CN105449318A - Phase shifter unit of BST material-filled coplanar waveguide structure and phase shifting method - Google Patents
Phase shifter unit of BST material-filled coplanar waveguide structure and phase shifting method Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000010363 phase shift Effects 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 4
- 239000011224 oxide ceramic Substances 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 50
- 230000004044 response Effects 0.000 description 6
- 229910000859 α-Fe Inorganic materials 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
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- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000306 component Substances 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/181—Phase-shifters using ferroelectric devices
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Abstract
本发明公开了一种填充BST材料的共面波导结构移相器单元及移相方法，包括共面波导结构基本移相器单元和BST材料层；所述共面波导结构基本移相器单元包括介质基板、信号带金属贴片以及两个接地带金属贴片，所述信号带金属贴片设置在介质基板的正中央，而两个接地带金属贴片分别设置在介质基板的两端上，且所述信号带金属贴片位于两个接地带金属贴片之间；所述BST材料层设置于信号带金属贴片和接地带金属贴片之间的缝隙内，且设置在介质基板上。通过给BST材料层加直流馈电改变移相器单元的等效介电常数，从而达到移相的功能。本发明能够有效地减小移相器单元的体积，降低损耗，并在更宽的频段范围内提供更好的移相性能。
The invention discloses a coplanar waveguide structure phase shifter unit filled with BST material and a phase shifting method, comprising a coplanar waveguide structure basic phase shifter unit and a BST material layer; the coplanar waveguide structure basic phase shifter unit includes a dielectric substrate, a signal band metal patch, and two grounding strip metal patches, the signal strip metal patch is arranged in the center of the dielectric substrate, and the two grounding strip metal patches are respectively arranged on both ends of the dielectric substrate, And the signal strap metal patch is located between two ground strap metal patches; the BST material layer is arranged in the gap between the signal strap metal patch and the ground strap metal patch, and is arranged on the dielectric substrate. The phase shifting function is achieved by changing the equivalent dielectric constant of the phase shifter unit by adding DC feed to the BST material layer. The invention can effectively reduce the volume of the phase shifter unit, reduce loss, and provide better phase shift performance in a wider frequency range.
Description
技术领域technical field
本发明涉及一种填充BST材料的共面波导结构移相器单元的设计，属于微波器件技术领域。The invention relates to the design of a coplanar waveguide structure phase shifter unit filled with BST material, belonging to the technical field of microwave devices.
背景技术Background technique
随着雷达，卫星，通讯等技术的迅猛发展，相控阵天线的应用日益广泛。微波移相器作为相控阵天线的核心部件，调节微波移相器，即可调整天线孔径上的相位分布，实现波束在空中的扫描。移相器的性能直接决定着T/R组件的工作频段，响应速度，插入损耗，功率，体积重量等重要技术指标。With the rapid development of radar, satellite, communication and other technologies, the application of phased array antenna is becoming more and more extensive. The microwave phase shifter is the core component of the phased array antenna. By adjusting the microwave phase shifter, the phase distribution on the antenna aperture can be adjusted to realize the scanning of the beam in the air. The performance of the phase shifter directly determines the important technical indicators such as the working frequency band, response speed, insertion loss, power, volume and weight of the T/R component.
传统的用于微波领域的移相器主要为铁氧体移相器和半导体PIN二极管移相器，对于铁氧体移相器而言，尽管其损耗较小，一般铁氧体移相器的插入损耗约为0.5dB,但具有响应速度慢，开关时间约为2-10微秒，而且制作工艺复杂，体积大，价格昂贵等一系列缺点；与铁氧体移相器相比，PIN二极管移相器的体积小，相对于铁氧体结构几百克的重量，二极管移相器一般才15克左右，而且响应速度快，一般小于1微秒，但在微波频率范围内较大的损耗限制了其应用，一般情况下，为实现360度相移，损耗都会大于1dB。Traditional phase shifters used in the microwave field are mainly ferrite phase shifters and semiconductor PIN diode phase shifters. For ferrite phase shifters, although their losses are small, the general ferrite phase shifters The insertion loss is about 0.5dB, but it has a series of shortcomings such as slow response speed, switching time of about 2-10 microseconds, complex manufacturing process, large volume, and high price; compared with ferrite phase shifters, PIN diodes The volume of the phase shifter is small. Compared with the weight of several hundred grams of the ferrite structure, the diode phase shifter is generally only about 15 grams, and the response speed is fast, generally less than 1 microsecond, but the loss is relatively large in the microwave frequency range. Its application is limited. In general, in order to achieve a 360-degree phase shift, the loss will be greater than 1dB.
另外，随着现代通信技术和雷达技术的不断发展，对移相器的性能的要求日益提高。单个移相器单元的性能如损耗，体积等有时候不能满足系统的要求，对于一个普通的相控阵雷达，所需的移相器单元数量成千上万，因此移相器单元性能上的不足将会对整体系统性能造成严重的影响。In addition, with the continuous development of modern communication technology and radar technology, the requirements for the performance of the phase shifter are increasing day by day. The performance of a single phase shifter unit such as loss, volume, etc. sometimes cannot meet the requirements of the system. For an ordinary phased array radar, the number of phase shifter units required is tens of thousands, so the performance of the phase shifter unit is limited. Insufficiency will have a severe impact on overall system performance.
发明内容Contents of the invention
发明目的：为了克服现有技术中存在的不足，本发明提供一种填充BST材料的共面波导结构移相器单元及移相方法，其能够有效地减小移相器单元的体积，降低损耗，并在更宽的频段范围内提供更好的移相性能。Purpose of the invention: In order to overcome the deficiencies in the prior art, the present invention provides a coplanar waveguide structure phase shifter unit filled with BST material and a phase shifting method, which can effectively reduce the volume of the phase shifter unit and reduce loss , and provide better phase shift performance in a wider frequency range.
技术方案：为实现上述目的，本发明采用的技术方案为：Technical scheme: in order to achieve the above object, the technical scheme adopted in the present invention is:
一种填充BST材料的共面波导结构移相器单元，包括共面波导结构基本移相器单元和BST材料层；所述共面波导结构基本移相器单元包括介质基板、信号带金属贴片以及两个接地带金属贴片，所述信号带金属贴片设置在介质基板的正中央，而两个接地带金属贴片分别设置在介质基板的两端上，且所述信号带金属贴片位于两个接地带金属贴片之间；所述BST材料层设置于信号带金属贴片和接地带金属贴片之间的缝隙内，且设置在介质基板上。A coplanar waveguide structure phase shifter unit filled with BST material, comprising a coplanar waveguide structure basic phase shifter unit and a BST material layer; the coplanar waveguide structure basic phase shifter unit includes a dielectric substrate, a signal band metal patch And two ground strap metal patches, the signal strap metal patch is arranged in the center of the dielectric substrate, and the two ground strap metal patches are respectively arranged on both ends of the dielectric substrate, and the signal strap metal patch It is located between two ground strap metal patches; the BST material layer is arranged in the gap between the signal strap metal patch and the ground strap metal patch, and is arranged on the dielectric substrate.
优选的：所述信号带金属贴片紧贴在介质基板上，两个接地带金属贴片分别紧贴在介质基板的两端上，BST材料层紧贴在介质基板上。Preferably: the metal patch of the signal band is closely attached to the dielectric substrate, the two metal patches of the grounding strip are respectively attached to both ends of the dielectric substrate, and the BST material layer is closely attached to the dielectric substrate.
优选的：两个接地带金属贴片分别为左接地带金属贴片和右接地带金属贴片，左接地带金属贴片与信号带金属贴片相背离的侧面与介质基板左侧面对齐；右接地带金属贴片与信号带金属贴片相背离的侧面与介质基板右侧面对齐。Preferably: the two ground strap metal patches are respectively the left ground strap metal patch and the right ground strap metal patch, and the side of the left ground strap metal patch and the signal strap metal patch away from is aligned with the left side of the dielectric substrate ; The side of the metal patch of the right ground strap and the metal patch of the signal strap that is away from is aligned with the right side of the dielectric substrate.
优选的：所述介质基板为三氧化二铝陶瓷介质基板。所述BST材料层为Ba0.5Sr0.5TiO3铁电材料层Preferably: the dielectric substrate is an aluminum oxide ceramic dielectric substrate. The BST material layer is a Ba 0.5 Sr 0.5 TiO 3 ferroelectric material layer
优选的：所述信号带金属贴片、接地带金属贴片、BST材料层的厚度均一致。Preferably: the thicknesses of the signal strip metal patch, the ground strip metal patch, and the BST material layer are all the same.
优选的：所述信号带金属贴片的宽度s与BST材料层的宽度g的比值在1/10到1/8之间。Preferably: the ratio of the width s of the signal strip metal patch to the width g of the BST material layer is between 1/10 and 1/8.
优选的：所述信号带金属贴片、接地带金属贴片、BST材料层的厚度为16-20微米，介质基板厚度取450-550微米；信号带金属贴片宽度90-110μm，BST材料层宽度860-900μm，接地带金属贴片宽度300-340μm。Preferably: the metal patch of the signal band, the metal patch of the grounding band, and the thickness of the BST material layer are 16-20 microns, and the thickness of the dielectric substrate is 450-550 microns; the width of the metal patch of the signal band is 90-110 μm, and the BST material layer The width is 860-900μm, and the width of the ground strap metal patch is 300-340μm.
一种填充BST材料的共面波导结构的移相方法，通过给BST材料层加直流馈电改变移相器单元的等效介电常数，从而达到移相的功能。A phase-shifting method of a coplanar waveguide structure filled with BST material, by adding DC feed to the BST material layer to change the equivalent dielectric constant of the phase-shifter unit, so as to achieve the phase-shifting function.
优选的：在BST材料层上下表面加纵向直流馈电。Preferably: add vertical direct current feed to the upper and lower surfaces of the BST material layer.
一种填充BST材料的共面波导结构移相器单元的制作方法，首先将信号带金属贴片粘贴在介质基板的正中央，将两个接地带金属贴片分别粘贴在介质基板的两端上；然后在信号带金属贴片与接地带金属贴片的缝隙内填充BST材料，形成BST材料层，进而得到移相器单元。A method for manufacturing a coplanar waveguide structure phase shifter unit filled with BST material. Firstly, a metal patch with a signal band is pasted on the center of a dielectric substrate, and two metal patches with grounding strips are respectively pasted on both ends of the dielectric substrate. ; Then fill the gap between the signal band metal patch and the ground band metal patch with BST material to form a BST material layer, and then obtain a phase shifter unit.
有益效果：本发明提供的一种填充BST材料的共面波导结构移相器单元及移相方法，相比现有技术，具有以下有益效果：Beneficial effects: Compared with the prior art, a coplanar waveguide structure phase shifter unit and a phase shifting method filled with BST materials provided by the present invention have the following beneficial effects:
1、传统的铁氧体移相器损耗小，但具有响应速度慢，体积大等缺点；PIN半导体移相器响应速度快，但高频时损耗太大。而本发明使用填充BST材料的共面波导移相器单元，兼具两者的优点，体积小，损耗小，响应速度快，纳秒级别，并且移相性能更优越。1. The traditional ferrite phase shifter has small loss, but has the disadvantages of slow response speed and large volume; PIN semiconductor phase shifter has fast response speed, but the loss is too large at high frequency. However, the present invention uses the coplanar waveguide phase shifter unit filled with BST material, which has the advantages of both, small size, low loss, fast response speed, nanosecond level, and superior phase shift performance.
2、对于传统的填充铁电材料共面波导结构移相器单元金属大多选用铂金或铝。而本发明选用金属铜，在几乎保证同等性能的情况下，使得移相器单元成本降低并且更加易于加工。2. For the traditional coplanar waveguide structure phase shifter unit metal filled with ferroelectric materials, platinum or aluminum is mostly used. However, the present invention uses metal copper to reduce the cost of the phase shifter unit and make it easier to process under the condition that almost the same performance is guaranteed.
3、对于传统的填充铁电材料共面波导结构移相器单元，铁电材料都填充在介质基板上层，然后金属片置于铁电材料上。而本发明将铁电材料置于信号带和接地带的缝隙中，由于共面波导结构的场主要束缚在信号带和接地带的缝隙中，因此与传统结构相比，本发明能更加充分的利用铁电材料的介电系数可调性能。3. For the traditional coplanar waveguide phase shifter unit filled with ferroelectric material, the ferroelectric material is filled on the upper layer of the dielectric substrate, and then the metal sheet is placed on the ferroelectric material. However, the present invention places the ferroelectric material in the gap between the signal band and the ground band, since the field of the coplanar waveguide structure is mainly bound in the gap between the signal band and the ground band, so compared with the traditional structure, the present invention can more fully Utilize the tunable performance of dielectric coefficient of ferroelectric materials.
附图说明Description of drawings
图1为本发明填充BST材料的共面波导结构移相器单元结构示意图；Fig. 1 is the structural schematic diagram of the coplanar waveguide structure phase shifter unit of filling BST material of the present invention;
图2为本发明填充BST材料的共面波导结构移相器单元结构正视图；Fig. 2 is the front view of the unit structure of the coplanar waveguide structure phase shifter filled with BST material in the present invention;
图3为本发明实例的回波损耗随频率变化曲线图；Fig. 3 is the return loss curve graph of the example of the present invention with frequency;
图4为本发明实例的移相效果图。Fig. 4 is a phase shift effect diagram of an example of the present invention.
其中，1为介质基板，2为信号带金属贴片，3为左接地带金属贴片，4为右接地带金属贴片，5为BST材料层。Among them, 1 is a dielectric substrate, 2 is a metal patch with a signal belt, 3 is a metal patch with a left ground belt, 4 is a metal patch with a right ground belt, and 5 is a BST material layer.
具体实施方式detailed description
下面结合附图和具体实施例，进一步阐明本发明，应理解这些实例仅用于说明本发明而不用于限制本发明的范围，在阅读了本发明之后，本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。Below in conjunction with accompanying drawing and specific embodiment, further illustrate the present invention, should be understood that these examples are only for illustrating the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand various aspects of the present invention All modifications of the valence form fall within the scope defined by the appended claims of the present application.
一种填充BST材料的共面波导结构移相器单元，如图1和图2所示，包括共面波导结构基本移相器单元和BST(钛酸锶钡)材料层；所述共面波导结构基本移相器单元包括介质基板、信号带金属贴片以及两个接地带金属贴片，所述信号带金属贴片设置在介质基板的正中央，而两个接地带金属贴片分别设置在介质基板的两端上，且所述信号带金属贴片位于两个接地带金属贴片之间；所述BST材料层设置于信号带金属贴片和接地带金属贴片之间的缝隙内，且设置在介质基板上。A coplanar waveguide structure phase shifter unit filled with BST material, as shown in Figure 1 and Figure 2, comprises a coplanar waveguide structure basic phase shifter unit and a BST (barium strontium titanate) material layer; the coplanar waveguide The basic structure of the phase shifter unit includes a dielectric substrate, a signal strap metal patch and two ground strap metal patches, the signal strap metal patch is set in the center of the dielectric substrate, and the two ground strap metal patches are respectively set On both ends of the dielectric substrate, and the signal strip metal patch is located between two ground strip metal patches; the BST material layer is arranged in the gap between the signal strip metal patch and the ground strip metal patch, And it is arranged on the dielectric substrate.
所述信号带金属贴片紧贴在介质基板上，两个接地带金属贴片分别紧贴在介质基板的两端上，BST材料层紧贴在介质基板上。The metal patch of the signal band is closely attached to the dielectric substrate, the two metal patches of the grounding strip are respectively attached to both ends of the dielectric substrate, and the BST material layer is closely attached to the dielectric substrate.
两个接地带金属贴片分别为左接地带金属贴片和右接地带金属贴片，左接地带金属贴片与信号带金属贴片相背离的侧面与介质基板左侧面对齐；右接地带金属贴片与信号带金属贴片相背离的侧面与介质基板右侧面对齐。The two ground strap metal patches are the left ground strap metal patch and the right ground strap metal patch respectively. The side of the strip metal patch that is away from the signal strip metal patch is aligned with the right side of the dielectric substrate.
所述介质基板为三氧化二铝陶瓷介质基板，厚度为h。所述BST材料层为Ba0.5Sr0.5TiO3铁电材料层。金属铜价格低廉并且便于制作加工。另外，三氧化二铝陶瓷介质基板和BST同为氧化物，利于降低损耗。The dielectric substrate is an aluminum oxide ceramic dielectric substrate with a thickness h. The BST material layer is a Ba 0.5 Sr 0.5 TiO 3 ferroelectric material layer. Copper metal is cheap and easy to manufacture and process. In addition, the aluminum oxide ceramic dielectric substrate and BST are both oxides, which is beneficial to reduce loss.
所述信号带金属贴片、接地带金属贴片、BST材料层的厚度均一致。The thicknesses of the signal strip metal patch, the ground strip metal patch, and the BST material layer are all the same.
所述信号带金属贴片的宽度s与BST材料层的宽度g的比值在1/10到1/8之间。The ratio of the width s of the signal strip metal patch to the width g of the BST material layer is between 1/10 and 1/8.
所述信号带金属贴片、接地带金属贴片、BST材料层的厚度为16-20微米，介质基板厚度取450-550微米；信号带金属贴片宽度90-110μm，BST材料层宽度860-900μm，接地带金属贴片宽度300-340μm。The metal patch of the signal band, the metal patch of the grounding band, and the thickness of the BST material layer are 16-20 microns, and the thickness of the dielectric substrate is 450-550 microns; the width of the metal patch of the signal band is 90-110 μm, and the width of the BST material layer is 860- 900μm, the width of the metal patch of the grounding strap is 300-340μm.
一种填充BST材料的共面波导结构的移相方法，通过给BST材料层加直流馈电改变移相器单元的等效介电常数，一般在BST材料层上下表面加纵向直流馈电。从而达到移相的功能。A phase-shifting method of a coplanar waveguide structure filled with BST material, which changes the equivalent dielectric constant of the phase shifter unit by adding DC feed to the BST material layer, generally adding vertical DC feed to the upper and lower surfaces of the BST material layer. So as to achieve the function of phase shifting.
一种填充BST材料的共面波导结构移相器单元的制作方法，首先将信号带金属贴片粘贴在介质基板的正中央，将两个接地带金属贴片分别粘贴在介质基板的两端上；然后在信号带金属贴片与接地带金属贴片的缝隙内填充BST材料，形成BST材料层，进而得到移相器单元。A method for manufacturing a coplanar waveguide structure phase shifter unit filled with BST material. Firstly, a metal patch with a signal band is pasted on the center of a dielectric substrate, and two metal patches with grounding strips are respectively pasted on both ends of the dielectric substrate. ; Then fill the gap between the signal band metal patch and the ground band metal patch with BST material to form a BST material layer, and then obtain a phase shifter unit.
本例在信号带金属贴片和接地带金属贴片缝隙中填充的钛酸锶钡材料为Ba0.5Sr0.5TiO3铁电材料，材料直接填充在介质基板上方，紧贴介质基板，填充材料高度与金属贴片的高度齐平,宽度为g。Ba0.5Sr0.5TiO3居里温度接近室温，适合大多数环境下的使用。In this example, the barium strontium titanate material filled in the gap between the metal patch of the signal band and the metal patch of the grounding band is Ba 0.5 Sr 0.5 TiO 3 ferroelectric material. It is flush with the height of the metal patch and the width is g. The Curie temperature of Ba 0.5 Sr 0.5 TiO 3 is close to room temperature, which is suitable for use in most environments.
考虑到便于加工，此发明实例中金属片和BST薄膜厚度取18微米，介质基板厚度取500微米。共面波导结构的参数指标和信号带宽度和接地带宽度的比值有着重要的关系。通过仿真发现，在此发明中，信号带宽度和缝隙宽度之比，即s/g的值为1时，移相器的端口阻抗为20欧姆，当比值为1/9时，端口阻抗为50欧姆，考虑到目前大多数微波器件的端口阻抗为50欧姆，此发明中s/g值约为1/9。具体参数为：s＝100μm,g＝880μm,g1＝320μm，移相器单元长度为2mm。通过改变BST上下表面所加的直流馈电大小，使得BST的介电常数从300变化到700时，移相器单元能实现75度的相移。Considering the convenience of processing, the thickness of the metal sheet and the BST film in this invention example is 18 microns, and the thickness of the dielectric substrate is 500 microns. The parameter index of the coplanar waveguide structure has an important relationship with the ratio of the signal strip width to the ground strip width. It is found through simulation that in this invention, when the ratio of the signal bandwidth to the slot width, that is, when the value of s/g is 1, the port impedance of the phase shifter is 20 ohms, and when the ratio is 1/9, the port impedance is 50 Ohm, considering that the port impedance of most current microwave devices is 50 ohms, the s/g value in this invention is about 1/9. The specific parameters are: s=100 μm, g=880 μm, g 1 =320 μm, and the length of the phase shifter unit is 2 mm. By changing the magnitude of the DC feed applied to the upper and lower surfaces of the BST, the phase shifter unit can achieve a phase shift of 75 degrees when the dielectric constant of the BST is changed from 300 to 700.
从图3可以看出，在20G左右的频段范围内，移相器单元的插入损耗值稳定在0.7dB以下，并随着BST介电常数的增加而减小；通过图4，可以看出在20G频点上，当BST介电常数从300变化到700时，S21的相位从162.5°变化到87.5°，即移相器单元实现了75°的相移，而且我们是在2mm的移向单元长度下实现的75°移向，即37.5°/mm。It can be seen from Figure 3 that in the frequency range of about 20G, the insertion loss value of the phase shifter unit is stable below 0.7dB, and decreases with the increase of the BST dielectric constant; through Figure 4, it can be seen that in the At the 20G frequency point, when the BST dielectric constant changes from 300 to 700, the phase of S 21 changes from 162.5° to 87.5°, that is, the phase shifter unit achieves a phase shift of 75°, and we are shifting at 2mm The 75° movement achieved under the unit length is 37.5°/mm.
由以上可知，本发明通过改变BST薄膜(BST材料层)上的直流馈电可以改变BST材料的介电常数进而改变移相单元的等效介电常数，从而达到移相的效果。本发明不仅尺寸小，可以很好的实现移相的功能，而且在共面波导信号带和接地带之间填充了BST材料，可以充分利用BST介电可调的性质。It can be known from the above that the present invention can change the dielectric constant of the BST material by changing the DC feed on the BST film (BST material layer), and then change the equivalent dielectric constant of the phase shifting unit, thereby achieving the effect of phase shifting. The invention not only has a small size and can well realize the function of phase shifting, but also fills the BST material between the coplanar waveguide signal strip and the ground strip, and can fully utilize the adjustable property of the BST dielectric.
以上所述仅是本发明的优选实施方式，应当指出：对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above is only a preferred embodiment of the present invention, it should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, some improvements and modifications can also be made, and these improvements and modifications are also possible. It should be regarded as the protection scope of the present invention.
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| CN102593588A (en) * | 2011-11-21 | 2012-07-18 | 中国科学院合肥物质科学研究院 | Scanning end-fire array antenna based on boundary scan test (BST) film phase shifter |
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