CN105449089A - Inorganic epitaxy LED display module and manufacturing method thereof - Google Patents
Inorganic epitaxy LED display module and manufacturing method thereof Download PDFInfo
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- CN105449089A CN105449089A CN201410386512.6A CN201410386512A CN105449089A CN 105449089 A CN105449089 A CN 105449089A CN 201410386512 A CN201410386512 A CN 201410386512A CN 105449089 A CN105449089 A CN 105449089A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000407 epitaxy Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 238000005507 spraying Methods 0.000 claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 10
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 230000006978 adaptation Effects 0.000 claims abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000003292 glue Substances 0.000 claims abstract description 4
- 239000004575 stone Substances 0.000 claims description 47
- 239000010410 layer Substances 0.000 claims description 19
- 238000004806 packaging method and process Methods 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 2
- 229910052682 stishovite Inorganic materials 0.000 abstract description 2
- 229910052905 tridymite Inorganic materials 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 5
- 230000017525 heat dissipation Effects 0.000 abstract 2
- 238000001035 drying Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L2224/20—Structure, shape, material or disposition of high density interconnect preforms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73267—Layer and HDI connectors
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- Led Device Packages (AREA)
Abstract
The invention relates to an inorganic epitaxy LED display module and a manufacturing method thereof. The method includes the following steps of: performing epitaxial growth on LED wafers on a crystal lattice adaptation layer on the upper surface of an LED inorganic circuit board; performing graphical etching to remove an SiO2 protection layer on the bottom layer of the LED inorganic circuit board to expose a contact electrode; electrically connecting an application specific integrated circuit chip and the LED wafers through the contactor electrode; arranging an interface device on the lower surface of the LED inorganic circuit board; spraying the lower surface of the LED inorganic circuit board with heat dissipation glue, attaching a wafer support to the lower surface of the LED inorganic circuit board, and arranging a heat dissipation cover plate on the lower surface of the LED inorganic circuit board; spraying transparent ceramic glaze with light emission surfaces of the LED wafers and attaching protection films with optical lattice structures to the light emission surfaces; and drying and solidifying the LED wafers to obtain the inorganic epitaxy LED display module.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of inorganic brilliant LED of heap of stone and show module.
Background technology
The application of semiconductor light-emitting-diode (LED, LightEmittingDiode) has jumbo expansion in this year, and wherein, the market of the most potentiality at the soonest of growing up is backlight application of LCDs (LCD).Between several years, the backlight application of white light-emitting diode along with small display screen is general gradually, and the color liquid crystal panel in current nearly all mobile phone all provides backlight by light-emitting diode.Recently, white light-emitting diode more starts to march toward needs the laptop display screen backlight of more high-performance and longer operating time to apply.But light-emitting diode is entering large scale display screen, as not smooth on the road of PC display screen and TV applications.This situation is because except more best performance and longer off-the-job, large-scale liquid crystal panel needs to use as red, green, blue (RGB) this kind of light-emitting diode (LED) creates abundanter Color Range, just can provide and better purchase inducement than use Cold Cathode Fluorescent fluorescent tube (CCFL) backlight.
But there is bottleneck in high density field in traditional LED Display Technique.Because be limited by the traditional structure of LED light source, be limited by the material structure involved by module of rear integrated processing simultaneously, the driving capacity of for example traditional constant-current source encapsulation and structure, the thermal stability problems of the integrated finished product that the loose material of traditional FR4PCB plate is brought and evenness strength problem, and be spliced into injection moulding face shield required for large-screen for installing and mould shell etc., these all seriously limit LED Display Technique in high density field, are particularly less than breakthrough in 1.0mm display and application at pel spacing.Meanwhile, how simplifying LED to greatest extent and show the complex of product integrated manufacturing technology and scattered property, for user provides a kind of LED of low cost to show module, is also the bottleneck that the current LED Display Technique of restriction further develops.
Summary of the invention
The object of this invention is to provide a kind of inorganic brilliant LED of heap of stone and show module and manufacture method thereof, compare traditional LED and show module, its preparation technology is simple, has better performance unicity.
First aspect, embodiments provides the manufacture method that a kind of inorganic brilliant LED of heap of stone shows module, comprising:
Crystals growth LED wafer of heap of stone in the lattice adaptation layer of the upper surface of LED inorganic circuit plate;
Graphical etching removes the SiO of LED inorganic circuit plate bottom
2protective layer, exposes contact electrode;
By described contact electrode, dedicated IC chip is electrically connected with described LED wafer;
Tin interface arrangement is held at the lower surface of described LED inorganic circuit plate;
In the lower surface spraying thermal paste of described LED inorganic circuit plate, attachment chip support, and heat-dissipating cover plate is installed;
The diaphragm with optical grating structure is also mounted at the exiting surface spraying transparent ceramic glaze of the LED wafer of the upper surface of described LED inorganic circuit plate;
Namely obtain described inorganic brilliant LED of heap of stone after baking and curing and show module.
Preferably, the mode of described electrical connection comprises employing AuSn alloy and welds, or, adopt anisotropy conductiving glue to glued joint.
Preferably, described interface arrangement comprises USB terminal; In the lower surface spraying thermal paste of described LED inorganic circuit plate, attachment chip support, and before installing heat-dissipating cover plate, described method also comprises:
By described USB terminal input test signal, the described LED inorganic circuit plate being equipped with described dedicated IC chip and growth LED wafer is tested.
Second aspect, embodiments provides inorganic brilliant LED of heap of stone and shows module, comprising: LED epitaxial growth inorganic circuit plate, chip support, interface arrangement, dedicated IC chip, heat dissipating layer and heat-dissipating cover plate;
Described LED epitaxial growth inorganic circuit plate top is exiting surface, there is the LED of directly crystals growth of heap of stone, described LED epitaxial growth inorganic circuit plate top is upwards arranged in described chip support, described dedicated IC chip upside-down mounting is arranged at the bottom surface of described base plate for packaging, is fixed in described chip support by described heat dissipating layer and described heat-dissipating cover plate; Described interface arrangement is arranged in the chip support between the bottom surface of described base plate for packaging and described heat-dissipating cover plate, and is exposed by the outward opening that described heat-dissipating cover plate has;
Described LED epitaxial growth inorganic circuit plate is electrically connected with described dedicated IC chip; Described base plate for packaging is electrically connected with external circuit by described interface arrangement.
Preferably, described inorganic brilliant LED display module of heap of stone also comprises:
Ceramic glaze layer, is arranged on the top exiting surface of described LED epitaxial growth inorganic circuit plate, for strengthening the heat dispersion of LED epitaxial growth inorganic circuit onboard led.
Preferably, described inorganic brilliant LED display module of heap of stone also comprises:
Diaphragm, has optical grating structure, is covered on described ceramic glaze layer.
Preferably, described inorganic brilliant LED display module of heap of stone also comprises:
Fixture, described heat-dissipating cover plate is anchored on described chip support by described fixture.
Preferably, described interface arrangement is the USB interface of compatible power supply and data communication, is connected with described base plate for packaging by cementing or welding.
Preferably, the LED of crystals growth is directly built at described LED epitaxial growth inorganic circuit plate top is monochromatic LED or multi-colored led.
Further preferred, describedly multi-colored ledly to comprise: multiple red LED, multiple green LED and multiple blue led;
Wherein, a red LED, a green LED and a blue led form one group of wafer cell, and are equally spaced between the described wafer cell of many groups.
The inorganic of heap of stone brilliant LED that the embodiment of the present invention provides shows module and manufacture method thereof, and its LED epitaxial growth inorganic circuit plate top has the LED of directly crystals growth of heap of stone, and compare traditional LED and show module, its preparation technology is simple, has better performance unicity.
Accompanying drawing explanation
The profile of the inorganic of heap of stone brilliant LED display module that Fig. 1 provides for the embodiment of the present invention;
The front view of the inorganic of heap of stone brilliant LED display module that Fig. 2 provides for the embodiment of the present invention;
The rearview of the inorganic of heap of stone brilliant LED display module that Fig. 3 provides for the embodiment of the present invention;
The manufacture method flow chart of the inorganic of heap of stone brilliant LED display module that Fig. 4 provides for the embodiment of the present invention.
Embodiment
Inorganic brilliant LED of heap of stone provided by the invention shows module, is mainly used in LED display, Ultra fine pitch LED display, super-high density LED display, the positive luminous TV of LED, the positive luminous monitor of LED, LED video wall, LED indicates, the display floater manufacture in the fields such as LED special lighting.
The embodiment of the present invention one provides a kind of inorganic brilliant LED of heap of stone and shows module.The profile of the inorganic of heap of stone brilliant LED display module that Fig. 1 provides for the embodiment of the present invention.As shown in Figure 1, LED display module comprises: LED epitaxial growth inorganic circuit plate 4, chip support 3, interface arrangement 6, dedicated IC chip 9, heat dissipating layer 8 and heat-dissipating cover plate 10;
LED epitaxial growth inorganic circuit plate 4 is arranged on chip support 3, and its upper surface has the LED of directly crystals growth of heap of stone.Ceramic glaze layer 2 is coated with, for strengthening the heat dispersion of LED epitaxial growth inorganic circuit plate 4 on the P type LED material layer (illustrate with P-GaN in figure, according to different LED color needs, the LED of different materials can be adopted) of upper surface; Dedicated IC chip 9 upside-down mounting is arranged at the bottom surface of base plate for packaging 4, by BGA technique or utilize adhesive layer technique to be connected with the contact electrode 41 of LED epitaxial growth inorganic circuit plate 4, and dedicated IC chip 9 is assisted to dispel the heat by heat dissipating layer 8 and heat-dissipating cover plate 10; Interface arrangement 6 is arranged in the chip support 3 between the bottom surface of base plate for packaging 4 and heat-dissipating cover plate 10, and by opening 101 that heat-dissipating cover plate 10 has to exposing outside.
LED epitaxial growth inorganic circuit plate 4 is electrically connected with external circuit by interface arrangement 6.Interface arrangement 6 can be the USB interface of standard USB interface or compatible power supply and data communication.Interface arrangement 6 is connected with LED epitaxial growth inorganic circuit plate 4 by cementing or tin welding.There is the electric connection line (not shown) connecting external circuit, such as electric wire, contact pin or the other forms of electric connection line for being electrically connected in interface arrangement 6.LED epitaxial growth inorganic circuit plate 4 is connected with the electric connection line in interface arrangement 6 with dedicated IC chip 9, thus realizes the electrical connection with external circuit.
Also have heat dissipating layer 8 between heat-dissipating cover plate 10 and dedicated IC chip 9, preferably, heat dissipating layer 8 is made for silicon thermal paste; Heat-dissipating cover plate 10 is aluminium cover plate.
The inorganic of heap of stone brilliant LED of the present embodiment shows module and also comprises fixture 7, and this fixture 7 can be that magnetic installs inserts, and the installation inserts of other modes can certainly be adopted as fixture 7.Heat-dissipating cover plate 10 is anchored on chip support 3 by fixture 7.
The inorganic of heap of stone brilliant LED of the present embodiment shows module and also comprises diaphragm 1, is covered on ceramic glaze layer 2.Protection mould 1 preferably has the diaphragm of optical grating function concurrently.
In addition, the LED of crystals growth is directly built at described LED epitaxial growth inorganic circuit plate 4 top is monochromatic LED or multi-colored led.Wherein multi-colored ledly can comprise three looks, four looks or any multiple color LED.
For conventional RGB (RGB) LED, multi-colored ledly to comprise: multiple red LED, multiple green LED and multiple blue led; Wherein, a red LED, a green LED and a blue led form one group of wafer cell.For ensureing display effect, just setting before crystals growth of heap of stone is equally spaced between the described wafer cell of many groups.
Module is shown at the above-mentioned inorganic brilliant LED of heap of stone of integrated the present invention, first LED inorganic circuit plate 4 is buried casting on chip support 3, weld with drive plate 9 again, after electrical detection confirms, silicon-coating thermal paste in the discrete component one side of drive plate 9, form heat dissipating layer 8, heat-dissipating cover plate 10 is pasted in above-mentioned silicon thermal paste.Finally, after said modules is clean, the diaphragm 1 having optical grating function concurrently is sticked at the upper surface of LED inorganic circuit plate 4.The front view of the inorganic of heap of stone brilliant LED display module after integrated and rearview are respectively as shown in Figure 2 and Figure 3.
The inorganic of heap of stone brilliant LED of the embodiment of the present invention shows module, has better performance unicity, and the size-spacing of LED controls more accurate, enhances the comfort level of human eye viewing.
The embodiment of the present invention two additionally provides the manufacture method that a kind of inorganic brilliant LED of heap of stone shows module, shows module in order to manufacture in above-described embodiment one the inorganic of heap of stone brilliant LED provided.As shown in Figure 4, described method comprises:
Step 410, crystals growth LED wafer of heap of stone in the lattice adaptation layer of the upper surface of LED inorganic circuit plate;
Concrete, the LED inorganic circuit plate described in the present embodiment, can pass through application number 2014101836010, and the manufacture method described in " a kind of manufacture method of the LED laminated circuit board based on inorganic matter " obtains; Or can pass through application number 2014101829040, the manufacture method described in " a kind of manufacture method of the composite LED laminated circuit board based on inorganic matter " obtains.
Step 420, graphical etching removes the SiO2 protective layer of LED inorganic circuit plate bottom, exposes contact electrode;
Step 430, is electrically connected dedicated IC chip with described LED wafer by described contact electrode;
Concrete, described electric connection mode includes but not limited to adopt AuSn alloy to weld, or, adopt anisotropy conductiving glue to glued joint.
Step 440, holds tin interface arrangement at the lower surface of described LED inorganic circuit plate;
Concrete, described interface arrangement can be USB terminal.
Step 450, in the lower surface spraying thermal paste of described LED inorganic circuit plate, attachment chip support, and heat-dissipating cover plate is installed;
Step 460, also mounts the diaphragm with optical grating structure at the exiting surface spraying transparent ceramic glaze of the LED wafer of the upper surface of described LED inorganic circuit plate;
Step 470, namely obtains described inorganic brilliant LED of heap of stone and shows module after baking and curing.
Optionally, in the lower surface spraying thermal paste of described LED inorganic circuit plate, attachment chip support, and before installing heat-dissipating cover plate, described method also comprises:
By described USB terminal input test signal, the described LED inorganic circuit plate being equipped with described dedicated IC chip and growth LED wafer is tested.
The inorganic of heap of stone brilliant LED that the embodiment of the present invention provides shows the manufacture method of module, preparation technology is simple, the inorganic of heap of stone brilliant LED prepared by application this method shows module, there is better performance unicity, and the size-spacing of LED controls more accurate, enhances the comfort level of human eye viewing.
Above-described embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only the specific embodiment of the present invention; the protection range be not intended to limit the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. inorganic brilliant LED of heap of stone shows a manufacture method for module, and it is characterized in that, described method comprises:
Crystals growth LED wafer of heap of stone in the lattice adaptation layer of the upper surface of LED inorganic circuit plate;
Graphical etching removes the SiO of LED inorganic circuit plate bottom
2protective layer, exposes contact electrode;
By described contact electrode, dedicated IC chip is electrically connected with described LED wafer;
Tin interface arrangement is held at the lower surface of described LED inorganic circuit plate;
In the lower surface spraying thermal paste of described LED inorganic circuit plate, attachment chip support, and heat-dissipating cover plate is installed;
The diaphragm with optical grating structure is also mounted at the exiting surface spraying transparent ceramic glaze of the LED wafer of the upper surface of described LED inorganic circuit plate;
Namely obtain described inorganic brilliant LED of heap of stone after baking and curing and show module.
2. method according to claim 1, is characterized in that, the mode of described electrical connection comprises employing AuSn alloy and welds, or, adopt anisotropy conductiving glue to glued joint.
3. method according to claim 1, is characterized in that, described interface arrangement comprises USB terminal; In the lower surface spraying thermal paste of described LED inorganic circuit plate, attachment chip support, and before installing heat-dissipating cover plate, described method also comprises:
By described USB terminal input test signal, the described LED inorganic circuit plate being equipped with described dedicated IC chip and growth LED wafer is tested.
4. the inorganic of heap of stone brilliant LED adopting the manufacture method described in the arbitrary claim of claim 1-3 to manufacture shows module, it is characterized in that, comprising: LED epitaxial growth inorganic circuit plate, chip support, interface arrangement, dedicated IC chip, heat dissipating layer and heat-dissipating cover plate;
Described LED epitaxial growth inorganic circuit plate top is exiting surface, there is the LED of directly crystals growth of heap of stone, described LED epitaxial growth inorganic circuit plate top is upwards arranged in described chip support, described dedicated IC chip upside-down mounting is arranged at the bottom surface of described base plate for packaging, is fixed in described chip support by described heat dissipating layer and described heat-dissipating cover plate; Described interface arrangement is arranged in the chip support between the bottom surface of described base plate for packaging and described heat-dissipating cover plate, and is exposed by the outward opening that described heat-dissipating cover plate has;
Described LED epitaxial growth inorganic circuit plate is electrically connected with described dedicated IC chip; Described base plate for packaging is electrically connected with external circuit by described interface arrangement.
5. inorganic brilliant LED of heap of stone according to claim 4 shows module, it is characterized in that, described inorganic brilliant LED of heap of stone shows module and also comprises:
Ceramic glaze layer, is arranged on the top exiting surface of described LED epitaxial growth inorganic circuit plate, for strengthening the heat dispersion of LED epitaxial growth inorganic circuit onboard led.
6. inorganic brilliant LED of heap of stone according to claim 4 shows module, it is characterized in that, described inorganic brilliant LED of heap of stone shows module and also comprises:
Diaphragm, has optical grating structure, is covered on described ceramic glaze layer.
7. inorganic brilliant LED of heap of stone according to claim 4 shows module, it is characterized in that, described inorganic brilliant LED of heap of stone shows module and also comprises:
Fixture, described heat-dissipating cover plate is anchored on described chip support by described fixture.
8. inorganic brilliant LED of heap of stone according to claim 4 shows module, and it is characterized in that, described interface arrangement is the USB interface of compatible power supply and data communication, is connected with described base plate for packaging by cementing or welding.
9. inorganic brilliant LED of heap of stone according to claim 4 shows module, and it is characterized in that, the LED that crystals growth is directly built at described LED epitaxial growth inorganic circuit plate top is monochromatic LED or multi-colored led.
10. inorganic brilliant LED of heap of stone according to claim 9 shows module, it is characterized in that, describedly multi-colored ledly to comprise: multiple red LED, multiple green LED and multiple blue led;
Wherein, a red LED, a green LED and a blue led form one group of wafer cell, and are equally spaced between the described wafer cell of many groups.
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| CN201410386512.6A CN105449089B (en) | 2014-08-07 | 2014-08-07 | A kind of inorganic epitaxy LED display module and its manufacturing method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120326120A1 (en) * | 2010-02-05 | 2012-12-27 | Wang-Kyun SHIN | Transparent led wafer module and method for manufacturing same |
| CN103366647A (en) * | 2013-07-09 | 2013-10-23 | 严敏 | LED display unit module |
| CN203492264U (en) * | 2013-09-03 | 2014-03-19 | 严敏 | Multilayer circuit board for LED display |
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2014
- 2014-08-07 CN CN201410386512.6A patent/CN105449089B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120326120A1 (en) * | 2010-02-05 | 2012-12-27 | Wang-Kyun SHIN | Transparent led wafer module and method for manufacturing same |
| CN103366647A (en) * | 2013-07-09 | 2013-10-23 | 严敏 | LED display unit module |
| CN203492264U (en) * | 2013-09-03 | 2014-03-19 | 严敏 | Multilayer circuit board for LED display |
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Effective date of registration: 20160804 Address after: 214100, Jiangsu, Wuxi Province, high road, Binhu District No. 999 (software R & D building) Applicant after: Wuxi Bridge Technology Co. Ltd. Address before: 100097 room B1F, unit four, building No. three, Far East Road, Haidian District, Beijing Applicant before: Yan Min Applicant before: Cheng Jun Applicant before: Zhou Mingbo |
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