CN105489788B - OLED pixel pattern evaporation coating method and system - Google Patents
OLED pixel pattern evaporation coating method and system Download PDFInfo
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- CN105489788B CN105489788B CN201511019582.9A CN201511019582A CN105489788B CN 105489788 B CN105489788 B CN 105489788B CN 201511019582 A CN201511019582 A CN 201511019582A CN 105489788 B CN105489788 B CN 105489788B
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/162—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using laser ablation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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Abstract
The present invention relates to a kind of OLED pixel pattern evaporation coating method and system, for pattern of pixels to be deposited to TFT backplate, TFT backplate includes substrate, thin film transistor (TFT) array and transparent anode, anode and thin film transistor (TFT) array are distributed in the front of substrate, and anode surface is the distributed areas of pattern of pixels to be deposited.By the way that TFT backplate is placed in above organic material, and anode is towards after the organic material, then with laser to the back scan of substrate, and the region of laser scanning at least includes all regions that anode is covered.Organic material can be deposited in whole distributed areas of anode after the completion of laser scanning, so as to form complete pattern of pixels.Therefore, the OLED pixel pattern evaporation coating method and system need to be only scanned using laser to TFT backplate can complete evaporation, overcome the problem of being unable to meet high-resolution require because FMM techniques are limited in conventional art, improve the resolution ratio of display screen.
Description
Technical field
The present invention relates to OLED display technology fields, more particularly to a kind of OLED pixel pattern evaporation coating method and system.
Background technology
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) Display Technique has self luminous
Characteristic, using very thin coating of organic material and glass substrate, because it has display screen visible angle big, and can be saved
Save electric energy advantage, be widely used to mobile phone, DV, DVD player, personal digital assistant (PDA), notebook computer,
In the product such as automobile audio and TV.In traditional OLED pixel pattern evaporation coating technique, fine metal mask version (FMM) is utilized
Organic material is deposited to glass substrate by perforate, to form pattern of pixels.
However, because market proposes higher and higher resolution requirement to display screen, the pattern of pixels of display screen is more next
It is more intensive.So in traditional OLED pixel pattern evaporation coating technique, the density of the FMM perforates of design is also increasing, so that
So that traditional OLED pixel pattern evaporation coating technique is unable to meet high-resolution requirement due to FMM technique limitation.
The content of the invention
Based on this, for above-mentioned traditional OLED pixel pattern evaporation coating technique because FMM technique limitation is unable to completely
Foot is high-resolution the problem of require, the present invention provides a kind of OLED pixel pattern evaporation coating method and system, it is possible to increase display
The resolution ratio of screen.
A kind of OLED pixel pattern evaporation coating method, for pattern of pixels to be deposited to TFT backplate, the TFT backplate includes base
Plate, thin film transistor (TFT) array and transparent anode, the anode and thin film transistor (TFT) array are distributed in the front of the substrate, and
The surface of the anode is the distributed areas of pattern of pixels to be deposited；The OLED pixel pattern evaporation coating method includes：
The TFT backplate is placed in above the organic material, and the anode is towards the organic material；
With back scan from laser to the substrate, and the laser scanning region at least include the anode cover
All regions.
In one of the embodiments, in addition to：The organic material is coated on platform substrate.
In one of the embodiments, in addition to：Laser is set above the TFT backplate.
In one of the embodiments, the pattern of pixels includes some sub-pixel patterns, and the anode surface is to wait to steam
Plate sub-pixel pattern distributed areas, and with back scan from laser to the substrate the step of before also include：
Being set between the laser and the TFT backplate includes the lithography mask version of some perforates；Wherein, it is each described
Perforate corresponds to the distributed areas of the sub-pixel pattern of same color, and the area of the perforate is distributed more than corresponding sub-pixel pattern
The area in region, and the perforate area be less than or equal to be located at all sub-pixels adjacent with the corresponding sub-pixel pattern
The area in the region between pattern.
In one of the embodiments, being set between the laser and the TFT backplate includes the light of some perforates
Also include after the step of carving mask plate：Adjust the position of the lithography mask version so that the perforate alignment color has with described
The distributed areas of the consistent sub-pixel pattern of machine material color.
In one of the embodiments, the pattern of pixels includes some sub-pixel patterns, and the anode surface is to wait to steam
Plate sub-pixel pattern distributed areas, with back scan from laser to the substrate the step of before also include：
In the backsize photoresist of the TFT backplate；
The photoresist is exposed and developed using lithography mask version, and the figure of the lithography mask version, meet
So that each region that developer solution is dissolved in the photoresist corresponds to the condition of the sub-pixel pattern distributed areas of same color.
In one of the embodiments, the corresponding sub-pixel pattern in all regions of developer solution is dissolved in the photoresist
Color and the solid colour of the organic material.
A kind of OLED pixel pattern deposition system, for pattern of pixels to be deposited to TFT backplate, the OLED pixel pattern steams
Plating system includes platform substrate, TFT backplate and the laser for being used to be coated with organic material；The TFT backplate includes substrate, film
Transistor array and transparent anode, the anode and thin film transistor (TFT) array are distributed in the front of the substrate, and the sun
Pole surface is the distributed areas of pattern of pixels to be deposited；
The laser, when the anode is towards the organic material, with back scan from laser to the substrate, and
The region of the laser scanning at least includes all regions that the anode is covered.
In one of the embodiments, the pattern of pixels includes some sub-pixel patterns, and the anode surface is to wait to steam
Plate the distributed areas of sub-pixel pattern；Being additionally provided between the laser and TFT backplate includes the photo etched mask of some perforates
Version；Wherein, each perforate corresponds to the distributed areas of the sub-pixel pattern of same color, and the perforated area is more than correspondence
The area of pattern of pixels distributed areas, and the perforate area be less than or equal to be located at the institute adjacent with the sub-pixel pattern
There is the area in the region between sub-pixel pattern.
In one of the embodiments, the pattern of pixels includes some sub-pixel patterns, and the anode surface is to wait to steam
Plate the distributed areas of sub-pixel pattern；The OLED pixel pattern deposition system also includes lithography mask version, exposure sources and shown
Shadow equipment, and in the backsize photoresist of the TFT backplate；The exposure sources, for by the lithography mask version and institute
TFT backplate is stated to be aligned and expose；The developing apparatus, for by the photoresist developing；The figure of the lithography mask version is full
Foot causes each region for being dissolved in developer solution in the photoresist to correspond to the condition of the sub-pixel pattern distributed areas of same color.
Above-mentioned OLED pixel pattern evaporation coating method and system have the advantage that for：The OLED pixel pattern evaporation coating method
And system, for pattern of pixels to be deposited in TFT backplate.Simultaneously in TFT backplate, anode surface is pattern of pixels to be deposited
Distributed areas, and only anode printing opacity.On this basis, TFT backplate is placed in above organic material, and anode is towards organic material
After material, then with laser to the back scan of substrate, due to only having anode printing opacity, therefore laser can be by organic material by anode
It is deposited in anode surface.Further, since the region of laser scanning at least includes all regions that anode is covered, when laser scanning is complete
Organic material can be deposited in whole distributed areas of anode after, so as to form complete pattern of pixels.
Therefore, TFT backplate need to be only scanned using laser can be complete for the OLED pixel pattern evaporation coating method and system
Into evaporation, without considering under high-resolution requirement because of the series of process difficulty brought using FMM, conventional art is overcome
It is middle the problem of be unable to meet high-resolution require because FMM techniques are limited, improve the resolution ratio of display screen.
Brief description of the drawings
Fig. 1 is the step flow chart of the OLED pixel pattern evaporation coating method of first embodiment.
Fig. 2 is structural representation corresponding with the OLED pixel pattern evaporation coating method of embodiment illustrated in fig. 1.
Fig. 3 is the flow chart of the OLED pixel pattern evaporation coating method of second embodiment.
Fig. 4 is structural representation corresponding with the OLED pixel pattern evaporation coating method of embodiment illustrated in fig. 3.
Fig. 5 is the flow chart of the OLED pixel pattern evaporation coating method of 3rd embodiment.
Fig. 6 is structural representation corresponding with step S340 in the OLED pixel pattern evaporation coating method of embodiment illustrated in fig. 5.
Fig. 7 is structural representation corresponding with the OLED pixel pattern evaporation coating method of embodiment illustrated in fig. 5.
Embodiment
The OLED pixel pattern evaporation coating method of the invention provided and system are explained in order to clearer, with reference to embodiments
Explain, wherein, OLED is equipped with switching function using active drive mode, i.e. each pattern of pixels
Thin film transistor (TFT) (Thin Film Transistor, TFT), so that each pixel independently be adjusted.
In the first embodiment, Fig. 1 is the flow chart of the OLED pixel pattern evaporation coating method of first embodiment.Fig. 2 be with
The corresponding structural representation of OLED pixel pattern evaporation coating method of embodiment illustrated in fig. 1.
As shown in Figure 1 and Figure 2, OLED pixel pattern evaporation coating method, for pattern of pixels to be deposited to TFT backplate 110.Should
TFT backplate 110 includes substrate, thin film transistor (TFT) array and transparent anode.Wherein, thin film transistor (TFT) array and anode are distributed
In the front 111 of substrate, and thin film transistor (TFT) array and anode are formed by way of photoetching.It should be noted that substrate
Front 111 and the back side 112, respectively surface are to two sides that are opposite and being parallel to each other.Meanwhile, in the TFT backplate 110
On, anode surface is the distributed areas of pattern of pixels to be deposited, the i.e. distributed areas of anode and the distribution of pattern of pixels to be deposited
Region is corresponded, and only anode printing opacity.
The OLED pixel pattern evaporation coating method that first embodiment is provided specifically includes following steps.
S110, organic material 120 is coated on platform substrate 130.
It is understood that a kind of not above-mentioned situations of step S110, if for example performing OLED pixel pattern evaporation
Before method, organic material 120 is coated on platform substrate 130, then step S110 can be omitted.
S120, as shown in Fig. 2 TFT backplate 110 is placed in into the top of organic material 120, and anode is towards organic material 120,
I.e. the front 111 of substrate is towards organic material 120, and the back side 112 of substrate is away from organic material 120, to cause organic material
120 can be deposited to anode surface.
S130, the setting laser 140 above TFT backplate 110, that is to say, that laser 140 is the back side 112 with substrate
Relatively.
It is understood that a kind of not above-mentioned situations of step S130, if for example performing OLED pixel pattern evaporation
Before method, the top of TFT backplate 110 is provided with laser 140, then step S130 can be omitted.
S140, scanned to the back side 112 of substrate with laser, and laser scanning region at least include that anode covers it is all
Region.
After laser is irradiated to the back side 112 of substrate in TFT backplate 110, due to only having anode printing opacity in TFT backplate 110,
Therefore laser can only by the distributed areas of anode, and be directed in organic material 120 with anode just to part.Afterwards, have
Machine material 120 can be deposited to anode surface in the presence of laser, so as to form pattern of pixels.Simultaneously because laser scanning
Region at least includes all regions that anode is covered, therefore after the completion of laser scanning, you can all anode distribution areas of traversal
Domain, so that organic material 120 is finally deposited in whole distributed areas of anode.And because anode surface is pixel to be deposited
The distributed areas of pattern, therefore complete pattern of pixels is finally formed in TFT backplate 110.
In addition to economizing on resources, all regions covered to anode, and organic material 120 can be scanned in guarantee laser
Just it is deposited completely when all distributed areas of anode, then can control the overlay area of laser only scan anode.
In summary, in the first embodiment, the OLED pixel pattern evaporation coating method only need to be using laser to TFT backplate
110 are scanned and can complete evaporation, without considering under high-resolution requirement because the series of process brought using FMM is difficult
Degree, overcomes the problem of being unable to meet high-resolution require because FMM techniques are limited in conventional art, improves display screen
Resolution ratio.
In a second embodiment, Fig. 3 is the flow chart of the OLED pixel pattern evaporation coating method of second embodiment.Fig. 4 be with
The corresponding structural representation of OLED pixel pattern evaporation coating method of embodiment illustrated in fig. 3.
As shown in Figure 3, Figure 4, the OLED pixel pattern evaporation coating method that second embodiment is provided, is equally used for TFT backplate
210 evaporation pattern of pixels, and pattern of pixels includes some sub-pixel patterns.The TFT backplate 210 includes substrate, thin film transistor (TFT)
Array and transparent anode.Wherein, thin film transistor (TFT) array and anode are distributed in the front 211 of substrate.It should be noted that
The front 211 of substrate and the back side 212, respectively surface are to two sides that are opposite and being parallel to each other.Meanwhile, in the TFT back ofs the body
On plate 210, anode surface is the distributed areas of sub-pixel pattern to be deposited, the i.e. distributed areas of anode and sub-pixel map to be deposited
The distributed areas of case are corresponded, and only anode printing opacity.
The OLED pixel pattern evaporation coating method that second embodiment is provided specifically includes following steps.
S210, organic material 220 is coated on platform substrate 230.
It is understood that a kind of not above-mentioned situations of step S210, if for example performing OLED pixel pattern evaporation
Before method, organic material 220 is coated on platform substrate 230, then step S110 can be omitted.
S220, as shown in figure 4, TFT backplate 210 is placed in into the top of organic material 220, and anode is towards organic material 220,
I.e. the front 211 of substrate is towards organic material 220, and the back side 212 of substrate is away from organic material 220, to cause organic material
220 can be deposited to anode surface.
S230, the setting laser 240 above TFT backplate 210, that is to say, that laser 240 is the back side 212 with substrate
Relatively.
It is understood that a kind of not above-mentioned situations of step S230, if for example performing OLED pixel pattern evaporation
Before method, the top of TFT backplate 210 is provided with laser 240, then step S230 can be omitted.
S240, the setting lithography mask version 250 between laser 240 and TFT backplate 210.
Lithography mask version 250 includes some perforates.Wherein each perforate corresponds to the distribution of the sub-pixel pattern of same color
Region.That is, all perforates on the lithography mask version 250 can only be directed at the whole of same color in each use
The distributed areas of sub-pixel pattern, for example, be only directed at the distributed areas of R color sub-pixels patterns.In addition in a second embodiment,
The layout of perforate is different from conventional method, and is specially：The area of perforate is more than the area of corresponding sub-pixel pattern distributed areas,
And the area of perforate is less than or equal to the area being located between all sub-pixel patterns adjacent with the perforate corresponding sub-pixel pattern
The area in domain.That is, compared with conventional method, the lithography mask version 250 of the second embodiment offer manufacture craft of itself
It is more ripe, along with the area of perforate is larger, that is, ensureing that perforate is sized to include corresponding sub-pixel pattern completely
Other parts region is also extend to outside distributed areas, so as to reduce further the difficulty of manufacture craft, height is easy to implement
Resolution requirement.
S250, the position for adjusting lithography mask version 250 so that perforate is directed at color and the solid colour of organic material 220
The distributed areas of sub-pixel pattern.That is, if organic material 220 is R colors, adjustment perforate is directed at R color sub-pixels
The region of pattern, in order to which the organic material 220 of R colors is deposited in the distributed areas of the R color sub-pixels patterns, so that at this
Region forms the R color sub-pixels patterns.Afterwards, to another color, such as G colors, then by lithography mask version 250 is deposited
Certain distance is translated, so that perforate is directed at the distributed areas of G color sub-pixels patterns.
S260, scanned to the back side 212 of substrate with laser, and laser scanning region at least include that anode covers it is all
Region.
In a second embodiment, lithography mask version 250 and TFT backplate are included between laser 240 and organic material 220
210, due to the equal printing opacity of anode in the perforate in lithography mask version 250 and TFT backplate 210, therefore final laser has been exposed to
The region of machine material 220 is together decided on by perforate and anode.
Wherein, lithography mask version 250 is increased in the transmission path of laser, advantage is to be steamed in TFT backplate 210
When plating colour element pattern, then the color for the sub-pixel pattern being deposited every time can be limited by perforate.Simultaneously because respectively opening
Hole corresponds to the distributed areas of the sub-pixel pattern of same color, and the region of laser scanning at least includes all of anode covering
Region, therefore organic material 220 can be deposited in the distributed area of whole sub-pixel patterns of same color after evaporation every time
Domain, so as to form the complete pattern of the color sub-pixels.If a R color corresponding in TFT backplate 210 when being for example deposited for the first time
The position of moving photoetching mask plate 250 after the completion of the organic material of R colors, evaporation is deposited in the distributed areas of sub-pixel pattern, then
The organic material ... of the distributed areas evaporation G colors of correspondence G color sub-pixels patterns is in this way, finally can in TFT backplate 210
Complete colour element pattern is formed in TFT backplate 210.
In addition, though the perforated area in lithography mask version 250 is more than the area of corresponding sub-pixel pattern distributed areas, but
Due in the transmission path of laser and organic material 220, also to be restricted except being restricted by perforated area by anode, i.e.,
Make the area that laser is irradiated by light beam after perforate beyond the distributed areas of the sub-pixel pattern, but because anode surface is with treating
Sub-pixel pattern distributed areas are deposited to correspond, and anode does not include the region outside sub-pixel pattern to be deposited, therefore swash
Light light beam is passed through by that can limit the light beam outside the sub-pixel pattern distributed areas after anode, so as to ensure finally still
So can be accurately only to that organic material should be deposited in the distributed areas of sub-pixel pattern.
In addition, in order to economize on resources, all regions of scan anode covering, and organic material 220 are capable of in guarantee laser
Just it is deposited completely when all distributed areas of anode, then can control the overlay area of laser only scan anode.
In summary, in a second embodiment, the OLED pixel pattern evaporation coating method is remained able to only using laser to TFT
Backboard 210, which is scanned, can complete evaporation, without considering under high-resolution requirement because of a series of works brought using FMM
Skill difficulty, overcomes the problem of being unable to meet high-resolution require because FMM techniques are limited in conventional art, improves aobvious
The resolution ratio of display screen.
In addition, when colour element pattern if desired is deposited, the He of lithography mask version 250 can also be passed through in second embodiment
The anode of TFT backplate 210 is deposited the sub-pixel pattern of different colours respectively.Although having used lithography mask version 250, due to
Perforated area is larger, therefore remains able to ensure that whole technique is relatively simple.Therefore, second embodiment is remaining able to overcome biography
On the basis of being unable to because FMM techniques are limited to meet the problem of high-resolution is required in system technology, moreover it is possible to colour element is deposited
Pattern, expands application.
In the third embodiment, Fig. 5 is the flow chart of the OLED pixel pattern evaporation coating method of 3rd embodiment.Fig. 7 be with
The corresponding structural representation of OLED pixel pattern evaporation coating method of embodiment illustrated in fig. 5.
As shown in Figure 5, Figure 7, the OLED pixel pattern evaporation coating method that 3rd embodiment is provided, is equally used for TFT backplate
310 evaporation pattern of pixels, and pattern of pixels includes some sub-pixel patterns.The TFT backplate 310 includes substrate, thin film transistor (TFT)
Array and transparent anode.Wherein, thin film transistor (TFT) array and anode are coated with the front 311 of substrate.It should be noted that
The front 311 of substrate and the back side 312, respectively surface are to two sides that are opposite and being parallel to each other.Meanwhile, in the TFT back ofs the body
On plate 310, anode surface is the distributed areas of sub-pixel pattern to be deposited, the i.e. distributed areas of anode and sub-pixel map to be deposited
The distributed areas of case are corresponded, and only anode printing opacity.
The OLED pixel pattern evaporation coating method that 3rd embodiment is provided specifically includes following steps.
S310, organic material 320 is coated on platform substrate 330.
It is understood that a kind of not above-mentioned situations of step S310, if for example performing OLED pixel pattern evaporation
Before method, organic material 320 is coated on platform substrate 330, then step S310 can be omitted.
S320, as shown in figure 4, TFT backplate 310 is placed in into the top of organic material 320, and anode is towards organic material, i.e.,
The front 311 of substrate is towards organic material 320, and the back side 312 of substrate is away from organic material 320, to cause organic material 320
It can be deposited to anode surface.
S330, the setting laser 340 above TFT backplate 310, that is to say, that laser 340 is the back side 312 with substrate
Relatively.
It is understood that a kind of not above-mentioned situations of step S330, if for example performing OLED pixel pattern evaporation
Before method, the top of TFT backplate 310 is provided with laser 340, then step S330 can be omitted.
S340, as shown in fig. 6, in the backsize photoresist 350 of TFT backplate 310.Wherein, the back side of TFT backplate 310
The specially back side 312 of substrate.
S350, using lithography mask version photoresist 350 is exposed and developed.Wherein the figure of lithography mask version, full
Foot causes each region for being dissolved in developer solution in photoresist to correspond to the condition of the sub-pixel pattern distributed areas of same color.Also
It is to say, when evaporation different colours sub-pixel pattern, the photo etched mask of correspondence different colours sub-pixel pattern need to be separately designed
Version.
Specifically, by taking R color sub-pixels patterns as an example, if photoresist 350 is negative photoresist, in lithography mask version
Each alternatively non-transparent region corresponds to the distributed areas of the sub-pixel pattern of R colors；If photoresist 350 is positive photoetching rubber, photoetching is covered
Each transmission region in film version corresponds to the distributed areas of the sub-pixel pattern of R colors.
S360, it is scanned to the back side 312 of substrate with laser, and the region of laser scanning at least includes what anode was covered
All regions.
In the third embodiment, the light transmission path between laser 340 and organic material 320 includes the light after development
Photoresist 350 and TFT backplate 310.The region that developer solution is dissolved in after developing due to photoresist 350 being capable of printing opacity, and TFT backplate 310
In anode printing opacity, therefore final laser expose to organic material 320 region be by photoresist 350 develop after be dissolved in developer solution
Region and anode together decide on.
Increase photoresist 350 wherein in the transmission path of laser, advantage is color to be deposited in TFT backplate 310
During color pixel pattern, then the color for the sub-pixel pattern being deposited every time can be limited by photoresist 350.Simultaneously because photoetching
Glue 350 is dissolved in the distributed areas that the region of developer solution corresponds to the sub-pixel pattern of same color after developing, and laser scanning
Region at least includes all regions that anode is covered, therefore organic material 320 can be deposited in same face after evaporation every time
The distributed areas of whole sub-pixel patterns of color, so as to form the complete pattern of the color sub-pixels.For example when being deposited for the first time,
Development only is exposed using the lithography mask version of correspondence R color sub-pixels patterns in TFT backplate 310, laser is recycled afterwards
The organic material of R colors is deposited in the distributed areas of correspondence R color sub-pixels patterns on the anode surface of TFT backplate 310；Evaporation
After the completion of recycle the lithography mask version of correspondence G color sub-pixels patterns to be exposed, develop, finally carried on the back using laser in TFT
The organic material ... of the distributed areas evaporation G colors of correspondence G color sub-pixels patterns is in this way, final on the anode surface of plate 310
Colour element pattern can be formed in TFT backplate 310.
In addition, in order to economize on resources, all regions of scan anode covering, and organic material 320 are capable of in guarantee laser
Just it is deposited completely when all distributed areas of anode, then can control the overlay area of laser only scan anode.
In summary, in the third embodiment, the OLED pixel pattern evaporation coating method is remained able to only using laser to TFT
Backboard 310, which is scanned, can complete evaporation, without considering under high-resolution requirement because of a series of works brought using FMM
Skill difficulty, overcomes the problem of being unable to meet high-resolution require because FMM techniques are limited in conventional art, improves aobvious
The resolution ratio of display screen.
In addition, when colour element pattern if desired is deposited, it is molten after can also being developed in 3rd embodiment by photoresist 350
The sub-pixel pattern of different colours is deposited respectively in the anode of the region of developer solution and TFT backplate 310.While 3rd embodiment
It is remote in the difficulty of process aspect because photoetching is more ripe technique although having used process exposed and developed in photoetching
Far below the manufacture craft of conventional fine metal mask version, therefore remain able to ensure that whole technique is relatively simple.Therefore, the 3rd
Embodiment is in remaining able to overcome conventional art because of the limited base for being unable to meet the problem of high-resolution is required of FMM techniques
On plinth, moreover it is possible to colour element pattern is deposited, application is expanded.
OLED pixel pattern deposition system is also disclosed in last the application, equally, for pixel map to be deposited to TFT backplate
Case.The OLED pixel pattern evaporation coating method provided corresponding to first embodiment, the OLED pixel pattern deposition system includes coating
Platform substrate, TFT backplate and the laser of organic material.Wherein, TFT backplate includes substrate, thin film transistor (TFT) array and transparent
Anode, anode and thin film transistor (TFT) array are distributed in the front of substrate, and anode surface is the distribution of pattern of pixels to be deposited
Region.Laser, when anode is towards organic material, with laser towards substrate back scan, and laser scanning region extremely
Include all regions that anode is covered less.
In addition, the OLED pixel pattern evaporation coating method provided corresponding to second embodiment, OLED pixel pattern evaporation system
In system, pattern of pixels includes some sub-pixel patterns, and anode surface is the distributed areas of sub-pixel pattern to be deposited.Exist simultaneously
Being additionally provided between laser and TFT backplate includes the lithography mask version of some perforates.Wherein, perforate corresponds to the son of same color
The distributed areas of pattern of pixels, perforated area is more than the area of corresponding sub-pixel pattern distributed areas, and the area of perforate is less than
Or equal to the area in the region between all sub-pixel patterns adjacent with sub-pixel pattern.
The OLED pixel pattern evaporation coating method provided corresponding to above-mentioned 3rd embodiment, the OLED pixel pattern deposition system
In, pattern of pixels includes some sub-pixel patterns, and anode surface is the distributed areas of sub-pixel pattern to be deposited.Also wrap simultaneously
Lithography mask version, exposure sources and developing apparatus are included, and in the backsize photoresist of TFT backplate.Exposure sources, for by light
Mask plate is carved to be aligned and expose with TFT backplate.The figure of lithography mask version, meets each area for make it that developer solution is dissolved in photoresist
Domain corresponds to the condition of the sub-pixel pattern distributed areas of same color.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Above example only expresses the several embodiments of the present invention, and its description is more specific, but can not therefore and
It is construed as limiting the scope of the patent.It should be noted that for the person of ordinary skill of the art, not departing from this
On the premise of inventive concept, various modifications and improvements can be made, these belong to protection scope of the present invention.Therefore, originally
The protection domain of patent of invention should be determined by the appended claims.
Claims (10)
1. a kind of OLED pixel pattern evaporation coating method, it is characterised in that for pattern of pixels, the TFT back ofs the body to be deposited to TFT backplate
Plate includes substrate, thin film transistor (TFT) array and transparent anode, and the anode and thin film transistor (TFT) array are distributed in the substrate
Front, and the anode surface be pattern of pixels to be deposited distributed areas；The OLED pixel pattern evaporation coating method bag
Include：
The TFT backplate is placed in above organic material, and the anode is towards the organic material；
With back scan from laser to the substrate, and the laser scanning region at least include that the anode covers it is all
Region.
2. OLED pixel pattern evaporation coating method according to claim 1, it is characterised in that also include：By organic material
Material is coated on platform substrate.
3. OLED pixel pattern evaporation coating method according to claim 1, it is characterised in that also include：In the TFT backplate
Top sets laser.
4. OLED pixel pattern evaporation coating method according to claim 3, it is characterised in that the pattern of pixels includes some
Sub-pixel pattern, the anode surface is the distributed areas of sub-pixel pattern to be deposited, and with laser to the back side of the substrate
Also included before the step of scanning：
Being set between the laser and the TFT backplate includes the lithography mask version of some perforates；Wherein, each perforate
The distributed areas of the sub-pixel pattern of same color are corresponded to, the area of the perforate is more than corresponding sub-pixel pattern distributed areas
Area, and the perforate area be less than or equal to be located at all sub-pixel patterns adjacent with the corresponding sub-pixel pattern
Between region area.
5. OLED pixel pattern evaporation coating method according to claim 4, it is characterised in that in the laser and described
Also include after the step of including the lithography mask version of some perforates is set between TFT backplate：Adjust the position of the lithography mask version
Put so that the perforate alignment color and the distributed areas of the sub-pixel pattern of the organic material solid colour.
6. OLED pixel pattern evaporation coating method according to claim 1, it is characterised in that the pattern of pixels includes some
Sub-pixel pattern, the anode surface is the distributed areas of sub-pixel pattern to be deposited, is swept with the back side of laser to the substrate
Also include before the step of retouching：
In the backsize photoresist of the TFT backplate；
The photoresist is exposed and developed using lithography mask version, and the figure of the lithography mask version, meet and cause
The condition of the sub-pixel pattern distributed areas of the corresponding same color in each region of developer solution is dissolved in the photoresist.
7. OLED pixel pattern evaporation coating method according to claim 6, it is characterised in that development is dissolved in the photoresist
The color of the corresponding sub-pixel pattern in all regions of liquid and the solid colour of the organic material.
8. a kind of OLED pixel pattern deposition system, it is characterised in that for pattern of pixels, the OLED to be deposited to TFT backplate
Pattern of pixels deposition system includes platform substrate, TFT backplate and the laser for being used to be coated with organic material；The TFT backplate bag
Substrate, thin film transistor (TFT) array and transparent anode are included, the anode and thin film transistor (TFT) array are being distributed in the substrate just
Face, and the anode surface is the distributed areas of pattern of pixels to be deposited；
The laser, when the anode is towards the organic material, with back scan from laser to the substrate, it is and described
The region of laser scanning at least includes all regions that the anode is covered.
9. OLED pixel pattern deposition system according to claim 8, it is characterised in that the pattern of pixels includes some
Sub-pixel pattern, the anode surface is the distributed areas of sub-pixel pattern to be deposited；Between the laser and TFT backplate
Being additionally provided with includes the lithography mask version of some perforates；Wherein, each perforate corresponds to point of the sub-pixel pattern of same color
Cloth region, the perforated area is more than the area of corresponding sub-pixel pattern distributed areas, and the area of the perforate is less than or waited
Area in the region between all sub-pixel patterns adjacent with the sub-pixel pattern.
10. OLED pixel pattern deposition system according to claim 8, it is characterised in that if the pattern of pixels includes
Dry sub-pixel pattern, the anode surface is the distributed areas of sub-pixel pattern to be deposited；The OLED pixel pattern evaporation system
System also includes lithography mask version, exposure sources and developing apparatus, and in the backsize photoresist of the TFT backplate；It is described to expose
Light device, for the lithography mask version to be aligned and expose with the TFT backplate；The developing apparatus, for by the light
Photoresist is developed；The figure of the lithography mask version, meets and causes each region for being dissolved in developer solution in the photoresist is corresponded to same
Plant the condition of the sub-pixel pattern distributed areas of color.
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| CN109560196B (en) * | 2018-11-28 | 2020-08-04 | 武汉华星光电半导体显示技术有限公司 | Preparation method of display panel and display panel |
| US10923687B2 (en) | 2018-11-28 | 2021-02-16 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Manufacturing method of display panel and display panel |
| CN111384303B (en) * | 2018-12-28 | 2022-01-18 | Tcl科技集团股份有限公司 | Preparation method of film layer and quantum dot light-emitting diode |
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