CN105513978B - The preparation method of conductive wires - Google Patents
The preparation method of conductive wires Download PDFInfo
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- CN105513978B CN105513978B CN201410498456.5A CN201410498456A CN105513978B CN 105513978 B CN105513978 B CN 105513978B CN 201410498456 A CN201410498456 A CN 201410498456A CN 105513978 B CN105513978 B CN 105513978B
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Abstract
A kind of preparation method of conductive wires, comprises the following steps：First, there is provided a substrate, the upper surface of substrate is formed with conductive layer；Then, conductive layer is subjected to patterned process, to form conductive pattern in the upper surface of substrate, forms the first recess region between conductive pattern two-by-two, wherein, the conductive layer of part is remained in the first recess region；Then, in forming the first sacrificial pattern on conductive layer, the first sacrificial pattern is inserted in the first recess region, and the first sacrificial pattern protrudes from the upper surface of conductive pattern, the second recess region, and the second recess region exposure conductive pattern are formed between the first sacrificial pattern two-by-two；Then, conductive layer is subjected to electroplating processes, thickens the conductive pattern that the second recess region is exposed；Finally, the conductive layer remained in the first sacrificial pattern and the first recess region is removed.
Description
Technical field
The present invention is related to a kind of preparation method of conductive wires, espespecially a kind of preparation method of thick-film conductor distribution.
Background technology
In recent years with the progress of electronic technology, match somebody with somebody for what carrying semiconductor subassembly, integrated circuit, electronic component etc. were used
Line substrate, in addition to (Miniaturization) is minimized, also rapidly develop towards person high product body, high output and high speed.
Especially, the manufacturing process of above-mentioned wiring substrate is also developed towards person's metal wiring granular.Formed such as on substrate for example, working as
When the metal wirings such as copper, forming sputtering film can be typically used with being electrolysed the manufacturing process such as plating.
When making thick film metal distribution on substrate with known techniques, because the thickness of metal wiring can influence to etch energy
Power, often because etching unclean influence production yield, or even can not produce expected copper is thick, wiring closet away from product.
The content of the invention
The embodiment of the present invention is to provide a kind of preparation method of thick-film conductor distribution.
A kind of preparation method for conductive wires that a wherein embodiment of the invention is provided, there is provided a substrate, the substrate
Upper surface is formed with a conductive layer.Then, conductive layer is subjected to patterned process, to form an at least conductive pattern in substrate
Upper surface, wherein, one first recess region is formed between conductive pattern two-by-two, the depth of first recess region is less than conductive layer
Thickness, the conductive layer of part is remained in the first recess region.Then, in forming at least one first sacrifice figure on conductive layer
Case, wherein, the first sacrificial pattern is at least inserted in the first recess region, and the first sacrificial pattern protrudes from conduction in a thickness direction
The upper surface of pattern, one second recess region, and the second recess region exposure at least one are formed between the first sacrificial pattern two-by-two
Partial conductive pattern.Then, conductive layer is subjected to electroplating processes, thickens the conductive pattern that the second recess region is exposed.
Finally, the first sacrificial pattern is removed, also, removes the conductive layer remained in the first recess region.
The preparation method of the conductive wires provided by the embodiment of the present invention, etch capabilities can be not only restricted to and produced
The thick-film conductor distribution that Distribution density is high, wiring width is narrow.
For the enabled feature and technology contents for being further understood that the present invention, refer to below in connection with the present invention specifically
Bright and accompanying drawing, but institute's accompanying drawing is only provided and used with reference to explanation, is not used for the present invention person of being any limitation as.
Brief description of the drawings
Figure 1A to Fig. 1 H shows the step flow of the preparation method of the conductive wires of one embodiment of the invention.
Fig. 2 is the step flow chart of the preparation method of the conductive wires of another embodiment of the present invention.
Description of reference numerals
1 substrate
The upper surface of 101 substrates
2nd, 2 ' conductive layer
21st, 21 ' conductive pattern
201st, 201 ' upper surface
3rd, 3 ' first recess region
4 first sacrifice layers
41 first sacrificial patterns
401 upper surfaces
5 second recess regions
6 etch stop layers
7 second sacrificial patterns
H1, H3 height
H2 thickness
S1~S6 steps
Embodiment
Figure 1A to Fig. 1 H is referred to, Figure 1A to Fig. 1 H is that the substrate with conductive wires of one embodiment of the invention is making
During schematic side view, also, Figure 1A to Fig. 1 H shows the step of the preparation method of the conductive wires of one embodiment of the invention
Rapid flow.
Figure 1A is refer to, first, there is provided a substrate 1.The species of substrate 1 can select according to actual demand.For example, work as
The preparation method of conductive wires is applied in semiconductor applications, and substrate 1 can be siliceous semiconductor crystal wafer；In other application
On, substrate 1 can be circuit base plate, and the material of substrate 1 can be makrolon (polycarbonate, PC), makrolon
With acrylonitrile-butadiene-styrene copolymer (Acrylonitrile Butadiene Styrene, ABS) or containing glass fibers
The material of dimension.Substrate 1 can also be glass substrate.
As shown in Figure 1A, the upper surface 101 of substrate 1 is formed with conductive layer 2.Forming the mode of conductive layer 2 can use for example
The printing of copper cream, spraying (Spray coating), electroless plating method (electroless plating) or sputtering method
(Sputtering) the common conductive material rubbing method such as, the mode such as conductive tape or copper foil of stickup can be also used, but not with this
It is limited.
Then, in order to which conductive layer 2 is carried out into patterned process, to form conductive pattern 21 in the upper surface of the substrate 1
101, the etching process of first time can be carried out to conductive layer 2.The etching process can adopt the mode of Wet-type etching.Specifically,
, can be prior to forming sacrificial pattern, such as the second sacrificial pattern 7 shown in Figure 1B on conductive layer 2 referring to figs. 1A to Fig. 1 C.Second is sacrificial
Dry ink can be used in domestic animal pattern 7, and forms the mode of the second sacrificial pattern 7 such as including program exposed and developed.
Then, conductive layer 2 is etched by the second sacrificial pattern 7, that is to say, that do not sacrificed by second for conductive layer 2
Pattern 7 covers and exposed the part come and is etched (for example, carrying out stinging Copper treatment), with patterned conductive layer 2.Finally, then
Remove the second sacrificial pattern 7.It is noted that in the step of above-mentioned etching conductive layer 2, the conductive layer 2 come is exposed only
The thickness of some is etched, that is to say, that is exposed the conductive layer 2 come and is still remained the thickness of some.
To sum up, conductive pattern 21 can be formed at the upper surface 101 of substrate 1, as shown in Figure 1 C, two-by-two between conductive pattern 21
The first recess region 3 can be formed, the depth of first recess region 3 is less than the thickness of conductive layer 2, in the first recess region 3
Remain the conductive layer 2 of part.The conductive layer 2 for being formed at the upper surface 101 of substrate 1 can be by being remained in the first recess region 3
Some thickness and turn on comprehensively, with the follow-up electroplating processes of profit.
In another embodiment not illustrated of the present invention, etching process can adopt the mode of dry-etching, with laser ablation
Conductive layer 2, and then the conductive layer 2 is subjected to patterned process.Specifically, can be according to actual demand, such as foundation conductive layer 2
Material, conductive layer 2 original depth or conductive layer 2 in residual thickness H2 in the first recess region 3 etc., to laser energy
Adjusted with the sweep time of laser, with the upper surface for avoiding laser ablation excessive and making the first recess region 3 expose substrate 1
101, or avoid laser energy deficiency and make the not up to expected depth of the first recess region 3.
Then, with reference to figure 1D, in forming the first sacrificial pattern 41 on conductive layer 2, the first sacrificial pattern 41 is at least to insert
In first recess region 3, also, the first sacrificial pattern 41 is to protrude from the upper surface 201 of conductive pattern 21 in a thickness direction.
That is, first the height H3 in a thickness direction of sacrificial pattern 41 be greater than the height H1 of conductive pattern 21 in a thickness direction.
The height H3 of first sacrificial pattern 41 in a thickness direction also for the first sacrificial pattern 41 upper surface 401 to substrate 1 upper table
The vertical range in face 101, and the height H1 of conductive pattern 21 in a thickness direction also for conductive pattern 21 upper surface 201 to base
The vertical range of the upper surface 101 of plate 1.In addition, the side wall of the first sacrificial pattern 41 forms the second recess region 5, this is second recessed
Groove region 5 can expose the conductive pattern 21 of a part.
It is described further below in the embodiment that the first sacrificial pattern 41 is formed on conductive layer 2.For example, can be prior to leading
One layer of first sacrifice layer 4 is formed to whole face property in electric layer 2, wherein, the first sacrifice layer 4 can fill up the first recess region 3.Then,
First sacrifice layer 4 is subjected to patterned process, the first sacrifice layer 4 is formed the first sacrificial pattern 41.First sacrifice layer 4 can be used
Dry ink, and the mode of the first sacrificial pattern 41 is patterned such as including program exposed and developed.
Thus, the first sacrificial pattern 41 may correspond to the first recess region 3 and be formed in the first recess region 3 and be remained
Conductive layer 2 on.As shown in figure iD, in the present embodiment, the first sacrificial pattern 41 can fill up the first recess region 3, and first is sacrificial
The side wall of domestic animal pattern 41 and the side wall of conductive pattern 21 can be trimmed partly, and in other words, the second recess region 5 can expose conductive pattern
Case 21.For another aspect, the first sacrificial pattern 41 and conductive pattern 21 are positive and negative complementation, but invention is not limited thereto.
Then, with reference to figure 1D to Fig. 1 E, conductive layer 2 is subjected to electroplating processes, the conduction for being exposed the second recess region 5
Pattern 21 thickens.In the present embodiment, conductive pattern 21 is to thicken the height H3 to the first sacrificial pattern 41 in a thickness direction.
In other words, the height of the conductive pattern 21 ' through thickening in a thickness direction can be with first sacrificial pattern 41 in a thickness direction
Height H3 is identical.The height of conductive pattern 21 ' through thickening in a thickness direction also for conductive pattern 21 ' upper surface 201 ' extremely
The vertical range of the upper surface 101 of substrate 1.
Then, in order to remove the first sacrificial pattern 41 and remove the portion that conductive layer 2 ' remained in the first recess region 3 '
Point, can be in forming one layer of etch stop layer 6 on conductive pattern 21 ', to protect conductive pattern 21 '.The material example of etch stop layer 6
Such as include tin and lead.Then, under the protection of etch stop layer 6, by go it is black in a manner of remove the first sacrificial pattern 41, such as Fig. 1 F institutes
Show.Black mode is gone to be, for example, using the first sacrificial pattern of solvent soaking 41 or shell the first sacrificial pattern 41 using plasma-based body
Remove.
Then, with reference to figure 1G, in order to remove the part that conductive layer 2 ' is remained in the first recess region 3 ', can etch
Under the protection on barrier layer 6, secondary etching process is carried out to conductive layer 2 '.Similar in appearance to the etching process of first time, second
Etching process can equally adopt wet type and sting the mode of copper or the mode of dry laser ablation.Conductive layer 2 ' is in the first groove area
It is, for example, to be less than 5 microns that the part remained in domain 3 ', which only has segment thickness H2, the segment thickness H2 of conductive layer 2 ', therefore,
Whether the mode of Wet-type etching or the mode of dry-etching are used, what conductive layer 2 ' was remained in the first recess region 3 '
Part can all be removed easily.
Finally, as shown in fig. 1H, as long as removing etch stop layer 6, you can complete the making of conductive wires, and obtain thick film
Conductive wires, such as thick copper wiring.In one embodiment of the invention, the thickness (that is, the thickness of conductive pattern 21 ') of thick copper wiring
50 microns can be more than, and the wiring closet of thick copper wiring is away from the grade that can reach less than 50 microns.Reality as shown in Figure 1A to Fig. 1 H
Shi Lizhong, the wiring closet of thick copper wiring is away from the width for being also the first recess region 3,3 '.
Above-described embodiment can summarize the preparation method of the conductive wires of another embodiment of the present invention, refer to Fig. 2 stream
Cheng Tu.First, there is provided a substrate, the upper surface of the substrate is formed with a conductive layer (step S1)；Then, conductive layer is subjected to figure
Caseization processing, to form an at least conductive pattern in the upper surface of substrate, wherein, it is recessed that one first is formed between conductive pattern two-by-two
Groove region, the depth of first recess region are less than the thickness of conductive layer, and the conduction of part is remained in the first recess region
Layer (step S2)；Then, in forming at least one first sacrificial pattern on conductive layer, wherein, first sacrificial pattern is at least inserted
In first recess region, first sacrificial pattern protrudes from the upper surface of conductive pattern in a thickness direction, and first sacrifices two-by-two
One second recess region is formed between pattern, and second recess region exposes at least one of conductive pattern (step
S3)；Then, conductive layer is subjected to electroplating processes, the conductive pattern that the second recess region is exposed is thickened (step S4)；So
Afterwards, the first sacrificial pattern (step S5) is removed；And remove the conductive layer (step S6) remained in the first recess region.
In summary, the embodiment of the present invention provides a kind of preparation method of conductive wires, and it is carried out using to conductive layer 2
First time etching process, with patterned conductive layer 2, recycle at second of the etching carried out to the conductive layer 2 ' thickened
Reason, to remove the conductive layer thickness remained in the first recess region 3,3 '.The preparation method of conductive wires is by this two-part
Etching mode carry out the making of conductive wires, etch capabilities can be not only restricted to, and then avoid caused by etching not exclusively
Conductive yield it is bad the problem of.
In addition, the conductive pattern 21 that the preparation method of conductive wires is formed using the upper surface 101 of substrate 1, can be established
The first stage height of thick-film conductor distribution (for example, thick copper wiring), recycling protrude from the upper surface 201 of conductive pattern 21
First sacrificial pattern 41, the second stage height of thick-film conductor distribution (for example, thick copper wiring) can be established.The making of conductive wires
Method can produce the conductive wires that Distribution density is high, wiring width is narrow.
The preferable possible embodiments of the present invention are the foregoing is only, not thereby limit to the scope of the claims of the present invention, therefore lift
All equivalence techniques changes done with description of the invention and schema content, are both contained in protection scope of the present invention.
Claims (9)
- A kind of 1. preparation method of conductive wires, it is characterised in that including：A substrate is provided, the upper surface of the substrate is formed with a conductive layer；The conductive layer is subjected to patterned process, to form multiple conductive patterns in the upper surface of the substrate, wherein, two-by-two One first recess region is formed between the conductive pattern, the depth of first recess region is less than the thickness of the conductive layer Degree, the conductive layer of part is remained in first recess region；In forming multiple first sacrificial patterns on the conductive layer, wherein, first sacrificial pattern at least inserts described first In recess region, first sacrificial pattern protrudes from the upper surface of the conductive pattern in a thickness direction, and two-by-two described One second recess region is formed between one sacrificial pattern, and second recess region exposes at least one of conductive pattern Case；The conductive layer is subjected to electroplating processes, thickens the conductive pattern that second recess region is exposed；Remove first sacrificial pattern；AndRemove the conductive layer remained in first recess region.
- 2. the preparation method of conductive wires according to claim 1, wherein, by the step of conductive layer progress electroplating processes Before after rapid and the step of removing first sacrificial pattern, further include：Lost in forming one on the conductive pattern Carve barrier layer.
- 3. the preparation method of conductive wires according to claim 2, wherein, remove and remained in first recess region The conductive layer the step of after, further include：Remove the etch stop layer.
- 4. the preparation method of conductive wires according to claim 1, wherein, it is sacrificial in forming described first on the conductive layer In the step of domestic animal pattern, further include：One first sacrifice layer is formed to whole face property on the conductive layer, wherein, it is recessed that first sacrifice layer fills up described first Groove region；AndFirst sacrifice layer is subjected to patterned process, first sacrifice layer is formed first sacrificial pattern in described On conductive layer.
- 5. the preparation method of conductive wires according to claim 1, wherein, the conductive layer is subjected to patterned process In step, further include：One second sacrificial pattern is formed on the conductive layer；The conductive layer is etched by second sacrificial pattern；AndRemove second sacrificial pattern.
- 6. the preparation method of conductive wires according to claim 1, wherein, the conductive layer is subjected to patterned process In step, further include：With conductive layer described in laser ablation.
- 7. the preparation method of conductive wires according to claim 1, wherein, the conductive pattern is thickened to described first The height of sacrificial pattern in a thickness direction.
- 8. the preparation method of conductive wires according to claim 1, wherein, the conductive pattern is sacrificed with described first schemes Case is positive and negative complementation.
- 9. the preparation method of conductive wires according to claim 1, wherein, a side wall of first sacrificial pattern and institute The sidewall sections for stating conductive pattern trim.
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| CN201410498456.5A CN105513978B (en) | 2014-09-25 | 2014-09-25 | The preparation method of conductive wires |
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| CN201410498456.5A CN105513978B (en) | 2014-09-25 | 2014-09-25 | The preparation method of conductive wires |
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| CN105513978A CN105513978A (en) | 2016-04-20 |
| CN105513978B true CN105513978B (en) | 2018-03-20 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101917818A (en) * | 2009-09-25 | 2010-12-15 | 昆山市华升电路板有限公司 | Pad structure of circuit board and manufacturing method thereof |
| CN103545222A (en) * | 2013-10-24 | 2014-01-29 | 中国电子科技集团公司第四十一研究所 | High-reliability soft-medium circuit addition manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002368386A (en) * | 2001-06-07 | 2002-12-20 | Toppan Printing Co Ltd | Plate for electrodeposition metal pattern transfer and wiring board fabricated by using the same |
| JP2004327616A (en) * | 2003-04-23 | 2004-11-18 | Sumitomo Electric Ind Ltd | Method for forming metallic pattern |
| JP3972211B2 (en) * | 2004-09-03 | 2007-09-05 | セイコーエプソン株式会社 | Semiconductor device and manufacturing method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101917818A (en) * | 2009-09-25 | 2010-12-15 | 昆山市华升电路板有限公司 | Pad structure of circuit board and manufacturing method thereof |
| CN103545222A (en) * | 2013-10-24 | 2014-01-29 | 中国电子科技集团公司第四十一研究所 | High-reliability soft-medium circuit addition manufacturing method |
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