CN110524422A - Cleaning method of grinding pad and device - Google Patents
Cleaning method of grinding pad and device Download PDFInfo
- Publication number
- CN110524422A CN110524422A CN201910820743.6A CN201910820743A CN110524422A CN 110524422 A CN110524422 A CN 110524422A CN 201910820743 A CN201910820743 A CN 201910820743A CN 110524422 A CN110524422 A CN 110524422A
- Authority
- CN
- China
- Prior art keywords
- grinding pad
- grinding
- pad
- wafer
- cleaning method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000227 grinding Methods 0.000 title claims abstract description 182
- 238000004140 cleaning Methods 0.000 title claims abstract description 61
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000007788 liquid Substances 0.000 claims abstract description 41
- 230000001680 brushing effect Effects 0.000 claims abstract description 5
- 239000013618 particulate matter Substances 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000005406 washing Methods 0.000 claims description 7
- 125000003473 lipid group Chemical group 0.000 claims description 6
- 239000006227 byproduct Substances 0.000 description 8
- 238000011010 flushing procedure Methods 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000000443 aerosol Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004080 punching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001914 calming effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/12—Brushes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention provides a kind of cleaning method of grinding pad and device, this method are as follows: before grinding wafer, be rinsed by highly pressurised liquid or high pressure gas to grinding pad, scrub by cleaning brush to grinding pad；After grinding wafer, grinding pad is scrubbed by cleaning brush.The device includes the flusher for grinding pad cleaning and the brushing device for grinding pad cleaning.The present invention can avoid the scratch to wafer when to grinding wafer.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of cleaning method of grinding pad and device.
Background technique
Chemical mechanical grinding is the surface planarisation technique in semiconductor fabrication.The process of chemical mechanical grinding be by
Wafer is placed on the grinding pad of rotation, by apply certain pressure grinding head add chemical grinding liquid to wafer ground with
Make flattening wafer surface.After the completion of grinding wafer, surface and ditch of the byproduct residues such as abrasive grains in grinding pad can be generated
It in slot, therefore, after grinding wafer, needs to clean grinding pad by cleaning brush, might have on grinding pad
Grain object residual.Since grinding wafer is one by one successively to grind, before next wafer is put into grinding pad, grinding pad
On have 20 seconds or so free time, might have particulate matter at this time and fall on grinding pad, and ground when grinding head rotates to
When grinding pad position, remaining particulate matter or the intracorporal abrasive grains of grinding chamber on grinding head are fallen on grinding pad, then are ground
Secondary aerosol species residual can be generated on mill pad, then the particulate matter remained on grinding pad can cause to scratch to crystal column surface.Therefore,
The technical issues of how grinding pad being cleaned, to avoid the scratch to wafer being this field urgent need to resolve.
Summary of the invention
The object of the present invention is to provide a kind of cleaning method of grinding pad and devices, to avoid the scratch to wafer.
In order to achieve the above objectives, the present invention provides a kind of cleaning method of grinding pad, before grinding wafer, passes through high pressure liquid
Body or high pressure gas are rinsed grinding pad, are scrubbed by cleaning brush to grinding pad；After grinding wafer, by clear
Clean brush scrubs grinding pad.
Further, cleaning method of grinding pad provided by the invention, the highly pressurised liquid are water.
Further, cleaning method of grinding pad provided by the invention, the water are pure water.
Further, cleaning method of grinding pad provided by the invention, the highly pressurised liquid or high pressure gas are to grinding pad
Washing time is 10 seconds to 20 seconds.
Further, cleaning method of grinding pad provided by the invention first passes through highly pressurised liquid or height before grinding wafer
Body of calming the anger is rinsed grinding pad, is then scrubbed again by cleaning brush to grinding pad.
Further, cleaning method of grinding pad provided by the invention first passes through cleaning brush to grinding before grinding wafer
Pad is scrubbed, and is then rinsed again by highly pressurised liquid or high pressure gas to grinding pad.
Further, cleaning method of grinding pad provided by the invention, before grinding wafer, by cleaning brush to grinding pad
It is scrubbed, grinding pad is rinsed by highly pressurised liquid or high pressure gas, it is described to scrub and rinse while carrying out.
Further, cleaning method of grinding pad provided by the invention, it is described to use highly pressurised liquid or high pressure gas to grinding
Padding the step of being rinsed includes:
Low-pressure washing is carried out to grinding pad using the liquid or gas of the first pressure of smaller pressure, makes to remain in grinding pad
On particulate matter and first pressure liquid or gas mixing formed lipid residue；
High pressure punching is carried out to grinding pad and the lipid residue using the liquid or gas of the second pressure of larger pressure
It washes, is scratched caused by grinding pad during the rinsing process to avoid particulate matter.
In order to achieve the above objectives, the present invention also provides a kind of grinding pad cleaning devices, including the flushing cleaned for grinding pad
Device and the brushing device cleaned for grinding pad.
Further, grinding pad cleaning device provided by the invention, the flusher include liquid wash device or gas
Body flusher.
Compared with prior art, cleaning method of grinding pad and device provided by the invention, after grinding wafer, by clear
Scrub of the clean brush to grinding pad, is the residual in order to wash off the by-products such as the particulate matter in grinding pad surface and its groove.In crystalline substance
Before circle grinding, grinding pad is rinsed by highly pressurised liquid or high pressure gas, grinding pad can be washed during idle time
Residual when inside falling the particulate matter on grinding pad, and grinding head can be washed and rotate on grinding pad, on grinding head
Particulate matter or the intracorporal abrasive grains of grinding chamber fall to the secondary aerosol species on grinding pad residual, can wash residual
Stay in the by-products such as the particulate matter on grinding pad.Before grinding wafer, scrub by cleaning brush to grinding pad can be cleaned
The biggish particulate matter residual fallen in grinding pad surface and its groove can be effectively reduced or avoid in subsequent wafer grinding
Scratch to crystal column surface.
Detailed description of the invention
Fig. 1 is the flow chart of the cleaning method of grinding pad of one embodiment of the invention；
Fig. 2 is the flow chart cleaned before grinding wafer to grinding pad in one embodiment of the invention；
Fig. 3 is the flow chart cleaned before grinding wafer to grinding pad in one embodiment of the invention；
Fig. 4 is the structural schematic diagram of the grinding pad cleaning device of one embodiment of the invention.
It is as shown in the figure: 1, flusher, 2, brushing device, 3, grinding pad, 4, turntable, 5, shaft.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing:
Referring to FIG. 1, the embodiment of the present invention provides a kind of cleaning method of grinding pad, comprising:
Step 10, before grinding wafer, grinding pad is rinsed by highly pressurised liquid or high pressure gas, passes through cleaning
Brush scrubs grinding pad.
Step 20, after grinding wafer, grinding pad is scrubbed by cleaning brush.
Wherein highly pressurised liquid can be the water such as pure water.
Referring to FIG. 4, the embodiment of the present invention also provides a kind of grinding pad cleaning device, including the flushing cleaned for grinding pad
Device 1 and the brushing device 2 cleaned for grinding pad.Grinding pad 3 is arranged on the turntable 4 of milling apparatus, and turntable 4 passes through
Shaft 5 rotates.Wherein flusher 1 includes liquid wash device or gas flushing device.It is only illustrated in the embodiment of the present invention
The confession of the lapping liquid in techniques well known can be used in the pipeline of the supply liquid of flusher 1, the specific structure of flusher 1
Answer device.
Cleaning method of grinding pad and device provided in an embodiment of the present invention, after grinding wafer, by cleaning brush to grinding
The scrub for grinding pad, is the residual in order to wash off the by-products such as the particulate matter in grinding pad surface and its groove.Grinding wafer it
Before, grinding pad is rinsed by highly pressurised liquid or high pressure gas, grinding pad can be washed and fallen in during idle time
Particulate matter on grinding pad, and remaining particulate matter when can wash grinding head and rotating on grinding pad, on grinding head
Or the intracorporal abrasive grains of grinding chamber fall to the residual of the secondary aerosol species on grinding pad, can wash and remain in grinding
The by-products such as the particulate matter on pad.Before grinding wafer, scrub by cleaning brush to grinding pad can wash grinding pad
Biggish particulate matter residual in surface and its groove be can be effectively reduced or be avoided to wafer table in subsequent wafer grinding
The scratch in face.The embodiment of the present invention can be improved the qualification rate of crystal column surface grinding.
The washing time of cleaning method of grinding pad provided in an embodiment of the present invention, highly pressurised liquid or high pressure gas to grinding pad
It can control at 10 seconds to 20 seconds, damaged caused by grinding pad to avoid prolonged rinse excessively, and to liquid resource
Waste.Flushing process can be continuous flushing, be also possible to discontinuous flushing.
Referring to FIG. 2, cleaning method of grinding pad provided in an embodiment of the present invention, the cleaning step packet before grinding wafer
It includes:
Step 11, grinding pad is rinsed by highly pressurised liquid or high pressure gas,
Step 12, grinding pad is scrubbed by cleaning brush.
The by-products such as the particulate matter remained on grinding pad can be washed by first rinsing, and rear scrub can wash grinding pad
Biggish particulate matter residual in surface and its groove.
Referring to FIG. 3, cleaning method of grinding pad provided in an embodiment of the present invention, the cleaning step packet before grinding wafer
It includes:
Step 13, grinding pad is scrubbed by cleaning brush.
Step 14, grinding pad is rinsed by highly pressurised liquid or high pressure gas.
First scrub can wash the residual of the biggish particulate matter in grinding pad surface and its groove, and rear rinse can clean
Fall the by-products such as the particulate matter remained on grinding pad.Furthermore rinsing afterwards can be by grinding pad surface after scrub and in groove
The liquefied mixture that grain object is formed after mixing with liquid is rinsed well, avoids remaining.
Cleaning method of grinding pad provided in an embodiment of the present invention, rinsing step and scrub step before grinding wafer can
To carry out simultaneously, to improve cleaning efficiency.Grinding pad is scrubbed by cleaning brush, passes through highly pressurised liquid or high pressure gas
Grinding pad is rinsed.
Cleaning method of grinding pad provided in an embodiment of the present invention, it is described using highly pressurised liquid or high pressure gas to grinding pad into
Row rinse the step of include:
Low-pressure washing is carried out to grinding pad using the liquid or gas of the first pressure of smaller pressure, makes to remain in grinding pad
On the by-products such as particulate matter and the liquid or gas mixing of first pressure form lipid residue；
High pressure punching is carried out to grinding pad and the lipid residue using the liquid or gas of the second pressure of larger pressure
It washes, is scratched caused by grinding pad during the rinsing process to avoid particulate matter.Particulate matter during the rinsing process causes grinding pad
Scratch be mainly reflected in the path that particulate matter flows through grinding pad when being flushed away on grinding pad.
The present invention is not limited to above-mentioned specific embodiment, all made various changes in claims of the present invention
And retouching, it is within the scope of the present invention.
Claims (10)
1. a kind of cleaning method of grinding pad, which is characterized in that before grinding wafer, by highly pressurised liquid or high pressure gas to grinding
Mill pad is rinsed, and is scrubbed by cleaning brush to grinding pad；After grinding wafer, grinding pad is carried out by cleaning brush
Scrub.
2. cleaning method of grinding pad as described in claim 1, which is characterized in that the highly pressurised liquid is water.
3. cleaning method of grinding pad as claimed in claim 2, which is characterized in that the water is pure water.
4. cleaning method of grinding pad as described in claim 1, which is characterized in that the highly pressurised liquid or high pressure gas are to grinding
The washing time of pad is 10 seconds to 20 seconds.
5. cleaning method of grinding pad as described in claim 1, which is characterized in that before grinding wafer, first pass through high pressure liquid
Body or high pressure gas are rinsed grinding pad, are then scrubbed again by cleaning brush to grinding pad.
6. cleaning method of grinding pad as described in claim 1, which is characterized in that before grinding wafer, first pass through cleaning brush
Grinding pad is scrubbed, then grinding pad is rinsed by highly pressurised liquid or high pressure gas again.
7. cleaning method of grinding pad as described in claim 1, which is characterized in that before grinding wafer, pass through cleaning brush pair
Grinding pad is scrubbed, and is rinsed by highly pressurised liquid or high pressure gas to grinding pad, described to scrub and rinse while carrying out.
8. cleaning method of grinding pad as described in claim 1, which is characterized in that described to use highly pressurised liquid or high pressure gas pair
The step of grinding pad is rinsed include:
Low-pressure washing is carried out to grinding pad using the liquid or gas of the first pressure of smaller pressure, makes to remain on grinding pad
Particulate matter and the liquid or gas mixing of first pressure form lipid residue；
High pressure washing is carried out to grinding pad and the lipid residue using the liquid or gas of the second pressure of larger pressure, with
Avoid the particulate matter scratch caused by grinding pad during the rinsing process.
9. a kind of grinding pad cleaning device, which is characterized in that clear including the flusher cleaned for grinding pad and for grinding pad
The brushing device washed.
10. grinding pad cleaning device as claimed in claim 9, the flusher includes liquid wash device or gas bleed
Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910820743.6A CN110524422A (en) | 2019-08-29 | 2019-08-29 | Cleaning method of grinding pad and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910820743.6A CN110524422A (en) | 2019-08-29 | 2019-08-29 | Cleaning method of grinding pad and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110524422A true CN110524422A (en) | 2019-12-03 |
Family
ID=68665923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910820743.6A Pending CN110524422A (en) | 2019-08-29 | 2019-08-29 | Cleaning method of grinding pad and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110524422A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113105865A (en) * | 2021-03-22 | 2021-07-13 | 长江存储科技有限责任公司 | Wafer grinding particles, polishing solution and cleaning system |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5957757A (en) * | 1997-10-30 | 1999-09-28 | Lsi Logic Corporation | Conditioning CMP polishing pad using a high pressure fluid |
| JP2003117817A (en) * | 2001-10-09 | 2003-04-23 | Dainippon Printing Co Ltd | Device and method for washing glass polishing device |
| CN1549307A (en) * | 2003-05-15 | 2004-11-24 | 台湾积体电路制造股份有限公司 | Method for cleaning hole material and apparatus thereof |
| CN103252721A (en) * | 2012-02-15 | 2013-08-21 | 台湾积体电路制造股份有限公司 | Cmp pad cleaning apparatus |
| CN103522188A (en) * | 2012-07-02 | 2014-01-22 | 中芯国际集成电路制造(上海)有限公司 | Method for arranging grinding pad, grinding pad arranging device and grinder table |
| CN103619497A (en) * | 2011-06-24 | 2014-03-05 | 杜尔艾科克林有限公司 | Device for treating workpieces |
| CN204053790U (en) * | 2014-04-11 | 2014-12-31 | 元亮科技有限公司 | For the pleasure boat brush of clean polishing disk |
| CN104416462A (en) * | 2013-08-20 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | Cleaning device of polishing pad finishing disc |
| CN105500208A (en) * | 2016-01-21 | 2016-04-20 | 苏州新美光纳米科技有限公司 | Finishing device for CMP technological polishing pad |
-
2019
- 2019-08-29 CN CN201910820743.6A patent/CN110524422A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5957757A (en) * | 1997-10-30 | 1999-09-28 | Lsi Logic Corporation | Conditioning CMP polishing pad using a high pressure fluid |
| JP2003117817A (en) * | 2001-10-09 | 2003-04-23 | Dainippon Printing Co Ltd | Device and method for washing glass polishing device |
| CN1549307A (en) * | 2003-05-15 | 2004-11-24 | 台湾积体电路制造股份有限公司 | Method for cleaning hole material and apparatus thereof |
| CN103619497A (en) * | 2011-06-24 | 2014-03-05 | 杜尔艾科克林有限公司 | Device for treating workpieces |
| CN103252721A (en) * | 2012-02-15 | 2013-08-21 | 台湾积体电路制造股份有限公司 | Cmp pad cleaning apparatus |
| CN103522188A (en) * | 2012-07-02 | 2014-01-22 | 中芯国际集成电路制造(上海)有限公司 | Method for arranging grinding pad, grinding pad arranging device and grinder table |
| CN104416462A (en) * | 2013-08-20 | 2015-03-18 | 上海华虹宏力半导体制造有限公司 | Cleaning device of polishing pad finishing disc |
| CN204053790U (en) * | 2014-04-11 | 2014-12-31 | 元亮科技有限公司 | For the pleasure boat brush of clean polishing disk |
| CN105500208A (en) * | 2016-01-21 | 2016-04-20 | 苏州新美光纳米科技有限公司 | Finishing device for CMP technological polishing pad |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113105865A (en) * | 2021-03-22 | 2021-07-13 | 长江存储科技有限责任公司 | Wafer grinding particles, polishing solution and cleaning system |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191203 |
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| RJ01 | Rejection of invention patent application after publication |