CN105489631A - Organic light-emitting display device and preparation method thereof - Google Patents
Organic light-emitting display device and preparation method thereof Download PDFInfo
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- CN105489631A CN105489631A CN201510975405.1A CN201510975405A CN105489631A CN 105489631 A CN105489631 A CN 105489631A CN 201510975405 A CN201510975405 A CN 201510975405A CN 105489631 A CN105489631 A CN 105489631A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
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Abstract
The invention relates to an organic light-emitting display device capable of preventing adjacent pixels from being shorted out. The organic light-emitting display device comprises a substrate and a pixel defining layer, wherein the pixel defining layer forms a continuous grid structure; pixel units are formed in the continuous grid structure; and an isolating structure for preventing the adjacent pixel units from being shorted out is arranged in the pixel defining layer. According to the organic light-emitting display device provided by the invention, by the isolating structure arranged on the pixel defining layer, the problem that an existing OLED device easily generates a transverse short circuit is effectively solved; and the existing device efficiency can be kept.
Description
Technical field
The present invention relates to a kind of organic light-emitting display device, particularly relate to and a kind ofly can prevent organic light-emitting display device of neighbor short circuit and preparation method thereof.
Background technology
Organic Light Emitting Diode (OrganicLight-emittingDiode, be called for short OLED) there is active illuminating, luminous efficiency is high, the response time is fast, operating voltage is low, visual angle is wide, contrast is high, operating temperature range is wide, can realize the advantages such as Flexible Displays, is therefore described as third generation Display Technique after CRT, LCD.
OLED pixel map patterning mainly adopts vacuum evaporation and adds the method formation of masking film, and adjacent subpixels adopts the organic photoresist after solidifying as isolation barrier.In actual process process, organic photoresist often adopts positive photoresist, and the slope angle that pattern edge makes is smaller, thus very mild in its slope angle after baking-curing.Organic material graphically general in particular functional layer, as luminescent layer and layer of compensation, and other OLED utility layer is all graphical, namely adopts public mask plate (CMmask) evaporation.After adopting CMmask evaporation, the utility layer for all pixels is laterally connected, and as implanted layer and transport layer are whole film forming, for the organic material of semiconductor, therefore there is transverse conductance may.
As shown in Figure 1, existing organic electroluminescence device, the pixel confining layers 2, first electrode layer 3 (anode) comprising substrate and formed on substrate, the first organic function layer 42 (hole injection layer and hole transmission layer), luminescent layer 41 and the second organic function layer 43 (electron transfer layer and electron injecting layer) is stacking is arranged between pixel confining layers 2.Because the slope angle of current pixel confining layers 2 (photoresist) pattern edge is very little, the short circuit of neighbor can be reduced by reducing material mobility because charge carrier conduction in the distance of transverse movement much larger than vertical direction.After organic material mobility improves or between neighbor after Distance Shortened, there is horizontal short circuit in neighbor OLED, causes device to close continuous consequence.Solution reduces the possibility of OLED neighbor short circuit, thus sacrifices device efficiency.
Summary of the invention
Technical problem to be solved by this invention is that the horizontal short circuit of existing solution OLED is the problem by reducing organic material lateral transfer rate and then reduction device efficiency, thus a kind of OLED is provided, it adopts and arrange isolation structure in pixel confining layers, easily there is horizontal short circuit in the existing OLED of effective solution, and can keep existing device efficiency.
For solving the problems of the technologies described above, the present invention is achieved by the following technical solutions:
A kind of organic light-emitting display device, comprise substrate and pixel confining layers, described pixel confining layers forms continuous grids structure, is formed with pixel cell, is provided with the isolation structure preventing adjacent pixel unit short circuit in described pixel confining layers in described continuous grids structure.
Described isolation structure is the isolation channel running through described pixel confining layers, and described pixel confining layers is divided into independently two parts by described isolation channel.
The cell wall of described isolation channel and the angle of described substrate are 60 °-90 °, and the cross-sectional area at described isolation channel top is more than or equal to the cross-sectional area of bottom.
Described organic light-emitting display device is top-illuminating OLED device, and in continuous grids structure, superposition is provided with the first electrode layer, organic luminous layer and the second electrode lay, and the height of described pixel confining layers is at least the twice of organic light emission layer thickness.
The thickness of described pixel confining layers is greater than the thickness sum of organic luminous layer and the second electrode lay, and the top of described the second electrode lay is formed with light transmitting electro-conductive polymeric layer.
Also comprise encapsulating film, described encapsulating film and described substrate form closed area, and described pixel confining layers, pixel cell and light transmitting electro-conductive polymeric layer are positioned at described closed area.
Described organic light-emitting display device is end emitting OLED-device, in continuous grids structure, superposition is provided with the first electrode layer and organic luminous layer, the top of described pixel confining layers and organic luminous layer is formed with the second electrode lay, described first electrode layer, organic luminous layer and the second electrode lay form described pixel cell, and the thickness sum of described organic luminous layer and the second electrode lay is greater than the height of described pixel confining layers.
Described pixel confining layers is organic photoresist layer.
Prevent a preparation method for the organic light-emitting display device of neighbor short circuit, comprise the steps:
S11, substrate make conductive layer and graphical forms some first electrode layers, applying organic photoresist layer at the first electrode layer, and form pixel confining layers through exposure imaging and run through the isolation channel of described pixel confining layers;
The mode of S12, employing evaporation deposits organic luminous layer and the second electrode lay successively, and the gross thickness of described organic luminous layer is less than the thickness of pixel confining layers, and described organic luminous layer and the second electrode lay thickness sum are greater than the thickness of pixel confining layers.
Prepare a preparation method for organic light-emitting display device, comprise the steps:
S21, substrate make conductive layer and graphical forms some first electrode layers, applying organic photoresist layer at the first electrode layer, and form pixel confining layers through exposure imaging and run through the isolation channel of described pixel confining layers;
The mode of S22, employing evaporation deposits organic luminous layer and the second electrode lay successively, and described organic luminous layer and the second electrode lay thickness sum are less than the thickness of pixel confining layers, and the height of described pixel confining layers is at least the twice of organic light emission layer thickness;
S23, above described the second electrode lay adopt atomization film forming or low temperature rapid evaporation mode deposit light transmitting electro-conductive polymeric layer, the thickness of described light transmitting electro-conductive polymeric layer is greater than 2um.
Technique scheme of the present invention has the following advantages compared to existing technology:
1, of the present inventionly a kind of organic light-emitting display device is provided, by arranging the isolation structure preventing adjacent pixel unit short circuit in pixel confining layers, described isolation structure is the isolation channel running through described pixel confining layers, and described pixel confining layers is divided into independently two parts by described isolation channel.The present invention, by changing dot structure, effectively reduces the relevance of OLED neighbor organic layer, OLED utility layer material can be made thoroughly to disconnect, thus effectively prevents short circuit phenomenon between neighbor from occurring, and solves device and closes continuous phenomenon.
2, isolation structure of the present invention is the isolation channel running through described pixel confining layers, described pixel confining layers is divided into independently two parts by described isolation channel, the cell wall of isolation channel and the angle of described substrate are 60 °-90 °, arranged by this high angle slope angle, neighbor OLED organic layer can be made thoroughly to disconnect, avoid the possibility of short circuit.
The gross thickness of general organic assembly layer is no more than 500nm at present, and at more than 1.2um after the solidification of the organic gel of pixel confining layers,
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below in conjunction with accompanying drawing, the present invention is further detailed explanation, wherein,
Fig. 1 is the structural representation of prior art;
Fig. 2 is the structural representation of isolation structure of the present invention;
Fig. 3 is the structural representation of the luminous organic light-emitting display device in the end of the present invention;
Fig. 4 is the structural representation of the luminous organic light-emitting display device in top of the present invention;
In figure, Reference numeral is expressed as:
1-substrate, 2-pixel confining layers, 3-first electrode layer, 4-organic luminous layer, 5-the second electrode lay, 7-isolation channel, 8-light transmitting electro-conductive polymeric layer, 9-encapsulating film, 41-luminescent layer, 42-first organic function layer, 43-second organic function layer.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
The present invention can implement in many different forms, and should not be understood to be limited to embodiment set forth herein.On the contrary, provide these embodiments, make the disclosure to be thorough and complete, and design of the present invention fully will be conveyed to those skilled in the art, the present invention will only be limited by claim.In the accompanying drawings, for clarity, the size in layer and region and relative size can be exaggerated.Should be understood that, when element such as layer, region or substrate be referred to as " being formed in " or " being arranged on " another element " on " time, this element can be set directly on another element described, or also can there is intermediary element.On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, there is not intermediary element.
As shown in Figure 3 and Figure 4, a kind of organic light-emitting display device, comprise substrate 1 and pixel confining layers 2, described pixel confining layers 2 forms continuous grids structure, be formed with pixel cell in described continuous grids structure, in described pixel confining layers 2, be provided with the isolation structure preventing adjacent pixel unit short circuit.Particularly, the isolation structure preventing adjacent pixel unit short circuit is provided with in the pixel confining layers 2 between adjacent pixel unit.
As shown in Figure 2, described isolation structure is the isolation channel 7 running through described pixel confining layers 2, and be provided with isolation channel 7 between the pixel confining layers 2 between the first adjacent electrode layer 3, described pixel confining layers 2 is divided into independently two parts by described isolation channel 7.The cell wall of described isolation channel 7 and the angle of described substrate 1 are 60 °-90 °, and the cross-sectional area at the top of isolation channel 7 shown in Fig. 2 is more than or equal to the cross-sectional area of bottom.Above-mentioned pixel confining layers 2 is organic photoresist layer.
As shown in Figure 3, described organic light-emitting display device is top-illuminating OLED device, and in continuous grids structure, superposition is provided with the first electrode layer 3, organic luminous layer 4 and the second electrode lay 5, and the height of described pixel confining layers 2 is at least the twice of organic luminous layer 4 thickness.The gross thickness of general organic assembly layer is no more than 500nm at present, and at more than 1.2um after the solidification of the organic gel of pixel confining layers 2, therefore the height of pixel confining layers 2 is at least the twice of organic luminous layer 4 thickness.
Organic luminous layer 4 comprises the first organic function layer 42 (hole injection layer and/or hole transmission layer) of stacking setting, luminescent layer 41, the second organic function layer 43 (electron transfer layer and/or electron injecting layer).The thickness of described pixel confining layers 2 is greater than the thickness sum of organic luminous layer 4 and the second electrode lay 5, the top of described the second electrode lay 5 is formed with light transmitting electro-conductive polymeric layer 8, and shown light transmitting electro-conductive polymeric layer 8 can make the second electrode lay 5 of each pixel cell realize electrical connection.
Top-illuminating OLED device also comprises encapsulating film 9, and described encapsulating film 9 forms closed area with described substrate 1, and described pixel confining layers 2, pixel cell and light transmitting electro-conductive polymeric layer 8 are positioned at described closed area.
The preparation method of organic light-emitting display device shown in Fig. 4, comprises the steps:
S21, on substrate 1 making conductive layer also graphically form some first electrode layers 3, apply organic photoresist layer at the first electrode layer 3, and form pixel confining layers 2 and the isolation channel 7 running through described pixel confining layers 2 through exposure imaging;
The mode of S22, employing evaporation deposits organic luminous layer 4 and the second electrode lay 5 successively, described organic luminous layer 4 and the second electrode lay 5 thickness sum are less than the thickness of pixel confining layers 2, and the height of described pixel confining layers 2 is at least the twice of organic luminous layer 4 thickness;
S23, above described the second electrode lay 5 adopt atomization film forming or low temperature rapid evaporation mode deposit light transmitting electro-conductive polymeric layer 8, the thickness of described light transmitting electro-conductive polymeric layer 8 is greater than 2um.
Top luminous display unit shown in Fig. 4 is by changing dot structure, effectively reduce the relevance of OLED neighbor organic layer, OLED utility layer material can be made thoroughly to disconnect, thus effectively prevent short circuit phenomenon between neighbor from occurring, solve device and close continuous phenomenon.
As shown in Figure 3, described organic light-emitting display device is end emitting OLED-device, in continuous grids structure, superposition is provided with the first electrode layer 3 and organic luminous layer 4, the top of described pixel confining layers 2 and organic luminous layer 4 is formed with the second electrode lay 5, described first electrode layer 3, organic luminous layer 4 and the second electrode lay 5 form described pixel cell, and the thickness sum of described organic luminous layer 4 and the second electrode lay 5 is greater than the height of described pixel confining layers 2.Organic luminous layer 4 comprises hole injection layer and/or the hole transmission layer of stacking setting, luminescent layer 41, electron transfer layer and/or electron injecting layer
The preparation method of the organic light-emitting display device shown in Fig. 3, comprises the steps:
S11, on substrate 1 making conductive layer also graphically form some first electrode layers 3, apply organic photoresist layer at the first electrode layer 3, and form pixel confining layers 2 and the isolation channel 7 running through described pixel confining layers 2 through exposure imaging;
The mode of S12, employing evaporation deposits organic luminous layer 4 and the second electrode lay 5 successively, and the gross thickness of described organic luminous layer 4 is less than the thickness of pixel confining layers 2, and described organic luminous layer 4 and the second electrode lay 5 thickness sum are greater than the thickness of pixel confining layers 2.
End luminous display unit shown in Fig. 3 is by changing dot structure, effectively reduce the relevance of OLED neighbor organic layer, OLED utility layer material can be made thoroughly to disconnect, thus effectively prevent short circuit phenomenon between neighbor from occurring, solve device and close continuous phenomenon.
If no special instructions, the device layers in the present invention adopts material as follows:
First electrode layer anode can adopt inorganic material or organic conductive polymer.Inorganic material is generally the higher metal of the work functions such as metal oxide or gold, copper, silver such as tin indium oxide (ITO), zinc oxide (ZnO), indium zinc oxide (IZO), preferred ITO; Organic conductive polymer is preferably the one in polythiophene/polyvinylbenzenesulfonic acid sodium (hereinafter referred to as PEDOT/PSS), polyaniline (hereinafter referred to as PANI).
The second electrode lay negative electrode generally adopts the alloy of metal that the work functions such as lithium, magnesium, calcium, strontium, aluminium, indium are lower or they and copper, gold, silver, or the electrode layer that metal and metal fluoride are alternately formed.In the present invention, negative electrode is preferably Al layer.
The material of hole transmission layer can be selected from arylamine class, carbazoles and branch polymer class low molecule material, preferred NPB and TCTA.
The material of described hole injection layer such as can adopt 2,3,6,7,10,11-six cyano group-1,4,5,8,9,12-six azepine benzophenanthrene HAT-CN, 4,4', 4 "-three (3-aminomethyl phenyl aniline) triphenylamine doped F 4TCNQ, or adopt copper phthalocyanine (CuPc); or can be metal oxide-type, and as molybdenum oxide, rheium oxide.
The luminescent material of luminescent layer can be selected from Coumarins as DMQA or C545T, or two pyran is as fluorescent dyes such as DCJTB or DCM, or containing Ir, Pt, Os, Ru, Rh, Pd, group of the lanthanides, the metal complexs such as actinium series.
The doping content of fluorescent dye in luminescent layer be not higher than 5wt%, and the doping content of phosphorescent coloring in luminescent layer be not higher than 30wt%.Described doping content=dyestuff quality/(dyestuff quality+material of main part quality) × 100%.
The material of main part of luminescent layer can be selected from the material being usually used in host material, as 4,4 '-two (carbazyl-9-) biphenyl CBP.
The material of electron transfer layer of the present invention can adopt the material being usually used in electron transfer layer, as aromatic condensed ring class (as Pentacene, perylene) or o-phenanthroline class (as Bphen, BCP) compound.
Substrate can be glass or flexible substrate, and described flexible substrate can adopt polyesters, polyimide compound-material or foil.Described stacked and encapsulation can adopt any suitable method well known by persons skilled in the art.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to execution mode.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.And thus the apparent change of extending out or variation be still among the protection range of the invention.
Claims (10)
1. an organic light-emitting display device, comprises substrate (1) and pixel confining layers (2), and described pixel confining layers (2) forms continuous grids structure, is formed with pixel cell, it is characterized in that in described continuous grids structure,
The isolation structure preventing adjacent pixel unit short circuit is provided with in described pixel confining layers (2).
2. organic light-emitting display device according to claim 1, it is characterized in that, described isolation structure is for running through the isolation channel (7) of described pixel confining layers (2), and described pixel confining layers (2) is divided into independently two parts by described isolation channel (7).
3. organic light-emitting display device according to claim 2, it is characterized in that, the cell wall of described isolation channel (7) and the angle of described substrate (1) are 60 °-90 °, and the cross-sectional area at described isolation channel (7) top is more than or equal to the cross-sectional area of bottom.
4. organic light-emitting display device according to any one of claim 1-3, it is characterized in that, described organic light-emitting display device is top-illuminating OLED device, in continuous grids structure, superposition is provided with the first electrode layer (3), organic luminous layer (4) and the second electrode lay (5), and the height of described pixel confining layers (2) is at least the twice of organic luminous layer (4) thickness.
5. organic light-emitting display device according to claim 4, it is characterized in that, the thickness of described pixel confining layers (2) is greater than the thickness sum of organic luminous layer (4) and the second electrode lay (5), and the top of described the second electrode lay (5) is formed with light transmitting electro-conductive polymeric layer (8).
6. organic light-emitting display device according to claim 5, it is characterized in that, also comprise encapsulating film (9), described encapsulating film (9) and described substrate (1) form closed area, and described pixel confining layers (2), pixel cell and light transmitting electro-conductive polymeric layer (8) are positioned at described closed area.
7. organic light-emitting display device according to any one of claim 1-3, it is characterized in that, described organic light-emitting display device is end emitting OLED-device, in continuous grids structure, superposition is provided with the first electrode layer (3) and organic luminous layer (4), the top of described pixel confining layers (2) and organic luminous layer (4) is formed with the second electrode lay (5), described first electrode layer (3), organic luminous layer (4) and the second electrode lay (5) form described pixel cell, the thickness sum of described organic luminous layer (4) and the second electrode lay (5) is greater than the height of described pixel confining layers (2).
8. organic light-emitting display device according to any one of claim 1-3, is characterized in that, described pixel confining layers (2) is organic photoresist layer.
9. a preparation method for organic light-emitting display device, is characterized in that, comprises the steps:
S11, make conductive layer and graphically form some first electrode layers (3) substrate (1) is upper, apply organic photoresist layer at the first electrode layer (3), and form pixel confining layers (2) through exposure imaging and run through the isolation channel (7) of described pixel confining layers;
The mode of S12, employing evaporation deposits organic luminous layer (4) and the second electrode lay (5) successively, the gross thickness of described organic luminous layer (4) is less than the thickness of pixel confining layers (2), and described organic luminous layer and the second electrode lay thickness sum are greater than the thickness of pixel confining layers (2).
10. a preparation method for organic light-emitting display device, is characterized in that, comprises the steps:
S21, make conductive layer and graphically form some first electrode layers (3) substrate (1) is upper, apply organic photoresist layer at the first electrode layer (3), and form pixel confining layers (2) through exposure imaging and run through the isolation channel (7) of described pixel confining layers;
The mode of S22, employing evaporation deposits organic luminous layer (4) and the second electrode lay (5) successively, described organic luminous layer (4) and the second electrode lay (5) thickness sum are less than the thickness of pixel confining layers (2), and the height of described pixel confining layers (2) is at least the twice of organic luminous layer (4) thickness;
S23, the top of described the second electrode lay (5) adopt atomization film forming or low temperature rapid evaporation mode deposit light transmitting electro-conductive polymeric layer (8), the thickness of described light transmitting electro-conductive polymeric layer (8) is greater than 2um.
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