CN105448822B - The method for removing substrate surface ITO - Google Patents
The method for removing substrate surface ITO Download PDFInfo
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- CN105448822B CN105448822B CN201510937453.1A CN201510937453A CN105448822B CN 105448822 B CN105448822 B CN 105448822B CN 201510937453 A CN201510937453 A CN 201510937453A CN 105448822 B CN105448822 B CN 105448822B
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- 239000000758 substrate Substances 0.000 title claims abstract description 106
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004140 cleaning Methods 0.000 claims abstract description 50
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000002253 acid Substances 0.000 claims abstract description 44
- 239000003513 alkali Substances 0.000 claims abstract description 34
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000005554 pickling Methods 0.000 claims abstract description 25
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 50
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 30
- 239000007921 spray Substances 0.000 claims description 28
- 238000005507 spraying Methods 0.000 claims description 9
- 230000005587 bubbling Effects 0.000 claims description 7
- 239000012530 fluid Substances 0.000 claims description 6
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 6
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 6
- 239000004094 surface-active agent Substances 0.000 claims description 5
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 claims description 4
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000000194 fatty acid Substances 0.000 claims description 4
- 229930195729 fatty acid Natural products 0.000 claims description 4
- 150000004665 fatty acids Chemical class 0.000 claims description 4
- 125000005456 glyceride group Chemical group 0.000 claims description 4
- -1 polyoxyethylene Polymers 0.000 claims description 4
- 229950008882 polysorbate Drugs 0.000 claims description 3
- 229920000136 polysorbate Polymers 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 2
- 230000003213 activating effect Effects 0.000 claims description 2
- 150000007942 carboxylates Chemical class 0.000 claims description 2
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 229920002401 polyacrylamide Polymers 0.000 claims description 2
- 239000002736 nonionic surfactant Substances 0.000 abstract description 6
- 229910021642 ultra pure water Inorganic materials 0.000 description 6
- 239000012498 ultrapure water Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000003518 caustics Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000007602 hot air drying Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000007605 air drying Methods 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to a kind of methods for removing substrate surface ITO.A kind of method for removing substrate surface ITO, comprises the following steps：By the substrate that there is ITO on surface be positioned in acid solution impregnate carry out pickling, the acid solution by weight percentage, including 20%~25% hydrochloric acid, 30%~35% acetic acid and 40%~50% water；And it is positioned over after the base-plate cleaning for having ITO through the surface of overpickling is removed the acid solution on surface in lye and carries out alkali cleaning and be removed the substrate of ITO, the lye by weight percentage, including 8%~10% alkali, 15%~20% nonionic surfactant and 70%~77% water.The method cost of above-mentioned removal substrate surface ITO is relatively low, safer and do not easily cause substrate breakage.
Description
Technical field
The present invention relates to a kind of methods for removing substrate surface ITO.
Background technology
Thin film transistor base plate has good clear electric conductivity, have that forbidden band is wide, visible light region light transmission is high and
The advantages such as resistivity is low, so as to be widely used in flat-panel display device, solar cell and other photoelectric devices.Film is brilliant
Body pipe substrate is made of to deposit indium oxide layer tin (ITO) layer the methods of substrate surface passes through magnetron sputtering.When ITO layer is not up to
To when requiring or flaw occur it is necessary to ITO layer is removed.
At present, generally all ITO layer is etched with chemical configuration chloroazotic acid method using the method for physical grinding.However, physics
Polishing removes thin film transistor (TFT) by grinding, be easy to cause that substrate thickness is partially thin to be not achieved client and specify requirement, simultaneous grinding
Shi Rongyi slivers, cause bigger to lose；When chemical chloroazotic acid etching method removes thin film transistor (TFT), substrate edges leakiness acid, while king
Water erosion is carved into sheet, safety is not easy management and control.
The content of the invention
Based on this, it is necessary to provide that a kind of cost is relatively low, removal substrate table safer and that do not easily cause substrate breakage
The method of face ITO.
A kind of method for removing substrate surface ITO, comprises the following steps：
By the substrate that there is ITO on surface be positioned in acid solution impregnate carry out pickling, the acid solution by weight percentage, including
20%~25% hydrochloric acid, 30%~35% acetic acid and 40%~50% water；And
It is positioned over after the base-plate cleaning for having ITO through the surface of overpickling is removed the acid solution on surface in lye and carries out alkali
Wash the substrate for the ITO that is removed, the lye by weight percentage, including 8%~10% alkali, 15%~20% it is non-from
Sub- surfactant and 70%~77% water.
In a wherein embodiment, the time of the pickling is 5 minutes~10 minutes.
In a wherein embodiment, in the operation of the pickling, bubbling processing is carried out in the acid solution.
In a wherein embodiment, the base-plate cleaning that the surface through overpickling is had ITO removes surface
Acid solution operation in, the substrate that there is ITO on the surface is positioned in the pure water of flowing and is cleaned 8 minutes~10 minutes.
In a wherein embodiment, the time of the alkali cleaning is 5 minutes~10 minutes.
In a wherein embodiment, the alkali is selected from least one of potassium hydroxide and sodium hydroxide.
In a wherein embodiment, the nonionic surfactant is selected from alkylphenol polyoxyethylene ether, polypropylene
At least one of amide, alkylphenol polyoxyethylene ether and polyoxyethylene carboxylate.
In a wherein embodiment, the nonionic surfactant is selected from neopelex, aliphatic acid
At least one of glyceride, fatty acid sorbitan and polysorbate.
In a wherein embodiment, step is further included：By 3 minutes~5 points of the water spray of substrate of the removing ITO
Clock.
In a wherein embodiment, step is further included：By 3 minutes~5 points of the water spray of substrate of the removing ITO
Zhong Hou carries out water cleaning, aqueous slkali cleaning, two fluid sprays, ultrapure water spray, high-pressure spraying by the removing ITO's successively
Substrate surface cleans up, afterwards drying process.
The method of above-mentioned removal substrate surface ITO, substrate surface is removed by way of carrying out pickling and alkali cleaning successively
ITO, acid solution include 20%~25% hydrochloric acid, 30%~35% acetic acid and 40%~50% water, acid solution and lye it is dense
It spends relatively low therefore at low cost and safe；ITO is removed by way of pickling and alkali cleaning cooperation, is not easy wounded substrate, it will not
Cause substrate breakage.
Specific embodiment
The method for removing substrate surface ITO is described in further detail mainly in combination with specific embodiment below.
The method of the removal substrate surface ITO of one embodiment, comprises the following steps：
Step S110, there is the substrate of ITO on cleaning surface to remove the spot on surface.
Generally, in thin film transistor (TFT) quality check process, when ITO layer does not reach requirement or flaw occurs, detection
Personnel can mark, and typically do oiliness mark with oiliness marking tool.
Preferably, the substrate for having ITO to surface using alcohol cleans, the oiliness mark and dust on surface of going out.Into
One step, the alcohol used is analysis pure (mass concentration 99.7%).
There is the substrate of ITO on cleaning surface can ensure the quick and accurate of subsequent operation to remove the spot on surface.
Certainly, when surface has the surface of the substrate of ITO clean and does not identify, which can be omitted.
Step S120, the substrate that there is ITO on surface is positioned over to impregnate in acid solution and carries out pickling.
Acid solution by weight percentage, including 20%~25% hydrochloric acid, 30%~35% acetic acid and 40%~50%
Water.
Preferably, the time of pickling is 5 minutes~10 minutes.
Preferably, in the operation of pickling, bubbling processing is carried out in the acid solution during pickling.Further preferably
, acid solution, which is placed in acid tank, carries out pickling, and acid tank is additionally arranged at the bottom bubbling pipe to improve the speed of pickling and uniformity.
Preferably, pickling carries out at normal temperatures.
The main component of ITO includes In2O3And SnO2.During pickling, hydrochloric acid and acetic acid provide hydrogen ion and In2O3Hair
Raw reaction：
It is positioned over step S130, the base-plate cleaning for having ITO through the surface of overpickling to be removed to the acid solution on surface after in lye
Alkali cleaning is carried out to be removed the substrate of ITO.
Lye by weight percentage, including 8%~10% alkali, 15%~20% nonionic surfactant and
70%~77% water.
Preferably, in the operation for the acid solution for the base-plate cleaning that there is ITO on the surface through overpickling being removed surface, by table
The substrate that there is ITO in face is positioned in the pure water of flowing and cleans 8 minutes~10 minutes.
Preferably, the time of alkali cleaning is 5 minutes~10 minutes.
Preferably, alkali is selected from least one of potassium hydroxide and sodium hydroxide.
Surfactant has fixed hydrophilic lipophilic group, can be aligned on the surface of solution, and can make surface
Power is remarkably decreased, and during alkali cleaning, nonionic surfactant is conducive to ITO and comes off from the surface of substrate.Preferably, it is non-
Ionic surface active agent is selected from alkylphenol polyoxyethylene ether, polyacrylamide, alkylphenol polyoxyethylene ether and aliphatic acid polyoxy second
At least one of enester.
Preferably, nonionic surfactant is selected from neopelex, fatty glyceride, fatty acid sorbitan
And at least one of polysorbate.
Preferably, the pH value of lye is 8-10.
The main component of ITO includes In2O3And SnO2.During alkali cleaning, potassium hydroxide provides hydroxyl and SnO2Occur
Reaction：
Step S140, the substrate of ITO water spray 3 minutes~5 minutes will be removed.
Step S150, the substrate for removing ITO is subjected to water cleaning, aqueous slkali cleaning, the spray of two fluid sprays, ultra-pure water successively
Leaching, high-pressure spraying clean up the substrate surface of the removing ITO, drying process afterwards.
Preferably, the time of water cleaning is 1 minute~2 minutes.
Preferably, the aqueous slkali that aqueous slkali cleaning uses is the KOH solution that mass concentration is 1.5%-2.5%.Lye is clear
The time washed is 1 minute~2 minutes.The pH value of aqueous slkali is 8-10.
Two fluid sprays, that is, BJ spray, refers to being sprayed using aeriferous water, it is preferred that two fluid sprays when
Between be 2 minutes~5 minutes.
Ultrapure water spray, that is, DI sprays, ultra-pure water refer to the water of resistivity >=8 megaohm, it is preferred that ultrapure water spray
Time is 1 minute~3 minutes.
Preferably, the time of high-pressure spraying is 1 minute~3 minutes.It is further preferred that the pressure of high-pressure spraying is 3KG/
cm2。
Preferably, drying process includes carrying out cold air drying and heated-air drying successively.
Preferably, water cleaning, aqueous slkali cleaning, two fluid sprays, ultrapure water spray, high-pressure spraying by cleaning machine into
Row, the ejected wash water box installed of cleaning machine have pH inductors to monitor the pH value of water and then monitor the pH-value of substrate.
The method of above-mentioned removal substrate surface ITO, substrate surface is removed by way of carrying out pickling and alkali cleaning successively
ITO, acid solution include 20%~25% hydrochloric acid, 30%~35% acetic acid and 40%~50% water, acid solution and lye it is dense
It spends relatively low therefore at low cost and safe；ITO is removed by way of pickling and alkali cleaning cooperation, is not easy wounded substrate, it will not
Cause substrate breakage.
It is described in detail below in conjunction with specific embodiment.
Embodiment 1
The method of the removal substrate surface ITO of embodiment 1 comprises the following steps：
(1) alcohol that concentration mass concentration is 99.7%, which wipes surface, has the substrate of ITO to remove the spot on surface,
Surface has in the substrate of ITO, and the material of substrate is TFT glass substrates, and the thickness of substrate is 0.4mm, and the thickness of ITO layer is
25nm。
(2) substrate that there is ITO on surface is positioned in acid tank to impregnate and carries out within 10 minutes pickling, the acid solution in acid tank is by weight
Including 20% hydrochloric acid, 30% acetic acid and 50% water, bubbling pipe is additionally arranged at the bottom to improve pickling in acid tank for percentages
Speed and uniformity.
(3) substrate that the surface through overpickling is had to ITO impregnates 10 minutes acid solutions for removing surface in the pure water of flowing,
The substrate for having ITO is positioned in alkali slot again to impregnate 10 minutes and carries out alkali cleaning, the lye in alkali slot by weight percentage, including
8% potassium hydroxide, 15% neopelex (Jiangsu Hai'an Petrochemical Plant) activating agent and 77% water, alkali
The pH value of liquid is 8.
(4) by the water spray 3 minutes of the substrate Jing Guo alkali cleaning, pure water cleaning is carried out successively to substrate using cleaning machine afterwards
2 minutes, caustic dip 3 minutes, BJ spray 2 minutes, DI spray 3 minutes, high-pressure spraying 3 minutes, most afterwards through cold wind and hot air drying
It is dry.Lye is the KOH solution that concentration is 1.5%.
Obtained substrate is observed, surface cleaning is without ITO；The sheet resistance of substrate, substrate table are tested by square resistance instrument
Surface resistance is infinity；PH inductors is used to test substrate surface pH value as 7.12 to monitor water.
Embodiment 2
The method of the removal substrate surface ITO of embodiment 2 comprises the following steps：
(1) alcohol that concentration mass concentration is 99.7%, which wipes surface, has the substrate of ITO to remove the spot on surface,
Surface has in the substrate of ITO, and the material of substrate is TFT glass substrates, and the thickness of substrate is 0.4mm, and the thickness of ITO layer is
25nm。
(2) substrate that there is ITO on surface is positioned in acid tank to impregnate and carries out within 10 minutes pickling, the acid solution in acid tank is by weight
Including 22% hydrochloric acid, 33% acetic acid and 45% water, bubbling pipe is additionally arranged at the bottom to improve pickling in acid tank for percentages
Speed and uniformity.
(3) substrate that the surface through overpickling is had to ITO impregnates 10 minutes acid solutions for removing surface in the pure water of flowing,
The substrate for having ITO is positioned in alkali slot again to impregnate 10 minutes and carries out alkali cleaning, the lye in alkali slot by weight percentage, including
9% potassium hydroxide, 18% fatty glyceride and 73% water, the pH value of lye is 9.
(4) by the water spray 3 minutes of the substrate Jing Guo alkali cleaning, pure water cleaning is carried out successively to substrate using cleaning machine afterwards
2 minutes, caustic dip 3 minutes, BJ spray 2 minutes, DI spray 3 minutes, high-pressure spraying 3 minutes, most afterwards through cold wind and hot air drying
It is dry.Lye is the KOH solution that concentration is 2%.
Obtained substrate is observed, surface cleaning is without ITO；The sheet resistance of substrate, substrate table are tested by square resistance instrument
Surface resistance is infinity；PH inductors is used to test substrate surface pH value as 7.16 to monitor water.
Embodiment 3
The method of the removal substrate surface ITO of embodiment 3 comprises the following steps：
(1) alcohol that concentration mass concentration is 99.7%, which wipes surface, has the substrate of ITO to remove the spot on surface,
Surface has in the substrate of ITO, and the material of substrate is TFT glass substrates, and the thickness of substrate is 0.4mm, and the thickness of ITO layer is
25nm。
(2) substrate that there is ITO on surface is positioned in acid tank to impregnate and carries out within 10 minutes pickling, the acid solution in acid tank is by weight
Including 25% hydrochloric acid, 35% acetic acid and 40% water, bubbling pipe is additionally arranged at the bottom to improve pickling in acid tank for percentages
Speed and uniformity.
(3) substrate that the surface through overpickling is had to ITO impregnates 10 minutes acid solutions for removing surface in the pure water of flowing,
The substrate for having ITO is positioned in alkali slot again to impregnate 10 minutes and carries out alkali cleaning, the lye in alkali slot by weight percentage, including
10% sodium hydroxide, 20% fatty acid sorbitan and 70% water, the pH value of lye is 10.
(4) by the water spray 3 minutes of the substrate Jing Guo alkali cleaning, pure water cleaning is carried out successively to substrate using cleaning machine afterwards
2 minutes, caustic dip 3 minutes, BJ spray 2 minutes, DI spray 3 minutes, high-pressure spraying 3 minutes, most afterwards through cold wind and hot air drying
It is dry.Lye is the KOH solution that concentration is 2.5%.
Obtained substrate is observed, surface cleaning is without ITO；The sheet resistance of substrate, substrate table are tested by square resistance instrument
Surface resistance is infinity；PH inductors is used to test substrate surface pH value as 7.18 to monitor water.
Embodiment described above only expresses the several embodiments of the present invention, and description is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that come for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. method for removing substrate surface ITO, which is characterized in that comprise the following steps：By the substrate that there is ITO on surface be positioned in acid solution impregnate carry out pickling, the acid solution by weight percentage, including 20% ~25% hydrochloric acid, 30%~35% acetic acid and 40%~50% water；AndProgress alkali cleaning in lye is positioned over after the base-plate cleaning for having ITO through the surface of overpickling is removed the acid solution on surface to obtain To remove ITO substrate, the lye by weight percentage, the nonionic table including 8%~10% alkali, 15%~20% Face activating agent and 70%~77% water.
- 2. the method for removal substrate surface ITO according to claim 1, which is characterized in that the time of the pickling is 5 points Clock~10 minute.
- 3. the method for removal substrate surface ITO according to claim 1, which is characterized in that in the operation of the pickling, Bubbling processing is carried out in the acid solution.
- 4. the method for removal substrate surface ITO according to claim 1, which is characterized in that described by the institute through overpickling In the operation for the acid solution that the base-plate cleaning that stating surface has ITO removes surface, the substrate that there is ITO on the surface is positioned over flowing It is cleaned 8 minutes~10 minutes in pure water.
- 5. the method for removal substrate surface ITO according to claim 1, which is characterized in that the time of the alkali cleaning is 5 points Clock~10 minute.
- 6. the method for removal substrate surface ITO according to claim 1, which is characterized in that the alkali is selected from potassium hydroxide And at least one of sodium hydroxide.
- 7. the method for removal substrate surface ITO according to claim 1, which is characterized in that the non-ionic surface active Agent in alkylphenol polyoxyethylene ether, polyacrylamide, alkylphenol polyoxyethylene ether and polyoxyethylene carboxylate at least It is a kind of.
- 8. the method for removal substrate surface ITO according to claim 1, which is characterized in that the non-ionic surface active Agent is selected from least one of neopelex, fatty glyceride, fatty acid sorbitan and polysorbate.
- 9. the method for removal substrate surface ITO according to claim 1, which is characterized in that it is described will be through overpickling The base-plate cleaning that there is ITO on the surface removes to be positioned in lye after the acid solution on surface and carries out alkali cleaning and be removed the substrate of ITO The step of after further include step：By the substrate water spray 3 minutes~5 minutes of the removing ITO.
- 10. the method for removal substrate surface ITO according to claim 9, which is characterized in that further include step：By described in The substrate of ITO water spray 3 minutes~after five minutes is removed, carries out water cleaning, aqueous slkali cleaning, two fluid sprays, ultrapure successively Water spray, high-pressure spraying clean up the substrate surface of the removing ITO, drying process afterwards.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510937453.1A CN105448822B (en) | 2015-12-15 | 2015-12-15 | The method for removing substrate surface ITO |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510937453.1A CN105448822B (en) | 2015-12-15 | 2015-12-15 | The method for removing substrate surface ITO |
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| CN105448822B true CN105448822B (en) | 2018-05-25 |
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| CN106356334B (en) * | 2016-10-27 | 2019-01-01 | 江西沃格光电股份有限公司 | The production technology of antistatic TFT substrate |
| CN112676362B (en) * | 2020-11-10 | 2022-12-20 | 常熟市电热合金材料厂有限公司 | Brightness treatment method for resistance wire |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420184A (en) * | 2002-11-07 | 2003-05-28 | 长沙矿冶研究院 | Method for extracting refined indium from indium tin oxide waste material |
| KR20040048662A (en) * | 2002-12-04 | 2004-06-10 | 주식회사 씨에스 이엔지 | Method for withdrawing indium from waste-ITO target by using nitric acid |
| CN1567071A (en) * | 2003-07-01 | 2005-01-19 | 友达光电股份有限公司 | Thin film transistor panel manufacturing method, etching bath cleaning method and use of alkali |
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2015
- 2015-12-15 CN CN201510937453.1A patent/CN105448822B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420184A (en) * | 2002-11-07 | 2003-05-28 | 长沙矿冶研究院 | Method for extracting refined indium from indium tin oxide waste material |
| KR20040048662A (en) * | 2002-12-04 | 2004-06-10 | 주식회사 씨에스 이엔지 | Method for withdrawing indium from waste-ITO target by using nitric acid |
| CN1567071A (en) * | 2003-07-01 | 2005-01-19 | 友达光电股份有限公司 | Thin film transistor panel manufacturing method, etching bath cleaning method and use of alkali |
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