CN105449318A - Phase shifter unit of BST material-filled coplanar waveguide structure and phase shifting method - Google Patents
Phase shifter unit of BST material-filled coplanar waveguide structure and phase shifting method Download PDFInfo
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- CN105449318A CN105449318A CN201510875741.9A CN201510875741A CN105449318A CN 105449318 A CN105449318 A CN 105449318A CN 201510875741 A CN201510875741 A CN 201510875741A CN 105449318 A CN105449318 A CN 105449318A
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- metal patch
- phase shifter
- bst material
- waveguide structure
- signal band
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/181—Phase-shifters using ferroelectric devices
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- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
The invention discloses a phase shifter unit of a BST material-filled coplanar waveguide structure and a phase shifting method. The phase shifter unit of the BST material-filled coplanar waveguide structure comprises a basic phase shifter unit of the coplanar waveguide structure and a BST material layer, wherein the basic phase shifter unit of the coplanar waveguide structure comprises a dielectric substrate, a signal band metal patch and two earth tape metal patches; the signal band metal patch is arranged at the center of the dielectric substrate while the two earth tape metal patches are arranged at two ends of the dielectric substrate respectively; the signal band metal patch is located between the two earth tape metal patches; and the BST material layer is arranged in a gap between the signal band metal patch and the earth tape metal patches and is arranged on the dielectric substrate. An effective dielectric constant of the phase shifter unit is changed by adding direct current feed to the BST material layer, so that the phase shifting function is achieved. According to the phase shifter unit of the BST material-filled coplanar waveguide structure, the volume of the phase shifter unit can be effectively reduced; the loss is reduced; and relatively good phase shift performance is provided within a relatively wide frequency range.
Description
Technical field
The present invention relates to a kind of design of filling the coplanar waveguide structure phase shifter element of BST material, belong to microwave device technology field.
Background technology
Along with radar, satellite, the fast development of the technology such as communication, the application of phased array antenna is increasingly extensive.Microwave phase shifter is as the core component of phased array antenna, and regulate microwave phase shifter, the PHASE DISTRIBUTION namely on adjustable antenna aperature, realizes the skyborne scanning of wave beam.The performance of phase shifter directly decides the working frequency range of T/R assembly, response speed, insertion loss, power, the important technology indexs such as volume weight.
Traditional phase shifter for microwave regime is mainly ferrite phase shifter and semiconductor PIN diode phase shifter, for ferrite phase shifter, although its loss is less, the insertion loss of general ferrite phase shifter is about 0.5dB, but it is slow to have response speed, is about 2-10 microsecond switching time, and complex manufacturing technology, a series of shortcomings such as volume is large, expensive; Compared with ferrite phase shifter, the volume of PIN diode phase shifter is little, relative to the weight of a few hectogram of ferrite structure, general just about 15 grams of diode phase shifter, and fast response time, be generally less than 1 microsecond, but loss larger in microwave frequency range limits its application, generally, for realizing 360 degree of phase shifts, loss all can be greater than 1dB.
In addition, along with the development of modern communication technology and Radar Technology, the requirement of the performance of phase shifter is improved day by day.The performance of single phase shifter element is as loss, volumes etc. sometimes can not meet the requirement of system, for a common phased array radar, required phase shifter element quantity is thousands of, and the deficiency therefore in phase shifter element performance will cause serious impact to overall system performance.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of coplanar waveguide structure phase shifter element and phase-moving method of filling BST material, it can reduce the volume of phase shifter element effectively, reduce the wastage, and better phase shift performance is provided in wider band limits.
Technical scheme: for achieving the above object, the technical solution used in the present invention is:
Fill a coplanar waveguide structure phase shifter element for BST material, comprise the basic phase shifter element of coplanar waveguide structure and BST material layer; The basic phase shifter element of described coplanar waveguide structure comprises medium substrate, signal band metal patch and two earth strip metal patches, described signal band metal patch is arranged on the centre of medium substrate, and two earth strip metal patches are separately positioned on the two ends of medium substrate, and described signal band metal patch is between two earth strip metal patches; Described BST material layer is arranged in the gap between signal band metal patch and earth strip metal patch, and is arranged on medium substrate.
Preferred: described signal band metal patch is close on medium substrate, and two earth strip metal patches are close on the two ends of medium substrate respectively, and BST material layer is close on medium substrate.
Preferred: two earth strip metal patches are respectively left earth strip metal patch and right earth strip metal patch, align with medium substrate left surface in the side that left earth strip metal patch deviates from mutually with signal band metal patch; Align with medium substrate right flank in the side that right earth strip metal patch deviates from mutually with signal band metal patch.
Preferred: described medium substrate is aluminum oxide ceramic medium substrate.Described BST material layer is Ba
0.5sr
0.5tiO
3ferroelectric material layer
Preferred: the thickness of described signal band metal patch, earth strip metal patch, BST material layer is all consistent.
Preferred: the ratio of the described width s of signal band metal patch and the width g of BST material layer is between 1/10 to 1/8.
Preferred: the thickness of described signal band metal patch, earth strip metal patch, BST material layer is 16-20 micron, and dielectric substrate thickness gets 450-550 micron; Signal band metal patch width 90-110 μm, BST material layer width 860-900 μm, earth strip metal patch width 300-340 μm.
Fill a phase-moving method for the coplanar waveguide structure of BST material, add by giving BST material layer the effective dielectric constant that DC feedback changes phase shifter element, thus reach the function of phase shift.
Preferred: to add longitudinal DC feedback in BST material layer upper and lower surface.
Fill a manufacture method for the coplanar waveguide structure phase shifter element of BST material, first signal band metal patch is pasted onto the centre of medium substrate, two earth strip metal patches are pasted onto on the two ends of medium substrate respectively; Then in the gap of signal band metal patch and earth strip metal patch, fill BST material, form BST material layer, and then obtain phase shifter element.
Beneficial effect: a kind of coplanar waveguide structure phase shifter element and phase-moving method of filling BST material provided by the invention, compared to existing technology, has following beneficial effect:
1, traditional ferrite phase shifter loss is little, but it is slow to have response speed, the shortcomings such as volume is large; PIN semiconductor phase shifter fast response time, but during high frequency, loss is too large.And the present invention uses the co-planar waveguide phase shifter element of filling BST material, have both advantages concurrently, volume is little, and loss is little, fast response time, nanosecond rank, and phase shift performance is more superior.
2, platinum or aluminium are selected mostly for traditional filling ferroelectric material coplanar waveguide structure phase shifter element metal.And the present invention selects metallic copper, when almost ensureing equal performance, phase shifter element cost being reduced and is more easy to processing.
3, for traditional filling ferroelectric material coplanar waveguide structure phase shifter element, ferroelectric material is all filled in medium substrate upper strata, and then sheet metal is placed on ferroelectric material.And ferroelectric material is placed in the gap of signal band and earth strip by the present invention, field due to coplanar waveguide structure is mainly strapped in the gap of signal band and earth strip, therefore, compared with traditional structure, the present invention can utilize the dielectric coefficient tunable performance of ferroelectric material more fully.
Accompanying drawing explanation
Fig. 1 is the coplanar waveguide structure phase shifter element structural representation that the present invention fills BST material;
Fig. 2 is the coplanar waveguide structure phase shifter element structure front view that the present invention fills BST material;
Fig. 3 is that the return loss of example of the present invention is with frequency variation curve figure;
Fig. 4 is the Phasing figure of example of the present invention.
Wherein, 1 is medium substrate, and 2 is signal band metal patch, and 3 is left earth strip metal patch, and 4 is right earth strip metal patch, and 5 is BST material layer.
Embodiment
Below in conjunction with the drawings and specific embodiments, illustrate the present invention further, these examples should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
Fill a coplanar waveguide structure phase shifter element for BST material, as depicted in figs. 1 and 2, comprise the basic phase shifter element of coplanar waveguide structure and BST (barium strontium titanate) material layer; The basic phase shifter element of described coplanar waveguide structure comprises medium substrate, signal band metal patch and two earth strip metal patches, described signal band metal patch is arranged on the centre of medium substrate, and two earth strip metal patches are separately positioned on the two ends of medium substrate, and described signal band metal patch is between two earth strip metal patches; Described BST material layer is arranged in the gap between signal band metal patch and earth strip metal patch, and is arranged on medium substrate.
Described signal band metal patch is close on medium substrate, and two earth strip metal patches are close on the two ends of medium substrate respectively, and BST material layer is close on medium substrate.
Two earth strip metal patches are respectively left earth strip metal patch and right earth strip metal patch, align with medium substrate left surface in the side that left earth strip metal patch deviates from mutually with signal band metal patch; Align with medium substrate right flank in the side that right earth strip metal patch deviates from mutually with signal band metal patch.
Described medium substrate is aluminum oxide ceramic medium substrate, and thickness is h.Described BST material layer is Ba
0.5sr
0.5tiO
3ferroelectric material layer.Metallic copper cheap and be convenient to make processing.In addition, aluminum oxide ceramic medium substrate and BST are all oxide, are beneficial to and reduce the wastage.
The thickness of described signal band metal patch, earth strip metal patch, BST material layer is all consistent.
The ratio of the described width s of signal band metal patch and the width g of BST material layer is between 1/10 to 1/8.
The thickness of described signal band metal patch, earth strip metal patch, BST material layer is 16-20 micron, and dielectric substrate thickness gets 450-550 micron; Signal band metal patch width 90-110 μm, BST material layer width 860-900 μm, earth strip metal patch width 300-340 μm.
Fill a phase-moving method for the coplanar waveguide structure of BST material, adding by giving BST material layer the effective dielectric constant that DC feedback changes phase shifter element, generally adding longitudinal DC feedback in BST material layer upper and lower surface.Thus reach the function of phase shift.
Fill a manufacture method for the coplanar waveguide structure phase shifter element of BST material, first signal band metal patch is pasted onto the centre of medium substrate, two earth strip metal patches are pasted onto on the two ends of medium substrate respectively; Then in the gap of signal band metal patch and earth strip metal patch, fill BST material, form BST material layer, and then obtain phase shifter element.
The barium strontium titanate material that this example is filled in signal band metal patch and earth strip metal patch gap is Ba
0.5sr
0.5tiO
3ferroelectric material, material is directly filled in above medium substrate, is close to medium substrate, and packing material height flushes with the height of metal patch, and width is g.Ba
0.5sr
0.5tiO
3curie temperature, close to room temperature, is applicable to the use under most of environment.
Consider and be convenient to processing, in this invention example, sheet metal and bst thin film thickness get 18 microns, and dielectric substrate thickness gets 500 microns.The parameter index of coplanar waveguide structure and the ratio of signal bandwidth degree and earth strip width have important relation.Found by emulation, in this invention, the ratio of signal bandwidth degree and gap width, namely when the value of s/g is 1, the port Impedance of phase shifter is 20 ohm, and when ratio is 1/9, port Impedance is 50 ohm, consider that the port Impedance of current most of microwave device is 50 ohm, in this invention, s/g value is about 1/9.Design parameter is: s=100 μm, g=880 μm, g
1=320 μm, phase shifter element length is 2mm.By changing the DC feedback size added by BST upper and lower surface, when making the dielectric constant of BST change to 700 from 300, phase shifter element can realize the phase shift of 75 degree.
As can be seen from Figure 3, in the band limits of about 20G, the insertion loss value stabilization of phase shifter element at below 0.7dB, and reduces along with the increase of BST dielectric constant; By Fig. 4, can find out on 20G frequency, when BST dielectric constant changes to 700 from 300, S
21phase place change to 87.5 ° from 162.5 °, namely phase shifter element achieves the phase shift of 75 °, and we be 2mm shift to element length under realize 75 ° shift to, i.e. 37.5 °/mm.
As known from the above, the present invention can change the dielectric constant of BST material by the DC feedback changed on bst thin film (BST material layer) and then change the effective dielectric constant of phase-shifting unit, thus reaches the effect of phase shift.The present invention not only size is little, can well realize the function of phase shift, and is filled with BST material between co-planar waveguide signal band and earth strip, can make full use of the character that BST dielectric is adjustable.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. fill a coplanar waveguide structure phase shifter element for BST material, it is characterized in that: comprise the basic phase shifter element of coplanar waveguide structure and BST material layer; The basic phase shifter element of described coplanar waveguide structure comprises medium substrate, signal band metal patch and two earth strip metal patches, described signal band metal patch is arranged on the centre of medium substrate, and two earth strip metal patches are separately positioned on the two ends of medium substrate, and described signal band metal patch is between two earth strip metal patches; Described BST material layer is arranged in the gap between signal band metal patch and earth strip metal patch, and is arranged on medium substrate.
2. the coplanar waveguide structure phase shifter element of filling BST material according to claim 1, it is characterized in that: described signal band metal patch is close on medium substrate, two earth strip metal patches are close on the two ends of medium substrate respectively, and BST material layer is close on medium substrate.
3. the coplanar waveguide structure phase shifter element of filling BST material according to claim 1, it is characterized in that: two earth strip metal patches are respectively left earth strip metal patch and right earth strip metal patch, align with medium substrate left surface in the side that left earth strip metal patch deviates from mutually with signal band metal patch; Align with medium substrate right flank in the side that right earth strip metal patch deviates from mutually with signal band metal patch.
4. the coplanar waveguide structure phase shifter element of filling BST material according to claim 1, is characterized in that: described medium substrate is aluminum oxide ceramic medium substrate; Described BST material layer is Ba
0.5sr
0.5tiO
3ferroelectric material layer.
5. the coplanar waveguide structure phase shifter element of filling BST material according to claim 1, is characterized in that: the thickness of described signal band metal patch, earth strip metal patch, BST material layer is all consistent.
6. the coplanar waveguide structure phase shifter element of filling BST material according to claim 1, is characterized in that: the ratio of the described width s of signal band metal patch and the width g of BST material layer is between 1/10 to 1/8.
7. the coplanar waveguide structure phase shifter element of filling BST material according to claim 1, is characterized in that: the thickness of described signal band metal patch, earth strip metal patch, BST material layer is 16-20 micron, and dielectric substrate thickness gets 450-550 micron; Signal band metal patch width 90-110 μm, BST material layer width 860-900 μm, earth strip metal patch width 300-340 μm.
8. based on a phase-moving method for the coplanar waveguide structure of the arbitrary described filling BST material of claim 1 to 7, it is characterized in that: by adding the effective dielectric constant that DC feedback changes phase shifter element to BST material layer, thus reach the function of phase shift.
9. the phase-moving method of the coplanar waveguide structure of filling BST material according to claim 8, is characterized in that: add longitudinal DC feedback in BST material layer upper and lower surface.
10. the manufacture method based on the coplanar waveguide structure phase shifter element of the arbitrary described filling BST material of claim 1 to 7, it is characterized in that: the centre first signal band metal patch being pasted onto medium substrate, two earth strip metal patches are pasted onto on the two ends of medium substrate respectively; Then in the gap of signal band metal patch and earth strip metal patch, fill BST material, form BST material layer, and then obtain phase shifter element.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510875741.9A CN105449318B (en) | 2015-12-03 | 2015-12-03 | A kind of the coplanar waveguide structure phase shifter element and phase-moving method of filling BST materials |
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|---|---|---|---|
| CN201510875741.9A CN105449318B (en) | 2015-12-03 | 2015-12-03 | A kind of the coplanar waveguide structure phase shifter element and phase-moving method of filling BST materials |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100096678A1 (en) * | 2008-10-20 | 2010-04-22 | University Of Dayton | Nanostructured barium strontium titanate (bst) thin-film varactors on sapphire |
| CN101950860A (en) * | 2010-10-25 | 2011-01-19 | 东南大学 | Modularized low-cost millimeter wave real-time imaging electronic scanning antenna system- |
| CN102593588A (en) * | 2011-11-21 | 2012-07-18 | 中国科学院合肥物质科学研究院 | Scanning end-fire array antenna based on boundary scan test (BST) film phase shifter |
-
2015
- 2015-12-03 CN CN201510875741.9A patent/CN105449318B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100096678A1 (en) * | 2008-10-20 | 2010-04-22 | University Of Dayton | Nanostructured barium strontium titanate (bst) thin-film varactors on sapphire |
| CN101950860A (en) * | 2010-10-25 | 2011-01-19 | 东南大学 | Modularized low-cost millimeter wave real-time imaging electronic scanning antenna system- |
| CN102593588A (en) * | 2011-11-21 | 2012-07-18 | 中国科学院合肥物质科学研究院 | Scanning end-fire array antenna based on boundary scan test (BST) film phase shifter |
Non-Patent Citations (2)
| Title |
|---|
| KI-BYOUNG KIM ETC.: "Integration of coplanar (Ba,Sr)TiO3 microwave phase shifters onto Si wafers TiO2 buffer layers", 《IEEE TRANSACTIONS ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL》 * |
| MINORU NODA ETC.: "Microwave Tunable Devices Composed of Coplanar Waveguide Line with (Ba0.6,Sr0.4)TiO3/Au/Cr/(Ba0.6,Sr0.4)TiO3 Sandwich Structure", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 * |
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