CN108074951A - A kind of organic luminous panel - Google Patents
A kind of organic luminous panel Download PDFInfo
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- CN108074951A CN108074951A CN201610998975.7A CN201610998975A CN108074951A CN 108074951 A CN108074951 A CN 108074951A CN 201610998975 A CN201610998975 A CN 201610998975A CN 108074951 A CN108074951 A CN 108074951A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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Abstract
The present invention provides a kind of organic luminous panel, including：TFT substrate；Pixel defining layer is formed at the one side of TFT substrate；A plurality of isolation channel is formed at the one side that pixel defining layer deviates from TFT substrate；And anode layer, between pixel defining layer, anode layer includes multiple anodes；Isolation channel is mutually formed continuously multiple closed figures, and each closed figure surrounds an at least anode.The present invention also provides a kind of manufactures of organic luminous panel, comprise the following steps：One TFT substrate is provided；Pixel defining layer is formed in the one side of TFT substrate；In pixel defining layer a plurality of isolation channel is formed away from the one side of TFT substrate；Multiple anodes are formed between pixel defining layer, multiple anodes form anode layer；Isolation channel is mutually formed continuously multiple closed figures, and each closed figure surrounds an at least anode.Isolation channel in the pixel definition portion of organic luminous panel of the present invention makes the continuous hole injection layer partition between the anode of different pixels, avoids leaking electricity, prevents the appearance of low grayscale colour cast.
Description
Technical field
The present invention relates to display technology fields, and in particular to a kind of organic luminous panel.
Background technology
It is many excellent that organic electroluminescent (OLED) device has that low in energy consumption, light, brightness is high, the visual field is wide and reaction is fast etc.
Point, and can realize Flexible Displays, it has been widely used in the intelligent terminals such as smart mobile phone, tablet computer, is generally acknowledged
The mainstream technology of next-generation flat-panel monitor.
OLED device will realize colored display, have to provide simultaneously on the same location of pixels of display a variety of
Color (being typically tri- kinds of red R, green G, indigo plant B primary colors at present) is combined, and is also such in LCD or OLED display.
The hole injection layer (HIL1) of OLED display panel is deposited using shared metal mask (CMM mask) at present
, that is to say, that HIL1 is continuous continual between R, G, B.This just brings a problem, under low grayscale, is deposited between R, G, B
Pressure is being overstated, when this overstates that pressure reaches certain value (VB-VR during in 8Gray>0.8V), just have electric current and pass through HIL1 " altering " to R from B
(i.e.：There are transverse conductions for hole injection layer), leakage current is easily formed, which results in the appearance of low grayscale colour cast.
The content of the invention
For problems of the prior art, it is an object of the invention to provide a kind of organic luminous panel and its manufactures
Mode, this layer is discontinuous in HIL1 for corresponding anode between realizing R, G, B pixel, so as to avoid leaking electricity, prevents low grayscale colour cast
Appearance.
In order to achieve the above objectives, the present invention provides a kind of organic luminous panel, which is characterized in that including：One TFT substrate；
One pixel defining layer, is formed at the one side of the TFT substrate, the pixel defining layer limited by pixel definition portion to be formed it is multiple
Pixel region；One anode layer, including the multiple anodes being located in the multiple pixel region；And a plurality of isolation channel, it is formed at
The pixel defining layer deviates from the one side of the TFT substrate, and the isolation channel is mutually formed continuously multiple closed figures, Mei Gesuo
Closed figure is stated around at least one anode.
Preferably, further include：One first hole injection layer, is formed at the anode layer and the pixel defining layer deviates from institute
The one side of TFT substrate is stated, part first hole injection layer for being projected on the closed figure scope sinks into the isolation channel
In, separate with first hole injection layer of other parts.
Preferably, the closed figure is arranged in arrays.
Preferably, the closed figure collectively forms lattice.
Preferably, every isolation channel is shared by two closed figures.
Preferably, organic luminous layer is further included, is formed at first hole injection layer deviates from the TFT substrate one
Side；The organic luminous layer includes at least red luminous organic material area, green luminous organic material area and the organic hair of blueness
Luminescent material area.
Preferably, the anode corresponding to a blue organic luminous material area is individually by a closed figure bag
It encloses, corresponding to the anode and a green luminous organic material area corresponding to a red luminous organic material area
The anode is surrounded jointly by a closed figure.
Preferably, the red luminous organic material area, green luminous organic material area and blue organic luminous material
Each the corresponding anode is surrounded respectively by a closed figure in area.
Preferably, further include：One hole transmission layer, be formed at the organic luminous layer and first hole injection layer it
Between；One electron transfer layer is formed at the one side that the organic luminous layer deviates from the TFT substrate；And a cathode layer, it is formed at
The electron transfer layer deviates from the one side of the TFT substrate.
Preferably, one second hole injection layer is further included, is formed at first hole injection layer and the hole transport
Between layer.
Preferably, the isolation channel is non-through slot.
Preferably, the depth of the isolation channel is equal to 2 times of the thickness of first hole injection layer.
Preferably, the depth bounds of isolation channel isExtremelyThe thickness range of first hole injection layer isExtremely
Preferably, an isolation channel between the two neighboring anode is the distance between to two anodes
It is equal.
Preferably, an isolation channel between the two neighboring anode is the distance between to two anodes
Difference is less than or equal to 10 μm.
As another aspect of the present invention, a kind of manufacturing method of organic luminous panel, which is characterized in that including following
Step：One TFT substrate is provided；Pixel defining layer is formed in the one side of the TFT substrate, the pixel defining layer is determined by pixel
Adopted portion limits to form multiple pixel regions；Anode layer is formed, the anode layer includes being located at more in the multiple pixel region
A anode；And a plurality of isolation channel is formed away from the one side of the TFT substrate in the pixel defining layer, the isolation channel is mutual
Multiple closed figures are formed continuously, each closed figure surrounds at least one anode.
Preferably, it is further comprising the steps of：The anode layer and the pixel defining layer deviate from the one side of the TFT substrate
The first hole injection layer is formed, first hole injection layer sinks into institute positioned at the part of the closed figure scope of the isolation channel
It states in isolation channel, separates with first hole injection layer of other parts.
Preferably, occur the step of the pixel defining layer forms a plurality of isolation channel away from the one side of the TFT substrate
After the step of formation pixel defining layer, before described the step of forming anode layer.
Preferably, occur the step of the pixel defining layer forms a plurality of isolation channel away from the one side of the TFT substrate
It is described formation anode layer the step of after, formed first hole injection layer the step of before.
Preferably, the isolation channel is non-through slot, and the depth of the isolation channel is equal to first hole injection layer
2 times of thickness.
Compared with prior art, the present invention at least has the advantages that：
The present invention forms a plurality of isolation channel in pixel defining layer away from the one side of TFT substrate, and isolation channel is mutually formed continuously
Multiple closed figures, each closed figure surround an at least anode so that hole injection layer is discontinuous at isolation channel, avoids leaking
Electric current prevents the appearance of low grayscale colour cast.
Description of the drawings
Fig. 1 is the sectional view of pixel defining layer of the embodiment of the present invention and anode layer portion；
Fig. 2 is the cross section structure figure of the organic luminous panel of the embodiment of the present invention；
Fig. 3 is the top view of the organic luminous panel section A-A of the embodiment of the present invention；
Fig. 4 is the top view of the organic luminous panel section A-A of another embodiment of the present invention；
Fig. 5 is the manufacturing method of the organic luminous panel of the embodiment of the present invention；
Fig. 6 is the manufacturing method of the organic luminous panel of another embodiment of the present invention.
Wherein, the reference numerals are as follows：
1 TFT substrate
2 pixel defining layers
21 pixel definition portions
31st, 32,33 anode
4th, 4a, 4b isolation channel
41 closed figures
5 organic luminous layers
6 first hole injection layers
7 hole transmission layers
8 electron transfer layers
9 cathode layers
10 second hole injection layers
Specific embodiment
Example embodiment is described more fully with reference to the drawings.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that the present invention more
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Identical attached drawing in figure
Mark represents same or similar structure, thus will omit repetition thereof.
The word of expression position and direction described in present invention, is the explanation carried out by taking attached drawing as an example, but root
According to needing to make a change, make change and be all contained in the scope of the present invention.
Fig. 1 is refer to, it illustrates pixel defining layer of the embodiment of the present invention and the cross section structures of anode layer portion.
As shown in Figure 1, the organic luminous panel of the embodiment of the present invention includes：TFT substrate 1, pixel defining layer 2, anode layer 3
And a plurality of isolation channel 4.Pixel defining layer 2 is formed at the one side of TFT substrate 1, and it is more to pass through the restriction formation of pixel definition portion 21
A pixel region.Anode layer 3 includes the multiple anodes 31, anode 32, the anode 33 that are formed in multiple pixel regions.Anode 31,
Anode 32, anode 33 each correspond to the luminous organic material of different colours, and anode 31 corresponds to blue organic luminous material, anode 32
Corresponding red luminous organic material, anode 33 correspond to green luminous organic material.A plurality of isolation channel 4 is formed at pixel defining layer 2
Away from the one side of TFT substrate 1, isolation channel 4 is mutually formed continuously multiple closed figures 41, and each closed figure 41 is at least about one
Anode 31 or anode 32 or anode 33.
Fig. 2 and Fig. 3 are refer to, cross section structure and section it illustrates the organic luminous panel of another embodiment of the present invention
The plan structure of A-A.
As shown in Figures 2 and 3, the organic luminous panel of the present embodiment uses top lighting means, including：TFT substrate 1, as
Plain definition layer 2, anode layer 3, a plurality of isolation channel 4, the first hole injection layer 6, hole transmission layer 7, organic luminous layer 5, electronics pass
Defeated layer 8 and cathode layer 9.
Pixel defining layer 2 is formed at the one side of TFT substrate 1, and passes through the restriction of pixel definition portion 21 and form multiple pixel regions
Domain.Anode layer 3 includes the multiple anodes 31, anode 32, the anode 33 that are formed in multiple pixel regions.Anode 31, anode 32, sun
Pole 33 each corresponds to the luminous organic material of different colours.A plurality of isolation channel 4 is formed at pixel defining layer 2 away from TFT substrate 1
One side, isolation channel 4 are mutually formed continuously multiple closed figures 41, and each closed figure 41 is independently around an anode 31 or anode 32
Or anode 33.First hole injection layer 6 is formed at anode layer 3 and pixel defining layer 2 deviates from the one side of TFT substrate 1, in anode layer
It is continuous between 3 each anode 31, anode 32, anode 33.Referring to Fig. 3, due to forming a plurality of isolation channel 4 in pixel defining layer 2, first
The part that hole injection layer 6 is projected on 41 scope of closed figure that a plurality of isolation channel 4 is mutually formed continuously sinks into isolation channel 4,
And with 4 corresponding position of isolation channel formed and 4 corresponding lattice of isolation channel.In order to easily manufactured, raising production efficiency, this
Closed figure 41 is the rectangle of rule in embodiment, but those skilled in the art should know, the present invention not with
This is limited, and closed figure 41 can also can form other close-shaped figures.Generally, the depth bounds of isolation channel 4 isExtremelyIt is easily filled up by other organic layers, does not influence cathode continuity and electric conductivity.First hole injection layer 6
Thickness range isExtremelyIn the present embodiment, the depth of isolation channel 4 is twice of 6 thickness of the first hole injection layer,
The first hole injection layer of part 6 being located in isolation channel 4 can be made to be fully sunk in isolation channel 4, so that the part first
Hole injection layer 6 and the first partition completely of hole injection layer 6 of other parts, preferably avoid generating leakage current.The present embodiment
In, isolation channel 4 is non-through slot, the one side that pixel defining layer 2 deviates from TFT substrate 1 is formed at, in order to reduce technology difficulty and keep away
Exempt to generate leakage current, isolation channel 4 is tried not close to blue organic luminous material, red luminous organic material, the organic hair of green
Anode 31, anode 32, anode 33 corresponding to luminescent material.Referring to Fig. 3, pass through isolation channel between adjacent anode 31 and anode 32
4a, by isolation channel 4b between adjacent anode 32 and anode 33, in order to preferably separate the first hole injection layer 6 so as to avoiding
Leakage current is generated, isolation channel 4a is equal to the distance between anode 31 and anode 32 in the present embodiment, isolation channel 4b to anode 32
The distance between anode 33 is equal.In order to reduce the difficulty of preparation process, production efficiency is improved, in the embodiment of a variation
In, isolation channel 4a is less than or equal to 10 μm to the distance between anode 31 and anode 32 difference, isolation channel 4b to anode 32 and anode
The distance between 33 differences are less than or equal to 10 μm.Those skilled in the art should know that the present invention is not limited thereto,
As long as isolation channel 4 is formed in the flat sections (non-circular arc) of 21 upper table of pixel definition portion, corresponding not close to luminous organic material
Anode 31, anode 32, anode 33.In order to preferably control 4 etching edge angle of isolation channel and etching precision, isolation channel 4
Depth is as far as possible big, but can cause the stress concentration of subsequent thin film and device lifetime too short problem, the present embodiment interval deeply very much
It is from 4 depth of slotExtremelyOrganic luminous layer 5 is formed at the one side that anode layer 3 deviates from TFT substrate 1, organic hair
Photosphere 5 includes at least blue organic luminous material, red luminous organic material and green luminous organic material, organic with blueness
Corresponding luminescent material is anode 31, and corresponding with red luminous organic material is anode 32, with green luminous organic material pair
It is anode 33 to answer.
In the embodiment of another variation, organic luminous panel of the invention further includes the second hole injection layer 10, and second
Hole injection layer 10 is formed between the first hole injection layer 6 and hole transmission layer 7.Due to the first hole injection layer 6 and anode
Layer 3 is close to the leakage current overwhelming majority results from the first hole injection layer 6, and the second hole injection layer 10 with the first hole due to noting
Enter Presence of an interface between layer 6, leakage current can seldom enter the second hole injection layer 10.
Fig. 4 is refer to, it illustrates the plan structures of the organic luminous panel section A-A of another embodiment of the present invention.
As shown in figure 4, in the embodiment of another variation, a plurality of isolation channel 4 of organic luminous panel of the invention is formed
Deviate from the one side of TFT substrate 1 in pixel defining layer 2, isolation channel 4 is mutually formed continuously multiple closed figures 41, each Closed Graph
Shape 41 surrounds anode 32 and anode 33 independently around an anode 31 or simultaneously.With Fig. 2 with embodiment shown in Fig. 3 different, this reality
It applies an Anodic 32 and anode 33 no longer each individually to be surrounded by a closed figure 41, but anode 32 and anode 33 are jointly by one
A closed figure 41 surrounds.Since the driving voltage that blue subpixels need is higher than the driving voltage or green of red sub-pixel needs
The driving voltage that sub-pixels need causes the corresponding anode 31 of luminous organic material, anode 32, the anode 33 of different subpixel
Between exist and overstate pressure, so as to easily generate leakage current on the first hole injection layer 6, therefore in order to avoid generation leakage current, and
The quantity of isolation channel 4 is formed needed for reducing, reduces technology difficulty, simplifies technique, it is only necessary to be corresponded in blue organic luminous material
Anode 31 around pixel definition portion 21 on form a plurality of isolation channel 4, a plurality of isolation channel 4 forms closed figure 41 by anode 31
Around wherein so that the first hole injection layer of part 6 for being projected on isolation channel 4 sinks into isolation channel 4, so as to and other parts
First hole injection layer 6 generates partition, just equally can be to avoid generation leakage current.The other technical characteristics and Fig. 2 of the present embodiment
Identical with embodiment shown in Fig. 3, details are not described herein again.
Fig. 5 is refer to, it illustrates the manufacturing methods of the organic luminous panel of the embodiment of the present invention.
The embodiment of the present invention also provides a kind of manufacturing method of organic luminous panel, as shown in figure 5, comprising the following steps：
Step S1：One TFT substrate 1 is provided.
Step S2：Pixel defining layer 2 is formed in the one side of TFT substrate 1.The pixel defining layer 2 passes through multiple pixel definitions
Portion 21 limits and forms multiple pixel regions.
Step S3：Anode layer 3 is formed in the one side of TFT substrate 1, which includes being located in multiple pixel regions
Multiple anodes 31, anode 32, anode 33.
Step S4：A plurality of isolation channel 4 is formed away from the one side of TFT substrate 1 in pixel defining layer 2,4 phase of isolation channel interconnection
Continuous to form multiple closed figures 41, each closed figure 41 is around at least an anode 31, anode 32, anode 33.
The etching depth of isolation channel 4 is only in the present embodimentExtremelyFor etching the required precision of processing procedure very
Height can take two ways, first, very thin photoresist can be applied, the very short etch period of use；In addition there is a kind of side
Case, be exactly using halftone litho machines (i.e.：Halftoning litho machine), 50% is exposed in the position of isolation channel 4, is not exclusively eaten
Thoroughly, develop again afterwards, so as to achieve the purpose that control etching depth very shallow.
More difficultly this layer of photoresist requirement applied in pixel defining layer 2 is also very thin.Existing photoresist
Coating method be mostly slid coater (i.e.：Slit coating), precision is 1 μm, therefore in order to prepare thicknessThe light of left and right
Photoresist will use new Inkjet mode gluings.(i.e.：Ink-jet gluing, different small ink droplets be combined with each other, can so be formed very thin
Coating.)
Step S5：In anode layer 3 and pixel defining layer 2 the first hole injection layer 6, position are formed away from the one side of TFT substrate 1
Sink into the first hole injection layer of part 6 of 41 scope of closed figure of isolation channel 4 in isolation channel 4, first with other parts
Hole injection layer 6 separates.
In order to enable the first hole injection layer of part 6 positioned at 41 scope of closed figure of isolation channel 4 is absorbed in closed figure
In 41, work well so that the first hole injection layer 6 separates at the closed figure 41 of isolation channel 4, made in the present embodiment
The isolation channel 4 made is non-through slot, and the depth of the isolation channel 4 is equal to 2 times of 6 thickness of the first hole injection layer.
As shown in fig. 6, the manufacturing method of the organic luminous panel it illustrates another embodiment of the present invention.
The manufacturing method of organic luminous panel provided in this embodiment is as shown in fig. 6, comprise the following steps：
Step S1：One TFT substrate 1 is provided.
Step S2：Pixel defining layer 2 is formed in the one side of TFT substrate 1.The pixel defining layer 2 passes through multiple pixel definitions
Portion 21 limits and forms multiple pixel regions.
Step S3：A plurality of isolation channel 4 is formed away from the one side of TFT substrate 1 in pixel defining layer 2,4 phase of isolation channel interconnection
It is continuous to form multiple closed figures 41.
The etching depth of isolation channel 4 is only in the present embodimentExtremelyFor etching the required precision of processing procedure very
Height can take two ways, first, very thin photoresist can be applied, the very short etch period of use；In addition there is a kind of side
Case, be exactly using halftone litho machines (i.e.：Halftoning litho machine, halftone litho machines are new exposure machines, single exposure
Different zones intensity is adjustable.), 50% is exposed in the position of isolation channel 4, not exclusively has thorough grasp, develops again afterwards, so as to reach control
The very shallow purpose of etching depth.
More difficultly this layer of photoresist requirement applied in pixel defining layer 2 is also very thin.Existing photoresist
Coating method be mostly slid coater (i.e.：Slit coating), precision is 1 μm, therefore in order to prepare thicknessThe light of left and right
Photoresist will use new Inkjet mode gluings.(i.e.：Ink-jet gluing, different small ink droplets be combined with each other, can so be formed very thin
Coating.)
Step S4：Anode layer 3 is formed in the one side of TFT substrate 1, which includes being located in multiple pixel regions
Multiple anodes 31, anode 32, anode 33, foregoing each closed figure 41 is around at least an anode 31, anode 32, anode 33.
Step S5：Anode layer 3 and pixel defining layer 2 form the first hole injection layer 6 away from the one side of TFT substrate 1, are located at
The first hole injection layer of part 6 of 41 scope of closed figure of isolation channel 4 sinks into isolation channel 4, empty with the first of other parts
Cave implanted layer 6 separates.
In order to enable the first hole injection layer of part 6 positioned at 41 scope of closed figure of isolation channel 4 is absorbed in closed figure
In 41, work well so that the first hole injection layer 6 separates at the closed figure 41 of isolation channel 4, made in the present embodiment
The isolation channel 4 made is non-through slot, and the depth of the isolation channel 4 is equal to 2 times of 6 thickness of the first hole injection layer.
Although the embodiment of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, those of ordinary skill in the art are not departing from the principle of the present invention and objective
In the case of above-described embodiment can be changed within the scope of the invention, change, replace and modification.
Claims (20)
1. a kind of organic luminous panel, which is characterized in that including：
One TFT substrate (1)；
One pixel defining layer (2), is formed at the one side of the TFT substrate (1), and the pixel defining layer (2) passes through pixel definition
Portion (21) limits and forms multiple pixel regions；
One anode layer (3), including the multiple anodes (31,32,33) being formed in multiple pixel regions；And
A plurality of isolation channel (4) is formed at the one side that the pixel defining layer (2) deviates from the TFT substrate (1), the isolation channel
(4) multiple closed figures (41) are mutually formed continuously, each closed figure (41) around at least one anode (31,32,
33)。
2. organic luminous panel according to claim 1, which is characterized in that further include：
One first hole injection layer (6), is formed at the anode layer (3) and the pixel defining layer (2) deviates from the TFT substrate
(1) one side, part first hole injection layer (6) for being projected on the closed figure (41) scope sink into the isolation channel
(4) in, separate with first hole injection layer (6) of other parts.
3. organic luminous panel according to claim 2, which is characterized in that the closed figure (41) is arranged in arrays.
4. organic luminous panel according to claim 2, which is characterized in that the closed figure (41) collectively forms grid
Pattern.
5. organic luminous panel according to claim 4, which is characterized in that every isolation channel (4) is described in two
Closed figure (41) shares.
6. organic luminous panel according to claim 2, which is characterized in that further include organic luminous layer (5), be formed at institute
State the one side that the first hole injection layer (6) deviates from the TFT substrate (1)；
The organic luminous layer (5), which includes at least blue organic luminous material area, red luminous organic material area and green, to be had
Machine luminescent material area.
7. organic luminous panel according to claim 6 a, which is characterized in that institute of blue organic luminous material area is right
The anode (31) answered individually is surrounded by a closed figure (41), corresponding to a red luminous organic material area
The anode (33) corresponding to the anode (32) and a green luminous organic material area is jointly by a Closed Graph
Shape (41) is surrounded.
8. organic luminous panel according to claim 6, which is characterized in that the blue organic luminous material area, red
Luminous organic material area and green luminous organic material area each corresponding to the anode (31,32,33) respectively by an institute
State closed figure (41) encirclement.
9. organic luminous panel according to claim 6, which is characterized in that further include：
One hole transmission layer (7) is formed between the organic luminous layer (5) and first hole injection layer (6)；
One electron transfer layer (8) is formed at the one side that the organic luminous layer (5) deviates from the TFT substrate (1)；And
One cathode layer (9) is formed at the one side that the electron transfer layer (8) deviates from the TFT substrate (1).
10. organic luminous panel according to claim 9, which is characterized in that further include：One second hole injection layer
(10), it is formed between first hole injection layer (6) and the hole transmission layer (7).
11. organic luminous panel as claimed in any of claims 1 to 10, which is characterized in that the isolation channel (4)
For non-through slot.
12. organic luminous panel according to claim 11, which is characterized in that the depth of the isolation channel (4) is equal to institute
State the thickness of the first hole injection layer (6) 2 times.
13. organic luminous panel according to claim 11, which is characterized in that the depth bounds of the isolation channel (4) isExtremelyThe thickness range of first hole injection layer (6) isExtremely
14. organic luminous panel according to claim 11, which is characterized in that the two neighboring anode (31,32,33)
Between an isolation channel (4) it is equal to the distance between this two anodes (31,32,33).
15. organic luminous panel according to claim 11, which is characterized in that the two neighboring anode (31,32,33)
Between an isolation channel (4) be less than or equal to 10 μm to the distance between this two described anodes (31,32,33) difference.
16. a kind of manufacturing method of organic luminous panel, which is characterized in that comprise the following steps：
One TFT substrate (1) is provided；
Pixel defining layer (2) is formed in the one side of the TFT substrate (1), the pixel defining layer (2) passes through pixel definition portion
(21) limit and form multiple pixel regions；
Formed anode layer (3), the anode layer (3) include be located at the multiple pixel region in multiple anodes (31,32,
33)；And
In the pixel defining layer (2) a plurality of isolation channel (4), the isolation channel are formed away from the one side of the TFT substrate (1)
(4) multiple closed figures (41) are mutually formed continuously, each closed figure (41) around at least one anode (31,32,
33)。
17. the manufacturing method of organic luminous panel according to claim 16, which is characterized in that further comprising the steps of：
The anode layer (3) and the pixel defining layer (2) form the first hole injection layer away from the one side of the TFT substrate (1)
(6), be projected on closed figure (41) scope of the isolation channel (4) part first hole injection layer (6) sink into it is described
In isolation channel (4), separate with first hole injection layer (6) of other parts.
18. the manufacturing method of organic luminous panel according to claim 17, which is characterized in that in the pixel defining layer
(2) the step of forming a plurality of isolation channel (4) away from the one side of the TFT substrate (1) is happened at the formation pixel defining layer (2)
The step of after, it is described formation anode layer (3) the step of before.
19. the manufacturing method of organic luminous panel according to claim 17, which is characterized in that in the pixel defining layer
(2) the step of forming a plurality of isolation channel (4) away from the one side of the TFT substrate (1) is happened at the step of the formation anode layer (3)
After rapid, formed before the step of the first hole injection layer (6).
20. the manufacturing method of organic luminous panel according to claim 17, which is characterized in that the isolation channel (4) is
Non-through slot, the depth of the isolation channel (4) are equal to 2 times of the thickness of first hole injection layer (6).
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807494A (en) * | 2018-07-06 | 2018-11-13 | 云谷（固安）科技有限公司 | Display base plate and preparation method thereof, display panel and display device |
| CN109346505A (en) * | 2018-10-11 | 2019-02-15 | 京东方科技集团股份有限公司 | A kind of organic light emitting display panel, preparation method and display device |
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