CN105470187B - A kind of lifting disk body device for preventing wafer from sliding - Google Patents
A kind of lifting disk body device for preventing wafer from sliding Download PDFInfo
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- CN105470187B CN105470187B CN201410466807.4A CN201410466807A CN105470187B CN 105470187 B CN105470187 B CN 105470187B CN 201410466807 A CN201410466807 A CN 201410466807A CN 105470187 B CN105470187 B CN 105470187B
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- disk body
- wafer
- external seal
- fixed cover
- heating
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Abstract
The present invention relates to the devices that wafer when entering hot plate technique declines mode, specifically a kind of lifting disk body device for preventing wafer from sliding, including fixed cover, lift disk body, ejector pin mechanism and bottom plate, fixed cover and ejector pin mechanism are separately mounted on bottom plate, lifting disk body is between fixed cover and ejector pin mechanism, including heating disk body, external seal body, power plant and latch, power plant is mounted in fixed plate, drive the lifting of external seal body, heating disk body is placed in external seal body, with its lifting, it is along the circumferential direction evenly equipped with multiple latch in the upper surface of heating disk body;Ejector pin mechanism is arranged in heating dish body, is in lower limit support wafer, fixed cover and the sealed connection of external seal body, the formation process chamber that rise to upper limit in heating disk body.The present invention realizes wafer and remains stationary before falling on heating disk body upper surface, evaded the drawbacks of previous wafer elevating mode generates sideslip by the lifting of lifting disk body.
Description
Technical field
The present invention relates to the device that wafer when entering hot plate technique declines mode, specifically one kind prevents wafer from sliding
Lifting disk body device.
Background technology
All it is wafer with movement currently, when wafer is admitted to technique in hot plate.This structure wafer fall on disk it
Before, since wafer and thimble belong to point contact type, wafer rear is again very smooth, brilliant when decline process cylinder being caused just to start
Circle suddenly becomes movement by static, and wafer is unstable in unexpected movement and breaks away;When wafer falls on disk, it will occur
Very big offset causes wafer to be become uneven by heat.And when rising, wafer is moved and is breakked away by static suddenly become,
Wafer cannot be normally clamped by eventually leading to manipulator.
Invention content
In order to solve the problems, such as that wafer breaks away during the motion, the purpose of the present invention is to provide one kind preventing crystalline substance
Round and smooth dynamic lifting disk body device.The lifting disk body device by allow disk body move by wafer it is stationary, avoid existing crystalline substance
The drawbacks of circle up-down mode generates sideslip.
The purpose of the present invention is achieved through the following technical solutions:
The present invention includes fixed cover, lifting disk body, ejector pin mechanism and bottom plate, wherein fixed cover and ejector pin mechanism difference
On the bottom plate, fixed cover be located at the top of ejector pin mechanism, the lifting disk body is located at the fixed cover and thimble
Between mechanism, including heating disk body, external seal body, power plant and latch, which is mounted in the fixed plate,
The external seal body is driven to be lifted between fixed cover and ejector pin mechanism, the heating disk body is placed in external seal body, with institute
The lifting of external seal body is stated, multiple stop for preventing wafer from breakking away along the circumferential direction are evenly equipped in the upper surface of the heating disk body
Pin;The ejector pin mechanism is arranged in heating dish body, is in lower limit support wafer, the fixed cover and rising in heating disk body
To the external seal body sealed connection of upper limit, formation process chamber, the wafer is in upper limit in outer seal and adds with described
Hot plate body contacts, and is limited by the latch.
Wherein:The ejector pin mechanism includes the terminal pad being mounted on bottom plate and is evenly distributed with along the terminal pad circumferencial direction
Thimble, each thimble is arranged in the heating disk body, and the top of each thimble is higher than the heating in lower limit
The upper surface of disk body and the latch;The wafer is in lower limit in heating disk body and is placed on each thimble, the crystalline substance
It is round to keep at least distance of 5mm along short transverse between the latch, the outer edge of the wafer and the latch it
Between radially retain at least distance of 0.05mm;It is provided with identical as the thimble quantity on the heating disk body and corresponds
First through hole, each thimble is arranged in a first through hole;
The power plant is multiple, is respectively positioned on the peripheral, along the circumferential direction uniformly distributed of the ejector pin mechanism, each described dynamic
One end of power apparatus is installed on bottom plate, and the other end is connect with the external seal body, synchronous to drive the external seal
Body and heating disk body lifting;
External seal body upper surface outer edge is along the circumferential direction equipped with groove, and sealing ring is equipped in the groove, described
Sealing ring is in upper limit in outer seal and is sealed against with the fixed cover;The fixed cover is mounted on lower solid by mounting bracket
On fixed board, the lower surface of the fixed cover is recessed axially inward, the outer edge of the fixed cover lower surface in upper limit
The sealing ring on external seal body seals against, and forms the process cavity;
The heating disk body upper edge circumferencial direction is evenly equipped with multiple guiders, which includes guide sleeve and guide post,
The guide sleeve is mounted on the bottom plate, and one end of the guide post is mounted on heating disk body, is led described in other end insertion
It covers and the second through-hole by being opened up on the bottom plate is pierced by;
The fixed cover, the longitudinal center line for heating disk body, external seal body and wafer are conllinear;The external seal body and power
The junction of device is equipped with the jackscrew of adjustment heating disk body levelness.
Advantages of the present invention is with good effect:
1. the fixed cover of the present invention, ejector pin mechanism are fixed, lifting disk body can be realized wafer and fallen on oscilaltion
It is totally stationary when disk, sidesway caused by avoiding wafer from moving suddenly influences the uniformity of wafer heating;And pass through heating
The along the circumferential direction uniformly distributed latch of disk body, realizing wafer will not break away when just leaving heating disk body upper surface, brilliant
Circle after being contacted with thimble again remains stationary state.
2. the ejector pin mechanism of the present invention is fixed on bottom plate, the carrying of wafer may be implemented;By fixed cover and
Ejector pin mechanism is become being completely fixed component from original moving component, it is possible to reduce the design and debugging difficulty that linkage comes, together
When reduce the process time.
3. power plant one end of the present invention is fixed on bottom plate, the other end is connect with external seal body, passes through guiding
Device realizes the smooth vertical lifting of heating disk body and external seal body.
4. the fixed cover of the present invention is contacted with the external seal body positioned at upper limit, and by needed for sealing ring formation process
The processing chamber of sealing ensure that the progress of the normal process of wafer.
5. the heating disk body of the present invention can be adjusted easily by external seal body and the jackscrew of power plant junction
The levelness of whole disk.
Description of the drawings
Fig. 1 is the explosive view of the present invention;
Fig. 2 is the structural schematic diagram after present invention heating disk body declines;
Fig. 3 is the structural schematic diagram of present invention lifting disk body;
Fig. 4 jacks up the structural schematic diagram of wafer for the rising of present invention heating disk body, ejector pin mechanism;
Wherein:1 is fixed cover, and 2 be lifting disk body, and 201 is heat disk body, and 202 be external seal body, and 203 be power plant,
204 be guider, and 2041 be guide sleeve, and 2042 be guide post, and 2043 be the second through-hole, and 205 be latch, and 3 be ejector pin mechanism,
301 be terminal pad, and 302 be thimble, and 303 be first through hole, and 4 be bottom plate, and 5 be mounting bracket, and 6 be wafer, and 7 be process cavity
Room, 8 be sealing ring.
Specific implementation mode
The invention will be further described below in conjunction with the accompanying drawings.
As shown in Figure 1, Figure 3, the present invention includes fixed cover 1, lifting disk body 2, ejector pin mechanism 3 and bottom plate 4, wherein rising
It includes heating disk body 201, external seal body 202, power plant 203, guider 204 and latch 205, thimble machine to drop disk body 2
Structure 3 includes terminal pad 301 and thimble 302.
Lifting disk body device of the present invention is mounted on entirely through bottom plate 4 on the frame of hot plate technique.Terminal pad 301 is solid
It is scheduled on bottom plate 4, multiple thimbles 302 is along the circumferential direction evenly equipped in terminal pad 301, the thimble 302 of the present embodiment is
Three.Fixed cover 1 is fixed in by mounting bracket 5 on bottom plate 4, and positioned at the top of ejector pin mechanism 3, fixed cover 1 and thimble
Mechanism 3 is fixed.Disk body 2 is lifted between fixed cover 1 and ejector pin mechanism 3, wherein power plant 203 is more
It is a, along the circumferential direction uniformly distributed, it is respectively positioned on the periphery of terminal pad 301;The power plant 203 of the present embodiment be cylinder, totally two, with
The longitudinal center line of circular heating disk body 201 is symmetrical arranged, and the line between two power plants 203 and heating disk body
201 longitudinal center line intersects vertically.One end of each power plant 203 is fixed on bottom plate 4, and the other end is all connected to
External seal body 202;External seal body 202 synchronizes driving lifting by two power plants 203, and heating disk body 201 is placed on outer close
It seals in body 202, is lifted with external seal body 202;It is equipped with jackscrew in the junction of outer seal 202 and two power plants 203, it can
Easily to adjust the levelness of heating disk body 201.Heating disk body 201 is disc, and centre is provided with and 302 quantity of thimble
Identical first through hole 303;The first through hole 303 of the present embodiment is three, is corresponded with three thimbles 302, each thimble
302 are arranged in a first through hole 303.Outer edge in 201 upper surface of heating disk body is along the circumferential direction evenly equipped with multiple
The latch 205 of the latch 205 to break away when preventing wafer 6 from rising, the present embodiment is six.It heats under disk body 201
Surface is along the circumferential direction evenly equipped with multiple guiders 204, and the guider 204 of the present embodiment is three;Each guider
204 include guide sleeve 2041 and guide post 2042, and guide sleeve 2041 is fixed on bottom plate 4, and in each guide sleeve 2041 under
The second through-hole 2043 passed through for guide post 2042 is provided in fixed plate 4;One end of guide post 2042 is fixed in heating disk body 201
Lower surface, the other end is inserted into guide sleeve 2041 and three the second through-holes 2043 by being opened up on bottom plate 4 are pierced by.External seal body
202 upper surface outer edges are along the circumferential direction equipped with groove, and sealing ring 8 is equipped in the groove;The lower surface of fixed cover 1 is in an axial direction
It is recessed inwardly, the outer edge of 1 lower surface of fixed cover is sealed against with the sealing ring 8 on the external seal body 202 in upper limit, shape
At process cavity 7.
The fixed cover 1 of the present invention, the longitudinal center line for heating disk body 201, external seal body 202 and wafer 6 are conllinear.Thimble
302 are arranged in the first through hole 303 on heating disk body 201, are in lower limit with external seal body 202 in heating disk body 201, push up
Needle 302 is pierced by by heating disk body 201, supports wafer 6;It is in upper limit, fixed cover 1 and external seal body 202 in outer seal 202
On sealing ring 8 seal against, formation process chamber 7.Wafer is in upper limit in outer seal 202 and is connect with heating disk body 201
It touches, and is limited by latch 205.The top of each thimble 302 is higher than the upper surface of the heating disk body 201 in lower limit and stops
Dynamic pin 205, wafer 6 is in lower limit in heating disk body 201 and is placed on each thimble 302, between the wafer 6 and latch 205
At least distance of 5mm is kept along short transverse, at least 0.05mm is radially retained between the outer edge and latch 205 of wafer 6
Distance.
The operation principle of the present invention is that:
Before lifting disk body device of the present invention work, lifting disk body 2 is in lowest order (lower limit);At this point, thimble 302
It is pierced by by the upper surface of heating disk body 201.Wafer 6 is transmitted to hot plate by manipulator when doing technique, is first put on thimble 302 and prepares
Do technique.
First, the heating disk body 201 and external seal body 202 lifted in disk body 2 drives lower edge three to lead in power plant 203
It is raised above to device 204, when upper surface of the thimble 302 less than heating disk body 201, wafer 6 is by the upper table of heating disk body 201
Face holds up, is contacted with the upper surface of heating disk body 201;And before being contacted with the upper surface of heating disk body 201, wafer 6 is to protect
It holds static.At this moment, external seal body 202 drives heating disk body 201 to continue to rise to specified altitude assignment (upper limit), ejector pin mechanism 3
In thimble 302 be pierced by by heating disk body 201, the sealing ring 8 on external seal body 202 is contacted with fixed cover 1, passes through external seal body
202 along the circumferential direction on sealing ring 8 constitute the processing chamber 7 of sealing, wafer 6 is located in the processing chamber 7, and technique is formally opened
Begin.During this, wafer 6 is all to maintain stationary state on the upper surface by falling on heating disk body 201 on thimble 302, thus
Ensure position when wafer 6 remains mechanical hand feed, it can be with for heating uniformity of the wafer 6 on heating disk body 201
It better ensures that.
When technique terminates, heating disk body 201 is begun to decline with external seal body 202, when the thimble 302 in ejector pin mechanism 3 is worn
When entering to heat disk body 201 and being higher than the upper surface of heating disk body 201, wafer 6 and thimble 302 contact, this is wafer 6 suddenly by quiet
Only state becomes motion state, it may occur that it breaks away, at this moment six 205 meetings of latch along the circumferential direction uniformly distributed in heating dish 201
The sideslip of wafer 6 suddenly is prevented, can also continue to keep in situ static under the protection of latch 205.When thimble 302 is wafer
6 hold up from ((heating disk body 201 and external seal body 202 are in lower limit)) after the upper surface specified altitude assignment for heating disk body 201, brilliant
Circle 6 becomes stationary state again.Last manipulator clamping wafer 6 takes lifting disk body device out of, and entire technique terminates.
Claims (9)
1. a kind of lifting disk body device for preventing wafer from sliding, it is characterised in that:Including fixed cover (1), lifting disk body (2), top
Needle mechanism (3) and bottom plate (4), wherein fixed cover (1) and ejector pin mechanism (3) be separately mounted on the bottom plate (4),
Fixed cover (1) is located at the top of ejector pin mechanism (3), the lifting disk body (2) be located at the fixed cover (1) and ejector pin mechanism (3) it
Between, including heating disk body (201), external seal body (202), power plant (203) and latch (205), the power plant (203)
In the fixed plate (4), the external seal body (202) is driven to be lifted between fixed cover (1) and ejector pin mechanism (3),
The heating disk body (201) is placed in external seal body (202), is lifted with the external seal body (202), in the heating disk body
(201) upper surface is along the circumferential direction evenly equipped with multiple latch (205) for preventing wafer (6) from breakking away;The ejector pin mechanism (3)
Be arranged in heating disk body (201), be in lower limit in heating disk body (201) and support wafer (6), the fixed cover (1) with it is upper
External seal body (202) sealed connection, the formation process chamber (7) of upper limit are risen to, the wafer is in outer seal (202)
Upper limit is contacted with the heating disk body (201), and is limited by the latch (205);
The ejector pin mechanism (3) include be mounted on bottom plate (4) on terminal pad (301) and along terminal pad (301) circumference
The uniformly distributed thimble in direction (302), each thimble (302) are arranged in the heating disk body (201), and the top of each thimble (302)
Upper surface of the end higher than the heating disk body (201) in lower limit and the latch (205).
2. by the lifting disk body device for preventing wafer from sliding described in claim 1, it is characterised in that:The wafer (6) is being heated
Disk body (201) is in lower limit and is placed on each thimble (302), along height between the wafer (6) and the latch (205)
Spend direction and keep at least distance of 5mm, radially retained between the outer edge and the latch (205) of the wafer (6) to
The distance of few 0.05mm.
3. by the lifting disk body device for preventing wafer from sliding described in claims 1 or 2, it is characterised in that:The heating disk body
(201) identical as the thimble (302) quantity and one-to-one first through hole (303) is provided on, each thimble (302) is equal
It is arranged in a first through hole (303).
4. by the lifting disk body device for preventing wafer from sliding described in claim 1, it is characterised in that:The power plant (203)
It is multiple, is respectively positioned on the peripheral, along the circumferential direction uniformly distributed of the ejector pin mechanism (3), one end of each power plant (203)
It is installed on bottom plate (4), the other end is connect with the external seal body (202), synchronous to drive the external seal body
(202) and heating disk body (201) lifts.
5. by the lifting disk body device for preventing wafer from sliding described in claim 1, it is characterised in that:The external seal body (202)
Upper surface outer edge is along the circumferential direction equipped with groove, is equipped with sealing ring (8) in the groove, the sealing ring (8) is in external seal
Body (202) is in upper limit and is sealed against with the fixed cover (1).
6. by the lifting disk body device for preventing wafer from sliding described in claim 5, it is characterised in that:The fixed cover (1) passes through
Mounting bracket (5) is mounted on bottom plate (4), and the lower surface of the fixed cover (1) is recessed axially inward, the fixed cover (1)
The outer edge of lower surface is sealed against with the sealing ring (8) on the external seal body (202) in upper limit, forms the work
Skill cavity (7).
7. by the lifting disk body device for preventing wafer from sliding described in claim 1, it is characterised in that:The heating disk body (201)
On be along the circumferential direction evenly equipped with multiple guiders (204), which includes guide sleeve (2041) and guide post
(2042), the guide sleeve (2041) is mounted on the bottom plate (4), and one end of the guide post (2042) is mounted on heating dish
On body (201), the other end is inserted into the guide sleeve (2041) and the second through-hole (2043) by being opened up on the bottom plate (4)
It is pierced by.
8. by the lifting disk body device for preventing wafer from sliding described in claim 1, it is characterised in that:The fixed cover (1), heating
The longitudinal center line of disk body (201), external seal body (202) and wafer (6) is conllinear.
9. by the lifting disk body device for preventing wafer from sliding described in claim 1, it is characterised in that:The external seal body (202)
The jackscrew of adjustment heating disk body (201) levelness is equipped with the junction of power plant (203).
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CN201410466807.4A CN105470187B (en) | 2014-09-12 | 2014-09-12 | A kind of lifting disk body device for preventing wafer from sliding |
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CN201410466807.4A CN105470187B (en) | 2014-09-12 | 2014-09-12 | A kind of lifting disk body device for preventing wafer from sliding |
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CN105470187B true CN105470187B (en) | 2018-08-14 |
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CN107610997A (en) * | 2017-07-20 | 2018-01-19 | 江苏鲁汶仪器有限公司 | A kind of gaseous corrosion cavity with wafer position detection means |
CN107610998B (en) * | 2017-07-21 | 2020-09-15 | 江苏鲁汶仪器有限公司 | Gas phase corrosion cavity capable of adjusting internal and external pressure difference and method for gas phase corrosion by using same |
CN111336792B (en) * | 2018-12-19 | 2022-03-11 | 江苏鲁汶仪器有限公司 | Cavity for drying micro water drops |
CN111524842A (en) * | 2020-07-06 | 2020-08-11 | 宁波润华全芯微电子设备有限公司 | Progressive baking and heating device |
CN112647062B (en) * | 2020-12-11 | 2021-07-27 | 无锡邑文电子科技有限公司 | Silicon carbide CVD process cavity device and using method |
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CN101459057B (en) * | 2008-12-30 | 2010-08-11 | 清华大学 | Laser annealing equipment and annealing process for semi-conductor manufacturing |
CN102446802A (en) * | 2011-12-15 | 2012-05-09 | 清华大学 | Wafer platform |
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JP5767260B2 (en) * | 2013-02-25 | 2015-08-19 | 東京エレクトロン株式会社 | Substrate heat treatment apparatus, substrate heat treatment method, and substrate heat treatment recording medium |
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2014
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101459057B (en) * | 2008-12-30 | 2010-08-11 | 清华大学 | Laser annealing equipment and annealing process for semi-conductor manufacturing |
CN102446802A (en) * | 2011-12-15 | 2012-05-09 | 清华大学 | Wafer platform |
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Address after: 110168 No. 16 Feiyun Road, Hunnan District, Shenyang City, Liaoning Province Patentee after: Shenyang Core Source Microelectronic Equipment Co., Ltd. Address before: 110168 No. 16 Feiyun Road, Hunnan New District, Shenyang City, Liaoning Province Patentee before: Shenyang Siayuan Electronic Equipment Co., Ltd. |