CN105448822A - Method for removing ITO (tin indium oxide) on surface of base plate - Google Patents
Method for removing ITO (tin indium oxide) on surface of base plate Download PDFInfo
- Publication number
- CN105448822A CN105448822A CN201510937453.1A CN201510937453A CN105448822A CN 105448822 A CN105448822 A CN 105448822A CN 201510937453 A CN201510937453 A CN 201510937453A CN 105448822 A CN105448822 A CN 105448822A
- Authority
- CN
- China
- Prior art keywords
- ito
- minutes
- substrate
- alkali
- substrate surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L2021/775—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Abstract
The invention relates to a method for removing ITO on the surface of a base plate. The method of removing ITO on the surface of the base plate comprises the following steps: placing the base plate with the ITO on the surface in acid liquor, immersing, carrying out acid washing, wherein the acid liquor comprises, by weight, hydrochloric acid 20% -25 %, acetic acid 30% -35 % and water 40% -50%; washing the base plate with the ITO on the surface after acid washing, removing the acid liquor on the surface, then placing in alkali liquor, carrying out alkali washing, and obtaining the base plate without the ITO; wherein the alkali liquor comprises by weight, alkali 8% -10 %, nonionic surfactant 15% -20 % and water 70% -77%; the method for removing the ITO on the surface of the base plate is low in cost, is relatively safe and is not liable to cause the base plate to fracture.
Description
Technical field
The present invention relates to a kind of method removing substrate surface ITO.
Background technology
Thin film transistor base plate has good clear electric conductivity, has that forbidden band is wide, visible region light transmission is high and the advantage such as resistivity is low, thus is widely used in flat-panel display device, solar cell and other photoelectric devices.Thin film transistor base plate is made by method deposition indium oxide layer tin (ITO) layers such as magnetron sputterings at substrate surface.When ITO layer does not reach requirement or occurs flaw time, ITO layer will be removed.
At present, the method for physical grinding and chemical configuration chloroazotic acid method is generally all adopted ITO layer to be etched.But physical grinding method removes thin-film transistor by grinding, easily cause the partially thin client of not reaching of substrate thickness to specify requirement, easy sliver during simultaneous grinding, causes larger loss; When chemistry chloroazotic acid etching method removes thin-film transistor, the acid of substrate edges leakiness, the cost of chloroazotic acid etching simultaneously, safety not easily management and control.
Summary of the invention
Based on this, be necessary to provide a kind of cost lower, safer and not easily cause the method for the removal substrate surface ITO of substrate breakage.
Remove a method of substrate surface ITO, comprise the following steps:
Surface is had the substrate of ITO be positioned in acid solution soak carry out pickling, described acid solution by weight percentage, comprise the hydrochloric acid of 20% ~ 25%, the acetic acid of 30% ~ 35% and 40% ~ 50% water; And
Be positioned in alkali lye after removing the acid solution on surface by there being the base-plate cleaning of ITO through the described surface of overpickling and carry out alkali cleaning and to be removed the substrate of ITO, described alkali lye by weight percentage, comprise the alkali of 8% ~ 10%, the non-ionic surface active agent of 15% ~ 20% and 70% ~ 77% water.
Wherein in an execution mode, the time of described pickling is 5 minutes ~ 10 minutes.
Wherein in an execution mode, in the operation of described pickling, in described acid solution, carry out bubbling process.
Wherein in an execution mode, described have the described surface through overpickling in the operation of the acid solution on the base-plate cleaning removing surface of ITO, had on described surface the substrate of ITO to be positioned in the pure water of flowing and clean 8 minutes ~ 10 minutes.
Wherein in an execution mode, the time of described alkali cleaning is 5 minutes ~ 10 minutes.
Wherein in an execution mode, described alkali is selected from least one in potassium hydroxide and NaOH.
Wherein in an execution mode, described non-ionic surface active agent is selected from least one in APES, polyacrylamide, APES and polyoxyethylene carboxylate.
Wherein in an execution mode, described non-ionic surface active agent is selected from least one in the smooth and polysorbate of neopelex, fatty glyceride, aliphatic acid sorb.
Wherein in an execution mode, also comprise step: by the substrate Water spray 3 minutes ~ 5 minutes of described removing ITO.
Wherein in an execution mode, also comprise step: by the substrate Water spray of described removing ITO after 3 minutes ~ 5 minutes, carry out water cleaning successively, the substrate surface of described removing ITO cleans up by aqueous slkali cleaning, two fluid spray, ultra-pure water spray, high-pressure spraying, dry process afterwards.
The method of above-mentioned removal substrate surface ITO, substrate surface ITO is removed by the mode of carrying out pickling and alkali cleaning successively, acid solution comprise the hydrochloric acid of 20% ~ 25%, the acetic acid of 30% ~ 35% and 40% ~ 50% water, the concentration of acid solution and alkali lye is lower, and therefore cost is low and fail safe is high; The mode coordinated with alkali cleaning by pickling removes ITO, not easily wounded substrate, can not cause substrate breakage.
Embodiment
Mainly in conjunction with specific embodiments the method removing substrate surface ITO is described in further detail below.
The method of the removal substrate surface ITO of one execution mode, comprises the following steps:
Step S110, clean surface have the substrate of ITO to remove the spot on surface.
General, in thin-film transistor quality check process, when ITO layer does not reach requirement or occurs flaw time, testing staff can carry out mark, normally does oiliness mark with oiliness marking tool.
Preferably, use alcohol effects on surface to have the substrate of ITO to clean, surperficial oiliness of going out identifies and dust.Further, the alcohol of use is for analyzing pure (mass concentration is 99.7%).
Clean surface has the substrate of ITO can ensure the quick and accurate of subsequent operation with the spot removing surface.
Certainly, when there is the surface clean of the substrate of ITO on surface and does not identify, this step can be omitted.
Step S120, the substrate of ITO is had on surface to be positioned in acid solution to soak and to carry out pickling.
Acid solution by weight percentage, comprise the hydrochloric acid of 20% ~ 25%, the acetic acid of 30% ~ 35% and 40% ~ 50% water.
Preferably, the time of pickling is 5 minutes ~ 10 minutes.
Preferably, in the operation of pickling, in the process of pickling, in described acid solution, carry out bubbling process.Preferred further, acid solution is placed in acid tank carries out pickling, and the bottom of acid tank installs bubbling pipe additional to improve speed and the uniformity of pickling.
Preferably, pickling is carried out at normal temperatures.
The main component of ITO comprises In
2o
3and SnO
2.In the process of pickling, hydrochloric acid and acetic acid provide hydrogen ion and In
2o
3react:
Step S130, carry out alkali cleaning to be removed being positioned in alkali lye after having through the surface of overpickling the base-plate cleaning of ITO to remove the acid solution on surface the substrate of ITO.
Alkali lye by weight percentage, comprise the alkali of 8% ~ 10%, the non-ionic surface active agent of 15% ~ 20% and 70% ~ 77% water.
Preferably, the described surface through overpickling is had in the operation of the acid solution on the base-plate cleaning removing surface of ITO, had on surface the substrate of ITO to be positioned in the pure water of flowing and clean 8 minutes ~ 10 minutes.
Preferably, the time of alkali cleaning is 5 minutes ~ 10 minutes.
Preferably, alkali is selected from least one in potassium hydroxide and NaOH.
Surfactant has fixing hydrophilic and oleophilic group, aligns in the surface energy of solution, and surface tension can be made significantly to decline, and in the process of alkali cleaning, non-ionic surface active agent is conducive to ITO and comes off from the surface of substrate.Preferably, non-ionic surface active agent is selected from least one in APES, polyacrylamide, APES and polyoxyethylene carboxylate.
Preferably, non-ionic surface active agent is selected from least one in the smooth and polysorbate of neopelex, fatty glyceride, aliphatic acid sorb.
Preferably, the pH value of alkali lye is 8-10.
The main component of ITO comprises In
2o
3and SnO
2.In the process of alkali cleaning, potassium hydroxide provides hydroxyl and SnO
2react:
Step S140, by the substrate Water spray 3 minutes ~ 5 minutes of removing ITO.
Step S150, the substrate of removing ITO carried out successively water cleaning, the substrate surface of described removing ITO cleans up by aqueous slkali cleaning, two fluid spray, ultra-pure water spray, high-pressure spraying, dryly afterwards to process.
Preferably, the time of water cleaning is 1 minute ~ 2 minutes.
Preferably, the KOH solution that the aqueous slkali that aqueous slkali cleaning uses is 1.5%-2.5% for mass concentration.The time of caustic dip is 1 minute ~ 2 minutes.The pH value of aqueous slkali is 8-10.
Two fluid spray and BJ spray, refer to and adopt aeriferous water to spray, preferably, the time of two fluid spray is 2 minutes ~ 5 minutes.
Ultra-pure water spray and DI spray, ultra-pure water refers to the water of resistivity >=8 megaohm, and preferably, the time of ultra-pure water spray is 1 minute ~ 3 minutes.
Preferably, the time of high-pressure spraying is 1 minute ~ 3 minutes.Preferred further, the pressure of high-pressure spraying is 3KG/cm
2.
Preferably, drying processes to comprise and carries out cold air drying and heated-air drying successively.
Preferably, water cleaning, aqueous slkali cleaning, two fluid spray, ultra-pure water spray, high-pressure spraying are all undertaken by cleaning machine, and the cleaning water tank of cleaning machine is equipped with pH inductor with the pH-value of the pH value and then monitoring substrate of monitoring water.
The method of above-mentioned removal substrate surface ITO, substrate surface ITO is removed by the mode of carrying out pickling and alkali cleaning successively, acid solution comprise the hydrochloric acid of 20% ~ 25%, the acetic acid of 30% ~ 35% and 40% ~ 50% water, the concentration of acid solution and alkali lye is lower, and therefore cost is low and fail safe is high; The mode coordinated with alkali cleaning by pickling removes ITO, not easily wounded substrate, can not cause substrate breakage.
Be described in detail below in conjunction with specific embodiment.
Embodiment 1
The method of the removal substrate surface ITO of embodiment 1 comprises the following steps:
(1) working concentration mass concentration be 99.7% alcohol wipe surface have the substrate of ITO with remove surface spot, surface has in the substrate of ITO, and the material of substrate is TFT glass substrate, and the thickness of substrate is 0.4mm, and the thickness of ITO layer is 25nm.
(2) there is on surface the substrate of ITO to be positioned over immersion in acid tank and carry out pickling in 10 minutes, acid solution in acid tank by weight percentage, comprise the hydrochloric acid of 20%, the acetic acid of 30% and 50% water, the bottom in acid tank installs bubbling pipe additional to improve speed and the uniformity of pickling.
(3) there is on the surface through overpickling the substrate of ITO in the pure water of flowing, soak the acid solution on 10 minutes removing surfaces, within 10 minutes, alkali cleaning is carried out again by there being the substrate of ITO to be positioned in alkali groove to soak, alkali lye in alkali groove by weight percentage, comprise the potassium hydroxide of 8%, neopelex (Jiangsu Hai'an Petrochemical Plant) activating agent of 15% and the water of 77%, the pH value of alkali lye is 8.
(4) by the substrate Water spray 3 minutes through alkali cleaning, use afterwards cleaning machine to substrate carry out successively pure water clean 2 minutes, caustic dip 3 minutes, BJ sprays 2 minutes, DI sprays 3 minutes, high-pressure spraying 3 minutes, finally by cold wind and heated-air drying.Alkali lye to be concentration be 1.5% KOH solution.
Observable substrate, surface cleaning is without ITO; By the sheet resistance of square resistance instrument test base, substrate surface resistance is infinitely great; PH inductor is adopted to carry out test base surface pH value for 7.12 to monitor water.
Embodiment 2
The method of the removal substrate surface ITO of embodiment 2 comprises the following steps:
(1) working concentration mass concentration be 99.7% alcohol wipe surface have the substrate of ITO with remove surface spot, surface has in the substrate of ITO, and the material of substrate is TFT glass substrate, and the thickness of substrate is 0.4mm, and the thickness of ITO layer is 25nm.
(2) there is on surface the substrate of ITO to be positioned over immersion in acid tank and carry out pickling in 10 minutes, acid solution in acid tank by weight percentage, comprise the hydrochloric acid of 22%, the acetic acid of 33% and 45% water, the bottom in acid tank installs bubbling pipe additional to improve speed and the uniformity of pickling.
(3) there is on the surface through overpickling the substrate of ITO in the pure water of flowing, soak the acid solution on 10 minutes removing surfaces, within 10 minutes, alkali cleaning is carried out again by there being the substrate of ITO to be positioned in alkali groove to soak, alkali lye in alkali groove by weight percentage, comprise the potassium hydroxide of 9%, the fatty glyceride of 18% and 73% water, the pH value of alkali lye is 9.
(4) by the substrate Water spray 3 minutes through alkali cleaning, use afterwards cleaning machine to substrate carry out successively pure water clean 2 minutes, caustic dip 3 minutes, BJ sprays 2 minutes, DI sprays 3 minutes, high-pressure spraying 3 minutes, finally by cold wind and heated-air drying.Alkali lye to be concentration be 2% KOH solution.
Observable substrate, surface cleaning is without ITO; By the sheet resistance of square resistance instrument test base, substrate surface resistance is infinitely great; PH inductor is adopted to carry out test base surface pH value for 7.16 to monitor water.
Embodiment 3
The method of the removal substrate surface ITO of embodiment 3 comprises the following steps:
(1) working concentration mass concentration be 99.7% alcohol wipe surface have the substrate of ITO with remove surface spot, surface has in the substrate of ITO, and the material of substrate is TFT glass substrate, and the thickness of substrate is 0.4mm, and the thickness of ITO layer is 25nm.
(2) there is on surface the substrate of ITO to be positioned over immersion in acid tank and carry out pickling in 10 minutes, acid solution in acid tank by weight percentage, comprise the hydrochloric acid of 25%, the acetic acid of 35% and 40% water, the bottom in acid tank installs bubbling pipe additional to improve speed and the uniformity of pickling.
(3) there is on the surface through overpickling the substrate of ITO in the pure water of flowing, soak the acid solution on 10 minutes removing surfaces, within 10 minutes, alkali cleaning is carried out again by there being the substrate of ITO to be positioned in alkali groove to soak, alkali lye in alkali groove by weight percentage, comprise the NaOH of 10%, 20% aliphatic acid sorb smooth and 70% water, the pH value of alkali lye is 10.
(4) by the substrate Water spray 3 minutes through alkali cleaning, use afterwards cleaning machine to substrate carry out successively pure water clean 2 minutes, caustic dip 3 minutes, BJ sprays 2 minutes, DI sprays 3 minutes, high-pressure spraying 3 minutes, finally by cold wind and heated-air drying.Alkali lye to be concentration be 2.5% KOH solution.
Observable substrate, surface cleaning is without ITO; By the sheet resistance of square resistance instrument test base, substrate surface resistance is infinitely great; PH inductor is adopted to carry out test base surface pH value for 7.18 to monitor water.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but can not therefore be construed as limiting the scope of the patent.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. remove a method of substrate surface ITO, it is characterized in that, comprise the following steps:
Surface is had the substrate of ITO be positioned in acid solution soak carry out pickling, described acid solution by weight percentage, comprise the hydrochloric acid of 20% ~ 25%, the acetic acid of 30% ~ 35% and 40% ~ 50% water; And
Be positioned in alkali lye after removing the acid solution on surface by there being the base-plate cleaning of ITO through the described surface of overpickling and carry out alkali cleaning and to be removed the substrate of ITO, described alkali lye by weight percentage, comprise the alkali of 8% ~ 10%, the non-ionic surface active agent of 15% ~ 20% and 70% ~ 77% water.
2. the method for removal substrate surface ITO according to claim 1, is characterized in that, the time of described pickling is 5 minutes ~ 10 minutes.
3. the method for removal substrate surface ITO according to claim 1, is characterized in that, in the operation of described pickling, in described acid solution, carries out bubbling process.
4. the method for removal substrate surface ITO according to claim 1, it is characterized in that, described have the described surface through overpickling in the operation of the acid solution on the base-plate cleaning removing surface of ITO, had on described surface the substrate of ITO to be positioned in the pure water of flowing and clean 8 minutes ~ 10 minutes.
5. the method for removal substrate surface ITO according to claim 1, is characterized in that, the time of described alkali cleaning is 5 minutes ~ 10 minutes.
6. the method for removal substrate surface ITO according to claim 1, it is characterized in that, described alkali is selected from least one in potassium hydroxide and NaOH.
7. the method for removal substrate surface ITO according to claim 1, it is characterized in that, described non-ionic surface active agent is selected from least one in APES, polyacrylamide, APES and polyoxyethylene carboxylate.
8. the method for removal substrate surface ITO according to claim 1, is characterized in that, described non-ionic surface active agent is selected from least one in the smooth and polysorbate of neopelex, fatty glyceride, aliphatic acid sorb.
9. the method for removal substrate surface ITO according to claim 1, is characterized in that, also comprise step: by the substrate Water spray 3 minutes ~ 5 minutes of described removing ITO.
10. the method for removal substrate surface ITO according to claim 9, it is characterized in that, also comprise step: by the substrate Water spray of described removing ITO after 3 minutes ~ 5 minutes, carry out water cleaning successively, the substrate surface of described removing ITO cleans up by aqueous slkali cleaning, two fluid spray, ultra-pure water spray, high-pressure spraying, dry process afterwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510937453.1A CN105448822B (en) | 2015-12-15 | 2015-12-15 | The method for removing substrate surface ITO |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510937453.1A CN105448822B (en) | 2015-12-15 | 2015-12-15 | The method for removing substrate surface ITO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105448822A true CN105448822A (en) | 2016-03-30 |
| CN105448822B CN105448822B (en) | 2018-05-25 |
Family
ID=55558863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510937453.1A Active CN105448822B (en) | 2015-12-15 | 2015-12-15 | The method for removing substrate surface ITO |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105448822B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356334A (en) * | 2016-10-27 | 2017-01-25 | 江西沃格光电股份有限公司 | Process for producing antistatic TFT substrate |
| CN112676362A (en) * | 2020-11-10 | 2021-04-20 | 常熟市电热合金材料厂有限公司 | Brightness treatment method for resistance wire |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420184A (en) * | 2002-11-07 | 2003-05-28 | 长沙矿冶研究院 | Method for extracting refined indium from indium tin oxide waste material |
| KR20040048662A (en) * | 2002-12-04 | 2004-06-10 | 주식회사 씨에스 이엔지 | Method for withdrawing indium from waste-ITO target by using nitric acid |
| CN1567071A (en) * | 2003-07-01 | 2005-01-19 | 友达光电股份有限公司 | Thin film transistor panel manufacturing method, etching bath cleaning method and use of alkali |
-
2015
- 2015-12-15 CN CN201510937453.1A patent/CN105448822B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1420184A (en) * | 2002-11-07 | 2003-05-28 | 长沙矿冶研究院 | Method for extracting refined indium from indium tin oxide waste material |
| KR20040048662A (en) * | 2002-12-04 | 2004-06-10 | 주식회사 씨에스 이엔지 | Method for withdrawing indium from waste-ITO target by using nitric acid |
| CN1567071A (en) * | 2003-07-01 | 2005-01-19 | 友达光电股份有限公司 | Thin film transistor panel manufacturing method, etching bath cleaning method and use of alkali |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106356334A (en) * | 2016-10-27 | 2017-01-25 | 江西沃格光电股份有限公司 | Process for producing antistatic TFT substrate |
| CN106356334B (en) * | 2016-10-27 | 2019-01-01 | 江西沃格光电股份有限公司 | The production technology of antistatic TFT substrate |
| CN112676362A (en) * | 2020-11-10 | 2021-04-20 | 常熟市电热合金材料厂有限公司 | Brightness treatment method for resistance wire |
| CN112676362B (en) * | 2020-11-10 | 2022-12-20 | 常熟市电热合金材料厂有限公司 | Brightness treatment method for resistance wire |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105448822B (en) | 2018-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102151997B1 (en) | Method of etch cutting glass substrate | |
| CN102842652B (en) | The method of the making herbs into wool pickling of silicon chip | |
| CN102951845B (en) | A kind of one side engraving method of liquid crystal panel glass | |
| TWI589542B (en) | Glass substrate | |
| TW201500306A (en) | Methods for processing a thin flexible glass substrate with a glass carrier | |
| CN105002564A (en) | Environment-friendly sapphire film deplating solution and using method thereof | |
| CN107523881A (en) | A kind of preprocess method for preparing monocrystalline silicon suede | |
| CN105448822A (en) | Method for removing ITO (tin indium oxide) on surface of base plate | |
| CN104861980A (en) | Etching solution used in ITO/Ag/ITO multilayer film | |
| CN114318549A (en) | Monocrystalline silicon texturing additive for weak rough polishing process and use method | |
| CN103157619A (en) | Washing method for mask used in vapor deposition step in production of organic EL device and cleaning agent | |
| CN114192489A (en) | Cleaning method of LPCVD quartz boat | |
| CN103242985B (en) | Cleaning agent for antireflective coating of organic light-emitting micro-display and cleaning process | |
| US20170233650A1 (en) | Etch cutting solution for use on glass substrates | |
| CN101976705A (en) | Single-side acid-etching technology of crystalline silicon solar batteries | |
| CN109427930A (en) | A method of flannelette is selectively prepared on crystal silicon chip surface | |
| CN109461791B (en) | Texturing method of monocrystalline silicon wafer | |
| KR102254561B1 (en) | Etchant composition for silver nanowires | |
| CN110610852A (en) | Method for removing residual glue on metal surface | |
| CN107282525B (en) | Cleaning process suitable for ceramic product | |
| CN108169939A (en) | Liquid crystal display substrate cleaning method, the method for forming oriented layer | |
| CN103524054B (en) | What take off film and use this to take off the ito glass of film takes off membrane method | |
| CN103721969A (en) | Method for washing optical substrate before film coating | |
| CN105489705A (en) | Etching and cleaning process for manufacturing crystalline silicon solar cell | |
| CN108525970A (en) | The preparation method of noble metal super-double-hydrophobic surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |