CN105470315A - Optoelectronic packages having through-channels for routing and vacuum - Google Patents

Optoelectronic packages having through-channels for routing and vacuum Download PDF

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Publication number
CN105470315A
CN105470315A CN201510617216.7A CN201510617216A CN105470315A CN 105470315 A CN105470315 A CN 105470315A CN 201510617216 A CN201510617216 A CN 201510617216A CN 105470315 A CN105470315 A CN 105470315A
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China
Prior art keywords
die
electric traces
penetrating via
swaging die
mould
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Granted
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CN201510617216.7A
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Chinese (zh)
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CN105470315B (en
Inventor
R·帕萨
W·弗伦奇
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Texas Instruments Inc
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Texas Instruments Inc
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
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    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Packages (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)

Abstract

The present invention relates to optoelectronic packages having through-channels for routing and vacuum. A stacked optoelectronic packaged device (300) includes a plurality of stacked components within a package material having a package body providing side walls and a bottom wall for the package, and a lid (174) which seals a top of the package. The stacked components include a first cavity die (252) having a top surface and a bottom surface including at least one through-channel formed in the bottom surface. A bottom die (251) has a top surface including at least one electrical trace (354, 357) and a light source die (180) thereon. At least one of the through-channels of the first cavity die are aligned to the electrical trace, and the first cavity die is bonded to the bottom die with the electrical trace being within the through-channel and not contacting the first cavity die to provide a vacuum sealing structure. A photodetector (PD) is optically coupled to receive the light originating from the light source.

Description

For connecting up and the photoelectric packaging part with penetrating via of vacuum
The cross reference of related application
This application claims the Provisional Application Serial NO.62/055 submitted on September 26th, 2014,827, be entitled as the rights and interests of " micro-structure atomic clock (MFAC) and magnetometer (MFAM): (HVM) magnetic characterization (Microfabricatedatomicclocks (MFAC) & magnetometers (MFAM): highvolumemanufactural (HVM) magneticcharacterization) that high power capacity manufactures ", its whole disclosure is incorporated to herein by reference.
Technical field
Disclosed embodiment relates to implements the stacked photoelectric packaging part that optical pumping send transducer or reference, such as MFAC and MFAM.
Background technology
Various optoelectronic device is sealed in unit, its photoelectric detector operated under being included in vacuum (PD) and at least one light source.Traditional MFAC and MFAM packaging part is included in the structure of the stacked vertical inside encapsulating material, described structure comprises the bed die as supporting member, described bed die has electric traces and at least one light source mounted thereto (such as, mode of laser, such as vertical cavity surface emitting laser (VCSEL)); The first swaging die (firstcavitydie) on described bed die, it provides cavity above light source; And the optical mode on described first swaging die.Described electric traces on described bed die connects peripheral driver, described peripheral driver drives described light source and comprises the trace of resistance heater, such as to provide heat energy with the temperature of heated light sources mould to more than 50 DEG C, such as, the temperature between 60 DEG C and 80 DEG C.Second swaging die is on sealed mould, and described sealed mould is on described optical mode, and photoelectric detector (PD) mould to be coupled to receive in the position of the light being derived from described light source.This packaging part is vacuum sealed package part.
Summary of the invention
Content of the present invention is provided to introduce concepts more of the present disclosure in simplified form, and it will, below in embodiment, comprise in the accompanying drawing provided and further describing.Content of the present invention is not intended to the scope limiting theme required for protection.
Disclosed embodiment recognizes that therefore described first swaging die partly also contacts the electric traces (or wiring route) in the top side face of this bed die at the top of the bed die of stacked optoelectronic package equipment (optoelectronic package equipment), such as peripheral driver being connected to the electric traces of the light source on bed die, because electric traces produces the region of local crowning below the part of described first swaging die, so the stacked inclination of optics can be caused.The stacked inclination of optics is considered to disturb with required vacuum in the cavity region above light source, and this can reduce the performance of optoelectronic package equipment.
It is stacked that disclosed embodiment comprises the part with mould and mould vacuum seal structure, and the first swaging die and bed die are drawn together in this part layer stacked package, and wherein bed die is included in the electric traces of its end face.First swaging die comprises at least one penetrating via be formed in its bottom surface, at least one in penetrating via is aimed at the described electric traces on bed die, make when described first swaging die is engaged to described bed die, electric traces (one or more) is contained in wherein by the size of penetrating via, makes electric traces (one or more) not contact the first swaging die.This feature eliminates the inclination of the first swaging die, achieve the stacked of improvement, thus provide more complete vacuum-packed encapsulation architecture, such as improving the performance of optoelectronic package equipment comprising micro-structure atomic clock (MFAC), micro-structure magnetometer (MFAM) and motion sensor device.
Accompanying drawing explanation
Referring now to accompanying drawing, wherein accompanying drawing is not necessarily drawn in proportion, wherein:
Fig. 1 illustrates according to example embodiment the flow chart forming the step in the exemplary method of optoelectronic package equipment at use first swaging die, and the first swaging die has to be aimed at the electric traces (one or more) on the end face of bed die and to be dimensioned to not contact the penetrating via (one or more) of electric traces (one or more).
Fig. 2 is the diagram of the example swaging die according to example embodiment, and this exemplary type cavity mould has the penetrating via (one or more) not causing tilting for providing the wiring of electronic circuit on the top of bed die, realizing having the etching of the vacuum encapsulation structure of good mechanical stability.
Fig. 3 is the example photoelectricity sealed in unit comprising disclosed first swaging die according to example embodiment, the promising electric traces (one or more) on the end face of bed die of this first type cavity mould provides the penetrating via of microchannel, and wherein penetrating via is dimensioned to not contact electric traces (one or more).
Embodiment
Example embodiment has been described with reference to the drawings, and wherein identical drawing reference numeral is used to indicate identical or equivalent element.The order of illustrative action or event should not be considered to restrictive, because some actions or event can occur in sequence with different and/or occur with other actions or event simultaneously.In addition, some illustrative actions or event can not be needed to realize the method according to the disclosure.
Fig. 1 is the flow chart illustrated for the formation of the step in the exemplary method 120 of the optoelectronic package equipment by the stacked realization of part according to embodiment, the first swaging die is drawn together in this part layer stacked package, and the first swaging die has to be aimed at the electric traces (one or more) on the end face of bed die on its bottom surface and is dimensioned the penetrating via (one or more) not contacting electric traces (one or more).Therefore, the stacked precise superposing realizing the first swaging die and bed die of disclosed part.
Step 121 comprises by bottom mould postioning on the diapire of packaging part comprising encapsulating material (such as, plastics or pottery), and described packaging part has the encapsulating housing providing sidewall and diapire.Picking up-placing of standard can be used to this location and other moulds described herein location.Bed die has the end face that comprises at least one electric traces and thereon for radiative light source die.Light source die can comprise vertical cavity surface emitting laser (VCSEL).Electric traces generally comprises for coupled external driver with driving light source and the electric traces of trace being configured to realize resistance heater.
Step 122 comprises and is positioned on the end face of bed die by first swaging die with bottom surface, described first swaging die comprises at least one penetrating via be formed in bottom surface, and penetrating via (one or more) is aimed at electric traces (one or more).As specific example, use the wet etching (such as Tetramethylammonium hydroxide (TMAH) or potassium hydroxide (KOH)) based on hydroxide, penetrating via can be formed on multiple first swaging dies on silicon chip simultaneously.Can to perform the wet etching of silicon chip from ways to restrain, be meant to for specific aperture size, this is etched in desired depth place or neighbouring stopping self.Such as, when narrow mask (such as, photoresist) opening is when being used to make the surface of silicon chip to expose, and wet etching can carry out with the angle (all 54.74 ° according to appointment) be applicable to, and makes this wet etching can in its etching completely by self termination before the thickness of silicon chip.Self termination etching causes the penetrating via in surface with Breadth Maximum, and wherein this penetrating via linearly reduces until width is zero along its height-width.
Dry etching (such as, reactive ion etching (RIE)) or plasma etching also can be used to form penetrating via, and this penetrating via generally will have closely constant width along its height.The height of penetrating via can than large at least 2 μm of the thickness of electric traces, and can than large at least 20 μm of the width of electric traces throughout the minimum widith of the penetrating via of the thickness of electric traces.In another embodiment, the first swaging die can comprise glass.
Electric traces can comprise more than first electric traces, and penetrating via can comprise more than second penetrating via, and more than first wherein all electric traces is jointly in more than second penetrating via.One or more electric traces can in each penetrating via.
Step 123 comprises the first swaging die is attached to bed die, and wherein electric traces is in penetrating via, and does not contact the first swaging die to provide inner vacuum hermetically-sealed construction, and this realizes the precise superposing of the first swaging die and bed die.Therefore, disclosed embodiment avoids the inclination in optics is stacked caused by the optics trace of (being also therefore contact the first swaging die on the top of the first swaging die traditionally) on the end face of bed die, therefore, produce the precise superposing that can realize the first swaging die and bed die, the part of complete vacuum seal optical package framework with good mechanical stability is stacked.In one embodiment, epoxy resin (or other adhesive) is used to engage.
Step 124 comprises and is positioned at and will is coupled to receive in the position of the described light (such as in the sight line of light being derived from light source) being derived from described light source die by photoelectric detector (PD) mould.Such as, PD mould can be installed on the base part of enclosed inside part, enclosed inside part in the inner side of packaging part, wherein enclosed inside part have relative with this base part, towards the open top of the diapire of packaging part.
Step 125 is included in packaging part and produces vacuum.Step 126 comprises by lidstock on the top of the sidewall of packaging part, for sealed package under vacuo.The method can comprise further and being positioned on the first swaging die by optical mode.
Fig. 2 is the cross-sectional view according to the Examples section of example embodiment stacked 200, this Examples section stacked 200 comprises the first swaging die 252 of the end face joining bed die 251 to, and bed die 251 has penetrating via 256a and 256b of etching for providing microchannel for the wiring electric traces 261a on bed die 251,261b, 261c and 261d.Not shown bond pad on the end of electric traces 261a, 261b, 261c and 261d in fig. 2.
Because penetrating via 256a and 256b has enough sizes, electric traces 261a, 261b, 261c and 261d are encased in the first swaging die 252 completely and do not contact the first swaging die 252, part stacked 200 avoids the first traditional swaging die 252 caused because one or more electric traces contacts with its bottom side to tilt.Because avoiding inclination by part layer folded 200, so part stacked 200 can realize the precise superposing of the first swaging die 252 and bed die 251 and have the vacuum encapsulation structure of optoelectronic package equipment of good mechanical stability.
Fig. 3 is the diagram comprising the example photoelectricity sealed in unit 300 of disclosed first swaging die 252 according to example embodiment, first swaging die 252 electric traces (one or more) had for being depicted as the electric traces 359 that bond pad 155 and 159 is associated and the electric traces 361 be associated with bond pad 156 and 158 on the end face of bed die 251 provides the penetrating via 256a of microchannel, wherein penetrating via 256a is by enough large sizing, thus does not contact electric traces.Part as shown in Figure 2 stacked 200, the wherein penetrating via 256a of the first swaging die 252, 256b has the electric traces that enough sizes make to illustrate and to load completely in (electric traces 359 and 361 loads completely) to first swaging die 252 of Fig. 3 and not contact this first swaging die 252, make the stacked precise superposing that can realize the first swaging die and bed die of part, and avoid because one or more electric traces contacts with its bottom side and cause the first swaging die 252 to tilt, the vacuum encapsulation structure of the optoelectronic package equipment 300 with good mechanical stability can be realized.Optoelectronic package equipment 300 is illustrated the enclosed inside part 350 be included in inside external package (OP) 170.Enclosed inside part 350 have relative with its base part, towards the open top of the diapire of packaging part.
PD mould 110 comprises the first contact, and the wiring comprised by comprising interior bonds lead-in wire 115 of the first contact is connected to the front contact 110a of the first external engagement pad (FEBP) 111.PD mould 110 also comprises the second contact, and the wiring comprised by comprising backside metal layer 102 of the second contact is connected to the back contact 110b of the second external engagement pad (SEBP) 112.
The enclosed inside part 350 illustrated comprises multilayer first dielectric substrate, and multilayer first dielectric substrate comprises the first dielectric level face 101 and the second dielectric level face 106 above the first dielectric level face 101.As known in the art, multilayer first dielectric substrate can be integration (single piece type) substrate, the first dielectric level face 101 is constructed together with any intermediate metal layer and without the need to any adhesive with the second dielectric level face 106.Such as, ceramic package has buildup layer, and it allows the horizontal and vertical connection of integrated metal to reach the outer surface of packaging part.
First dielectric level face 101 comprises top side, top side comprises the first mould attachment area, first mould attachment area has the first outer peripheral backside metal layer 102 extending to enclosed inside part 350 thereon, and FEBP111 and SEBP112 extends above a part for the bottom side in the first dielectric level face 101.Second dielectric level face 106 is above the first dielectric level face 101, wherein the first dielectric level face 101 adds frame to the mould attachment area comprising wire bond region, and wire bond region has the second outer peripheral second metal level 119 extending to enclosed inside part 350.
Front contact 110a can comprise the bond pad metal being connected to n+ region, and back contact 110b can comprise the bond pad metal being connected to p+ region.Back contact 110b can be the whole bottom side of PD mould 110.Front contact 110a is connected to the second metal level 119 by interior bonds lead-in wire 115.
PD mould 110 can comprise any applicable front side-illuminated PD comprising photodiode, phototransistor or charge coupled device (CCD), and it can be all existing PD mould.In one embodiment, PD mould 110 comprise there is the first conductivity (such as n+) the first active layer, there is second conductivity contrary with the first conductivity (such as, p+) the second active layer, and the intrinsic layer (to form PIN diode) that the first and second active layers are separated.
Enclosed inside part 350 is on the second installation base plate 351, and the second installation base plate 351 comprises the bond pad 352 and 353 be linked together by the metal trace shown in 357 and the bond pad 354 and 355 be linked together by the metal trace shown in 358.FEBP111 is connected to bond pad 353 by bonding wire 161a, and bond pad 352 is connected to upper wire bond region 177a by bonding wire 161b.SEBP112 is connected to bond pad 354 by bonding wire 162a, and bond pad 355 is connected to upper wire bond region 177b by bonding wire 162b.
Be depicted as bonding wire 161a, together with first bonding wire of bonding wire 161b, FEBP111 be connected to wire bond region 177a, wire bond region 177a connects the first terminal 191 of OP170; Together with second bonding wire 162a with 162b, SEBP112 is connected to wire bond region 177b, wire bond region 177b connects second terminal 192 of OP170; The bond pad 155 of the end in metal trace 359 is connected to external engagement pad 176a by the 3rd bonding wire 165, by metal trace 359 and the bonding wire between bond pad 159 and the first electrode 181, external engagement pad 176a is connected to the 3rd terminal 193 of OP170, and the 4th bonding wire 166 is connected to external engagement pad 176b from bond pad 158, by the bonding wire external engagement pad 176b of the bond pad 156 of the end from metal trace 361, second electrode 182 is connected to the 4th terminal 194 of OP170.Capping 174 tight seal OP170.
Optoelectronic package equipment 300 comprises the light source die 180 with electrode 181 and electrode 182 to allow by biased (such as, electric pump send) shown in the bonding wire 165 from lower bond welding disking area 176a (being connected to the 3rd terminal 193) and Fig. 3 of being provided by the bonding wire 166 from lower bond welding disking area 176b (being connected to the 4th terminal 194).In a specific embodiment, light source die 180 can comprise VCSEL.Printing opacity sealing on optical mode 321a or matrix (sealed mould) 321b are illustrated between the first swaging die 252 and the second swaging die 328.Sealed mould 321b can comprise the optical glass of the bottom sealing the upper chambers defined by the second swaging die 328, and the second swaging die 328 is sealed positive upper end by the second installation base plate 351.Second installation base plate 351 can comprise optical glass, such as borosilicate glass, such as, and BOROFLOAT33.
The advantage of disclosed embodiment comprises a kind of structure, inclination during this structure optics of avoiding the part contacting the first swaging die by the electric traces on bed die to cause is stacked, the precise superposing of the first swaging die and bed die can be realized, and producing complete vacuum sealed package framework, this complete vacuum sealed package framework can by producing via a large amount of low cost of manufacture and the technique of high-throughput.The application of disclosed embodiment generally comprises to be had light source (such as laser diode is together with all application of the built-in watch-dog PD operated under vacuo.A concrete example is magnetometer physical package part.Other examples comprise atomic clock and motion sensor.
Disclosed embodiment can be integrated in various assembling stream to form various different optoelectronic device and Related product.What the disclosure related to it should be appreciated by those skilled in the art that; in the scope of claimed invention; the change of other embodiments a lot of and embodiment is possible; and when not departing from protection range of the present disclosure, further increase can be done to described embodiment, delete, replacing and amendment.

Claims (17)

1. a stacked optoelectronic package equipment, it comprises:
Multiple stacked parts in the packaging part comprising encapsulating material, described packaging part has for described packaging part provides the encapsulating housing of sidewall and diapire and the capping for the top that seals described packaging part, and described multiple stacked parts comprise:
Have the first swaging die of end face and bottom surface, described first swaging die comprises at least one penetrating via be formed in described bottom surface;
Bed die, described bed die have at least one electric traces comprised thereon end face and be coupled to described electric traces for radiative light source die;
At least one in the described penetrating via of wherein said first swaging die is aimed at described electric traces;
Wherein said first swaging die is engaged to described bed die;
Wherein said electric traces in described penetrating via, and does not contact described first swaging die to provide inner vacuum hermetically-sealed construction, and
Photoelectric detector mould and PD mould, it is optically coupled to receive the described light being derived from described light source die.
2. stacked optoelectronic package equipment according to claim 1, wherein said at least one electric traces comprises more than first described electric traces, and in described penetrating via described at least one to comprise more than second a described penetrating via, described more than first wherein all described electric traces are jointly in described more than second described penetrating vias.
3. stacked optoelectronic package equipment according to claim 1, is included in the heater on the described end face of described bed die further.
4. stacked optoelectronic package equipment according to claim 1, large at least 2 μm of the thickness of electric traces described in the aspect ratio of wherein said penetrating via, and throughout the minimum widith of the described penetrating via of the thickness of described electric traces than large at least 20 μm of the width of described electric traces.
5. stacked optoelectronic package equipment according to claim 1, is included in the optical mode on described first swaging die and the sealed mould on described optical mode further.
6. stacked optoelectronic package equipment according to claim 1, wherein said first swaging die comprises glass.
7. stacked optoelectronic package equipment according to claim 1, wherein said first swaging die comprises silicon.
8. stacked optoelectronic package equipment according to claim 1, wherein said PD mould is installed on the base part of enclosed inside part, described enclosed inside part inside described packaging part, wherein said enclosed inside part have relative with described base part, towards the open top of the described diapire of described packaging part.
9. a stacked optoelectronic package equipment, it comprises:
Multiple stacked parts in the packaging part comprising encapsulating material, described packaging part has for described packaging part provides the encapsulating housing of sidewall and diapire and the capping for the top that seals described packaging part, and described multiple stacked parts comprise:
Have the first swaging die of end face and bottom surface, described first swaging die comprises at least one penetrating via be formed in described bottom surface;
Bed die, described bed die have at least one electric traces comprised thereon end face and be coupled to described electric traces for radiative light source die;
At least one in the described penetrating via of wherein said first swaging die is aimed at described electric traces;
Wherein said first swaging die is engaged to described bed die;
Wherein said electric traces in described penetrating via, and does not contact described first swaging die to provide inner vacuum hermetically-sealed construction;
Optical mode on described first swaging die;
Sealed mould on described optical mode;
The second swaging die on described sealed mould, and
Photoelectric detector mould and PD mould, it is optically coupled to receive the light being derived from described light source die.
10. form a method for the stacked optoelectronic device of encapsulation, it comprises:
By bottom mould postioning on the diapire of packaging part comprising encapsulating material, described packaging part has the encapsulating housing providing sidewall and described diapire, and described bed die has the end face that comprises at least one electric traces and thereon for radiative light source die;
Be positioned on the described end face of described bed die by first swaging die with end face and bottom surface, described first swaging die comprises at least one penetrating via be formed in described bottom surface, and described penetrating via is aimed at described electric traces;
Join described first swaging die to described bed die, wherein said electric traces in described penetrating via, and does not contact described first swaging die, to provide inner vacuum hermetically-sealed construction;
Being positioned at by photoelectric detector mould PD mould is derived from the position of described light of described light source die by being coupled to receive;
Vacuum is produced in described packaging part, and;
By lidstock on the top of described sidewall, for being sealed in the described packaging part under described vacuum.
11. methods according to claim 10, comprise further and being positioned on described first swaging die by optical mode, and be positioned on described optical mode by sealed mould.
12. methods according to claim 10, wherein said PD mould is installed on the base part of enclosed inside part, described enclosed inside part inside described packaging part, described enclosed inside part have relative with described base part, towards the open top of the described diapire of described packaging part.
13. methods according to claim 10, large at least 2 μm of the thickness of electric traces described in the aspect ratio of wherein said penetrating via, and throughout the width of the described penetrating via of the thickness of described electric traces than large at least 20 μm of the width of described electric traces.
14. methods according to claim 10, wherein said first swaging die comprises glass.
15. methods according to claim 10, wherein said first swaging die comprises silicon, and described method comprises self termination wet etching further to form described penetrating via, and described penetrating via is formed in the described bottom surface of described first swaging die.
16. methods according to claim 10, wherein said at least one electric traces is included in the heater on the described end face of described bed die further.
17. methods according to claim 10, wherein said at least one electric traces comprises more than first described electric traces, and in described penetrating via described at least one to comprise more than second a described penetrating via, and all described more than first described electric traces are jointly in described more than second described penetrating vias.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115249749A (en) * 2021-04-25 2022-10-28 同方威视技术股份有限公司 Packaging structure of cadmium zinc telluride detector

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9024397B2 (en) * 2012-01-07 2015-05-05 Texas Instruments Incorporated Thermally-insulated micro-fabricated atomic clock structure and method of forming the atomic clock structure
US9437782B2 (en) 2014-06-18 2016-09-06 X-Celeprint Limited Micro assembled LED displays and lighting elements
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US9559493B2 (en) * 2015-06-09 2017-01-31 Sae Magnetics (H.K.) Ltd. Power monitoring device and transmitter having same
US9806067B2 (en) * 2015-07-20 2017-10-31 Globalfoundries Inc. Die-die stacking
US10380930B2 (en) 2015-08-24 2019-08-13 X-Celeprint Limited Heterogeneous light emitter display system
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
US9793237B2 (en) 2015-10-19 2017-10-17 Qorvo Us, Inc. Hollow-cavity flip-chip package with reinforced interconnects and process for making the same
US9837394B2 (en) * 2015-12-02 2017-12-05 International Business Machines Corporation Self-aligned three dimensional chip stack and method for making the same
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
US9799637B2 (en) * 2016-02-12 2017-10-24 Qorvo Us, Inc. Semiconductor package with lid having lid conductive structure
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
US10153256B2 (en) * 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
JP6728850B2 (en) * 2016-03-25 2020-07-22 セイコーエプソン株式会社 Quantum interference device, atomic oscillator and electronic equipment
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
CN110049210B (en) * 2016-04-08 2021-07-06 台湾东电化股份有限公司 Camera module
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10268163B2 (en) * 2016-10-19 2019-04-23 Ricoh Company, Ltd. Atomic oscillator and method for manufacturing atomic oscillator
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution
DE102017109165B4 (en) * 2017-04-28 2021-12-30 Valeo Schalter Und Sensoren Gmbh Optoelectronic detection device for a motor vehicle
US10589986B2 (en) * 2017-09-06 2020-03-17 Texas Instruments Incorporated Packaging a sealed cavity in an electronic device
JP6702349B2 (en) * 2018-03-27 2020-06-03 日亜化学工業株式会社 Light emitting device
US10976386B2 (en) 2018-07-17 2021-04-13 Hi Llc Magnetic field measurement system and method of using variable dynamic range optical magnetometers
US11136647B2 (en) 2018-08-17 2021-10-05 Hi Llc Dispensing of alkali metals mediated by zero oxidation state gold surfaces
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US10627460B2 (en) 2018-08-28 2020-04-21 Hi Llc Systems and methods including multi-mode operation of optically pumped magnetometer(s)
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US11370941B2 (en) 2018-10-19 2022-06-28 Hi Llc Methods and systems using molecular glue for covalent bonding of solid substrates
US11307268B2 (en) 2018-12-18 2022-04-19 Hi Llc Covalently-bound anti-relaxation surface coatings and application in magnetometers
US11294008B2 (en) 2019-01-25 2022-04-05 Hi Llc Magnetic field measurement system with amplitude-selective magnetic shield
US11022658B2 (en) 2019-02-12 2021-06-01 Hi Llc Neural feedback loop filters for enhanced dynamic range magnetoencephalography (MEG) systems and methods
JP7363053B2 (en) * 2019-02-27 2023-10-18 富士フイルムビジネスイノベーション株式会社 Light-emitting devices, light-emitting devices, optical devices, and information processing devices
US11205886B2 (en) * 2019-03-12 2021-12-21 Nichia Corporation Method of manufacturing optical member, optical member, and light emitting device
US11360164B2 (en) 2019-03-29 2022-06-14 Hi Llc Integrated magnetometer arrays for magnetoencephalography (MEG) detection systems and methods
US11269027B2 (en) 2019-04-23 2022-03-08 Hi Llc Compact optically pumped magnetometers with pump and probe configuration and systems and methods
US11698419B2 (en) 2019-05-03 2023-07-11 Hi Llc Systems and methods for concentrating alkali metal within a vapor cell of a magnetometer away from a transit path of light
US11839474B2 (en) 2019-05-31 2023-12-12 Hi Llc Magnetoencephalography (MEG) phantoms for simulating neural activity
US10707644B1 (en) * 2019-06-05 2020-07-07 Shanghai Orient-Chip Technology Co., Ltd. Laser diode device
US11131729B2 (en) 2019-06-21 2021-09-28 Hi Llc Systems and methods with angled input beams for an optically pumped magnetometer
US11415641B2 (en) 2019-07-12 2022-08-16 Hi Llc Detachable arrangement for on-scalp magnetoencephalography (MEG) calibration
US10996293B2 (en) 2019-08-06 2021-05-04 Hi Llc Systems and methods having an optical magnetometer array with beam splitters
US11747413B2 (en) 2019-09-03 2023-09-05 Hi Llc Methods and systems for fast field zeroing for magnetoencephalography (MEG)
WO2021091867A1 (en) 2019-11-08 2021-05-14 Hi Llc Methods and systems for homogenous optically-pumped vapor cell array assembly from discrete vapor cells
US11980466B2 (en) 2020-02-12 2024-05-14 Hi Llc Nested and parallel feedback control loops for ultra-fine measurements of magnetic fields from the brain using a neural detection system
US11604236B2 (en) 2020-02-12 2023-03-14 Hi Llc Optimal methods to feedback control and estimate magnetic fields to enable a neural detection system to measure magnetic fields from the brain
US11872042B2 (en) 2020-02-12 2024-01-16 Hi Llc Self-calibration of flux gate offset and gain drift to improve measurement accuracy of magnetic fields from the brain using a wearable neural detection system
US11801003B2 (en) 2020-02-12 2023-10-31 Hi Llc Estimating the magnetic field at distances from direct measurements to enable fine sensors to measure the magnetic field from the brain using a neural detection system
US11977134B2 (en) 2020-02-24 2024-05-07 Hi Llc Mitigation of an effect of capacitively coupled current while driving a sensor component over an unshielded twisted pair wire configuration
WO2021242682A1 (en) 2020-05-28 2021-12-02 Hi Llc Systems and methods for recording biomagnetic fields of the human heart
US11428756B2 (en) 2020-05-28 2022-08-30 Hi Llc Magnetic field measurement or recording systems with validation using optical tracking data
WO2021242680A1 (en) 2020-05-28 2021-12-02 Hi Llc Systems and methods for recording neural activity
US11766217B2 (en) 2020-05-28 2023-09-26 Hi Llc Systems and methods for multimodal pose and motion tracking for magnetic field measurement or recording systems
CN111883436B (en) * 2020-07-14 2022-07-26 通富微电子股份有限公司技术研发分公司 Chip packaging method and chip packaging device
US11604237B2 (en) 2021-01-08 2023-03-14 Hi Llc Devices, systems, and methods with optical pumping magnetometers for three-axis magnetic field sensing
US11803018B2 (en) 2021-01-12 2023-10-31 Hi Llc Devices, systems, and methods with a piezoelectric-driven light intensity modulator
US12007454B2 (en) 2021-03-11 2024-06-11 Hi Llc Devices, systems, and methods for suppressing optical noise in optically pumped magnetometers
DE102021113715A1 (en) * 2021-05-27 2022-12-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Semiconductor device and method of manufacturing a semiconductor device
IL291200A (en) * 2022-03-08 2023-10-01 סייפפילדס טכנול& Magnetic field cancellation system

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130147472A1 (en) * 2011-12-07 2013-06-13 William French Micro-Fabricated Atomic Magnetometer and Method of Forming the Magnetometer
US20130176703A1 (en) * 2012-01-07 2013-07-11 Peter J. Hopper Thermally-Insulated Micro-Fabricated Atomic Clock Structure and Method of Forming the Atomic Clock Structure
CN203745624U (en) * 2013-09-29 2014-07-30 北京纳特斯拉科技有限公司 Nonmagnetic full-sealed three-shaft fluxgate magnetometer

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4571405B2 (en) * 2001-08-24 2010-10-27 ショット アクチエンゲゼルシャフト Manufacturing method of electronic parts
DE10141571B8 (en) * 2001-08-24 2005-05-25 Schott Ag A method of assembling a semiconductor device and integrated circuit fabricated therewith that is suitable for three-dimensional, multi-layered circuits
US6888374B2 (en) 2002-06-17 2005-05-03 Stmicroelectronics Pvt. Ltd. FPGA peripheral routing with symmetric edge termination at FPGA boundaries
US8259765B2 (en) * 2006-12-06 2012-09-04 Google Inc. Passive phase control in an external cavity laser
JP4483896B2 (en) * 2007-05-16 2010-06-16 ソニー株式会社 Semiconductor device and manufacturing method thereof
KR100840098B1 (en) * 2007-07-04 2008-06-19 삼성에스디아이 주식회사 Organic light emitting device and method of manufacturing the same
JP5558446B2 (en) * 2011-09-26 2014-07-23 株式会社東芝 Photoelectric conversion device and manufacturing method thereof
DE102012109211A1 (en) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh An optoelectronic component device, method for producing an optoelectronic component device and method for operating an optoelectronic component device
US9568565B2 (en) 2013-07-23 2017-02-14 Texas Instruments Incorporated Vapor cell structure having cavities connected by channels for micro-fabricated atomic clocks, magnetometers, and other devices
KR102035252B1 (en) * 2013-09-03 2019-11-11 삼성디스플레이 주식회사 Display device including sealant and manufacturing method thereof
TWI506823B (en) * 2013-09-16 2015-11-01 Lextar Electronics Corp Package structure of light-emitting device and method for manufacturing the same
CN103715371A (en) * 2013-12-16 2014-04-09 京东方科技集团股份有限公司 Packaging method and display device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130147472A1 (en) * 2011-12-07 2013-06-13 William French Micro-Fabricated Atomic Magnetometer and Method of Forming the Magnetometer
US20130176703A1 (en) * 2012-01-07 2013-07-11 Peter J. Hopper Thermally-Insulated Micro-Fabricated Atomic Clock Structure and Method of Forming the Atomic Clock Structure
CN203745624U (en) * 2013-09-29 2014-07-30 北京纳特斯拉科技有限公司 Nonmagnetic full-sealed three-shaft fluxgate magnetometer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115249749A (en) * 2021-04-25 2022-10-28 同方威视技术股份有限公司 Packaging structure of cadmium zinc telluride detector
CN115249749B (en) * 2021-04-25 2024-01-16 同方威视技术股份有限公司 Encapsulation structure of tellurium-zinc-cadmium detector

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