CN105500208A - Finishing device for CMP technological polishing pad - Google Patents

Finishing device for CMP technological polishing pad Download PDF

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Publication number
CN105500208A
CN105500208A CN201610041652.9A CN201610041652A CN105500208A CN 105500208 A CN105500208 A CN 105500208A CN 201610041652 A CN201610041652 A CN 201610041652A CN 105500208 A CN105500208 A CN 105500208A
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CN
China
Prior art keywords
polishing pad
runner
nozzle
shell
trimming device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201610041652.9A
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Chinese (zh)
Inventor
夏秋良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Nanosecond Science And Technology Co Ltd Of New Micron Technology
Original Assignee
Suzhou Nanosecond Science And Technology Co Ltd Of New Micron Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Nanosecond Science And Technology Co Ltd Of New Micron Technology filed Critical Suzhou Nanosecond Science And Technology Co Ltd Of New Micron Technology
Priority to CN201610041652.9A priority Critical patent/CN105500208A/en
Publication of CN105500208A publication Critical patent/CN105500208A/en
Pending legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017Devices or means for dressing, cleaning or otherwise conditioning lapping tools

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention provides a finishing device for a CMP technological polishing pad. The finishing device comprises a finisher and a high-pressure water gun or a high-pressure air gun arranged at the edge of the finisher, the finisher comprises a rotating wheel, abrasive particles are distributed on the surface of the rotating wheel, the rotating wheel is installed on a shell capable of providing power, and holes or spraying nozzles or gaps are formed in the edge or the outer side of the shell or formed in gaps between the abrasive particles and are connected to the high-pressure water gun or the high-pressure air gun through pipelines. A hole or a spraying nozzle or a gap can be formed in the middle of the annular rotating wheel. The high-pressure water gun or the air gun is additionally arranged at the edge of the finisher, so that high-pressure washing can be carried out on a trimmed position from different angles while the surface of the polishing pad is finished by an abrasive wheel of the finisher, and the technology can be controlled very easily; the pressure is small, and thus damage to the surface of the polishing pad can be avoided; in addition, the high-pressure water gun or the air gun can be additionally arranged on the periphery of the finisher.

Description

The trimming device of CMP polishing pad
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of trimming device of CMP polishing pad.
Background technology
Chemically mechanical polishing (CMP) technology is one of key technology of semiconductor wafer surface processing, is used widely in each stage surface planarization process of ic manufacturing process and the processing of surface polishing of large scale bare silicon wafer.The process of chemically mechanical polishing, mainly remove the process of material by the effect of polishing pad, polishing fluid and optionally chemical reagent from wafer substrate, wherein polishing pad and polishing fluid are consumptive materials main in CMP.
Polishing pad (polishingpad) has storage, transport polishing fluid, removes residual processing material, transmits mechanical load and maintain the functions such as polishing environment, and the service life of polishing pad has a strong impact on the cost of CMP.Typical polishing pad material is divided into polyurethane polishing pad, non-woven fabrics polishing pad etc., there is one deck porous layer on its surface, and the exposed surface of this layer comprises perforate, and it can store polishing fluid and catch the abrasive slurry be made up of useless polishing slurries and the material removed from wafer in CMP process.
But along with constantly carrying out of CMP process, the physics of polishing pad and chemical property can change, show as pad interface and produce residual substance, volume-diminished, the quantity of micropore reduce, surface roughness reduces, there is molecular recombination phenomenon in surface, forms certain thickness glazing layer, cause the reduction of polishing speed and quality of finish.Therefore, suitable finishing must be carried out to polishing pad, denude the surface also perforate of this polishing pad, and create dimpling thing over the surface of the polishing pad, namely penetrate the porous layer on this pad surface for physically.
Typical trimmer is generally diamond truer, and the matrix comprising resin material and the diamond abrasive particles be cemented on matrix abradant surface, wherein abradant surface is plane, and when repairing, this plane is parallel with pad interface.In the process utilizing trimmer to repair polishing pad, trimmer rotates simultaneously and moves back and forth, and trimmer is pressed in pad interface with certain pressure, diamond abrasive particles is made to contact with pad interface and cut polishing pad, thus realize carrying out cutting down to pad interface, make pad interface obtain required roughness.
But at present, the effect before only can not reaching in follow-up polishing process with the polishing pad that trimmer carries out revising, and along with revising the increase of number of times, polishing effect can worse and worse, and the degree that wafer is scraped off in polishing process increases.This is mainly because the cavity above polishing pad is very intensive, and aperture is less, diamond above trimmer can be repaired pad interface, recover the roughness of pad interface, the lapping liquid particle of harmful substance as polishing product and consolidation is removed simultaneously, then can not effectively remove for compared with the harmful substance inside deep space hole.Along with polishing number of times increases, the harmful substance of ensconcing inside deep hole gets more and more, and had a strong impact on the ability that polishing pad stores and transports polishing fluid, and the harmful substance of ensconcing in deep hole also can cause scratch to crystal column surface.
For this shortcoming of trimmer, industry has been invented again another kind of mode and has been processed polishing pad, and namely each polishing all can utilize high-pressure water knife to rinse pad interface after completing.The strength of high-pressure water knife can be rushed out the harmful substance of ensconcing inside polishing pad deep hole, and repair pad interface, effect is better simultaneously.But the process costs of high-pressure water knife is very high, be generally used for expensive front road Damascus technics CMP board, and the very difficult control of technological parameter, polishing pad for different manufacturers will mate different developing techniques, because bad being easy to of Stress control causes some region of pad interface impaired, and then causes whole polishing pad to scrap.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of trimming device of CMP polishing pad is provided, while finishing, rinse by the harmful substance of repairing out in hole with hydraulic giant (or air gun), and change the structure of trimmer.
According to technical scheme provided by the invention, the trimming device of described CMP polishing pad comprises: the giant at trimmer and trimmer edge or high pressure air rifle, described trimmer comprises runner, wheel surface has abrasive grain placement, runner is arranged on can be provided on the shell of power, cavity, nozzle or gap is provided with at shell edge or outside, or arrange cavity, nozzle or gap in abrasive particle is with space between abrasive particle, described cavity, nozzle or gap are connected to giant or high pressure air rifle by pipeline.
Concrete, described runner is by bearing or be directly stuck on shell.
Described shell transfer can take turns parallel distribution, or housing diameter is greater than runner, and has a bound edge to runner.
Described cavity, nozzle or gap can be one or more layers.
Described cavity or nozzle can be arranged by differing heights, described height lower than, higher than or be parallel to grain surface.
The diameter in described cavity, nozzle or gap or width are at 1um ~ 5000um.
The injection direction in described cavity, nozzle or gap can be different, can be parallel to runner plane, or transfer wheel plane has angle.
Described shell can also be provided with the optical sensor for responding to polishing pad velocity of rotation.
Described shell can also be provided with more than 3 or 3 follows the Altitude control of the distance between polishing pad protruding for regulating runner, and during operation, described Altitude control protruding apex touches pad interface, and Altitude control projection itself or top can rotate freely.
For the runner of annular, described cavity, nozzle or gap can also be set in the middle of runner.
The present invention designs a kind of new trimming device, and by adding giant (or air gun) to trimmer edge, while trimmer emery wheel is repaired pad interface, carry out high pressure washing from different perspectives to trim locations, such benefit has two:
1) after polishing pad repaired by common trimmer, just recover pad interface roughness, harmful substance in the hole of polishing pad top layer is cleared, but the harmful substance cleared is not removed to outside polishing pad completely, just inside hole, be moved to polishing pad outer surface, also likely reenter inside polishing pad holes during follow-up polishing.The present invention is while finishing, hydraulic giant (or air gun) rinses by the harmful substance of repairing out in hole, first these materials are flushed in polishing pad groove and are also finally flushed to outside polishing pad, substantially reduce harmful substance carries out secondary injury possibility to polishing pad.
2) on the trimming polished pad surface of trimmer, while reconstituting surface hole defect, add giant (or air gun) from different directions to rinse hole, can while pad interface be started by diamond, rinse by water (or gas) harmful substance to empty depths, its effect can replace even exceeding high-pressure water knife, and its technique is then very easy to control, and pressure is less can not damage polish pad surface, and giant (or air gun) can be attached to around trimmer.
Accompanying drawing explanation
Fig. 1 is the enforcement view of CMP.
State diagram when Fig. 2 is polishing pad trimmer work.
Fig. 3 is prior art trimmer front schematic view.
Fig. 4 is trimmer sectional view one.
Fig. 5 is trimmer sectional view two.
Fig. 6 is trimmer sectional view three.
Fig. 7 is embodiment of the present invention trimmer front schematic view one.
Fig. 8 is embodiment of the present invention trimmer front schematic view two.
Fig. 9 is embodiment of the present invention trimmer front schematic view three.
Figure 10 is embodiment of the present invention trimmer front schematic view four.
Figure 11 is the upward view of Figure 10.
Figure 12 is the Altitude control bump diagrams that shell of the present invention is arranged.
Figure 13 is the finishing runner schematic diagram of annular.
Figure 14 is to annular runner embodiment of the present invention trimmer front schematic view one.
Figure 15 is to annular runner embodiment of the present invention trimmer front schematic view two.
Figure 16 arranges cavity or nozzle schematic diagram between abrasive particle and abrasive particle in space.
Figure 17 arranges cavity or nozzle schematic diagram between abrasive particle and abrasive particle in space and on shell.
Figure 18 arranges in space on cavity or nozzle and shell to arrange three different directions cavities or nozzle schematic diagram between abrasive particle and abrasive particle.
Detailed description of the invention
Below in conjunction with drawings and Examples, the invention will be further described.
Be illustrated in figure 1 normal CMP process, wherein the clamping device 101 of wafer fixes wafer by absorption method or method of pasting, with certain pressure, wafer is pressed on polishing pad 102, deep bid 103 rotates simultaneously, now the relative polishing pad 102 of wafer will be formed around crystal circle center's rotation and the state around the revolution of polishing pad center, on polishing pad 102, spray polishing fluid, crystal column surface will be polished simultaneously.
The glossing while that another kind of mode being two-sided, when being this technique with Fig. 1 difference, wafer is fixed on inside erratic star wheel, clamping device 101 changes polishing pad into above, utilizes two large polishing pads to clamp wafer and rotates, thus carry out polishing to wafer upper and lower surface simultaneously.
Wearing and tearing in various degree all can be had after a collection of product of the every polishing of deep bid polishing pad in CMP process, need to utilize surface to repair with the trimmer of diamond projection, re-construct the hole of pad interface, projection or fine hair, make polishing pad again recover to store the effect of polishing fluid and polishing residue.
Be the state during work of a kind of polishing pad trimmer as shown in Figure 2, in an embodiment of the present invention, this trimmer 201 is connected with unicom pipeline 202, and unicom pipeline 202 can provide and comprise the power such as electricity, wind, can also comprise high-pressure water pipe, high-pressure air pipe etc.During this polishing pad trimmer 201 operation, its sense of rotation can be clockwise also can be counterclockwise, also can be a period of time that turns clockwise to be rotated counterclockwise a period of time again.
In embodiments of the invention one, be illustrated in figure 3 the runner 302 of trimmer 201, the material of described runner 302 can be the mixture of metal, metal alloy, plastic material (Polymer), fictile, carbon goods and above-mentioned material, it can be any shape, thickness, and has the ability of bonded-abrasive; Runner 302 surface has abrasive particle 301 to arrange, the material of abrasive particle 301 can be artificial or inartificial diamond, polycrystalline diamond (PCD), cubic boron nitride (CBN), polycrystal cubic boron nitride (PCBN), harden most crystal, polycrystalline material or above-mentioned material composite material etc. formed.
Mode by boning between abrasive particle 301 and runner 302 is fixed, the material of bonding agent comprises the mixture of metal, metal alloy, plastic material (Polymer), ceramic material and above-mentioned material, be wherein that embodiment represents with plastic material, also can comprise welding alloy material in addition.The size that abrasive particle 301 projection can have is between about 1 micron and about 2000 microns, as between about 5 microns and about 500 microns, even between about 10 microns and about 250 microns.The plurality of minute protrusions can have substantially same size, also can have array arrangement different size.The distribution of abrasive particle 301 on runner 302 can be that whole face is uniformly distributed, and also can be that array is uniformly distributed, or annular distribution; Appearing of abrasive particle 301 can be sharp, also can be flat, and also can be being evenly distributed of the peace of point, also can be a point different array, an array be sharp, and another array is flat; The height of abrasive particle 301 can be the same, also can be that the height of point is greater than flat, also can be flat higher than point.
Be the structure of trimmer 201 as shown in figures 4-6, runner 302 can be provided on the shell 303 of power by bearing or be directly stuck in.Shell 303 material comprises the mixture of metal, metal alloy, plastic material (Polymer), fictile, carbon goods and above-mentioned material, and it can be any shape, thickness; Its major function is fixing runner 302, provides power and hold a little when runner 302 High Rotation Speed; Its power can be electro-motor, also can be high-pressure pneumatic motor, and its rotating speed can at 1 rev/min ~ 100000 revs/min.This shell 303 transfer can take turns 302 equally parallel distributions (shown in Fig. 4), also runner 302 can be greater than by diameter, and have bound edge to a certain degree (shown in Fig. 5) to runner 302, also can be that the height of bound edge transfer wheel 302 is the same even exceedes shown in runner 302(Fig. 6).
As shown in Figure 7, shell 303 edge is also provided with cavity or nozzle 303-1, and the effect of this cavity or nozzle 303-1 is that water under high pressure or gas are ejected into pad interface when repairing or before and after finishing; This cavity or nozzle 303-1 also can not at shell 303 edges, but at the independent pipeline of the arranged outside of shell 303, its effect is the same with being arranged on shell edge; The quantity of this cavity or nozzle 303-1 can be multiple, be distributed in shell 303 edge or outside, also can be that a whole row is distributed in shell 303 edge or outside, also can be an annular gap, replace cavity or nozzle 303-1 by gap, this gap can be continuous print also can be one section of one spacer segment arrangement.
This cavity or nozzle 303-1 can be one decks can be also multilayer, or presses differing heights arrangement; It can be highly lower than, higher than or be parallel to grain surface, its diameter or width are at 1um ~ 5000um, and its injection direction can be parallel to runner 302 plane, also can be that transfer is taken turns 302 planes and had certain angle.
As shown in Figure 8, this cavity or nozzle 303-1 can also be designed to arrange cavity or nozzle 303-1 to same point from three (or multiple) directions, rinse during operation from three different direction water sprays or gas to finishing point simultaneously.
This trimmer size can be 1 cun ~ 18 cun, and it can be directly installed on wafer carrier (clamping device 101), or is installed on CMP board with other axles, is controlled the rotating speed of trimmer, pressure and moving direction by CMP board; Can also be manual, repair with artificial mode this trimmer hand-held.
As shown in Figure 9, the shell 303 of this trimmer can also arrange optical sensor 401, the speed transmission of information that this inductor 401 can rotate according to polishing pad is to runner 302, if polishing pad velocity of rotation is slow, then runner 302 can be repaired with slow speed, if polishing pad velocity of rotation is fast, then runner 302 can be repaired with fast speed.Manually hand-held words can install speed switch additional on shell 303, select different rotating speeds to come applicable different polishing pad position.
As shown in Figure 10 and Figure 11, the shell 303 of this trimmer can also control protruding 402 by rational height, be used for regulating runner 302 with the distance between polishing pad, thus control the pressure of runner 302 pairs of polishing pads; During operation, protruding 402 tip contact of this Altitude control are to pad interface.This Altitude control projection 402 highly can regulate, and it can be the smooth screw 402-1 in fixing top, and ball 402-2 is arranged at screw top, can rotate freely, as shown in figure 12; Also can be the roller rotated, roller direction can adapt to the direction that polishing pad rotates automatically.Protruding 402 numbers of this Altitude control are no less than 3.
In embodiment two, for finishing runner 302 annular as shown in figure 13, can also add cavity or nozzle 303-1 in the middle of it, as Figure 14 and 15, the effect of this cavity or nozzle 303-1 is that water under high pressure or gas are ejected into pad interface when repairing or before and after finishing; The quantity of this cavity or nozzle 303-1 can be multiple, it can be the centre that a whole row is distributed in annular finishing runner 302, also can be replace cavity or nozzle 303-1 with the gap of annular, this gap can be continuous print also can be one section of one spacer segment arrangement.
This cavity or nozzle 303-1 can be one decks can be also multilayer, or presses differing heights arrangement; It can be highly lower than, higher than or be parallel to grain surface, its diameter or width are at 1um ~ 5000um, and its injection direction can be parallel to runner 302 plane, also can be that transfer is taken turns 302 planes and had certain angle.
As shown in figure 15, this cavity or nozzle 303-1 can also be designed to arrange cavity or nozzle 303-1 to same point from three (or multiple) directions, rinse during operation from three different direction water sprays or gas to finishing point simultaneously.
In embodiment three, for the finishing runner 302 of abrasive particle 301 array periodic arrangement, its abrasive particle has space with between abrasive particle, this space can add cavity or nozzle 303-1 equally, as Figure 16 and 17, the effect of this cavity or nozzle 303-1 is that water under high pressure or gas are ejected into pad interface when repairing or before and after finishing; The quantity of this cavity or nozzle 303-1 can be multiple, also can replace cavity or nozzle 303-1 by the gap of annular, and this gap can be continuous print also can be one section of one spacer segment arrangement.
This cavity or nozzle 303-1 can be one decks can be also multilayer, or presses differing heights arrangement; It can be highly lower than, higher than or be parallel to grain surface, its diameter or width are at 1um ~ 5000um, and its injection direction can be parallel to runner 302 plane, also can be that transfer is taken turns 302 planes and had certain angle.
As shown in figure 18, this cavity or nozzle 303-1 can also be designed to arrange cavity or nozzle 303-1 to same point from three (or multiple) directions, rinse during operation from three different direction water sprays or gas to finishing point simultaneously.
In addition, be to be understood that, although this description is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of description is only for clarity sake, those skilled in the art should by description integrally, and the technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.

Claims (10)

  1. The trimming device of 1.CMP technique polishing pad, it is characterized in that, comprise: the giant at trimmer and trimmer edge or high pressure air rifle, described trimmer comprises runner (302), runner (302) surface has abrasive particle (301) to arrange, runner (302) be arranged on power can be provided shell (303) on, cavity, nozzle or gap is provided with at shell (303) edge or outside, or arrange cavity, nozzle or gap in abrasive particle is with space between abrasive particle, described cavity, nozzle or gap are connected to giant or high pressure air rifle by pipeline.
  2. 2. the trimming device of CMP polishing pad as claimed in claim 1, it is characterized in that, described runner (302) is by bearing or be directly stuck on shell (303).
  3. 3. the trimming device of CMP polishing pad as claimed in claim 1, is characterized in that, (302) the parallel distribution of described shell (303) transfer wheel, or shell (303) diameter is greater than runner (302), and has a bound edge to runner (302).
  4. 4. the trimming device of CMP polishing pad as claimed in claim 1, it is characterized in that, described cavity, nozzle or gap are one or more layers.
  5. 5. the trimming device of CMP polishing pad as claimed in claim 1, is characterized in that, described cavity or nozzle press differing heights arrangement, described height lower than, higher than or to be parallel to abrasive particle (301) surperficial.
  6. 6. the trimming device of CMP polishing pad as claimed in claim 1, is characterized in that, the diameter in described cavity, nozzle or gap or width are at 1um ~ 5000um.
  7. 7. the trimming device of CMP polishing pad as claimed in claim 1, is characterized in that, the injection direction in described cavity, nozzle or gap is parallel to runner (302) plane, or transfer wheel (302) plane has angle.
  8. 8. the trimming device of CMP polishing pad as claimed in claim 1, is characterized in that, described shell (303) being provided with the optical sensor (401) for responding to polishing pad velocity of rotation.
  9. 9. the trimming device of CMP polishing pad as claimed in claim 1, it is characterized in that, described shell (303) is provided with more than 3 or 3 for regulating runner (302) with the Altitude control projection (402) of the distance between polishing pad, during operation, described Altitude control projection (303) tip contact is to pad interface, and Altitude control projection (303) itself or top can rotate freely.
  10. 10. the trimming device of CMP polishing pad as claimed in claim 1, is characterized in that, for the runner (302) of annular, in the middle of runner (302), arranges described cavity, nozzle or gap.
CN201610041652.9A 2016-01-21 2016-01-21 Finishing device for CMP technological polishing pad Pending CN105500208A (en)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107877359A (en) * 2016-09-29 2018-04-06 罗门哈斯电子材料Cmp控股股份有限公司 For making the device of chemical mechanical polishing pads shaping surface
CN110524422A (en) * 2019-08-29 2019-12-03 上海华力微电子有限公司 Cleaning method of grinding pad and device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6179693B1 (en) * 1998-10-06 2001-01-30 International Business Machines Corporation In-situ/self-propelled polishing pad conditioner and cleaner
TW434115B (en) * 2000-04-27 2001-05-16 Promos Technologies Inc Chemical mechanical polishing device
CN1910011A (en) * 2004-01-26 2007-02-07 Tbw工业有限公司 Chemical mechanical planarization process control utilizing in-situ conditioning process
US20090036041A1 (en) * 2007-07-30 2009-02-05 Elpida Memory, Inc. Cmp pad dresser and cmp apparatus using the same
CN101422877A (en) * 2007-10-30 2009-05-06 联华电子股份有限公司 Grinding mat trimmer for chemical mechanical grinding
CN201998059U (en) * 2010-12-06 2011-10-05 中芯国际集成电路制造(上海)有限公司 Polishing pad trimmer
CN102554788A (en) * 2010-12-23 2012-07-11 中芯国际集成电路制造(上海)有限公司 Dressing method of polishing pad
CN205363592U (en) * 2016-01-21 2016-07-06 苏州新美光纳米科技有限公司 Trimming device of CMP technology polishing pad

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6179693B1 (en) * 1998-10-06 2001-01-30 International Business Machines Corporation In-situ/self-propelled polishing pad conditioner and cleaner
TW434115B (en) * 2000-04-27 2001-05-16 Promos Technologies Inc Chemical mechanical polishing device
CN1910011A (en) * 2004-01-26 2007-02-07 Tbw工业有限公司 Chemical mechanical planarization process control utilizing in-situ conditioning process
US20090036041A1 (en) * 2007-07-30 2009-02-05 Elpida Memory, Inc. Cmp pad dresser and cmp apparatus using the same
CN101422877A (en) * 2007-10-30 2009-05-06 联华电子股份有限公司 Grinding mat trimmer for chemical mechanical grinding
CN201998059U (en) * 2010-12-06 2011-10-05 中芯国际集成电路制造(上海)有限公司 Polishing pad trimmer
CN102554788A (en) * 2010-12-23 2012-07-11 中芯国际集成电路制造(上海)有限公司 Dressing method of polishing pad
CN205363592U (en) * 2016-01-21 2016-07-06 苏州新美光纳米科技有限公司 Trimming device of CMP technology polishing pad

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107877359A (en) * 2016-09-29 2018-04-06 罗门哈斯电子材料Cmp控股股份有限公司 For making the device of chemical mechanical polishing pads shaping surface
CN110524422A (en) * 2019-08-29 2019-12-03 上海华力微电子有限公司 Cleaning method of grinding pad and device

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Application publication date: 20160420