CN105467291B - A kind of semiconductor laser chip test fixing device and its method - Google Patents
A kind of semiconductor laser chip test fixing device and its method Download PDFInfo
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- CN105467291B CN105467291B CN201511024063.1A CN201511024063A CN105467291B CN 105467291 B CN105467291 B CN 105467291B CN 201511024063 A CN201511024063 A CN 201511024063A CN 105467291 B CN105467291 B CN 105467291B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2601—Apparatus or methods therefor
Abstract
The present invention proposes a kind of new semiconductor laser chip test fixing device and its method, can avoid the influence to chip output characteristics, and improve the heat dissipation effect of chip.In the semiconductor laser chip test fixing device, the upper surface of the chip carrier platform of insulating heat-conductive material is provided with spaced a plurality of metal film, and the length direction of metal film is parallel with the luminescence unit cavity length direction of chip to be measured；Each metal film P face current electrode independent as one, is accordingly fixed with individual electrical power contact head；The parallel vacuum absorption holes for offering bar shaped between the current electrode of adjacent P faces, vacuum absorption holes penetrate through the upper and lower surface of chip carrier platform, and all vacuum absorption holes are communicated with the interior gas circuit duct of vacuum absorption device；Electrode of the N faces current electrode for an entirety, lower surface flat smooth can be completely bonded with the N faces electrode of chip to be measured.
Description
Technical field
The present invention relates to a kind of semiconductor laser chip test fixing device and its methods.
Background technology
Semiconductor laser has many advantages, such as that small, light-weight, electro-optical efficiency is high, medical, military, logical
The fields such as letter are widely applied in a steady stream as light source and pump light.Semiconductor laser chip is usually required by encapsulation
Form just manufacture use after device.Before semiconductor laser chip encapsulation, in order to improve the yield rate of encapsulation, need half-and-half
Conductor laser chip carries out relevant performance test, picks out qualified semiconductor laser chip, eliminates underproof
Chip..In the high-power application field of semiconductor laser, semiconductor laser chip is often formed with bar item to be existed, bar
Usually there are multiple luminescence units in item, and whether qualification decides whether bar item is qualified to the output characteristics of luminescence unit.
In semiconductor laser bar test process, since the performance tested is more, the testing time is longer, chip and chip
The contact area of fixing device is too small to cause thermal-arrest in chip excessively to burn chip, and be unfavorable for test data of chip
The damage of consistency and increase test process to chip, laser test device need to have following three points：First, it needs rationally
Temperature control equipment, ensure that the heat dissipation of all luminescence units is consistent with heating；Second, reasonable manner is needed to carry out fixed core
Piece increases the heat dissipation of chip；Third needs to keep the consistency of chip stress, and the stress for reducing chip damages chip,
So as to reduce harmful effect of the fixing device to chip.
More mechanism noise spectra of semiconductor lasers test systems are studied both at home and abroad at present, it is external as ILX, Yel,
There are experience for many years in the companies such as Corning in semiconductor laser test system.The article of Corning companies report
It is disclosed in (JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL.23, NO.2, FEBRUARY 2005) a kind of for half
The fixing device of conductor Laser chip testing as shown in Figure 2 and Figure 3, is primarily adapted for use in test single tube and bar item.The program is：P
Face current electrode is located at the top of chip, and (column construction) contacts Injection Current, core with the p side electrode of chip in the form of probe
The N faces electrode of piece is adsorbed by the vacuum gap on chip carrier platform, and gap is parallel to Cavity surface, while conductive chip carrier is put down
Platform is electrically connected with the N faces electrode self-assembling formation of chip.In this fixed installation structure, chip P faces contact area is uneven, makes
It obtains P faces stress and probe is uneven to the heat transfer in P faces；Moreover, the gap of vacuum suction is parallel to chip Cavity surface, also easily make
There is discontinuity into chip along resonance cavity direction；These factors can all lead to the damage of chip and chip output characteristics
Decline.
It is domestic such as Xi'an Ju Guang scientific ＆ technical corporation, on more test systems have been applied for patent (CN102519709A,
CN102520336A etc.), the method for laser is pressed mostly using rubber and Spring screws, connecing between Spring screws and laser
Tactile mode is point contact, and chip stress and heat dissipation cannot all reach the requirement of consistency.Chinese Academy of Sciences's Suzhou biomedicine work
Journey technical research institute (203643563 U of CN) has applied for the test patent to chip.Not only contain bullet in the contact device of use
Spring needle, further includes air bag, which is unfavorable for making, and similarly there are stress and radiates uneven
The problem of.
Invention content
The present invention proposes a kind of new semiconductor laser chip test fixing device and its method, can avoid to chip
The influence of output characteristics, and improve the heat dissipation effect of chip.
Technical scheme is as follows：
A kind of semiconductor laser chip test fixing device, including chip carrier platform, vacuum absorption device, temperature control
Device processed, P faces current electrode and N faces current electrode, the lower surface of chip carrier platform are bonded with vacuum absorption device, the temperature
Control device is spent through vacuum absorption device to chip carrier platform heat loss through conduction；Chip carrier platform or vacuum absorption device are also
It is provided with temperature sensing hole；Be different from the prior art is：Chip carrier platform is insulating heat-conductive material, in chip carrier platform
Upper surface be provided with spaced a plurality of metal film, the length direction of metal film and the luminescence unit chamber of chip to be measured are rectangular
To parallel；Each metal film P face current electrode independent as one, for the P faces with the single luminescence unit of chip to be measured
Electrode corresponds to fitting completely, and individual electrical power contact head is accordingly fixed on each metal film；In adjacent P faces current electrode it
Between the parallel vacuum absorption holes for offering bar shaped, vacuum absorption holes penetrate through the upper and lower surface of chip carrier platform, and all vacuum are inhaled
The interior gas circuit duct of attached Kong Junyu vacuum absorption devices communicates；Electrode of the N faces current electrode for an entirety, positioned at P faces
The top of current electrode, and corresponding electrical power contact head present position is avoided, the lower surface flat smooth of N faces current electrode makes it
It can be completely bonded with the N faces electrode of chip to be measured.
On the basis of above scheme, the present invention has also further made following optimization：
In order to which being bonded for P faces current electrode and chip p side electrode is better achieved, specifically there are following two chip carriers to put down
The structure design of platform：
1st, the upper surface flat smooth of chip carrier platform, a plurality of metal film are plated on the upper table of chip carrier platform
Face.
2nd, the upper surface of chip carrier platform sets shallow slot respectively corresponding to the position of a plurality of metal film, and metal film is filled out
Enter the upper surface flat smooth that corresponding shallow slot causes chip carrier platform.
The width of above-mentioned P faces current electrode is more than the width of the p side electrode of the single luminescence unit of chip to be measured, and length is more than
The chamber of chip light emitting unit to be measured is long.
The width and spacing of above-mentioned a plurality of metal film meet：Center of each luminescence unit of chip to be measured along cavity length direction
Line of symmetry is overlapped with the centre symmetry line of corresponding P faces current electrode, and vacuum absorption holes correspond to the adjacent p side electrode of chip to be measured
Between region, the distance between adjacent vacuum adsorption hole is less than the width of luminescence unit.
The effective length of above-mentioned P faces current electrode is more than the length of vacuum absorption holes, and corresponding electrical power contact head exceeds
Vacuum absorption holes region corresponding in the longitudinal direction.
Above-mentioned N faces current electrode covers all P faces current electrodes arranged on chip carrier platform in the longitudinal direction,
The width of N faces current electrode is less than the length of vacuum absorption holes.
The length direction of above-mentioned N faces current electrode and the length direction of P faces current electrode are mutually perpendicular to.
The main body of above-mentioned vacuum absorption device is a heat-conducting block, and the interior gas circuit duct is opened in the heat-conducting block upper surface
If strip groove, the projection of the vacuum absorption holes of the strip groove and bar shaped in the lower surface of chip carrier platform mutually hangs down
Directly.
Above-mentioned temperature sensing hole is opened in the side of vacuum absorption device, and the length direction of the side and vacuum absorption holes is put down
Row.
Using the operating method of above-mentioned semiconductor laser chip test fixing device, include the following steps：
(1) chip to be measured is positioned over to the upper surface of chip carrier platform, makes the P faces of each luminescence unit of chip to be measured
Electrode is bonded completely with corresponding P faces current electrode, and luminescence unit is along centre symmetry line and the P faces current electrode of cavity length direction
Centre symmetry line overlaps；
(2) vacuum absorption device works, and reduces the air pressure in vacuum absorption holes, chip to be measured is made to be adsorbed in chip carrier and is put down
Platform surface；
(3) N faces current electrode is moved down, N faces current electrode is made to be bonded completely with the N faces electrode of chip to be measured；
(4) temperature control equipment works, and is automatically adjusted by temperature sensing hole measurement and feedback temperature so that chip
Carrier platform underlaying surface temperature reaches set temperature；
(5) the defeated of each luminescence unit of chip to be measured is tested to the electrical power contact head Injection Current of P faces current electrode respectively
Go out characteristic；
(6) after the completion of chip testing to be measured, N faces current electrode is moved up, vacuum absorption device is stopped, removes and treat
Survey chip.
Compared with prior art, beneficial effects of the present invention：
1st, the uniformity of chip stress is improved, reduction chip testing process is damaged caused by chip (to be avoided to resonance
Cavity configuration has an impact), improve the uniformity of chip light emitting.
2nd, the contact surface area of chip and fixing device is increased, improves the heat dissipation of chip.
3rd, the uniformity of active area temperature is improved.
Description of the drawings
Fig. 1 is the structure diagram of the single luminescence unit of semiconductor laser chip.
Fig. 2 is the schematic diagram (omitting the structure below chip carrier platform) of Corning companies scheme.
Fig. 3 is the structure diagram of Fig. 2 chips carrier platforms.
Fig. 4 is the schematic diagram of the present invention program.
Fig. 5 is the structure diagram of vacuum absorption device in Fig. 4.
Fig. 6 is the structure diagram of Fig. 4 chips carrier platforms.
Fig. 7 is the temperature profile of apparatus of the present invention, wherein (a) is the front cavity surface temperature of chip and the front surface temperature of device
Degree distribution, (b) are limiting layer Temperature Distribution.
Fig. 8 is the temperature profile of the prior art (shown in Fig. 2) device, wherein (a) is chip front cavity surface temperature and device
Front surface Temperature Distribution, (b) be limiting layer Temperature Distribution.
Drawing reference numeral explanation：
1-N faces current electrode, 2- chips to be measured, 3- chip carrier platforms, 4-P faces current electrode, 5-P faces current electrode connect
Head, 6- vacuum absorption holes, 7- vacuum absorption devices, 8- temperature sensings hole, the external gas circuit holes of 9-, gas circuit hole in 10-, 11- temperature
Control device (TEC)；
201-P faces electrode；202-P bread crumbs；203- limiting layers；204N bread crumbs；205- substrates；206-N faces electrode.
Specific embodiment
As shown in figure 4, the semiconductor laser chip test fixing device of the present invention includes chip carrier platform, vacuum is inhaled
Adsorption device and temperature control equipment (TEC), using suction type fixed chip.Chip carrier platform upper surface is provided with discrete
P faces current electrode and electrode contact, vacuum absorption device connection vacuum pump.The difference of the present invention and the prior art mainly exist
In：
1st, suction type is different, and the hole of vacuum suction of the invention is parallel to resonator, perpendicular to Cavity surface.
2nd, the way of contact is different.In the present invention, the p side electrode of chip and the current electrode in P faces completely attach to, P faces stress
Uniform heat conduction is uniform.N faces electrode and the current electrode in N faces completely attach to, and N faces stress and heat conduction are uniform
3rd, adsorption site is different.The adsorption site of the present invention is located between the luminescence unit of bar item, vacuum absorption holes and core
The electrode of piece P bread layer surfaces is staggered.
The chip carrier platform of the present invention is a kind of insulating heat-conductive platform, and ceramic AlN, diamond etc. may be selected in material.Core
Piece carrier platform surface is smooth, is coated with metal, forms multiple rows of P faces current electrode, and P faces current electrode is discrete electrode, mutually not
It is connected, each electrode assembles respective contact head, which is used to connect external power supply.Vacuum absorption holes are located at P faces power supply electricity
The both sides of pole, all vacuum absorption holes are finally all communicated in vacuum absorption device.Electrode of the N faces current electrode for an entirety,
Electrode size is more than chip.
P faces current electrode preferred metal materials gold, but it is not limited to gold.The width of P faces current electrode is more than P bread layer surfaces
Electrode, length be more than chip chamber it is long, thickness be several nm.
The present invention is applicable not only to bar chip of multiple luminescence units of electrode independence, is also applied for the tool of electrode independence
It is standby to go out optical property but not to be fabricated to bar chip of single tube, single tube chip is applied also for certainly.
The chip heat distribution of the present invention and the prior art (structure shown in Fig. 2) as shown in Figure 7 and Figure 8, passes through comparison respectively
The Temperature Distribution of two figures can be seen that tested using apparatus of the present invention after, what the temperature in chip heat production area was tested than the prior art
The temperature of active area is low, and chip medium temperature is less than both ends temperature, is conducive to reduce damage of the temperature to Cavity surface, and the present invention
The phenomenon that adsorption hole corresponding position temperature is excessively high above carrier platform is eliminated, shows the temperature point of the active area of apparatus of the present invention
Cloth is more uniform, is conducive to improve stability of the temperature to laser output performance.Illustrate that apparatus of the present invention are beneficial to chip and dissipate
Heat is beneficial to improve the uniformity of chip active area temperature, is beneficial to improve the output characteristics of bare chip.
In order to further illustrate the present invention than the remarkable result of existing structure, applicant uses the method pair of finite element analysis
The two is calculated respectively.In order to simplify operation, on the basis of ensureing that the two test philosophy is constant, chip carrier is had ignored
Apparatus structure below platform simplifies the structure of the two respectively, since the P faces current electrode thickness of the present invention only has
Several nanometers, and heat conductivility is also fabulous, and current electrode shadow caused by chip temperature in P faces can be ignored in calculating process
It rings.
As keep the two consistent as possible in device parameter setting：The size of chip carrier platform is consistent, the structure of chip
Unanimously, chip quantity of heat production is consistent.Since chip carrier platform of the present invention is insulating heat-conductive material, so the ceramic AlN used
Thermal conductivity is also less than existing apparatus material therefor (Cu), and the gross area of chip adsorption hole is more than existing apparatus, the two factors drop
It is low to chip cooling.But final calculation result but shows that the thermal diffusivity of the present invention is better than the prior art.It so can be pre-
Phase, if making chip carrier platform using the better material of the heat conductivilitys such as diamond, the effect of the present invention will have more into one
Step is obviously improved.
Design parameter is as follows：
It is 5e12W*m-3 to set heat production area quantity of heat production, and chip carrier platform underlaying surface temperature is 293K, N faces of the invention
Electrode top temperature is 293K, and the temperature of probe (P faces current electrode) upper surface of the prior art is 293K.
The structural parameters of 1 present invention of table
In addition, the minimum distance 0.4mm of the two neighboring vacuum absorption holes of the present invention, the short side of vacuum absorption holes is apart from carrier
The distance at edge is 0.4mm.
2 existing structure parameter of table
3 chip parameter to be measured of table
The operating procedure that chip testing is carried out using apparatus of the present invention is as follows：
1. chip to be measured is positioned over 4 surface of P faces current electrode, chip should be with P faces along the centre symmetry line of cavity length direction
The centre symmetry line of current electrode overlaps.
2. opening gas circuit hole 7, the air pressure in vacuum absorption holes is reduced, chip to be measured is made to be adsorbed in chip carrier platform table
Face.
3. moving down N faces current electrode 5, N faces current electrode 5 and N faces electrode is made just to completely attach to.
4. adjusting TEC temperature, automatically adjusted by the temperature measuring device feedback temperature being put into temperature test hole so that core
Piece carrier platform underlaying surface temperature reaches set temperature.
5. being injected separately into electric current from p side electrode connector 8, the output characteristics of each luminescence unit of chip to be measured is tested respectively.
6. after the completion of chip testing to be measured, N faces current electrode is moved up, turns off gas circuit hole, removes chip.
Claims (10)
1. a kind of semiconductor laser chip test fixing device, including chip carrier platform, vacuum absorption device, temperature control
Device, P faces current electrode and N faces current electrode, the lower surface of chip carrier platform are bonded with vacuum absorption device, the temperature
Control device is through vacuum absorption device to chip carrier platform heat loss through conduction；Chip carrier platform or vacuum absorption device are also set
It is equipped with temperature sensing hole；It is characterized in that：
The chip carrier platform is insulating heat-conductive material, is provided in the upper surface of chip carrier platform spaced a plurality of
Metal film, the length direction of metal film are parallel with the luminescence unit cavity length direction of chip to be measured；Each metal film is as one
Independent P faces current electrode, for fitting completely corresponding with the p side electrode of the single luminescence unit of chip to be measured, each metal
Individual electrical power contact head is accordingly fixed on film；The parallel vacuum suction for offering bar shaped between the current electrode of adjacent P faces
Hole, vacuum absorption holes penetrate through chip carrier platform upper and lower surface, all vacuum absorption holes with the interior gas of vacuum absorption device
Road duct communicates；Electrode of the N faces current electrode for an entirety, positioned at the top of P faces current electrode, and avoids accordingly supplying
Electrical contact head present position, the lower surface flat smooth of N faces current electrode can be complete with the N faces electrode of chip to be measured
Fitting.
2. semiconductor laser chip test fixing device according to claim 1, it is characterised in that：
The upper surface flat smooth of the chip carrier platform, a plurality of metal film are plated on the upper surface of chip carrier platform；
Alternatively, the position that the upper surface of the chip carrier platform corresponds to a plurality of metal film sets shallow slot, metal respectively
Film inserts the upper surface flat smooth that corresponding shallow slot causes chip carrier platform.
3. semiconductor laser chip test fixing device according to claim 1, it is characterised in that：The P faces power supply
The width of electrode is more than the width of the p side electrode of the single luminescence unit of chip to be measured, and length is more than chip light emitting unit to be measured
Chamber is long.
4. semiconductor laser chip test fixing device according to claim 3, it is characterised in that：The a plurality of metal
The width and spacing of film meet：Each luminescence unit of chip to be measured is powered along the centre symmetry line of cavity length direction with corresponding P faces
The centre symmetry line of electrode overlaps, and vacuum absorption holes correspond to the region between the adjacent p side electrode of chip to be measured, adjacent vacuum
The distance between adsorption hole is less than the width of luminescence unit.
5. semiconductor laser chip test fixing device according to claim 1, it is characterised in that：The P faces power supply
The effective length of electrode is more than the length of vacuum absorption holes, and corresponding electrical power contact head is beyond vacuum absorption holes in length direction
Upper corresponding region.
6. semiconductor laser chip test fixing device according to claim 1, it is characterised in that：The N faces power supply
Electrode covers all P faces current electrodes arranged on chip carrier platform in the longitudinal direction, and the width of N faces current electrode is small
In the length of vacuum absorption holes.
7. semiconductor laser chip test fixing device according to claim 6, it is characterised in that：The N faces power supply
The length direction of electrode and the length direction of P faces current electrode are mutually perpendicular to.
8. semiconductor laser chip test fixing device according to claim 1, it is characterised in that：The vacuum suction
The main body of device is a heat-conducting block, and the interior gas circuit duct is the strip groove opened up in the heat-conducting block upper surface, the bar shaped
The projection of groove and the vacuum absorption holes of bar shaped in the lower surface of chip carrier platform is mutually perpendicular to.
9. semiconductor laser chip test fixing device according to claim 1, it is characterised in that：The temperature sensing
Hole is opened in the side of vacuum absorption device, and the side is parallel with the length direction of vacuum absorption holes.
10. the operating method of semiconductor laser chip test fixing device, includes the following steps described in application claim 1：
(1) chip to be measured is positioned over to the upper surface of chip carrier platform, makes the p side electrode of each luminescence unit of chip to be measured
It is bonded completely with corresponding P faces current electrode, luminescence unit is along the centre symmetry line of cavity length direction and the center of P faces current electrode
Line of symmetry overlaps；
(2) vacuum absorption device works, and reduces the air pressure in vacuum absorption holes, chip to be measured is made to be adsorbed in chip carrier platform table
Face；
(3) N faces current electrode is moved down, N faces current electrode is made to be bonded completely with the N faces electrode of chip to be measured；
(4) temperature control equipment works, and is automatically adjusted by temperature sensing hole measurement and feedback temperature so that chip carrier
Platform underlaying surface temperature reaches set temperature；
(5) respectively to the electrical power contact head Injection Current of P faces current electrode, the output for testing each luminescence unit of chip to be measured is special
Property；
(6) after the completion of chip testing to be measured, N faces current electrode is moved up, vacuum absorption device is stopped, and removes core to be measured
Piece.
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| CN201511024063.1A CN105467291B (en) | 2015-12-30 | 2015-12-30 | A kind of semiconductor laser chip test fixing device and its method |
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| CN201511024063.1A CN105467291B (en) | 2015-12-30 | 2015-12-30 | A kind of semiconductor laser chip test fixing device and its method |
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| CN105467291B true CN105467291B (en) | 2018-06-26 |
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| CN106124958A (en) * | 2016-08-23 | 2016-11-16 | 西安炬光科技股份有限公司 | A kind of semiconductor laser chip test device |
| CN106841965A (en) * | 2016-12-16 | 2017-06-13 | 重庆航伟光电科技有限公司 | Semiconductor laser amplitude test device |
| CN108776242A (en) * | 2018-04-28 | 2018-11-09 | 深圳瑞波光电子有限公司 | A kind of measurement jig and device |
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| CN111707849B (en) * | 2020-08-18 | 2020-11-17 | 江西铭德半导体科技有限公司 | Device fixing device and semiconductor laser testing equipment |
| CN112161982A (en) * | 2020-09-04 | 2021-01-01 | 深圳瑞波光电子有限公司 | Detection jig and detection device |
| CN112161981A (en) * | 2020-09-04 | 2021-01-01 | 深圳瑞波光电子有限公司 | Detection jig and detection device |
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