Switching Power Supply control chip.The present invention, by corresponding Voltage stabilizing module and current limliting module, fully ensure that its stability exported, and the impact by input voltage and ambient temperature change is very little, has higher precision, fully meets the power demands of inverse-excitation type switch power-supply control chip.
Accompanying drawing explanation
Fig. 1 is system block diagram of the present invention;
Fig. 2 is the circuit diagram of high voltage stabilizing power supply circuits of the present invention;
Fig. 3 is the circuit diagram of low pressure voltage stabilizing power supplying circuit of the present invention;
Fig. 4 is the circuit diagram of PTAT reference current circuit of the present invention;
Embodiment
For the ease of understanding the present invention, below in conjunction with the drawings and specific embodiments, the present invention will be described in more detail.Give preferred embodiment of the present invention in this specification and accompanying drawing thereof, but the present invention can realize in many different forms, is not limited to the embodiment described by this specification.On the contrary, provide the object of these embodiments be make the understanding of disclosure of the present invention more comprehensively thorough.
It should be noted that, when a certain element is fixed on another element, comprise and this element is directly fixed on this another element, or this element is fixed on this another element by least one other element placed in the middle.When an element connects another element, comprise and this element is directly connected to this another element, or this element is connected to this another element by least one other element placed in the middle.
As shown in Figure 1, the present invention includes four parts, it is respectively input voltage port, PTAT reference current circuit, high voltage stabilizing power supply circuits, low pressure voltage stabilizing power supplying circuit.Wherein input voltage port provides input voltage vin to high voltage stabilizing power supply circuits and PTAT reference current circuit.PATA reference current circuit exports No. 1 reference current Ia1 to high voltage stabilizing power supply circuits, and exports No. 2 reference current Ia2 to low pressure voltage stabilizing power supplying circuit.High voltage stabilizing power supply circuits export No. 1 operating voltage Vh and use to high voltage electric module, and are input in low pressure voltage stabilizing power supplying circuit by No. 1 operating voltage Vh.Low pressure voltage stabilizing power supplying circuit exports No. 2 operating voltage Vr and uses to low pressure electricity consumption module.
As shown in Figure 2, high voltage stabilizing power supply circuits are used for No. 1 relatively high operating voltage Vh of output voltage values.No. 1 operating voltage Vh mono-aspect uses, on the other hand as input voltage supply low pressure voltage stabilizing power supplying circuit as stable operating voltage supply Switching Power Supply control chip high voltage electric module.High voltage stabilizing power supply circuits comprise input voltage port VIN, No. 1 reference current input port IAI1, No. 1 operating voltage output port VHO, metal-oxide-semiconductor M1 to M8, transistor Q1 to Q2, resistance R1 to R4, electric capacity C1.Wherein, transistor Q1 and resistance R1 forms current-limiting circuit, and the electric current in restriction metal-oxide-semiconductor M8 exceedes predetermined value.Electric capacity C1 is connected with No. 1 operating voltage output port VHO, has the stable effect exported.The expression formula of No. 1 operating voltage Vh that high voltage stabilizing power supply circuits export is as follows:
Wherein, V
hbe the magnitude of voltage of No. 1 operating voltage Vh, I
1for the current value of electric current in resistance R2, R
1for the resistance of resistance R1, R
2for the resistance of resistance R2, R
3for the resistance of resistance R3, R
4for the resistance of resistance R4, V
befor the base emitter voltage value of transistor Q2, I
hfor the current value of high voltage stabilizing power supply circuits output current.No. 1 operating voltage Vh that high voltage stabilizing power supply circuits export has higher precision, and its impact by input voltage and ambient temperature change is very little.Such as, when input voltage vin is 48V, ambient temperature excursion is-30 DEG C to 120 DEG C, and output current Ih excursion is 0 to 11mA, then the excursion of No. 1 operating voltage Vh is 9.53V to 10.62V.
In high voltage stabilizing power supply circuits, input voltage port VIN connects the source electrode of metal-oxide-semiconductor M1, and the grid of metal-oxide-semiconductor M1 connects the grid of metal-oxide-semiconductor M3, and the drain electrode of metal-oxide-semiconductor M1 connects the source electrode of metal-oxide-semiconductor M2.No. 1 reference current input port IAI1 connects the drain electrode of metal-oxide-semiconductor M2, and the grid of metal-oxide-semiconductor M2 connects the grid of metal-oxide-semiconductor M4.The drain electrode of metal-oxide-semiconductor M7 connects the drain electrode of metal-oxide-semiconductor M6, the upper end of the source electrode contact resistance R2 of metal-oxide-semiconductor M7.The upper end of the lower end contact resistance R3 of resistance R2, the upper end of the lower end contact resistance R4 of resistance R3, the lower end ground connection of resistance R4.The lower end of the base stage contact resistance R3 of transistor Q2, the lower end of the collector electrode contact resistance R2 of transistor Q2, the grounded emitter of transistor Q2.The grid of metal-oxide-semiconductor M8 connects the drain electrode of metal-oxide-semiconductor M6, and the drain electrode of metal-oxide-semiconductor M8 connects the source electrode of metal-oxide-semiconductor M5, the upper end of the source electrode contact resistance R1 of metal-oxide-semiconductor M8.The upper end of the base stage contact resistance R1 of transistor Q1, the collector electrode of transistor Q1 connects the grid of metal-oxide-semiconductor M8, the lower end of the emitter contact resistance R1 of transistor Q1.The lower end of No. 1 operating voltage output port VHO contact resistance R1, the upper end of electric capacity C1 connects No. 1 operating voltage output port VHO, the lower end ground connection of electric capacity C1.
As shown in Figure 3, low pressure voltage stabilizing power supplying circuit is used for No. 2 relatively low operating voltage Vr of output voltage values for relevant electricity consumption module.Low pressure voltage stabilizing power supplying circuit comprises No. 1 operating voltage input port VHI, No. 2 reference current input port IAI2, No. 2 operating voltage output port VLO, metal-oxide-semiconductor M9 to M13, transistor Q3 to Q4, resistance R5 to R10, electric capacity C2.Wherein, transistor Q3, metal-oxide-semiconductor M11, metal-oxide-semiconductor M12 and resistance R9 form current-limiting circuit, and the output current of restriction low pressure voltage stabilizing power supplying circuit exceedes predetermined value.Resistance R10 and electric capacity C2 forms frequency compensated circuit, the output voltage of stabilizing low voltage voltage stabilizing power supplying circuit.The expression formula of No. 2 operating voltage Vr that low pressure voltage stabilizing power supplying circuit exports is as follows:
Wherein, V
lbe the magnitude of voltage of No. 2 operating voltage Vr, I
2be the current value of No. 2 reference current Ia2, R
5for the resistance of resistance R5, R
6for the resistance of resistance R6, R
7for the resistance of resistance R7, R
10for the resistance of resistance R10, V
befor the base emitter voltage value of transistor Q4, I
lfor the current value of low pressure voltage stabilizing power supplying circuit output current.The output voltage Vh of high voltage stabilizing power supply circuits is carried out further voltage stabilizing as its input voltage by low pressure voltage stabilizing power supplying circuit, and therefore its output has higher precision, can meet low pressure electricity consumption module to the requirement of stable operating voltage.Such as, when input voltage vin is 48V, ambient temperature excursion is-30 DEG C to 120 DEG C, and output current Ir excursion is 0 to 6mA, then the excursion of No. 2 operating voltage Vr is 4.92V to 5.11V.
In low pressure voltage stabilizing power supplying circuit, No. 1 operating voltage input port VHI connects the source electrode of metal-oxide-semiconductor M9, and the grid of metal-oxide-semiconductor M9 connects the grid of metal-oxide-semiconductor M10, and the drain electrode of metal-oxide-semiconductor M9 connects the collector electrode of transistor Q4.No. 2 reference current input port IAI2 connect the drain electrode of metal-oxide-semiconductor M10, and the source electrode of metal-oxide-semiconductor M10 connects the source electrode of metal-oxide-semiconductor M9.The collector electrode of transistor Q4 connects the drain electrode of metal-oxide-semiconductor M9, the upper end of the emitter contact resistance R7 of transistor Q4, the lower end ground connection of resistance R7.The collector electrode of transistor Q3 connects the drain electrode of metal-oxide-semiconductor M12, the upper end of the emitter contact resistance R5 of transistor Q3, the upper end of the lower end contact resistance R6 of resistance R5, the lower end ground connection of resistance R6.The grid of metal-oxide-semiconductor M13 connects No. 2 reference current input IAI2, and the drain electrode of metal-oxide-semiconductor M13 connects the base stage of transistor Q3, the upper end of the base stage contact resistance R9 of transistor Q3, the upper end of the lower end contact resistance R5 of resistance R9.The lower end of No. 2 operating voltage output port VLO contact resistance R10, the lower end of the upper end contact resistance R9 of resistance R10.The upper end of electric capacity C2 connects No. 2 operating voltage output port VLO, the lower end ground connection of electric capacity C2.
As shown in Figure 4, PTAT reference current circuit mainly for generation of the electric current with temperature change in direct ratio, and is input in high voltage stabilizing power supply circuits and low pressure voltage stabilizing power supplying circuit as reference current.PTAT reference current circuit comprises input voltage port VIN, No. 1 reference current output port IAO1, No. 2 reference current output port IAO2, metal-oxide-semiconductor M14 to M31, transistor Q5 to Q8, resistance R11 to R12, diode D1.Wherein input voltage port VIN connects the drain electrode of metal-oxide-semiconductor M31, and the source electrode of metal-oxide-semiconductor M31 connects the source electrode of metal-oxide-semiconductor M16, and the grid of metal-oxide-semiconductor M31 connects the source electrode of metal-oxide-semiconductor M14.The upper end of resistance R11 connects input voltage port VIN, and the lower end of resistance R11 connects the drain electrode of metal-oxide-semiconductor M14.The source electrode of metal-oxide-semiconductor M14 connects the drain electrode of metal-oxide-semiconductor M15, and the source electrode of metal-oxide-semiconductor M15 connects the negative electrode of diode D1, the plus earth of diode D1.The collector electrode of transistor Q5 connects the drain electrode of metal-oxide-semiconductor M16, and the base stage of transistor Q5 connects the base stage of transistor Q7, and the emitter of transistor Q5 connects the collector electrode of transistor Q6.The base stage of transistor Q6 connects the collector electrode of transistor Q8, the upper end of the emitter contact resistance R12 of transistor Q6, the lower end ground connection of resistance R12.The collector electrode of transistor Q7 connects the drain electrode of metal-oxide-semiconductor M17, and the emitter of transistor Q7 connects the collector electrode of transistor Q8.The base stage of transistor Q8 connects the drain electrode of transistor Q6, the grounded emitter of transistor Q8.No. 1 reference current output port IAO1 connects the drain electrode of metal-oxide-semiconductor M29, and the grid of metal-oxide-semiconductor M29 connects the drain electrode of metal-oxide-semiconductor M25.The drain electrode of metal-oxide-semiconductor M30 connects the source electrode of metal-oxide-semiconductor M29, and the grid of metal-oxide-semiconductor M30 connects the drain electrode of metal-oxide-semiconductor M26, the source ground of metal-oxide-semiconductor M30.No. 2 reference current output port IAO2 connect the drain electrode of metal-oxide-semiconductor M27, and the grid of metal-oxide-semiconductor M27 connects the drain electrode of metal-oxide-semiconductor M25.The drain electrode of metal-oxide-semiconductor M28 connects the source electrode of metal-oxide-semiconductor M27, and the grid of metal-oxide-semiconductor M28 connects the drain electrode of metal-oxide-semiconductor M26, the source ground of metal-oxide-semiconductor M28.
It should be noted that, above-mentioned each technical characteristic continues combination mutually, is formed not in above-named various embodiment, is all considered as the scope that specification of the present invention is recorded; Further, for those of ordinary skills, can be improved according to the above description or convert, and all these improve and convert the protection range that all should belong to claims of the present invention.
Claims (7)
1. be applied to the voltage stabilizing power supplying circuit of inverse-excitation type switch power-supply control chip, it is characterized in that, it comprises input voltage port, PTAT reference current circuit, high voltage stabilizing power supply circuits, low pressure voltage stabilizing power supplying circuit;
Input voltage port provides input voltage to high voltage stabilizing power supply circuits and PTAT reference current circuit;
PATA reference current circuit exports No. 1 reference current to high voltage stabilizing power supply circuits, and exports No. 2 reference currents to low pressure voltage stabilizing power supplying circuit;
High voltage stabilizing power supply circuits export No. 1 operating voltage and use to high voltage electric module, and are input in low pressure voltage stabilizing power supplying circuit by No. 1 operating voltage;
Low pressure voltage stabilizing power supplying circuit exports No. 2 operating voltages and uses to low pressure electricity consumption module.
2. be applied to the voltage stabilizing power supplying circuit of inverse-excitation type switch power-supply control chip according to claim 1, it is characterized in that, high voltage stabilizing power supply circuits comprise input voltage port, No. 1 reference current input port, No. 1 operating voltage output port, 1 to No. 8 metal-oxide-semiconductor, 1 to No. 2 transistor, 1 to No. 4 resistance, No. 1 electric capacity.
3. be applied to the voltage stabilizing power supplying circuit of inverse-excitation type switch power-supply control chip according to claim 2, it is characterized in that, input voltage port connects the source electrode of No. 1 metal-oxide-semiconductor, and the grid of No. 1 metal-oxide-semiconductor connects the grid of No. 3 metal-oxide-semiconductors, and the drain electrode of No. 1 metal-oxide-semiconductor connects the source electrode of No. 2 metal-oxide-semiconductors;
No. 1 reference current input port connects the drain electrode of No. 2 metal-oxide-semiconductors, and the grid of No. 2 metal-oxide-semiconductors connects the grid of No. 4 metal-oxide-semiconductors;
The drain electrode of No. 7 metal-oxide-semiconductors connects the drain electrode of No. 6 metal-oxide-semiconductors, and the source electrode of No. 7 metal-oxide-semiconductors connects the upper end of No. 2 resistance;
The lower end of No. 2 resistance connects the upper end of No. 3 resistance, and the lower end of No. 3 resistance connects the upper end of No. 4 resistance, the lower end ground connection of No. 4 resistance;
The base stage of No. 2 transistors connects the lower end of No. 3 resistance, and the collector electrode of No. 2 transistors connects the lower end of No. 2 resistance, the grounded emitter of No. 2 transistors;
The grid of No. 8 metal-oxide-semiconductors connects the drain electrode of No. 6 metal-oxide-semiconductors, and the drain electrode of No. 8 metal-oxide-semiconductors connects the source electrode of No. 5 metal-oxide-semiconductors, and the source electrode of No. 8 metal-oxide-semiconductors connects the upper end of No. 1 resistance;
The base stage of No. 1 transistor connects the upper end of No. 1 resistance, and the collector electrode of No. 1 transistor connects the grid of No. 8 metal-oxide-semiconductors, and the emitter of No. 1 transistor connects the lower end of No. 1 resistance;
No. 1 operating voltage output port connects the lower end of No. 1 resistance, and the upper end of No. 1 electric capacity connects No. 1 operating voltage output port, the lower end ground connection of No. 1 electric capacity.
4. be applied to the voltage stabilizing power supplying circuit of inverse-excitation type switch power-supply control chip according to claim 1, it is characterized in that, low pressure voltage stabilizing power supplying circuit comprises No. 1 operating voltage input port, No. 2 reference current input ports, No. 2 operating voltage output ports, 9 to No. 13 metal-oxide-semiconductors, 3 to No. 4 transistors, 5 to No. 10 resistance, No. 2 electric capacity.
5. be applied to the voltage stabilizing power supplying circuit of inverse-excitation type switch power-supply control chip according to claim 4, it is characterized in that, No. 1 operating voltage input port connects the source electrode of No. 9 metal-oxide-semiconductors, the grid of No. 9 metal-oxide-semiconductors connects the grid of No. 10 metal-oxide-semiconductors, and the drain electrode of No. 9 metal-oxide-semiconductors connects the collector electrode of No. 4 transistors;
No. 2 reference current input ports connect the drain electrode of No. 10 metal-oxide-semiconductors, and the source electrode of No. 10 metal-oxide-semiconductors connects the source electrode of No. 9 metal-oxide-semiconductors;
The collector electrode of No. 4 transistors connects the drain electrode of No. 9 metal-oxide-semiconductors, and the emitter of No. 4 transistors connects the upper end of No. 7 resistance, the lower end ground connection of No. 7 resistance;
The collector electrode of No. 3 transistors connects the drain electrode of No. 12 metal-oxide-semiconductors, and the emitter of No. 3 transistors connects the upper end of No. 5 resistance, and the lower end of No. 5 resistance connects the upper end of No. 6 resistance, the lower end ground connection of No. 6 resistance;
The grid of No. 13 metal-oxide-semiconductors connects No. 2 reference current inputs, and the drain electrode of No. 13 metal-oxide-semiconductors connects the base stage of No. 3 transistors, and the base stage of No. 3 transistors connects the upper end of No. 9 resistance, and the lower end of No. 9 resistance connects the upper end of No. 5 resistance;
No. 2 operating voltage output ports connect the lower end of No. 10 resistance, and the upper end of No. 10 resistance connects the lower end of No. 9 resistance;
The upper end of No. 2 electric capacity connects No. 2 operating voltage output ports, the lower end ground connection of No. 2 electric capacity.
6. be applied to the voltage stabilizing power supplying circuit of inverse-excitation type switch power-supply control chip according to claim 1, it is characterized in that, PTAT reference current circuit comprises input voltage port, No. 1 reference current output port, No. 2 reference current output ports, 14 to No. 31 metal-oxide-semiconductors, 5 to No. 8 transistors, 11 to No. 12 resistance, No. 1 diodes.
7. be applied to the voltage stabilizing power supplying circuit of inverse-excitation type switch power-supply control chip according to claim 6, it is characterized in that, input voltage port connects the drain electrode of No. 31 metal-oxide-semiconductors, and the source electrode of No. 31 metal-oxide-semiconductors connects the source electrode of No. 16 metal-oxide-semiconductors, and the grid of No. 31 metal-oxide-semiconductors connects the source electrode of No. 14 metal-oxide-semiconductors;
The upper end of No. 11 resistance connects input voltage port, and the lower end of No. 11 resistance connects the drain electrode of No. 14 metal-oxide-semiconductors;
The source electrode of No. 14 metal-oxide-semiconductors connects the drain electrode of No. 15 metal-oxide-semiconductors, and the source electrode of No. 15 metal-oxide-semiconductors connects the negative electrode of No. 1 diode, the plus earth of No. 1 diode;
The collector electrode of No. 5 transistors connects the drain electrode of No. 16 metal-oxide-semiconductors, and the base stage of No. 5 transistors connects the base stage of No. 7 transistors, and the emitter of No. 5 transistors connects the collector electrode of No. 6 transistors;
The base stage of No. 6 transistors connects the collector electrode of No. 8 transistors, and the emitter of No. 6 transistors connects the upper end of No. 12 resistance, the lower end ground connection of No. 12 resistance;
The collector electrode of No. 7 transistors connects the drain electrode of No. 17 metal-oxide-semiconductors, and the emitter of No. 7 transistors connects the collector electrode of No. 8 transistors;
The base stage of No. 8 transistors connects the drain electrode of No. 6 transistors, the grounded emitter of No. 8 transistors;
No. 1 reference current output port connects the drain electrode of No. 29 metal-oxide-semiconductors, and the grid of No. 29 metal-oxide-semiconductors connects the drain electrode of No. 25 metal-oxide-semiconductors;
The drain electrode of No. 30 metal-oxide-semiconductors connects the source electrode of No. 29 metal-oxide-semiconductors, and the grid of No. 30 metal-oxide-semiconductors connects the drain electrode of No. 26 metal-oxide-semiconductors, the source ground of No. 30 metal-oxide-semiconductors;
No. 2 reference current output ports connect the drain electrode of No. 27 metal-oxide-semiconductors, and the grid of No. 27 metal-oxide-semiconductors connects the drain electrode of No. 25 metal-oxide-semiconductors;
The drain electrode of No. 28 metal-oxide-semiconductors connects the source electrode of No. 27 metal-oxide-semiconductors, and the grid of No. 28 metal-oxide-semiconductors connects the drain electrode of No. 26 metal-oxide-semiconductors, the source ground of No. 28 metal-oxide-semiconductors.
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| CN201510900986.2A CN105515380B (en) | 2015-12-05 | 2015-12-05 | Voltage-stabilizing power supply circuit applied to flyback switching power supply control chip |
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| CN201510900986.2A CN105515380B (en) | 2015-12-05 | 2015-12-05 | Voltage-stabilizing power supply circuit applied to flyback switching power supply control chip |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201365192Y (en) * | 2009-01-07 | 2009-12-16 | 深圳市明微电子股份有限公司 | High voltage and low voltage converting circuit |
| CN102692946A (en) * | 2012-06-15 | 2012-09-26 | 钜泉光电科技(上海)股份有限公司 | Current reference circuit |
| CN203596756U (en) * | 2013-11-30 | 2014-05-14 | 成都岷创科技有限公司 | Power supply circuit used in AC-DC primary side control chip |
| CN104793682A (en) * | 2015-04-15 | 2015-07-22 | 广州中大微电子有限公司 | Multistage multiple output power management circuit |
| US20150280568A1 (en) * | 2013-02-21 | 2015-10-01 | Kabushiki Kaisha Toshiba | Semiconductor device |
-
2015
- 2015-12-05 CN CN201510900986.2A patent/CN105515380B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201365192Y (en) * | 2009-01-07 | 2009-12-16 | 深圳市明微电子股份有限公司 | High voltage and low voltage converting circuit |
| CN102692946A (en) * | 2012-06-15 | 2012-09-26 | 钜泉光电科技(上海)股份有限公司 | Current reference circuit |
| US20150280568A1 (en) * | 2013-02-21 | 2015-10-01 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN203596756U (en) * | 2013-11-30 | 2014-05-14 | 成都岷创科技有限公司 | Power supply circuit used in AC-DC primary side control chip |
| CN104793682A (en) * | 2015-04-15 | 2015-07-22 | 广州中大微电子有限公司 | Multistage multiple output power management circuit |
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